Frequency stability of 3D encapsulated VHF MEMS resonators with Q-factor of 10000 are systematically studied. A negating capacitive compensation technique was developed to eliminating the parasitic effect caused by the PCB circuits. The long-term frequency stability results of the resonance frequency variation and the noise floor of Allan Deviation were $pm 1$ ppm and 26 ppb, respectively, which were comparable to these of the typical quartz resonator. The thermal cycling test between −40 °C and 85 °C for both the long-term operation and the temperature cycling were measured and the results show that the resonant frequency drifts were less than $pm$ 1.5 ppm, indicating the high frequency stability of the encapsulated disk resonator.
{"title":"Frequency Stability of 3D Encapsulated VHF MEMS Resonator","authors":"Fengxiang Wang, Q. Yuan, X. Kan, Zeji Chen, Jinling Yang, Fuhua Yang","doi":"10.1109/FCS.2018.8597510","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597510","url":null,"abstract":"Frequency stability of 3D encapsulated VHF MEMS resonators with Q-factor of 10000 are systematically studied. A negating capacitive compensation technique was developed to eliminating the parasitic effect caused by the PCB circuits. The long-term frequency stability results of the resonance frequency variation and the noise floor of Allan Deviation were $pm 1$ ppm and 26 ppb, respectively, which were comparable to these of the typical quartz resonator. The thermal cycling test between −40 °C and 85 °C for both the long-term operation and the temperature cycling were measured and the results show that the resonant frequency drifts were less than $pm$ 1.5 ppm, indicating the high frequency stability of the encapsulated disk resonator.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127665574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597441
Siddhartha Ghosh, J. Cafarella
This paper describes the use of Lithium Niobate and GaN on sapphire substrates to define SAW correlators for direct sequence spread spectrum modulation. Passive correlators with maximal length sequence periods of 7 and 15 are fabricated and tested on 128° Y-cut bulk Lithium Niobate. The input transducer is modulated at carrier frequencies of 470-930 MHz with a chip duration of 100 n $s$. At the output, a maximum peak-to-sidelobe ratio of 15 dB is measured. The same design is then fabricated in GaN on sapphire in order to incorporate acoustoelectric gain sections using an AlGaN barrier engineered to ensure low sheet density. We consider a basic cell consisting of a tap followed by a gain section to support long correlator structures. This represents a first step towards mitigating acoustic propagation losses in monolithic GaN SAW correlators.
本文描述了在蓝宝石衬底上使用铌酸锂和氮化镓来定义直接序列扩频调制的SAW相关器。制作了最大长度序列周期为7和15的无源相关器，并在128°y形切割的大块铌酸锂上进行了测试。输入换能器在470-930 MHz的载波频率上调制，芯片持续时间为100 n / s。在输出端，测得最大峰旁瓣比为15db。然后在蓝宝石上用GaN制造相同的设计，以便使用设计以确保低片密度的AlGaN势垒结合声电增益部分。我们考虑一个基本单元由抽头和增益部分组成，以支持长相关器结构。这代表了减轻单片GaN SAW相关器中声学传播损失的第一步。
{"title":"SAW Correlators in LiNbO3 and GaN on Sapphire","authors":"Siddhartha Ghosh, J. Cafarella","doi":"10.1109/FCS.2018.8597441","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597441","url":null,"abstract":"This paper describes the use of Lithium Niobate and GaN on sapphire substrates to define SAW correlators for direct sequence spread spectrum modulation. Passive correlators with maximal length sequence periods of 7 and 15 are fabricated and tested on 128° Y-cut bulk Lithium Niobate. The input transducer is modulated at carrier frequencies of 470-930 MHz with a chip duration of 100 n $s$. At the output, a maximum peak-to-sidelobe ratio of 15 dB is measured. The same design is then fabricated in GaN on sapphire in order to incorporate acoustoelectric gain sections using an AlGaN barrier engineered to ensure low sheet density. We consider a basic cell consisting of a tap followed by a gain section to support long correlator structures. This represents a first step towards mitigating acoustic propagation losses in monolithic GaN SAW correlators.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"405 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133536074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597474
Ahmad El-Hemeily, S. Ibrahim, M. Atef, Ali Fawzy, Mostafa Essawy, Eslam Helal, E. Saad, Ayman Ahmed, Eloi MarigoFerrer, M. Soundarapandian, Arjun KumarKantimahanti
The design and measurement of a monolithic low-jitter thin-film surface-acoustic-wave (TFSAW) based oscillator employing an integrated micro-electromechanical systems (MEMS) SAW resonator developed on top of a standard $0.13-mu mathrm{m}$ CMOS technology [1] are presented. All oscillator circuitry is placed under the SAW resonator for efficient area utilization enabling a compact low-cost highly-integrated solution. The oscillator has an oscillation frequency of 323 MHz and power dissipation of 10.5 mW. Measured phase noise performance of the oscillator is −121 dBc/Hz at 10-kHz offset frequency and measured noise floor is a −146 dBc/Hz. The integrated phase jitter from 12 kHz to 20 MHz is less than 160 fs. For a lower power consumption of 5 mW, the phase noise performance is −118 dBc/Hz at 10-kHz offset frequency, −142 dBc/Hz noise floor, and the integrated phase jitter is 212 fs. This performance allows the development of highperformance low-jitter highly-integrated low-cost clocking solutions based on MEMS SAW oscillators replacing traditional quartz crystal and SAW-based discrete solutions.
{"title":"A Low Jitter Monolithic MEMS Thin Film SAW Oscillator in $0.13 mu mathrm{m}$ CMOS","authors":"Ahmad El-Hemeily, S. Ibrahim, M. Atef, Ali Fawzy, Mostafa Essawy, Eslam Helal, E. Saad, Ayman Ahmed, Eloi MarigoFerrer, M. Soundarapandian, Arjun KumarKantimahanti","doi":"10.1109/FCS.2018.8597474","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597474","url":null,"abstract":"The design and measurement of a monolithic low-jitter thin-film surface-acoustic-wave (TFSAW) based oscillator employing an integrated micro-electromechanical systems (MEMS) SAW resonator developed on top of a standard $0.13-mu mathrm{m}$ CMOS technology [1] are presented. All oscillator circuitry is placed under the SAW resonator for efficient area utilization enabling a compact low-cost highly-integrated solution. The oscillator has an oscillation frequency of 323 MHz and power dissipation of 10.5 mW. Measured phase noise performance of the oscillator is −121 dBc/Hz at 10-kHz offset frequency and measured noise floor is a −146 dBc/Hz. The integrated phase jitter from 12 kHz to 20 MHz is less than 160 fs. For a lower power consumption of 5 mW, the phase noise performance is −118 dBc/Hz at 10-kHz offset frequency, −142 dBc/Hz noise floor, and the integrated phase jitter is 212 fs. This performance allows the development of highperformance low-jitter highly-integrated low-cost clocking solutions based on MEMS SAW oscillators replacing traditional quartz crystal and SAW-based discrete solutions.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134618349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597488
A. Hudson, J. Camparo
In the Rb atomic frequency standard (RAFS), the 2ndharmonic signal, S2, is routinely taken as a “Status-of-Health” indicator for the atomic signal. In part, this role for S2derives from the Quasi-Static Approximation (QSA), where harmonic signals are taken as proportional to derivatives of the static lineshape. However, clock operating conditions violate the assumptions of the QSA, and so justification of the relationship between S2 and $text{dS}_{1}/mathrm{d}Deltavert_{Delta=0}$ (i.e., the correction signal's slope on resonance) is questionable. To better understand S2 and its potential as a status-of-health indicator, we are continuing a series of experiments begun in our laboratory. Here, we discuss the role of temperature gradients on S2, and the extent to which temperature gradients might or might not influence S2's ability to monitor clock health.
{"title":"The 2nd-Harmonic Signal in the Rb Atomic Clock for “Status-of-Health” Monitoring","authors":"A. Hudson, J. Camparo","doi":"10.1109/FCS.2018.8597488","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597488","url":null,"abstract":"In the Rb atomic frequency standard (RAFS), the 2<sup>nd</sup>harmonic signal, S2, is routinely taken as a “Status-of-Health” indicator for the atomic signal. In part, this role for S<inf>2</inf>derives from the Quasi-Static Approximation (QSA), where harmonic signals are taken as proportional to derivatives of the static lineshape. However, clock operating conditions violate the assumptions of the QSA, and so justification of the relationship between S<inf>2</inf> and <tex>$text{dS}_{1}/mathrm{d}Deltavert_{Delta=0}$</tex> (i.e., the correction signal's slope on resonance) is questionable. To better understand S<inf>2</inf> and its potential as a status-of-health indicator, we are continuing a series of experiments begun in our laboratory. Here, we discuss the role of temperature gradients on S<inf>2</inf>, and the extent to which temperature gradients might or might not influence S<inf>2</inf>'s ability to monitor clock health.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133035778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597583
Dipen Barot, L. Duan
Electronic frequency divider (EFD) is a common two port electronic component that is widely used in electronics and photonics. In this presentation, we discuss how an EFD responds to an angle-modulated signal in general and demonstrate, both theoretically and experimentally, that different modulation scenarios lead to different EFD output characteristics. In practice, such effects can help differentiate certain types of phase and frequency modulations, which is often difficult to accomplish with direct measurement of power spectral density (PSD). In addition, we show EFD-aided PSD measurement allows for quantitative assessment of wideband frequency-modulation parameters, such as modulation frequency, modulation index and frequency deviation, which is not possible with any conventional spectral analysis methods. The enhanced spectral specificity may benefit the field of frequency control by helping system designers more effectively identify potential fluctuation sources and their scales. The technique may also find applications in modulation recognition, radar technologies, laser frequency metrology, microwave photonics, etc.
{"title":"Effects of Electronic Frequency Dividers on Angle-Modulated Signals and Their Potential Applications in Frequency Analysis","authors":"Dipen Barot, L. Duan","doi":"10.1109/FCS.2018.8597583","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597583","url":null,"abstract":"Electronic frequency divider (EFD) is a common two port electronic component that is widely used in electronics and photonics. In this presentation, we discuss how an EFD responds to an angle-modulated signal in general and demonstrate, both theoretically and experimentally, that different modulation scenarios lead to different EFD output characteristics. In practice, such effects can help differentiate certain types of phase and frequency modulations, which is often difficult to accomplish with direct measurement of power spectral density (PSD). In addition, we show EFD-aided PSD measurement allows for quantitative assessment of wideband frequency-modulation parameters, such as modulation frequency, modulation index and frequency deviation, which is not possible with any conventional spectral analysis methods. The enhanced spectral specificity may benefit the field of frequency control by helping system designers more effectively identify potential fluctuation sources and their scales. The technique may also find applications in modulation recognition, radar technologies, laser frequency metrology, microwave photonics, etc.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125518104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597484
H. Homulle, E. Charbon
Electronics, from basic sub-micron MOSFETS to large-scale FPGAs, has been shown to operate at deep-cryogenic temperatures. Any digital system relies on an accurate clock for operation. While a clock signal can be provided from room temperature into the cryogenic environment, a clock generated at low temperatures features both smaller system size and tighter integration with the remainder of the electronics. While custom integrated cryogenic oscillator architectures have been proposed, mainly for the generation of radio-frequency signals, no commercial devices have been shown to operate at temperatures as low as 4 K. In this work, we focus on cryogenic frequency generation with commercially available oscillators. Eight commercial crystal and MEMS oscillators, generating 50 or 100 MHz signals, were tested over a wide temperature range from 300 K down to 4 K. Although MEMS devices suffered from apparent ageing effects after several cooling cycles, the majority of crystal oscillators were fully functional even at such low temperatures. The oscillation frequency of crystal-based devices decreased by roughly 0.1%, while power consumption and signal amplitude were slightly higher at cryogenic temperatures. The phase noise and corresponding phase jitter were elevated mainly due to increased flicker noise; the best device shows a phase jitter increase from 350 fs at 300 K to 620 fs at 4 K.
{"title":"Commercial Crystal and MEMS Oscillators Characterized at Deep-Cryogenic Temperatures","authors":"H. Homulle, E. Charbon","doi":"10.1109/FCS.2018.8597484","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597484","url":null,"abstract":"Electronics, from basic sub-micron MOSFETS to large-scale FPGAs, has been shown to operate at deep-cryogenic temperatures. Any digital system relies on an accurate clock for operation. While a clock signal can be provided from room temperature into the cryogenic environment, a clock generated at low temperatures features both smaller system size and tighter integration with the remainder of the electronics. While custom integrated cryogenic oscillator architectures have been proposed, mainly for the generation of radio-frequency signals, no commercial devices have been shown to operate at temperatures as low as 4 K. In this work, we focus on cryogenic frequency generation with commercially available oscillators. Eight commercial crystal and MEMS oscillators, generating 50 or 100 MHz signals, were tested over a wide temperature range from 300 K down to 4 K. Although MEMS devices suffered from apparent ageing effects after several cooling cycles, the majority of crystal oscillators were fully functional even at such low temperatures. The oscillation frequency of crystal-based devices decreased by roughly 0.1%, while power consumption and signal amplitude were slightly higher at cryogenic temperatures. The phase noise and corresponding phase jitter were elevated mainly due to increased flicker noise; the best device shows a phase jitter increase from 350 fs at 300 K to 620 fs at 4 K.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132120076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597482
M. Aleynikov, A. Boyko, I. Blinov, S. Donchenko
One of the main problem of achieving a quantum noise limited frequency stability in atomic clocks operating in cycle mode, e.g. fountain or pulsed optically pumped (POP) atomic clock, is a phase noise of interrogation signal probing the atom transition. In the present work a solution of the problem via application of a special hydrogen maser with increased power radiated by atomic beam or a low phase noise H-maser as a reference in synthesis scheme of the interrogation signal is described. This solution caused by simplicity because it requires neither cryogenic microwave oscillators nor complicated optical systems techniques.
{"title":"Using a Low Phase Noise H-Maser as a Local Oscillator for an Rb Fountain Discriminator","authors":"M. Aleynikov, A. Boyko, I. Blinov, S. Donchenko","doi":"10.1109/FCS.2018.8597482","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597482","url":null,"abstract":"One of the main problem of achieving a quantum noise limited frequency stability in atomic clocks operating in cycle mode, e.g. fountain or pulsed optically pumped (POP) atomic clock, is a phase noise of interrogation signal probing the atom transition. In the present work a solution of the problem via application of a special hydrogen maser with increased power radiated by atomic beam or a low phase noise H-maser as a reference in synthesis scheme of the interrogation signal is described. This solution caused by simplicity because it requires neither cryogenic microwave oscillators nor complicated optical systems techniques.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133752141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597529
V. Qaradaghi, A. Ramezany, M. Mahdavi, S. Pourkamali
This paper reports on fabrication of nano mechanical disk resonators on micro-thick membranes and characterization of their resonance frequency shift due to air-pressure induced membrane deflection. Finite element analysis (FEM) has been used to show the estimate deflection at the center of the membrane. For the $20mu mathbf{m}$ thick, 2mm diameter membrane in this work, 1mPa of pressure change corresponds to 2pm of deflection (shear stress of 12Pa at the center of the membrane). Measurements show highest resonator sensitivity of 0.5Hz per pico-meter of deflection at the membrane center. In addition, it is shown that as the dimension of disks decreases from $20mu mathbf{m}$ to $5mu mathbf{m}$, the resonator sensitivity increases by about 8 times.
{"title":"Nanomechanical Disk Resonator-on-Membrane with Pico-Meter Deflection Resolution","authors":"V. Qaradaghi, A. Ramezany, M. Mahdavi, S. Pourkamali","doi":"10.1109/FCS.2018.8597529","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597529","url":null,"abstract":"This paper reports on fabrication of nano mechanical disk resonators on micro-thick membranes and characterization of their resonance frequency shift due to air-pressure induced membrane deflection. Finite element analysis (FEM) has been used to show the estimate deflection at the center of the membrane. For the $20mu mathbf{m}$ thick, 2mm diameter membrane in this work, 1mPa of pressure change corresponds to 2pm of deflection (shear stress of 12Pa at the center of the membrane). Measurements show highest resonator sensitivity of 0.5Hz per pico-meter of deflection at the membrane center. In addition, it is shown that as the dimension of disks decreases from $20mu mathbf{m}$ to $5mu mathbf{m}$, the resonator sensitivity increases by about 8 times.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123492805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597584
M. Mahdavi, Honglei Wang, Amin Abbasalipour, Walter Hu, S. Pourkamali
This work presents Micro-Resonator-on-Membrane (MRoM) as an effective approach to harness high mass sensitivity of MEMS resonators for real-time label-free biosensing. MRoMs are formed on SOI substrates and are comprised of a Thin-film Piezoelectric-on-Si (TPoS) micro-resonator separated by a thin oxide membrane from the backside cavity in which biological solutions are hosted. The isolating membrane reduces the liquid-resonator interaction and minimizes viscous losses to maintain relatively high resonator quality factor $(Q)$ in contact with liquid. The membrane also insulates the resonator electrical connections from the conductive biological solution eliminating undesirable interferences. In order to minimize the added anchor loss from the membrane connecting the resonator to the substrate, in-plane acoustic reflectors are carved into the device layer around the resonator. Membrane surface modification with antibody and detection of target analyte has been successfully demonstrated for MRoMs. Frequency shift of 90 kHz (805 ppm) has been measured for a 111 MHz 3rd length extensional (LE) mode of an MRoM due to adsorption of anti-mouse-IgG molecules tagged with 10 nm diameter gold nanoparticles with surface density of 1011/cm2. This translates to measured mass sensitivity of −88.9 Hz.cm2/ng
{"title":"Micro-Resonator-on-Membrane for Real-Time Biosensing","authors":"M. Mahdavi, Honglei Wang, Amin Abbasalipour, Walter Hu, S. Pourkamali","doi":"10.1109/FCS.2018.8597584","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597584","url":null,"abstract":"This work presents Micro-Resonator-on-Membrane (MRoM) as an effective approach to harness high mass sensitivity of MEMS resonators for real-time label-free biosensing. MRoMs are formed on SOI substrates and are comprised of a Thin-film Piezoelectric-on-Si (TPoS) micro-resonator separated by a thin oxide membrane from the backside cavity in which biological solutions are hosted. The isolating membrane reduces the liquid-resonator interaction and minimizes viscous losses to maintain relatively high resonator quality factor $(Q)$ in contact with liquid. The membrane also insulates the resonator electrical connections from the conductive biological solution eliminating undesirable interferences. In order to minimize the added anchor loss from the membrane connecting the resonator to the substrate, in-plane acoustic reflectors are carved into the device layer around the resonator. Membrane surface modification with antibody and detection of target analyte has been successfully demonstrated for MRoMs. Frequency shift of 90 kHz (805 ppm) has been measured for a 111 MHz 3rd length extensional (LE) mode of an MRoM due to adsorption of anti-mouse-IgG molecules tagged with 10 nm diameter gold nanoparticles with surface density of 1011/cm2. This translates to measured mass sensitivity of −88.9 Hz.cm2/ng","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128245189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-05-01DOI: 10.1109/FCS.2018.8597543
S. Beattie, B. Jian, A. JohnAlcock, M. Gertsvolf, R. Hendricks, K. Szymaniec, K. Gibble
At the National Research Council Canada we are currently performing the first accuracy evaluation of our newly developed caesium fountain clock, NRC-FCs2. This primary frequency standard operates with a short term stability of $sigma_{mathbf{y}}(tau)=1.1 mathbf{x} 10^{-13}tau^{-1/2}$ and, upon full evaluation, we expect to achieve a type B uncertainty in fractional frequency below $5 mathbf{x} 10^{-16}$. We will discuss the current status of the evaluation, including several evaluated shifts, as well as the outstanding systematics yet to be fully characterized.
{"title":"Preliminary Evaluation of NRC-FCs2 Fountain Clock at the National Research Council Canada","authors":"S. Beattie, B. Jian, A. JohnAlcock, M. Gertsvolf, R. Hendricks, K. Szymaniec, K. Gibble","doi":"10.1109/FCS.2018.8597543","DOIUrl":"https://doi.org/10.1109/FCS.2018.8597543","url":null,"abstract":"At the National Research Council Canada we are currently performing the first accuracy evaluation of our newly developed caesium fountain clock, NRC-FCs2. This primary frequency standard operates with a short term stability of $sigma_{mathbf{y}}(tau)=1.1 mathbf{x} 10^{-13}tau^{-1/2}$ and, upon full evaluation, we expect to achieve a type B uncertainty in fractional frequency below $5 mathbf{x} 10^{-16}$. We will discuss the current status of the evaluation, including several evaluated shifts, as well as the outstanding systematics yet to be fully characterized.","PeriodicalId":180164,"journal":{"name":"2018 IEEE International Frequency Control Symposium (IFCS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124873443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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