Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189814
J. Fossum, M. A. Shibib
A physical, analytic model for heavily doped polysilicon contacts to silicon bipolar devices is developed. The model defines an effective surface recombination velocity Sefffor minority carriers at the polysilicon-silicon interface in terms of the physical properties of the polysilicon. It thus allows the carrier transport problem in the adjacent silicon region, e.g., the emitter, to be solved and the efficacy of the device, e.g., a transistor or a solar cell, to be characterized, and hence can be an effective design aid. The model is shown to compare well with published experimental data indicating the benefits of polysilicon contacts to bipolar transistors. Such benefits, which result because of the relatively low values of Seff, might also occur when polysilicon contacts are used on silicon solar cells.
{"title":"A minority-carrier transport model for polysilicon contacts to silicon bipolar devices, including solar cells","authors":"J. Fossum, M. A. Shibib","doi":"10.1109/IEDM.1980.189814","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189814","url":null,"abstract":"A physical, analytic model for heavily doped polysilicon contacts to silicon bipolar devices is developed. The model defines an effective surface recombination velocity Sefffor minority carriers at the polysilicon-silicon interface in terms of the physical properties of the polysilicon. It thus allows the carrier transport problem in the adjacent silicon region, e.g., the emitter, to be solved and the efficacy of the device, e.g., a transistor or a solar cell, to be characterized, and hence can be an effective design aid. The model is shown to compare well with published experimental data indicating the benefits of polysilicon contacts to bipolar transistors. Such benefits, which result because of the relatively low values of Seff, might also occur when polysilicon contacts are used on silicon solar cells.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124485067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189976
D. Yaney, T. Fogarty, R. Porter, D. Fraser, S. Murarka
Long polysilicon runners used for gates and interconnections in large devices limit performance due to RC delays encountered in propagating signals. As devices are scaled down for VLSI, thinner gates and field oxides as well as narrower runner widths tend to accentuate this problem. An order of magnitude decrease in sheet resistance with the corresponding improvement in RC delay is possible through the use of refractory metal silicides for these levels. In this work we describe the fabrication of a fully functional 64K NMOS dynamic RAM where TaSi2was substituted for polysilicon on the second poly level. We discuss the co-sputtering of the silicide on a poly "buffer" layer, annealing and subsequent plasma pattern definition. Final sheet resistance of the silicide level was under 3 ohms per square. In a related study, we have examined device I-V and MOS C-V characteristics and find no degradation due to these process changes. Together with the results of the physical fabrication, this work demonstrates the feasibility of this technology for extensive present and future application.
{"title":"Fabrication of a 64K dynamic MOS RAM with tantalum silicide replacing polysilicon","authors":"D. Yaney, T. Fogarty, R. Porter, D. Fraser, S. Murarka","doi":"10.1109/IEDM.1980.189976","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189976","url":null,"abstract":"Long polysilicon runners used for gates and interconnections in large devices limit performance due to RC delays encountered in propagating signals. As devices are scaled down for VLSI, thinner gates and field oxides as well as narrower runner widths tend to accentuate this problem. An order of magnitude decrease in sheet resistance with the corresponding improvement in RC delay is possible through the use of refractory metal silicides for these levels. In this work we describe the fabrication of a fully functional 64K NMOS dynamic RAM where TaSi2was substituted for polysilicon on the second poly level. We discuss the co-sputtering of the silicide on a poly \"buffer\" layer, annealing and subsequent plasma pattern definition. Final sheet resistance of the silicide level was under 3 ohms per square. In a related study, we have examined device I-V and MOS C-V characteristics and find no degradation due to these process changes. Together with the results of the physical fabrication, this work demonstrates the feasibility of this technology for extensive present and future application.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124774873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189892
H. Lam
Recent work in laser recrystallization of deposited polysilicon on a 1 µm thick oxide layer grown on a silicon wafer has enhanced the hope of achieving a silicon-on-insulator (SOI) material system that is far superior than that of silicon-on-sapphire (SOS) and is suitable for VLSI application. Surface mobility measured in devices fabricated in the laser-recrystallized SOI material approaches that fabricated in bulk silicon. The bottom silicon and silicon dioxide interface had been shown to be device-worthy. Being a technology based on silicon, low cost and high yield can be expected. This paper summarizes the development of the laser-recrystallized SOI technology to date and what it takes to make this technology commercially viable.
{"title":"Laser-recrystallized silicon-on-oxide—The ideal silicon-on-insulator structure for VLSI?","authors":"H. Lam","doi":"10.1109/IEDM.1980.189892","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189892","url":null,"abstract":"Recent work in laser recrystallization of deposited polysilicon on a 1 µm thick oxide layer grown on a silicon wafer has enhanced the hope of achieving a silicon-on-insulator (SOI) material system that is far superior than that of silicon-on-sapphire (SOS) and is suitable for VLSI application. Surface mobility measured in devices fabricated in the laser-recrystallized SOI material approaches that fabricated in bulk silicon. The bottom silicon and silicon dioxide interface had been shown to be device-worthy. Being a technology based on silicon, low cost and high yield can be expected. This paper summarizes the development of the laser-recrystallized SOI technology to date and what it takes to make this technology commercially viable.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128192375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189923
L. Tomasetta
Recent improvements in fiber optic semiconductor components (i.e. lasers and detectors) will lead to the rapid deployment of fiber optic systems in the next few years. This does not, however, signal the end of research in semiconductor optoelectronics, but rather the opening of new and ultimately more widespread application of optoelectronic devices. New and powerful signal processing and data transmission functions will become possible by the marriage of optical and electronic functions on a single monolithic wafer. Applications will range from simple single channel integrated repeaters to repeaters with error correcting electronics and switching capabilities to complex distributed computer data bus networks capable of interconnecting dozens of the computers of the 1990's with a circulating data stream operating in excess of 100 Gigabits/sec.
{"title":"The evolution from components to integrated optoelectronics circuits","authors":"L. Tomasetta","doi":"10.1109/IEDM.1980.189923","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189923","url":null,"abstract":"Recent improvements in fiber optic semiconductor components (i.e. lasers and detectors) will lead to the rapid deployment of fiber optic systems in the next few years. This does not, however, signal the end of research in semiconductor optoelectronics, but rather the opening of new and ultimately more widespread application of optoelectronic devices. New and powerful signal processing and data transmission functions will become possible by the marriage of optical and electronic functions on a single monolithic wafer. Applications will range from simple single channel integrated repeaters to repeaters with error correcting electronics and switching capabilities to complex distributed computer data bus networks capable of interconnecting dozens of the computers of the 1990's with a circulating data stream operating in excess of 100 Gigabits/sec.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128769629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189817
M. Latif, P. R. Bryant
A triggering mechanism of second breakdown is proposed, which depends solely upon the existence of multiple equilibrium points for certain biasing conditions. Using a simple one-dimensional model we are able to predict that part of the safe-operating-area boundary limited by second breakdown. We find that our computed results compare favourably with various experimental measurements made.
{"title":"A new model for the second breakdown of bipolar transistors","authors":"M. Latif, P. R. Bryant","doi":"10.1109/IEDM.1980.189817","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189817","url":null,"abstract":"A triggering mechanism of second breakdown is proposed, which depends solely upon the existence of multiple equilibrium points for certain biasing conditions. Using a simple one-dimensional model we are able to predict that part of the safe-operating-area boundary limited by second breakdown. We find that our computed results compare favourably with various experimental measurements made.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128371797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189886
J. Fan, C. Bozler, R. Gale, R. McClelland, R. L. Chapman, G. Turner, H. J. Zeiger
By using an n+/p/p+structure, we have previously succeeded in fabricating GaAs solar cells on single-crystal GaAs and Ge substrates, with conversion efficiency of 21% at AM1. Three approaches are being used to lower the cost of such cells, preparation of large-grained Ge sheets on low-cost substrates, preparation of heteroepitaxial Ge films on inexpensive Si sheets, and preparation of thin single-crystal GaAs layers on reusable GaAs substrates. Important advances have been achieved in all three areas. Crystallites 2 µm × 100 µm have been obtained on fused silica substrates by heating amorphous Ge films with a scanned Nd:YAG laser. Heteroepitaxial Ge films have also been obtained on Si substrates by transient heating, and epitaxial GaAs layers have been grown on such films. Single-crystal GaAs layers as thin as 5 µm have been separated from reusable GaAs substrates by a new process named CLEFT. A 15% (AMI) GaAs solar cell, only 8 µm thick and bonded to a glass substrate, has been fabricated. With these developments, low-cost high-efficiency, GaAs cells may well become a reality.
{"title":"Recent advances in high efficiency, low-cost GaAs solar cells","authors":"J. Fan, C. Bozler, R. Gale, R. McClelland, R. L. Chapman, G. Turner, H. J. Zeiger","doi":"10.1109/IEDM.1980.189886","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189886","url":null,"abstract":"By using an n+/p/p+structure, we have previously succeeded in fabricating GaAs solar cells on single-crystal GaAs and Ge substrates, with conversion efficiency of 21% at AM1. Three approaches are being used to lower the cost of such cells, preparation of large-grained Ge sheets on low-cost substrates, preparation of heteroepitaxial Ge films on inexpensive Si sheets, and preparation of thin single-crystal GaAs layers on reusable GaAs substrates. Important advances have been achieved in all three areas. Crystallites 2 µm × 100 µm have been obtained on fused silica substrates by heating amorphous Ge films with a scanned Nd:YAG laser. Heteroepitaxial Ge films have also been obtained on Si substrates by transient heating, and epitaxial GaAs layers have been grown on such films. Single-crystal GaAs layers as thin as 5 µm have been separated from reusable GaAs substrates by a new process named CLEFT. A 15% (AMI) GaAs solar cell, only 8 µm thick and bonded to a glass substrate, has been fabricated. With these developments, low-cost high-efficiency, GaAs cells may well become a reality.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125916417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189785
G. Groshart, R. Moats
Injected-beam crossed-field amplifiers (IBCFAs) are admirably suited for multimode transmitting amplifiers because beam current can be continuously varied from zero to maximum with good beam focusing and with high efficiency over a substantial range of beam currents. The range of pulse-up while maintaining high efficiency can be greatly extended by changing magnetic field levels and applied voltages at the same time. Further improvement in pulse-up operation is made possible by depressed collector techniques. Measurements of IBCFAs designed for 10 dB pulse-up in X-Band from 1.5 to 15 kW peak power output over a 10% bandwidth with low phase noise are presented, including the effects of the depressed collector and magnetic field switching.
{"title":"Multimode injected-beam crossed-field amplifier for coherent airborne radar","authors":"G. Groshart, R. Moats","doi":"10.1109/IEDM.1980.189785","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189785","url":null,"abstract":"Injected-beam crossed-field amplifiers (IBCFAs) are admirably suited for multimode transmitting amplifiers because beam current can be continuously varied from zero to maximum with good beam focusing and with high efficiency over a substantial range of beam currents. The range of pulse-up while maintaining high efficiency can be greatly extended by changing magnetic field levels and applied voltages at the same time. Further improvement in pulse-up operation is made possible by depressed collector techniques. Measurements of IBCFAs designed for 10 dB pulse-up in X-Band from 1.5 to 15 kW peak power output over a 10% bandwidth with low phase noise are presented, including the effects of the depressed collector and magnetic field switching.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127178675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189932
L. Tannas
The most critical problem in flat-panel displays reduces to that of addressing the large array of picture elements (pixels). Numerous technologies have evolved for creating an image, including gas discharge, vacuum fluorescence, light-emitting diodes, electroluminescence, liquid crystallinity, and electrochromism. The problem of addressing the array for an eight-character display with 64 pixels is critical and becomes awesome for a 2000-character display or a TV video display with approximately 200,000 pixels. This paper reviews the status of technology for addressing a flat-panel display, presents new techniques for the analysis of large arrays, and describes the state of the art of display drive electronics.
{"title":"Matrix addressing flat-panel displays","authors":"L. Tannas","doi":"10.1109/IEDM.1980.189932","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189932","url":null,"abstract":"The most critical problem in flat-panel displays reduces to that of addressing the large array of picture elements (pixels). Numerous technologies have evolved for creating an image, including gas discharge, vacuum fluorescence, light-emitting diodes, electroluminescence, liquid crystallinity, and electrochromism. The problem of addressing the array for an eight-character display with 64 pixels is critical and becomes awesome for a 2000-character display or a TV video display with approximately 200,000 pixels. This paper reviews the status of technology for addressing a flat-panel display, presents new techniques for the analysis of large arrays, and describes the state of the art of display drive electronics.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113956627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189918
H. Becke, R. P. Misra
R & D was carried out on gate turn-off devices, 1. An optimized, high speed epi-base GTO was developed. Fall times of <200ns and rise times 50A/cm2@ Tj=125°C. The fast trand tfresponse was obtained through a controlled gold distribution in the active device volume. A voltage source with series inductance at the gate will establish safe turn-off conditions; a 1.6KW switching capability @ 50kHz is calculated for a chip of 0.15cm2. 2. The introduction of anode shorts improves turn-off, however, turn-on sensitivity is substantially reduced. Replacing these shorts with Schottky barrier diodes fully restores the turn-on sensitivity. Devices with identical VT and similar turn-off capability, ≃ 30A @ 125°c, show about an order of magnitude improvement in turn-on sensitivity @ -40°C if Schottky barriers are added. 3. A dynamic ballasting concept was introduced. Through resistive, edge metalized cathodes the operational range for GTO's was extended from-60°C for turn-on (Igt=300µA) to +150°C for turn-off (J>55A/cm2) The formation of high current density filaments is countered.
{"title":"Investigations of gate turn-off structures","authors":"H. Becke, R. P. Misra","doi":"10.1109/IEDM.1980.189918","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189918","url":null,"abstract":"R & D was carried out on gate turn-off devices, 1. An optimized, high speed epi-base GTO was developed. Fall times of <200ns and rise times 50A/cm2@ Tj=125°C. The fast trand tfresponse was obtained through a controlled gold distribution in the active device volume. A voltage source with series inductance at the gate will establish safe turn-off conditions; a 1.6KW switching capability @ 50kHz is calculated for a chip of 0.15cm2. 2. The introduction of anode shorts improves turn-off, however, turn-on sensitivity is substantially reduced. Replacing these shorts with Schottky barrier diodes fully restores the turn-on sensitivity. Devices with identical VT and similar turn-off capability, ≃ 30A @ 125°c, show about an order of magnitude improvement in turn-on sensitivity @ -40°C if Schottky barriers are added. 3. A dynamic ballasting concept was introduced. Through resistive, edge metalized cathodes the operational range for GTO's was extended from-60°C for turn-on (Igt=300µA) to +150°C for turn-off (J>55A/cm2) The formation of high current density filaments is countered.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114483487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189921
I. Grekhov, A. Kardo-Sysoev, L. S. Kostina, S. Shenderey
{"title":"High power subnanosecond switch","authors":"I. Grekhov, A. Kardo-Sysoev, L. S. Kostina, S. Shenderey","doi":"10.1109/IEDM.1980.189921","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189921","url":null,"abstract":"","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127861385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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