Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189921
I. Grekhov, A. Kardo-Sysoev, L. S. Kostina, S. Shenderey
{"title":"High power subnanosecond switch","authors":"I. Grekhov, A. Kardo-Sysoev, L. S. Kostina, S. Shenderey","doi":"10.1109/IEDM.1980.189921","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189921","url":null,"abstract":"","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127861385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189923
L. Tomasetta
Recent improvements in fiber optic semiconductor components (i.e. lasers and detectors) will lead to the rapid deployment of fiber optic systems in the next few years. This does not, however, signal the end of research in semiconductor optoelectronics, but rather the opening of new and ultimately more widespread application of optoelectronic devices. New and powerful signal processing and data transmission functions will become possible by the marriage of optical and electronic functions on a single monolithic wafer. Applications will range from simple single channel integrated repeaters to repeaters with error correcting electronics and switching capabilities to complex distributed computer data bus networks capable of interconnecting dozens of the computers of the 1990's with a circulating data stream operating in excess of 100 Gigabits/sec.
{"title":"The evolution from components to integrated optoelectronics circuits","authors":"L. Tomasetta","doi":"10.1109/IEDM.1980.189923","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189923","url":null,"abstract":"Recent improvements in fiber optic semiconductor components (i.e. lasers and detectors) will lead to the rapid deployment of fiber optic systems in the next few years. This does not, however, signal the end of research in semiconductor optoelectronics, but rather the opening of new and ultimately more widespread application of optoelectronic devices. New and powerful signal processing and data transmission functions will become possible by the marriage of optical and electronic functions on a single monolithic wafer. Applications will range from simple single channel integrated repeaters to repeaters with error correcting electronics and switching capabilities to complex distributed computer data bus networks capable of interconnecting dozens of the computers of the 1990's with a circulating data stream operating in excess of 100 Gigabits/sec.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128769629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189775
S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki
The stress-insensitive configuration of a Ladder network for a high accuracy monolithic D/A converter is described. To avoid the piezoresistance effect, a stress-insensitive crystal axis is found from the result of the new stress analysis using simple resistors as a strain-sensitive device, which is shifted by 45° from a conventional axis on a surface of
{"title":"Stress-insensitive diffused resistor network for a high accuracy monolithic D/A converter","authors":"S. Komatsu, K. Suzuki, N. Iida, T. Aoki, T. Ito, H. Sawazaki","doi":"10.1109/IEDM.1980.189775","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189775","url":null,"abstract":"The stress-insensitive configuration of a Ladder network for a high accuracy monolithic D/A converter is described. To avoid the piezoresistance effect, a stress-insensitive crystal axis is found from the result of the new stress analysis using simple resistors as a strain-sensitive device, which is shifted by 45° from a conventional axis on a surface of","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129128709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189776
T. Chow, A. Steckl
Planar plasma etching of Mo and MoSi2using NF3gas mixtures is reported for the first time. The etch rates of Mo, MoSi2, and SiO2were determined as a function of RF current and gas pressure. The etch rate selectivities of Mo:SiO2and MoSi2:SiO2was found to be relatively constant at respectively 2-3:1 and 4-6:1 over a broad range of parameters. Diluting the NF3to 10% in Argon lowered the etch rate by a factor of 5-6. Improved line edge profile obtained with NF3etching is shown.
{"title":"Planar plasma etching of Mo and MoSi2using NF3","authors":"T. Chow, A. Steckl","doi":"10.1109/IEDM.1980.189776","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189776","url":null,"abstract":"Planar plasma etching of Mo and MoSi<inf>2</inf>using NF<inf>3</inf>gas mixtures is reported for the first time. The etch rates of Mo, MoSi<inf>2</inf>, and SiO<inf>2</inf>were determined as a function of RF current and gas pressure. The etch rate selectivities of Mo:SiO<inf>2</inf>and MoSi<inf>2</inf>:SiO<inf>2</inf>was found to be relatively constant at respectively 2-3:1 and 4-6:1 over a broad range of parameters. Diluting the NF<inf>3</inf>to 10% in Argon lowered the etch rate by a factor of 5-6. Improved line edge profile obtained with NF<inf>3</inf>etching is shown.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132354536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189785
G. Groshart, R. Moats
Injected-beam crossed-field amplifiers (IBCFAs) are admirably suited for multimode transmitting amplifiers because beam current can be continuously varied from zero to maximum with good beam focusing and with high efficiency over a substantial range of beam currents. The range of pulse-up while maintaining high efficiency can be greatly extended by changing magnetic field levels and applied voltages at the same time. Further improvement in pulse-up operation is made possible by depressed collector techniques. Measurements of IBCFAs designed for 10 dB pulse-up in X-Band from 1.5 to 15 kW peak power output over a 10% bandwidth with low phase noise are presented, including the effects of the depressed collector and magnetic field switching.
{"title":"Multimode injected-beam crossed-field amplifier for coherent airborne radar","authors":"G. Groshart, R. Moats","doi":"10.1109/IEDM.1980.189785","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189785","url":null,"abstract":"Injected-beam crossed-field amplifiers (IBCFAs) are admirably suited for multimode transmitting amplifiers because beam current can be continuously varied from zero to maximum with good beam focusing and with high efficiency over a substantial range of beam currents. The range of pulse-up while maintaining high efficiency can be greatly extended by changing magnetic field levels and applied voltages at the same time. Further improvement in pulse-up operation is made possible by depressed collector techniques. Measurements of IBCFAs designed for 10 dB pulse-up in X-Band from 1.5 to 15 kW peak power output over a 10% bandwidth with low phase noise are presented, including the effects of the depressed collector and magnetic field switching.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127178675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189787
W. M. Black, W. M. Bollen, R. Tobin, R. Parker, L. Barnett, G. Farney
A hybrid inverted coaxial magnetron (HICM) is being developed to produce high peak power levels at S band. This paper discusses its experimental performance with a short 40 nsec pulse forming network the results of a preliminary air breakdown study, and modifications to extend to a longer 250 nsec pulse width. In the short pulse mode the magnetron peak power levels are on the order 500 to 800 MW. The frequency of 3.24 GHz has been measured by gating the pulse and using a solid-state dispersive line. The large peak electric fieldE_{p} = 5 times 10^{4}V/cm, which this system generates (without resonant cavities), gives a unique capability to study microwave interaction and energy deposition in air breakdown plasma. The breakdown of air for pressures up to 100 Torr has been observed by monitoring the density of the resulting plasma and its light output. The plasma density at 10 Torr is approximately 100 nc; ncis the critical plasma density where the microwave frequency equals the plasma frequency. The pulse width of the HICM will be extended to 250 nsec with a new pulse forming network which allows the examination of the hydrodynamic breakdown effects. A particularly interesting feature of the magnetron modification for longer pulse operation is the use of a novel high-voltage insulator. A newly developed circular waveguide TEonmode coupler allows axial seperation of two lengths of the eight inch output waveguide inside a larger diameter tube. The result is an effective dc isolation with very efficient r.f. transmission.
{"title":"A high power magnetron for air breakdown studies","authors":"W. M. Black, W. M. Bollen, R. Tobin, R. Parker, L. Barnett, G. Farney","doi":"10.1109/IEDM.1980.189787","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189787","url":null,"abstract":"A hybrid inverted coaxial magnetron (HICM) is being developed to produce high peak power levels at S band. This paper discusses its experimental performance with a short 40 nsec pulse forming network the results of a preliminary air breakdown study, and modifications to extend to a longer 250 nsec pulse width. In the short pulse mode the magnetron peak power levels are on the order 500 to 800 MW. The frequency of 3.24 GHz has been measured by gating the pulse and using a solid-state dispersive line. The large peak electric fieldE_{p} = 5 times 10^{4}V/cm, which this system generates (without resonant cavities), gives a unique capability to study microwave interaction and energy deposition in air breakdown plasma. The breakdown of air for pressures up to 100 Torr has been observed by monitoring the density of the resulting plasma and its light output. The plasma density at 10 Torr is approximately 100 nc; ncis the critical plasma density where the microwave frequency equals the plasma frequency. The pulse width of the HICM will be extended to 250 nsec with a new pulse forming network which allows the examination of the hydrodynamic breakdown effects. A particularly interesting feature of the magnetron modification for longer pulse operation is the use of a novel high-voltage insulator. A newly developed circular waveguide TEonmode coupler allows axial seperation of two lengths of the eight inch output waveguide inside a larger diameter tube. The result is an effective dc isolation with very efficient r.f. transmission.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116884887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189769
Y. Tajima, B. Wrona, K. Mishima
A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.
{"title":"GaAs FET large signal model and design applications","authors":"Y. Tajima, B. Wrona, K. Mishima","doi":"10.1109/IEDM.1980.189769","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189769","url":null,"abstract":"A large signal GaAs FET model is derived based on dc characteristics of the devices. Analytical expressions of nonlinear elements in the model are presented in a form convenient for circuit design. Power saturation and gain characteristics of a GaAs FET are studied theoretically and experimentally. An oscillator design employing the large signal model is demonstrated.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132435787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189892
H. Lam
Recent work in laser recrystallization of deposited polysilicon on a 1 µm thick oxide layer grown on a silicon wafer has enhanced the hope of achieving a silicon-on-insulator (SOI) material system that is far superior than that of silicon-on-sapphire (SOS) and is suitable for VLSI application. Surface mobility measured in devices fabricated in the laser-recrystallized SOI material approaches that fabricated in bulk silicon. The bottom silicon and silicon dioxide interface had been shown to be device-worthy. Being a technology based on silicon, low cost and high yield can be expected. This paper summarizes the development of the laser-recrystallized SOI technology to date and what it takes to make this technology commercially viable.
{"title":"Laser-recrystallized silicon-on-oxide—The ideal silicon-on-insulator structure for VLSI?","authors":"H. Lam","doi":"10.1109/IEDM.1980.189892","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189892","url":null,"abstract":"Recent work in laser recrystallization of deposited polysilicon on a 1 µm thick oxide layer grown on a silicon wafer has enhanced the hope of achieving a silicon-on-insulator (SOI) material system that is far superior than that of silicon-on-sapphire (SOS) and is suitable for VLSI application. Surface mobility measured in devices fabricated in the laser-recrystallized SOI material approaches that fabricated in bulk silicon. The bottom silicon and silicon dioxide interface had been shown to be device-worthy. Being a technology based on silicon, low cost and high yield can be expected. This paper summarizes the development of the laser-recrystallized SOI technology to date and what it takes to make this technology commercially viable.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128192375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189817
M. Latif, P. R. Bryant
A triggering mechanism of second breakdown is proposed, which depends solely upon the existence of multiple equilibrium points for certain biasing conditions. Using a simple one-dimensional model we are able to predict that part of the safe-operating-area boundary limited by second breakdown. We find that our computed results compare favourably with various experimental measurements made.
{"title":"A new model for the second breakdown of bipolar transistors","authors":"M. Latif, P. R. Bryant","doi":"10.1109/IEDM.1980.189817","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189817","url":null,"abstract":"A triggering mechanism of second breakdown is proposed, which depends solely upon the existence of multiple equilibrium points for certain biasing conditions. Using a simple one-dimensional model we are able to predict that part of the safe-operating-area boundary limited by second breakdown. We find that our computed results compare favourably with various experimental measurements made.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128371797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189760
H. Vaes, J. Appels
A magnetron injection gun operating with temperature limited electron emission has been designed for a gyrotron amplifier. A series of computer models of the gun anode region were used to determine selected thermal and structural characteristics. Their effects on electron beam energy, velocity spread, and temperature were evaluate. The Thermal analysis yielded the steady state temperatures of 137 node points. Thermally induced mechanical expansions were found to be 0.20% axially and 0.82% radially. In the three dimensional coordinate sytem utilized, the stress in 373 elements were numerically evaluated. The cathode heater power brought the cathode emitter up to 1068°C in 500 seconds. The cathode cooling due to electron emission was found to increase the steady state heater input power requirement by 11% (for an emitter temperature of 1068°C) from 9 W to 11 W. The electron trajectory analysis included an evaluation of the beam energy, velocity spread, and temperature. The effect of the deformed mechanical shapes on the beam paremeters was determined. A two dimentional computer simulation was used to graphically depict the electron trajectories in the gun anode region.
{"title":"High voltage, high current lateral devices","authors":"H. Vaes, J. Appels","doi":"10.1109/IEDM.1980.189760","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189760","url":null,"abstract":"A magnetron injection gun operating with temperature limited electron emission has been designed for a gyrotron amplifier. A series of computer models of the gun anode region were used to determine selected thermal and structural characteristics. Their effects on electron beam energy, velocity spread, and temperature were evaluate. The Thermal analysis yielded the steady state temperatures of 137 node points. Thermally induced mechanical expansions were found to be 0.20% axially and 0.82% radially. In the three dimensional coordinate sytem utilized, the stress in 373 elements were numerically evaluated. The cathode heater power brought the cathode emitter up to 1068°C in 500 seconds. The cathode cooling due to electron emission was found to increase the steady state heater input power requirement by 11% (for an emitter temperature of 1068°C) from 9 W to 11 W. The electron trajectory analysis included an evaluation of the beam energy, velocity spread, and temperature. The effect of the deformed mechanical shapes on the beam paremeters was determined. A two dimentional computer simulation was used to graphically depict the electron trajectories in the gun anode region.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134518675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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