Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189795
E. Yang, E. Poon, C.M. Wu, H. Card, W. Hwang
A theoretical analysis is made to explain the non-exponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level Eo. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.
{"title":"Impediment of the majority carrier current by grain boundary potential in Al-poly-Si Schottky barrier solar cells","authors":"E. Yang, E. Poon, C.M. Wu, H. Card, W. Hwang","doi":"10.1109/IEDM.1980.189795","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189795","url":null,"abstract":"A theoretical analysis is made to explain the non-exponential current-voltage characteristics observed in Al-Poly-Si (Wacker) Schottky-barrier solar cells fabricated in our laboratory. In this model, we consider an effective grain boundary in parallel with the Schottky junction. Comparison between experimental data and numerical calculation indicates that the grain boundary may be represented by a fixed interface charge, a uniformly distributed interface state density and a neutral level Eo. Diodes fabricated in regions with high-angle grain boundaries behave in a manner which conforms closely with the proposed model.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129962502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189937
L. Hale, B. García, R. D. Ketchpel, T. C. Lim
There is an increasing demand for multi-color flat panel matrix displays. Recent work (1) has shown that thin film electroluminescent devices fabricated from ZnS doped with manganese, sandwiched between two dielectric layers, are capable of high brightness and long life. These devices exhibit many of the characteristics required for flat matrix panels. Using the same structure as above, a green emitting film has been developed which used TbF3as the activator. The brightness of this film is 700 fl which is three times brighter and requires significantly lower drive voltage than previously reported (2). Data will be presented indicating the results of annealing at different temperatures in order to optimize the light output. Electro-optic data indicates that the tunnel field emission model previously reported for Mn activated ZnS films is valid for the TbF3activated ZnS films. Spectroscopic data will be given on other rare earth activated films.
{"title":"Multi-color thin film emitters","authors":"L. Hale, B. García, R. D. Ketchpel, T. C. Lim","doi":"10.1109/IEDM.1980.189937","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189937","url":null,"abstract":"There is an increasing demand for multi-color flat panel matrix displays. Recent work (1) has shown that thin film electroluminescent devices fabricated from ZnS doped with manganese, sandwiched between two dielectric layers, are capable of high brightness and long life. These devices exhibit many of the characteristics required for flat matrix panels. Using the same structure as above, a green emitting film has been developed which used TbF3as the activator. The brightness of this film is 700 fl which is three times brighter and requires significantly lower drive voltage than previously reported (2). Data will be presented indicating the results of annealing at different temperatures in order to optimize the light output. Electro-optic data indicates that the tunnel field emission model previously reported for Mn activated ZnS films is valid for the TbF3activated ZnS films. Spectroscopic data will be given on other rare earth activated films.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130755997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189818
D. Blackburn, D. Berning
Experimental results showing the influence of reverse-base current, case temperature, collector inductance, and peak collector current on the reverse-bias second breakdown (RBSB) behavior of high-voltage n+-p-n--n+power transistors are presented. The results are in qualitative agreement with the theory that avalanche injection initiates RBSB. The inductance and peak collector current results are in conflict with the theory that RBSB is initiated at a critical temperature. It is concluded that for these devices for the condition studied, RBSB is not initiated at a critical temperature. It is shown that the theory of current focusing, in conjunction with the theory of avalanche injection, does not accurately predict the RBSB conditions during device sustaining. It is proposed that other mechanisms in addition to current focusing contribute to the nonuniformity of current during transistor turnoff.
{"title":"An experimental study of reverse-bias second breakdown","authors":"D. Blackburn, D. Berning","doi":"10.1109/IEDM.1980.189818","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189818","url":null,"abstract":"Experimental results showing the influence of reverse-base current, case temperature, collector inductance, and peak collector current on the reverse-bias second breakdown (RBSB) behavior of high-voltage n+-p-n--n+power transistors are presented. The results are in qualitative agreement with the theory that avalanche injection initiates RBSB. The inductance and peak collector current results are in conflict with the theory that RBSB is initiated at a critical temperature. It is concluded that for these devices for the condition studied, RBSB is not initiated at a critical temperature. It is shown that the theory of current focusing, in conjunction with the theory of avalanche injection, does not accurately predict the RBSB conditions during device sustaining. It is proposed that other mechanisms in addition to current focusing contribute to the nonuniformity of current during transistor turnoff.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126467744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189928
S. Garverick, S. Senturia
Surface impedance measurements are employed in a variety of applications such as moisture sensing (1), (2). Sheet resistances as high as 1016Ohms/sq are often encountered (3), and reliable measurements are difficult to obtain. This paper reports a planar MOS device and associated measurement technique that can be used to make AC sheet resistance measurements in the frequency range 1 Hz - 10 kHz, and which yields reproducible measurements for sheet resistances as high as 1016Ohms/sq.
{"title":"An MOS chip for surface impedance measurement and moisture monitoring","authors":"S. Garverick, S. Senturia","doi":"10.1109/IEDM.1980.189928","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189928","url":null,"abstract":"Surface impedance measurements are employed in a variety of applications such as moisture sensing (1), (2). Sheet resistances as high as 1016Ohms/sq are often encountered (3), and reliable measurements are difficult to obtain. This paper reports a planar MOS device and associated measurement technique that can be used to make AC sheet resistance measurements in the frequency range 1 Hz - 10 kHz, and which yields reproducible measurements for sheet resistances as high as 1016Ohms/sq.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125738757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189916
N. Konishi, M. Mori, M. Naito, T. Tanaka, K. Miyata, M. Okamura
A high-voltage light activated thyristor for high-voltage direct-current (HVDC) coverters has been developed. An excellent trade-off between dv/dt capability and optical triggering sensitivity has been achieved by irradiating the light through the thin n-emitter layer of the gate thyristor. The developed 80 mm diameter thyristor has the blocking voltage of 6000 V, average on-state current 1500 A, the dv/dt capability of more than 2000 V/µs, the minimum triggering light power of less than 10 mW.
研制了一种用于高压直流(HVDC)变流器的高压光激活晶闸管。通过栅极晶闸管的薄n-发射层照射光，实现了dv/dt能力和光触发灵敏度之间的良好权衡。所研制的80 mm直径晶闸管阻断电压为6000 V，平均导通电流为1500 A, dv/dt能力大于2000 V/µs，最小触发光功率小于10 mW。
{"title":"A 6000 V, 1500 A light activated thyristor","authors":"N. Konishi, M. Mori, M. Naito, T. Tanaka, K. Miyata, M. Okamura","doi":"10.1109/IEDM.1980.189916","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189916","url":null,"abstract":"A high-voltage light activated thyristor for high-voltage direct-current (HVDC) coverters has been developed. An excellent trade-off between dv/dt capability and optical triggering sensitivity has been achieved by irradiating the light through the thin n-emitter layer of the gate thyristor. The developed 80 mm diameter thyristor has the blocking voltage of 6000 V, average on-state current 1500 A, the dv/dt capability of more than 2000 V/µs, the minimum triggering light power of less than 10 mW.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124928139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189955
B. Baliga
A recessed gate structure is described for vertical channel junction gate field effect transistors. This structure can be fabricated using a self-aligned source-gate process with the use of only two masking steps for the fabrication of the device active region. Devices fabricated with this structure exhibit blocking voltages of upto 400 volts with blocking gains ranging from 3 to 12 depending upon the groove depth. These devices have a unity power gain cut-off frequency above 500 MHz.
{"title":"Recessed gate junction field effect transistors","authors":"B. Baliga","doi":"10.1109/IEDM.1980.189955","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189955","url":null,"abstract":"A recessed gate structure is described for vertical channel junction gate field effect transistors. This structure can be fabricated using a self-aligned source-gate process with the use of only two masking steps for the fabrication of the device active region. Devices fabricated with this structure exhibit blocking voltages of upto 400 volts with blocking gains ranging from 3 to 12 depending upon the groove depth. These devices have a unity power gain cut-off frequency above 500 MHz.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121507261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189873
G. Dohler, W. Bowen, F. Scafuri, G. Groshart
To determine allowable tolerances in TWT manufacturing, a beam tester capable of mapping the beam automatically in three dimensions within the PPM stack has been made operational. Beam position and beam ripple have been measured as a function of beam injection eccentricity, gun tilt, and anode-to-barrel spacing. The influence of cross fields in the PPM stack appears to be severe. Correlation between experimental results and the two-dimensional Hermannsfeldt computer code predictions have been made.
{"title":"Experimental evaluation of PPM focussed electron beams","authors":"G. Dohler, W. Bowen, F. Scafuri, G. Groshart","doi":"10.1109/IEDM.1980.189873","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189873","url":null,"abstract":"To determine allowable tolerances in TWT manufacturing, a beam tester capable of mapping the beam automatically in three dimensions within the PPM stack has been made operational. Beam position and beam ripple have been measured as a function of beam injection eccentricity, gun tilt, and anode-to-barrel spacing. The influence of cross fields in the PPM stack appears to be severe. Correlation between experimental results and the two-dimensional Hermannsfeldt computer code predictions have been made.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"254 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113990952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189925
K. Petersen, A. Shartel
A cantilever beam accelerometer has been demonstrated in which the small cantilever sensing element is integrated with and fabricated alongside MOS detection circuitry. Fully compatible and conventional materials and processing steps are employed throughout the fabrication schedule. Accelerations of the chip normal to its surface induce motions in the cantilever beam. These motions result in capacitance variations (40 attofarads/g of acceleration) which drive the simple MOS detection circuit. Sensitivities greater than 2 mV/g of acceleration were measured, corresponding to beam motions of about 58 nm/g, in close agreement with calculations. The total area of the detector/circuit combination was about 15,000 µm2(24 mil2), at least two orders of magnitude smaller than any other solid state analog accelerometer yet reported.
{"title":"Micromechanical accelerometer integrated with MOS detection circuitry","authors":"K. Petersen, A. Shartel","doi":"10.1109/IEDM.1980.189925","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189925","url":null,"abstract":"A cantilever beam accelerometer has been demonstrated in which the small cantilever sensing element is integrated with and fabricated alongside MOS detection circuitry. Fully compatible and conventional materials and processing steps are employed throughout the fabrication schedule. Accelerations of the chip normal to its surface induce motions in the cantilever beam. These motions result in capacitance variations (40 attofarads/g of acceleration) which drive the simple MOS detection circuit. Sensitivities greater than 2 mV/g of acceleration were measured, corresponding to beam motions of about 58 nm/g, in close agreement with calculations. The total area of the detector/circuit combination was about 15,000 µm2(24 mil2), at least two orders of magnitude smaller than any other solid state analog accelerometer yet reported.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133332364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189780
J. A. Saloom
At most conference sessions microwave tube workers present their results with few, if any, semiconductor workers in the audience. The semiconductor conferences likewise are not attended by microwave tube workers. The purpose of this paper is to present recent technology advances in both tubes and semiconductor based sources and amplifiers. In addition, the areas of clear advantage of each type source/amplifier will be delineated. Where the choice of tube/solid state source is not clear at this time the technology trends will be discussed. The market sizes and trends in the marketplace will also be presented.
{"title":"Comparative status report on microwave sources","authors":"J. A. Saloom","doi":"10.1109/IEDM.1980.189780","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189780","url":null,"abstract":"At most conference sessions microwave tube workers present their results with few, if any, semiconductor workers in the audience. The semiconductor conferences likewise are not attended by microwave tube workers. The purpose of this paper is to present recent technology advances in both tubes and semiconductor based sources and amplifiers. In addition, the areas of clear advantage of each type source/amplifier will be delineated. Where the choice of tube/solid state source is not clear at this time the technology trends will be discussed. The market sizes and trends in the marketplace will also be presented.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130330845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/IEDM.1980.189889
M. Han, W. Anderson, R. Lahri, J. Coleman, H. Wiesmann
Measurement of short circuit current of P-N junction a-Si:H solar cells shows that photogenerated carriers are collected by field assisted process from the depletion region of the N-I layer in N-I-P devices and the P-I layer in P-I-N devices. The I-layer behaves as an N-layer under the illumination. The results of spectral response analysis indicate a very strong absorption in the doped layer. Reduction of doped layer thickness from a few hundred angstroms to less than 100Å improves Jscby 20-30%.
{"title":"Current collection mechanisms in p-n junction a-Si:H solar cells using spectral response analysis","authors":"M. Han, W. Anderson, R. Lahri, J. Coleman, H. Wiesmann","doi":"10.1109/IEDM.1980.189889","DOIUrl":"https://doi.org/10.1109/IEDM.1980.189889","url":null,"abstract":"Measurement of short circuit current of P-N junction a-Si:H solar cells shows that photogenerated carriers are collected by field assisted process from the depletion region of the N-I layer in N-I-P devices and the P-I layer in P-I-N devices. The I-layer behaves as an N-layer under the illumination. The results of spectral response analysis indicate a very strong absorption in the doped layer. Reduction of doped layer thickness from a few hundred angstroms to less than 100Å improves Jscby 20-30%.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130393089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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