Simultaneous and continuous control over polarization and wavelength-two orthogonal and information-rich degrees of freedom-remains a central challenge in metasurface photonics, long hindered by intrinsic dispersion constraints and structural degeneracy. Here, we customize continuous polarization-wavelength mapping through a nonlocal metasurface platform that decouples birefringent evolution from structural dispersion. We achieve programmable, spectrally resolved polarization shaping across the broadband mid-infrared regime by introducing an equivalent nonlocal Jones matrix formalism and a dimension-interlaced vectorial diffraction neural network. This framework enables fully continuous and arbitrarily prescribed mapping across the joint polarization-wavelength space-beyond the capabilities of segmented or interleaved metasurface designs. We experimentally demonstrate non-degenerate multicolor vectorial holography, broadband achromatic imaging, and arbitrary elliptical polarization multiplexing with high fidelity and minimal crosstalk, maintaining strong channel isolation. Our results establish a scalable route toward continuous-domain photonic encoding, offering a powerful foundation for ultracompact optical communication, vectorial information encryption, and high-dimensional light-field processing.
{"title":"Continuous polarization-wavelength mapping with nonlocal metasurfaces.","authors":"Jiuxu Wang,Jie Wang,Feilong Yu,Jin Chen,Rongsheng Chen,Tianxiong Geng,Rong Jin,Yiran Zhou,Tongwen Zheng,Guanhai Li,Xiaoshuang Chen,Wei Lu","doi":"10.1038/s41377-026-02233-5","DOIUrl":"https://doi.org/10.1038/s41377-026-02233-5","url":null,"abstract":"Simultaneous and continuous control over polarization and wavelength-two orthogonal and information-rich degrees of freedom-remains a central challenge in metasurface photonics, long hindered by intrinsic dispersion constraints and structural degeneracy. Here, we customize continuous polarization-wavelength mapping through a nonlocal metasurface platform that decouples birefringent evolution from structural dispersion. We achieve programmable, spectrally resolved polarization shaping across the broadband mid-infrared regime by introducing an equivalent nonlocal Jones matrix formalism and a dimension-interlaced vectorial diffraction neural network. This framework enables fully continuous and arbitrarily prescribed mapping across the joint polarization-wavelength space-beyond the capabilities of segmented or interleaved metasurface designs. We experimentally demonstrate non-degenerate multicolor vectorial holography, broadband achromatic imaging, and arbitrary elliptical polarization multiplexing with high fidelity and minimal crosstalk, maintaining strong channel isolation. Our results establish a scalable route toward continuous-domain photonic encoding, offering a powerful foundation for ultracompact optical communication, vectorial information encryption, and high-dimensional light-field processing.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147439371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-13DOI: 10.1038/s41377-026-02240-6
Kieran Hymas,Jack B Muir,Daniel Tibben,Joel van Embden,Tadahiko Hirai,Christopher J Dunn,Daniel E Gómez,James A Hutchison,Trevor A Smith,James Q Quach
Superextensivity, where the response of a physical system scales super-linearly with size, originates from collective quantum effects and provides a promising route to augment next-generation quantum technologies. While recent work has demonstrated superextensive behaviour in the coherent dynamics of quantum systems, these effects typically occur on short timescales, prohibiting their practical utility. In contrast, triggering steady-state superextensive effects in, for example, a generated electric current, remains unexplored despite the immediate impact on photovoltaic technologies. Here, we utilise a microcavity quantum battery as an experimental platform that superextensively captures light energy and converts it to an electric current via the incorporation of charge transport layers into the resonant microcavity. This architecture enables, for the first time, a complete quantum battery charge-discharge cycle. We demonstrate that strong light-matter coupling induced by the microcavity leads to superextensive scaling of the steady-state electrical discharging power under low-intensity, incoherent illumination. Our results provide the first experimental demonstration of superextensive light-to-charge conversion in steady-state, highlighting the feasibility of leveraging strong light-matter coupling for enhanced energy harvesting under low-light conditions.
{"title":"Superextensive electrical power from a quantum battery.","authors":"Kieran Hymas,Jack B Muir,Daniel Tibben,Joel van Embden,Tadahiko Hirai,Christopher J Dunn,Daniel E Gómez,James A Hutchison,Trevor A Smith,James Q Quach","doi":"10.1038/s41377-026-02240-6","DOIUrl":"https://doi.org/10.1038/s41377-026-02240-6","url":null,"abstract":"Superextensivity, where the response of a physical system scales super-linearly with size, originates from collective quantum effects and provides a promising route to augment next-generation quantum technologies. While recent work has demonstrated superextensive behaviour in the coherent dynamics of quantum systems, these effects typically occur on short timescales, prohibiting their practical utility. In contrast, triggering steady-state superextensive effects in, for example, a generated electric current, remains unexplored despite the immediate impact on photovoltaic technologies. Here, we utilise a microcavity quantum battery as an experimental platform that superextensively captures light energy and converts it to an electric current via the incorporation of charge transport layers into the resonant microcavity. This architecture enables, for the first time, a complete quantum battery charge-discharge cycle. We demonstrate that strong light-matter coupling induced by the microcavity leads to superextensive scaling of the steady-state electrical discharging power under low-intensity, incoherent illumination. Our results provide the first experimental demonstration of superextensive light-to-charge conversion in steady-state, highlighting the feasibility of leveraging strong light-matter coupling for enhanced energy harvesting under low-light conditions.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"234 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147439370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-12DOI: 10.1038/s41377-026-02194-9
Kang Li, Guofeng Yan, Kangrui Wang, Chengkun Cai, Min Yang, Guangze Wu, Weike Zhao, Yingying Peng, Yaocheng Shi, Daoxin Dai, Jian Wang
Optical communications have emerged as a promising solution for high-speed modern communication systems and built an important infrastructure for the global information superhighway. Although recent efforts to enhance optical communications have penetrated from long-distance fiber-optic to ultra-short-reach chip-scale data transmission, “Trans-Scale” high-capacity data transmission remains great challenges. In addition to data transmission, data processing is also of great importance for flexible data management in optical communication systems. However, a “Digital Divide” (capacity gap) exists between high-capacity data transmission in fiber links and low-speed data processing at network nodes, hindering the flourishing development of optical communications. Here, we implement “Trans-Scale” high-capacity bridging between few-mode fiber and silicon multimode waveguide using a diverse hybrid integrated coupler, which includes a 3D silica fs-laser direct writing photonic chip and a 2D silicon photonic integrated circuit. On this basis, we leverage a large-scale silicon reconfigurable optical add-drop multiplexer (ROADM) with over 2000 elements to construct a multi-dimensional fiber-chip system, enabling 192-channel (3 modes, 2 polarizations, 32 wavelengths) and 20-Tbit/s trans-scale multi-dimensional data transmission and processing. This demonstration provides a superior trans-scale architecture for multi-dimensional data transmission and processing in next-generation optical communications.
{"title":"Harnessing diverse hybrid integration for bridging trans-scale multi-dimensional fiber-chip data transmission and processing","authors":"Kang Li, Guofeng Yan, Kangrui Wang, Chengkun Cai, Min Yang, Guangze Wu, Weike Zhao, Yingying Peng, Yaocheng Shi, Daoxin Dai, Jian Wang","doi":"10.1038/s41377-026-02194-9","DOIUrl":"https://doi.org/10.1038/s41377-026-02194-9","url":null,"abstract":"Optical communications have emerged as a promising solution for high-speed modern communication systems and built an important infrastructure for the global information superhighway. Although recent efforts to enhance optical communications have penetrated from long-distance fiber-optic to ultra-short-reach chip-scale data transmission, “Trans-Scale” high-capacity data transmission remains great challenges. In addition to data transmission, data processing is also of great importance for flexible data management in optical communication systems. However, a “Digital Divide” (capacity gap) exists between high-capacity data transmission in fiber links and low-speed data processing at network nodes, hindering the flourishing development of optical communications. Here, we implement “Trans-Scale” high-capacity bridging between few-mode fiber and silicon multimode waveguide using a diverse hybrid integrated coupler, which includes a 3D silica fs-laser direct writing photonic chip and a 2D silicon photonic integrated circuit. On this basis, we leverage a large-scale silicon reconfigurable optical add-drop multiplexer (ROADM) with over 2000 elements to construct a multi-dimensional fiber-chip system, enabling 192-channel (3 modes, 2 polarizations, 32 wavelengths) and 20-Tbit/s trans-scale multi-dimensional data transmission and processing. This demonstration provides a superior trans-scale architecture for multi-dimensional data transmission and processing in next-generation optical communications.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"196 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147394036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The advancement of nanophotonic devices is significantly dependent on achieving high-precision inverse design capabilities, which are critical for identifying optimal structural configurations that enable enhanced and multifunctional performances. The process of inverse design confronts a one-to-many relationship due to the complex mapping between optical performance and structure. Though several approaches, including tandem networks, mixture density networks (MDN), and conditional generative adversarial networks, have shown promising outcomes, they still face accuracy limitations when confronted with structures with higher degrees of freedom. Here, we propose a sampling-enhanced MDN called a mixture probability sampling network (MPSN), that outputs mixture Gaussian distributions (MGDs) of structural parameters through an end-to-end framework. The results of multiple samples drawn from the MGDs are fed into a pre-trained network, and the sample that minimizes the error relative to the real data is selected for network training. We benchmark the high performance in nanophotonics through the structural color design, achieving a high precision of up to 99.9% and a mean absolute error of less than 0.002. This work paves the way for resolving intricate inverse design problems in nanophotonics.
{"title":"Ultraprecision, high-capacity, and wide-gamut structural colors enabled by a mixture probability sampling network.","authors":"Zeyong Wei,Weijie Xu,Siyu Dong,Xiaojia Liang,Jingyuan Zhu,Hui Zhang,Kaixuan Li,Lei Jin,Zhanshan Wang,Yuzhi Shi,Gang Yan,Cheng-Wei Qiu,Xinbin Cheng","doi":"10.1038/s41377-025-02122-3","DOIUrl":"https://doi.org/10.1038/s41377-025-02122-3","url":null,"abstract":"The advancement of nanophotonic devices is significantly dependent on achieving high-precision inverse design capabilities, which are critical for identifying optimal structural configurations that enable enhanced and multifunctional performances. The process of inverse design confronts a one-to-many relationship due to the complex mapping between optical performance and structure. Though several approaches, including tandem networks, mixture density networks (MDN), and conditional generative adversarial networks, have shown promising outcomes, they still face accuracy limitations when confronted with structures with higher degrees of freedom. Here, we propose a sampling-enhanced MDN called a mixture probability sampling network (MPSN), that outputs mixture Gaussian distributions (MGDs) of structural parameters through an end-to-end framework. The results of multiple samples drawn from the MGDs are fed into a pre-trained network, and the sample that minimizes the error relative to the real data is selected for network training. We benchmark the high performance in nanophotonics through the structural color design, achieving a high precision of up to 99.9% and a mean absolute error of less than 0.002. This work paves the way for resolving intricate inverse design problems in nanophotonics.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147383549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-11DOI: 10.1038/s41377-026-02200-0
Qing-Xin Ji, Hanfei Hou, Jinhao Ge, Yan Yu, Maodong Gao, Warren Jin, Joel Guo, Lue Wu, Peng Liu, Avi Feshali, Mario Paniccia, John Bowers, Kerry Vahala
In microcombs, solitons can drive non-soliton-forming modes to induce optical gain. Under specific conditions, a regenerative secondary temporal pulse coinciding in time and space with the exciting soliton pulse will form at a new spectral location. A mechanism involving Kerr-induced pulse interactions has been proposed theoretically, leading to multicolor solitons containing constituent phase-locked pulses. However, the occurrence of this phenomenon requires dispersion conditions that are not naturally satisfied in conventional optical microresonators. Here, we report the experimental observation of multicolor pulses from a single optical pump in a way that is closely related to the concept of multicolor solitons. The individual soliton pulses share the same repetition rate and could potentially be fully phase-locked. They are generated using interband coupling in a compound resonator.
{"title":"Multicolor interband solitons in microcombs","authors":"Qing-Xin Ji, Hanfei Hou, Jinhao Ge, Yan Yu, Maodong Gao, Warren Jin, Joel Guo, Lue Wu, Peng Liu, Avi Feshali, Mario Paniccia, John Bowers, Kerry Vahala","doi":"10.1038/s41377-026-02200-0","DOIUrl":"https://doi.org/10.1038/s41377-026-02200-0","url":null,"abstract":"In microcombs, solitons can drive non-soliton-forming modes to induce optical gain. Under specific conditions, a regenerative secondary temporal pulse coinciding in time and space with the exciting soliton pulse will form at a new spectral location. A mechanism involving Kerr-induced pulse interactions has been proposed theoretically, leading to multicolor solitons containing constituent phase-locked pulses. However, the occurrence of this phenomenon requires dispersion conditions that are not naturally satisfied in conventional optical microresonators. Here, we report the experimental observation of multicolor pulses from a single optical pump in a way that is closely related to the concept of multicolor solitons. The individual soliton pulses share the same repetition rate and could potentially be fully phase-locked. They are generated using interband coupling in a compound resonator.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147394086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The integration of crystallographic control into solution-processed perovskite films remains a challenge for efficient light emission, as disordered optical dipoles fundamentally limit photon extraction, a bottleneck constraining both classical and quantum planar optoelectronic devices. Here, we address this by developing an in situ formation strategy for oriented quasi-2D perovskite nanosheets within films via ligand-engineered crystallization. By designing and orchestrating steric hindrance and π-π interactions of ligands, we direct the crystallization kinetics to yield regular face-on nanosheets exhibiting enhanced horizontal transition dipole moment orientation compared to conventional isotropic films. The in situ architectural control also elevates both the photoluminescence quantum yield beyond 90% and carrier mobility comparable to 3D perovskite levels. These synergies enable perovskite light-emitting diodes (PeLEDs) with an external quantum efficiency (EQE) of 31.2% for pure-red emission at 635 nm, comparing favorably to other pure-red PeLEDs. Concurrently, the peak luminance and operational stability of the in situ nanosheet PeLEDs exhibit significant improvements.
{"title":"In-situ formation of oriented perovskite nanosheets with tailored optical dipoles enabling >30% EQE in pure-red LEDs.","authors":"Shaowei Liu,Dezhong Zhang,Lei Wang,Binhe Li,Wei Yuan,Ziheng Xiong,Kai Chen,Helong Zhu,Wenping Wu,Shuang Li,Liu Yang,Yunzhuo Liu,Hongmei Zhan,Chuanli Qin,Jiaqi Zhang,Jun Liu,Lixiang Wang,Chuanjiang Qin","doi":"10.1038/s41377-026-02184-x","DOIUrl":"https://doi.org/10.1038/s41377-026-02184-x","url":null,"abstract":"The integration of crystallographic control into solution-processed perovskite films remains a challenge for efficient light emission, as disordered optical dipoles fundamentally limit photon extraction, a bottleneck constraining both classical and quantum planar optoelectronic devices. Here, we address this by developing an in situ formation strategy for oriented quasi-2D perovskite nanosheets within films via ligand-engineered crystallization. By designing and orchestrating steric hindrance and π-π interactions of ligands, we direct the crystallization kinetics to yield regular face-on nanosheets exhibiting enhanced horizontal transition dipole moment orientation compared to conventional isotropic films. The in situ architectural control also elevates both the photoluminescence quantum yield beyond 90% and carrier mobility comparable to 3D perovskite levels. These synergies enable perovskite light-emitting diodes (PeLEDs) with an external quantum efficiency (EQE) of 31.2% for pure-red emission at 635 nm, comparing favorably to other pure-red PeLEDs. Concurrently, the peak luminance and operational stability of the in situ nanosheet PeLEDs exhibit significant improvements.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"67 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147383550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Artificial Intelligence models pose serious challenges to intensive computing and high-bandwidth communication for conventional electronic circuit-based computing clusters. Silicon photonic technologies, due to their high speed, low latency, large bandwidth, and complementary metal-oxide-semiconductor compatibility, have been widely implemented for data transmission and actively explored as photonic neural networks in AI clusters. However, current silicon photonic integrated chips lack adaptability for multifunctional use and hardware-software systematic coordination, which is adverse to the development of photo-electronic AI clusters. Here, we develop a reconfigurable silicon photonic chip with 40 programmable unit cells integrating over 160 components, which, to the best of our knowledge, is the first to realize diverse functions for AI clusters with a chip, from computing acceleration and signal processing to network switching and secure encryption. Using a self-developed testing, compilation, and adjustment framework to the chip without in-chip monitoring photodetectors, we have demonstrated (1) 4 × 4 bi-direction unitary and 3 × 3 uni-direction non-unitary matrix multiplications, achieving a speed of over 1.92 TOPS with 6.22-bit precision and energy efficiency of 1.875 pJ MAC-1, and neural networks for image recognition with a latency of 260 ps; (2) micro-ring modulator wavelength locking in the 5 to 32 Gb s-1 transmission systems; (3) 4 × 4 photonic channel switching with low to -44 dB inter-channel crosstalk; (4) silicon photonic physical unclonable functions. This optoelectronic processing system, incorporating the photonic chip and its software stack, paves the way for both advanced photonic system-on-chip design and the construction of photo-electronic AI clusters.
{"title":"LightIN: a versatile silicon-integrated photonic field programmable gate array with an intelligent configuration framework for next-generation AI clusters.","authors":"Ying Zhu,Yifan Liu,Xinyu Yang,Kailai Liu,Xin Hua,Ming Luo,Jia Liu,Siyao Chang,Jie Yan,Shengxiang Zhang,Miao Wu,Zhicheng Wang,Hongguang Zhang,Dong Wang,Daigao Chen,Xi Xiao,Shaohua Yu","doi":"10.1038/s41377-026-02209-5","DOIUrl":"https://doi.org/10.1038/s41377-026-02209-5","url":null,"abstract":"Artificial Intelligence models pose serious challenges to intensive computing and high-bandwidth communication for conventional electronic circuit-based computing clusters. Silicon photonic technologies, due to their high speed, low latency, large bandwidth, and complementary metal-oxide-semiconductor compatibility, have been widely implemented for data transmission and actively explored as photonic neural networks in AI clusters. However, current silicon photonic integrated chips lack adaptability for multifunctional use and hardware-software systematic coordination, which is adverse to the development of photo-electronic AI clusters. Here, we develop a reconfigurable silicon photonic chip with 40 programmable unit cells integrating over 160 components, which, to the best of our knowledge, is the first to realize diverse functions for AI clusters with a chip, from computing acceleration and signal processing to network switching and secure encryption. Using a self-developed testing, compilation, and adjustment framework to the chip without in-chip monitoring photodetectors, we have demonstrated (1) 4 × 4 bi-direction unitary and 3 × 3 uni-direction non-unitary matrix multiplications, achieving a speed of over 1.92 TOPS with 6.22-bit precision and energy efficiency of 1.875 pJ MAC-1, and neural networks for image recognition with a latency of 260 ps; (2) micro-ring modulator wavelength locking in the 5 to 32 Gb s-1 transmission systems; (3) 4 × 4 photonic channel switching with low to -44 dB inter-channel crosstalk; (4) silicon photonic physical unclonable functions. This optoelectronic processing system, incorporating the photonic chip and its software stack, paves the way for both advanced photonic system-on-chip design and the construction of photo-electronic AI clusters.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"76 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147393967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we have made ultraviolet (UV) light visible by proposing and fabricating an integrated optoelectronic device. The demonstrated device consists of a GaN-based blue mini-light-emitting diode (mini-LED) and a phototransistor. The phototransistor is specially designed with an Al0.20Ga0.80N polarization gate. The background electrons can be depleted by the polarization gate to enable the normally-off state for the integrated optoelectronic device when there is no UV illumination. Our measured results show that when the polarization-gated phototransistor is switched off, the current for the integrated optoelectronic device is as low as 1.4 × 10−4 mA even when the device is biased to 10 V. Upon the 12.7 mW UV excitation, the current for the integrated device can be increased to 44.4 mA at the bias of 10.0 V. This enables the GaN-based visible mini-LED to generate the optical power of 81.1 mW. The largest power ratio between the UV excitation light and the mini-LED light of 49.8 times can be achieved, indicating the advantage of monitoring weak UV light by using the proposed design.
{"title":"Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission","authors":"Chunshuang Chu, Yao Jiang, Conglin He, Wenjie Li, Kangkai Tian, Yonghui Zhang, Xiaowei Sun, Zi-Hui Zhang","doi":"10.1038/s41377-026-02242-4","DOIUrl":"https://doi.org/10.1038/s41377-026-02242-4","url":null,"abstract":"In this work, we have made ultraviolet (UV) light visible by proposing and fabricating an integrated optoelectronic device. The demonstrated device consists of a GaN-based blue mini-light-emitting diode (mini-LED) and a phototransistor. The phototransistor is specially designed with an Al0.20Ga0.80N polarization gate. The background electrons can be depleted by the polarization gate to enable the normally-off state for the integrated optoelectronic device when there is no UV illumination. Our measured results show that when the polarization-gated phototransistor is switched off, the current for the integrated optoelectronic device is as low as 1.4 × 10−4 mA even when the device is biased to 10 V. Upon the 12.7 mW UV excitation, the current for the integrated device can be increased to 44.4 mA at the bias of 10.0 V. This enables the GaN-based visible mini-LED to generate the optical power of 81.1 mW. The largest power ratio between the UV excitation light and the mini-LED light of 49.8 times can be achieved, indicating the advantage of monitoring weak UV light by using the proposed design.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"91 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147381712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-10DOI: 10.1038/s41377-026-02230-8
Zhicheng Zhang, Wenbo Zhan, Yao Xiao, Chen Luo, Hao Zhou, Wenfan Yang, Yang Cheng, Hao Yu, Quanling Li, Xiao Li, Chaofan Zhang, Jun Wang
High-brightness yellow lasers are in high demand for applications such as atomic cooling and trapping, optogenetics, and sodium laser guide stars. Herein, we demonstrate the potential of Metal-Organic Chemical Vapor Deposition (MOCVD) for the rapid mass production of high-strain 1.2 μm InGaAs quantum well vertical external cavity surface emitting lasers (VECSELs). Two distinct growth strategies were explored, with a primary focus on enhancing crystal thermal stability and mitigating indium segregation. The as-grown gain chips achieved over 45 W of output power and a slope efficiency exceeding 50%. Furthermore, we verified the feasibility of generating yellow second harmonic generation (SHG), attaining a 590 nm CW power of ~6.2 W with a slope efficiency of 17%. The beam quality factor (M²) was <1.1, approaching diffraction-limited performance, corresponding to a brightness of ~1.65 GW cm−2 sr−1. Overall, these investigations not only expand the performance envelope of MOCVD-grown semiconductor lasers but also deepen the understanding of indium segregation behaviors.
{"title":"Over 1.65 GW cm−2 sr−1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL","authors":"Zhicheng Zhang, Wenbo Zhan, Yao Xiao, Chen Luo, Hao Zhou, Wenfan Yang, Yang Cheng, Hao Yu, Quanling Li, Xiao Li, Chaofan Zhang, Jun Wang","doi":"10.1038/s41377-026-02230-8","DOIUrl":"https://doi.org/10.1038/s41377-026-02230-8","url":null,"abstract":"High-brightness yellow lasers are in high demand for applications such as atomic cooling and trapping, optogenetics, and sodium laser guide stars. Herein, we demonstrate the potential of Metal-Organic Chemical Vapor Deposition (MOCVD) for the rapid mass production of high-strain 1.2 μm InGaAs quantum well vertical external cavity surface emitting lasers (VECSELs). Two distinct growth strategies were explored, with a primary focus on enhancing crystal thermal stability and mitigating indium segregation. The as-grown gain chips achieved over 45 W of output power and a slope efficiency exceeding 50%. Furthermore, we verified the feasibility of generating yellow second harmonic generation (SHG), attaining a 590 nm CW power of ~6.2 W with a slope efficiency of 17%. The beam quality factor (M²) was <1.1, approaching diffraction-limited performance, corresponding to a brightness of ~1.65 GW cm−2 sr−1. Overall, these investigations not only expand the performance envelope of MOCVD-grown semiconductor lasers but also deepen the understanding of indium segregation behaviors.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147381708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Upconversion detection of infrared radiation by cost-effective silicon photodetectors in visible bands has spurred a revolution in infrared imaging technology, unlocking a wide range of applications in biological imaging, optical spectroscopy, and optical data storage. Despite significant progress in upconversion detection, real-time, concurrent, complex-amplitude imaging of both phase and amplitude information, indispensable for disclosing the full signature of infrared scenes, remains a daunting challenge, impeding their widespread applications. By integrating the unique advantages of both coherent and incoherent approaches, we propose the concept of upconversion optical entropy encoding and demonstrate a video-rate infrared complex-amplitude imaging system. This is achieved by leveraging the synergistic interaction between light scattering in disordered photonic structures and lanthanide upconversion photoluminescence. By tailoring the information entropy of upconversion speckles, infrared light-field information can be captured in a single visible snapshot and explicitly reconstructed, assisted by a deep learning network, enabling infrared complex-amplitude imaging at a video rate of 25 frames per second (fps) and with high-fidelity 8-bit grayscale modulation. The high photosensitivity of the developed infrared imaging system enables a power detection limit of 0.2 nW μm-2, three orders of magnitude lower than that of conventional parametric upconversion imaging. As a proof of concept, we demonstrate its applications in capturing video frames of natural scene images and classifying images of speed-limit signs for autonomous driving. This approach can be readily integrated with other cross-band imaging methods, paving the way for various infrared application scenarios that require video-rate, high-photosensitivity, and high-fidelity protocols.
{"title":"Upconversion optical entropy encoding for infrared complex-amplitude imaging.","authors":"Sheng-Ke Zhu,Tuqiang Pan,Chao-Xian Tang,Ai-Hua Li,Ze-Huan Zheng,Yi Xu,Xiangping Li,Jin-Hui Chen","doi":"10.1038/s41377-026-02215-7","DOIUrl":"https://doi.org/10.1038/s41377-026-02215-7","url":null,"abstract":"Upconversion detection of infrared radiation by cost-effective silicon photodetectors in visible bands has spurred a revolution in infrared imaging technology, unlocking a wide range of applications in biological imaging, optical spectroscopy, and optical data storage. Despite significant progress in upconversion detection, real-time, concurrent, complex-amplitude imaging of both phase and amplitude information, indispensable for disclosing the full signature of infrared scenes, remains a daunting challenge, impeding their widespread applications. By integrating the unique advantages of both coherent and incoherent approaches, we propose the concept of upconversion optical entropy encoding and demonstrate a video-rate infrared complex-amplitude imaging system. This is achieved by leveraging the synergistic interaction between light scattering in disordered photonic structures and lanthanide upconversion photoluminescence. By tailoring the information entropy of upconversion speckles, infrared light-field information can be captured in a single visible snapshot and explicitly reconstructed, assisted by a deep learning network, enabling infrared complex-amplitude imaging at a video rate of 25 frames per second (fps) and with high-fidelity 8-bit grayscale modulation. The high photosensitivity of the developed infrared imaging system enables a power detection limit of 0.2 nW μm-2, three orders of magnitude lower than that of conventional parametric upconversion imaging. As a proof of concept, we demonstrate its applications in capturing video frames of natural scene images and classifying images of speed-limit signs for autonomous driving. This approach can be readily integrated with other cross-band imaging methods, paving the way for various infrared application scenarios that require video-rate, high-photosensitivity, and high-fidelity protocols.","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"56 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147374142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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