The reflection-type bound states in the continuum (BICs) within the metastructure-photonic crystals (MPCs) architecture are realized by precisely engineering the excitation conditions of guided modes. Leveraging ultrahigh-quality factor (Q factor) quasi-BICs, giant bidirectional Goos-Hänchen (GH) shifts are achieved. While a magnification of four orders of magnitude relative to the operational wavelength (λ0) is attainable within the standard detection range, our approach allows for precise technical tuning to achieve even greater enhancement up to five orders of magnitude as needed, far surpassing the performance of existing enhancement mechanisms. Critically, these quasi-BIC-mediated GH shifts are occurred at reflection peaks with near-unity amplitudes, ensuring experimental detectability without requiring sophisticated signal recovery techniques. Beyond this fundamental advancement, the rapid advancement of the photovoltaic sector has intensified demand for high-performance solar cells, where organic semiconductor polymers serve as critical enablers due to their tunable optoelectronic properties and processability. By leveraging the refractive index sensitivity of GH shifts, an organic semiconductor polymer sensor was engineered, demonstrating ultrahigh sensitivity (−9.57 × 104 λ0/RIU), quantifying the differential GH shifts variation rate per refractive index unit (RIU) ultra-wide and continuous detection range (n = 1.7 ∼ 2.3), and high resolution (Δnmin = 0.00001). This system enables precise identification of polymer compositions by correlating GH shifts magnitudes with dielectric permittivity gradients, thereby providing a powerful tool for material characterization in next-generation optoelectronic devices.
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