2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat最新文献
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913090
M. G. Noppe
The characterization of amplification is defined: /spl eta/ specific amplification coefficient. Suggested Maxwell's equations for amplifying medium are used for derivation of amplitude condition of stationary generation for non-linear laser model and for derivation of system of equations for generation frequency and mode attenuation parameter. These equations are used for simulation of experiment series.
{"title":"Maxwell's equations for amplifying medium and their application for laser analysis","authors":"M. G. Noppe","doi":"10.1109/APEIE.2000.913090","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913090","url":null,"abstract":"The characterization of amplification is defined: /spl eta/ specific amplification coefficient. Suggested Maxwell's equations for amplifying medium are used for derivation of amplitude condition of stationary generation for non-linear laser model and for derivation of system of equations for generation frequency and mode attenuation parameter. These equations are used for simulation of experiment series.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128527919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913124
S. Ilinykh, I.D. Mitzenko
The process of detection of signals in a photoreceiving channel is connected to a series of particular phenomena of transient occurrence in a slugged link of a photodetector. In view of these phenomena, the problems of quasi-optimal selection of parameters of the channel are estimated.
{"title":"Particular features of signal reception in a photoreceiving channel","authors":"S. Ilinykh, I.D. Mitzenko","doi":"10.1109/APEIE.2000.913124","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913124","url":null,"abstract":"The process of detection of signals in a photoreceiving channel is connected to a series of particular phenomena of transient occurrence in a slugged link of a photodetector. In view of these phenomena, the problems of quasi-optimal selection of parameters of the channel are estimated.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122371970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913133
K.E. Afanasev, M. Simonov, V. E. Shuvalov
Realization of restoration algorithms of two-dimensional input signals operating in the entry of the dynamic system is suggested as two-dimensional inversion filters which characteristics are determined by the methods of regulation by A.N. Tikhonov. Using the structural analysis of this method, the requirements on the parameters of the inversion filter is specified and their influence on its dynamic characteristics is investigated.
{"title":"Inverse filtration of two-dimensional signals on basis of the regulation method by A.N. Tikhonov (the structural approach)","authors":"K.E. Afanasev, M. Simonov, V. E. Shuvalov","doi":"10.1109/APEIE.2000.913133","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913133","url":null,"abstract":"Realization of restoration algorithms of two-dimensional input signals operating in the entry of the dynamic system is suggested as two-dimensional inversion filters which characteristics are determined by the methods of regulation by A.N. Tikhonov. Using the structural analysis of this method, the requirements on the parameters of the inversion filter is specified and their influence on its dynamic characteristics is investigated.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129217409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913122
A. Sorkin
To increase the steepness of slopes of frequency response of waveguide filters with /spl lambda//4 coupling as resonant tanks, it is possible to use multiresonance diaphragms. A broad spectrum of the highest evanescent types of waves is launched on such diaphragms. For an isolation on the highest modes the additional resonance diaphragms with low-loaded Q-factor are fixed between resonant diaphragms. An example of such a five-section filter on multiresonance is shown.
{"title":"Waveguide filter on multiresonant diaphragms","authors":"A. Sorkin","doi":"10.1109/APEIE.2000.913122","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913122","url":null,"abstract":"To increase the steepness of slopes of frequency response of waveguide filters with /spl lambda//4 coupling as resonant tanks, it is possible to use multiresonance diaphragms. A broad spectrum of the highest evanescent types of waves is launched on such diaphragms. For an isolation on the highest modes the additional resonance diaphragms with low-loaded Q-factor are fixed between resonant diaphragms. An example of such a five-section filter on multiresonance is shown.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115291651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913102
V. Kononov
The computerised analysis of the procedure of identification of discrete rational transfer function order, at reconstruction by noisy impulse response estimation, is submitted. The procedure of order identification is reduced to the analysis of population values of a specific functional shaped by impulse response estimation. The results testify to a high enough performance of the investigated functional.
{"title":"Transfer function order identification on impulse response estimation","authors":"V. Kononov","doi":"10.1109/APEIE.2000.913102","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913102","url":null,"abstract":"The computerised analysis of the procedure of identification of discrete rational transfer function order, at reconstruction by noisy impulse response estimation, is submitted. The procedure of order identification is reduced to the analysis of population values of a specific functional shaped by impulse response estimation. The results testify to a high enough performance of the investigated functional.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132515256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913128
B. Kapilevich, R. Lukjanets
The paper presents a novel high-Q microwave tuned active bandpass filter using varactor diodes for tuning and a BJT to compensate for losses. The experimental filter with stepped resonator circuits and special coupling elements have been fabricated and tested demonstrating a good agreement with the circuit model predictions. Tuning range of 400 MHz for the active filter is achieved with the centre frequency of 1.6 GHz. A 3 dB bandwidth of 50 MHz is obtained and passband gain is typically 0.5-1.0 dB in the whole tuning range.
{"title":"High-Q tuned active bandpass filter for wireless application","authors":"B. Kapilevich, R. Lukjanets","doi":"10.1109/APEIE.2000.913128","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913128","url":null,"abstract":"The paper presents a novel high-Q microwave tuned active bandpass filter using varactor diodes for tuning and a BJT to compensate for losses. The experimental filter with stepped resonator circuits and special coupling elements have been fabricated and tested demonstrating a good agreement with the circuit model predictions. Tuning range of 400 MHz for the active filter is achieved with the centre frequency of 1.6 GHz. A 3 dB bandwidth of 50 MHz is obtained and passband gain is typically 0.5-1.0 dB in the whole tuning range.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131063271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913077
V. P. Dragunov, D. Boldyrev
A theoretical calculation of the low-field mobility and piezoresistance coefficients of holes in germanium and silicon is carried out incorporating all relevant details of the band structure. The scattering have been limited to acoustic and optical phonons and ionized-impurity and is described by the deformation potentials a, b, d and d/sub 0/. Values of the piezoresistance coefficients are calculated using matrix 6/spl times/6 expressions for the strain dependent energy-wave vector relations of the valence bands and the known deformation potentials. The calculated values of the first-order piezoresistance coefficients are found to agree fairly well with the experimental data.
{"title":"Low-field mobility and piezoresistivity of holes in germanium and silicon","authors":"V. P. Dragunov, D. Boldyrev","doi":"10.1109/APEIE.2000.913077","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913077","url":null,"abstract":"A theoretical calculation of the low-field mobility and piezoresistance coefficients of holes in germanium and silicon is carried out incorporating all relevant details of the band structure. The scattering have been limited to acoustic and optical phonons and ionized-impurity and is described by the deformation potentials a, b, d and d/sub 0/. Values of the piezoresistance coefficients are calculated using matrix 6/spl times/6 expressions for the strain dependent energy-wave vector relations of the valence bands and the known deformation potentials. The calculated values of the first-order piezoresistance coefficients are found to agree fairly well with the experimental data.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132745184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913074
A. A. Kornilovich
In this paper the investigation of the quantum effects in semiconductors by the contactless magneto-optical and microwave methods are presented. Studies of the dependence of the optical and microwave Shubnikov-de Haas (SdH) effect on magnetic field have been carried out to determine the transport and energetic parameters in semiconductors such as InSb, Cd/sub x/Hg/sub 1-x/Te and two-dimensional systems (2DS) such GaAs/Al/sub x/Ga/sub 1-x/As in the observation of this effect in the transmission and reflectivity of the probing radiation. The nonlinear spin resonance raised in n-InSb due to stimulated combinational light scattering method (LSCS) with the signal amplification is considered.
{"title":"Investigation of semiconductors and low-dimensional systems by magneto-optical and microwave methods","authors":"A. A. Kornilovich","doi":"10.1109/APEIE.2000.913074","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913074","url":null,"abstract":"In this paper the investigation of the quantum effects in semiconductors by the contactless magneto-optical and microwave methods are presented. Studies of the dependence of the optical and microwave Shubnikov-de Haas (SdH) effect on magnetic field have been carried out to determine the transport and energetic parameters in semiconductors such as InSb, Cd/sub x/Hg/sub 1-x/Te and two-dimensional systems (2DS) such GaAs/Al/sub x/Ga/sub 1-x/As in the observation of this effect in the transmission and reflectivity of the probing radiation. The nonlinear spin resonance raised in n-InSb due to stimulated combinational light scattering method (LSCS) with the signal amplification is considered.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131136948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913112
G. Ayzenshtat, A.V. Khan, O. Tolbanov, D. Mokeev
An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis.
{"title":"An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element","authors":"G. Ayzenshtat, A.V. Khan, O. Tolbanov, D. Mokeev","doi":"10.1109/APEIE.2000.913112","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913112","url":null,"abstract":"An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127227457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913076
V. P. Dragunov, V.N. Kholyavko
Experimental results on the magnetoresistance in p-type inversion channels on the [111] silicon surface are presented. Experiments were conducted at temperature of 4.2 /spl deg/K, magnetic field magnitudes of up to 3 Tesla and gate voltages on the MOS-structures generating hole concentration of /spl Gamma//sub p//spl cong/10/sup 13/ cm/sup -2/ in inversion channel. Having compared theory with the experimental results for B/sub /spl perp// we have obtained that (0.5+/spl beta/)/spl cong/0.501, L/sub /spl phi///spl cong/6.1/spl middot/10/sup -8/ m, L/sub /spl phi///sup *//spl cong/4.8/spl middot/10/sup -9/ m, /spl tau//sub /spl phi////spl tau//sub /spl phi///sup *//spl cong/80. In the case of B/sub /spl par// have obtained that up to B/sub /spl par//=2 T, /spl tau//sub /spl phi////spl tau//sub B/spl par//spl caron///spl ap/0.6/spl middot/B/sup 2/ and /spl tau//sub /spl phi///sup *///spl tau//sub B/spl par//spl caron///spl ap/20.
{"title":"Weak localization in p-type inversion channels on silicon","authors":"V. P. Dragunov, V.N. Kholyavko","doi":"10.1109/APEIE.2000.913076","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913076","url":null,"abstract":"Experimental results on the magnetoresistance in p-type inversion channels on the [111] silicon surface are presented. Experiments were conducted at temperature of 4.2 /spl deg/K, magnetic field magnitudes of up to 3 Tesla and gate voltages on the MOS-structures generating hole concentration of /spl Gamma//sub p//spl cong/10/sup 13/ cm/sup -2/ in inversion channel. Having compared theory with the experimental results for B/sub /spl perp// we have obtained that (0.5+/spl beta/)/spl cong/0.501, L/sub /spl phi///spl cong/6.1/spl middot/10/sup -8/ m, L/sub /spl phi///sup *//spl cong/4.8/spl middot/10/sup -9/ m, /spl tau//sub /spl phi////spl tau//sub /spl phi///sup *//spl cong/80. In the case of B/sub /spl par// have obtained that up to B/sub /spl par//=2 T, /spl tau//sub /spl phi////spl tau//sub B/spl par//spl caron///spl ap/0.6/spl middot/B/sup 2/ and /spl tau//sub /spl phi///sup *///spl tau//sub B/spl par//spl caron///spl ap/20.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129813033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat
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