2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat最新文献
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913132
M. Orlova
A possibility of mutual active jamming compensation in complex location systems is considered. An adaptive signal processing algorithm in a priori indetermination conditions is proposed. This algorithm implies the evaluation of jamming spectral density and interchannel jamming correlation coefficients and the removal of carrier frequency difference in the channels.
{"title":"Active jamming compensation in complex location systems","authors":"M. Orlova","doi":"10.1109/APEIE.2000.913132","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913132","url":null,"abstract":"A possibility of mutual active jamming compensation in complex location systems is considered. An adaptive signal processing algorithm in a priori indetermination conditions is proposed. This algorithm implies the evaluation of jamming spectral density and interchannel jamming correlation coefficients and the removal of carrier frequency difference in the channels.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116332315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913101
N. Filimonov
Questions of polyhedral norms design with the use of gauge functions of Minkowski, and their application for discrete processes research, are discussed.
讨论了利用闵可夫斯基规范函数设计多面体范数的问题及其在离散过程研究中的应用。
{"title":"Polyhedral norms design and their application for discrete processes research","authors":"N. Filimonov","doi":"10.1109/APEIE.2000.913101","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913101","url":null,"abstract":"Questions of polyhedral norms design with the use of gauge functions of Minkowski, and their application for discrete processes research, are discussed.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132662794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913093
P.E. Berezhnaja, M. Stupak
Physical and technical characteristics and possibilities of express, nondestructive, compatible with the existent technologies, computerized setup for ex-situ second harmonic generation diagnostics of crystal quality of semiconductor and dielectric plates and films without the center of symmetry (GaAs, CdTe, SBN) are presented. Brief characteristics of similar laboratory installation for in-situ express second harmonic generation diagnostics of semiconductor films crystal quality are given. The "ex-situ" setup is able to define the axes orientation with the accuracy about 0,1 degree by the analysis of the SH intensity dependence versus laser light polarization rotation with the space resolution up to 40 microns, operation time about 1 minute. It produces simultaneously the map of surface layer crystal quality distributions and the map of volume crystal and optical quality distributions. By this operation the thickness of studied surface layer 0,1-1 micron, the size of scanned area from 0,5/sup */0,5 mm/sup 2/ up to 60/sup */60 mm/sup 2/, number of map elements 100/sup */100, space resolution up to 40 microns, time of maps generation about 15 minutes. The demonstrated possibilities of SH testing of GaAs, CdTe, SBN quality give a chance to have convenient, express and technological tool for the laboratory and factory output inspection.
{"title":"Application of second harmonic generation to express local monitoring of semiconductor and dielectric crystal parameters","authors":"P.E. Berezhnaja, M. Stupak","doi":"10.1109/APEIE.2000.913093","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913093","url":null,"abstract":"Physical and technical characteristics and possibilities of express, nondestructive, compatible with the existent technologies, computerized setup for ex-situ second harmonic generation diagnostics of crystal quality of semiconductor and dielectric plates and films without the center of symmetry (GaAs, CdTe, SBN) are presented. Brief characteristics of similar laboratory installation for in-situ express second harmonic generation diagnostics of semiconductor films crystal quality are given. The \"ex-situ\" setup is able to define the axes orientation with the accuracy about 0,1 degree by the analysis of the SH intensity dependence versus laser light polarization rotation with the space resolution up to 40 microns, operation time about 1 minute. It produces simultaneously the map of surface layer crystal quality distributions and the map of volume crystal and optical quality distributions. By this operation the thickness of studied surface layer 0,1-1 micron, the size of scanned area from 0,5/sup */0,5 mm/sup 2/ up to 60/sup */60 mm/sup 2/, number of map elements 100/sup */100, space resolution up to 40 microns, time of maps generation about 15 minutes. The demonstrated possibilities of SH testing of GaAs, CdTe, SBN quality give a chance to have convenient, express and technological tool for the laboratory and factory output inspection.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133113944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913120
Y.M. Mandrik
The 25 kHz 20 kW AC/DC converter has been developed for high-voltage power supplies. The converter is designed with a series resonant H-bridge topology. PWM phase shifted control for power switches based on IC UCC3895 makes available high efficiency and noiseless performance of the power supply. In this converter electrolytic capacitors are absent in the high power circuit.
{"title":"Series resonant full bridge converter with phase shifted controls and quasi-soft switching action of power switches for wide range load changing","authors":"Y.M. Mandrik","doi":"10.1109/APEIE.2000.913120","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913120","url":null,"abstract":"The 25 kHz 20 kW AC/DC converter has been developed for high-voltage power supplies. The converter is designed with a series resonant H-bridge topology. PWM phase shifted control for power switches based on IC UCC3895 makes available high efficiency and noiseless performance of the power supply. In this converter electrolytic capacitors are absent in the high power circuit.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133838788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913075
O. Kibis, M. Makarenko
In a two-dimensional electron gas (2DEG) with asymmetric quantizing potential in the presence of magnetic field parallel to the 2DEG plane due to different interaction between electron system and phonons having mutually opposite directions of wave vectors the anomalous thermomagnetic effect appears. The alternating uniform heating of the crystal lattice results in emergence of alternating electromotive force. The effect is analyzed for interaction between electron system and acoustic phonons (both usual and piezoelectric) in heterojunction GaAs-AlGaAs.
{"title":"Anomalous thermomagnetic effect in semiconductor heterojunctions","authors":"O. Kibis, M. Makarenko","doi":"10.1109/APEIE.2000.913075","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913075","url":null,"abstract":"In a two-dimensional electron gas (2DEG) with asymmetric quantizing potential in the presence of magnetic field parallel to the 2DEG plane due to different interaction between electron system and phonons having mutually opposite directions of wave vectors the anomalous thermomagnetic effect appears. The alternating uniform heating of the crystal lattice results in emergence of alternating electromotive force. The effect is analyzed for interaction between electron system and acoustic phonons (both usual and piezoelectric) in heterojunction GaAs-AlGaAs.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"468 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114585162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913119
A.M. Smekhnov, R. Shreiner, A. A. Efimov
The results of development of the switched reluctance drive control system are presented. The switched reluctance drive control algorithm, without using the shaft position sensor, was developed. The control system with the phase switching off/on angle regulator was synthesized.
{"title":"Switched reluctance drive control system","authors":"A.M. Smekhnov, R. Shreiner, A. A. Efimov","doi":"10.1109/APEIE.2000.913119","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913119","url":null,"abstract":"The results of development of the switched reluctance drive control system are presented. The switched reluctance drive control algorithm, without using the shaft position sensor, was developed. The control system with the phase switching off/on angle regulator was synthesized.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122858358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913091
M. G. Noppe
The formulas for intensity of output radiation from injection semiconductor laser are deduced. Paper shows that saturation effect is insignificant and the basic nonlinear effect in the semiconductor laser is playing a main role. Modeling a series of experiments is carried out.
{"title":"Modeling of experiments on the basis of nonlinear injection semiconductor lasers theory","authors":"M. G. Noppe","doi":"10.1109/APEIE.2000.913091","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913091","url":null,"abstract":"The formulas for intensity of output radiation from injection semiconductor laser are deduced. Paper shows that saturation effect is insignificant and the basic nonlinear effect in the semiconductor laser is playing a main role. Modeling a series of experiments is carried out.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123246976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913089
V. G. Adoniev, S. V. Belavskaya, V.A. Vityugov, Yu.S. Polyakov
The results of experimental investigation of complex ultrasound (US) and microwave (MW) irradiator in hydrogen containing medium are presented. It is shown that during concurrent operation US and MW units do not interfere. Thus, the US and MW units can be examined and adjusted independently.
{"title":"Experimental investigation of complex ultrasound and microwave irradiator","authors":"V. G. Adoniev, S. V. Belavskaya, V.A. Vityugov, Yu.S. Polyakov","doi":"10.1109/APEIE.2000.913089","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913089","url":null,"abstract":"The results of experimental investigation of complex ultrasound (US) and microwave (MW) irradiator in hydrogen containing medium are presented. It is shown that during concurrent operation US and MW units do not interfere. Thus, the US and MW units can be examined and adjusted independently.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"2236 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130195680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913079
V. Nazarov, V. Shchukin, V. Marusin
Constructions of MW PGs and of reactors relevanted have been worked out, modes of ultrafine powders' and films' deposition of some metal nitrides out of their chlorides in nitrogen plasma now under atmosphere pressure have been researched. Process of film's formation has diffusional character, growth rate has been controlled by diffusion transfer of volatile halogenides of metal towards substrate's surface. During its formation the film undergoes the stages of nucleation and growth of nuclei. As the temperature of substrate is less than 1000 K processes of coalescence and of secondary recrystallization in a growing layer being hindered, that have resulted in a sharping decrease of a grain size. Values of deposition rate achieved have been about (10/sup 2/-10/sup 3/) A/s. In case of nitride and oxide temperature regions be separated the films obtained have been monophase and disoxidic ones.
{"title":"Plasma-chemical deposition of nitrides out of halogenides","authors":"V. Nazarov, V. Shchukin, V. Marusin","doi":"10.1109/APEIE.2000.913079","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913079","url":null,"abstract":"Constructions of MW PGs and of reactors relevanted have been worked out, modes of ultrafine powders' and films' deposition of some metal nitrides out of their chlorides in nitrogen plasma now under atmosphere pressure have been researched. Process of film's formation has diffusional character, growth rate has been controlled by diffusion transfer of volatile halogenides of metal towards substrate's surface. During its formation the film undergoes the stages of nucleation and growth of nuclei. As the temperature of substrate is less than 1000 K processes of coalescence and of secondary recrystallization in a growing layer being hindered, that have resulted in a sharping decrease of a grain size. Values of deposition rate achieved have been about (10/sup 2/-10/sup 3/) A/s. In case of nitride and oxide temperature regions be separated the films obtained have been monophase and disoxidic ones.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116778613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/APEIE.2000.913125
V.N. Kostioukov
In operation the method of etalonless diagnostics of machines is offered on the basis of the analysis of vibroacoustic signals bound with unobservable errors of manufacture and operation. The part from errors has no adequate representation in dials of the ratio and intervals. The canonical coupling equation between diagnostic indications of a signal and structural state variables of the machine representing a bisectrix of the first angle of an information plane is deduced (removed), and the outcomes of model operation for a normal distribution are reduced.
{"title":"The etalonless method of vibroacoustic diagnostics","authors":"V.N. Kostioukov","doi":"10.1109/APEIE.2000.913125","DOIUrl":"https://doi.org/10.1109/APEIE.2000.913125","url":null,"abstract":"In operation the method of etalonless diagnostics of machines is offered on the basis of the analysis of vibroacoustic signals bound with unobservable errors of manufacture and operation. The part from errors has no adequate representation in dials of the ratio and intervals. The canonical coupling equation between diagnostic indications of a signal and structural state variables of the machine representing a bisectrix of the first angle of an information plane is deduced (removed), and the outcomes of model operation for a normal distribution are reduced.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"57 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113977195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat
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