A biosensor employing a junctionless TFET (JL-TEFT) to identify different protein molecules is modelled and investigated in this paper. The JLTFET is chosen for designing the biosensor because of its superiority over TFET and JLFET. The biomolecules can be captured in this type of devices by creating cavities across the gate. Various output parameters of label free biosensing with respect to various dielectric constants was studied using TCAD simulator. This article further portrays current and voltage sensitivity. This paper also investigates the fill factor impact of size of biomolecules and cavity positioning on the performance of biosensor. The dielectric modulation method for identifying a range of proteins and amino acids is being investigated through simulations. The sensitivity of JLTFET-based biosensors was found to be 1013. The novelties in this manuscript is that for the first time, an analytical mathematical model of a triple material gate asymmetrical hetero-dielectric JLTFET biosensor has been derived here. The developed model is not having any empirical parameter. Hence the proposed model is faster. Besides exhibiting increased sensitivity when compared to previous FET and TFET-based biosensors, this device also shows its suitability for low-power applications, hence providing a multitude of avenues for future exploration.
{"title":"Simulation and modeling of high-sensitive JL-TFET based biosensor for label free detection of biomolecules","authors":"Pratikhya Raut, Deepak Kumar Panda, Umakanta Nanda, Chih-Chieh Hsu","doi":"10.1007/s00542-024-05638-7","DOIUrl":"https://doi.org/10.1007/s00542-024-05638-7","url":null,"abstract":"<p>A biosensor employing a junctionless TFET (JL-TEFT) to identify different protein molecules is modelled and investigated in this paper. The JLTFET is chosen for designing the biosensor because of its superiority over TFET and JLFET. The biomolecules can be captured in this type of devices by creating cavities across the gate. Various output parameters of label free biosensing with respect to various dielectric constants was studied using TCAD simulator. This article further portrays current and voltage sensitivity. This paper also investigates the fill factor impact of size of biomolecules and cavity positioning on the performance of biosensor. The dielectric modulation method for identifying a range of proteins and amino acids is being investigated through simulations. The sensitivity of JLTFET-based biosensors was found to be 10<sup>13</sup>. The novelties in this manuscript is that for the first time, an analytical mathematical model of a triple material gate asymmetrical hetero-dielectric JLTFET biosensor has been derived here. The developed model is not having any empirical parameter. Hence the proposed model is faster. Besides exhibiting increased sensitivity when compared to previous FET and TFET-based biosensors, this device also shows its suitability for low-power applications, hence providing a multitude of avenues for future exploration.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140889663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The Distributed power flow controller can be considered as advance power flow controller which is combination of series and shunt compensator without DC link. In this paper Space vector Pulse width Modulation employs in Distributed power flow Controller for Harmonics Reduction and power quality improvement. A new technique SVPWM adopted which reduces the harmonics and the same time improves power quality and increase transient stability. In this paper a new technique of Multi objective Grey wolf algorithm used to optimize the controller parameter of DPFC. For the design of PI controller GWO algorithm can be used for better optimistic performance of DPFC. As a result of that power quality and voltage profile improves drastically and the same time harmonics also reduced remarkable level of 4.62% of Voltage THD and 1.8% of current THD. The simulation result and hardware model Prove the feasibility of proposed Configuration.
{"title":"Harmonics reduction and power quality improvement in distributed power flow controller by SVPWM and MGWO technique","authors":"Subhasis Bandopadhyay, Atanu Bandyopadhyay, Ashoke Mondal, Pradip kumar Sadhu","doi":"10.1007/s00542-024-05647-6","DOIUrl":"https://doi.org/10.1007/s00542-024-05647-6","url":null,"abstract":"<p>The Distributed power flow controller can be considered as advance power flow controller which is combination of series and shunt compensator without DC link. In this paper Space vector Pulse width Modulation employs in Distributed power flow Controller for Harmonics Reduction and power quality improvement. A new technique SVPWM adopted which reduces the harmonics and the same time improves power quality and increase transient stability. In this paper a new technique of Multi objective Grey wolf algorithm used to optimize the controller parameter of DPFC. For the design of PI controller GWO algorithm can be used for better optimistic performance of DPFC. As a result of that power quality and voltage profile improves drastically and the same time harmonics also reduced remarkable level of 4.62% of Voltage THD and 1.8% of current THD. The simulation result and hardware model Prove the feasibility of proposed Configuration.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator (SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC performance, and switching performance over existing TFET topologies. A low threshold voltage of less than 200 mV in the proposed device allows for its integration in a variety of low-power applications. This device has been proposed in response to an acute need for low-power devices for bio-sensing, in situ memory, and loss-minimized switching. The proposed structure incorporates an overlapped gate pocket with a dual metal molybdenum-aluminum gate. The inclusion of a source side pocket improves the tunneling of charge carriers, which enhances the ON-state current. The Band-to-Band-Tunneling (BTBT) characteristic of TG-TFET in a direction perpendicular to the channel contributes to an elevated ON-current, attributed to a comparatively larger tunneling area. The channel exhibits a vertical U-shape, making the proposed device more scalable as compared to existing TFETs. A series of dimension and material-specific optimizations have been made and showcased in this work along with physical reasoning for the observed improvements. An ION/IOFF ratio of ~ 1014 is achieved with an ION of 1.05 × 10–3 A/μm and an IOFF of 1.35 × 10–17 A/μm. A highly reduced sub-threshold slope (lower is better) of 10.7 mV/dec is observed, indicating the good transient performance of the device. Considerable improvement in RF performance of the device has been showcased. The temperature dependence on transfer and RF characteristics has been also analyzed. The exhibited device characteristics indicate the potential of using composite material gates for low-power applications over their conventional single-metal counterparts. Reduced power consumption coupled with a compact device structure results in a minimally invasive device, suitable for low-power wearable sensors and bio-integrable circuits.
{"title":"Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments","authors":"Mukesh Kumar, Gautam Bhaskar, Aditya Chotalia, Chhavi Rani, Puja Ghosh, Soumak Nandi, Shashank Kumar Dubey, Kalyan Koley, Aminul Islam","doi":"10.1007/s00542-024-05677-0","DOIUrl":"https://doi.org/10.1007/s00542-024-05677-0","url":null,"abstract":"<p>In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator (SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC performance, and switching performance over existing TFET topologies. A low threshold voltage of less than 200 mV in the proposed device allows for its integration in a variety of low-power applications. This device has been proposed in response to an acute need for low-power devices for bio-sensing, in situ memory, and loss-minimized switching. The proposed structure incorporates an overlapped gate pocket with a dual metal molybdenum-aluminum gate. The inclusion of a source side pocket improves the tunneling of charge carriers, which enhances the ON-state current. The Band-to-Band-Tunneling (BTBT) characteristic of TG-TFET in a direction perpendicular to the channel contributes to an elevated ON-current, attributed to a comparatively larger tunneling area. The channel exhibits a vertical U-shape, making the proposed device more scalable as compared to existing TFETs. A series of dimension and material-specific optimizations have been made and showcased in this work along with physical reasoning for the observed improvements. An I<sub>ON</sub>/I<sub>OFF</sub> ratio of ~ 10<sup>14</sup> is achieved with an <i>I</i><sub>ON</sub> of 1.05 × 10<sup>–3</sup> A/μm and an <i>I</i><sub>OFF</sub> of 1.35 × 10<sup>–17</sup> A/μm. A highly reduced sub-threshold slope (lower is better) of 10.7 mV/dec is observed, indicating the good transient performance of the device. Considerable improvement in RF performance of the device has been showcased. The temperature dependence on transfer and RF characteristics has been also analyzed. The exhibited device characteristics indicate the potential of using composite material gates for low-power applications over their conventional single-metal counterparts. Reduced power consumption coupled with a compact device structure results in a minimally invasive device, suitable for low-power wearable sensors and bio-integrable circuits.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a novel microelectromechanical system (MEMS) inertial switch with self-latching mechanism and adjustable acceleration threshold is proposed. The switch consisted of a proof mass suspended by flexible springs. Permanent magnets, ferromagnets and planer coils were integrated in the device to realize the latching and threshold tuning mechanism. The centrifugal experiment and laser based position measurement have been conducted to measure the acceleration threshold and the stiffness of the spring respectively. The inertial threshold value and the spring stiffness were measured as 5.27 g and 163.12 N/m. The discrepancy between measured acceleration threshold results (5.27 g) and the analytical acceleration threshold results (5 g) is mainly due to the dimension errors during device fabrication. By applying a reverse current of 0.1 A, the switch can be unlatched from its ‘on-state’. Experiment also demonstrates that by applying a current varying from − 0.5 A to 0.5 A, the threshold value can be adjusted from 6 g to 3.75 g.
本文提出了一种新型微机电系统(MEMS)惯性开关,具有自锁机制和可调加速度阈值。该开关由一个由柔性弹簧悬挂的质量块组成。装置中集成了永磁体、铁磁体和刨线圈,以实现闭锁和阈值调节机制。为了测量加速度阈值和弹簧刚度,分别进行了离心实验和激光位置测量。测得的惯性阈值和弹簧刚度分别为 5.27 g 和 163.12 N/m。加速度阈值测量结果(5.27 g)与加速度阈值分析结果(5 g)之间的差异主要是由于器件制造过程中的尺寸误差造成的。通过施加 0.1 A 的反向电流,开关可以从 "导通状态 "解锁。实验还表明,通过施加 - 0.5 A 至 0.5 A 的电流,阈值可从 6 g 调整到 3.75 g。
{"title":"Design and analysis of micro inertial switch with magnetic latch and adjustable threshold","authors":"Xinyue Wang, Chao Zhi, Yanjun Li, Mingshan Qu, Zhuang Xiong","doi":"10.1007/s00542-024-05652-9","DOIUrl":"https://doi.org/10.1007/s00542-024-05652-9","url":null,"abstract":"<p>In this paper, a novel microelectromechanical system (MEMS) inertial switch with self-latching mechanism and adjustable acceleration threshold is proposed. The switch consisted of a proof mass suspended by flexible springs. Permanent magnets, ferromagnets and planer coils were integrated in the device to realize the latching and threshold tuning mechanism. The centrifugal experiment and laser based position measurement have been conducted to measure the acceleration threshold and the stiffness of the spring respectively. The inertial threshold value and the spring stiffness were measured as 5.27 g and 163.12 N/m. The discrepancy between measured acceleration threshold results (5.27 g) and the analytical acceleration threshold results (5 g) is mainly due to the dimension errors during device fabrication. By applying a reverse current of 0.1 A, the switch can be unlatched from its ‘on-state’. Experiment also demonstrates that by applying a current varying from − 0.5 A to 0.5 A, the threshold value can be adjusted from 6 g to 3.75 g.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Microfluidic technology is widely used in biomedicine, chemical analysis, and environmental improvement. Improvement of the mixing quality of low Reynolds number flows in micro-dimensional devices is essential. In this paper, we present a novel electroosmotic micromixer with twin diamond-shaped chambers and sawteeth, that can broaden the mixing space and boost the local velocity. The fluids are disturbed and folded due to the electroosmotic flow generated by electrodes on the chambers. The comprehensive analysis of the flow characteristics, the mixing performance and pressure drop of the micromixer of different parameters have been carried out. The findings demonstrate that each of these designs is good for efficient mixing, and numerous vortices are generated in the chambers. After optimizing the parameters, the best mixing efficiency can reach 99.9% in one second. The novel structure proposed in this paper provides a simple and effective method for mixing in the field of micro-total-analysis systems.
{"title":"Numerical study of a novel electroosmotic active micromixer with twin diamond-shaped chambers and sawteeth","authors":"Liqiang Zhang, Zhuoran Zhou, Jiakang Shi, Yuanshi Wei, Sicheng Yu, Heather Almond","doi":"10.1007/s00542-024-05671-6","DOIUrl":"https://doi.org/10.1007/s00542-024-05671-6","url":null,"abstract":"<p>Microfluidic technology is widely used in biomedicine, chemical analysis, and environmental improvement. Improvement of the mixing quality of low Reynolds number flows in micro-dimensional devices is essential. In this paper, we present a novel electroosmotic micromixer with twin diamond-shaped chambers and sawteeth, that can broaden the mixing space and boost the local velocity. The fluids are disturbed and folded due to the electroosmotic flow generated by electrodes on the chambers. The comprehensive analysis of the flow characteristics, the mixing performance and pressure drop of the micromixer of different parameters have been carried out. The findings demonstrate that each of these designs is good for efficient mixing, and numerous vortices are generated in the chambers. After optimizing the parameters, the best mixing efficiency can reach 99.9% in one second. The novel structure proposed in this paper provides a simple and effective method for mixing in the field of micro-total-analysis systems.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-30DOI: 10.1007/s00542-024-05678-z
D. Manaswi, Srinivas Rao Karumuri
The paper presents a new design of a CP JLTFET, which is a type of transistor with potential applications in various electronic devices. The proposed CP JLTFET design is aimed at improving the ON current and surface potentials of the device. These improvements are essential for enhancing the device’s functionality. The source and drain regions in the intrinsic silicon material are induced using appropriate metal work functions. This design choice is made for ease of fabrication, which is a critical consideration in semiconductor device manufacturing. The cavity length is varied between 8 and 10 nm, and different dielectric constants are used in the simulation. These variations are designed to optimize the ON state performance of the device, including ON drive current, potential, and electric field. The increase in tunneling of electrons is attributed to high carrier recombination in the channel region. Carrier recombination is a key factor in device behavior and performance. The paper describes the simulation of various electrical parameters of the proposed device. This likely includes drain current, surface potentials, electric field, and energy bands. The excellent performance parameters of the proposed device, when combined with appropriate materials and the introduction of a cavity, make it suitable for sensing applications of biomolecules. The paper suggests that the excellent performance parameters of the proposed device, when combined with appropriate materials and the introduction of a cavity in the device, make it suitable for sensing applications, particularly for detecting biomolecules.
{"title":"Design and performance analysis of charge plasma TFET for biosensor applications: a simulation study","authors":"D. Manaswi, Srinivas Rao Karumuri","doi":"10.1007/s00542-024-05678-z","DOIUrl":"https://doi.org/10.1007/s00542-024-05678-z","url":null,"abstract":"<p>The paper presents a new design of a CP JLTFET, which is a type of transistor with potential applications in various electronic devices. The proposed CP JLTFET design is aimed at improving the ON current and surface potentials of the device. These improvements are essential for enhancing the device’s functionality. The source and drain regions in the intrinsic silicon material are induced using appropriate metal work functions. This design choice is made for ease of fabrication, which is a critical consideration in semiconductor device manufacturing. The cavity length is varied between 8 and 10 nm, and different dielectric constants are used in the simulation. These variations are designed to optimize the ON state performance of the device, including ON drive current, potential, and electric field. The increase in tunneling of electrons is attributed to high carrier recombination in the channel region. Carrier recombination is a key factor in device behavior and performance. The paper describes the simulation of various electrical parameters of the proposed device. This likely includes drain current, surface potentials, electric field, and energy bands. The excellent performance parameters of the proposed device, when combined with appropriate materials and the introduction of a cavity, make it suitable for sensing applications of biomolecules. The paper suggests that the excellent performance parameters of the proposed device, when combined with appropriate materials and the introduction of a cavity in the device, make it suitable for sensing applications, particularly for detecting biomolecules.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The objective of this work is to create a finite element model of different magnetic actuator topologies using COMSOL Multiphysics software. The aim is to simulate and improve the magnetic field generated by different planar microcoil topologies while minimising energy dissipation. The magnetic field generated by square and circular spiral planar microcoils was compared with that produced by serpentine meander planar microcoils. It has been found that the trapping efficiency in a magnetic manipulation microfluidic system for biological applications is closely linked to the geometry and electrical parameters of the planar microcoils. In addition, the location of these microcoils within the microfluidic channel intended for the circulation of the paramagnetic microbeads also play a crucial role. The obtained results show that bu reducing the inter-turn spacing using a thinner conductor cross-section and injected a higher electrical intensity in the actuator, both the magnetic field strength and its gradient can be increased, and therefore cause a higher magnetic actuation force.
{"title":"Numerical investigation of planar microcoils integrated in microfluidic devices for biological applications","authors":"Abdelghani Benbrahim, Halima Benchenane, Salim Hammar, Benaoumeur Aour, Nasreddine Mekkakia-Maaza","doi":"10.1007/s00542-024-05674-3","DOIUrl":"https://doi.org/10.1007/s00542-024-05674-3","url":null,"abstract":"<p>The objective of this work is to create a finite element model of different magnetic actuator topologies using COMSOL Multiphysics software. The aim is to simulate and improve the magnetic field generated by different planar microcoil topologies while minimising energy dissipation. The magnetic field generated by square and circular spiral planar microcoils was compared with that produced by serpentine meander planar microcoils. It has been found that the trapping efficiency in a magnetic manipulation microfluidic system for biological applications is closely linked to the geometry and electrical parameters of the planar microcoils. In addition, the location of these microcoils within the microfluidic channel intended for the circulation of the paramagnetic microbeads also play a crucial role. The obtained results show that bu reducing the inter-turn spacing using a thinner conductor cross-section and injected a higher electrical intensity in the actuator, both the magnetic field strength and its gradient can be increased, and therefore cause a higher magnetic actuation force.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140832822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-26DOI: 10.1007/s00542-024-05676-1
Souvik Sengupta, Biplab Sarkar, Imama Ajmi, Abhishek Das
Modern radiotherapy planning and dose delivery utilize treatment planning systems (TPS) with medical linear accelerator (LINAC). A TPS is a specialized computer system that simulates values for the parameters of LINAC for radiation therapy delivery, including gantry movement, collimator angle, and dose calculation. The rule-based approach for a treatment plan is often found inaccurate due to the diverse nature of tumors and skin sensitivity in patients. Radiation-Induced Skin Toxicity (RIST) represents a significant adverse consequence of radiotherapy, impacting the well-being of cancer patients. To optimize radiation treatment and minimize RIST, the development of effective predictive and assessment methods is essential. Recent years have witnessed a surge in the application of artificial intelligence and machine learning to various aspects of radiation therapy, particularly in the prediction and grading of RIST. This study offers a comparative evaluation of the performance of diverse machine learning models for the screening and grading of RIST severity. Furthermore, it focuses on the identification of the most influential feature set for this classification task. Our dataset comprises 2000 records, incorporating 18 clinical attributes from patients who underwent radiotherapy treatment at an Indian hospital. We conduct thorough statistical analyses of features derived from these clinical attributes, utilizing different feature subsets for model training and evaluation. Intriguingly, we find that by utilizing just five selected clinical attributes, machine learning models achieve nearly equivalent performance to using the entire attribute set. In terms of model performance, Support Vector Machine excels in the screening task, while Multi-layer Perceptron stands out in the gradation task among single models. Within the ensemble methods, Random Forest surpasses AdaBoost in both the screening and gradation tasks.
{"title":"Optimizing dosage in linear accelerator based on predictive analysis of radiation induced skin toxicity using machine learning techniques","authors":"Souvik Sengupta, Biplab Sarkar, Imama Ajmi, Abhishek Das","doi":"10.1007/s00542-024-05676-1","DOIUrl":"https://doi.org/10.1007/s00542-024-05676-1","url":null,"abstract":"<p>Modern radiotherapy planning and dose delivery utilize treatment planning systems (TPS) with medical linear accelerator (LINAC). A TPS is a specialized computer system that simulates values for the parameters of LINAC for radiation therapy delivery, including gantry movement, collimator angle, and dose calculation. The rule-based approach for a treatment plan is often found inaccurate due to the diverse nature of tumors and skin sensitivity in patients. Radiation-Induced Skin Toxicity (RIST) represents a significant adverse consequence of radiotherapy, impacting the well-being of cancer patients. To optimize radiation treatment and minimize RIST, the development of effective predictive and assessment methods is essential. Recent years have witnessed a surge in the application of artificial intelligence and machine learning to various aspects of radiation therapy, particularly in the prediction and grading of RIST. This study offers a comparative evaluation of the performance of diverse machine learning models for the screening and grading of RIST severity. Furthermore, it focuses on the identification of the most influential feature set for this classification task. Our dataset comprises 2000 records, incorporating 18 clinical attributes from patients who underwent radiotherapy treatment at an Indian hospital. We conduct thorough statistical analyses of features derived from these clinical attributes, utilizing different feature subsets for model training and evaluation. Intriguingly, we find that by utilizing just five selected clinical attributes, machine learning models achieve nearly equivalent performance to using the entire attribute set. In terms of model performance, Support Vector Machine excels in the screening task, while Multi-layer Perceptron stands out in the gradation task among single models. Within the ensemble methods, Random Forest surpasses AdaBoost in both the screening and gradation tasks.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140801148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-26DOI: 10.1007/s00542-024-05670-7
Gaohua Wu, Guoping Li, Yiling Yang, Yanding Wei
This paper presents the design, modeling, and analysis of a new XYθ piezoelectric microstage with high amplification ratios and fully symmetrical structures. Through the reconfigurable assembly positions of piezoelectric actuators, the proposed microstage can provide multiple actuation modes and low translational parasitic motion. The microstage is devised using improved four-bar amplification mechanisms and parallelogram guiding mechanisms. Based on the matrix-based compliance modeling, static and dynamic models are obtained. The theoretical models are analyzed by finite element analysis (FEA). Finally, a prototype of the proposed microstage is manufactured, an experimental system is set up, and the performance of the microstage is tested. The experimental results show that the microstage has amplification ratios of 8.40 (x-axis) and 8.52 (y-axis). The displacement coupling ratios in the x- and y-axis directions are 0.83% and 0.94%, respectively. Moreover, the maximum rotation angle is ± 2379.18 μrad when the microstage uses the actuation mode of the pure center rotation. The XYθ microstage is capable of multiscale micromanipulation.
{"title":"Design, modeling, and analysis of a new XYθ piezoelectric microstage featuring high amplification ratios and multiple actuation modes","authors":"Gaohua Wu, Guoping Li, Yiling Yang, Yanding Wei","doi":"10.1007/s00542-024-05670-7","DOIUrl":"https://doi.org/10.1007/s00542-024-05670-7","url":null,"abstract":"<p>This paper presents the design, modeling, and analysis of a new <i>XYθ</i> piezoelectric microstage with high amplification ratios and fully symmetrical structures. Through the reconfigurable assembly positions of piezoelectric actuators, the proposed microstage can provide multiple actuation modes and low translational parasitic motion. The microstage is devised using improved four-bar amplification mechanisms and parallelogram guiding mechanisms. Based on the matrix-based compliance modeling, static and dynamic models are obtained. The theoretical models are analyzed by finite element analysis (FEA). Finally, a prototype of the proposed microstage is manufactured, an experimental system is set up, and the performance of the microstage is tested. The experimental results show that the microstage has amplification ratios of 8.40 (<i>x</i>-axis) and 8.52 (<i>y</i>-axis). The displacement coupling ratios in the <i>x</i>- and <i>y</i>-axis directions are 0.83% and 0.94%, respectively. Moreover, the maximum rotation angle is ± 2379.18 μrad when the microstage uses the actuation mode of the pure center rotation. The <i>XYθ</i> microstage is capable of multiscale micromanipulation.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140801074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}