Pub Date : 2023-10-12DOI: 10.3897/j.moem.9.3.115403
V. Tarala, Alexander A. Kravtsov, S.V. Kuznetsov, F. Malyavin, O. Chapura, E. A. Brazhko, L. Kozhitov
Optical ceramics based on YSAG : Yb : Er with the compositions {Y1.86Yb0.45Er0.09Sc0.6}[Al1.6Sc0.4]Al3O12 and {Y2.26Yb0.45Er0.09Sc0.2}[Al1.0Sc1.0]Al3O12 were fabricated by vacuum sintering from pre-synthesized nanocrystalline powders. A comparative analysis of these samples with optical ceramics of the compositions {Y2.34Yb0.45Er0.09Sc0.12}[Al1.92Sc0.08]Al3O12 and {Y0.96Yb0.45Er0.09Sc1.50}[Al1.8Sc0.2]Al3O12 was carried out. The influence of scandium cations in the dodecahedral and octahedral positions of the garnet crystal lattice on the refractive index of YSAG : Yb : Er, as well as the values of absorption coefficients, integral luminescent intensities, and lifetimes of excited states of Yb3+ (2F7/2 and 2F5/2) and Er3+ (4I15/2, 4I13/2, 4F9/2, and 4S3/2) cations was revealed in the wavelength ranges 520–700 nm and 890–1690 nm. It has been shown that by changing the concentrations of scandium cations in the dodecahedral and octahedral positions of the crystal lattice of YSAG : Yb : Er solid solutions, it is possible to purposefully change the efficiency of energy transfer from ytterbium cations to erbium cations.
{"title":"Optical properties of YSAG : Yb : Er ceramics with Sc3+ cations in the dodecahedral and octahedral positions of the garnet crystal lattice","authors":"V. Tarala, Alexander A. Kravtsov, S.V. Kuznetsov, F. Malyavin, O. Chapura, E. A. Brazhko, L. Kozhitov","doi":"10.3897/j.moem.9.3.115403","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.115403","url":null,"abstract":"Optical ceramics based on YSAG : Yb : Er with the compositions {Y1.86Yb0.45Er0.09Sc0.6}[Al1.6Sc0.4]Al3O12 and {Y2.26Yb0.45Er0.09Sc0.2}[Al1.0Sc1.0]Al3O12 were fabricated by vacuum sintering from pre-synthesized nanocrystalline powders. A comparative analysis of these samples with optical ceramics of the compositions {Y2.34Yb0.45Er0.09Sc0.12}[Al1.92Sc0.08]Al3O12 and {Y0.96Yb0.45Er0.09Sc1.50}[Al1.8Sc0.2]Al3O12 was carried out. The influence of scandium cations in the dodecahedral and octahedral positions of the garnet crystal lattice on the refractive index of YSAG : Yb : Er, as well as the values of absorption coefficients, integral luminescent intensities, and lifetimes of excited states of Yb3+ (2F7/2 and 2F5/2) and Er3+ (4I15/2, 4I13/2, 4F9/2, and 4S3/2) cations was revealed in the wavelength ranges 520–700 nm and 890–1690 nm. It has been shown that by changing the concentrations of scandium cations in the dodecahedral and octahedral positions of the crystal lattice of YSAG : Yb : Er solid solutions, it is possible to purposefully change the efficiency of energy transfer from ytterbium cations to erbium cations.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139319865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-11DOI: 10.3897/j.moem.9.3.115614
M. Borik, Alexey Kulebyakin, E. Lomonova, F. Milovich, V. Myzina, P. Ryabochkina, N. V. Sidorova, N. Tabachkova, A. Chislov
The effect of high-temperature treatment in different media on the phase composition, microhardness and fracture toughness of (ZrO2)1-х(Sm2O3)х crystals with x = 0.02÷0.06 has been studied. The crystals have been grown using direction melt crystallization in a cold skull. The crystals have been heat treated at 1600 °C for 2 h in air and in vacuum. The phase composition of the crystals has been studied using X-ray diffraction and Raman scattering. We show that samarium cations enter the ZrO2 lattice mainly in a trivalent charge state and do not change their charge after air or vacuum annealing. The as-annealed phase composition has changed in all the test crystals except for the (ZrO2)0.94(Sm2O3)0.06 composition. After air or vacuum annealing the (ZrO2)1-x(Sm2O3)x crystals with 0.002 ≤ x ≤ 0.05 contain a monoclinic phase. The (ZrO2)0.94(Sm2O3)0.06 crystals contain two tetragonal phases (t and t´) with different tetragonality degrees. After air or vacuum annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals the lattice parameters of the t and t´ phases change in opposite manners, suggesting that the tetragonality degree of the t phase increases whereas the tetragonality degree of the t´ phase decreases. The microhardness and fracture toughness of the as-annealed crystals depend on the Sm2O3 concentration in the solid solutions. The formation of the monoclinic phase in the (ZrO2)1-х(Sm2O3)х crystals with 0.037 ≤ x ≤ 0.05 significantly reduces the microhardness and fracture toughness of the crystals. Annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals triggers more efficient hardening mechanisms and thus increases the fracture toughness of the crystals. We show that air or vacuum annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals increases the fracture toughness of the crystals by 1.5 times as compared with that of the as-grown crystals.
研究了在不同介质中进行高温处理对 x = 0.02÷0.06 的 (ZrO2)1-х(Sm2O3)х 晶体的相组成、显微硬度和断裂韧性的影响。晶体是在冷头骨中采用定向熔融结晶法生长的。晶体在 1600 °C 的空气和真空环境中热处理 2 小时。利用 X 射线衍射和拉曼散射对晶体的相组成进行了研究。我们发现，钐阳离子主要以三价电荷状态进入 ZrO2 晶格，在空气或真空退火后，它们的电荷不会发生变化。除 (ZrO2)0.94(Sm2O3)0.06 成分外，所有测试晶体的退火相成分都发生了变化。经过空气或真空退火后，0.002 ≤ x ≤ 0.05 的 (ZrO2)1-x(Sm2O3)x 晶体含有单斜相。(ZrO2)0.94(Sm2O3)0.06 晶体含有两个四方相（t 和 t´），其四方度不同。在对(ZrO2)0.94(Sm2O3)0.06 晶体进行空气或真空退火后，t 相和 t´ 相的晶格参数发生了相反的变化，这表明 t 相的四方度增加，而 t´ 相的四方度降低。退火晶体的显微硬度和断裂韧性取决于固溶体中的 Sm2O3 浓度。0.037 ≤ x ≤ 0.05 的 (ZrO2)1-х(Sm2O3)х 晶体中单斜相的形成会显著降低晶体的显微硬度和断裂韧性。(ZrO2)0.94(Sm2O3)0.06 晶体的退火会引发更有效的硬化机制，从而提高晶体的断裂韧性。我们的研究表明，(ZrO2)0.94(Sm2O3)0.06 晶体的空气退火或真空退火可使晶体的断裂韧性比正常生长的晶体提高 1.5 倍。
{"title":"Effect of heat treatment on the structure and mechanical properties of zirconia crystals partially stabilized with samarium oxide","authors":"M. Borik, Alexey Kulebyakin, E. Lomonova, F. Milovich, V. Myzina, P. Ryabochkina, N. V. Sidorova, N. Tabachkova, A. Chislov","doi":"10.3897/j.moem.9.3.115614","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.115614","url":null,"abstract":"The effect of high-temperature treatment in different media on the phase composition, microhardness and fracture toughness of (ZrO2)1-х(Sm2O3)х crystals with x = 0.02÷0.06 has been studied. The crystals have been grown using direction melt crystallization in a cold skull. The crystals have been heat treated at 1600 °C for 2 h in air and in vacuum. The phase composition of the crystals has been studied using X-ray diffraction and Raman scattering. We show that samarium cations enter the ZrO2 lattice mainly in a trivalent charge state and do not change their charge after air or vacuum annealing. The as-annealed phase composition has changed in all the test crystals except for the (ZrO2)0.94(Sm2O3)0.06 composition. After air or vacuum annealing the (ZrO2)1-x(Sm2O3)x crystals with 0.002 ≤ x ≤ 0.05 contain a monoclinic phase. The (ZrO2)0.94(Sm2O3)0.06 crystals contain two tetragonal phases (t and t´) with different tetragonality degrees. After air or vacuum annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals the lattice parameters of the t and t´ phases change in opposite manners, suggesting that the tetragonality degree of the t phase increases whereas the tetragonality degree of the t´ phase decreases. The microhardness and fracture toughness of the as-annealed crystals depend on the Sm2O3 concentration in the solid solutions. The formation of the monoclinic phase in the (ZrO2)1-х(Sm2O3)х crystals with 0.037 ≤ x ≤ 0.05 significantly reduces the microhardness and fracture toughness of the crystals. Annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals triggers more efficient hardening mechanisms and thus increases the fracture toughness of the crystals. We show that air or vacuum annealing of the (ZrO2)0.94(Sm2O3)0.06 crystals increases the fracture toughness of the crystals by 1.5 times as compared with that of the as-grown crystals.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-11DOI: 10.3897/j.moem.9.3.113245
A. N. Aleshin, O. A. Ruban
In this study, we conducted an investigation into the Ag/SnSe/Ge2Se3/W ionic memristor, focusing on the determination of activation energies associated with its two primary operational processes: the formation of conductive filaments and memristor degradation. To ascertain the electrical conductivity of the memristor in both its basic electronic states, a low resistance state and a high resistance state, we constructed current-voltage characteristics. The estimation of activation energy values was carried out employing the Arrhenius law and the provisions of irreversible thermodynamics, with specific reference to Onsager's second postulate. This fundamental concept posits that the growth rate of irreversible component of entropy can be expressed as the summation of products involving fluxes and thermodynamic forces when a system tends towards its equilibrium state. In the context of this study, the equilibrium state of the memristor is defined as the condition at which the memristor can no longer function as a resistive memory cell. Our experimentation involved the application of a flux of Ag+ ions (electromigration). The calculated activation energy values were found to be 0.24 eV for the initial process and 1.16 eV for the latter. These divergent activation energy values indicate the differentiation between the agglomerative mechanism that governs the formation of conductive channels, prevalent in the Ag/SnSe/Ge2Se3/W memristor, and the "conventional" substance transfer mechanism based on a group of point defects that manifests itself during the memristor's degradation.
{"title":"Estimation of the activation energy in the Ag/SnSe/Ge2Se3/W self-directed channel memristor","authors":"A. N. Aleshin, O. A. Ruban","doi":"10.3897/j.moem.9.3.113245","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.113245","url":null,"abstract":"In this study, we conducted an investigation into the Ag/SnSe/Ge2Se3/W ionic memristor, focusing on the determination of activation energies associated with its two primary operational processes: the formation of conductive filaments and memristor degradation. To ascertain the electrical conductivity of the memristor in both its basic electronic states, a low resistance state and a high resistance state, we constructed current-voltage characteristics. The estimation of activation energy values was carried out employing the Arrhenius law and the provisions of irreversible thermodynamics, with specific reference to Onsager's second postulate. This fundamental concept posits that the growth rate of irreversible component of entropy can be expressed as the summation of products involving fluxes and thermodynamic forces when a system tends towards its equilibrium state. In the context of this study, the equilibrium state of the memristor is defined as the condition at which the memristor can no longer function as a resistive memory cell. Our experimentation involved the application of a flux of Ag+ ions (electromigration). The calculated activation energy values were found to be 0.24 eV for the initial process and 1.16 eV for the latter. These divergent activation energy values indicate the differentiation between the agglomerative mechanism that governs the formation of conductive channels, prevalent in the Ag/SnSe/Ge2Se3/W memristor, and the \"conventional\" substance transfer mechanism based on a group of point defects that manifests itself during the memristor's degradation.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-10-11DOI: 10.3897/j.moem.9.3.114129
V. V. Kuts, A. Turutin, A. Kislyuk, I. Kubasov, E. E. Maksumova, A. A. Temirov, M. D. Malinkovich, N. A. Sobolev, Yuri N. Parkhomenko
Magnetoelectric (ME) composites have a wide range of possible applications, especially as room-temperature sensors of weak magnetic fields in magnetocardiography and magnetoencephalography medical diagnostic equipment. In most works on ME composites, structures are tested in uniform magnetic fields; however, for practical application, detailed knowledge of their behaviour in inhomogeneous magnetic fields (IMFs) is necessary. In this work, we measured IMFs with radial symmetry produced by alternate currents (AC) passing through an individual thin wire upon different placements of an ME sensor. An ME self-biased b-LN/Ni/Metglas structure with a sensitivity to the magnetic field of 120 V/T was created for IMF detection. The necessity of an external biasing magnetic field was avoided by the inclusion of a nickel layer having remanent magnetization. The ME composite shows a non-zero ME coefficient of 0.24 V/(cm · Oe) in the absence of an external DC magnetic field. It is shown that the output voltage amplitude from the ME composite, which is located in an AC IMF, is dependent on the relative position of the investigated sample and magnetic field lines. Maximum ME signal is obtained when the long side of the ME sample is perpendicular to the wire, and the symmetry plane which divides the long side into two similar pieces contains the wire axis. In the frequency range from 400 Hz to 1000 Hz in the absence of vibrational and other noises, the detection limit amounts to (2 ± 0.4) nT/Hz1/2.
磁电（ME）复合材料具有广泛的应用前景，特别是在磁心动图和磁脑电图医疗诊断设备中作为室温弱磁场传感器。在大多数有关 ME 复合材料的研究中，结构都是在均匀磁场中进行测试的；然而，为了实际应用，有必要详细了解它们在不均匀磁场（IMF）中的行为。在这项工作中，我们测量了交变电流（AC）通过单根细线时产生的径向对称的 IMF，该电流通过 ME 传感器的不同位置。我们创建了一个对磁场灵敏度为 120 V/T 的 ME 自偏压 b-LN/Ni/Metglas 结构，用于 IMF 检测。通过加入具有剩磁化的镍层，避免了外部偏置磁场的必要性。在没有外部直流磁场的情况下，ME 复合材料显示出 0.24 V/（cm - Oe）的非零 ME 系数。研究表明，位于交流 IMF 中的 ME 复合材料的输出电压振幅取决于被研究样品和磁场线的相对位置。当 ME 样品的长边垂直于导线，且将长边分成两个相似部分的对称面包含导线轴线时，可获得最大 ME 信号。在没有振动和其他噪音的情况下，频率范围为 400 Hz 至 1000 Hz，探测极限为 (2 ± 0.4) nT/Hz1/2。
{"title":"Detection of inhomogeneous magnetic fields using magnetoelectric composites","authors":"V. V. Kuts, A. Turutin, A. Kislyuk, I. Kubasov, E. E. Maksumova, A. A. Temirov, M. D. Malinkovich, N. A. Sobolev, Yuri N. Parkhomenko","doi":"10.3897/j.moem.9.3.114129","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.114129","url":null,"abstract":"Magnetoelectric (ME) composites have a wide range of possible applications, especially as room-temperature sensors of weak magnetic fields in magnetocardiography and magnetoencephalography medical diagnostic equipment. In most works on ME composites, structures are tested in uniform magnetic fields; however, for practical application, detailed knowledge of their behaviour in inhomogeneous magnetic fields (IMFs) is necessary. In this work, we measured IMFs with radial symmetry produced by alternate currents (AC) passing through an individual thin wire upon different placements of an ME sensor. An ME self-biased b-LN/Ni/Metglas structure with a sensitivity to the magnetic field of 120 V/T was created for IMF detection. The necessity of an external biasing magnetic field was avoided by the inclusion of a nickel layer having remanent magnetization. The ME composite shows a non-zero ME coefficient of 0.24 V/(cm · Oe) in the absence of an external DC magnetic field. It is shown that the output voltage amplitude from the ME composite, which is located in an AC IMF, is dependent on the relative position of the investigated sample and magnetic field lines. Maximum ME signal is obtained when the long side of the ME sample is perpendicular to the wire, and the symmetry plane which divides the long side into two similar pieces contains the wire axis. In the frequency range from 400 Hz to 1000 Hz in the absence of vibrational and other noises, the detection limit amounts to (2 ± 0.4) nT/Hz1/2.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-30DOI: 10.3897/j.moem.9.3.113479
E. V. Zabelina, N. Kozlova, Oleg A. Buzanov
Nominally pure lanthanum-gallium tantalate La3Ga5.5Ta0.5O14 crystals doped with aluminum, silicon and gallium oxide to above stoichiometric content have been grown by the Czochralski technique in iridium crucibles in argon and in agron with addition of oxygen atmospheres. The transmittance spectra of the crystals have been measured on a Cary-5000 UV-Vis-NIR spectrophotometer in the 200–800 nm range. Absorption spectra α(λ) have been plotted on the basis of the experimental data. The absorption spectra of the undoped crystals grown in an oxygen-free atmosphere have one weak absorption band at λ ~ 290 nm. The absorption spectra of the crystals grown in an agron with addition of oxygen have absorption bands at λ ~ 290, 360 and 480 nm. We show that for the crystals grown in an oxygen-free atmosphere, gallium doping to above stoichiometric content reduces the intensity of its only λ ~ 290 nm absorption band. Aluminum doping of the La3Ga5.5Ta0.5O14 crystals grown in an oxygen-free atmosphere significantly reduces the intensity of the λ ~ 290 nm absorption band and increases the intensity of the λ ~ 360 and 480 nm bands. Aluminum doping of the La3Ga5.5Ta0.5O14 crystals grown in an oxygen-containing atmosphere reduces the intensity of the λ ~ 360 and 480 nm bands and increases the intensity of the λ ~ 290 nm absorption band. Silicon doping of these crystals significantly reduces the intensity of the λ ~ 480 nm band and also reduces the intensity of the λ ~ 290 and 360 nm bands.
{"title":"Effect of doping on the optical properties of lanthanum-gallium tantalate","authors":"E. V. Zabelina, N. Kozlova, Oleg A. Buzanov","doi":"10.3897/j.moem.9.3.113479","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.113479","url":null,"abstract":"Nominally pure lanthanum-gallium tantalate La3Ga5.5Ta0.5O14 crystals doped with aluminum, silicon and gallium oxide to above stoichiometric content have been grown by the Czochralski technique in iridium crucibles in argon and in agron with addition of oxygen atmospheres. The transmittance spectra of the crystals have been measured on a Cary-5000 UV-Vis-NIR spectrophotometer in the 200–800 nm range. Absorption spectra α(λ) have been plotted on the basis of the experimental data. The absorption spectra of the undoped crystals grown in an oxygen-free atmosphere have one weak absorption band at λ ~ 290 nm. The absorption spectra of the crystals grown in an agron with addition of oxygen have absorption bands at λ ~ 290, 360 and 480 nm. We show that for the crystals grown in an oxygen-free atmosphere, gallium doping to above stoichiometric content reduces the intensity of its only λ ~ 290 nm absorption band. Aluminum doping of the La3Ga5.5Ta0.5O14 crystals grown in an oxygen-free atmosphere significantly reduces the intensity of the λ ~ 290 nm absorption band and increases the intensity of the λ ~ 360 and 480 nm bands. Aluminum doping of the La3Ga5.5Ta0.5O14 crystals grown in an oxygen-containing atmosphere reduces the intensity of the λ ~ 360 and 480 nm bands and increases the intensity of the λ ~ 290 nm absorption band. Silicon doping of these crystals significantly reduces the intensity of the λ ~ 480 nm band and also reduces the intensity of the λ ~ 290 and 360 nm bands.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"233 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139333224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-30DOI: 10.3897/j.moem.9.3.111530
Vitaliy V. Starkov, E. Gosteva
Modern understanding of the material science of semiconductor silicon allowed the authors to propose a new concept of the so-called “charge pumping” in the structures of photovoltaic converters or solar cells. This paper presents theoretical estimates of the rate of separation and collection of light-generated charge carriers in the structures of conventional silicon solar cells and charge-pumped solar cells. Relatively cheaper so-called “solar silicon” of p-type conductivity is typically used in the industrial production of solar cells. This type of silicon is particularly prone to the formation of thermodonor centers. Partial or, at higher temperatures (about 400 °C), even complete overcompensation of the hole type of conductivity in the base region may occur as a result of prolonged heating. This paper presents an original model describing the local formation of n+ regions in the solar cell structure by the so-called “local photon annealing”. These regions were named “charge pumps”. Experimental data on the formation of n+ regions as a result of Li diffusion are reported as an experimental confirmation of the theoretical estimations made in this work. Comparative volt-ampere characteristics of experimental charge-pumped photovoltaic converters and conventional solar cells are presented, showing an up to 30% increase in the short-circuit current Js.c for the experimental structures under standard illumination (AM1.5). The proposed technological aspects of charge-pumped photovoltaic converter fabrication deliver a cheap process and can be implemented in the industrial production of solar cells with little effort.
{"title":"Charge pumping in solar cell structure","authors":"Vitaliy V. Starkov, E. Gosteva","doi":"10.3897/j.moem.9.3.111530","DOIUrl":"https://doi.org/10.3897/j.moem.9.3.111530","url":null,"abstract":"Modern understanding of the material science of semiconductor silicon allowed the authors to propose a new concept of the so-called “charge pumping” in the structures of photovoltaic converters or solar cells. This paper presents theoretical estimates of the rate of separation and collection of light-generated charge carriers in the structures of conventional silicon solar cells and charge-pumped solar cells. Relatively cheaper so-called “solar silicon” of p-type conductivity is typically used in the industrial production of solar cells. This type of silicon is particularly prone to the formation of thermodonor centers. Partial or, at higher temperatures (about 400 °C), even complete overcompensation of the hole type of conductivity in the base region may occur as a result of prolonged heating. This paper presents an original model describing the local formation of n+ regions in the solar cell structure by the so-called “local photon annealing”. These regions were named “charge pumps”. Experimental data on the formation of n+ regions as a result of Li diffusion are reported as an experimental confirmation of the theoretical estimations made in this work. Comparative volt-ampere characteristics of experimental charge-pumped photovoltaic converters and conventional solar cells are presented, showing an up to 30% increase in the short-circuit current Js.c for the experimental structures under standard illumination (AM1.5). The proposed technological aspects of charge-pumped photovoltaic converter fabrication deliver a cheap process and can be implemented in the industrial production of solar cells with little effort.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139331679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-21DOI: 10.3390/electronicmat4030011
Wojciech Pisula
Inorganic semiconductors have a wide range of applications in various fields, including electronics, optoelectronics, photovoltaics, and even catalysis [...]
无机半导体在各个领域都有广泛的应用，包括电子、光电子、光伏，甚至催化[…]
{"title":"Inorganic Semiconductors in Electronic Applications","authors":"Wojciech Pisula","doi":"10.3390/electronicmat4030011","DOIUrl":"https://doi.org/10.3390/electronicmat4030011","url":null,"abstract":"Inorganic semiconductors have a wide range of applications in various fields, including electronics, optoelectronics, photovoltaics, and even catalysis [...]","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136236449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-08-30DOI: 10.3390/electronicmat4030010
Jeffrie Fina, Navdeep Kaur, Chen-Yu Chang, Cheng-Yu Lai, D. Radu
Dye-sensitized solar cells (DSSCs) hold unique promise in solar photovoltaics owing to their low-cost fabrication and high efficiency in ambient conditions. However, to improve their commercial viability, effective, and low-cost methods must be employed to enhance their light harvesting capabilities, and hence photovoltaic (PV) performance. Improving the absorption of incoming light is a critical strategy for maximizing solar cell efficiency while overcoming material limitations. Mesoporous silica nanoparticles (MSNs) were employed herein as a reflective layer on the back of transparent counter electrodes. Chemically synthesized MSNs were applied to DSSCs via bar coating as a facile fabrication step compatible with roll-to-roll manufacturing. The MSNs diffusely scatter the unused incident light transmitted through the DSSCs back into the photoactive layers, increasing the absorption of light by N719 dye molecules. This resulted in a 20% increase in power conversion efficiency (PCE), from 5.57% in a standard cell to 6.68% with the addition of MSNs. The improved performance is attributed to an increase in photon absorption which led to the generation of a higher number of charge carriers, thus increasing the current density in DSSCs. These results were corroborated with electrochemical impedance spectroscopy (EIS), which showed improved charge transport kinetics. The use of MSNs as reflectors proved to be an effective practical method for enhancing the performance of thin film solar cells. Due to silica’s abundance and biocompatibility, MSNs are an attractive material for meeting the low-cost and non-toxic requirements for commercially viable integrated PVs.
{"title":"Enhancing Light Harvesting in Dye-Sensitized Solar Cells through Mesoporous Silica Nanoparticle-Mediated Diffuse Scattering Back Reflectors","authors":"Jeffrie Fina, Navdeep Kaur, Chen-Yu Chang, Cheng-Yu Lai, D. Radu","doi":"10.3390/electronicmat4030010","DOIUrl":"https://doi.org/10.3390/electronicmat4030010","url":null,"abstract":"Dye-sensitized solar cells (DSSCs) hold unique promise in solar photovoltaics owing to their low-cost fabrication and high efficiency in ambient conditions. However, to improve their commercial viability, effective, and low-cost methods must be employed to enhance their light harvesting capabilities, and hence photovoltaic (PV) performance. Improving the absorption of incoming light is a critical strategy for maximizing solar cell efficiency while overcoming material limitations. Mesoporous silica nanoparticles (MSNs) were employed herein as a reflective layer on the back of transparent counter electrodes. Chemically synthesized MSNs were applied to DSSCs via bar coating as a facile fabrication step compatible with roll-to-roll manufacturing. The MSNs diffusely scatter the unused incident light transmitted through the DSSCs back into the photoactive layers, increasing the absorption of light by N719 dye molecules. This resulted in a 20% increase in power conversion efficiency (PCE), from 5.57% in a standard cell to 6.68% with the addition of MSNs. The improved performance is attributed to an increase in photon absorption which led to the generation of a higher number of charge carriers, thus increasing the current density in DSSCs. These results were corroborated with electrochemical impedance spectroscopy (EIS), which showed improved charge transport kinetics. The use of MSNs as reflectors proved to be an effective practical method for enhancing the performance of thin film solar cells. Due to silica’s abundance and biocompatibility, MSNs are an attractive material for meeting the low-cost and non-toxic requirements for commercially viable integrated PVs.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"74 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86312246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-06DOI: 10.3897/j.moem.9.2.109923
V. Sleptsov, L. Kozhitov, A. Diteleva, D. Kukushkin, A. Popkova
Physicochemical fundamentals have been developed for the basic design solutions and fabrication technologies of prospective electrolytic power cells with a reusable cell capacity of 350–500 W·h/kg at the first stage and 1000 W·h/kg at the second stage. Along with conventional chemical current sources and ionistors, there are emerging high-performance supercapacitor structures with thin dielectric in the double electric layer and hybrid capacitors in which energy is accumulated in the double electric layer and due to electrochemical processes. This approach reduces the internal resistance of the electrolytic cells thus decreasing the heat emission during operation and therefore providing for a higher specific energy capacity and operation safety, shorter charging time and an increase in specific power. Prospective anode is a nanostructured electrode material in the form of a carbon matrix filled with a nanostructured chemically active material. Promising carbon matrix fillers are Li and its alloys, Si, Al, Na, Sn, Mg, Zn, Ni, Co, Ag, as well as a range of other materials and their compounds. The effect of carbon material specific surface area, dielectric permeability and chemically active material addition on the specific energy capacity has been studied. Theoretical specific energy capacity of metal/air hybrid capacitors has been calculated. Thin-film technological system has been designed for new generation electrode materials in the form of carbon matrices with highly developed surface containing thin tunneling dielectrics and chemically active materials on dielectric surface.
{"title":"Recent progress and development prospects of mobile current sources","authors":"V. Sleptsov, L. Kozhitov, A. Diteleva, D. Kukushkin, A. Popkova","doi":"10.3897/j.moem.9.2.109923","DOIUrl":"https://doi.org/10.3897/j.moem.9.2.109923","url":null,"abstract":"Physicochemical fundamentals have been developed for the basic design solutions and fabrication technologies of prospective electrolytic power cells with a reusable cell capacity of 350–500 W·h/kg at the first stage and 1000 W·h/kg at the second stage. Along with conventional chemical current sources and ionistors, there are emerging high-performance supercapacitor structures with thin dielectric in the double electric layer and hybrid capacitors in which energy is accumulated in the double electric layer and due to electrochemical processes. This approach reduces the internal resistance of the electrolytic cells thus decreasing the heat emission during operation and therefore providing for a higher specific energy capacity and operation safety, shorter charging time and an increase in specific power. Prospective anode is a nanostructured electrode material in the form of a carbon matrix filled with a nanostructured chemically active material. Promising carbon matrix fillers are Li and its alloys, Si, Al, Na, Sn, Mg, Zn, Ni, Co, Ag, as well as a range of other materials and their compounds. The effect of carbon material specific surface area, dielectric permeability and chemically active material addition on the specific energy capacity has been studied. Theoretical specific energy capacity of metal/air hybrid capacitors has been calculated. Thin-film technological system has been designed for new generation electrode materials in the form of carbon matrices with highly developed surface containing thin tunneling dielectrics and chemically active materials on dielectric surface.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"76 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80478078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Feklistov, A. Lemzyakov, A. Shklyaev, D. Protasov, A. Deryabin, E. V. Spesivsev, D. Gulyaev, A. Pugachev, D. G. Esaev
In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In2O3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In2O3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In2O3 : Er heterojunction has been analyzed. The energy gap between the In2O3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV.
{"title":"Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films","authors":"K. Feklistov, A. Lemzyakov, A. Shklyaev, D. Protasov, A. Deryabin, E. V. Spesivsev, D. Gulyaev, A. Pugachev, D. G. Esaev","doi":"10.3897/j.moem.9.109980","DOIUrl":"https://doi.org/10.3897/j.moem.9.109980","url":null,"abstract":"In2O3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In2O3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In2O3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In2O3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In2O3 : Er heterojunction has been analyzed. The energy gap between the In2O3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83252554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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