Pub Date : 2023-07-05DOI: 10.3897/j.moem.9.2.109827
Aliaksei V. Pashkevich, A. Fedotov, Eugen N. Poddenezhny, L. Bliznyuk, V. Khovaylo, V. Fedotova, A. A. Kharchenko
The thermal, electrical and thermoelectric properties of ZnO–MexOy ceramics with 1 ≤ x, y ≤ 3, where Me = Al, Co, Fe, Ni, Ti, have been studied. The specimens have been synthesized using the ceramic sintering technology from two or more oxides in an open atmosphere with annealing temperature and time variation. The structural and phase data on the ceramics have shown that post-synthesis addition of MexOy doping powders to wurtzite-structured ZnO powder causes Znx (Mе)yO4 spinel-like second phase precipitation and a 4-fold growth of ceramics porosity. Room temperature heat conductivity studies have testified to predominant lattice contribution. A decrease in the heat conductivity upon doping proves to be caused by phonon scattering intensification due to the following factors: size factor upon zinc ion substitution in the ZnO lattice (wurtzite) by MexOy doping oxide metal ions; defect formation, i.e., point defects, grain boundaries (microstructure refinement); porosity growth (density decline); secondary phase particle nucleation (Znx (Mе)yO4 spinel-like ones). The above listed factors entailed by zinc ion substitution for metal ions (Co, Al, Ti, Ni, Fe) increase the figure-of-merit ZT by four orders of magnitude (due to a decrease in the electrical resistivity and heat conductivity coupled with a moderate thermo-emf decline). The decrease in the electrical resistivity originates from a more homogeneous distribution of doping metal ions in the wurtzite lattice upon longer annealing which increases the number of donor centers.
{"title":"Thermal and thermoelectric properties of metal-doped zinc oxide ceramics","authors":"Aliaksei V. Pashkevich, A. Fedotov, Eugen N. Poddenezhny, L. Bliznyuk, V. Khovaylo, V. Fedotova, A. A. Kharchenko","doi":"10.3897/j.moem.9.2.109827","DOIUrl":"https://doi.org/10.3897/j.moem.9.2.109827","url":null,"abstract":"The thermal, electrical and thermoelectric properties of ZnO–MexOy ceramics with 1 ≤ x, y ≤ 3, where Me = Al, Co, Fe, Ni, Ti, have been studied. The specimens have been synthesized using the ceramic sintering technology from two or more oxides in an open atmosphere with annealing temperature and time variation. The structural and phase data on the ceramics have shown that post-synthesis addition of MexOy doping powders to wurtzite-structured ZnO powder causes Znx (Mе)yO4 spinel-like second phase precipitation and a 4-fold growth of ceramics porosity. Room temperature heat conductivity studies have testified to predominant lattice contribution. A decrease in the heat conductivity upon doping proves to be caused by phonon scattering intensification due to the following factors: size factor upon zinc ion substitution in the ZnO lattice (wurtzite) by MexOy doping oxide metal ions; defect formation, i.e., point defects, grain boundaries (microstructure refinement); porosity growth (density decline); secondary phase particle nucleation (Znx (Mе)yO4 spinel-like ones). The above listed factors entailed by zinc ion substitution for metal ions (Co, Al, Ti, Ni, Fe) increase the figure-of-merit ZT by four orders of magnitude (due to a decrease in the electrical resistivity and heat conductivity coupled with a moderate thermo-emf decline). The decrease in the electrical resistivity originates from a more homogeneous distribution of doping metal ions in the wurtzite lattice upon longer annealing which increases the number of donor centers.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73644353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Belov, V. E. Kanevskii, E. I. Kladova, S. Knyazev, N. Y. Komarovskiy, I. B. Parfent'eva, Evgeniya V. Chernyshova
The optical and electrical properties of zinc-doped Cz p-GaAs have been studied. Reflection spectra of ten p-GaAs specimens have been taken in the mid-IR region. Van der Pau galvanomagnetic, electrical resistivity and Hall coefficient measurements have been carried out for the same specimens (all the measurements were carried out at room temperature). The reflection spectra have been processed using the Kramers–Kronig relations, spectral dependences of the real and imaginary parts of the complex dielectric permeability have been calculated and loss function curves have been plotted. The loss function maximum position has been used to calculate the characteristic wavenumber corresponding to the high-frequency plasmon-phonon mode frequency. Theoretical calculations have been conducted and a calibration curve has been built up for determining heavy hole concentration in p-GaAs at T = 295 K based on known characteristic wavenumber. Further matching of the optical and Hall data has been used for determining the light to heavy hole mobility ratio. This ratio proves to be in the 1.9–2.8 range which is far lower as compared with theoretical predictions in the assumption of the same scattering mechanism for light and heavy holes (at optical phonons). It has been hypothesized that the scattering mechanisms for light and heavy holes differ.
{"title":"Comparison between optical and electrical data on hole concentration in zinc-doped p-GaAs","authors":"A. Belov, V. E. Kanevskii, E. I. Kladova, S. Knyazev, N. Y. Komarovskiy, I. B. Parfent'eva, Evgeniya V. Chernyshova","doi":"10.3897/j.moem.9.109743","DOIUrl":"https://doi.org/10.3897/j.moem.9.109743","url":null,"abstract":"The optical and electrical properties of zinc-doped Cz p-GaAs have been studied. Reflection spectra of ten p-GaAs specimens have been taken in the mid-IR region. Van der Pau galvanomagnetic, electrical resistivity and Hall coefficient measurements have been carried out for the same specimens (all the measurements were carried out at room temperature). The reflection spectra have been processed using the Kramers–Kronig relations, spectral dependences of the real and imaginary parts of the complex dielectric permeability have been calculated and loss function curves have been plotted. The loss function maximum position has been used to calculate the characteristic wavenumber corresponding to the high-frequency plasmon-phonon mode frequency. Theoretical calculations have been conducted and a calibration curve has been built up for determining heavy hole concentration in p-GaAs at T = 295 K based on known characteristic wavenumber. Further matching of the optical and Hall data has been used for determining the light to heavy hole mobility ratio. This ratio proves to be in the 1.9–2.8 range which is far lower as compared with theoretical predictions in the assumption of the same scattering mechanism for light and heavy holes (at optical phonons). It has been hypothesized that the scattering mechanisms for light and heavy holes differ.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88092729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-03DOI: 10.3897/j.moem.9.2.108161
M. Silibin, D. Kiselev, S. I. Latushko, D. V. Zheludkevich, P. Sklyar, D. Karpinsky
The crystal structure, piezoelectric and magnetic properties of BiMn1-xFexO3 (x ≤ 0.4) solid solutions synthesized using different solid state reactions from a stoichiometric mixture of simple oxides at high pressures and temperatures have been studied. The structure of the composition undergoes a concentration phase transition from the monoclinic to the orthorhombic structure. The formation of the orthorhombic phase is observed at the concentration x ≈ 0.2 and is accompanied by the destruction of the dz2 orbitals of the Mn3+ ions causing the stabilization of a homogeneous magnetic state. The solid solutions containing 0.2 ≤ x ≤ 0.4 exhibit a non-zero piezoresponse and may have ferroelectric or magnetic domain structures, the ferroelectric switching voltage decreasing with an increase in the iron concentration while the remanent magnetization decreases. The highest piezoresponse signal is observed for the BiMn0.7Fe0.3O3 solid solution. The relationship between the chemical composition, type of crystal structure, piezoelectric and magnetic properties of the BiMn1-xFexO3 solid solutions has been verified. Due to the combination of magnetic and electric dipole ordering these materials show good promise for practical applications.
{"title":"Crystal structure, piezoelectric and magnetic properties of BiMn1-xFexO3 (x ≤ 0.4) solid solutions","authors":"M. Silibin, D. Kiselev, S. I. Latushko, D. V. Zheludkevich, P. Sklyar, D. Karpinsky","doi":"10.3897/j.moem.9.2.108161","DOIUrl":"https://doi.org/10.3897/j.moem.9.2.108161","url":null,"abstract":"The crystal structure, piezoelectric and magnetic properties of BiMn1-xFexO3 (x ≤ 0.4) solid solutions synthesized using different solid state reactions from a stoichiometric mixture of simple oxides at high pressures and temperatures have been studied. The structure of the composition undergoes a concentration phase transition from the monoclinic to the orthorhombic structure. The formation of the orthorhombic phase is observed at the concentration x ≈ 0.2 and is accompanied by the destruction of the dz2 orbitals of the Mn3+ ions causing the stabilization of a homogeneous magnetic state. The solid solutions containing 0.2 ≤ x ≤ 0.4 exhibit a non-zero piezoresponse and may have ferroelectric or magnetic domain structures, the ferroelectric switching voltage decreasing with an increase in the iron concentration while the remanent magnetization decreases. The highest piezoresponse signal is observed for the BiMn0.7Fe0.3O3 solid solution. The relationship between the chemical composition, type of crystal structure, piezoelectric and magnetic properties of the BiMn1-xFexO3 solid solutions has been verified. Due to the combination of magnetic and electric dipole ordering these materials show good promise for practical applications.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"78 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83926544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-22DOI: 10.3390/electronicmat4030009
M. Moreno, Arturo Torres-Sánchez, P. Rosales, A. Morales, A. Torres, Javier Flores, Luis Hernández, C. Zuniga, Carlos Ascencio, Alba Arenas
In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we studied the effect of RF power on the crystalline fraction (XC) of the deposited films, and we have correlated the XC with their optical, electrical, and structural characteristics. Different types of characterization were performed in the µc-Si:H film series. We used several techniques, such as Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM), among others. Our results show that RF power had a strong effect on the XC of the films, and there is an optimal value for producing films with the largest XC.
{"title":"Effect of the RF Power of PECVD on the Crystalline Fractions of Microcrystalline Silicon (μc-Si:H) Films and Their Structural, Optical, and Electronic Properties","authors":"M. Moreno, Arturo Torres-Sánchez, P. Rosales, A. Morales, A. Torres, Javier Flores, Luis Hernández, C. Zuniga, Carlos Ascencio, Alba Arenas","doi":"10.3390/electronicmat4030009","DOIUrl":"https://doi.org/10.3390/electronicmat4030009","url":null,"abstract":"In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH4), hydrogen (H2), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we studied the effect of RF power on the crystalline fraction (XC) of the deposited films, and we have correlated the XC with their optical, electrical, and structural characteristics. Different types of characterization were performed in the µc-Si:H film series. We used several techniques, such as Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM), among others. Our results show that RF power had a strong effect on the XC of the films, and there is an optimal value for producing films with the largest XC.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82503059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-06-16DOI: 10.3390/electronicmat4020008
J. O. Bodunrin, Duke Ateyh Oeba, S. J. Moloi
The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) techniques. The Rutherford Backscattering Spectrometry (RBS) and Energy Dispersive Spectroscopy (EDS) results showed that Fe ions are well implanted and present in the Fe-implanted Si material. The acquired results from I–V and C–V analysis showed that the diodes were well fabricated, and Fe-implantation changed the normal diode’s I–V behaviour from typical exponential to ohmic. The ohmic behaviour was described in terms of the defect levels induced by Fe in the middle of the band gap of Si. The conduction mechanism for both forward and reverse currents was presented, and the effect of Fe-implantation on the conduction mechanisms was investigated. The C–V results show that Fe generates a high density of minority carriers in p-Si, which agreed with the increase in reverse current observed in the I–V results. The diode parameters in terms of saturation current, ideality factor, Schottky barrier height, doping density, and space charge region (SCR) width were used to investigate the effect of Fe in p-Si based diode. Owing to the observed changes, which were analogous to those induced by dopants that improve the radiation hardness of silicon, it was safe to say that Fe can also assist in the quest to improve the radiation hardness of silicon using the defect-engineering method.
{"title":"Exploring the Impact of Fe-Implantation on the Electrical Characteristics of Al/p-Si Schottky Barrier Diodes","authors":"J. O. Bodunrin, Duke Ateyh Oeba, S. J. Moloi","doi":"10.3390/electronicmat4020008","DOIUrl":"https://doi.org/10.3390/electronicmat4020008","url":null,"abstract":"The effects of Fe-implantation on the electrical characteristics of Au/p-Si Schottky barrier diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) techniques. The Rutherford Backscattering Spectrometry (RBS) and Energy Dispersive Spectroscopy (EDS) results showed that Fe ions are well implanted and present in the Fe-implanted Si material. The acquired results from I–V and C–V analysis showed that the diodes were well fabricated, and Fe-implantation changed the normal diode’s I–V behaviour from typical exponential to ohmic. The ohmic behaviour was described in terms of the defect levels induced by Fe in the middle of the band gap of Si. The conduction mechanism for both forward and reverse currents was presented, and the effect of Fe-implantation on the conduction mechanisms was investigated. The C–V results show that Fe generates a high density of minority carriers in p-Si, which agreed with the increase in reverse current observed in the I–V results. The diode parameters in terms of saturation current, ideality factor, Schottky barrier height, doping density, and space charge region (SCR) width were used to investigate the effect of Fe in p-Si based diode. Owing to the observed changes, which were analogous to those induced by dopants that improve the radiation hardness of silicon, it was safe to say that Fe can also assist in the quest to improve the radiation hardness of silicon using the defect-engineering method.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"75 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77776579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-18DOI: 10.3390/electronicmat4020007
Sébastien Pecqueur, D. Vuillaume, Ž. Crljen, Ivor Lončarić, V. Zlatić
Extracting relevant data from real-world experiments is often challenging with intrinsic materials and device property dispersion, such as in organic electronics. However, multivariate data analysis can often be a mean to circumvent this and to extract more information when larger datasets are used with learning algorithms instead of physical models. Here, we report on identifying relevant information descriptors for organic electrochemical transistors (OECTs) to classify aqueous electrolytes by ionic composition. Applying periodical gate pulses at different voltage magnitudes, we extracted a reduced number of nonredundant descriptors from the rich drain-current dynamics, which provide enough information to cluster electrochemical data by principal component analysis between Ca2+-, K+-, and Na+-rich electrolytes. With six current values obtained at the appropriate time domain of the device charge/discharge transient, one can identify the cationic identity of a locally probed transient current with only a single micrometric device. Applied to OECT-based neural sensors, this analysis demonstrates the capability for a single nonselective device to retrieve the rich ionic identity of neural activity at the scale of each neuron individually when learning algorithms are applied to the device physics.
{"title":"A Neural Network to Decipher Organic Electrochemical Transistors’ Multivariate Responses for Cation Recognition","authors":"Sébastien Pecqueur, D. Vuillaume, Ž. Crljen, Ivor Lončarić, V. Zlatić","doi":"10.3390/electronicmat4020007","DOIUrl":"https://doi.org/10.3390/electronicmat4020007","url":null,"abstract":"Extracting relevant data from real-world experiments is often challenging with intrinsic materials and device property dispersion, such as in organic electronics. However, multivariate data analysis can often be a mean to circumvent this and to extract more information when larger datasets are used with learning algorithms instead of physical models. Here, we report on identifying relevant information descriptors for organic electrochemical transistors (OECTs) to classify aqueous electrolytes by ionic composition. Applying periodical gate pulses at different voltage magnitudes, we extracted a reduced number of nonredundant descriptors from the rich drain-current dynamics, which provide enough information to cluster electrochemical data by principal component analysis between Ca2+-, K+-, and Na+-rich electrolytes. With six current values obtained at the appropriate time domain of the device charge/discharge transient, one can identify the cationic identity of a locally probed transient current with only a single micrometric device. Applied to OECT-based neural sensors, this analysis demonstrates the capability for a single nonselective device to retrieve the rich ionic identity of neural activity at the scale of each neuron individually when learning algorithms are applied to the device physics.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75254844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-09DOI: 10.3390/electronicmat4020006
L. Muremi, P. Bokoro, W. Doorsamy
In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide surge arrester devices, affecting their reliability and stability. A total of 360 MOVs with similar specifications from three different manufacturers are degraded under switching surges at a constant temperature of 60 °C. The reference voltage and C-V characteristics of MOVs are measured before and after the degradation process to analyse the MOVs’ conditions. Grain barrier heights are determined from the C-V characteristics curve. An F-statistical analysis is then applied to analyse the effects of number of surges on the grain barrier height. The T-test is used to assess the statistical difference between the tested groups. Linear regression analysis is then applied to model the relationship between the number of surges and MOV grain barrier height. The results obtained show that the number of surges has a significant impact on grain barrier height. MOV grain barrier height is found to decrease as the number of surges applied increases. Regression models obtained for the tested MOV groups across all three manufacturers agree and indicate that the reduction in grain barrier height results from an increased number of surges. Regression coefficients of a developed model indicate that for one surge applied, the MOV grain barrier height decreases by 0.024, 0.055, and 0.033 eV/cm for manufacturers X, Y, and Z, respectively. Therefore, there is a linear relationship between grain barrier height and the number of applied switching surges.
{"title":"Modelling of Low-Voltage Varistors’ Responses under Slow-Front Overvoltages","authors":"L. Muremi, P. Bokoro, W. Doorsamy","doi":"10.3390/electronicmat4020006","DOIUrl":"https://doi.org/10.3390/electronicmat4020006","url":null,"abstract":"In this study, commercially low-voltage MOVs are exposed to switching surges to analyse and model the relationship between the number of surges and the MOV grain barrier height response. Repeated slow-front overvoltage transients are used to degrade the protective qualities of metal oxide surge arrester devices, affecting their reliability and stability. A total of 360 MOVs with similar specifications from three different manufacturers are degraded under switching surges at a constant temperature of 60 °C. The reference voltage and C-V characteristics of MOVs are measured before and after the degradation process to analyse the MOVs’ conditions. Grain barrier heights are determined from the C-V characteristics curve. An F-statistical analysis is then applied to analyse the effects of number of surges on the grain barrier height. The T-test is used to assess the statistical difference between the tested groups. Linear regression analysis is then applied to model the relationship between the number of surges and MOV grain barrier height. The results obtained show that the number of surges has a significant impact on grain barrier height. MOV grain barrier height is found to decrease as the number of surges applied increases. Regression models obtained for the tested MOV groups across all three manufacturers agree and indicate that the reduction in grain barrier height results from an increased number of surges. Regression coefficients of a developed model indicate that for one surge applied, the MOV grain barrier height decreases by 0.024, 0.055, and 0.033 eV/cm for manufacturers X, Y, and Z, respectively. Therefore, there is a linear relationship between grain barrier height and the number of applied switching surges.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74838757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-14DOI: 10.3897/j.moem.9.1.104830
Izatullo N. Ganiev, Jamshed H. Jayloev, Ermakhmad J. Kholov, Nargis I. Ganieva
The design of new materials intended for operation under severe conditions faces the task of rendering the materials corrosion resistant. The practical solution of this task is interrelated with the knowledge of corrosion protection of metals and alloys. The use of conducting aluminum alloys for the manufacture of thin wire may encounter specific problems. This is caused by the insufficient strength of these alloys and a small number of kinks before fracture. Aluminum alloys have been developed in recent years which even in a soft state have strength characteristics that allow them to be used as a conductive material. The E-AlMgSi (Aldrey) aluminum alloy is a well-known conducting alloy. This alloy is a heat-strengthened one, possessing good plasticity and high strength. After appropriate heat treatment this alloy acquires high electrical conductivity. Wires made from this alloy are almost exclusively used for air transmission lines. This work presents data on the corrosion behavior of calcium containing E-AlMgSi (Aldrey) aluminum conducting alloy in 0.03, 0.3 and 3.0% NaCl electrolyte medium. The anodic behavior of the alloy has been studied using a potentiostatic technique with a PI-50-1.1 potentiostat at a 2 mV/s potential sweep rate. Calcium doping of the E-AlMgSi (Aldrey) aluminum alloy increases its corrosion resistance by 15–20%. The corrosion, pitting and repassivation potentials of calcium doped alloys shift toward the positive region. An increase in the sodium chloride electrolyte concentration leads to a decrease in these potentials.
{"title":"Effect of calcium doping on the anodic behavior of E-AlMgSi (Aldrey) conducting aluminum alloy in NaCl electrolyte medium","authors":"Izatullo N. Ganiev, Jamshed H. Jayloev, Ermakhmad J. Kholov, Nargis I. Ganieva","doi":"10.3897/j.moem.9.1.104830","DOIUrl":"https://doi.org/10.3897/j.moem.9.1.104830","url":null,"abstract":"The design of new materials intended for operation under severe conditions faces the task of rendering the materials corrosion resistant. The practical solution of this task is interrelated with the knowledge of corrosion protection of metals and alloys. The use of conducting aluminum alloys for the manufacture of thin wire may encounter specific problems. This is caused by the insufficient strength of these alloys and a small number of kinks before fracture. Aluminum alloys have been developed in recent years which even in a soft state have strength characteristics that allow them to be used as a conductive material. The E-AlMgSi (Aldrey) aluminum alloy is a well-known conducting alloy. This alloy is a heat-strengthened one, possessing good plasticity and high strength. After appropriate heat treatment this alloy acquires high electrical conductivity. Wires made from this alloy are almost exclusively used for air transmission lines. This work presents data on the corrosion behavior of calcium containing E-AlMgSi (Aldrey) aluminum conducting alloy in 0.03, 0.3 and 3.0% NaCl electrolyte medium. The anodic behavior of the alloy has been studied using a potentiostatic technique with a PI-50-1.1 potentiostat at a 2 mV/s potential sweep rate. Calcium doping of the E-AlMgSi (Aldrey) aluminum alloy increases its corrosion resistance by 15–20%. The corrosion, pitting and repassivation potentials of calcium doped alloys shift toward the positive region. An increase in the sodium chloride electrolyte concentration leads to a decrease in these potentials.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135085981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. Ganiev, J. H. Jayloev, E. J. Kholov, Nargis I. Ganieva
The design of new materials intended for operation under severe conditions faces the task of rendering the materials corrosion resistant. The practical solution of this task is interrelated with the knowledge of corrosion protection of metals and alloys. The use of conducting aluminum alloys for the manufacture of thin wire may encounter specific problems. This is caused by the insufficient strength of these alloys and a small number of kinks before fracture. Aluminum alloys have been developed in recent years which even in a soft state have strength characteristics that allow them to be used as a conductive material. The E-AlMgSi (Aldrey) aluminum alloy is a well-known conducting alloy. This alloy is a heat-strengthened one, possessing good plasticity and high strength. After appropriate heat treatment this alloy acquires high electrical conductivity. Wires made from this alloy are almost exclusively used for air transmission lines. This work presents data on the corrosion behavior of calcium containing E-AlMgSi (Aldrey) aluminum conducting alloy in 0.03, 0.3 and 3.0% NaCl electrolyte medium. The anodic behavior of the alloy has been studied using a potentiostatic technique with a PI-50-1.1 potentiostat at a 2 mV/s potential sweep rate. Calcium doping of the E-AlMgSi (Aldrey) aluminum alloy increases its corrosion resistance by 15–20%. The corrosion, pitting and repassivation potentials of calcium doped alloys shift toward the positive region. An increase in the sodium chloride electrolyte concentration leads to a decrease in these potentials.
{"title":"Effect of calcium doping on the anodic behavior of E-AlMgSi (Aldrey) conducting aluminum alloy in NaCl electrolyte medium","authors":"I. Ganiev, J. H. Jayloev, E. J. Kholov, Nargis I. Ganieva","doi":"10.3897/j.moem.9.104830","DOIUrl":"https://doi.org/10.3897/j.moem.9.104830","url":null,"abstract":"The design of new materials intended for operation under severe conditions faces the task of rendering the materials corrosion resistant. The practical solution of this task is interrelated with the knowledge of corrosion protection of metals and alloys. The use of conducting aluminum alloys for the manufacture of thin wire may encounter specific problems. This is caused by the insufficient strength of these alloys and a small number of kinks before fracture. Aluminum alloys have been developed in recent years which even in a soft state have strength characteristics that allow them to be used as a conductive material. The E-AlMgSi (Aldrey) aluminum alloy is a well-known conducting alloy. This alloy is a heat-strengthened one, possessing good plasticity and high strength. After appropriate heat treatment this alloy acquires high electrical conductivity. Wires made from this alloy are almost exclusively used for air transmission lines.\u0000 This work presents data on the corrosion behavior of calcium containing E-AlMgSi (Aldrey) aluminum conducting alloy in 0.03, 0.3 and 3.0% NaCl electrolyte medium. The anodic behavior of the alloy has been studied using a potentiostatic technique with a PI-50-1.1 potentiostat at a 2 mV/s potential sweep rate. Calcium doping of the E-AlMgSi (Aldrey) aluminum alloy increases its corrosion resistance by 15–20%. The corrosion, pitting and repassivation potentials of calcium doped alloys shift toward the positive region. An increase in the sodium chloride electrolyte concentration leads to a decrease in these potentials.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79837167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-12DOI: 10.3390/electronicmat4020005
Jinwei Fan, Zhuoqun Wang, Haoge Cheng, Dingguan Wang, A. Wee
Covalent organic framework nanosheets (COF nanosheets) are two-dimensional crystalline porous polymers with in-plane covalent bonds and out-of-plane Van der Waals forces. Owing to the customizable structure, chemical modification, and ultra-high porosity, COF nanosheets show many fascinating properties unique to traditional two-dimensional materials, and have shown potential applications in gas separation, sensors, electronic, and optoelectronic devices. This minireview aims to illustrate recent progress on two-dimensional covalent organic framework nanosheets, from two aspects of on-surface synthesis and potential applications. We first review the synthesis of COF nanosheets at the gas–solid interface. On-surface synthesis under ultrahigh vacuum and on-surface synthesis under vapor are highlighted. In addition, we also review the liquid–solid interface synthesis of COF nanosheets at various substrates, i.e., both crystalline and amorphous substrates. Beyond the synthesis, we highlight state-of-the-art applications of the COF nanosheets, particularly in charge transport, chemical sensors, and gas separation.
{"title":"On-Surface Synthesis and Applications of 2D Covalent Organic Framework Nanosheets","authors":"Jinwei Fan, Zhuoqun Wang, Haoge Cheng, Dingguan Wang, A. Wee","doi":"10.3390/electronicmat4020005","DOIUrl":"https://doi.org/10.3390/electronicmat4020005","url":null,"abstract":"Covalent organic framework nanosheets (COF nanosheets) are two-dimensional crystalline porous polymers with in-plane covalent bonds and out-of-plane Van der Waals forces. Owing to the customizable structure, chemical modification, and ultra-high porosity, COF nanosheets show many fascinating properties unique to traditional two-dimensional materials, and have shown potential applications in gas separation, sensors, electronic, and optoelectronic devices. This minireview aims to illustrate recent progress on two-dimensional covalent organic framework nanosheets, from two aspects of on-surface synthesis and potential applications. We first review the synthesis of COF nanosheets at the gas–solid interface. On-surface synthesis under ultrahigh vacuum and on-surface synthesis under vapor are highlighted. In addition, we also review the liquid–solid interface synthesis of COF nanosheets at various substrates, i.e., both crystalline and amorphous substrates. Beyond the synthesis, we highlight state-of-the-art applications of the COF nanosheets, particularly in charge transport, chemical sensors, and gas separation.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84592932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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