Pub Date : 2022-12-19DOI: 10.3897/j.moem.8.4.99385
S. Knyazev, A. V. Kudrya, N. Y. Komarovskiy, Y. Parkhomenko, E. V. Molodtsova, Vyacheslav V. Yushchuk
The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconductor single crystals which determine their performance as integrated circuit components. Therefore studies of the mechanisms of dislocation nucleation, slip and distribution are among the most important tasks which make researchers face the choice of suitable analytical methods. This work is an overview of advanced methods of studying and evaluating dislocation density in single crystals. Brief insight has been given on the main advantages and drawbacks of the methods overviewed and experimental data have been presented. The selective etching method (optical light microscopy) has become the most widely used one and in its conventional setup is quite efficient in the identification of scrap defects and in dislocation density evaluation by number of etch pits per vision area. Since the introduction of digital light microscopy and the related transfer from image analysis to pixel intensity matrices and measurement automation, it has become possible to implement quantitative characterization for the entire cross-section of single crystal wafers and analyze structural imperfection distribution pattern. X-ray diffraction is conventionally used for determination of crystallographic orientation but it also allows evaluating dislocation density by rocking curve broadening in double-crystal setup. Secondary electron scanning electron microscopy and atomic force microscopy allow differentiating etch patterns by origin and studying their geometry in detail. Transmission electron microscopy and induced current method allow obtaining micrographs of discrete dislocations but require labor-consuming preparation of experimental specimens. X-ray topography allows measuring bulky samples and also has high resolution but is hardly suitable for industry-wide application due to the high power consumption of measurements. Digital image processing broadens the applicability range of basic dislocation structure analytical methods in materials science and increases the authenticity of experimental results.
{"title":"Methods of dislocation structure characterization in A IIIB V semiconductor single crystals","authors":"S. Knyazev, A. V. Kudrya, N. Y. Komarovskiy, Y. Parkhomenko, E. V. Molodtsova, Vyacheslav V. Yushchuk","doi":"10.3897/j.moem.8.4.99385","DOIUrl":"https://doi.org/10.3897/j.moem.8.4.99385","url":null,"abstract":"The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconductor single crystals which determine their performance as integrated circuit components. Therefore studies of the mechanisms of dislocation nucleation, slip and distribution are among the most important tasks which make researchers face the choice of suitable analytical methods. This work is an overview of advanced methods of studying and evaluating dislocation density in single crystals. Brief insight has been given on the main advantages and drawbacks of the methods overviewed and experimental data have been presented. The selective etching method (optical light microscopy) has become the most widely used one and in its conventional setup is quite efficient in the identification of scrap defects and in dislocation density evaluation by number of etch pits per vision area. Since the introduction of digital light microscopy and the related transfer from image analysis to pixel intensity matrices and measurement automation, it has become possible to implement quantitative characterization for the entire cross-section of single crystal wafers and analyze structural imperfection distribution pattern. X-ray diffraction is conventionally used for determination of crystallographic orientation but it also allows evaluating dislocation density by rocking curve broadening in double-crystal setup. Secondary electron scanning electron microscopy and atomic force microscopy allow differentiating etch patterns by origin and studying their geometry in detail. Transmission electron microscopy and induced current method allow obtaining micrographs of discrete dislocations but require labor-consuming preparation of experimental specimens. X-ray topography allows measuring bulky samples and also has high resolution but is hardly suitable for industry-wide application due to the high power consumption of measurements.\u0000 Digital image processing broadens the applicability range of basic dislocation structure analytical methods in materials science and increases the authenticity of experimental results.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82391172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-19DOI: 10.3897/j.moem.8.4.98919
A. V. Sabluk, A. Basharin
Since the early 1980s the terahertz range (0.1 to 10 THz) attracts permanent attention of fundamental and applied science. Due to its unique properties terahertz radiation is used in a wide range of applications such as spectroscopy, non-destructive defectoscopy and security systems. The design of high-efficiency terahertz absorbers and converters is currently the main task in the development of terahertz technologies. In this work a frequency selective high-Q metamaterial is used for the fabrication of a terahertz-to-infrared converter. The converter consists of a metamaterial-based terahertz absorber coated with a micrometer-thick graphite layer that reemits the absorbed energy in the infrared range. We have carried out electrodynamic and the related thermodynamic calculations of the suggested radiation converter. Numerical simulations yield an electromagnetic radiation absorption coefficient of 99.998% and an analytically calculated converter efficiency of 93.8%. Thanks to these advanced parameters suggested terahertz converter can find it’s applications in a wide range of transportation security inspection and defectoscopy tasks.
{"title":"Metamaterial-based terahertz converter","authors":"A. V. Sabluk, A. Basharin","doi":"10.3897/j.moem.8.4.98919","DOIUrl":"https://doi.org/10.3897/j.moem.8.4.98919","url":null,"abstract":"Since the early 1980s the terahertz range (0.1 to 10 THz) attracts permanent attention of fundamental and applied science. Due to its unique properties terahertz radiation is used in a wide range of applications such as spectroscopy, non-destructive defectoscopy and security systems. The design of high-efficiency terahertz absorbers and converters is currently the main task in the development of terahertz technologies. In this work a frequency selective high-Q metamaterial is used for the fabrication of a terahertz-to-infrared converter. The converter consists of a metamaterial-based terahertz absorber coated with a micrometer-thick graphite layer that reemits the absorbed energy in the infrared range. We have carried out electrodynamic and the related thermodynamic calculations of the suggested radiation converter. Numerical simulations yield an electromagnetic radiation absorption coefficient of 99.998% and an analytically calculated converter efficiency of 93.8%. Thanks to these advanced parameters suggested terahertz converter can find it’s applications in a wide range of transportation security inspection and defectoscopy tasks.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75764657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-19DOI: 10.3897/j.moem.8.4.100653
O. Boiprav, Natalia V. Bogush
An improved technology of frequency-selective electromagnetic shields has been considered. The technology has been improved by embedding classic Archimedean helical elements made from foiled materials into the bulk of the shields for the improvement of the frequency-selective performance of the shields and pinning of these elements in the bulk of the shields by means of fusion bonding. These design features provide for the main advantage of the improved technology in comparison with counterparts, i.e., lower time consumption. The technology has been improved in the following two aspects: 1) identification of helical element parameters providing for the greatest energy loss of the UHF electromagnetic radiation interacting with the helical elements; 2) identification of the optimum helical element arrangement in the shield bulk providing for the smallest transmission and reflection coefficient of the UHF electromagnetic radiation by the shields. Technology improvement in accordance with the former of the above aspects has been achieved based on analysis of publications dealing with mathematical simulation and study of the parameters of UHF electromagnetic radiation transmission by planar helical antennas. Technology improvement in accordance with the latter aspect has been achieved based on experimental data. Test shields have been fabricated with specifically arranged embedded helical elements, and comparison has been made between the UHF electromagnetic radiation transmission and reflection coefficients of the shields. Shields fabricated in accordance with the improved technology suggested herein show good promise for the electromagnetic noise protection of electronic devices.
{"title":"Improved technology of frequency-selective UHF electromagnetic shields containing helical elements","authors":"O. Boiprav, Natalia V. Bogush","doi":"10.3897/j.moem.8.4.100653","DOIUrl":"https://doi.org/10.3897/j.moem.8.4.100653","url":null,"abstract":"An improved technology of frequency-selective electromagnetic shields has been considered. The technology has been improved by embedding classic Archimedean helical elements made from foiled materials into the bulk of the shields for the improvement of the frequency-selective performance of the shields and pinning of these elements in the bulk of the shields by means of fusion bonding. These design features provide for the main advantage of the improved technology in comparison with counterparts, i.e., lower time consumption. The technology has been improved in the following two aspects: 1) identification of helical element parameters providing for the greatest energy loss of the UHF electromagnetic radiation interacting with the helical elements; 2) identification of the optimum helical element arrangement in the shield bulk providing for the smallest transmission and reflection coefficient of the UHF electromagnetic radiation by the shields. Technology improvement in accordance with the former of the above aspects has been achieved based on analysis of publications dealing with mathematical simulation and study of the parameters of UHF electromagnetic radiation transmission by planar helical antennas. Technology improvement in accordance with the latter aspect has been achieved based on experimental data. Test shields have been fabricated with specifically arranged embedded helical elements, and comparison has been made between the UHF electromagnetic radiation transmission and reflection coefficients of the shields. Shields fabricated in accordance with the improved technology suggested herein show good promise for the electromagnetic noise protection of electronic devices.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81466339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-09DOI: 10.3390/electronicmat3040029
Pargam Vashishtha, Pukhraj Prajapat, Lalit N. Goswami, Aditya V. Yadav, A. Pandey, G. Gupta
Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN growth led to the formation of GaN nanopyramidal and nanowax/wane structures. These grown GaN/AlN/Si heterostructures were utilized to develop photodetectors in a metal–semiconductor–metal geometry format. The performance of these fabricated optoelectronic devices was examined under ultraviolet illumination (UVA), where the GaN nano-obelisks-based device attained the highest responsivity of 118 AW−1. Under UVA (325 nm) illumination, the designed device exhibited a high detectivity of 1 × 1010 Jones, noise equivalent power of 1 × 10−12 WHz−1/2, and external quantum efficiency of 45,000%. The analysis revealed that the quality of the AlN buffer layer significantly improved the optoelectronic performance of the device.
{"title":"Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector","authors":"Pargam Vashishtha, Pukhraj Prajapat, Lalit N. Goswami, Aditya V. Yadav, A. Pandey, G. Gupta","doi":"10.3390/electronicmat3040029","DOIUrl":"https://doi.org/10.3390/electronicmat3040029","url":null,"abstract":"Epitaxial GaN nanostructures are developed, and the influence of the AlN buffer layer (temperature modulation) on material characteristics and optoelectronic device application is assessed. The AlN buffer layer was grown on a Si (111) substrate at varying temperatures (770–830 °C), followed by GaN growth using plasma-assisted molecular beam epitaxy. The investigation revealed that the comparatively lower temperature AlN buffer layer was responsible for stress and lattice strain relaxation and was realized as the GaN nano-obelisk structures. Contrarily, the increased temperature of the AlN growth led to the formation of GaN nanopyramidal and nanowax/wane structures. These grown GaN/AlN/Si heterostructures were utilized to develop photodetectors in a metal–semiconductor–metal geometry format. The performance of these fabricated optoelectronic devices was examined under ultraviolet illumination (UVA), where the GaN nano-obelisks-based device attained the highest responsivity of 118 AW−1. Under UVA (325 nm) illumination, the designed device exhibited a high detectivity of 1 × 1010 Jones, noise equivalent power of 1 × 10−12 WHz−1/2, and external quantum efficiency of 45,000%. The analysis revealed that the quality of the AlN buffer layer significantly improved the optoelectronic performance of the device.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84980599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.3390/electronicmat3040028
G. Boni, L. Filip, C. Radu, C. Chirila, I. Pasuk, M. Botea, I. Pintilie, L. Pintilie
Electrocaloric effect is the adiabatic temperature change in a dielectric material when an electric field is applied or removed, and it can be considered as an alternative refrigeration method. Materials with ferroelectric order exhibit large temperature variations in the vicinity of a phase transition, while antiferroelectrics and relaxors may exhibit a negative electrocaloric effect. In this study, the temperature variation in polarization was investigated for epitaxial ferroelectric thin film structures based on PbZrTiO3 materials in simple or complex multilayered structures. We propose the intriguing possibility of a giant negative electrocaloric effect (ΔT = −3.7 K at room temperature and ΔT = −5.5 K at 370 K) in a simple epitaxial Pb(ZrTi)O3 capacitor. Furthermore, it was shown that abnormal temperature variation in polarization is dependent on the non-FE component introduced in a multilayered structure. No significant variation in polarization with temperature was obtained for PZT/STON multilayered structures around room temperature. However, for PZT/BST or PZT/Nb2O5 multilayers, an abnormal temperature variation in polarization was revealed, which was similar to a simple PZT layer. The giant and negative ∆T values were attributed to internal fields and defects formed due to the large depolarization fields when the high polarization of the FE component was not fully compensated either by the electrodes or by the interface with an insulator layer. The presented results make Pb(ZrTi)O3-based structures promising for cooling applications operating near room temperature.
{"title":"Indirect Evaluation of the Electrocaloric Effect in PbZrTiO3 (20/80)-Based Epitaxial Thin Film Structures","authors":"G. Boni, L. Filip, C. Radu, C. Chirila, I. Pasuk, M. Botea, I. Pintilie, L. Pintilie","doi":"10.3390/electronicmat3040028","DOIUrl":"https://doi.org/10.3390/electronicmat3040028","url":null,"abstract":"Electrocaloric effect is the adiabatic temperature change in a dielectric material when an electric field is applied or removed, and it can be considered as an alternative refrigeration method. Materials with ferroelectric order exhibit large temperature variations in the vicinity of a phase transition, while antiferroelectrics and relaxors may exhibit a negative electrocaloric effect. In this study, the temperature variation in polarization was investigated for epitaxial ferroelectric thin film structures based on PbZrTiO3 materials in simple or complex multilayered structures. We propose the intriguing possibility of a giant negative electrocaloric effect (ΔT = −3.7 K at room temperature and ΔT = −5.5 K at 370 K) in a simple epitaxial Pb(ZrTi)O3 capacitor. Furthermore, it was shown that abnormal temperature variation in polarization is dependent on the non-FE component introduced in a multilayered structure. No significant variation in polarization with temperature was obtained for PZT/STON multilayered structures around room temperature. However, for PZT/BST or PZT/Nb2O5 multilayers, an abnormal temperature variation in polarization was revealed, which was similar to a simple PZT layer. The giant and negative ∆T values were attributed to internal fields and defects formed due to the large depolarization fields when the high polarization of the FE component was not fully compensated either by the electrodes or by the interface with an insulator layer. The presented results make Pb(ZrTi)O3-based structures promising for cooling applications operating near room temperature.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72917761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-31DOI: 10.3390/electronicmat3040027
M. Z. Toe, W. K. Tan, H. Muto, G. Kawamura, A. Matsuda, K. A. Yaacob, S. Pung
Aerosol deposition (AD) is a simple, dry raw-powder deposition process in which the targeted film is formed by direct bombardment of accelerated starting powder onto the substrate surface at room temperature. Despite the increased interest in AD film formation, no work has been completed to systematically investigate the formation of dense zinc oxide (ZnO) films using the AD method and their optical properties. Therefore, this study was carried out to investigate the effect of AD gas flow rate on the formation of AD films and the optical properties of aerosol-deposited ZnO films. ZnO films with nanosized (<40 nm) crystallites were successfully deposited on FTO substrates at room temperature. A dense and uniform layer of aerosol-deposited ZnO films with a roughened surface was obtained without subsequent heat treatment. With the increase in the AD gas flow rate, the crystal size and the AD film’s thickness were reduced. The Raman spectroscopy verified that the thin film was of a ZnO wurtzite structure. The room temperature photoluminescence of the ZnO thin film produced strong visible emissions. The findings of this work demonstrated that AD can be an alternative technique for the rapid deposition of dense and thick ZnO films for optoelectronic applications.
{"title":"Effect of Carrier Gas Flow Rates on the Structural and Optical Properties of ZnO Films Deposited Using an Aerosol Deposition Technique","authors":"M. Z. Toe, W. K. Tan, H. Muto, G. Kawamura, A. Matsuda, K. A. Yaacob, S. Pung","doi":"10.3390/electronicmat3040027","DOIUrl":"https://doi.org/10.3390/electronicmat3040027","url":null,"abstract":"Aerosol deposition (AD) is a simple, dry raw-powder deposition process in which the targeted film is formed by direct bombardment of accelerated starting powder onto the substrate surface at room temperature. Despite the increased interest in AD film formation, no work has been completed to systematically investigate the formation of dense zinc oxide (ZnO) films using the AD method and their optical properties. Therefore, this study was carried out to investigate the effect of AD gas flow rate on the formation of AD films and the optical properties of aerosol-deposited ZnO films. ZnO films with nanosized (<40 nm) crystallites were successfully deposited on FTO substrates at room temperature. A dense and uniform layer of aerosol-deposited ZnO films with a roughened surface was obtained without subsequent heat treatment. With the increase in the AD gas flow rate, the crystal size and the AD film’s thickness were reduced. The Raman spectroscopy verified that the thin film was of a ZnO wurtzite structure. The room temperature photoluminescence of the ZnO thin film produced strong visible emissions. The findings of this work demonstrated that AD can be an alternative technique for the rapid deposition of dense and thick ZnO films for optoelectronic applications.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85687003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-20DOI: 10.3897/j.moem.8.3.98706
L. V. Tarala, A. Kravtsov, O. Chapura, V. Tarala, D. Vakalov, F. Malyavin, S. Kuznetsov, V. Lapin, L. Kozhitov, A. Popkova
The aim of this work was to study the effect of vacuum sintering conditions and cerium concentration on the optical, luminescent and thermal properties of yttrium-aluminum garnet based ceramics doped with Се3+ cations. Series of ceramic powders were synthesized and samples of luminescent ceramics having the composition Y3-хСехAl5O12 were synthesized where x was in the range 0.01 to 0.025 f.u. We show that the phase composition and grain size distribution of the ceramic powders do not depend on cerium concentration. Without sintering additives, an increase in vacuum sintering temperature from 1675 to 1800 °C leads to an increase in the optical transmittance of luminescent ceramic specimens from 5 to 55% at a 540 nm wavelength and an increase in the thermal conductivity of the samples from 8.4 to 9.5 W/(m ∙ K). It was found that an increase in cerium concentration leads to a shift of the luminescent band peak from 535 to 545 nm where as the width of the luminescent band decreases with an increase in vacuum sintering temperature from 1675 to 1725 °C.
{"title":"Effect of vacuum sintering conditions on the properties of Y3Al5O12 : Ce luminescent ceramics","authors":"L. V. Tarala, A. Kravtsov, O. Chapura, V. Tarala, D. Vakalov, F. Malyavin, S. Kuznetsov, V. Lapin, L. Kozhitov, A. Popkova","doi":"10.3897/j.moem.8.3.98706","DOIUrl":"https://doi.org/10.3897/j.moem.8.3.98706","url":null,"abstract":"The aim of this work was to study the effect of vacuum sintering conditions and cerium concentration on the optical, luminescent and thermal properties of yttrium-aluminum garnet based ceramics doped with Се3+ cations. Series of ceramic powders were synthesized and samples of luminescent ceramics having the composition Y3-хСехAl5O12 were synthesized where x was in the range 0.01 to 0.025 f.u. We show that the phase composition and grain size distribution of the ceramic powders do not depend on cerium concentration. Without sintering additives, an increase in vacuum sintering temperature from 1675 to 1800 °C leads to an increase in the optical transmittance of luminescent ceramic specimens from 5 to 55% at a 540 nm wavelength and an increase in the thermal conductivity of the samples from 8.4 to 9.5 W/(m ∙ K). It was found that an increase in cerium concentration leads to a shift of the luminescent band peak from 535 to 545 nm where as the width of the luminescent band decreases with an increase in vacuum sintering temperature from 1675 to 1725 °C.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85665615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-14DOI: 10.3897/j.moem.8.3.91521
Barham K. Rahim, F. Muhammadsharif, S. Saeed, Kamal A. Ketuly
In this paper, the optical properties and optoelectronic parameters of two newly synthesized polymers forming a donor : acceptor (D : A) binary system are investigated, followed by their subsequent doping with Sudan dye to obtain a ternary system. The donor polymer is P(TER-CO-TRI), while the acceptor is poly(5-hydroxy-L-Tryptophane). A cost-effective solution-processing was carried out to obtain different binary and ternary composites with concentration of 0.5 mg/ml. Optical absorption spectroscopy was used to measure the optical response and optoelectronic parameters, while FTIR and cyclic voltammetry were used to assess the structure and molecular energy levels of the polymers. The results revealed that the non-dispersive refractive index and energy gap of binary D : A was decreased from 1.56 to 1.52 eV and from 2.84 to 2.10 eV, respectively, when it was doped with Sudan dye. It was concluded that with the help of doping process, different values of energy band gap, refractive index, dielectric constant, and optical conductivity are achieved. This tuning achievement of the optoelectronic parameters is crucial in determining the possible applications of these materials in the organic electronics, photodiodes and photovoltaic devices.
本文研究了两种新合成的聚合物的光学性质和光电子参数，形成了一个供体:受体(D: a)二元体系，然后用苏丹红染料掺杂得到了一个三元体系。给体聚合物为P(TER-CO-TRI)，受体为聚(5-羟基- l -色氨酸)。采用高性价比的溶液处理方法，得到浓度为0.5 mg/ml的二、三元复合材料。采用光吸收光谱法测量聚合物的光学响应和光电子参数，采用FTIR和循环伏安法评估聚合物的结构和分子能级。结果表明，掺杂苏丹红染料后，二元D: A的非色散折射率和能隙分别从1.56 eV和2.84 eV降低到1.52 eV和2.10 eV。结果表明，在掺杂过程的帮助下，可以获得不同的能带隙、折射率、介电常数和光电导率。这一光电参数的调谐成就对于确定这些材料在有机电子、光电二极管和光伏器件中的可能应用至关重要。
{"title":"A study on the optical properties and optoelectronic parameters of Sudan dye doped poly(5-hydroxy-L-tryptophane) and P(TER-CO-TRI) polymers","authors":"Barham K. Rahim, F. Muhammadsharif, S. Saeed, Kamal A. Ketuly","doi":"10.3897/j.moem.8.3.91521","DOIUrl":"https://doi.org/10.3897/j.moem.8.3.91521","url":null,"abstract":"In this paper, the optical properties and optoelectronic parameters of two newly synthesized polymers forming a donor : acceptor (D : A) binary system are investigated, followed by their subsequent doping with Sudan dye to obtain a ternary system. The donor polymer is P(TER-CO-TRI), while the acceptor is poly(5-hydroxy-L-Tryptophane). A cost-effective solution-processing was carried out to obtain different binary and ternary composites with concentration of 0.5 mg/ml. Optical absorption spectroscopy was used to measure the optical response and optoelectronic parameters, while FTIR and cyclic voltammetry were used to assess the structure and molecular energy levels of the polymers. The results revealed that the non-dispersive refractive index and energy gap of binary D : A was decreased from 1.56 to 1.52 eV and from 2.84 to 2.10 eV, respectively, when it was doped with Sudan dye. It was concluded that with the help of doping process, different values of energy band gap, refractive index, dielectric constant, and optical conductivity are achieved. This tuning achievement of the optoelectronic parameters is crucial in determining the possible applications of these materials in the organic electronics, photodiodes and photovoltaic devices.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"47 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80752658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-14DOI: 10.3897/j.moem.8.3.97596
V. N. Abryutin, I. I. Maronchuk, N. A. Potolokov, D. Sanikovich, N. Cherkashina
Simulation data have been presented on a process of deep refinement of tellurium based on Authors-developed refinement technique implemented through analysis of the process unit thermodynamical condition using Flow Simulation software, from SolidWorks software product. The technique put forward herein has been implemented in a plant comprising a vertical air-tight reaction chamber arranged inside a multi-zone thermal unit and executing a sequence of refinement stages which use different techniques and are integrated in a single process. The experimental data which have been the basis for calculations have allowed one to determine the boundary conditions of the mathematical model taking into account previous operation experience of the software product used. Temperature profile calculation has been carried out taking into account all the types of heat transfer in the system, the weight / dimensions parameters of system units and the physicochemical properties of refined tellurium, materials of equipment fittings and reactor media. The temperature modes of the process stages have been accepted as the boundary conditions for the thermal calculations, with temperatures being measured at equipment fitting locations at which temperature gages connected with a PID controller have been installed. The simulation of specific refinement process conditions allowed process modes and equipment fitting component design to be corrected. We have developed and produced test models of process and imitation equipment. Analysis of the thermal fields for the final model has shown good agreement with the mathematical model. Equipment upgrading and process parameter improvement on the basis of the simulation results have allowed T-u Grade tellurium (99.95 wt.%) refinement to a 99.99992 wt.% purity by 30 main impurities in the course of physical experiments, the product yield being at least 60%.
{"title":"Deep refinement of tellurium: equipment and process improvement through process simulation","authors":"V. N. Abryutin, I. I. Maronchuk, N. A. Potolokov, D. Sanikovich, N. Cherkashina","doi":"10.3897/j.moem.8.3.97596","DOIUrl":"https://doi.org/10.3897/j.moem.8.3.97596","url":null,"abstract":"Simulation data have been presented on a process of deep refinement of tellurium based on Authors-developed refinement technique implemented through analysis of the process unit thermodynamical condition using Flow Simulation software, from SolidWorks software product. The technique put forward herein has been implemented in a plant comprising a vertical air-tight reaction chamber arranged inside a multi-zone thermal unit and executing a sequence of refinement stages which use different techniques and are integrated in a single process. The experimental data which have been the basis for calculations have allowed one to determine the boundary conditions of the mathematical model taking into account previous operation experience of the software product used. Temperature profile calculation has been carried out taking into account all the types of heat transfer in the system, the weight / dimensions parameters of system units and the physicochemical properties of refined tellurium, materials of equipment fittings and reactor media. The temperature modes of the process stages have been accepted as the boundary conditions for the thermal calculations, with temperatures being measured at equipment fitting locations at which temperature gages connected with a PID controller have been installed. The simulation of specific refinement process conditions allowed process modes and equipment fitting component design to be corrected. We have developed and produced test models of process and imitation equipment. Analysis of the thermal fields for the final model has shown good agreement with the mathematical model. Equipment upgrading and process parameter improvement on the basis of the simulation results have allowed T-u Grade tellurium (99.95 wt.%) refinement to a 99.99992 wt.% purity by 30 main impurities in the course of physical experiments, the product yield being at least 60%.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73730787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-08DOI: 10.3390/electronicmat3040026
Yusuke Yamada
Wireless energy harvesting, a technique to generate direct current (DC) electricity from ambient wireless signals, has recently been featured as a potential solution to reduce the battery size, extend the battery life, or replace batteries altogether for wearable electronics. Unlike other energy harvesting techniques, wireless energy harvesting has a prominent advantage of ceaseless availability of ambient signals, but the common form of technology involves a major challenge of limited output power because of a relatively low ambient energy density. Moreover, the archetypal wireless energy harvesters are made of printed circuit boards (PCBs), which are rigid, bulky, and heavy, and hence they are not eminently suitable for body-worn applications from both aesthetic and comfort points of view. In order to overcome these limitations, textile-based wireless energy harvesting architectures have been proposed in the past decade. Being made of textile materials, this new class of harvesters can be seamlessly integrated into clothing in inherently aesthetic and comfortable forms. In addition, since clothing offers a large surface area, multiple harvesting units can be deployed to enhance the output power. In view of these unique and irreplaceable benefits, this paper reviews key recent progress in textile-based wireless energy harvesting strategies for powering body-worn electronics. Comparisons with other power harvesting technologies, historical development, fundamental principles of operation and techniques for fabricating textile-based wireless power harvesters are first recapitulated, followed by a review on the principal advantages, challenges, and opportunities. It is one of the purposes of this paper to peruse the current state-of-the-art and build a scientific knowledge base to aid further advancement of power solutions for wearable electronics.
{"title":"Textile Materials for Wireless Energy Harvesting","authors":"Yusuke Yamada","doi":"10.3390/electronicmat3040026","DOIUrl":"https://doi.org/10.3390/electronicmat3040026","url":null,"abstract":"Wireless energy harvesting, a technique to generate direct current (DC) electricity from ambient wireless signals, has recently been featured as a potential solution to reduce the battery size, extend the battery life, or replace batteries altogether for wearable electronics. Unlike other energy harvesting techniques, wireless energy harvesting has a prominent advantage of ceaseless availability of ambient signals, but the common form of technology involves a major challenge of limited output power because of a relatively low ambient energy density. Moreover, the archetypal wireless energy harvesters are made of printed circuit boards (PCBs), which are rigid, bulky, and heavy, and hence they are not eminently suitable for body-worn applications from both aesthetic and comfort points of view. In order to overcome these limitations, textile-based wireless energy harvesting architectures have been proposed in the past decade. Being made of textile materials, this new class of harvesters can be seamlessly integrated into clothing in inherently aesthetic and comfortable forms. In addition, since clothing offers a large surface area, multiple harvesting units can be deployed to enhance the output power. In view of these unique and irreplaceable benefits, this paper reviews key recent progress in textile-based wireless energy harvesting strategies for powering body-worn electronics. Comparisons with other power harvesting technologies, historical development, fundamental principles of operation and techniques for fabricating textile-based wireless power harvesters are first recapitulated, followed by a review on the principal advantages, challenges, and opportunities. It is one of the purposes of this paper to peruse the current state-of-the-art and build a scientific knowledge base to aid further advancement of power solutions for wearable electronics.","PeriodicalId":18610,"journal":{"name":"Modern Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83813206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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