Nanotechnology最新文献

Ion implantation is widely utilised for the modification of inorganic semiconductors; however, the technique has not been extensively applied to lead halide perovskites. In this report, we demonstrate the modification of the optical properties of caesium lead bromide (CsPbBr₃) thin films via noble gas ion implantation. We observed that the photoluminescence (PL) lifetimes of CsPbBr₃thin films can be doubled by low fluences (<1 × 10¹⁴at·cm^-2) of ion implantation with an acceleration voltage of 20 keV. We attribute this phenomenon to ion beam induced shallow minority charge carrier trapping induced by nuclear stopping, dominant by heavy noble gases (Ar, Xe). Simultaneously, the PL quantum yield (PLQY) is altered during noble gas ion implantation inversely correlates with the electronic stopping power of the implanted element, hence Ar implantation reduces the PLQY, while Ne even causes a PLQY enhancement. These results thus provide a guide to separate the effect of nuclear and electronic damage during ion implantation into halide perovskites.

In the extreme ultraviolet lithography (EUVL) process, extreme ultraviolet (EUV) pellicles serve as thin, transparent membranes that shield the photomask (reticle) from particle contamination, thereby preserving photomask pattern integrity, reducing chip failure risks, and enhancing production yields. The production of EUV pellicles is highly challenging due to their mechanical fragility at nanometer-scale thicknesses and the need to endure the rigorous conditions of the EUVL environment, which include high temperatures and hydrogen radicals. Consequently, extensive research has been conducted on a variety of materials, such as carbon-based and silicon-based substances, for the development of EUV pellicles. This study explores the feasibility of implementing metal silicide (MeSi_x) pellicles for high-power EUVL applications. We successfully fabricated MeSi_xpellicles in two dimensions: a 10 mm × 10 mm sample and a full-size 110 mm × 144 mm pellicle. We then evaluated their optical, mechanical, thermal, and chemical properties, as well as their lifespan. The pellicles demonstrated over 90% transmittance and less than 0.04% reflectance. The films exhibited a deflection of 300μm under a 2 Pa differential pressure and an ultimate tensile strength exceeding 2 GPa. The thermal emissivity was measured at 0.3. Additionally, the durability of the pellicles was validated through exposure to 20,000 wafers using a 400 W EUV power (offline test: 20 W cm^-2). The transmittance variations of the pellicles were evaluated by comparing the measurements obtained before and after exposure to 400 W EUV power.

Tribological printing is emerging as a promising technique for micro/nano manufacturing. A significant challenge is enhancing efficiency and minimizing the need for thousands of sliding cycles to create nano- or microstructures (ACS Appl. Mater. Inter. 2018;10:40335-47, Nanotechnology 2019;30:95302). This study presents a rapid approach for forming Cu microwires on Si wafers through a friction method during the evaporation of an ethanol-based lubricant containing Cu nanoparticles. The preparation time is influenced by the volume of the lubricant added, with optimal conditions reducing the time to 300 seconds (600 sliding cycles) for producing Cu microwires with a thickness of 200 nm. Key aspects include the lubricating effect of ethanol on the friction pairs and the role of ethanol evaporation in the growth of Cu microwires. Successful formation requires a careful balance between microwire thickening and wear removal. The resulting Cu microwires demonstrate mechanical and electrical properties that make them suitable as micro conductors. This work provides a novel approach for fabricating conductive microstructures on Si surfaces and other curved surfaces, offering potential applications in microelectronics and sensor technologies.

The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications. .

We investigated the stability of monolayer MoS₂samples synthesized using chemical vapor deposition and subsequently modified with organic molecules under ambient conditions. By analyzing the optical signatures of the samples using photoluminescence spectroscopy, Raman spectroscopy, and surface quality using atomic force microscopy, we observed that this modification of monolayer MoS₂with organic molecules is stable and retains its optical signature over time under ambient conditions. Furthermore, we show the reversibility of the effects induced by the organic molecules, as heating the modified samples restores their original optical signatures, indicating the re-establishment of the optical properties of the pristine monolayer MoS₂.

This study investigates the effect of silicon carbon nitride (SiCN) as an interlayer for ZnO-based resistive random access memory (RRAM). SiCN was deposited using plasma-enhanced chemical vapor deposition with controlled carbon content, achieved by varying the partial pressure of tetramethylsilane (4MS). Our results indicate that increasing the carbon concentration enhances the endurance of RRAM devices but reduces the on/off ratio. Devices with SiCN exhibited lower operating voltages and more uniform resistive switching behavior. Oxygen migration from ZnO to SiCN is examined by x-ray diffraction and x-ray photoelectron spectroscopy analyses, promoting the formation of conductive filaments and lowering set voltages. Additionally, we examined the impact of top electrode oxidation on RRAM performance. The oxidation of the Ti top electrode was found to reduce endurance and increase low resistive state resistance, potentially leading to device failure through the formation of an insulating layer between the electrode and resistive switching material. The oxygen storage capability of SiCN was further confirmed through high-temperature stress tests, demonstrating its potential as an oxygen reservoir. Devices with a 20 nm SiCN interlayer showed significantly improved endurance, with over 500 switching cycles, compared to 62 cycles in those with a 5 nm SiCN layer. However, the thicker SiCN layer resulted in a notably lower on/off ratio due to reduced capacitance. These findings suggest that SiCN interlayers can effectively enhance the performance and endurance of ZnO-based RRAM devices by acting as an oxygen reservoir and mitigating the top electrode oxidation effect.

Selenium-based nanoparticles exhibit antiviral activity by directly modulating immune function. Despite recent promising developments in utilizing selenium nanoparticles (Se NPs) against viral infections, the impact of surface ligand charge on the conformation and interaction with viral proteins, as well as the effectiveness of Se NPs in anti-Herpes simplex virus 1 (HSV-1) infection remains unexplored. In this study, three types of selenium nanoparticles (CTAB-Se, PVP-Se, SDS-Se) with distinct surface charges were synthesized by modifying the surface ligands. We found that apart from differences in surface charge, the size, morphology, and crystal structure of the three types of Se NPs were similar. Notably, although the lipophilicity and cellular uptake of SDS-Se with a negative charge were lower compared to positively charged CTAB-Se and neutrally charged PVP-Se, SDS-Se exhibited the strongest protein binding force during interaction with HSV-1. Consequently, SDS-Se demonstrated the most potent anti-HSV-1 activity and safeguarded normal cells from damage. The mechanistic investigation further revealed that SDS-Se NPs effectively inhibited the proliferation and assembly of HSV-1 by powerfully suppressing the key genes and proteins of HSV-1 at various stages of viral development. Hence, this study highlights the significant role of surface ligand engineering in the antiviral activity of Se NPs, presenting a viable approach for synthesizing Se NPs with tailored antiviral properties by modulating surface charge. This method holds promise for advancing research on the antiviral capabilities of Se NPs.

In this paper, we obtained n-type top-gate carbon nanotube (CNT) thin film field effect transistors (FET) with source/drain extensions structure through dielectrics optimization strategy, combining the yttrium layer with HfO₂dielectric argon annealing process, and metal contacts. The mechanism for enhanced n-type conduction was explained as being due to the vertical diffusion of yttrium to the HfO₂dielectric during argon annealing. This diffusion causes a bending of the energy band, which results in more positive fixed charges, and a reduction in the electron injection barrier between the low work function source/drain Cr electrode and CNT thin film. The optimized technology has great prospects for the low cost, large scale and high performance n-type CNT thin film FET to be used in integrated electronic devices.

Single-phase NiCo2O4 (NCO) nanoparticles (NPs) with an average particle size of 12 (± 3.5) nm were successfully synthesized as aggregates in urchin-like nanofibers via a hydrothermal route. Magnetization data measured as functions of temperature and magnetic field suggest a superparamagnetic-like behavior at room temperature, a ferrimagnetic transition around a Curie temperature TC ~200 K, and a spin blocking transition at a blocking temperature TB ~90 K, as observed at a field of 100 Oe. The spin blocking nature has been investigated by analyses of the field-dependence of TB in the static magnetization and its frequency-dependence in the ac susceptibility data measured in zero-field cooling regime, both indicate a low-temperature spin glass-like state. Below TB, the coercivity increases monotonically up to 1.7 kOe with decreasing temperature down to 5 K. Our results indicate that the magnetic behavior of NCO NPs, which is mainly determined by the cations' ratio, oxidation states, and site-occupancy, can be controlled by a synthesis in appropriate particle size and morphology.

The competing growth of two-dimensional (2D) and three-dimensional (3D) crystals of layered transition metal dichalcogenides (TMDCs) has been reproducibly observed in a large variety of chemical vapor deposition (CVD) reactors and demands a comprehensive understanding in terms of involved energetics. 2D and 3D growth is fundamentally different due to the large difference in the in-plane and out-of-plane binding energies in TMDC materials. Here, an analytical model describing TMDC growth via CVD is developed. The two most common TMDC structures produced via CVD growth (2D triangular flakes and 3D tetrahedra) are considered, and their formation energies are determined as a function of their growth parameters. By calculating the associated energies of 2D triangular or 3D tetrahedral flakes, we predict the minimum sizes of the critical nuclei of 2D triangular and 3D morphologies, and thereby determine the minimum realizable dimensions of TMDC, in the form of quantum dots. Analysis of growth rates shows that CVD favors 2D growth of MoS2 between 820 K and 900 K and 3D growth over 900 K. Our model also suggests that the flow rates of TMDC precursors (metal oxide and sulfur) in a long, cylindrical CVD reactor are important parameters for attaining uniform growth. Our model provides a compressive analysis of TMDC growth via CVD. Therefore, it is a critical tool for helping to achieve reproducible growth of 2D and 3D TMDCs for a variety of applications. .