Pub Date : 2026-02-18DOI: 10.1088/1361-6528/ae423a
Jinfan Liu, Bin Hou, Zengkun You, Kai Ou, Yudong Xia
To address the increasingly severe ecological degradation, photocatalytic technology has attracted significant attention due to its pollution-free nature and the abundance of renewable resources. Numerous semiconductor photocatalysts have been developed. However, their performance has long been constrained by the rapid recombination of photogenerated electron-hole pairs. In this study, the In2O3nanorods loaded with graphene structure has been fabricated, where In₂O₃nanorods were prepared using the glancing angle deposition technique. The research aims to suppress the recombination of photogenerated carriers in In₂O₃by leveraging the high electron mobility of graphene, thereby enhancing its photocatalytic performance. Under the optimal graphene loading conditions, the photocurrent density of In₂O₃/graphene is as high as 0.6 mA cm-2. The photocurrent density and degradation efficiency has been improved by 81.82% and 33.5% compared to pure In₂O₃nanorods, respectively. This enhancement can be attributed to the built-in electric field formed between graphene and In₂O₃, which facilitates rapid electron transfer and effectively suppresses charge recombination, thereby improving the overall photocatalytic performance.
{"title":"A novel In<sub>₂</sub>O<sub>₃</sub>nanorods/graphene heterostructure for enhanced photocatalysis.","authors":"Jinfan Liu, Bin Hou, Zengkun You, Kai Ou, Yudong Xia","doi":"10.1088/1361-6528/ae423a","DOIUrl":"10.1088/1361-6528/ae423a","url":null,"abstract":"<p><p>To address the increasingly severe ecological degradation, photocatalytic technology has attracted significant attention due to its pollution-free nature and the abundance of renewable resources. Numerous semiconductor photocatalysts have been developed. However, their performance has long been constrained by the rapid recombination of photogenerated electron-hole pairs. In this study, the In<sub>2</sub>O<sub>3</sub>nanorods loaded with graphene structure has been fabricated, where In<sub>₂</sub>O<sub>₃</sub>nanorods were prepared using the glancing angle deposition technique. The research aims to suppress the recombination of photogenerated carriers in In<sub>₂</sub>O<sub>₃</sub>by leveraging the high electron mobility of graphene, thereby enhancing its photocatalytic performance. Under the optimal graphene loading conditions, the photocurrent density of In<sub>₂</sub>O<sub>₃</sub>/graphene is as high as 0.6 mA cm<sup>-2</sup>. The photocurrent density and degradation efficiency has been improved by 81.82% and 33.5% compared to pure In<sub>₂</sub>O<sub>₃</sub>nanorods, respectively. This enhancement can be attributed to the built-in electric field formed between graphene and In<sub>₂</sub>O<sub>₃</sub>, which facilitates rapid electron transfer and effectively suppresses charge recombination, thereby improving the overall photocatalytic performance.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146125820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-18DOI: 10.1088/1361-6528/ae435b
Min Gao, Zhongtao Wen, Xinyuan Zhang, Zhouyang Guo, Yu Jiang
Liver fibrosis represents a critical intermediate stage in the progression of chronic liver diseases toward cirrhosis. Conventional therapeutic strategies remain limited by insufficient efficacy, notable side effects, or narrow applicability, making the effective reversal of fibrosis a persistent clinical challenge. Although gene silencing technologies offer a promising therapeutic avenue, their clinical translation is hampered by poor delivery efficiency, instabilityin vivo, and lack of tissue specificity. To address these issues, we developed a lactobionic acid-modified aminated glycogen (Lac-AGly) nanoparticle system for the targeted delivery of connective tissue growth factor (CTGF) targeting small interfering RNA (siRNA). By utilizing natural glycogen as a biodegradable backbone, a degree of amination of 51.2% conferred efficient siRNA binding capacity, while Lac modification enabled selective recognition of hepatocyte-expressed asialoglycoprotein receptors. The resulting Lac-AGly/siCTGF nanocomplexes exhibited a uniform spherical morphology with an average particle size of 247.2 ± 8.8 nm and a zeta potential of 28.5 ± 3.8 mV.In vivostudies demonstrated that Lac-AGly/siCTGF significantly attenuated liver fibrosis, evidenced by a reduction in the collagen-positive area from 14.3% to 3.1%. Collectively, the Lac-AGly/siCTGF nanoparticle system integrated biocompatibility, serum stability, and active hepatic targeting into a single platform, significantly improving siRNA delivery efficiency and gene-silencing efficacy while maintaining favorable biosafety. This work provided a novel and translatable strategy for precise molecular intervention in liver fibrosis.
{"title":"A hepatic-targeted glycogen-based nano-platform enables efficient CTGF silencing and attenuates liver fibrosis.","authors":"Min Gao, Zhongtao Wen, Xinyuan Zhang, Zhouyang Guo, Yu Jiang","doi":"10.1088/1361-6528/ae435b","DOIUrl":"10.1088/1361-6528/ae435b","url":null,"abstract":"<p><p>Liver fibrosis represents a critical intermediate stage in the progression of chronic liver diseases toward cirrhosis. Conventional therapeutic strategies remain limited by insufficient efficacy, notable side effects, or narrow applicability, making the effective reversal of fibrosis a persistent clinical challenge. Although gene silencing technologies offer a promising therapeutic avenue, their clinical translation is hampered by poor delivery efficiency, instability<i>in vivo</i>, and lack of tissue specificity. To address these issues, we developed a lactobionic acid-modified aminated glycogen (Lac-AGly) nanoparticle system for the targeted delivery of connective tissue growth factor (CTGF) targeting small interfering RNA (siRNA). By utilizing natural glycogen as a biodegradable backbone, a degree of amination of 51.2% conferred efficient siRNA binding capacity, while Lac modification enabled selective recognition of hepatocyte-expressed asialoglycoprotein receptors. The resulting Lac-AGly/siCTGF nanocomplexes exhibited a uniform spherical morphology with an average particle size of 247.2 ± 8.8 nm and a zeta potential of 28.5 ± 3.8 mV.<i>In vivo</i>studies demonstrated that Lac-AGly/siCTGF significantly attenuated liver fibrosis, evidenced by a reduction in the collagen-positive area from 14.3% to 3.1%. Collectively, the Lac-AGly/siCTGF nanoparticle system integrated biocompatibility, serum stability, and active hepatic targeting into a single platform, significantly improving siRNA delivery efficiency and gene-silencing efficacy while maintaining favorable biosafety. This work provided a novel and translatable strategy for precise molecular intervention in liver fibrosis.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146150401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-18DOI: 10.1088/1361-6528/ae3fa5
Thor August Schimmell Weis, Babak Vosoughi Lahijani, Konstantinos Tsoukalas, Marcus Albrechtsen, Søren Stobbe
Electrostatic actuators offer a method for tuning photonic components using orders of magnitude less power than competing technologies. We consider electrostatic comb drives with dimensions tailored for integration with silicon photonics and study their static and dynamical properties. We extract the spring constant by dynamical measurements, which do not rely on assumptions about the electrical properties and fringing fields. This, in turn, allows measuring the differential capacitance without making assumptions about the mechanical properties. The resulting data set therefore allows for an accurate assessment of the validity of multiple theoretical models available in the literature, and we identify the importance of the stress in the anchor points for an accurate theoretical description. We provide a comb-drive design, which can be directly applied in silicon photonics, where it is suitable for inducing very large phase shifts and other optical effects in nanoelectromechanical reconfigurable photonic circuits. Through measurements we find that our design can reach mechanical frequencies of 2.7 MHz, the highest operating frequency of a comb-drive actuator reported so far, while still retaining useful steady-state displacements.
{"title":"Electrostatic comb-drive actuators for nanoelectromechanical photonics: theory, design, fabrication, and characterization.","authors":"Thor August Schimmell Weis, Babak Vosoughi Lahijani, Konstantinos Tsoukalas, Marcus Albrechtsen, Søren Stobbe","doi":"10.1088/1361-6528/ae3fa5","DOIUrl":"10.1088/1361-6528/ae3fa5","url":null,"abstract":"<p><p>Electrostatic actuators offer a method for tuning photonic components using orders of magnitude less power than competing technologies. We consider electrostatic comb drives with dimensions tailored for integration with silicon photonics and study their static and dynamical properties. We extract the spring constant by dynamical measurements, which do not rely on assumptions about the electrical properties and fringing fields. This, in turn, allows measuring the differential capacitance without making assumptions about the mechanical properties. The resulting data set therefore allows for an accurate assessment of the validity of multiple theoretical models available in the literature, and we identify the importance of the stress in the anchor points for an accurate theoretical description. We provide a comb-drive design, which can be directly applied in silicon photonics, where it is suitable for inducing very large phase shifts and other optical effects in nanoelectromechanical reconfigurable photonic circuits. Through measurements we find that our design can reach mechanical frequencies of 2.7 MHz, the highest operating frequency of a comb-drive actuator reported so far, while still retaining useful steady-state displacements.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146093128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report the emergence and persistence of a room-temperature soliton-polariton condensate (SPC) within an organic supramolecular gel, formed through centimeter-scale, hierarchically nested helical nanowire circuits self-assembled from single molecules. We uncover a fractal feedback route, where nested interference and spin-momentum locking across fractal layers confine photons by nearly two orders of magnitude, while vibrational energy trapping sustains the coherence of triplet-SPC qubits. Micro-PL and magneto-optics reveal integrated 4.6 ms SPC lifetimes (not single-polariton lifetime) in helical nanowires, matched by models capturing ballistic soliton jumps and quantized topological pumping. By nesting cavities fractally, this gel platform delivers on-demand, reconfigurable, room-temperature quantum light at centimeter scales-pointing to flexible, low-cost neuromorphic quantum hardware where problem-native polaritonic circuits emerge, self-stabilize, and compute in situ.
我们报道了有机超分子凝胶中室温孤子-极化子凝聚体(SPC)的出现和持续存在,它是由单分子自组装而成的厘米级、分层嵌套的螺旋纳米线电路形成的。我们发现了一个分形反馈路径,其中嵌套干涉和跨分形层的自旋动量锁定将光子限制了近两个数量级,而振动能量捕获维持了三重spc量子比特的相干性。Micro-PL和磁光学揭示了螺旋纳米线中集成的4.6 ms SPC寿命(不是单极化子寿命),与捕获弹道孤子跳变和量子化拓扑泵浦的模型相匹配。通过分形嵌套空腔,这种凝胶平台提供按需、可重构、室温的厘米级量子光——指向灵活、低成本的神经形态量子硬件,在那里问题原生极化电路出现,自稳定,并在原位计算。
{"title":"Room-Temperature Soliton-Polariton Condensation in a Hierarchical Helical-Nanowire Fractal Gel.","authors":"Pushpendra Singh, Pathik Sahoo, Anirban Bandyopadhyay","doi":"10.1088/1361-6528/ae4755","DOIUrl":"https://doi.org/10.1088/1361-6528/ae4755","url":null,"abstract":"<p><p>We report the emergence and persistence of a room-temperature soliton-polariton condensate (SPC) within an organic supramolecular gel, formed through centimeter-scale, hierarchically nested helical nanowire circuits self-assembled from single molecules. We uncover a fractal feedback route, where nested interference and spin-momentum locking across fractal layers confine photons by nearly two orders of magnitude, while vibrational energy trapping sustains the coherence of triplet-SPC qubits. Micro-PL and magneto-optics reveal integrated 4.6 ms SPC lifetimes (not single-polariton lifetime) in helical nanowires, matched by models capturing ballistic soliton jumps and quantized topological pumping. By nesting cavities fractally, this gel platform delivers on-demand, reconfigurable, room-temperature quantum light at centimeter scales-pointing to flexible, low-cost neuromorphic quantum hardware where problem-native polaritonic circuits emerge, self-stabilize, and compute in situ.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146220326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sepsis-induced acute respiratory distress syndrome (ARDS) is a life-threatening condition with uncontrolled inflammation and lung damage. Current therapies are limited, and reprogramming macrophages from pro-inflammatory M1 to anti-inflammatory M2 phenotypes via STAT6/IRF4 activation offers a promising strategy. Dexamethasone-loaded glycyrrhiza protein nanoparticles (Dex@GNPs) were synthesized by extracting GP, denaturing it with phosphoric acid, cross-linking with glutaraldehyde, and encapsulating dexamethasone. Physicochemical properties (size,ζ-potential, drug release) were characterized.In vitrostudies used lipopolysaccharide (LPS)-stimulated MH-S macrophages;in vivoefficacy was evaluated in murine ARDS models (LPS intratracheal injection or cecal ligation and puncture). Macrophage polarization (flow cytometry, immunofluorescence), STAT6/IRF4 pathway activation (Western blot), lung histopathology (H&E), and inflammation markers (bronchoalveolar lavage fluid cytokines, ELISA) were assessed. Dex@GNPs exhibited favorable physicochemical properties (hydrodynamic diameter: 374 ± 12 nm;ζ-potential: -22 ± 4 mV) with pH-responsive drug release (79% cumulative release at pH 5.5 within 24 h).In vitro, Dex@GNPs significantly reprogrammed M1 macrophages to M2 phenotypes, increasing CD206+cells from 5% to 25% and upregulating STAT6/IRF4 expression compared to LPS-stimulated cells.In vivo, Dex@GNPs selectively targeted inflamed lungs, reduced alveolar damage, suppressed pro-inflammatory cytokines (TNF-α, IL-6, MCP-1 reduced by 81%, 83%, 86% respectively), and restored alveolar-capillary barrier integrity, outperforming free dexamethasone. Dex@GNPs synergize GP's targeting and dexamethasone's anti-inflammatory effects to alleviate sepsis-induced ARDS by STAT6/IRF4-mediated macrophage polarization, offering a biocompatible nanotherapeutic platform.
Pub Date : 2026-02-17DOI: 10.1088/1361-6528/ae3f3b
Junjie Xiong, Xinfeng Tan, Jiarui Zhang, Guojia Yu, Dan Guo
Solid-liquid gating is a promising route to probe the electrostatics of two-dimensional semiconductors, yet its mechanisms are easily obscured by interface defects and discharge paths introduced by ionic double layers in conventional measurement circuits. We address these issues with two advances: (i) a damage-free all-solid-liquid contact that suppresses interface degradation and trapping, and (ii) a measurement architecture that isolates the ionic-liquid (IL) double layer from circuit discharge, employing an ultrahigh-input-impedance follower to read the gate potential in operando. These measures deliver accurate and highly reproducible gate potentials. With this direct potential metrology, we measured the IL potential at the mid-channel, providing a more direct basis for explaining the apparent long-channel pinch-off effect. Crucially, we find that threshold voltage shifts correlate with the gate metals' intrinsic open-circuit potentials, not their work-function differences, overturning a common assumption. Together, these results clarify the mechanism of solid-liquid gating and establish a reliable foundation for designing low-power, solution-gated nanoelectronics.
{"title":"Solid-liquid contacts MoS<sub>₂</sub>transistors with<i>in-situ</i>ionic-potential probing.","authors":"Junjie Xiong, Xinfeng Tan, Jiarui Zhang, Guojia Yu, Dan Guo","doi":"10.1088/1361-6528/ae3f3b","DOIUrl":"10.1088/1361-6528/ae3f3b","url":null,"abstract":"<p><p>Solid-liquid gating is a promising route to probe the electrostatics of two-dimensional semiconductors, yet its mechanisms are easily obscured by interface defects and discharge paths introduced by ionic double layers in conventional measurement circuits. We address these issues with two advances: (i) a damage-free all-solid-liquid contact that suppresses interface degradation and trapping, and (ii) a measurement architecture that isolates the ionic-liquid (IL) double layer from circuit discharge, employing an ultrahigh-input-impedance follower to read the gate potential in operando. These measures deliver accurate and highly reproducible gate potentials. With this direct potential metrology, we measured the IL potential at the mid-channel, providing a more direct basis for explaining the apparent long-channel pinch-off effect. Crucially, we find that threshold voltage shifts correlate with the gate metals' intrinsic open-circuit potentials, not their work-function differences, overturning a common assumption. Together, these results clarify the mechanism of solid-liquid gating and establish a reliable foundation for designing low-power, solution-gated nanoelectronics.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146086399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work demonstrates a high-performance AlGaN/GaN high-electron-mobility transistor on SiC, featuring an unintentionally doped AlN super back barrier and an ultra-thin GaN channel. This structure directly addresses the limitation of conventional Fe-or C-doped buffers, where deep-level dopants induce high trap densities, severe current collapse, and reliability degradation. The AlN super back barrier /GaN heterointerface provides a large conduction band offset for robust carrier confinement and high intrinsic resistivity for effective leakage suppression. Consequently, the fabricated HEMTs exhibit low off-state leakage, a breakdown field exceeding 2.1 MV/cm, and minimal current collapse of only 10.87%. At 3.6 GHz, the device delivers a high output power density of 13.58 W/mm at a 70 V drain bias and achieves a peak power-added efficiency of 73.06% at 40 V. These results underscore the effectiveness of the AlN super back barrier with an ultra-thin channel in simultaneously enabling high breakdown strength, high power, and high efficiency, providing a promising solution for next-generation RF power applications.
{"title":"High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure.","authors":"Wenjun Liu, Yachao Zhang, Zhizhe Wang, Kai Su, Shenglei Zhao, Shengrui Xu, Jinfeng Zhang, Yixin Yao, Baiqi Wang, Yaolong Dong, Yue Hao, Jincheng Zhang","doi":"10.1088/1361-6528/ae46a5","DOIUrl":"https://doi.org/10.1088/1361-6528/ae46a5","url":null,"abstract":"<p><p>This work demonstrates a high-performance AlGaN/GaN high-electron-mobility transistor on SiC, featuring an unintentionally doped AlN super back barrier and an ultra-thin GaN channel. This structure directly addresses the limitation of conventional Fe-or C-doped buffers, where deep-level dopants induce high trap densities, severe current collapse, and reliability degradation. The AlN super back barrier /GaN heterointerface provides a large conduction band offset for robust carrier confinement and high intrinsic resistivity for effective leakage suppression. Consequently, the fabricated HEMTs exhibit low off-state leakage, a breakdown field exceeding 2.1 MV/cm, and minimal current collapse of only 10.87%. At 3.6 GHz, the device delivers a high output power density of 13.58 W/mm at a 70 V drain bias and achieves a peak power-added efficiency of 73.06% at 40 V. These results underscore the effectiveness of the AlN super back barrier with an ultra-thin channel in simultaneously enabling high breakdown strength, high power, and high efficiency, providing a promising solution for next-generation RF power applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146213564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-16DOI: 10.1088/1361-6528/ae40c3
Kai Kheng Yeoh, Pei Leng Teh, Cheow Keat Yeoh, Hakimah Osman, Mohd Sobri Bin Idris, Mohamad Nur Fuadi Bin Pargi, Halimatuddahliana Nadutionand, Chun Hong Voon
This study investigates how liquid silicone rubber (LSR) content (5-20 vol.%) and graphene nano-platelets (GNPs) loading (0-1 vol.%) affect the mechanical, thermal, and electrical properties of a dual epoxy/LSR matrix prepared by mechanical mixing. At 5 vol.% LSR and 0.2 vol.% GNP, the epoxy/LSR/GNP system shows a 25% toughness improvement compared with epoxy/GNP system. The system also demonstrates enhanced thermal stability over pure epoxy at 5 vol.% LSR and 1 vol.% GNP. Electrical bulk conductivity increases with higher LSR content (0-20 vol.%). A percolation threshold is reached at a very low GNP loading (0.8 vol%), yielding a marked conductivity rise. Overall, incorporating both LSR and GNP fillers into the epoxy matrix produces a composite with superior mechanical, thermal, and electrical properties, suitable for electrically conductive adhesives.
{"title":"Revolutionizing materials: exploring graphene-nano-platelets as a conductive filler in epoxy/liquid silicone rubber (LSR) system.","authors":"Kai Kheng Yeoh, Pei Leng Teh, Cheow Keat Yeoh, Hakimah Osman, Mohd Sobri Bin Idris, Mohamad Nur Fuadi Bin Pargi, Halimatuddahliana Nadutionand, Chun Hong Voon","doi":"10.1088/1361-6528/ae40c3","DOIUrl":"10.1088/1361-6528/ae40c3","url":null,"abstract":"<p><p>This study investigates how liquid silicone rubber (LSR) content (5-20 vol.%) and graphene nano-platelets (GNPs) loading (0-1 vol.%) affect the mechanical, thermal, and electrical properties of a dual epoxy/LSR matrix prepared by mechanical mixing. At 5 vol.% LSR and 0.2 vol.% GNP, the epoxy/LSR/GNP system shows a 25% toughness improvement compared with epoxy/GNP system. The system also demonstrates enhanced thermal stability over pure epoxy at 5 vol.% LSR and 1 vol.% GNP. Electrical bulk conductivity increases with higher LSR content (0-20 vol.%). A percolation threshold is reached at a very low GNP loading (0.8 vol%), yielding a marked conductivity rise. Overall, incorporating both LSR and GNP fillers into the epoxy matrix produces a composite with superior mechanical, thermal, and electrical properties, suitable for electrically conductive adhesives.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146106323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-13DOI: 10.1088/1361-6528/ae45b1
Peng Cui, Qianshan Xia, Zhao Han, Yan Wang, Tao Li, Bin Liu, Wei Song, Guangping Song, Xuan Wang
Electromagnetic wave pollution is becoming increasingly serious, which negatively affects both electronic devices and human health. There is an urgent demand to prepare the composites with light weight, high mechanical properties, and excellent electromagnetic interference (EMI) shielding performance. Herein, carbon nanotube-nickel nanoparticle/polyimide (CNT-Ni/PI) composite films were prepared through electrospinning, vacuum filtration, and coating methods. The composite film showed high mechanical performance due to the interface reinforcement effect. When the nickel nanoparticle content reached 2 wt%, the CNT-Ni/PI composite presented a tensile strength of 42.1 MPa and a Young's modulus of 710.5 MPa. Due to high conductivity, the carbon nanotube layer of the composite could efficiently reflect electromagnetic waves. Ni nanoparticles coated the surface of the PI film and generated magnetic loss and interfacial polarization loss at the interface to absorb the electromagnetic wave. Based on the synergistic effect of reflection and absorbing losses, the composite film achieved excellent EMI shielding effectiveness, and its total shielding effectiveness reached 81.45 dB in the X-band. Moreover, the specific shielding effectiveness (SSE) of the CNT-2Ni/PI composite film achieved the maximum value of 9819.28 dB·cm²/g when its thickness and areal density were 0.17 mm and 0.0083 g/cm², respectively. Therefore, the lightweight and flexible CNT-Ni/PI composite film is highly promising for application as an EMI shielding layer in wearable electronics and radar.
{"title":"Lightweight and flexible carbon nanotube-nickel nanoparticle/polyimide composite film for EMI shielding.","authors":"Peng Cui, Qianshan Xia, Zhao Han, Yan Wang, Tao Li, Bin Liu, Wei Song, Guangping Song, Xuan Wang","doi":"10.1088/1361-6528/ae45b1","DOIUrl":"https://doi.org/10.1088/1361-6528/ae45b1","url":null,"abstract":"<p><p>Electromagnetic wave pollution is becoming increasingly serious, which negatively affects both electronic devices and human health. There is an urgent demand to prepare the composites with light weight, high mechanical properties, and excellent electromagnetic interference (EMI) shielding performance. Herein, carbon nanotube-nickel nanoparticle/polyimide (CNT-Ni/PI) composite films were prepared through electrospinning, vacuum filtration, and coating methods. The composite film showed high mechanical performance due to the interface reinforcement effect. When the nickel nanoparticle content reached 2 wt%, the CNT-Ni/PI composite presented a tensile strength of 42.1 MPa and a Young's modulus of 710.5 MPa. Due to high conductivity, the carbon nanotube layer of the composite could efficiently reflect electromagnetic waves. Ni nanoparticles coated the surface of the PI film and generated magnetic loss and interfacial polarization loss at the interface to absorb the electromagnetic wave. Based on the synergistic effect of reflection and absorbing losses, the composite film achieved excellent EMI shielding effectiveness, and its total shielding effectiveness reached 81.45 dB in the X-band. Moreover, the specific shielding effectiveness (SSE) of the CNT-2Ni/PI composite film achieved the maximum value of 9819.28 dB·cm²/g when its thickness and areal density were 0.17 mm and 0.0083 g/cm², respectively. Therefore, the lightweight and flexible CNT-Ni/PI composite film is highly promising for application as an EMI shielding layer in wearable electronics and radar.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146195080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-13DOI: 10.1088/1361-6528/ae45b0
Xingjun Liu, Hongxia Liu, Mengwei Su, Dong Xing, Chang Liu
This study investigates the performance and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) under radio frequency (RF) stress through a device-level simulation of a commercial power amplifier. By analyzing the electrical characteristics, breakdown voltage, and RF performance under normal operation and before/after RF stress, we examined the influence of key structural parameters on the device's resistance to RF stress. The parameters studied include the passivation layer thickness, the gate-to-drain to gate-to-source length ratio (Lgd:Lgs), and the buried gate depth. Specifically, an increase in the passivation layer thickness from 0.095 μm to 0.245 μm resulted in a relatively limited improvement in RF stress resistance of 3.45%. In contrast, a variation in Lgd:Lgs from 2:1 to 1:2 and an increase in the buried gate depth from 1 nm to 3 nm led to more pronounced enhancements of 38.3% and 44.4%, respectively. Finally, TCAD simulation results visually illustrate the extent of improvement in RF stress resistance achieved through each structural modification.
{"title":"Research on structural reinforcement of AlGaN/GaN HEMT devices under RF stress.","authors":"Xingjun Liu, Hongxia Liu, Mengwei Su, Dong Xing, Chang Liu","doi":"10.1088/1361-6528/ae45b0","DOIUrl":"https://doi.org/10.1088/1361-6528/ae45b0","url":null,"abstract":"<p><p>This study investigates the performance and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) under radio frequency (RF) stress through a device-level simulation of a commercial power amplifier. By analyzing the electrical characteristics, breakdown voltage, and RF performance under normal operation and before/after RF stress, we examined the influence of key structural parameters on the device's resistance to RF stress. The parameters studied include the passivation layer thickness, the gate-to-drain to gate-to-source length ratio (Lgd:Lgs), and the buried gate depth. Specifically, an increase in the passivation layer thickness from 0.095 μm to 0.245 μm resulted in a relatively limited improvement in RF stress resistance of 3.45%. In contrast, a variation in Lgd:Lgs from 2:1 to 1:2 and an increase in the buried gate depth from 1 nm to 3 nm led to more pronounced enhancements of 38.3% and 44.4%, respectively. Finally, TCAD simulation results visually illustrate the extent of improvement in RF stress resistance achieved through each structural modification.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146195093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}