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A novel InOnanorods/graphene heterostructure for enhanced photocatalysis. 用于增强光催化的新型In₂O₃纳米棒/石墨烯异质结构。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-18 DOI: 10.1088/1361-6528/ae423a
Jinfan Liu, Bin Hou, Zengkun You, Kai Ou, Yudong Xia

To address the increasingly severe ecological degradation, photocatalytic technology has attracted significant attention due to its pollution-free nature and the abundance of renewable resources. Numerous semiconductor photocatalysts have been developed. However, their performance has long been constrained by the rapid recombination of photogenerated electron-hole pairs. In this study, the In2O3nanorods loaded with graphene structure has been fabricated, where InOnanorods were prepared using the glancing angle deposition technique. The research aims to suppress the recombination of photogenerated carriers in InOby leveraging the high electron mobility of graphene, thereby enhancing its photocatalytic performance. Under the optimal graphene loading conditions, the photocurrent density of InO/graphene is as high as 0.6 mA cm-2. The photocurrent density and degradation efficiency has been improved by 81.82% and 33.5% compared to pure InOnanorods, respectively. This enhancement can be attributed to the built-in electric field formed between graphene and InO, which facilitates rapid electron transfer and effectively suppresses charge recombination, thereby improving the overall photocatalytic performance.

为了解决日益严重的生态退化问题,光催化技术因其无污染和可再生资源的丰富而备受关注。许多半导体光催化剂已经被开发出来。然而,它们的性能长期以来受到光生电子-空穴对快速复合的限制。本研究制备了负载石墨烯结构的In₂O₃纳米棒,其中采用掠角沉积技术制备了In₂O₃纳米棒。该研究的目的是利用石墨烯的高电子迁移率,抑制in₂O₃中光生载流子的重组,从而提高其光催化性能。在最佳石墨烯负载条件下,In₂O₃/graphene的光电流密度高达0.6 mA/cm²。与纯In₂O₃纳米棒相比,光电流密度和降解效率分别提高了81.82%和33.5%。这种增强可以归因于石墨烯和In₂O₃之间形成的内置电场,它促进了快速的电子转移,有效地抑制了电荷重组,从而提高了整体的光催化性能。
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引用次数: 0
A hepatic-targeted glycogen-based nano-platform enables efficient CTGF silencing and attenuates liver fibrosis. 基于肝靶向糖原的纳米平台能够有效地沉默CTGF并减轻肝纤维化。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-18 DOI: 10.1088/1361-6528/ae435b
Min Gao, Zhongtao Wen, Xinyuan Zhang, Zhouyang Guo, Yu Jiang

Liver fibrosis represents a critical intermediate stage in the progression of chronic liver diseases toward cirrhosis. Conventional therapeutic strategies remain limited by insufficient efficacy, notable side effects, or narrow applicability, making the effective reversal of fibrosis a persistent clinical challenge. Although gene silencing technologies offer a promising therapeutic avenue, their clinical translation is hampered by poor delivery efficiency, instabilityin vivo, and lack of tissue specificity. To address these issues, we developed a lactobionic acid-modified aminated glycogen (Lac-AGly) nanoparticle system for the targeted delivery of connective tissue growth factor (CTGF) targeting small interfering RNA (siRNA). By utilizing natural glycogen as a biodegradable backbone, a degree of amination of 51.2% conferred efficient siRNA binding capacity, while Lac modification enabled selective recognition of hepatocyte-expressed asialoglycoprotein receptors. The resulting Lac-AGly/siCTGF nanocomplexes exhibited a uniform spherical morphology with an average particle size of 247.2 ± 8.8 nm and a zeta potential of 28.5 ± 3.8 mV.In vivostudies demonstrated that Lac-AGly/siCTGF significantly attenuated liver fibrosis, evidenced by a reduction in the collagen-positive area from 14.3% to 3.1%. Collectively, the Lac-AGly/siCTGF nanoparticle system integrated biocompatibility, serum stability, and active hepatic targeting into a single platform, significantly improving siRNA delivery efficiency and gene-silencing efficacy while maintaining favorable biosafety. This work provided a novel and translatable strategy for precise molecular intervention in liver fibrosis.

肝纤维化是慢性肝病向肝硬化发展的关键中间阶段。传统的治疗策略仍然受到疗效不足、副作用明显或适用性狭窄的限制,这使得有效逆转纤维化成为一个持续的临床挑战。尽管基因沉默技术提供了一种很有前景的治疗途径,但其临床转化受到递送效率低、体内不稳定和缺乏组织特异性的阻碍。为了解决这些问题,我们开发了一种乳酸修饰的氨基糖原(Lac - AGly)纳米颗粒系统,用于靶向递送靶向siRNA的结缔组织生长因子(CTGF)。通过利用天然糖原作为可生物降解的骨架,51.2%的胺化程度赋予了有效的siRNA结合能力,而乳酸修饰能够选择性识别肝细胞表达的asialglyprotein receptor (ASGPR)。所得Lac-AGly/siCTGF纳米复合物具有均匀的球形形貌,平均粒径为247.2±8.8 nm, zeta电位为28.5±3.8 mV。体内研究表明,Lac-AGly/siCTGF显著减轻肝纤维化,胶原阳性区域从14.3%减少到3.1%。总的来说,Lac - AGly/siCTGF纳米颗粒系统将生物相容性、血清稳定性和活性肝脏靶向性整合到一个平台中,显著提高了siRNA的递送效率和基因沉默效果,同时保持了良好的生物安全性。这项工作为肝纤维化的精确分子干预提供了一种新颖和可翻译的策略。
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引用次数: 0
Electrostatic comb-drive actuators for nanoelectromechanical photonics: theory, design, fabrication, and characterization. 纳米机电光子学静电梳状驱动致动器:理论、设计、制造与表征。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-18 DOI: 10.1088/1361-6528/ae3fa5
Thor August Schimmell Weis, Babak Vosoughi Lahijani, Konstantinos Tsoukalas, Marcus Albrechtsen, Søren Stobbe

Electrostatic actuators offer a method for tuning photonic components using orders of magnitude less power than competing technologies. We consider electrostatic comb drives with dimensions tailored for integration with silicon photonics and study their static and dynamical properties. We extract the spring constant by dynamical measurements, which do not rely on assumptions about the electrical properties and fringing fields. This, in turn, allows measuring the differential capacitance without making assumptions about the mechanical properties. The resulting data set therefore allows for an accurate assessment of the validity of multiple theoretical models available in the literature, and we identify the importance of the stress in the anchor points for an accurate theoretical description. We provide a comb-drive design, which can be directly applied in silicon photonics, where it is suitable for inducing very large phase shifts and other optical effects in nanoelectromechanical reconfigurable photonic circuits. Through measurements we find that our design can reach mechanical frequencies of 2.7 MHz, the highest operating frequency of a comb-drive actuator reported so far, while still retaining useful steady-state displacements.

静电致动器提供了一种调谐光子元件的方法,使用比竞争技术少几个数量级的功率。我们考虑了与硅光子学集成的静电梳状驱动器尺寸,并研究了它们的静态和动态特性。我们通过动态测量来提取弹簧常数,而不依赖于对电学性质和边缘场的假设。这反过来又允许在不假设机械性能的情况下测量差分电容。因此,所得数据集允许对文献中可用的多个理论模型的有效性进行准确评估,并且我们确定锚点中的应力对于准确理论描述的重要性。我们提供了一种梳状驱动设计,可以直接应用于硅光子学,它适用于在纳米机电可重构光子电路中诱导非常大的相移和其他光学效应。通过测量,我们发现我们的设计可以达到2.7 MHz的机械频率,这是迄今为止报道的梳状驱动器的最高工作频率,同时仍然保留有用的稳态位移。
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引用次数: 0
Room-Temperature Soliton-Polariton Condensation in a Hierarchical Helical-Nanowire Fractal Gel. 分层螺旋纳米线分形凝胶中的室温孤子-极化子凝聚。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-18 DOI: 10.1088/1361-6528/ae4755
Pushpendra Singh, Pathik Sahoo, Anirban Bandyopadhyay

We report the emergence and persistence of a room-temperature soliton-polariton condensate (SPC) within an organic supramolecular gel, formed through centimeter-scale, hierarchically nested helical nanowire circuits self-assembled from single molecules. We uncover a fractal feedback route, where nested interference and spin-momentum locking across fractal layers confine photons by nearly two orders of magnitude, while vibrational energy trapping sustains the coherence of triplet-SPC qubits. Micro-PL and magneto-optics reveal integrated 4.6 ms SPC lifetimes (not single-polariton lifetime) in helical nanowires, matched by models capturing ballistic soliton jumps and quantized topological pumping. By nesting cavities fractally, this gel platform delivers on-demand, reconfigurable, room-temperature quantum light at centimeter scales-pointing to flexible, low-cost neuromorphic quantum hardware where problem-native polaritonic circuits emerge, self-stabilize, and compute in situ.

我们报道了有机超分子凝胶中室温孤子-极化子凝聚体(SPC)的出现和持续存在,它是由单分子自组装而成的厘米级、分层嵌套的螺旋纳米线电路形成的。我们发现了一个分形反馈路径,其中嵌套干涉和跨分形层的自旋动量锁定将光子限制了近两个数量级,而振动能量捕获维持了三重spc量子比特的相干性。Micro-PL和磁光学揭示了螺旋纳米线中集成的4.6 ms SPC寿命(不是单极化子寿命),与捕获弹道孤子跳变和量子化拓扑泵浦的模型相匹配。通过分形嵌套空腔,这种凝胶平台提供按需、可重构、室温的厘米级量子光——指向灵活、低成本的神经形态量子硬件,在那里问题原生极化电路出现,自稳定,并在原位计算。
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引用次数: 0
Dexamethasone-loaded glycyrrhiza protein nanoparticles reprogram macrophages to an anti-inflammatory phenotype via STAT6/IRF4 activation for alleviating sepsis-induced acute respiratory distress syndrome. 负载地塞米松的甘草蛋白纳米颗粒通过激活STAT6/IRF4将巨噬细胞重编程为抗炎表型,以减轻败血症诱导的急性呼吸窘迫综合征。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-17 DOI: 10.1088/1361-6528/ae376b
Xin Wang, Xue Yang, Keyi Chen, Xiaoxian Ke, Hao Han, Yanxia Yang

Sepsis-induced acute respiratory distress syndrome (ARDS) is a life-threatening condition with uncontrolled inflammation and lung damage. Current therapies are limited, and reprogramming macrophages from pro-inflammatory M1 to anti-inflammatory M2 phenotypes via STAT6/IRF4 activation offers a promising strategy. Dexamethasone-loaded glycyrrhiza protein nanoparticles (Dex@GNPs) were synthesized by extracting GP, denaturing it with phosphoric acid, cross-linking with glutaraldehyde, and encapsulating dexamethasone. Physicochemical properties (size,ζ-potential, drug release) were characterized.In vitrostudies used lipopolysaccharide (LPS)-stimulated MH-S macrophages;in vivoefficacy was evaluated in murine ARDS models (LPS intratracheal injection or cecal ligation and puncture). Macrophage polarization (flow cytometry, immunofluorescence), STAT6/IRF4 pathway activation (Western blot), lung histopathology (H&E), and inflammation markers (bronchoalveolar lavage fluid cytokines, ELISA) were assessed. Dex@GNPs exhibited favorable physicochemical properties (hydrodynamic diameter: 374 ± 12 nm;ζ-potential: -22 ± 4 mV) with pH-responsive drug release (79% cumulative release at pH 5.5 within 24 h).In vitro, Dex@GNPs significantly reprogrammed M1 macrophages to M2 phenotypes, increasing CD206+cells from 5% to 25% and upregulating STAT6/IRF4 expression compared to LPS-stimulated cells.In vivo, Dex@GNPs selectively targeted inflamed lungs, reduced alveolar damage, suppressed pro-inflammatory cytokines (TNF-α, IL-6, MCP-1 reduced by 81%, 83%, 86% respectively), and restored alveolar-capillary barrier integrity, outperforming free dexamethasone. Dex@GNPs synergize GP's targeting and dexamethasone's anti-inflammatory effects to alleviate sepsis-induced ARDS by STAT6/IRF4-mediated macrophage polarization, offering a biocompatible nanotherapeutic platform.

背景:脓毒症引起的急性呼吸窘迫综合征(ARDS)是一种危及生命的疾病,伴有不受控制的炎症和肺损伤。目前的治疗方法是有限的,通过STAT6/IRF4激活将巨噬细胞从促炎M1型重编程为抗炎M2型提供了一种很有前景的策略。 ;方法:通过提取甘草蛋白(GP),用磷酸变性,与戊二醛交联,并包封地塞米松,合成负载地塞米松的甘草蛋白纳米颗粒(Dex@GNPs)。表征了其理化性质(粒径、ζ电位、药物释放)。体外研究使用lps刺激的MH-S巨噬细胞;在小鼠急性呼吸窘迫综合征模型(气管内注射或盲肠结扎穿刺)中评估体内疗效。对巨噬细胞极化(流式细胞术,免疫荧光)、STAT6/IRF4通路激活(Western blot)、肺组织病理学(H&E)和炎症标志物(BALF细胞因子,ELISA)进行了评估。 ;结果:Dex@GNPs具有良好的物理化学性质(流体动力学直径:374±12 nm; ζ电位:-22±4 mV), pH响应药物释放(pH 5.5 24 h内累积释放79%)。在体外,Dex@GNPs将M1巨噬细胞显著重编程为M2表型,与lps刺激的细胞相比,CD206 +细胞从5%增加到25%,STAT6/IRF4表达上调。在体内,Dex@GNPs选择性靶向炎症肺,减轻肺泡损伤,抑制促炎细胞因子(TNF-α, IL-6, MCP-1分别降低81%,83%,86%),恢复肺泡-毛细血管屏障完整性,优于游离地塞米松。Dex@GNPs通过STAT6/ irf4介导的巨噬细胞极化,协同GP的靶向作用和地塞米松的抗炎作用,减轻败血症性ARDS,提供生物相容性纳米治疗平台。 ;关键词:败血症性ARDS;甘草酸蛋白纳米颗粒;巨噬细胞极化;STAT6;IRF4;靶向给药 。
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引用次数: 0
Solid-liquid contacts MoStransistors within-situionic-potential probing. 具有原位离子电位探测的固液接触MoS 2晶体管。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-17 DOI: 10.1088/1361-6528/ae3f3b
Junjie Xiong, Xinfeng Tan, Jiarui Zhang, Guojia Yu, Dan Guo

Solid-liquid gating is a promising route to probe the electrostatics of two-dimensional semiconductors, yet its mechanisms are easily obscured by interface defects and discharge paths introduced by ionic double layers in conventional measurement circuits. We address these issues with two advances: (i) a damage-free all-solid-liquid contact that suppresses interface degradation and trapping, and (ii) a measurement architecture that isolates the ionic-liquid (IL) double layer from circuit discharge, employing an ultrahigh-input-impedance follower to read the gate potential in operando. These measures deliver accurate and highly reproducible gate potentials. With this direct potential metrology, we measured the IL potential at the mid-channel, providing a more direct basis for explaining the apparent long-channel pinch-off effect. Crucially, we find that threshold voltage shifts correlate with the gate metals' intrinsic open-circuit potentials, not their work-function differences, overturning a common assumption. Together, these results clarify the mechanism of solid-liquid gating and establish a reliable foundation for designing low-power, solution-gated nanoelectronics.

固液门控是一种很有前途的二维半导体静电探测途径,但其机制容易被传统测量电路中的界面缺陷和离子双层引入的放电路径所掩盖。我们通过两项进展解决了这些问题:(i)一种无损伤的全固液接触,可抑制界面退化和捕获,以及(ii)一种将离子-液体(IL)双层与电路放电隔离的测量架构,采用超高输入阻抗跟随器读取操作电位中的栅极电位。这些措施提供准确和高度可重复的门电位。通过这种直接电位测量,我们测量了中通道的IL电位,为解释明显的长通道掐断效应提供了更直接的依据。至关重要的是,我们发现阈值电压位移与栅极金属的固有开路电位(ocp)相关,而不是它们的工作功能差异,这推翻了一个常见的假设。总之,这些结果阐明了固液门控的机理,为设计低功耗、溶液门控的纳米电子学奠定了可靠的基础。
{"title":"Solid-liquid contacts MoS<sub>₂</sub>transistors with<i>in-situ</i>ionic-potential probing.","authors":"Junjie Xiong, Xinfeng Tan, Jiarui Zhang, Guojia Yu, Dan Guo","doi":"10.1088/1361-6528/ae3f3b","DOIUrl":"10.1088/1361-6528/ae3f3b","url":null,"abstract":"<p><p>Solid-liquid gating is a promising route to probe the electrostatics of two-dimensional semiconductors, yet its mechanisms are easily obscured by interface defects and discharge paths introduced by ionic double layers in conventional measurement circuits. We address these issues with two advances: (i) a damage-free all-solid-liquid contact that suppresses interface degradation and trapping, and (ii) a measurement architecture that isolates the ionic-liquid (IL) double layer from circuit discharge, employing an ultrahigh-input-impedance follower to read the gate potential in operando. These measures deliver accurate and highly reproducible gate potentials. With this direct potential metrology, we measured the IL potential at the mid-channel, providing a more direct basis for explaining the apparent long-channel pinch-off effect. Crucially, we find that threshold voltage shifts correlate with the gate metals' intrinsic open-circuit potentials, not their work-function differences, overturning a common assumption. Together, these results clarify the mechanism of solid-liquid gating and establish a reliable foundation for designing low-power, solution-gated nanoelectronics.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146086399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure. 通过AlN超级背障/超薄GaN通道异质结构,具有超过2 MV/cm击穿场和73% PAE的高性能GaN hemt。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-17 DOI: 10.1088/1361-6528/ae46a5
Wenjun Liu, Yachao Zhang, Zhizhe Wang, Kai Su, Shenglei Zhao, Shengrui Xu, Jinfeng Zhang, Yixin Yao, Baiqi Wang, Yaolong Dong, Yue Hao, Jincheng Zhang

This work demonstrates a high-performance AlGaN/GaN high-electron-mobility transistor on SiC, featuring an unintentionally doped AlN super back barrier and an ultra-thin GaN channel. This structure directly addresses the limitation of conventional Fe-or C-doped buffers, where deep-level dopants induce high trap densities, severe current collapse, and reliability degradation. The AlN super back barrier /GaN heterointerface provides a large conduction band offset for robust carrier confinement and high intrinsic resistivity for effective leakage suppression. Consequently, the fabricated HEMTs exhibit low off-state leakage, a breakdown field exceeding 2.1 MV/cm, and minimal current collapse of only 10.87%. At 3.6 GHz, the device delivers a high output power density of 13.58 W/mm at a 70 V drain bias and achieves a peak power-added efficiency of 73.06% at 40 V. These results underscore the effectiveness of the AlN super back barrier with an ultra-thin channel in simultaneously enabling high breakdown strength, high power, and high efficiency, providing a promising solution for next-generation RF power applications.

本研究展示了一种基于SiC的高性能AlGaN/GaN高电子迁移率晶体管,具有无意掺杂的AlN超级背垒和超薄GaN通道。这种结构直接解决了传统的fe或c掺杂缓冲器的局限性,其中深层掺杂会导致高陷阱密度,严重的电流崩溃和可靠性下降。AlN超级背势垒/GaN异质界面提供了大的导带偏移,从而实现强大的载流子约束和高的本征电阻率,从而有效地抑制泄漏。因此,制备的hemt具有低的断开状态泄漏,击穿场超过2.1 MV/cm,最小电流崩塌仅为10.87%。在3.6 GHz时,该器件在70 V漏极偏置下可提供13.58 W/mm的高输出功率密度,在40 V时可实现73.06%的峰值功率附加效率。这些结果强调了具有超薄通道的AlN超级背障在同时实现高击穿强度、高功率和高效率方面的有效性,为下一代射频功率应用提供了一个有前途的解决方案。
{"title":"High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure.","authors":"Wenjun Liu, Yachao Zhang, Zhizhe Wang, Kai Su, Shenglei Zhao, Shengrui Xu, Jinfeng Zhang, Yixin Yao, Baiqi Wang, Yaolong Dong, Yue Hao, Jincheng Zhang","doi":"10.1088/1361-6528/ae46a5","DOIUrl":"https://doi.org/10.1088/1361-6528/ae46a5","url":null,"abstract":"<p><p>This work demonstrates a high-performance AlGaN/GaN high-electron-mobility transistor on SiC, featuring an unintentionally doped AlN super back barrier and an ultra-thin GaN channel. This structure directly addresses the limitation of conventional Fe-or C-doped buffers, where deep-level dopants induce high trap densities, severe current collapse, and reliability degradation. The AlN super back barrier /GaN heterointerface provides a large conduction band offset for robust carrier confinement and high intrinsic resistivity for effective leakage suppression. Consequently, the fabricated HEMTs exhibit low off-state leakage, a breakdown field exceeding 2.1 MV/cm, and minimal current collapse of only 10.87%. At 3.6 GHz, the device delivers a high output power density of 13.58 W/mm at a 70 V drain bias and achieves a peak power-added efficiency of 73.06% at 40 V. These results underscore the effectiveness of the AlN super back barrier with an ultra-thin channel in simultaneously enabling high breakdown strength, high power, and high efficiency, providing a promising solution for next-generation RF power applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146213564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Revolutionizing materials: exploring graphene-nano-platelets as a conductive filler in epoxy/liquid silicone rubber (LSR) system. 革命性的材料:探索石墨烯纳米片作为导电填料在环氧树脂/液体硅橡胶(LSR)系统。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-16 DOI: 10.1088/1361-6528/ae40c3
Kai Kheng Yeoh, Pei Leng Teh, Cheow Keat Yeoh, Hakimah Osman, Mohd Sobri Bin Idris, Mohamad Nur Fuadi Bin Pargi, Halimatuddahliana Nadutionand, Chun Hong Voon

This study investigates how liquid silicone rubber (LSR) content (5-20 vol.%) and graphene nano-platelets (GNPs) loading (0-1 vol.%) affect the mechanical, thermal, and electrical properties of a dual epoxy/LSR matrix prepared by mechanical mixing. At 5 vol.% LSR and 0.2 vol.% GNP, the epoxy/LSR/GNP system shows a 25% toughness improvement compared with epoxy/GNP system. The system also demonstrates enhanced thermal stability over pure epoxy at 5 vol.% LSR and 1 vol.% GNP. Electrical bulk conductivity increases with higher LSR content (0-20 vol.%). A percolation threshold is reached at a very low GNP loading (0.8 vol%), yielding a marked conductivity rise. Overall, incorporating both LSR and GNP fillers into the epoxy matrix produces a composite with superior mechanical, thermal, and electrical properties, suitable for electrically conductive adhesives.

本研究考察了液态硅橡胶(LSR)含量(5-20 vol.%)和石墨烯纳米片(GNP)负载(0-1 vol.%)对机械混合制备的双环氧树脂/LSR基体的机械、热学和电学性能的影响。当LSR为5 vol.%, GNP为0.2 vol.%时,环氧树脂/LSR/GNP体系的韧性比环氧树脂/GNP体系提高了25%。在LSR为5 vol.%、GNP为1 vol.%时,该体系的热稳定性优于纯环氧树脂。体积电导率随LSR含量的增加而增加(0-20 vol.%)。在非常低的GNP负荷(0.8 vol%)下达到渗透阈值,导致电导率显著上升。总的来说,将LSR和GNP填料加入到环氧树脂基体中可以产生具有优异机械、热学和电学性能的复合材料,适用于导电粘合剂(eca)。
{"title":"Revolutionizing materials: exploring graphene-nano-platelets as a conductive filler in epoxy/liquid silicone rubber (LSR) system.","authors":"Kai Kheng Yeoh, Pei Leng Teh, Cheow Keat Yeoh, Hakimah Osman, Mohd Sobri Bin Idris, Mohamad Nur Fuadi Bin Pargi, Halimatuddahliana Nadutionand, Chun Hong Voon","doi":"10.1088/1361-6528/ae40c3","DOIUrl":"10.1088/1361-6528/ae40c3","url":null,"abstract":"<p><p>This study investigates how liquid silicone rubber (LSR) content (5-20 vol.%) and graphene nano-platelets (GNPs) loading (0-1 vol.%) affect the mechanical, thermal, and electrical properties of a dual epoxy/LSR matrix prepared by mechanical mixing. At 5 vol.% LSR and 0.2 vol.% GNP, the epoxy/LSR/GNP system shows a 25% toughness improvement compared with epoxy/GNP system. The system also demonstrates enhanced thermal stability over pure epoxy at 5 vol.% LSR and 1 vol.% GNP. Electrical bulk conductivity increases with higher LSR content (0-20 vol.%). A percolation threshold is reached at a very low GNP loading (0.8 vol%), yielding a marked conductivity rise. Overall, incorporating both LSR and GNP fillers into the epoxy matrix produces a composite with superior mechanical, thermal, and electrical properties, suitable for electrically conductive adhesives.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146106323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lightweight and flexible carbon nanotube-nickel nanoparticle/polyimide composite film for EMI shielding. 用于电磁干扰屏蔽的轻质柔性碳纳米管-纳米镍颗粒/聚酰亚胺复合薄膜。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-13 DOI: 10.1088/1361-6528/ae45b1
Peng Cui, Qianshan Xia, Zhao Han, Yan Wang, Tao Li, Bin Liu, Wei Song, Guangping Song, Xuan Wang

Electromagnetic wave pollution is becoming increasingly serious, which negatively affects both electronic devices and human health. There is an urgent demand to prepare the composites with light weight, high mechanical properties, and excellent electromagnetic interference (EMI) shielding performance. Herein, carbon nanotube-nickel nanoparticle/polyimide (CNT-Ni/PI) composite films were prepared through electrospinning, vacuum filtration, and coating methods. The composite film showed high mechanical performance due to the interface reinforcement effect. When the nickel nanoparticle content reached 2 wt%, the CNT-Ni/PI composite presented a tensile strength of 42.1 MPa and a Young's modulus of 710.5 MPa. Due to high conductivity, the carbon nanotube layer of the composite could efficiently reflect electromagnetic waves. Ni nanoparticles coated the surface of the PI film and generated magnetic loss and interfacial polarization loss at the interface to absorb the electromagnetic wave. Based on the synergistic effect of reflection and absorbing losses, the composite film achieved excellent EMI shielding effectiveness, and its total shielding effectiveness reached 81.45 dB in the X-band. Moreover, the specific shielding effectiveness (SSE) of the CNT-2Ni/PI composite film achieved the maximum value of 9819.28 dB·cm²/g when its thickness and areal density were 0.17 mm and 0.0083 g/cm², respectively. Therefore, the lightweight and flexible CNT-Ni/PI composite film is highly promising for application as an EMI shielding layer in wearable electronics and radar.

电磁波污染日益严重,对电子设备和人体健康都造成了负面影响。制备重量轻、力学性能高、屏蔽电磁干扰性能好的复合材料是迫切需要的。本文通过静电纺丝、真空过滤和包覆等方法制备了碳纳米管-镍纳米颗粒/聚酰亚胺(CNT-Ni/PI)复合薄膜。由于界面增强效应,复合膜表现出较高的力学性能。当纳米镍含量达到2 wt%时,cnts - ni /PI复合材料的抗拉强度为42.1 MPa,杨氏模量为710.5 MPa。由于复合材料的高导电性,碳纳米管层可以有效地反射电磁波。Ni纳米粒子包覆在PI膜表面,在界面处产生磁损耗和界面极化损耗来吸收电磁波。基于反射和吸收损耗的协同效应,复合膜获得了优异的电磁干扰屏蔽效果,在x波段的总屏蔽效率达到81.45 dB。此外,当CNT-2Ni/PI复合膜的厚度为0.17 mm、面密度为0.0083 g/cm²时,其比屏蔽效能(SSE)达到最大值9819.28 dB·cm²/g。因此,轻质柔韧的CNT-Ni/PI复合薄膜在可穿戴电子设备和雷达中作为电磁干扰屏蔽层具有很高的应用前景。
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引用次数: 0
Research on structural reinforcement of AlGaN/GaN HEMT devices under RF stress. 射频应力下AlGaN/GaN HEMT器件的结构增强研究。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-02-13 DOI: 10.1088/1361-6528/ae45b0
Xingjun Liu, Hongxia Liu, Mengwei Su, Dong Xing, Chang Liu

This study investigates the performance and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) under radio frequency (RF) stress through a device-level simulation of a commercial power amplifier. By analyzing the electrical characteristics, breakdown voltage, and RF performance under normal operation and before/after RF stress, we examined the influence of key structural parameters on the device's resistance to RF stress. The parameters studied include the passivation layer thickness, the gate-to-drain to gate-to-source length ratio (Lgd:Lgs), and the buried gate depth. Specifically, an increase in the passivation layer thickness from 0.095 μm to 0.245 μm resulted in a relatively limited improvement in RF stress resistance of 3.45%. In contrast, a variation in Lgd:Lgs from 2:1 to 1:2 and an increase in the buried gate depth from 1 nm to 3 nm led to more pronounced enhancements of 38.3% and 44.4%, respectively. Finally, TCAD simulation results visually illustrate the extent of improvement in RF stress resistance achieved through each structural modification.

本研究通过对商用功率放大器的器件级仿真,研究了AlGaN/GaN高电子迁移率晶体管(hemt)在射频(RF)应力下的性能和可靠性。通过分析正常工作和射频应力前后的电特性、击穿电压和射频性能,考察关键结构参数对器件抗射频应力的影响。研究的参数包括钝化层厚度、栅极漏极长度比、栅极源极长度比(Lgd:Lgs)和埋栅深度。当钝化层厚度从0.095 μm增加到0.245 μm时,其抗射频应力的提高相对有限,仅为3.45%。相比之下,Lgd:Lgs从2:1到1:2的变化和埋栅深度从1nm到3nm的增加分别导致38.3%和44.4%的显著增强。最后,TCAD仿真结果直观地说明了通过每次结构修改获得的射频抗应力改善程度。
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引用次数: 0
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