Nanotechnology最新文献

Color centers are promising single-photon emitters owing to their operation at room temperature and high photostability. In particular, using nanodiamonds as a host material is of interest for sensing and metrology. Furthermore, being a solid-state system allows for incorporation to photonic systems to tune both the emission intensity and photoluminescence spectrum and therefore adapt the individual color center to desired properties. We show successful coupling of a single nanodiamond hosting silicon-vacancy color centers to a plasmonic double bowtie antenna structure. To predict the spectrum of the coupled system, the photoluminescence spectrum of the SiV centers was measured before the coupling process and convoluted with the antenna resonance spectrum. After transferring the nanodiamond to the antenna the combined spectrum was measured again. The measurement agrees well with the calculated prediction of the coupled system and therefore confirms successful coupling.

Both stability and multi-level switching are crucial performance aspects for resistive random-access memory (RRAM), each playing a significant role in improving overall device performance. In this study, we successfully integrate these two features into a single RRAM configuration by embedding Ag-nanoparticles (Ag-NPs) into the TiN/Ta2O5/ITO structure. The device exhibits substantially lower switching voltages, a larger switching ratio, and multi-level switching phenomena compared to many other nanoparticle-embedded devices. We attribute it to the embedded Ag-NPs effectively switching the mechanism of conductive filaments and the controlled distribution of Ag-NPs facilitates the occurrence of multi-level switching. Additionally, the fabricated structure demonstrated an impressive optical transmittance of nearly 85%. Undoubtedly, this combined feature of RRAM not only enhances stability but also enables multi-level switching, thereby demonstrating an approach to fabricating versatile and practical electronic devices aimed at boosting storage capacity and speed. .

Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics. The lowest dark current density of p-i-n photodiodes based on quantum dots at the reverse bias of 1 V reaches the value of 0.8 mA/cm2. The cutoff wavelength shifts to the long-wavelength region with the Sn content increase. Maximum cutoff wavelength value is found to be 2.6 μm. Moreover, multilayer periodic structures with GeSiSn/Ge quantum wells and GeSiSn relaxed layers on Ge substrates were obtained. Reciprocal space maps were used to study the strained state of GeSiSn layers. The optimal growth parameters were determined to obtain slightly relaxed GeSiSn layers. Designed p-i-n photodiodes based on these structures demonstrated the minimal dark current density of 0.7 mA/cm2 and the cutoff wavelength of about 2 μm.

Non-equilibrium molecular dynamics (NEMD) simulations reveal the existence of a spontaneous heat current (SHC) in the absence of a temperature gradient and demonstrate ultra-high thermal rectification in asymmetric trapezoid-shaped graphene. These unique properties have potential applications in power generation and thermal circuits, functioning as thermal diodes. Our findings also show the presence of negative and zero thermal conductivity in this system. The negative thermal conductivity could enable the design of a conductive heat machine that pumps heat from the cold side to the hot side without additional energy consumption, functioning as a "full-free refrigerator." Meanwhile, zero thermal conductivity paves the way for the development of high-efficiency thermoelectric devices. Simulations were performed in two scenarios: with hydrogenated edges and without them. To ensure the reliability of the results, Reactive Empirical Bond Order and Tersoff potentials were employed. Finally, we examined how the SHC and the temperature difference at which the heat current is zero depend on the sample length, system width, and system temperature.

Non-equilibrium molecular dynamics (NEMD) simulations reveal the existence of a spontaneous heat current (SHC) in the absence of a temperature gradient and demonstrate ultra-high thermal rectification in asymmetric trapezoid-shaped graphene. These unique properties have potential applications in power generation and thermal circuits, functioning as thermal diodes. Our findings also show the presence of negative and zero thermal conductivity in this system. The negative thermal conductivity could enable the design of a conductive heat machine that pumps heat from the cold side to the hot side without additional energy consumption, functioning as a "full-free refrigerator." Meanwhile, zero thermal conductivity paves the way for the development of high-efficiency thermoelectric devices. Simulations were performed in two scenarios: with hydrogenated edges and without them. To ensure the reliability of the results, Reactive Empirical Bond Order and Tersoff potentials were employed. Finally, we examined how the SHC and the temperature difference at which the heat current is zero depend on the sample length, system width, and system temperature.

Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics. The lowest dark current density of p-i-n photodiodes based on quantum dots at the reverse bias of 1 V reaches the value of 0.8 mA/cm2. The cutoff wavelength shifts to the long-wavelength region with the Sn content increase. Maximum cutoff wavelength value is found to be 2.6 μm. Moreover, multilayer periodic structures with GeSiSn/Ge quantum wells and GeSiSn relaxed layers on Ge substrates were obtained. Reciprocal space maps were used to study the strained state of GeSiSn layers. The optimal growth parameters were determined to obtain slightly relaxed GeSiSn layers. Designed p-i-n photodiodes based on these structures demonstrated the minimal dark current density of 0.7 mA/cm2 and the cutoff wavelength of about 2 μm.

Color centers are promising single-photon emitters owing to their operation at room temperature and high photostability. In particular, using nanodiamonds as a host material is of interest for sensing and metrology. Furthermore, being a solid-state system allows for incorporation to photonic systems to tune both the emission intensity and photoluminescence spectrum and therefore adapt the individual color center to desired properties. We show successful coupling of a single nanodiamond hosting silicon-vacancy color centers to a plasmonic double bowtie antenna structure. To predict the spectrum of the coupled system, the photoluminescence spectrum of the SiV centers was measured before the coupling process and convoluted with the antenna resonance spectrum. After transferring the nanodiamond to the antenna the combined spectrum was measured again. The measurement agrees well with the calculated prediction of the coupled system and therefore confirms successful coupling.

Both stability and multi-level switching are crucial performance aspects for resistive random-access memory (RRAM), each playing a significant role in improving overall device performance. In this study, we successfully integrate these two features into a single RRAM configuration by embedding Ag-nanoparticles (Ag-NPs) into the TiN/Ta2O5/ITO structure. The device exhibits substantially lower switching voltages, a larger switching ratio, and multi-level switching phenomena compared to many other nanoparticle-embedded devices. We attribute it to the embedded Ag-NPs effectively switching the mechanism of conductive filaments and the controlled distribution of Ag-NPs facilitates the occurrence of multi-level switching. Additionally, the fabricated structure demonstrated an impressive optical transmittance of nearly 85%. Undoubtedly, this combined feature of RRAM not only enhances stability but also enables multi-level switching, thereby demonstrating an approach to fabricating versatile and practical electronic devices aimed at boosting storage capacity and speed. .

Supercapacitors are energy storage devices with long cycle life that can harvest and deliver high power. This makes them attractive for a broad range of applications including flexible and lightweight wearable consumer electronics. In this work, we fabricate flexible solid-state supercapacitors with improved capacitance and cycle life. We synthesize activated carbon (AC) from cabbage leaves as a low cost, biowaste-derived active electrode material. To improve mechanical flexibility and conductivity, we incorporate reduced graphene oxide sheets (RGO) and carbon quantum dots (CQDs) into the electrodes. We show that at the optimum AC/RGO/CQD composition, the capacitance of the solid-state supercapacitor is maximized while its scan rate dependence and bending stability are simultaneously improved. We envision that this approach offers significant potential for delivering efficient energy storage devices for consumer electronics.

The composition, microstructure, and electrochemical properties of the two kinds of thin film electrode materials, namely VS₂/MoS₂/Ni-IOS and VS₂/MoS₂/Ni-foam, were analyzed. The research results indicate that the self-assembled photonic crystal (PhC) templates with adjusted electrophoretic self-assembly processing parameters (100 V cm^-1; 7 min) would lead the specimen to a face-centered closely packed structure. Metallic nickel inverse opal structure (IOS) PhCs whose thickness can be freely regulated simply by electrochemical deposition time. VS₂and MoS₂are 2D materials with excellent electrochemical properties. We employed them as the electroactive material in this study and deposited them onto nickel IOS (Ni-IOS) surfaces to form a composite of The specimens exhibited an excellent specific capacitance (2180 F g^-1) at a charge-discharge current density of 5 A g^-1. After the 2000 cycles during the life test, the sample can still retain the original specific capacitance value by 72.3%. The IOS PhC substrate produced in this work is designed as VS₂/MoS₂/Ni-IOS supercapacitor electrode materials, which is proved to offer a significant technical contribution to the application of 2D materials in high-performance supercapacitors currently.