Pub Date : 2024-12-05DOI: 10.1088/1361-6528/ad9aad
Guanghui Yang, Jiale Song, Xinmiao Li, Kai Deng, Hongjie Yu, You Xu, Hongjing Wang, Ziqiang Wang, Liang Wang
Electrocatalytic nitrogen reduction reaction (NRR) is a prospective tactics for ammonia synthesis. However, the development of highly active NRR electrocatalysts is still challenging owing to the difficult activation of nitrogen and competitive hydrogen evolution reaction (HER). Here, we synthesized boron-doped AuRh mesoporous nanotubes (B-AuRh MNTs) via dual-template method coupled with boron doping. The mesoporous nanotube structure has high specific surface area and excellent surface permeability. Thereby, the B-AuRh MNTs exhibit NH3 yield of 13.3 μg h-1 mg-1cat and Faraday efficiency of 22.5% under 0.1 M Na2SO4. The doping of boron with weak hydrogen adsorption can generate electronic effect, thus stimulating the activation of N2 molecules and effectively inhibiting HER. This study proposes a universal method for the preparation of boron-doped Pd-based catalysts, which is beneficial to improve the NRR performance.
.
电催化氮还原反应(NRR)是一种很有前途的合成氨技术。然而,由于氮的难活化和竞争性析氢反应(HER)的存在,高活性NRR电催化剂的开发仍然具有挑战性。本文采用双模板法结合硼掺杂合成了硼掺杂的AuRh介孔纳米管(B-AuRh MNTs)。介孔纳米管结构具有较高的比表面积和优良的表面渗透性。因此,在0.1 M Na2SO4下,B-AuRh MNTs的NH3产率为13.3 μg h-1 mg-1cat,法拉第效率为22.5%。弱氢吸附硼的掺杂可以产生电子效应,从而刺激N2分子的活化,有效抑制HER。本研究提出了一种制备掺硼pd基催化剂的通用方法,有利于提高NRR性能。
{"title":"Boron modification of AuRh mesoporous nanotubes for electro-reduction of nitrogen to ammonia.","authors":"Guanghui Yang, Jiale Song, Xinmiao Li, Kai Deng, Hongjie Yu, You Xu, Hongjing Wang, Ziqiang Wang, Liang Wang","doi":"10.1088/1361-6528/ad9aad","DOIUrl":"https://doi.org/10.1088/1361-6528/ad9aad","url":null,"abstract":"<p><p>Electrocatalytic nitrogen reduction reaction (NRR) is a prospective tactics for ammonia synthesis. However, the development of highly active NRR electrocatalysts is still challenging owing to the difficult activation of nitrogen and competitive hydrogen evolution reaction (HER). Here, we synthesized boron-doped AuRh mesoporous nanotubes (B-AuRh MNTs) via dual-template method coupled with boron doping. The mesoporous nanotube structure has high specific surface area and excellent surface permeability. Thereby, the B-AuRh MNTs exhibit NH3 yield of 13.3 μg h-1 mg-1cat and Faraday efficiency of 22.5% under 0.1 M Na2SO4. The doping of boron with weak hydrogen adsorption can generate electronic effect, thus stimulating the activation of N2 molecules and effectively inhibiting HER. This study proposes a universal method for the preparation of boron-doped Pd-based catalysts, which is beneficial to improve the NRR performance.
.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142786154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
There has been a lot of study and advancement in the area of carbon allotropes in the last several decades, driven by the exceptional and diverse physical and chemical characteristics of carbon nanomaterials. For example, nanostructured forms such as carbon nanotubes (CNTs), graphene, and carbon quantum dots have the potential to revolutionize various industries (Roston 2010The Carbon Age: How Life's Core Element Has Become Civilization's Greatest Threat; In and Noy 2014Nanotechnology's Wonder Material: Synthesis of Carbon Nanotubes; Penget al2014Nanotechnol. Sci. Appl.7 1-29). The global scientific community continues to research in the field of creating new materials, particularly low-dimensional carbon allotropes such as CNTs and carbyne. Carbyne is a one-dimensional carbon allotrope with a large surface area, chemical reactivity, and gas molecule adsorption potential that makes it extremely sensitive to gases and electronic nose (E-nose) applications due to its linear sp-hybridized atomic chain structure. The primary objective of this work is to increase the sensitivity, selectivity, and overall efficiency of E-nose systems using a synergistic combination of carbyne-based sensing components with cutting-edge machine learning (ML) techniques. The exceptional electronic properties of carbyne, such as its high electron mobility and adjustable bandgap, enable rapid and specific adsorption of various gas molecules. Additionally, its significant surface area-to-volume ratio enhances the detection of trace concentrations. Our suggested advanced hybrid system utilises support vector machines and convolutional neural networks as sophisticated ML approaches to analyse data provided by carbyne sensors. These algorithms enhance the precision and durability of gas detection by effectively recognising intricate patterns and correlations in the sensor data. Empirical evidence suggests that E-nose systems based on carbyne have superior performance in terms of reaction time, sensitivity, and specificity compared to conventional materials. This research emphasises the revolutionary potential of carbyne in the advancement of next-generation gas sensing systems, which has significant implications for applications in environmental monitoring, medical diagnostics, and industrial process control.
{"title":"Carbyne as a promising material for E-nose applications with machine learning.","authors":"Alexey Kucherik, Ashok Kumar, Abramov Andrey, Samyshkin Vlad, Osipov Anton, Bordanov Ilya, Sergey Shchanikov, Mahesh Kumar","doi":"10.1088/1361-6528/ad947c","DOIUrl":"10.1088/1361-6528/ad947c","url":null,"abstract":"<p><p>There has been a lot of study and advancement in the area of carbon allotropes in the last several decades, driven by the exceptional and diverse physical and chemical characteristics of carbon nanomaterials. For example, nanostructured forms such as carbon nanotubes (CNTs), graphene, and carbon quantum dots have the potential to revolutionize various industries (Roston 2010<i>The Carbon Age: How Life's Core Element Has Become Civilization's Greatest Threat</i>; In and Noy 2014<i>Nanotechnology's Wonder Material: Synthesis of Carbon Nanotubes</i>; Peng<i>et al</i>2014<i>Nanotechnol. Sci. Appl.</i>7 1-29). The global scientific community continues to research in the field of creating new materials, particularly low-dimensional carbon allotropes such as CNTs and carbyne. Carbyne is a one-dimensional carbon allotrope with a large surface area, chemical reactivity, and gas molecule adsorption potential that makes it extremely sensitive to gases and electronic nose (E-nose) applications due to its linear sp-hybridized atomic chain structure. The primary objective of this work is to increase the sensitivity, selectivity, and overall efficiency of E-nose systems using a synergistic combination of carbyne-based sensing components with cutting-edge machine learning (ML) techniques. The exceptional electronic properties of carbyne, such as its high electron mobility and adjustable bandgap, enable rapid and specific adsorption of various gas molecules. Additionally, its significant surface area-to-volume ratio enhances the detection of trace concentrations. Our suggested advanced hybrid system utilises support vector machines and convolutional neural networks as sophisticated ML approaches to analyse data provided by carbyne sensors. These algorithms enhance the precision and durability of gas detection by effectively recognising intricate patterns and correlations in the sensor data. Empirical evidence suggests that E-nose systems based on carbyne have superior performance in terms of reaction time, sensitivity, and specificity compared to conventional materials. This research emphasises the revolutionary potential of carbyne in the advancement of next-generation gas sensing systems, which has significant implications for applications in environmental monitoring, medical diagnostics, and industrial process control.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142682410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-04DOI: 10.1088/1361-6528/ad960f
Nicolae Filipoiu, Neculai Plugaru, Titus Sandu, Rodica Plugaru, George Alexandru Nemnes
Recently, all-oxide ferroelectric tunnel junctions, with single or composite potential barriers based on SrRuO3/BaTiO3/SrTiO3(SRO/BTO/STO) perovskites, have drawn a particular interest for high density low power applications, due to their highly tunable transport properties and device scaling down possibility to atomic size. Here, using first principles calculations and the non-equilibrium Green's functions formalism, we explore the electronic structure and tunneling transport properties in magnetoelectric SRO/BTO/mSTO/SRO interfaces, (m= 0, 2, or 4 unit cells), considering both the RuO6octahedra tilts and magnetic SRO electrodes. Our main results may be summarized as follows: (i) the band alignment schemes predict that polarization direction may determine both Schottky barrier or Ohmic contacts form(STO) = 0, but only Schottky contacts form(STO) = 2 and 4 junctions; (ii) the tunnel electroresistance and tunnel magnetoresistance ratios are evaluated at 0 and 300 K; (iii) the most magnetoelectric responsive interfaces are obtained for them(STO) = 2 heterostructure, this system also showing co-existent giant tunnel electroresistance and tunnel magnetoresistance effects; (iv) the interfacial magnetoelectric coupling is not strong enough to control the tunnel magnetoresistance by polarization switching, in spite of significant SRO ferromagnetism.
{"title":"First principles electron transport in magnetoelectric SrRuO<sub>3</sub>/BaTiO<sub>3</sub>/SrTiO<sub>3</sub>/SrRuO<sub>3</sub>interfaces.","authors":"Nicolae Filipoiu, Neculai Plugaru, Titus Sandu, Rodica Plugaru, George Alexandru Nemnes","doi":"10.1088/1361-6528/ad960f","DOIUrl":"10.1088/1361-6528/ad960f","url":null,"abstract":"<p><p>Recently, all-oxide ferroelectric tunnel junctions, with single or composite potential barriers based on SrRuO<sub>3</sub>/BaTiO<sub>3</sub>/SrTiO<sub>3</sub>(SRO/BTO/STO) perovskites, have drawn a particular interest for high density low power applications, due to their highly tunable transport properties and device scaling down possibility to atomic size. Here, using first principles calculations and the non-equilibrium Green's functions formalism, we explore the electronic structure and tunneling transport properties in magnetoelectric SRO/BTO/<i>m</i>STO/SRO interfaces, (<i>m</i>= 0, 2, or 4 unit cells), considering both the RuO<sub>6</sub>octahedra tilts and magnetic SRO electrodes. Our main results may be summarized as follows: (i) the band alignment schemes predict that polarization direction may determine both Schottky barrier or Ohmic contacts for<i>m</i>(STO) = 0, but only Schottky contacts for<i>m</i>(STO) = 2 and 4 junctions; (ii) the tunnel electroresistance and tunnel magnetoresistance ratios are evaluated at 0 and 300 K; (iii) the most magnetoelectric responsive interfaces are obtained for the<i>m</i>(STO) = 2 heterostructure, this system also showing co-existent giant tunnel electroresistance and tunnel magnetoresistance effects; (iv) the interfacial magnetoelectric coupling is not strong enough to control the tunnel magnetoresistance by polarization switching, in spite of significant SRO ferromagnetism.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142693319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1088/1361-6528/ad960e
Nobuyuki Ishida, Takaaki Mano
Theoretical analysis of the electrostatic force between a metallic tip and semiconductor surface in Kelvin probe force microscopy (KPFM) measurements has been challenging due to the complexity introduced by tip-induced band bending (TIBB). In this study, we present a method for numerically computing the electrostatic forces in a fully three-dimensional (3D) configuration. Our calculations on a system composed of a metallic tip and GaAs(110) surface revealed deviations from parabolic behavior in the bias dependence of the electrostatic force, which is consistent with previously reported experimental results. In addition, we show that the tip radii estimated from curve fitting of the theory to experimental data provide reasonable values, consistent with the shapes of tip apex observed using scanning electron microscopy. The 3D simulation, which accounted for the influence of TIBB, enables a detailed analysis of the physics involved in KPFM measurements of semiconductor samples, thereby contributing to the development of more accurate measurement and analytical methods.
在开尔文探针力显微镜(KPFM)测量中,由于尖端诱导带弯曲(TIBB)带来的复杂性,对金属尖端和半导体表面之间的静电力进行理论分析一直是一项挑战。在本研究中,我们提出了一种在全三维(3D)配置中对静电力进行数值计算的方法。我们对由金属尖端和 GaAs(110) 表面组成的系统进行的计算显示,静电力的偏置依赖性偏离了抛物线行为,这与之前报告的实验结果一致。此外,我们还表明,根据理论与实验数据的曲线拟合估算出的尖端半径提供了合理的值,与扫描电子显微镜观察到的尖端顶点形状一致。三维模拟考虑了 TIBB 的影响,能够详细分析半导体样品 KPFM 测量中涉及的物理问题,从而有助于开发更精确的测量和分析方法。
{"title":"Quantitative theoretical analysis of the electrostatic force between a metallic tip and semiconductor surface in Kelvin probe force microscopy.","authors":"Nobuyuki Ishida, Takaaki Mano","doi":"10.1088/1361-6528/ad960e","DOIUrl":"10.1088/1361-6528/ad960e","url":null,"abstract":"<p><p>Theoretical analysis of the electrostatic force between a metallic tip and semiconductor surface in Kelvin probe force microscopy (KPFM) measurements has been challenging due to the complexity introduced by tip-induced band bending (TIBB). In this study, we present a method for numerically computing the electrostatic forces in a fully three-dimensional (3D) configuration. Our calculations on a system composed of a metallic tip and GaAs(110) surface revealed deviations from parabolic behavior in the bias dependence of the electrostatic force, which is consistent with previously reported experimental results. In addition, we show that the tip radii estimated from curve fitting of the theory to experimental data provide reasonable values, consistent with the shapes of tip apex observed using scanning electron microscopy. The 3D simulation, which accounted for the influence of TIBB, enables a detailed analysis of the physics involved in KPFM measurements of semiconductor samples, thereby contributing to the development of more accurate measurement and analytical methods.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142693320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-29DOI: 10.1088/1361-6528/ad958c
Giorgos Boras, Haotian Zeng, Jae-Seong Park, Huiwen Deng, Mingchu Tang, Huiyun Liu
The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications.
{"title":"Quantum dots synthesis within ternary III-V nanowire towards light emitters in quantum photonic circuits: a review.","authors":"Giorgos Boras, Haotian Zeng, Jae-Seong Park, Huiwen Deng, Mingchu Tang, Huiyun Liu","doi":"10.1088/1361-6528/ad958c","DOIUrl":"10.1088/1361-6528/ad958c","url":null,"abstract":"<p><p>The positioning of quantum dots (QDs) in nanowires (NWs) on-axis has emerged as a controllable method of QD fabrication that has given rise to structures with exciting potential in novel applications in the field of Si photonics. In particular, III-V NWQDs attract a great deal of interest owing to their vibrant optical properties, high carrier mobility, facilitation in integration with Si and bandgap tunability, which render them highly versatile. Moreover, unlike Stranski-Krastanov or self-assembled QDs, this configuration allows for deterministic position and size of the dots, enhancing the sample uniformity and enabling beneficial functions. Among these functions, single photon emission has presented significant interest due to its key role in quantum information processing. This has led to efforts for the integration of ternary III-V NWQD non-classical light emitters on-chip, which is promising for the commercial expansion of quantum photonic circuits. In the current review, we will describe the recent progress in the synthesis of ternary III-V NWQDs, including the growth methods and the material platforms in the available literature. Furthermore, we will present the results related to single photon emission and the integration of III-V NWQDs as single photon sources in quantum photonic circuits, highlighting their promising potential in quantum information processing. Our work demonstrates the up-to-date landscape in this field of research and pronounces the importance of ternary III-V NWQDs in quantum information and optoelectronic applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142687701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tribological printing is emerging as a promising technique for micro/nano manufacturing. A significant challenge is enhancing efficiency and minimizing the need for thousands of sliding cycles to create nano- or microstructures (2018ACS Appl. Mater. Inter.10 335-47, 2019 Nanotechnology30 302). This study presents a rapid approach for forming Cu microwires on Si wafers through a friction method during the evaporation of an ethanol-based lubricant containing Cu nanoparticles. The preparation time is influenced by the volume of the lubricant added, with optimal conditions reducing the time to 300 s (600 sliding cycles) for producing Cu microwires with a thickness of 200 nm. Key aspects include the lubricating effect of ethanol on the friction pairs and the role of ethanol evaporation in the growth of Cu microwires. Successful formation requires a careful balance between microwire thickening and wear removal. The resulting Cu microwires demonstrate mechanical and electrical properties that make them suitable as micro conductors. This work provides a novel approach for fabricating conductive microstructures on Si surfaces and other curved surfaces, offering potential applications in microelectronics and sensor technologies.
{"title":"Friction-enhanced formation of Cu microwire on Si wafer.","authors":"Chenxu Liu, Yang Song, Zhimin Chai, Hongbo Zeng, Yu Tian, Yonggang Meng","doi":"10.1088/1361-6528/ad958d","DOIUrl":"10.1088/1361-6528/ad958d","url":null,"abstract":"<p><p>Tribological printing is emerging as a promising technique for micro/nano manufacturing. A significant challenge is enhancing efficiency and minimizing the need for thousands of sliding cycles to create nano- or microstructures (2018<i>ACS Appl. Mater. Inter.<b>10</b> 335-47, 2019 Nanotechnology<b>30</b> 302</i>). This study presents a rapid approach for forming Cu microwires on Si wafers through a friction method during the evaporation of an ethanol-based lubricant containing Cu nanoparticles. The preparation time is influenced by the volume of the lubricant added, with optimal conditions reducing the time to 300 s (600 sliding cycles) for producing Cu microwires with a thickness of 200 nm. Key aspects include the lubricating effect of ethanol on the friction pairs and the role of ethanol evaporation in the growth of Cu microwires. Successful formation requires a careful balance between microwire thickening and wear removal. The resulting Cu microwires demonstrate mechanical and electrical properties that make them suitable as micro conductors. This work provides a novel approach for fabricating conductive microstructures on Si surfaces and other curved surfaces, offering potential applications in microelectronics and sensor technologies.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142687644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-28DOI: 10.1088/1361-6528/ad9480
Farman Ullah, Sina Kazemian, Giovanni Fanchini
The competing growth of two-dimensional (2D) and three-dimensional (3D) crystals of layered transition metal dichalcogenides (TMDCs) has been reproducibly observed in a large variety of chemical vapor deposition (CVD) reactors and demands a comprehensive understanding in terms of involved energetics. 2D and 3D growth is fundamentally different due to the large difference in the in-plane and out-of-plane binding energies in TMDC materials. Here, an analytical model describing TMDC growth via CVD is developed. The two most common TMDC structures produced via CVD growth (2D triangular flakes and 3D tetrahedra) are considered, and their formation energies are determined as a function of their growth parameters. By calculating the associated energies of 2D triangular or 3D tetrahedral flakes, we predict the minimum sizes of the critical nuclei of 2D triangular and 3D morphologies, and thereby determine the minimum realizable dimensions of TMDC, in the form of quantum dots. Analysis of growth rates shows that CVD favors 2D growth of MoS2between 820 K and 900 K and 3D growth over 900 K. Our model also suggests that the flow rates of TMDC precursors (metal oxide and sulfur) in a long, cylindrical CVD reactor are important parameters for attaining uniform growth. Our model provides a compressive analysis of TMDC growth via CVD. Therefore, it is a critical tool for helping to achieve reproducible growth of 2D and 3D TMDCs for a variety of applications.
{"title":"Understanding the competing growth of 2D and 3D transition metal dichalcogenides in a chemical vapor deposition (CVD) reactor.","authors":"Farman Ullah, Sina Kazemian, Giovanni Fanchini","doi":"10.1088/1361-6528/ad9480","DOIUrl":"10.1088/1361-6528/ad9480","url":null,"abstract":"<p><p>The competing growth of two-dimensional (2D) and three-dimensional (3D) crystals of layered transition metal dichalcogenides (TMDCs) has been reproducibly observed in a large variety of chemical vapor deposition (CVD) reactors and demands a comprehensive understanding in terms of involved energetics. 2D and 3D growth is fundamentally different due to the large difference in the in-plane and out-of-plane binding energies in TMDC materials. Here, an analytical model describing TMDC growth via CVD is developed. The two most common TMDC structures produced via CVD growth (2D triangular flakes and 3D tetrahedra) are considered, and their formation energies are determined as a function of their growth parameters. By calculating the associated energies of 2D triangular or 3D tetrahedral flakes, we predict the minimum sizes of the critical nuclei of 2D triangular and 3D morphologies, and thereby determine the minimum realizable dimensions of TMDC, in the form of quantum dots. Analysis of growth rates shows that CVD favors 2D growth of MoS<sub>2</sub>between 820 K and 900 K and 3D growth over 900 K. Our model also suggests that the flow rates of TMDC precursors (metal oxide and sulfur) in a long, cylindrical CVD reactor are important parameters for attaining uniform growth. Our model provides a compressive analysis of TMDC growth via CVD. Therefore, it is a critical tool for helping to achieve reproducible growth of 2D and 3D TMDCs for a variety of applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142682446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-28DOI: 10.1088/1361-6528/ad933a
Dingli Wang, Rachel Chen, Nasim Anjum, Changhong Ke
Controlling the thermal expansion of ceramic materials is important for many of their applications that involve high-temperature processing and/or working conditions. In this study, we investigate the thermal expansion properties of additively manufactured alumina that is reinforced with boron nitride nanotubes (BNNTs) over a broad temperature range, from room temperature to 900 °C. The coefficient of thermal expansion (CTE) of the BNNT-alumina nanocomposite increases with temperature but decreases with an increase in BNNT loading. The introduction of 0.6% BNNTs results in an approximate 16% reduction in the CTE of alumina. The observed significant CTE reduction of ceramics is attributed to the BNNT's low CTE and ultrahigh Young's modulus, and effective interfacial load transfer at the BNNT-ceramic interface. Micromechanical analysis, based onin situRaman measurements, reveals the transition of thermal-expansion-induced interface straining of nanotubes, which shifts from compression to tension inside the ceramic matrix under thermal loadings. This study provides valuable insights into the thermomechanical behavior of BNNT-reinforced ceramic nanocomposites and contributes to the optimal design of ceramic materials with tunable and zero CTE.
{"title":"Thermal expansion of boron nitride nanotubes and additively manufactured ceramic nanocomposites.","authors":"Dingli Wang, Rachel Chen, Nasim Anjum, Changhong Ke","doi":"10.1088/1361-6528/ad933a","DOIUrl":"https://doi.org/10.1088/1361-6528/ad933a","url":null,"abstract":"<p><p>Controlling the thermal expansion of ceramic materials is important for many of their applications that involve high-temperature processing and/or working conditions. In this study, we investigate the thermal expansion properties of additively manufactured alumina that is reinforced with boron nitride nanotubes (BNNTs) over a broad temperature range, from room temperature to 900 °C. The coefficient of thermal expansion (CTE) of the BNNT-alumina nanocomposite increases with temperature but decreases with an increase in BNNT loading. The introduction of 0.6% BNNTs results in an approximate 16% reduction in the CTE of alumina. The observed significant CTE reduction of ceramics is attributed to the BNNT's low CTE and ultrahigh Young's modulus, and effective interfacial load transfer at the BNNT-ceramic interface. Micromechanical analysis, based on<i>in situ</i>Raman measurements, reveals the transition of thermal-expansion-induced interface straining of nanotubes, which shifts from compression to tension inside the ceramic matrix under thermal loadings. This study provides valuable insights into the thermomechanical behavior of BNNT-reinforced ceramic nanocomposites and contributes to the optimal design of ceramic materials with tunable and zero CTE.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"36 6","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142740005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-28DOI: 10.1088/1361-6528/ad947d
Artemisa Mazón-Martínez, Tupak García-Fernández, Marco Antonio Martínez-Fuentes, Citlali Sánchez-Aké
This study investigates the fluence-dependent evolution of gold nanoparticles formed through single nanosecond pulsed laser dewetting of a gold thin film on a fused silica substrate. By employing a well-defined Airy-like laser spatial profile and reconstructing scanning electron microscope images across the irradiation spot into a panoramic view, we achieve a detailed continuous analysis of the nanoparticle formation process. Our morphological analysis, combined with finite element thermal simulations directly correlated with the applied fluence, identifies two distinct thresholds. The first threshold corresponds to the dewetting of the gold film at its melting point, resulting in large, sparse nanoparticles. The second threshold, where the substrate temperature reaches values near its melting point, leads to the formation of numerous small nanoparticles and a significant increase in coverage area. Notably, the formation of these small nanoparticles is attributed to substrate heating, which alters the interaction between the molten gold film and the substrate, increasing adhesion. Contact angle measurements of the nanoparticles confirm this change, revealing a shift in wettability, and highlighting the crucial role of substrate heating in modulating the interactions leading to nanoparticle formation. Our findings underscore the intricate interplay between laser fluence, material properties, and substrate interactions in pulsed laser dewetting, with the well-defined laser profile offering valuable insights into these dynamics.
本研究探讨了通过单纳秒脉冲激光对熔融石英基底上的金薄膜进行脱墨形成的金纳米粒子随通量变化的过程。通过采用定义明确的类似空气的激光空间轮廓,并将整个照射光斑的 SEM 图像重构为全景图,我们实现了对纳米粒子形成过程的详细连续分析。我们的形态分析与有限元热模拟相结合,直接与所应用的通量相关,确定了两个不同的阈值。第一个阈值对应于金薄膜在其熔点处的润湿,从而形成大而稀疏的纳米粒子。第二个阈值是基底温度达到接近熔点的值,会形成大量的小纳米颗粒,覆盖面积显著增加。值得注意的是,这些小纳米颗粒的形成是由于基底加热改变了熔融金膜与基底之间的相互作用,从而增加了附着力。对纳米颗粒的接触角测量证实了这一变化,揭示了润湿性的变化,突出了基底加热在调节导致纳米颗粒形成的相互作用中的关键作用。我们的研究结果凸显了脉冲激光润湿过程中激光能量、材料特性和基底相互作用之间错综复杂的相互作用,明确的激光轮廓为了解这些动态提供了宝贵的信息。
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In recent years, flexible pressure sensors have been seen widespread adoption in various fields such as electronic skin, smart wearables, and human-computer interaction systems. Owing to the electrical conductivity and adaptability to flexible substrates, vertical graphene nanowalls (VGNs) have recently been recognized as promising materials for pressure-sensing applications. Our study presented the synthesis of high-quality VGNs via plasma enhanced chemical vapor deposition and the incorporation of a metal layer by electron beam evaporation, forming a stacked structure of VGNs/Metal/VGNs. Metal nanoparticles attached to the edges and surfaces of graphene nanosheets can alter the charge transport paths within the material to enhance the responsiveness of the sensor. This layered structure effectively fulfilled the requirements of flexible pressure sensors, exhibiting high sensitivity (40.15 kPa-1), low response time (88 ms), and short recovery time (97 ms). The pressure sensitivity remained intact even after 1000 bending cycles. Additionally, the factors contributing to the impressive pressure-sensing performance of this composite were found and its capability to detect human pulse and finger flexion signals was demonstrated, making it a promising candidate for applications of wearable electronics devices.
{"title":"Flexible pressure sensor with metallic reinforcement and graphene nanowalls for wearable electronics device.","authors":"Jingzhe Zhang, Honglie Shen, Weibiao Mao, Zehui Wang, Bingjie Liao, Yufang Li, Tianru Wu","doi":"10.1088/1361-6528/ad93df","DOIUrl":"10.1088/1361-6528/ad93df","url":null,"abstract":"<p><p>In recent years, flexible pressure sensors have been seen widespread adoption in various fields such as electronic skin, smart wearables, and human-computer interaction systems. Owing to the electrical conductivity and adaptability to flexible substrates, vertical graphene nanowalls (VGNs) have recently been recognized as promising materials for pressure-sensing applications. Our study presented the synthesis of high-quality VGNs via plasma enhanced chemical vapor deposition and the incorporation of a metal layer by electron beam evaporation, forming a stacked structure of VGNs/Metal/VGNs. Metal nanoparticles attached to the edges and surfaces of graphene nanosheets can alter the charge transport paths within the material to enhance the responsiveness of the sensor. This layered structure effectively fulfilled the requirements of flexible pressure sensors, exhibiting high sensitivity (40.15 kPa<sup>-1</sup>), low response time (88 ms), and short recovery time (97 ms). The pressure sensitivity remained intact even after 1000 bending cycles. Additionally, the factors contributing to the impressive pressure-sensing performance of this composite were found and its capability to detect human pulse and finger flexion signals was demonstrated, making it a promising candidate for applications of wearable electronics devices.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142668526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}