首页 > 最新文献

Nanotechnology最新文献

英文 中文
Magnetic ordering in moiré graphene multilayers from a continuum Hartree+Uapproach. 基于连续统Hartree+U方法的莫尔莫尔石墨烯多层膜的磁有序。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-19 DOI: 10.1088/1361-6528/ae2d5e
Christopher T S Cheung, Valerio Vitale, Lennart Klebl, Ammon Fischer, Dante M Kennes, Arash A Mostofi, Johannes Lischner, Zachary A H Goodwin

Recently, symmetry-broken ground states, such as correlated insulating states, magnetic order and superconductivity, have been discovered in twisted bilayer graphene (tBLG) and twisted trilayer graphene (tTLG) near the so-called magic angles. Understanding the magnetic order in these systems is challenging, however, as atomistic methods become extremely expensive near the magic angle and continuum approaches fail to capture important atomistic details. In this work, we develop an approach to incorporate short-ranged Hubbard interactions self-consistently in a continuum model. In addition, we include long-ranged Coulomb interactions which are known to be important when doping the flat bands of tBLG and tTLG. Therefore, for the first time, magnetic order in moiré graphene multilayers is self-consistently explored in a continuum model with atomistic detail. With this approach, we perform a systematic analysis of the magnetic phase diagram of tBLG as a function of doping level and twist angle, near the magic angle. Our results are consistent with previous perturbative atomistic Hartree+Ucalculations. Furthermore, we investigated magnetic order of tTLG, which were found to be similar to those in tBLG. In the future, the developed continuum model can be utilized to investigate magnetic ordering tendencies from short-range exchange interactions in other moiré graphene multilayers as a function of doping, twist angle, screening environment, among other variables.

近年来,在所谓的魔角附近,扭曲双层石墨烯(tBLG)和扭曲三层石墨烯(tTLG)中发现了相关绝缘态、磁序态和超导性等对称破缺基态。然而,理解这些系统中的磁顺序是具有挑战性的,因为原子方法在魔角附近变得极其昂贵,连续体方法无法捕获重要的原子细节。在这项工作中,我们开发了一种将短程哈伯德相互作用自洽地纳入连续体模型的方法。此外,我们还包括了长程库仑相互作用,这在掺杂tBLG和tTLG的平带时是很重要的。因此,首次在具有原子细节的连续介质模型中自洽地探索了莫尔奈石墨烯多层中的磁序。利用这种方法,我们系统地分析了tBLG的磁相图作为掺杂水平和扭曲角(接近魔角)的函数。我们的结果与先前的微扰原子Hartree+U计算一致。此外,我们还研究了tTLG的磁序,发现tTLG的磁序与tBLG相似。在未来,所建立的连续介质模型可用于研究其他莫尔莫尔石墨烯多层膜中短程交换相互作用的磁有序趋势,作为掺杂,扭转角,筛选环境等变量的函数。
{"title":"Magnetic ordering in moiré graphene multilayers from a continuum Hartree+<i>U</i>approach.","authors":"Christopher T S Cheung, Valerio Vitale, Lennart Klebl, Ammon Fischer, Dante M Kennes, Arash A Mostofi, Johannes Lischner, Zachary A H Goodwin","doi":"10.1088/1361-6528/ae2d5e","DOIUrl":"10.1088/1361-6528/ae2d5e","url":null,"abstract":"<p><p>Recently, symmetry-broken ground states, such as correlated insulating states, magnetic order and superconductivity, have been discovered in twisted bilayer graphene (tBLG) and twisted trilayer graphene (tTLG) near the so-called magic angles. Understanding the magnetic order in these systems is challenging, however, as atomistic methods become extremely expensive near the magic angle and continuum approaches fail to capture important atomistic details. In this work, we develop an approach to incorporate short-ranged Hubbard interactions self-consistently in a continuum model. In addition, we include long-ranged Coulomb interactions which are known to be important when doping the flat bands of tBLG and tTLG. Therefore, for the first time, magnetic order in moiré graphene multilayers is self-consistently explored in a continuum model with atomistic detail. With this approach, we perform a systematic analysis of the magnetic phase diagram of tBLG as a function of doping level and twist angle, near the magic angle. Our results are consistent with previous perturbative atomistic Hartree+<i>U</i>calculations. Furthermore, we investigated magnetic order of tTLG, which were found to be similar to those in tBLG. In the future, the developed continuum model can be utilized to investigate magnetic ordering tendencies from short-range exchange interactions in other moiré graphene multilayers as a function of doping, twist angle, screening environment, among other variables.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145768406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuning electrical performance of dual-gate semiconducting graphene field-effect transistor using plasma parameters. 利用等离子体参数调谐双栅半导体石墨烯场效应晶体管的电性能。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-16 DOI: 10.1088/1361-6528/ae33c8
Monika Verma, Suresh C Sharma

This research outlines a simulation-based analysis of dual-gate semiconducting graphene field-effect transistors (GFETs) constructed using vertically aligned synthesized graphene via plasma-enhanced chemical vapor deposition (PECVD) technique. Using SILVACO TCAD software, the study investigates the impact of varying plasma parameters-specifically electron and ion temperatures, and densities-each associated with different graphene channel thicknesses. Distinct combinations of plasma electron/ion temperature and density were investigated; each linked to a specific graphene channel thickness. The study focused on the electrical properties of the dual gate semiconducting GFET, comparing them with the existing experimental observations and correlating these properties with the plasma processing parameters. It was seen that the values of these properties, like drain current,Ion/Ioff current ratio, transconductancegm, cutoff frequencyfc, etc., increased on decreasing the plasma parameters of the PECVD process involved. The relations developed can be used to modulate the properties of plasma-grown GFETs, by scaling them down for industrial use in several concerned sectors of high-frequency circuits, solar cells, supercapacitors and biosensing technologies. These findings provide a theoretical framework to support future experimental validation and process optimization.

本研究概述了双栅极半导体石墨烯场效应晶体管(gfet)的仿真分析,该晶体管采用等离子体增强化学气相沉积(PECVD)技术,采用垂直排列的合成石墨烯构建。使用SILVACO TCAD软件,该研究调查了不同等离子体参数的影响,特别是电子和离子温度,以及密度,每个参数都与不同的石墨烯通道厚度相关。研究了等离子体电子/离子温度和密度的不同组合;每一个都连接到一个特定的石墨烯通道厚度。研究重点是双栅半导体GFET的电学特性,将它们与现有的实验观察结果进行比较,并将这些特性与等离子体处理参数相关联。结果表明,随着等离子体参数的减小,漏极电流、离子/断流比、跨导、截止频率等特性值均增大。所开发的关系可用于调制等离子体生长的gfet的特性,通过将其缩小到高频电路,太阳能电池,超级电容器和生物传感技术等几个相关部门的工业用途。这些发现为支持未来的实验验证和工艺优化提供了理论框架。
{"title":"Tuning electrical performance of dual-gate semiconducting graphene field-effect transistor using plasma parameters.","authors":"Monika Verma, Suresh C Sharma","doi":"10.1088/1361-6528/ae33c8","DOIUrl":"https://doi.org/10.1088/1361-6528/ae33c8","url":null,"abstract":"<p><p>This research outlines a simulation-based analysis of dual-gate semiconducting graphene field-effect transistors (GFETs) constructed using vertically aligned synthesized graphene via plasma-enhanced chemical vapor deposition (PECVD) technique. Using SILVACO TCAD software, the study investigates the impact of varying plasma parameters-specifically electron and ion temperatures, and densities-each associated with different graphene channel thicknesses. Distinct combinations of plasma electron/ion temperature and density were investigated; each linked to a specific graphene channel thickness. The study focused on the electrical properties of the dual gate semiconducting GFET, comparing them with the existing experimental observations and correlating these properties with the plasma processing parameters. It was seen that the values of these properties, like drain current,<i>I</i>on/<i>I</i>off current ratio, transconductance<i>g</i><sub>m</sub>, cutoff frequency<i>f</i><sub>c</sub>, etc., increased on decreasing the plasma parameters of the PECVD process involved. The relations developed can be used to modulate the properties of plasma-grown GFETs, by scaling them down for industrial use in several concerned sectors of high-frequency circuits, solar cells, supercapacitors and biosensing technologies. These findings provide a theoretical framework to support future experimental validation and process optimization.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145990111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Half-metallicity induced by Cr atoms on the surface of ultra-thin Cr2Te3 film: first principles study. 超薄Cr2Te3薄膜表面Cr原子诱导的半金属性:第一性原理研究。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-16 DOI: 10.1088/1361-6528/ae395f
Rishiram Ranabhat, Saif Almutairi, Ming Yu

Non-van der Waals layered transition metal chalcogenide Cr₂Te₃ exhibits unique properties including perpendicular magnetic anisotropy, anomalous Hall effect, and non-trivial band topology. Our first principles study further reveals that, induced by the surface Cr atoms, a transition from metallicity to a half-metallicity could occur when Cr2Te3 is reduced to an ultrathin film. The synergistic effect induced by the surface termination and the thickness of the film was found to play a crucial role in this transition. Specifically, a correlation between the bonding symmetry broken on the surface Cr, the strong orbital hybridization between surface Cr and Te atoms, and the squeeze of spin-down valence bands associated with Te-5p orbitals below the Fermi level was found in such ultra-thin 2D Cr2Te3 film during this transition. Such a finding provides key insights into the tunability of Cr₂Te₃ on its spintronic properties by modulating its thickness and surface termination, making it a potential application for designing highperformance spintronic devices.

非范德华层状过渡金属硫族化物Cr₂Te₃具有独特的性质,包括垂直磁各向异性、反常霍尔效应和非平凡带拓扑结构。我们的第一性原理研究进一步表明,在表面Cr原子的诱导下,当Cr2Te3还原成超薄薄膜时,可能发生从金属丰度到半金属丰度的转变。发现由表面终止和薄膜厚度引起的协同效应在这种转变中起着至关重要的作用。具体来说,在这种超薄2D Cr2Te3薄膜中,发现了Cr表面键对称断裂、Cr和Te表面原子之间的强轨道杂化以及与Te-5p轨道相关的自旋向下价带在费米能级以下的挤压之间的相关性。这一发现通过调节Cr₂Te₃的厚度和表面末端,为其自旋电子性质的可调性提供了关键的见解,使其成为设计高性能自旋电子器件的潜在应用。
{"title":"Half-metallicity induced by Cr atoms on the surface of ultra-thin Cr2Te3 film: first principles study.","authors":"Rishiram Ranabhat, Saif Almutairi, Ming Yu","doi":"10.1088/1361-6528/ae395f","DOIUrl":"https://doi.org/10.1088/1361-6528/ae395f","url":null,"abstract":"<p><p>Non-van der Waals layered transition metal chalcogenide Cr₂Te₃ exhibits unique properties including perpendicular magnetic anisotropy, anomalous Hall effect, and non-trivial band topology. Our first principles study further reveals that, induced by the surface Cr atoms, a transition from metallicity to a half-metallicity could occur when Cr2Te3 is reduced to an ultrathin film. The synergistic effect induced by the surface termination and the thickness of the film was found to play a crucial role in this transition. Specifically, a correlation between the bonding symmetry broken on the surface Cr, the strong orbital hybridization between surface Cr and Te atoms, and the squeeze of spin-down valence bands associated with Te-5p orbitals below the Fermi level was found in such ultra-thin 2D Cr2Te3 film during this transition. Such a finding provides key insights into the tunability of Cr₂Te₃ on its spintronic properties by modulating its thickness and surface termination, making it a potential application for designing highperformance spintronic devices.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145990046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Controlled growth of vertical graphene nanosheets via plasma flow screening. 通过等离子体流筛选控制垂直石墨烯纳米片的生长。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-15 DOI: 10.1088/1361-6528/ae38e9
Mohammed Bahabri, Jordan N Figueiredo, Yahya Kara, Deanna A Lacoste, Majed A Alrefae, Gilles Lubineau

In this study, the growth of vertical graphene (VG) nanosheets on copper (Cu) substrates in a direct-current plasma-enhanced chemical vapor deposition (PECVD) system was studied. The plasma process during the VG growth was characterized using a high-speed camera and optical emission spectroscopy. Results showed that the plasma composition remained constant, but the overall plasma intensity increased with increasing substrate open area (OA). At low OAs of > 0.05, VG growth was limited to edges, and the VG height increased gradually to reach 700 nm as more reactants became readily available. Two distinctive regimes were identified: diffusion-limited growth at OAs < 0.6, and kinetic-limited growth at OAs > 0.6 for Cu meshes and screens. Under the diffusion-limited regime, VG growth occurred preferentially from the substrate edge toward the center. Therefore, the deposition time was extended to achieve uniform VG deposition. However, in the kinetic-limited regime, the increased availability of reactants did not alter the VG height, which remained at 700 nm. The kinetic-limited deposition was uniform across the substrate due to less plasma screening. This study sheds light on the growth mechanism of VG on perforated substrates, opening new avenues to control deposition on Cu substrates within plasma-screened interfaces.

在这项研究中,研究了在直流等离子体增强化学气相沉积(PECVD)系统中在铜(Cu)衬底上生长垂直石墨烯(VG)纳米片。利用高速相机和发射光谱技术对等离子体生长过程进行了表征。结果表明,等离子体成分保持不变,但总体等离子体强度随底物开放面积(OA)的增加而增加。在低OAs(> 0.05)时,VG的生长仅限于边缘,随着反应物的增加,VG的高度逐渐增加,达到700 nm。发现了两种不同的生长机制:在OAs < 0.6时扩散受限生长,在OAs >.6时动力学受限生长。在扩散限制条件下,VG生长优先从衬底边缘向中心生长。因此,延长沉积时间以达到均匀的VG沉积。然而,在动力学受限的情况下,反应物可用性的增加并没有改变VG高度,保持在700 nm。由于较少的等离子体筛选,动力学限制的沉积在衬底上是均匀的。这项研究揭示了VG在穿孔基板上的生长机制,为控制等离子体屏蔽界面内Cu基板上的沉积开辟了新的途径。
{"title":"Controlled growth of vertical graphene nanosheets via plasma flow screening.","authors":"Mohammed Bahabri, Jordan N Figueiredo, Yahya Kara, Deanna A Lacoste, Majed A Alrefae, Gilles Lubineau","doi":"10.1088/1361-6528/ae38e9","DOIUrl":"https://doi.org/10.1088/1361-6528/ae38e9","url":null,"abstract":"<p><p>In this study, the growth of vertical graphene (VG) nanosheets on copper (Cu) substrates in a direct-current plasma-enhanced chemical vapor deposition (PECVD) system was studied. The plasma process during the VG growth was characterized using a high-speed camera and optical emission spectroscopy. Results showed that the plasma composition remained constant, but the overall plasma intensity increased with increasing substrate open area (OA). At low OAs of > 0.05, VG growth was limited to edges, and the VG height increased gradually to reach 700 nm as more reactants became readily available. Two distinctive regimes were identified: diffusion-limited growth at OAs < 0.6, and kinetic-limited growth at OAs > 0.6 for Cu meshes and screens. Under the diffusion-limited regime, VG growth occurred preferentially from the substrate edge toward the center. Therefore, the deposition time was extended to achieve uniform VG deposition. However, in the kinetic-limited regime, the increased availability of reactants did not alter the VG height, which remained at 700 nm. The kinetic-limited deposition was uniform across the substrate due to less plasma screening. This study sheds light on the growth mechanism of VG on perforated substrates, opening new avenues to control deposition on Cu substrates within plasma-screened interfaces.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145985138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine learning-enhanced nanofiber systems: A new frontier in controlled drug release. 机器学习增强纳米纤维系统:控制药物释放的新前沿。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-15 DOI: 10.1088/1361-6528/ae38e7
Gabriella Onila Nascimento Soares, Vitor Santi, Andrey Coatrini Soares, Diego Sousa, Sarah Oliveira Lamas de Souza, Osvaldo Novais de Oliveira

The use of machine learning (ML) is reshaping the design and optimization of nanofiber-based drug delivery systems (N-DDS). Electrospun nanofibers offer high surface area, tunable porosity, and versatile drug encapsulation strategies, making them attractive for controlled release applications in multiple therapeutic areas. However, the optimization of materials, fabrication conditions, encapsulation strategies, and release mechanisms is challenging due to the multitude of interdependent parameters. This review outlines how ML has been applied to accelerate N-DDS development, replacing traditional trial-and-error approaches with predictive and adaptive models. We first present a bibliometric landscape of the literature on nanofibers and drug delivery systems (DDS), highlighting the role of electrospinning. We then discuss recent applications of ML in polymer selection, electrospinning optimization, encapsulation strategies, and drug release kinetics. Special attention is given to case studies where ML models achieved high predictive accuracy in tailoring nanofiber morphology, encapsulation efficiency, and release profiles. We also elaborate upon the key challenges for clinical translation, including data quality, scalability, sustainability, and ethical concerns. By integrating ML and other artificial intelligence (AI) methods with nanofiber engineering, N-DDS can progress toward patient-specific, sustainable, and industrially scalable therapeutic platforms, opening new frontiers in precision medicine.

机器学习(ML)的使用正在重塑基于纳米纤维的给药系统(N-DDS)的设计和优化。静电纺纳米纤维具有高表面积、可调孔隙度和多用途的药物包封策略,使其在多种治疗领域的控释应用具有吸引力。然而,由于相互依赖的参数众多,材料、制造条件、封装策略和释放机制的优化具有挑战性。本文概述了机器学习如何应用于加速N-DDS的开发,用预测和自适应模型取代传统的试错方法。我们首先介绍了纳米纤维和药物输送系统(DDS)的文献计量学景观,强调了静电纺丝的作用。然后讨论了ML在聚合物选择、静电纺丝优化、包封策略和药物释放动力学方面的最新应用。特别关注的案例研究,其中ML模型在剪裁纳米纤维形态,封装效率和释放概况方面取得了很高的预测准确性。我们还详细阐述了临床翻译面临的主要挑战,包括数据质量、可扩展性、可持续性和伦理问题。通过将机器学习和其他人工智能(AI)方法与纳米纤维工程相结合,N-DDS可以朝着针对患者的、可持续的、工业可扩展的治疗平台发展,为精准医疗开辟新的领域。
{"title":"Machine learning-enhanced nanofiber systems: A new frontier in controlled drug release.","authors":"Gabriella Onila Nascimento Soares, Vitor Santi, Andrey Coatrini Soares, Diego Sousa, Sarah Oliveira Lamas de Souza, Osvaldo Novais de Oliveira","doi":"10.1088/1361-6528/ae38e7","DOIUrl":"https://doi.org/10.1088/1361-6528/ae38e7","url":null,"abstract":"<p><p>The use of machine learning (ML) is reshaping the design and optimization of nanofiber-based drug delivery systems (N-DDS). Electrospun nanofibers offer high surface area, tunable porosity, and versatile drug encapsulation strategies, making them attractive for controlled release applications in multiple therapeutic areas. However, the optimization of materials, fabrication conditions, encapsulation strategies, and release mechanisms is challenging due to the multitude of interdependent parameters. This review outlines how ML has been applied to accelerate N-DDS development, replacing traditional trial-and-error approaches with predictive and adaptive models. We first present a bibliometric landscape of the literature on nanofibers and drug delivery systems (DDS), highlighting the role of electrospinning. We then discuss recent applications of ML in polymer selection, electrospinning optimization, encapsulation strategies, and drug release kinetics. Special attention is given to case studies where ML models achieved high predictive accuracy in tailoring nanofiber morphology, encapsulation efficiency, and release profiles. We also elaborate upon the key challenges for clinical translation, including data quality, scalability, sustainability, and ethical concerns. By integrating ML and other artificial intelligence (AI) methods with nanofiber engineering, N-DDS can progress toward patient-specific, sustainable, and industrially scalable therapeutic platforms, opening new frontiers in precision medicine.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145985207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gold impurity concentration in vapor-liquid-solid grown GaAs nanowires. 气液-固相生长砷化镓纳米线中金杂质浓度。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-13 DOI: 10.1088/1361-6528/ae308f
Amin Mirzai, Aylin Ahadi, Jonas Johansson

Gold particles are commonly used as catalysts in the vapor-liquid-solid (VLS) growth of GaAs nanowires, but the incorporation of gold into the nanowires can negatively affect their electronic and optical properties. In this work, we investigate the equilibrium concentration of Au in GaAs nanowires using density functional theory calculations combined with thermodynamically assessed chemical potentials. Our results show that under typical VLS growth conditions, the Au concentration is strongly influenced by the growth temperature and the Ga concentration in the catalyst alloy particle. We find that minimizing Au incorporation requires low growth temperatures and high Ga content in the particles. The predicted equilibrium Au concentrations are consistent with experimental data, offering theoretical guidance for minimizing Au contamination during nanowire growth.

摘要在气-液-固(VLS)生长的GaAs纳米线中,金颗粒通常被用作催化剂,但金的掺入会对其电子和光学性能产生负面影响。在这项工作中,我们使用密度泛函理论(DFT)计算结合热力学评估的化学势来研究砷化镓纳米线中Au的平衡浓度。结果表明,在典型的VLS生长条件下,Au浓度受生长温度和催化剂合金颗粒中Ga浓度的强烈影响。我们发现最小化Au掺入需要低生长温度和高Ga含量的颗粒。预测的平衡金浓度与实验数据一致,为最小化纳米线生长过程中的金污染提供了理论指导。
{"title":"Gold impurity concentration in vapor-liquid-solid grown GaAs nanowires.","authors":"Amin Mirzai, Aylin Ahadi, Jonas Johansson","doi":"10.1088/1361-6528/ae308f","DOIUrl":"10.1088/1361-6528/ae308f","url":null,"abstract":"<p><p>Gold particles are commonly used as catalysts in the vapor-liquid-solid (VLS) growth of GaAs nanowires, but the incorporation of gold into the nanowires can negatively affect their electronic and optical properties. In this work, we investigate the equilibrium concentration of Au in GaAs nanowires using density functional theory calculations combined with thermodynamically assessed chemical potentials. Our results show that under typical VLS growth conditions, the Au concentration is strongly influenced by the growth temperature and the Ga concentration in the catalyst alloy particle. We find that minimizing Au incorporation requires low growth temperatures and high Ga content in the particles. The predicted equilibrium Au concentrations are consistent with experimental data, offering theoretical guidance for minimizing Au contamination during nanowire growth.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145820312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine learning for layer number identification of black phosphorus based on Raman spectra. 基于拉曼光谱的黑磷层数识别机器学习。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-13 DOI: 10.1088/1361-6528/ae3322
Xingshuo Feng, Wei Chen, Zongyu Huang, Jun Li, Xiang Qi

Black phosphorus (BP) is a novel two-dimensional (2D) material with tunable electronic and optical properties. Thickness is a pivotal parameter in defining the electronic, optical, and thermal properties of 2D crystals. Determining the thickness of a material is crucial to studying its properties. However, conventional characterization methods for the directly determination of thick layers of BP are complex and inefficient. In this paper, we propose a machine learning (ML)-based method that can efficiently and accurately determine the layer number of BP. The features of the three characteristic peaks (Ag1,B2g, andAg2) were extracted from the Raman spectra, including peak position, intensity, full width at half maximum, and integrated intensity. Subsequently, we found that the intensity ratio of the substrate (Si) peak to the Raman mode is crucial to predicting the number of layers by feature importance analysis. This study makes a key contribution by presenting, for the first time, a comparative analysis of multiple ML algorithms for identifying the layer number of BP. Furthermore, it identifies a specific set of discriminative features tailored for BP's Raman spectra. Finally, by synergistically augmenting the dataset and refining the model architecture, we effectively mitigated the performance limitations imposed by the small dataset. The performance of the model is evaluated based onR2, mean square error, and mean absolute error, where theR2of all algorithms is not less than 0.9. ML models can accurately predict the number of layers of BP material. ML algorithms can automatically learn from the data and optimize the algorithm to improve the efficiency and accuracy of the model. This not only reduces the analysis burden on researchers but also promotes the in-depth application of artificial intelligence in 2D material characterization.

黑磷(BP)是一种新型的二维(2D)材料,具有可调谐的电子和光学特性。厚度是定义二维晶体的电子、光学和热性能的关键参数。确定材料的厚度对研究其性能至关重要。然而,传统的直接测定BP厚层的表征方法既复杂又低效。在本文中,我们提出了一种基于机器学习的方法,可以高效准确地确定BP的层数。从实验cha中提取了三个特征峰(A1g、B2g和A2g)的特征,包括峰位置、强度、半最大值全宽度和综合强度。随后,我们发现衬底(Si)峰与拉曼模式的强度比对于通过特征重要性分析预测层数至关重要。通过协同增强数据集和改进模型架构,我们有效地缓解了小数据集带来的性能限制。基于R2、均方误差(MSE)和平均绝对误差(MAE)对模型的性能进行评价,其中所有算法的R2均不小于0.9。机器学习模型可以准确预测黑磷材料的层数。机器学习算法可以自动从数据中学习并优化算法,以提高模型的效率和准确性。这不仅减轻了研究人员的分析负担,也促进了人工智能在二维材料表征中的深入应用。
{"title":"Machine learning for layer number identification of black phosphorus based on Raman spectra.","authors":"Xingshuo Feng, Wei Chen, Zongyu Huang, Jun Li, Xiang Qi","doi":"10.1088/1361-6528/ae3322","DOIUrl":"10.1088/1361-6528/ae3322","url":null,"abstract":"<p><p>Black phosphorus (BP) is a novel two-dimensional (2D) material with tunable electronic and optical properties. Thickness is a pivotal parameter in defining the electronic, optical, and thermal properties of 2D crystals. Determining the thickness of a material is crucial to studying its properties. However, conventional characterization methods for the directly determination of thick layers of BP are complex and inefficient. In this paper, we propose a machine learning (ML)-based method that can efficiently and accurately determine the layer number of BP. The features of the three characteristic peaks (Ag1,B2g, andAg2) were extracted from the Raman spectra, including peak position, intensity, full width at half maximum, and integrated intensity. Subsequently, we found that the intensity ratio of the substrate (Si) peak to the Raman mode is crucial to predicting the number of layers by feature importance analysis. This study makes a key contribution by presenting, for the first time, a comparative analysis of multiple ML algorithms for identifying the layer number of BP. Furthermore, it identifies a specific set of discriminative features tailored for BP's Raman spectra. Finally, by synergistically augmenting the dataset and refining the model architecture, we effectively mitigated the performance limitations imposed by the small dataset. The performance of the model is evaluated based onR2, mean square error, and mean absolute error, where theR2of all algorithms is not less than 0.9. ML models can accurately predict the number of layers of BP material. ML algorithms can automatically learn from the data and optimize the algorithm to improve the efficiency and accuracy of the model. This not only reduces the analysis burden on researchers but also promotes the in-depth application of artificial intelligence in 2D material characterization.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145906278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A first-principles study of the reactivity and layer-dependent properties of phosphorene. 磷烯的反应性和层依赖性质的第一性原理研究。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-12 DOI: 10.1088/1361-6528/ae2f67
Saba Abdul Shakoor, Michael Nolan

Phosphorene exhibits promising tribological application due to its layered structure that imparts intrinsic lubricating properties. Understanding the mechanisms by which oxygen and other ambient species modify phosphorene remains a key challenge, with the impact of the layer thickness and point defects still unknown. Despite its promise as a solid-state lubricant, detailed nanoscale understanding of layer-dependent defect formation, surface reactivity, and potential degradation is still limited. In particular, the possible multilayer-dependent degradation behaviour of phosphorene in the presence of common environmental species such as hydrogen (H), oxygen (O), and hydroxyl (OH) has received little attention. In this work, we perform a systematic density functional theory investigation to explore how these chemical species interact with monolayer to four-layer phosphorene, including systems with and without phosphorus vacancies. Our findings show that H, OH adsorption is energetically not favourable in any layer configurations, while O shows strong exothermic interactions across all thicknesses, regardless of the presence of defects, with the bilayer showing the most favourable interaction with these species. Structural responses, including changes in bond lengths and interlayer spacing, were quantified and found to depend on both the type of adsorbate and the number of layers. The presence of vacancies induces localized distortions but does not compromise the overall structural integrity. Bader charge calculations show charge transfer between phosphorene layers and adsorbates. Overall, our results set a foundation for further work on phosphorene by providing a detailed, layer-by-layer understanding of phosphorene's chemical reactivity in ambient environments and highlight the need to consider layer number, intrinsic defects and environmental species in models of phosphorene.

由于磷烯的层状结构赋予其固有的润滑性能,它在摩擦学上的应用前景广阔。了解氧和其他环境物质修饰磷烯的机制仍然是一个关键的挑战,层厚度和点缺陷的影响仍然未知。尽管它有望成为固态润滑剂,但对层相关缺陷形成、表面反应性和潜在降解的详细纳米级理解仍然有限。特别是,在常见的环境物质如氢(H)、氧(O)和羟基(OH)存在下,磷烯可能的多层依赖降解行为很少受到关注。在这项工作中,我们进行了系统密度泛函理论(DFT)研究,以探索这些化学物质如何与单层到四层磷烯相互作用,包括有和没有磷空位的系统。我们的研究结果表明,在任何层构型中,H、OH的吸附在能量上都不有利,而O在所有厚度上都表现出强烈的放热相互作用,无论是否存在缺陷,与这些物质的双分子层表现出最有利的相互作用。结构响应,包括键长和层间间距的变化,被量化并发现取决于吸附质的类型和层数。空位的存在引起局部扭曲,但不会损害整体结构的完整性。贝德电荷计算显示了磷烯层和吸附物之间的电荷转移。总的来说,我们的研究结果为进一步研究磷烯奠定了基础,提供了对磷烯在环境中的化学反应性的详细、层层理解,并强调了在磷烯模型中考虑层数、内在缺陷和环境物种的必要性。
{"title":"A first-principles study of the reactivity and layer-dependent properties of phosphorene.","authors":"Saba Abdul Shakoor, Michael Nolan","doi":"10.1088/1361-6528/ae2f67","DOIUrl":"10.1088/1361-6528/ae2f67","url":null,"abstract":"<p><p>Phosphorene exhibits promising tribological application due to its layered structure that imparts intrinsic lubricating properties. Understanding the mechanisms by which oxygen and other ambient species modify phosphorene remains a key challenge, with the impact of the layer thickness and point defects still unknown. Despite its promise as a solid-state lubricant, detailed nanoscale understanding of layer-dependent defect formation, surface reactivity, and potential degradation is still limited. In particular, the possible multilayer-dependent degradation behaviour of phosphorene in the presence of common environmental species such as hydrogen (H), oxygen (O), and hydroxyl (OH) has received little attention. In this work, we perform a systematic density functional theory investigation to explore how these chemical species interact with monolayer to four-layer phosphorene, including systems with and without phosphorus vacancies. Our findings show that H, OH adsorption is energetically not favourable in any layer configurations, while O shows strong exothermic interactions across all thicknesses, regardless of the presence of defects, with the bilayer showing the most favourable interaction with these species. Structural responses, including changes in bond lengths and interlayer spacing, were quantified and found to depend on both the type of adsorbate and the number of layers. The presence of vacancies induces localized distortions but does not compromise the overall structural integrity. Bader charge calculations show charge transfer between phosphorene layers and adsorbates. Overall, our results set a foundation for further work on phosphorene by providing a detailed, layer-by-layer understanding of phosphorene's chemical reactivity in ambient environments and highlight the need to consider layer number, intrinsic defects and environmental species in models of phosphorene.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145794420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of gate oxide instability of SiC MOSFETs under ultra-high gate voltage pulse stress. 超高栅极电压脉冲应力下SiC mosfet栅氧化不稳定性分析。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-12 DOI: 10.1088/1361-6528/ae2f68
Jingjing Tan, Hang Xu, Jianbin Guo, Lin Chen, Qingqing Sun, Hao Zhu

In power electronics, silicon carbide (SiC) MOSFETs can experience ultra-high gate voltage pulses during electrostatic events, yet their reliability under such extreme conditions remains insufficiently explored. In this work, we fabricate SiC MOSFETs and present systematic reliability evaluation under ultra-high gate pulse stress. Our results reveal that hole-related charge trapping dominates the degradation for both positive and negative gate stress. Under high positive pulses, the threshold voltage (Vth) exhibits a non-monotonic shift driven by hole injection, whereas under high negative pulses,Vthdecreases rapidly due to hole capture and the formation of additional donor-like traps. Moreover, the time and field dependence ofVthdegradation demonstrates that oxide breakdown is primarily caused by electric field stress. Overall, this study provides new insight into the degradation pathways of SiC MOSFETs under extreme electrical stress and offers practical guidance for improving device robustness in power applications.

在电力电子领域,碳化硅(SiC) mosfet可以在静电事件中经历超高栅极电压脉冲,但它们在这种极端条件下的可靠性仍然没有得到充分的探索。在这项工作中,我们制作了SiC mosfet,并提出了在超高栅极脉冲应力下的系统可靠性评估。我们的研究结果表明,在正负栅极应力下,空穴相关的电荷捕获主导了栅极应力的退化。在高正脉冲下,由空穴注入驱动的阈值电压(Vth)呈现非单调位移,而在高负脉冲下,由于空穴捕获和额外供体样陷阱的形成,Vth迅速下降。此外,Vth降解的时间和场依赖性表明,氧化分解主要是由电场应力引起的。总的来说,这项研究为SiC mosfet在极端电应力下的降解途径提供了新的见解,并为提高功率应用中的器件稳健性提供了实用指导。
{"title":"Analysis of gate oxide instability of SiC MOSFETs under ultra-high gate voltage pulse stress.","authors":"Jingjing Tan, Hang Xu, Jianbin Guo, Lin Chen, Qingqing Sun, Hao Zhu","doi":"10.1088/1361-6528/ae2f68","DOIUrl":"10.1088/1361-6528/ae2f68","url":null,"abstract":"<p><p>In power electronics, silicon carbide (SiC) MOSFETs can experience ultra-high gate voltage pulses during electrostatic events, yet their reliability under such extreme conditions remains insufficiently explored. In this work, we fabricate SiC MOSFETs and present systematic reliability evaluation under ultra-high gate pulse stress. Our results reveal that hole-related charge trapping dominates the degradation for both positive and negative gate stress. Under high positive pulses, the threshold voltage (<i>V</i><sub>th</sub>) exhibits a non-monotonic shift driven by hole injection, whereas under high negative pulses,<i>V</i><sub>th</sub>decreases rapidly due to hole capture and the formation of additional donor-like traps. Moreover, the time and field dependence of<i>V</i><sub>th</sub>degradation demonstrates that oxide breakdown is primarily caused by electric field stress. Overall, this study provides new insight into the degradation pathways of SiC MOSFETs under extreme electrical stress and offers practical guidance for improving device robustness in power applications.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145794499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Confining Ti2NbC2Tx MXene in carbon nanofibers to boost lithium-ion storage. 将Ti2NbC2Tx MXene限制在碳纳米纤维中以提高锂离子的存储能力。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-09 DOI: 10.1088/1361-6528/ae3618
Zhi Cao, Lei Lu, Dongliang Fan, Fengmei Guo

Lithium-ion batteries face challenges in achieving high energy density and long cycle life, due to limitations of conventional anode materials. MXenes, a class of two-dimensional materials, show great potential as anodes but suffer from low intrinsic capacity and severe nanosheet self-stacking.To overcome these issues, this study developed a double transition metal MXene, Ti 2 NbC 2 T x , which offers enlarged interlayer spacing and high electrical conductivity. To further address the selfstacking issue, a Ti 2 NbC 2 T x @CNFs (carbon nanofibers) composite was fabricated via electrospinning and subsequent carbonization. This structure uniformly embedded the MXene within a continuous conductive carbon matrix, effectively inhibiting self-stacking and facilitating electron/ion transport. As a lithium-ion battery anode, the composite demonstrated excellent electrochemical performance. A reversible capacity of 246.5 mAh g -1 was retained after 7000 cycles at a high current density of 5 A g -1 , demonstrating outstanding specific capacity and cycling stability.This work provides a viable strategy for developing high-performance MXene-based anodes for next-generation energy storage.

由于传统负极材料的限制,锂离子电池在实现高能量密度和长循环寿命方面面临挑战。MXenes是一类二维材料,作为阳极具有很大的潜力,但存在固有容量低和纳米片自堆积严重的问题。为了克服这些问题,本研究开发了一种双过渡金属MXene, Ti 2 NbC 2 tx,它提供了更大的层间距和高导电性。为了进一步解决自堆积问题,通过静电纺丝和随后的碳化制备了Ti 2 NbC 2 T x @CNFs(碳纳米纤维)复合材料。这种结构将MXene均匀地嵌入连续的导电碳基体中,有效地抑制了自堆积,促进了电子/离子的传递。作为锂离子电池负极,该复合材料表现出优异的电化学性能。在5a g -1的高电流密度下,经过7000次循环后仍保持246.5 mAh g -1的可逆容量,表现出出色的比容量和循环稳定性。这项工作为开发用于下一代储能的高性能mxene阳极提供了一种可行的策略。
{"title":"Confining Ti2NbC2Tx MXene in carbon nanofibers to boost lithium-ion storage.","authors":"Zhi Cao, Lei Lu, Dongliang Fan, Fengmei Guo","doi":"10.1088/1361-6528/ae3618","DOIUrl":"https://doi.org/10.1088/1361-6528/ae3618","url":null,"abstract":"<p><p>Lithium-ion batteries face challenges in achieving high energy density and long cycle life, due to limitations of conventional anode materials. MXenes, a class of two-dimensional materials, show great potential as anodes but suffer from low intrinsic capacity and severe nanosheet self-stacking.To overcome these issues, this study developed a double transition metal MXene, Ti 2 NbC 2 T x , which offers enlarged interlayer spacing and high electrical conductivity. To further address the selfstacking issue, a Ti 2 NbC 2 T x @CNFs (carbon nanofibers) composite was fabricated via electrospinning and subsequent carbonization. This structure uniformly embedded the MXene within a continuous conductive carbon matrix, effectively inhibiting self-stacking and facilitating electron/ion transport. As a lithium-ion battery anode, the composite demonstrated excellent electrochemical performance. A reversible capacity of 246.5 mAh g -1 was retained after 7000 cycles at a high current density of 5 A g -1 , demonstrating outstanding specific capacity and cycling stability.This work provides a viable strategy for developing high-performance MXene-based anodes for next-generation energy storage.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145945268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Nanotechnology
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1