Pub Date : 2026-01-02DOI: 10.1088/1361-6528/ae300b
Somaye Hosseingholi, Pantea Aurang
ZnO, anintrinsic n-typesemiconductor, has attracted considerable attention in optoelectronics. However, its application in broadband photoresponsivity is limited by its wide band gap. In this study, polyol-synthesized silver nanoparticles (Ag NPs) with controlled size were used to enhance the performance of n-type ZnO nanorods (NRs) and p-type Si heterojunction (ZnO NRs/Si) photodetectors (PDs). Photoluminescence spectra confirmed that the broadband emissions of the ZnO NRs, originating from crystal defects, efficiently overlapped with the localized surface plasmon resonance of the Ag NPs. Under illumination and a reverse bias voltage of 4.0 V, the photocurrent (Iph) of the detectors increased from 2.2 × 10-5-2.39 × 10-4after Ag NP decoration of the ZnO NRs. TheIph/Idarkratio of the pristine ZnO NRs/Si device was determined to be 5.5, which increased to 100 in the presence of the Ag NPs. The plasmonic-enhanced PD (Ag-decorated ZnO NRs/Si) exhibited broader and stronger spectral photoresponsivity from the UV-Vis to the NIR range. Responsivity and detectivity values of 0.39 A W-1and 2 × 10-11cm.Hz1/2W-1at 372 nm, and 0.42 A W-1and 4.2 × 10-11cm.Hz1/2W-1at 420 nm, were observed for this device. Overall, plasmon-enhanced ZnO NRs/Si PDs demonstrated enhanced broadband UV-Vis-NIR spectral response with high photocurrent values.
{"title":"Development of ZnO nanorods/Si heterojunction photodetectors for high responsivity across a wide spectral range via plasmonic Ag nanoparticles.","authors":"Somaye Hosseingholi, Pantea Aurang","doi":"10.1088/1361-6528/ae300b","DOIUrl":"10.1088/1361-6528/ae300b","url":null,"abstract":"<p><p>ZnO, an<i>intrinsic n-type</i>semiconductor, has attracted considerable attention in optoelectronics. However, its application in broadband photoresponsivity is limited by its wide band gap. In this study, polyol-synthesized silver nanoparticles (Ag NPs) with controlled size were used to enhance the performance of n-type ZnO nanorods (NRs) and p-type Si heterojunction (ZnO NRs/Si) photodetectors (PDs). Photoluminescence spectra confirmed that the broadband emissions of the ZnO NRs, originating from crystal defects, efficiently overlapped with the localized surface plasmon resonance of the Ag NPs. Under illumination and a reverse bias voltage of 4.0 V, the photocurrent (<i>I</i><sub>ph</sub>) of the detectors increased from 2.2 × 10<sup>-5</sup>-2.39 × 10<sup>-4</sup>after Ag NP decoration of the ZnO NRs. The<i>I</i><sub>ph</sub>/<i>I</i><sub>dark</sub>ratio of the pristine ZnO NRs/Si device was determined to be 5.5, which increased to 100 in the presence of the Ag NPs. The plasmonic-enhanced PD (Ag-decorated ZnO NRs/Si) exhibited broader and stronger spectral photoresponsivity from the UV-Vis to the NIR range. Responsivity and detectivity values of 0.39 A W<sup>-1</sup>and 2 × 10<sup>-11</sup>cm.Hz<sup>1/2</sup>W<sup>-1</sup>at 372 nm, and 0.42 A W<sup>-1</sup>and 4.2 × 10<sup>-11</sup>cm.Hz<sup>1/2</sup>W<sup>-1</sup>at 420 nm, were observed for this device. Overall, plasmon-enhanced ZnO NRs/Si PDs demonstrated enhanced broadband UV-Vis-NIR spectral response with high photocurrent values.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145810612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, Co-MOF arrays were used as a precursor to fabricate hierarchical catalysts. Heterostructure Co-MOF/Co(OH)2and Co(OH)2micro-nano sheet arrays were fabricated by etching treatment in ultrapure water for different time. When treated for 60 min, infrared spectrum and x-ray diffraction (XRD) pattern indicate that there is the co-existence of Co-MOF and Co(OH)2. After etching for 120 min, the scanning electron microscopy image reveals three-dimensional hierarchical micro-nano sheet arrays, the energy dispersive x-ray spectrum and XRD analysis indicate pure Co(OH)2phase with high crystallinity. Their glucose sensing performance is systematically explored by cyclic voltammetric and amperometrici-tcurves. The linear ranges of Co-MOF/Co(OH)2and Co(OH)2micro-nano sheet arrays are 0.05-2.2 mM (R2= 0.999) and 0.05-5.8 mM (R2= 0.999), their corresponding sensitivities are 1040μA mM-1cm-2and 884μA mM-1cm-2, respectively. Good glucose sensing performance of Co(OH)2micro-nano sheet arrays is attributed to its unique three-dimensional array structure which guarantees the sufficient diffusion of electrolyte and effective contact between glucose molecule and active sites. Further, the obtained hierarchical Co(OH)2electrode possesses good selectivity, stability, repeatability and practical detection ability.
本文采用Co-MOF阵列作为前驱体制备了分级催化剂。在超纯水中蚀刻不同时间制备了异质结构Co- mof /Co(OH)2和Co(OH)2微纳片阵列。处理60 min时,红外光谱和x射线衍射(XRD)图表明Co- mof和Co(OH)2共存。刻蚀120 min后,扫描电镜(SEM)图像显示三维分层微纳片阵列,x射线能谱(EDS)和x射线衍射(XRD)分析显示纯Co(OH)2相,结晶度高。通过循环伏安和安培i-t曲线系统地探索了它们的葡萄糖传感性能。Co- mof /Co(OH)2和Co(OH)2微纳片阵列的线性范围分别为0.05~2.2 mM (R2=0.999)和0.05~5.8 mM (R2=0.999),对应的灵敏度分别为1040 μA mM-1 cm-2和884 μA mM-1 cm-2。Co(OH)2微纳片阵列具有良好的葡萄糖传感性能,其独特的三维阵列结构保证了电解质的充分扩散和葡萄糖分子与活性位点的有效接触。此外,所制备的分层Co(OH)2电极具有良好的选择性、稳定性、重复性和实用的检测能力。
{"title":"The phase transformation from MOF to hierarchical catalysts and their non-enzymatic glucose sensing performance.","authors":"Yiquan Zeng, Qingduo Liu, Enxi Huang, Meiyu Yang, Yanbo Wang, Shupei Sun, Ping Sun","doi":"10.1088/1361-6528/ae2ae4","DOIUrl":"10.1088/1361-6528/ae2ae4","url":null,"abstract":"<p><p>Herein, Co-MOF arrays were used as a precursor to fabricate hierarchical catalysts. Heterostructure Co-MOF/Co(OH)<sub>2</sub>and Co(OH)<sub>2</sub>micro-nano sheet arrays were fabricated by etching treatment in ultrapure water for different time. When treated for 60 min, infrared spectrum and x-ray diffraction (XRD) pattern indicate that there is the co-existence of Co-MOF and Co(OH)<sub>2</sub>. After etching for 120 min, the scanning electron microscopy image reveals three-dimensional hierarchical micro-nano sheet arrays, the energy dispersive x-ray spectrum and XRD analysis indicate pure Co(OH)<sub>2</sub>phase with high crystallinity. Their glucose sensing performance is systematically explored by cyclic voltammetric and amperometric<i>i</i>-<i>t</i>curves. The linear ranges of Co-MOF/Co(OH)<sub>2</sub>and Co(OH)<sub>2</sub>micro-nano sheet arrays are 0.05-2.2 mM (<i>R</i><sup>2</sup>= 0.999) and 0.05-5.8 mM (<i>R</i><sup>2</sup>= 0.999), their corresponding sensitivities are 1040<i>μ</i>A mM<sup>-1</sup>cm<sup>-2</sup>and 884<i>μ</i>A mM<sup>-1</sup>cm<sup>-2</sup>, respectively. Good glucose sensing performance of Co(OH)<sub>2</sub>micro-nano sheet arrays is attributed to its unique three-dimensional array structure which guarantees the sufficient diffusion of electrolyte and effective contact between glucose molecule and active sites. Further, the obtained hierarchical Co(OH)<sub>2</sub>electrode possesses good selectivity, stability, repeatability and practical detection ability.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145724540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study presents the development of a frequency-controlled drug delivery platform employing gold (Au)-melittin (Mel) conjugates loaded onto titanium dioxide nanocylinders (TiO₂NCs) decorated with magnetic (M) nanoparticles (NPs). TiO₂NCs were synthesized via a multi-step anodization and sonication process, providing a high surface-area scaffold for drug loading, while MNPs enabled magnetically-responsive behavior. AuNPs were functionalized with Mel, a potent antimicrobial and anticancer peptide, to enhance its stability and minimize cytotoxicity. The resulting Au-Mel-loaded MNP-TiO₂NCs exhibited controlled drug release in response to alternating magnetic fields, with peak release occurring within 10 min under stimulation frequencies ranging from 10 Hz to 10 000 Hz. FTIR, TEM, EDX, and zeta potential analyses confirmed successful conjugation and integration of all components.In vitroantibacterial assays demonstrated effective inhibition ofE. coliby magnetically released Au-Mel, while cytotoxicity tests indicated selective activity against HepG2 liver cancer cells with minimal impact on HEK293 cells. This nanoplatform offers a promising solution for dual antibacterial and anticancer therapy with spatiotemporal control via external magnetic fields.
{"title":"Frequency-controlled magnetic release of gold-melittin conjugates from TiO<sub>₂</sub>nanocylinders for dual antimicrobial and cancer therapy.","authors":"Aekachai Phuttakhaw, Suttinart Noothongkaew, Kanchiyaphat Ariyachaokun, Warachin Gangnonngiw, Wilawan Thongda, Thatchaphon Phongsaphatcharamon","doi":"10.1088/1361-6528/ae2d5d","DOIUrl":"10.1088/1361-6528/ae2d5d","url":null,"abstract":"<p><p>This study presents the development of a frequency-controlled drug delivery platform employing gold (Au)-melittin (Mel) conjugates loaded onto titanium dioxide nanocylinders (TiO<sub>₂</sub>NCs) decorated with magnetic (M) nanoparticles (NPs). TiO<sub>₂</sub>NCs were synthesized via a multi-step anodization and sonication process, providing a high surface-area scaffold for drug loading, while MNPs enabled magnetically-responsive behavior. AuNPs were functionalized with Mel, a potent antimicrobial and anticancer peptide, to enhance its stability and minimize cytotoxicity. The resulting Au-Mel-loaded MNP-TiO<sub>₂</sub>NCs exhibited controlled drug release in response to alternating magnetic fields, with peak release occurring within 10 min under stimulation frequencies ranging from 10 Hz to 10 000 Hz. FTIR, TEM, EDX, and zeta potential analyses confirmed successful conjugation and integration of all components.<i>In vitro</i>antibacterial assays demonstrated effective inhibition of<i>E. coli</i>by magnetically released Au-Mel, while cytotoxicity tests indicated selective activity against HepG2 liver cancer cells with minimal impact on HEK293 cells. This nanoplatform offers a promising solution for dual antibacterial and anticancer therapy with spatiotemporal control via external magnetic fields.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145768427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-30DOI: 10.1088/1361-6528/ae2a3f
Virginijus Bukauskas, Viktorija Strazdienė, Tomas Daugalas, Audružis Mironas, Vladimir Astachov, Graham J Hickman, Dominic Eberl-Craske, Sandra Stanionytė, Vidas Pakštas, Martynas Talaikis, Arūnas Šetkus
Tellurium (Te) has recently gained attention due to its unique one-dimensional helical chain crystal structure and promising optoelectronic and thermoelectric properties. In this study, we investigate the influence of substrate temperature (296 K-326 K) on the structural and electrical characteristics of ∼20 nm Te films deposited via vacuum thermal evaporation on Si/SiO₂substrates. Morphological analysis using atomic force microscopy and high-resolution transmission electron microscopy revealed correlation between the substrate temperature and the changes in the structure from trapezoidal to elongated stick-like features. X-ray diffraction and Raman spectroscopy demonstrated that the Te chains were predominantly oriented parallel to the substrate surface atTS= 326 K. The chain length and packing density were dependent onTS. Spatially resolved current-voltage measurements show a strong temperature-dependent decrease of the in-plane charge transport, whereas higher-temperature films were characterized by an increased lateral resistance. Scanning Kelvin probe microscopy measurements further reveal surface potential differences of ∼0.6 V between samples. These results demonstrate that small variations in substrate temperature can significantly modulate nanoscale morphology and electrical transport, providing a route to engineer Te-based thin-film devices with tailored performance.
{"title":"Dependence of structure and electrical properties on growth temperature in PVD tellurium nano-thin films.","authors":"Virginijus Bukauskas, Viktorija Strazdienė, Tomas Daugalas, Audružis Mironas, Vladimir Astachov, Graham J Hickman, Dominic Eberl-Craske, Sandra Stanionytė, Vidas Pakštas, Martynas Talaikis, Arūnas Šetkus","doi":"10.1088/1361-6528/ae2a3f","DOIUrl":"10.1088/1361-6528/ae2a3f","url":null,"abstract":"<p><p>Tellurium (Te) has recently gained attention due to its unique one-dimensional helical chain crystal structure and promising optoelectronic and thermoelectric properties. In this study, we investigate the influence of substrate temperature (296 K-326 K) on the structural and electrical characteristics of ∼20 nm Te films deposited via vacuum thermal evaporation on Si/SiO<sub>₂</sub>substrates. Morphological analysis using atomic force microscopy and high-resolution transmission electron microscopy revealed correlation between the substrate temperature and the changes in the structure from trapezoidal to elongated stick-like features. X-ray diffraction and Raman spectroscopy demonstrated that the Te chains were predominantly oriented parallel to the substrate surface at<i>T</i><sub>S</sub>= 326 K. The chain length and packing density were dependent on<i>T</i><sub>S</sub>. Spatially resolved current-voltage measurements show a strong temperature-dependent decrease of the in-plane charge transport, whereas higher-temperature films were characterized by an increased lateral resistance. Scanning Kelvin probe microscopy measurements further reveal surface potential differences of ∼0.6 V between samples. These results demonstrate that small variations in substrate temperature can significantly modulate nanoscale morphology and electrical transport, providing a route to engineer Te-based thin-film devices with tailored performance.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145714486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-30DOI: 10.1088/1361-6528/ae2c05
Jiyoung Bang, Seungmin Choi, Yeonsu Lee, Yeonghun Lee, Hyowon Kim, Hyeonjeong Sun, Seungjae Lee, Yeoeun Yun, Kyubin Hwang, Taeyang Kim, Eunsuk Choi, Onejae Sul, Seung-Beck Lee
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are promising for nanoscale logic and memory devices, including vertical-channel and monolithic 3D DRAM, owing to their high mobility, uniformity, and compatibility with low-temperature processing. However, nanolithographic definition of a-IGZO channels remains difficult because of their sensitivity to plasma damage and the poor volatility of In, Ga, and Zn etch by-products. Here, we present a scalable self-aligned fabrication strategy that exploits the shadowing effect of angled deposition to realize nanoscale devices without utilizing nanolithography. Using this method, we examined top-gate-top-contact device (TGTC), the widely adopted baseline that suffers from plasma-induced damage and top-gate-bottom-contact device (TGBC), which mitigate channel plasma exposure but undergo severe contact oxidation during post-deposition annealing. To overcome these limitations, we developed a nanoscale vertical TFT architecture in which obliquely deposited Ni/Au electrodes directly form self-aligned source/drain contacts without hard masks or dry etching. The resulting devices had a channel length of 55 nm, achieved an on-current of 2.6 × 10-6Aµm-1at a drain bias (VD) of 40 mV, approximately four times higher than the TGTC and forty times higher than the TGBC which both had similar channel dimensions. AtVD= 400 mV, a lateral field of 667 kV cm-1, the on-current further increased to 1.6 × 10-5Aµm-1with the off-state current remaining in the 10-13Aµm-1range, giving an on/off ratio of 108. These results demonstrate that angled deposition provides both a nanolithography-free route to nanoscale patterning and a device architecture for integrating a-IGZO transistors into future nanoscale logic and memory technologies.
非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFTs)由于其高迁移率、均匀性和与低温加工的兼容性,在纳米级逻辑和存储器件(包括垂直通道和单片3D DRAM)中很有前景。然而,a-IGZO通道的纳米光刻定义仍然很困难,因为它们对等离子体损伤很敏感,而且In, Ga和Zn蚀刻副产物的挥发性很差。在这里,我们提出了一种可扩展的自对准制造策略,利用角度沉积的阴影效应来实现纳米级器件,而无需使用纳米光刻。使用这种方法,我们研究了顶门-顶接触装置(TGTC)和顶门-底接触装置(TGBC),前者是广泛采用的遭受等离子体诱导损伤的基线,后者减轻了通道等离子体暴露,但在沉积后退火(PDA)过程中会发生严重的接触氧化。为了克服这些限制,我们开发了一种纳米级垂直TFT结构,其中倾斜沉积的Ni/Au电极直接形成自对准的源/漏触点,而无需硬掩膜或干蚀刻。所得到的器件具有55 nm的通道长度,在40 mV的漏极偏置(VD)下实现了2.6×10^-6 a /µm的导通电流,比具有相似通道尺寸的TGTC高约4倍,比TGBC高40倍。在VD = 400 mV时,横向电场为667 kV/cm,导通电流进一步增加到1.6×10^-5 a /µm,导通电流保持在10^-13 a /µm范围内,导通比为108。这些结果表明,角度沉积既提供了一种无需纳米光刻的纳米级图像化途径,也为将a- igzo晶体管集成到未来的纳米级逻辑和存储技术提供了一种器件架构。
{"title":"Scalable self-aligned fabrication of nanoscale vertical a-IGZO TFTs utilizing angled deposition.","authors":"Jiyoung Bang, Seungmin Choi, Yeonsu Lee, Yeonghun Lee, Hyowon Kim, Hyeonjeong Sun, Seungjae Lee, Yeoeun Yun, Kyubin Hwang, Taeyang Kim, Eunsuk Choi, Onejae Sul, Seung-Beck Lee","doi":"10.1088/1361-6528/ae2c05","DOIUrl":"10.1088/1361-6528/ae2c05","url":null,"abstract":"<p><p>Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are promising for nanoscale logic and memory devices, including vertical-channel and monolithic 3D DRAM, owing to their high mobility, uniformity, and compatibility with low-temperature processing. However, nanolithographic definition of a-IGZO channels remains difficult because of their sensitivity to plasma damage and the poor volatility of In, Ga, and Zn etch by-products. Here, we present a scalable self-aligned fabrication strategy that exploits the shadowing effect of angled deposition to realize nanoscale devices without utilizing nanolithography. Using this method, we examined top-gate-top-contact device (TGTC), the widely adopted baseline that suffers from plasma-induced damage and top-gate-bottom-contact device (TGBC), which mitigate channel plasma exposure but undergo severe contact oxidation during post-deposition annealing. To overcome these limitations, we developed a nanoscale vertical TFT architecture in which obliquely deposited Ni/Au electrodes directly form self-aligned source/drain contacts without hard masks or dry etching. The resulting devices had a channel length of 55 nm, achieved an on-current of 2.6 × 10<sup>-6</sup>A<i>µ</i>m<sup>-1</sup>at a drain bias (<i>V</i><sub>D</sub>) of 40 mV, approximately four times higher than the TGTC and forty times higher than the TGBC which both had similar channel dimensions. At<i>V</i><sub>D</sub>= 400 mV, a lateral field of 667 kV cm<sup>-1</sup>, the on-current further increased to 1.6 × 10<sup>-5</sup>A<i>µ</i>m<sup>-1</sup>with the off-state current remaining in the 10<sup>-13</sup>A<i>µ</i>m<sup>-1</sup>range, giving an on/off ratio of 10<sup>8</sup>. These results demonstrate that angled deposition provides both a nanolithography-free route to nanoscale patterning and a device architecture for integrating a-IGZO transistors into future nanoscale logic and memory technologies.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145743409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-30DOI: 10.1088/1361-6528/ae2c91
Pengfei Su, Keyi Wan, Jiajun Li, Qiuyang Dai, Shijiao Sun, Rongfei Jiang, Jijun Tang, Long Lin, Jiaoxia Zhang
Environmental issues have emerged as a pivotal challenge in the realm of industrial development, rendering the prioritization of renewable energy and sustainable development imperative. Photocatalytic materials should align with these goals by being recyclable and reusable. In this work, spherical nano-Bi₂₄Fe₂O₃₉ was synthesized via a sol-gel method combined with calcination and loaded onto In₂S₃ to construct an S-scheme In₂S₃/Bi₂₄Fe₂O₃₉ heterojunction with superior photocatalytic degradation performance. The composite exhibited an extended light absorption range from 585 nm to 650 nm (IB-30), a narrowed apparent bandgap compared to pure In₂S₃, and significantly improved carrier separation and transfer efficiency. Under the optimal conditions of pH = 7, catalyst dosage = 10 mg, and tetracycline (TC) concentration = 10 mg l-1, the IB-30 material achieved a removal rate of 85.8% for tetracycline, which is 1.7 times and 2.46 times higher than that of pure In₂S₃ and pure Bi₂₄Fe₂O₃₉, respectively. Driven by the built-in electric field, photogenerated electrons follow an S-scheme pathway for transfer, while・O₂-(superoxide anion radicals) and h+(holes) serve as the primary active species, effectively facilitating the photocatalytic degradation reaction. This study provides new insights into developing efficient and stable visible-light-driven photocatalysts.
{"title":"Synergistic adsorption-photocatalysis of In₂S₃/Bi₂₄Fe₂O₃₉ based on oxygen vacancy for efficient tetracycline removal.","authors":"Pengfei Su, Keyi Wan, Jiajun Li, Qiuyang Dai, Shijiao Sun, Rongfei Jiang, Jijun Tang, Long Lin, Jiaoxia Zhang","doi":"10.1088/1361-6528/ae2c91","DOIUrl":"10.1088/1361-6528/ae2c91","url":null,"abstract":"<p><p>Environmental issues have emerged as a pivotal challenge in the realm of industrial development, rendering the prioritization of renewable energy and sustainable development imperative. Photocatalytic materials should align with these goals by being recyclable and reusable. In this work, spherical nano-Bi₂₄Fe₂O₃₉ was synthesized via a sol-gel method combined with calcination and loaded onto In₂S₃ to construct an S-scheme In₂S₃/Bi₂₄Fe₂O₃₉ heterojunction with superior photocatalytic degradation performance. The composite exhibited an extended light absorption range from 585 nm to 650 nm (IB-30), a narrowed apparent bandgap compared to pure In₂S₃, and significantly improved carrier separation and transfer efficiency. Under the optimal conditions of pH = 7, catalyst dosage = 10 mg, and tetracycline (TC) concentration = 10 mg l<sup>-1</sup>, the IB-30 material achieved a removal rate of 85.8% for tetracycline, which is 1.7 times and 2.46 times higher than that of pure In₂S₃ and pure Bi₂₄Fe₂O₃₉, respectively. Driven by the built-in electric field, photogenerated electrons follow an S-scheme pathway for transfer, while・O₂<sup>-</sup>(superoxide anion radicals) and h<sup>+</sup>(holes) serve as the primary active species, effectively facilitating the photocatalytic degradation reaction. This study provides new insights into developing efficient and stable visible-light-driven photocatalysts.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145763295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-30DOI: 10.1088/1361-6528/ae2e04
Xiao-Fei Yu, Bin Liu, Bin He, Zi-Xin Lin, Juan Xu, Jianyu Cao
Lithium sulfur batteries (LSBs) are regarded as the potential next-generation energy storage system due to their high theoretical energy density and low cost. However, LSBs also face problems such as the dissolution of lithium polysulfide, volume expansion, and the formation of lithium dendrites. Optimizing the design of sulfur cathode materials to tackle these issues at their source is the primary approach to enhancing the performance of LSBs, since the inherent limitations of sulfur are the root cause of the challenges in LSBs. The review covers the latest research on carbon-based sulfur cathode materials of LSBs, including structural design and functional optimization strategies, aiming to prepare multifunctional carbon-based sulfur cathodes by integrating physical confinement, chemical adsorption, and catalytic effect towards lithium polysulfides. The future development directions are prospected, including material design, optimization of reaction mechanisms, and low-cost preparation technologies.
{"title":"Revolutionizing lithium sulfur batteries: advanced nanocarbon scaffolds for superior sulfur cathodes.","authors":"Xiao-Fei Yu, Bin Liu, Bin He, Zi-Xin Lin, Juan Xu, Jianyu Cao","doi":"10.1088/1361-6528/ae2e04","DOIUrl":"10.1088/1361-6528/ae2e04","url":null,"abstract":"<p><p>Lithium sulfur batteries (LSBs) are regarded as the potential next-generation energy storage system due to their high theoretical energy density and low cost. However, LSBs also face problems such as the dissolution of lithium polysulfide, volume expansion, and the formation of lithium dendrites. Optimizing the design of sulfur cathode materials to tackle these issues at their source is the primary approach to enhancing the performance of LSBs, since the inherent limitations of sulfur are the root cause of the challenges in LSBs. The review covers the latest research on carbon-based sulfur cathode materials of LSBs, including structural design and functional optimization strategies, aiming to prepare multifunctional carbon-based sulfur cathodes by integrating physical confinement, chemical adsorption, and catalytic effect towards lithium polysulfides. The future development directions are prospected, including material design, optimization of reaction mechanisms, and low-cost preparation technologies.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145775091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-30DOI: 10.1088/1361-6528/ae2e02
Md Aziz Ar Rahman, Md Abdullah Mamun, Shukui Zhang, Hani E Elsayed-Ali
This study investigates the quantum efficiency (QE) and operational lifetime of a negative electron affinity GaAs truncated nanocone array (TNCA) photocathode benchmarked against a conventional flat GaAs photocathode under varying activation temperatures. The TNCA structure demonstrated a QE of up to 13.6% at 590 nm with room temperature (RT) activation-approximately 1.5 times higher than its flat counterpart. This enhancement is due to Mie resonance effects within the nanostructure, as confirmed by finite-difference time-domain simulations. Moreover, the TNCA photocathode exhibits significantly extended charge lifetime, with enhancement factors of ∼6.1 and ∼19.8 under RT and 50 °C activations, respectively. These gains are primarily attributed to increased effective surface area and optimized dipole layer formation at elevated temperatures. In addition, shorter excitation wavelengths further contribute to lifetime improvements. These findings underscore the TNCA GaAs photocathode's potential as a high QE, long lifetime electron source for many large-scale electron accelerators.
{"title":"Effect of activation temperature on quantum efficiency and lifetime of NEA truncated nanocone array GaAs photocathode.","authors":"Md Aziz Ar Rahman, Md Abdullah Mamun, Shukui Zhang, Hani E Elsayed-Ali","doi":"10.1088/1361-6528/ae2e02","DOIUrl":"10.1088/1361-6528/ae2e02","url":null,"abstract":"<p><p>This study investigates the quantum efficiency (QE) and operational lifetime of a negative electron affinity GaAs truncated nanocone array (TNCA) photocathode benchmarked against a conventional flat GaAs photocathode under varying activation temperatures. The TNCA structure demonstrated a QE of up to 13.6% at 590 nm with room temperature (RT) activation-approximately 1.5 times higher than its flat counterpart. This enhancement is due to Mie resonance effects within the nanostructure, as confirmed by finite-difference time-domain simulations. Moreover, the TNCA photocathode exhibits significantly extended charge lifetime, with enhancement factors of ∼6.1 and ∼19.8 under RT and 50 °C activations, respectively. These gains are primarily attributed to increased effective surface area and optimized dipole layer formation at elevated temperatures. In addition, shorter excitation wavelengths further contribute to lifetime improvements. These findings underscore the TNCA GaAs photocathode's potential as a high QE, long lifetime electron source for many large-scale electron accelerators.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145775078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-29DOI: 10.1088/1361-6528/ae2921
J Serafińczuk, P Ciechanowicz, S Gorantla, L Pawlaczyk, R Kudrawiec, D Hommel
In this paper, we present results of x-ray diffraction investigations of GaN micro-pillars grown on GaN template. These rods are special in so far that they have stable a- and m-plane side walls and dodecagonal and not hexagonal shape as usual. Such growth mode is simulated by adding As as surfactant. The work shows the influence of changing the amount of gallium and arsenic and lowering the temperature on the growth of micro-pillars. Changing the growth parameters led to both a change in the density of the growing micro-pillars, their height and width, and their structural parameters, such as a disturbance in the direction of growth of the structures. In order to characterize the studied samples, measurements were carried on the configuration from the surface and from the edge of the sample. This measurements method allowed to visualize the structure in the perpendicular and parallel directions of the micro-pillars growth. In addition, the strain and mosaic analysis showed correlations between the resulting shape and density of the rods and the strain of the GaN-pillar and GaNAs crystalline lattice.
{"title":"Influence of grown conditions on dodecagonal GaN micro-pillars structural parameters investigated by XRD.","authors":"J Serafińczuk, P Ciechanowicz, S Gorantla, L Pawlaczyk, R Kudrawiec, D Hommel","doi":"10.1088/1361-6528/ae2921","DOIUrl":"10.1088/1361-6528/ae2921","url":null,"abstract":"<p><p>In this paper, we present results of x-ray diffraction investigations of GaN micro-pillars grown on GaN template. These rods are special in so far that they have stable a- and m-plane side walls and dodecagonal and not hexagonal shape as usual. Such growth mode is simulated by adding As as surfactant. The work shows the influence of changing the amount of gallium and arsenic and lowering the temperature on the growth of micro-pillars. Changing the growth parameters led to both a change in the density of the growing micro-pillars, their height and width, and their structural parameters, such as a disturbance in the direction of growth of the structures. In order to characterize the studied samples, measurements were carried on the configuration from the surface and from the edge of the sample. This measurements method allowed to visualize the structure in the perpendicular and parallel directions of the micro-pillars growth. In addition, the strain and mosaic analysis showed correlations between the resulting shape and density of the rods and the strain of the GaN-pillar and GaNAs crystalline lattice.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145708726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper investigates the influence of different abrasive morphology of silicon carbide (SiC) through molecular dynamics simulations on the scratching process, aiming to provide theoretical guidance and process optimization directions for the precision machining of SiC materials. The paper analyzes the differences in contact area, stress distribution, and material deformation mechanisms between sphere, cone, frustum cone, face of a square pyramid and edge of a square pyramid abrasives during the scratching process. It focuses on key characteristics such as scratching force, atom removal, surface topography, amorphous deformation, and subsurface stress distribution. The results show that the morphology of the abrasive significantly affects machining efficiency and surface quality, with sphere abrasives being more prone to plastic deformation and pyramid abrasives tending to cause brittle fracture. Additionally, the interaction between abrasive morphology and SiC crystal orientation also has a significant impact on the scratching process. This paper not only reveals the surface formation mechanisms of SiC under different abrasive morphology but also provides important theoretical and experimental basis for achieving more efficient and precise SiC material machining.
{"title":"Effect of abrasive morphology on material removal mechanism and surface integrity in SiC precision grinding via molecular dynamics simulations.","authors":"Xiaoye Wang, Jinghao Yang, Zige Tian, Shuhao Ye, Bokai Li, Zelin Lei, Lingzhi Guo, Jianmin Jiang, Jianbin Jiang","doi":"10.1088/1361-6528/ae2c90","DOIUrl":"10.1088/1361-6528/ae2c90","url":null,"abstract":"<p><p>This paper investigates the influence of different abrasive morphology of silicon carbide (SiC) through molecular dynamics simulations on the scratching process, aiming to provide theoretical guidance and process optimization directions for the precision machining of SiC materials. The paper analyzes the differences in contact area, stress distribution, and material deformation mechanisms between sphere, cone, frustum cone, face of a square pyramid and edge of a square pyramid abrasives during the scratching process. It focuses on key characteristics such as scratching force, atom removal, surface topography, amorphous deformation, and subsurface stress distribution. The results show that the morphology of the abrasive significantly affects machining efficiency and surface quality, with sphere abrasives being more prone to plastic deformation and pyramid abrasives tending to cause brittle fracture. Additionally, the interaction between abrasive morphology and SiC crystal orientation also has a significant impact on the scratching process. This paper not only reveals the surface formation mechanisms of SiC under different abrasive morphology but also provides important theoretical and experimental basis for achieving more efficient and precise SiC material machining.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145763290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}