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Development of ZnO nanorods/Si heterojunction photodetectors for high responsivity across a wide spectral range via plasmonic Ag nanoparticles. 利用等离子体银纳米粒子制备高光谱响应的ZnO纳米棒/Si异质结光电探测器。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-02 DOI: 10.1088/1361-6528/ae300b
Somaye Hosseingholi, Pantea Aurang

ZnO, anintrinsic n-typesemiconductor, has attracted considerable attention in optoelectronics. However, its application in broadband photoresponsivity is limited by its wide band gap. In this study, polyol-synthesized silver nanoparticles (Ag NPs) with controlled size were used to enhance the performance of n-type ZnO nanorods (NRs) and p-type Si heterojunction (ZnO NRs/Si) photodetectors (PDs). Photoluminescence spectra confirmed that the broadband emissions of the ZnO NRs, originating from crystal defects, efficiently overlapped with the localized surface plasmon resonance of the Ag NPs. Under illumination and a reverse bias voltage of 4.0 V, the photocurrent (Iph) of the detectors increased from 2.2 × 10-5-2.39 × 10-4after Ag NP decoration of the ZnO NRs. TheIph/Idarkratio of the pristine ZnO NRs/Si device was determined to be 5.5, which increased to 100 in the presence of the Ag NPs. The plasmonic-enhanced PD (Ag-decorated ZnO NRs/Si) exhibited broader and stronger spectral photoresponsivity from the UV-Vis to the NIR range. Responsivity and detectivity values of 0.39 A W-1and 2 × 10-11cm.Hz1/2W-1at 372 nm, and 0.42 A W-1and 4.2 × 10-11cm.Hz1/2W-1at 420 nm, were observed for this device. Overall, plasmon-enhanced ZnO NRs/Si PDs demonstrated enhanced broadband UV-Vis-NIR spectral response with high photocurrent values.

ZnO是一种本征n型半导体,在光电子学领域引起了广泛的关注。然而,它在宽带光响应中的应用受到其宽带隙的限制。在本研究中,利用多元醇合成的银纳米颗粒(Ag NPs)来控制尺寸,以提高n型ZnO纳米棒(NRs)和p型Si异质结(ZnO NRs/Si)光电探测器的性能。光致发光(PL)光谱证实,ZnO纳米粒子的宽带发射源于晶体缺陷,与Ag纳米粒子的局部表面等离子体共振(LSPR)有效重叠。在4.0 V的反向偏置电压和光照条件下,对ZnO NRs进行Ag NP修饰后,探测器的光电流(Iph)由2.2 × 10-5增加到2.39 × 10-4。原始ZnO NRs/Si器件的Iph/Idark比为5.5,在Ag NPs的存在下,Iph/Idark比增加到100。等离子体增强光电探测器(ag修饰ZnO NRs/Si)在紫外可见到近红外光谱范围内表现出更宽、更强的光谱光响应性。响应度和检出率值为0.39 A/W和2 × 1011 cm。Hz1/2/W在372 nm, 0.42 A/W和4.2 × 1011 cm。在420 nm处观察到Hz1/2/W。总的来说,等离子体增强的ZnO NRs/Si光电探测器在高光电值下表现出增强的宽带UV-Vis-NIR光谱响应。 。
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引用次数: 0
The phase transformation from MOF to hierarchical catalysts and their non-enzymatic glucose sensing performance. 从MOF到分级催化剂的相变及其非酶葡萄糖传感性能。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2026-01-02 DOI: 10.1088/1361-6528/ae2ae4
Yiquan Zeng, Qingduo Liu, Enxi Huang, Meiyu Yang, Yanbo Wang, Shupei Sun, Ping Sun

Herein, Co-MOF arrays were used as a precursor to fabricate hierarchical catalysts. Heterostructure Co-MOF/Co(OH)2and Co(OH)2micro-nano sheet arrays were fabricated by etching treatment in ultrapure water for different time. When treated for 60 min, infrared spectrum and x-ray diffraction (XRD) pattern indicate that there is the co-existence of Co-MOF and Co(OH)2. After etching for 120 min, the scanning electron microscopy image reveals three-dimensional hierarchical micro-nano sheet arrays, the energy dispersive x-ray spectrum and XRD analysis indicate pure Co(OH)2phase with high crystallinity. Their glucose sensing performance is systematically explored by cyclic voltammetric and amperometrici-tcurves. The linear ranges of Co-MOF/Co(OH)2and Co(OH)2micro-nano sheet arrays are 0.05-2.2 mM (R2= 0.999) and 0.05-5.8 mM (R2= 0.999), their corresponding sensitivities are 1040μA mM-1cm-2and 884μA mM-1cm-2, respectively. Good glucose sensing performance of Co(OH)2micro-nano sheet arrays is attributed to its unique three-dimensional array structure which guarantees the sufficient diffusion of electrolyte and effective contact between glucose molecule and active sites. Further, the obtained hierarchical Co(OH)2electrode possesses good selectivity, stability, repeatability and practical detection ability.

本文采用Co-MOF阵列作为前驱体制备了分级催化剂。在超纯水中蚀刻不同时间制备了异质结构Co- mof /Co(OH)2和Co(OH)2微纳片阵列。处理60 min时,红外光谱和x射线衍射(XRD)图表明Co- mof和Co(OH)2共存。刻蚀120 min后,扫描电镜(SEM)图像显示三维分层微纳片阵列,x射线能谱(EDS)和x射线衍射(XRD)分析显示纯Co(OH)2相,结晶度高。通过循环伏安和安培i-t曲线系统地探索了它们的葡萄糖传感性能。Co- mof /Co(OH)2和Co(OH)2微纳片阵列的线性范围分别为0.05~2.2 mM (R2=0.999)和0.05~5.8 mM (R2=0.999),对应的灵敏度分别为1040 μA mM-1 cm-2和884 μA mM-1 cm-2。Co(OH)2微纳片阵列具有良好的葡萄糖传感性能,其独特的三维阵列结构保证了电解质的充分扩散和葡萄糖分子与活性位点的有效接触。此外,所制备的分层Co(OH)2电极具有良好的选择性、稳定性、重复性和实用的检测能力。
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引用次数: 0
Frequency-controlled magnetic release of gold-melittin conjugates from TiOnanocylinders for dual antimicrobial and cancer therapy. 频率控制磁释放用于双重抗菌和癌症治疗的二氧化钛纳米圆筒中的金-蜂毒素偶联物。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-30 DOI: 10.1088/1361-6528/ae2d5d
Aekachai Phuttakhaw, Suttinart Noothongkaew, Kanchiyaphat Ariyachaokun, Warachin Gangnonngiw, Wilawan Thongda, Thatchaphon Phongsaphatcharamon

This study presents the development of a frequency-controlled drug delivery platform employing gold (Au)-melittin (Mel) conjugates loaded onto titanium dioxide nanocylinders (TiONCs) decorated with magnetic (M) nanoparticles (NPs). TiONCs were synthesized via a multi-step anodization and sonication process, providing a high surface-area scaffold for drug loading, while MNPs enabled magnetically-responsive behavior. AuNPs were functionalized with Mel, a potent antimicrobial and anticancer peptide, to enhance its stability and minimize cytotoxicity. The resulting Au-Mel-loaded MNP-TiONCs exhibited controlled drug release in response to alternating magnetic fields, with peak release occurring within 10 min under stimulation frequencies ranging from 10 Hz to 10 000 Hz. FTIR, TEM, EDX, and zeta potential analyses confirmed successful conjugation and integration of all components.In vitroantibacterial assays demonstrated effective inhibition ofE. coliby magnetically released Au-Mel, while cytotoxicity tests indicated selective activity against HepG2 liver cancer cells with minimal impact on HEK293 cells. This nanoplatform offers a promising solution for dual antibacterial and anticancer therapy with spatiotemporal control via external magnetic fields.

本研究提出了一种频率控制的药物递送平台的开发,该平台将金(Au)melittin (Mel)偶联物负载在二氧化钛纳米柱(TiO₂NCs)上,并用磁性(M)纳米颗粒(NPs)修饰。通过多步阳极氧化和超声工艺合成了二氧化钛纳米管,为药物负载提供了高表面积的支架,而MNPs则具有磁响应行为。Au NPs被Mel功能化,Mel是一种有效的抗菌和抗癌肽,以提高其稳定性和降低细胞毒性。所得到的负载au - mel的MNP-TiO₂NCs在交变磁场(AMFs)下表现出可控的药物释放,在10 Hz至10,000 Hz的刺激频率下,在10分钟内达到峰值释放。FTIR, TEM, EDX和zeta电位分析证实了所有组分的成功结合和集成。体外抗菌实验表明,磁释放的Au-Mel对大肠杆菌有有效的抑制作用,而细胞毒性实验表明,对HepG2肝癌细胞有选择性活性,对HEK293细胞的影响最小。该纳米平台为通过外部磁场进行时空控制的双重抗菌和抗癌治疗提供了一个有前景的解决方案。
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引用次数: 0
Dependence of structure and electrical properties on growth temperature in PVD tellurium nano-thin films. PVD碲纳米薄膜结构和电性能对生长温度的依赖性。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-30 DOI: 10.1088/1361-6528/ae2a3f
Virginijus Bukauskas, Viktorija Strazdienė, Tomas Daugalas, Audružis Mironas, Vladimir Astachov, Graham J Hickman, Dominic Eberl-Craske, Sandra Stanionytė, Vidas Pakštas, Martynas Talaikis, Arūnas Šetkus

Tellurium (Te) has recently gained attention due to its unique one-dimensional helical chain crystal structure and promising optoelectronic and thermoelectric properties. In this study, we investigate the influence of substrate temperature (296 K-326 K) on the structural and electrical characteristics of ∼20 nm Te films deposited via vacuum thermal evaporation on Si/SiOsubstrates. Morphological analysis using atomic force microscopy and high-resolution transmission electron microscopy revealed correlation between the substrate temperature and the changes in the structure from trapezoidal to elongated stick-like features. X-ray diffraction and Raman spectroscopy demonstrated that the Te chains were predominantly oriented parallel to the substrate surface atTS= 326 K. The chain length and packing density were dependent onTS. Spatially resolved current-voltage measurements show a strong temperature-dependent decrease of the in-plane charge transport, whereas higher-temperature films were characterized by an increased lateral resistance. Scanning Kelvin probe microscopy measurements further reveal surface potential differences of ∼0.6 V between samples. These results demonstrate that small variations in substrate temperature can significantly modulate nanoscale morphology and electrical transport, providing a route to engineer Te-based thin-film devices with tailored performance.

碲(Te)由于其独特的一维螺旋链晶体结构和具有良好的光电和热电性能,近年来备受关注。在这项研究中,我们研究了衬底温度(296 K-326 K)对真空热蒸发沉积在Si/SiO₂衬底上的~20 nm Te薄膜结构和电学特性的影响。利用原子力显微镜(AFM)和高分辨率透射电子显微镜(HRTEM)进行形貌分析,揭示了衬底温度与结构从梯形到细长棒状的变化之间的相关性。x射线衍射和拉曼光谱表明,在TS = 326 K时,Te链主要平行于衬底表面取向。链长和填充密度依赖于TS。空间分辨的电流-电压测量显示,平面内电荷输运的减少与温度有很强的相关性,而高温薄膜的特征是横向电阻的增加。扫描开尔文探针显微镜测量进一步揭示了样品之间的表面电位差~0.6 V。这些结果表明,衬底温度的微小变化可以显著调节纳米尺度的形貌和电输运,为设计具有定制性能的te基薄膜器件提供了一条途径。
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引用次数: 0
Scalable self-aligned fabrication of nanoscale vertical a-IGZO TFTs utilizing angled deposition. 利用角度沉积的可扩展自对准纳米级垂直a-IGZO tft。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-30 DOI: 10.1088/1361-6528/ae2c05
Jiyoung Bang, Seungmin Choi, Yeonsu Lee, Yeonghun Lee, Hyowon Kim, Hyeonjeong Sun, Seungjae Lee, Yeoeun Yun, Kyubin Hwang, Taeyang Kim, Eunsuk Choi, Onejae Sul, Seung-Beck Lee

Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are promising for nanoscale logic and memory devices, including vertical-channel and monolithic 3D DRAM, owing to their high mobility, uniformity, and compatibility with low-temperature processing. However, nanolithographic definition of a-IGZO channels remains difficult because of their sensitivity to plasma damage and the poor volatility of In, Ga, and Zn etch by-products. Here, we present a scalable self-aligned fabrication strategy that exploits the shadowing effect of angled deposition to realize nanoscale devices without utilizing nanolithography. Using this method, we examined top-gate-top-contact device (TGTC), the widely adopted baseline that suffers from plasma-induced damage and top-gate-bottom-contact device (TGBC), which mitigate channel plasma exposure but undergo severe contact oxidation during post-deposition annealing. To overcome these limitations, we developed a nanoscale vertical TFT architecture in which obliquely deposited Ni/Au electrodes directly form self-aligned source/drain contacts without hard masks or dry etching. The resulting devices had a channel length of 55 nm, achieved an on-current of 2.6 × 10-6Aµm-1at a drain bias (VD) of 40 mV, approximately four times higher than the TGTC and forty times higher than the TGBC which both had similar channel dimensions. AtVD= 400 mV, a lateral field of 667 kV cm-1, the on-current further increased to 1.6 × 10-5Aµm-1with the off-state current remaining in the 10-13Aµm-1range, giving an on/off ratio of 108. These results demonstrate that angled deposition provides both a nanolithography-free route to nanoscale patterning and a device architecture for integrating a-IGZO transistors into future nanoscale logic and memory technologies.

非晶铟镓锌氧化物(a-IGZO)薄膜晶体管(TFTs)由于其高迁移率、均匀性和与低温加工的兼容性,在纳米级逻辑和存储器件(包括垂直通道和单片3D DRAM)中很有前景。然而,a-IGZO通道的纳米光刻定义仍然很困难,因为它们对等离子体损伤很敏感,而且In, Ga和Zn蚀刻副产物的挥发性很差。在这里,我们提出了一种可扩展的自对准制造策略,利用角度沉积的阴影效应来实现纳米级器件,而无需使用纳米光刻。使用这种方法,我们研究了顶门-顶接触装置(TGTC)和顶门-底接触装置(TGBC),前者是广泛采用的遭受等离子体诱导损伤的基线,后者减轻了通道等离子体暴露,但在沉积后退火(PDA)过程中会发生严重的接触氧化。为了克服这些限制,我们开发了一种纳米级垂直TFT结构,其中倾斜沉积的Ni/Au电极直接形成自对准的源/漏触点,而无需硬掩膜或干蚀刻。所得到的器件具有55 nm的通道长度,在40 mV的漏极偏置(VD)下实现了2.6×10^-6 a /µm的导通电流,比具有相似通道尺寸的TGTC高约4倍,比TGBC高40倍。在VD = 400 mV时,横向电场为667 kV/cm,导通电流进一步增加到1.6×10^-5 a /µm,导通电流保持在10^-13 a /µm范围内,导通比为108。这些结果表明,角度沉积既提供了一种无需纳米光刻的纳米级图像化途径,也为将a- igzo晶体管集成到未来的纳米级逻辑和存储技术提供了一种器件架构。
{"title":"Scalable self-aligned fabrication of nanoscale vertical a-IGZO TFTs utilizing angled deposition.","authors":"Jiyoung Bang, Seungmin Choi, Yeonsu Lee, Yeonghun Lee, Hyowon Kim, Hyeonjeong Sun, Seungjae Lee, Yeoeun Yun, Kyubin Hwang, Taeyang Kim, Eunsuk Choi, Onejae Sul, Seung-Beck Lee","doi":"10.1088/1361-6528/ae2c05","DOIUrl":"10.1088/1361-6528/ae2c05","url":null,"abstract":"<p><p>Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) are promising for nanoscale logic and memory devices, including vertical-channel and monolithic 3D DRAM, owing to their high mobility, uniformity, and compatibility with low-temperature processing. However, nanolithographic definition of a-IGZO channels remains difficult because of their sensitivity to plasma damage and the poor volatility of In, Ga, and Zn etch by-products. Here, we present a scalable self-aligned fabrication strategy that exploits the shadowing effect of angled deposition to realize nanoscale devices without utilizing nanolithography. Using this method, we examined top-gate-top-contact device (TGTC), the widely adopted baseline that suffers from plasma-induced damage and top-gate-bottom-contact device (TGBC), which mitigate channel plasma exposure but undergo severe contact oxidation during post-deposition annealing. To overcome these limitations, we developed a nanoscale vertical TFT architecture in which obliquely deposited Ni/Au electrodes directly form self-aligned source/drain contacts without hard masks or dry etching. The resulting devices had a channel length of 55 nm, achieved an on-current of 2.6 × 10<sup>-6</sup>A<i>µ</i>m<sup>-1</sup>at a drain bias (<i>V</i><sub>D</sub>) of 40 mV, approximately four times higher than the TGTC and forty times higher than the TGBC which both had similar channel dimensions. At<i>V</i><sub>D</sub>= 400 mV, a lateral field of 667 kV cm<sup>-1</sup>, the on-current further increased to 1.6 × 10<sup>-5</sup>A<i>µ</i>m<sup>-1</sup>with the off-state current remaining in the 10<sup>-13</sup>A<i>µ</i>m<sup>-1</sup>range, giving an on/off ratio of 10<sup>8</sup>. These results demonstrate that angled deposition provides both a nanolithography-free route to nanoscale patterning and a device architecture for integrating a-IGZO transistors into future nanoscale logic and memory technologies.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145743409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synergistic adsorption-photocatalysis of In₂S₃/Bi₂₄Fe₂O₃₉ based on oxygen vacancy for efficient tetracycline removal. 基于氧空位的In₂S₃/Bi₂₄Fe₂O₃₉的协同吸附-光催化高效脱除四环素
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-30 DOI: 10.1088/1361-6528/ae2c91
Pengfei Su, Keyi Wan, Jiajun Li, Qiuyang Dai, Shijiao Sun, Rongfei Jiang, Jijun Tang, Long Lin, Jiaoxia Zhang

Environmental issues have emerged as a pivotal challenge in the realm of industrial development, rendering the prioritization of renewable energy and sustainable development imperative. Photocatalytic materials should align with these goals by being recyclable and reusable. In this work, spherical nano-Bi₂₄Fe₂O₃₉ was synthesized via a sol-gel method combined with calcination and loaded onto In₂S₃ to construct an S-scheme In₂S₃/Bi₂₄Fe₂O₃₉ heterojunction with superior photocatalytic degradation performance. The composite exhibited an extended light absorption range from 585 nm to 650 nm (IB-30), a narrowed apparent bandgap compared to pure In₂S₃, and significantly improved carrier separation and transfer efficiency. Under the optimal conditions of pH = 7, catalyst dosage = 10 mg, and tetracycline (TC) concentration = 10 mg l-1, the IB-30 material achieved a removal rate of 85.8% for tetracycline, which is 1.7 times and 2.46 times higher than that of pure In₂S₃ and pure Bi₂₄Fe₂O₃₉, respectively. Driven by the built-in electric field, photogenerated electrons follow an S-scheme pathway for transfer, while・O₂-(superoxide anion radicals) and h+(holes) serve as the primary active species, effectively facilitating the photocatalytic degradation reaction. This study provides new insights into developing efficient and stable visible-light-driven photocatalysts.

环境问题已成为工业发展领域的关键挑战,因此必须优先考虑可再生能源和可持续发展。光催化材料应通过可回收和可重复使用来实现这些目标。本文采用溶胶-凝胶法结合煅烧合成了球形纳米Bi₂₄Fe₂O₃₉,并将其加载到In₂S₃上,构建了具有优异光催化降解性能的S-scheme In₂S₃/Bi₂₄Fe₂O₃₉异质结。该复合材料的光吸收范围从585 nm扩展到650 nm (IB-30),并显著提高了载流子分离和转移效率。在pH=7、催化剂用量=10 mg、四环素(TC)浓度=10 mg/L的最佳条件下,IB-30复合材料对四环素的去除率为85.8%,分别是纯In₂S₃和纯Bi₂₄Fe₂O₃₉的1.7倍和2.46倍。在内置电场的驱动下,光生电子遵循S-scheme路径转移,O₂⁻(超氧阴离子自由基)和h⁺(空穴)是主要活性物质,有效促进光催化降解反应。该研究为开发高效、稳定的可见光驱动光催化剂提供了新的思路。
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引用次数: 0
Revolutionizing lithium sulfur batteries: advanced nanocarbon scaffolds for superior sulfur cathodes. 革命性的锂硫电池:先进的纳米碳支架,用于优越的硫阴极。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-30 DOI: 10.1088/1361-6528/ae2e04
Xiao-Fei Yu, Bin Liu, Bin He, Zi-Xin Lin, Juan Xu, Jianyu Cao

Lithium sulfur batteries (LSBs) are regarded as the potential next-generation energy storage system due to their high theoretical energy density and low cost. However, LSBs also face problems such as the dissolution of lithium polysulfide, volume expansion, and the formation of lithium dendrites. Optimizing the design of sulfur cathode materials to tackle these issues at their source is the primary approach to enhancing the performance of LSBs, since the inherent limitations of sulfur are the root cause of the challenges in LSBs. The review covers the latest research on carbon-based sulfur cathode materials of LSBs, including structural design and functional optimization strategies, aiming to prepare multifunctional carbon-based sulfur cathodes by integrating physical confinement, chemical adsorption, and catalytic effect towards lithium polysulfides. The future development directions are prospected, including material design, optimization of reaction mechanisms, and low-cost preparation technologies.

锂硫电池因其理论能量密度高、成本低而被认为是有潜力的下一代储能系统。但LSBs也面临多硫化锂溶解、体积膨胀、锂枝晶形成等问题。优化硫阴极材料的设计,从源头上解决这些问题,是提高硫阴极材料性能的主要方法,因为硫的固有局限性是硫阴极材料面临挑战的根本原因。综述了碳基硫阴极材料在结构设计和功能优化方面的最新研究进展,旨在通过物理约束、化学吸附和对锂多硫化物的催化作用制备多功能碳基硫阴极材料。展望了未来的发展方向,包括材料设计、反应机理优化和低成本制备技术。
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引用次数: 0
Effect of activation temperature on quantum efficiency and lifetime of NEA truncated nanocone array GaAs photocathode. 活化温度对NEA截断纳米锥阵列GaAs光电阴极量子效率和寿命的影响。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-30 DOI: 10.1088/1361-6528/ae2e02
Md Aziz Ar Rahman, Md Abdullah Mamun, Shukui Zhang, Hani E Elsayed-Ali

This study investigates the quantum efficiency (QE) and operational lifetime of a negative electron affinity GaAs truncated nanocone array (TNCA) photocathode benchmarked against a conventional flat GaAs photocathode under varying activation temperatures. The TNCA structure demonstrated a QE of up to 13.6% at 590 nm with room temperature (RT) activation-approximately 1.5 times higher than its flat counterpart. This enhancement is due to Mie resonance effects within the nanostructure, as confirmed by finite-difference time-domain simulations. Moreover, the TNCA photocathode exhibits significantly extended charge lifetime, with enhancement factors of ∼6.1 and ∼19.8 under RT and 50 °C activations, respectively. These gains are primarily attributed to increased effective surface area and optimized dipole layer formation at elevated temperatures. In addition, shorter excitation wavelengths further contribute to lifetime improvements. These findings underscore the TNCA GaAs photocathode's potential as a high QE, long lifetime electron source for many large-scale electron accelerators.

本研究研究了负电子亲和(NEA) GaAs截断纳米锥阵列(TNCA)光电阴极在不同激活温度下的量子效率(QE)和工作寿命,并与传统的扁平GaAs光电阴极进行了对比。TNCA结构在590 nm的室温活化下的QE高达13.6%,大约是其平面结构的1.5倍。这种增强是由于纳米结构内的Mie共振效应,有限差分时域模拟证实了这一点。此外,在室温和50 °C活化下,TNCA光电阴极的充电寿命显著延长,增强因子分别为~6.1和~19.8。这些增益主要归因于在高温下有效表面积的增加和偶极子层形成的优化。此外,较短的激发波长进一步有助于寿命的改善。这些发现强调了TNCA GaAs光电阴极作为许多大型电子加速器的高QE,长寿命电子源的潜力。
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引用次数: 0
Influence of grown conditions on dodecagonal GaN micro-pillars structural parameters investigated by XRD. 用XRD研究了生长条件对十二方GaN微柱结构参数的影响。
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-29 DOI: 10.1088/1361-6528/ae2921
J Serafińczuk, P Ciechanowicz, S Gorantla, L Pawlaczyk, R Kudrawiec, D Hommel

In this paper, we present results of x-ray diffraction investigations of GaN micro-pillars grown on GaN template. These rods are special in so far that they have stable a- and m-plane side walls and dodecagonal and not hexagonal shape as usual. Such growth mode is simulated by adding As as surfactant. The work shows the influence of changing the amount of gallium and arsenic and lowering the temperature on the growth of micro-pillars. Changing the growth parameters led to both a change in the density of the growing micro-pillars, their height and width, and their structural parameters, such as a disturbance in the direction of growth of the structures. In order to characterize the studied samples, measurements were carried on the configuration from the surface and from the edge of the sample. This measurements method allowed to visualize the structure in the perpendicular and parallel directions of the micro-pillars growth. In addition, the strain and mosaic analysis showed correlations between the resulting shape and density of the rods and the strain of the GaN-pillar and GaNAs crystalline lattice.

本文介绍了在GaN模板上生长GaN微柱的XRD研究结果。这些棒的特殊之处在于,它们有稳定的a面和m面侧壁,而且是十二面而不是通常的六边形。通过添加As作为表面活性剂来模拟这种生长模式。研究了改变镓、砷含量和降低温度对微柱生长的影响。改变生长参数会导致生长微柱的密度、高度和宽度以及结构参数(如结构生长方向的扰动)发生变化。 ;为了对所研究的样品进行表征,从表面和边缘对样品进行了形貌测量。这种测量方法可以将微柱生长的垂直和平行方向上的结构可视化。此外,应变和镶嵌分析还显示了棒状结构的形状和密度与gan柱和gan晶格的应变之间的相关性。
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引用次数: 0
Effect of abrasive morphology on material removal mechanism and surface integrity in SiC precision grinding via molecular dynamics simulations. 基于分子动力学模拟的SiC精密磨削中磨料形貌对材料去除机制和表面完整性的影响
IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-12-29 DOI: 10.1088/1361-6528/ae2c90
Xiaoye Wang, Jinghao Yang, Zige Tian, Shuhao Ye, Bokai Li, Zelin Lei, Lingzhi Guo, Jianmin Jiang, Jianbin Jiang

This paper investigates the influence of different abrasive morphology of silicon carbide (SiC) through molecular dynamics simulations on the scratching process, aiming to provide theoretical guidance and process optimization directions for the precision machining of SiC materials. The paper analyzes the differences in contact area, stress distribution, and material deformation mechanisms between sphere, cone, frustum cone, face of a square pyramid and edge of a square pyramid abrasives during the scratching process. It focuses on key characteristics such as scratching force, atom removal, surface topography, amorphous deformation, and subsurface stress distribution. The results show that the morphology of the abrasive significantly affects machining efficiency and surface quality, with sphere abrasives being more prone to plastic deformation and pyramid abrasives tending to cause brittle fracture. Additionally, the interaction between abrasive morphology and SiC crystal orientation also has a significant impact on the scratching process. This paper not only reveals the surface formation mechanisms of SiC under different abrasive morphology but also provides important theoretical and experimental basis for achieving more efficient and precise SiC material machining.

本文通过分子动力学(MD)模拟研究了碳化硅(SiC)不同磨粒形貌对切削过程的影响,旨在为SiC材料的精密加工提供理论指导和工艺优化方向。分析了球、锥、锥锥、方锥面、方锥边磨料在刮擦过程中的接触面积、应力分布和材料变形机理的差异。它侧重于关键特征,如划痕力,原子去除,表面形貌,非晶变形和亚表面应力分布。结果表明:磨料形貌对加工效率和表面质量有显著影响,球形磨料更容易发生塑性变形,锥形磨料更容易发生脆性断裂;此外,磨料形貌和SiC晶体取向之间的相互作用对刮擦过程也有显著影响。本文不仅揭示了不同磨粒形貌下SiC的表面形成机理,而且为实现更高效、更精密的SiC材料加工提供了重要的理论和实验依据。
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