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Mo L-shell x-ray production cross section by heavy Ar11+ ions near the Bohr velocity 在玻尔速度附近重Ar11+离子产生Mo l -壳层x射线的截面
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-10 DOI: 10.1016/j.nimb.2025.165944
Jing Wei , Xianming Zhou , Rui Cheng , Changhui Liang , Yanning Zhang , Xiaoan Zhang , Yongtao Zhao
Mo L-shell x rays have been measured for the bombardment of highly charged heavy Ar11+ ions in the energy range of 1 MeV − 3 MeV. The new experimental data for individual L-subshell and total L-shell x-ray production cross sections were obtained and compared with the theoretical calculations of BEA, PWBA, ECPSSR, ECUSAR, and that of BEA modified by the Coulomb repulsion (CR) and effective nuclear charge (Zeff). The effect of multiple ionization in the atomic parameters was considered. The smaller the fluorescence yield of single ionization, the greater the enhancement of x-ray radiation caused by multiple ionization. On the whole, the BEA-Zeff-CR-MI simulations adopting appropriate multiple ionization atomic parameters are found to be in good agreement with the data.
在1 MeV−3 MeV的能量范围内,测量了高电荷重Ar11+离子轰击Mo l壳层 x 射线。得到了单个l -亚壳层和总l -壳层x射线产生截面的新实验数据,并与BEA、PWBA、ECPSSR、ECUSAR以及经库仑斥力(CR)和有效核电荷(Zeff)修饰的BEA的理论计算结果进行了比较。考虑了多重电离对原子参数的影响。单次电离的荧光产额越小,多次电离对x射线辐射的增强作用越大。总的来说,采用适当的多电离原子参数的BEA-Zeff-CR-MI模拟结果与实际数据吻合较好。
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引用次数: 0
84Kr heavy ion irradiation dose dependent effects on negative dielectric constant of Si-based PiN 84Kr重离子辐照剂量对si基PiN负介电常数的影响
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-25 DOI: 10.1016/j.nimb.2025.165956
Huan Tan , Yumeng Yang , Yaning Gao , Yun Li , Chengyuan Wu , Zhimei Yang , Weihao Lin , Lijun Wang , Min Gong , Mingmin Huang , Yao Ma
The effects of 2150 MeV 84Kr ion irradiation at different irradiation doses on the phenomenon of negative dielectric constant in Si-based PiN devices were studied. SRIM simulation results demonstrated that the incident ion energy was mainly dissipated in the form of electron energy loss. The electrical characterization analysis indicated that as the irradiation dose increased, the forward conduction resistance and the effective carrier concentration (ND) of device exhibited a decreasing trend. The series resistance (Rs) gradually increased from 1.05 Ω to 1.54 Ω. The ideality factor (n) showed a significant increase in irradiated samples compared to unirradiated. However, the irradiation dose changes did not have a significant impact on n. Within the frequency range of 10^3–10^5 Hz, the real part of the dielectric constant decreased with increasing irradiation dose and reached negative value. Within the frequency range of 10^6–10^7 Hz, it gradually approached to zero with the variation of the irradiation dose. The dielectric loss (imaginary part) increased in the low frequency range of 1–10 Hz. The Deep Level Transient Spectroscopy (DLTS) analysis revealed a non-monotonic relationship between defects and ion dose. These findings are of great importance in revealing the micro-mechanism of irradiation induced negative dielectric constant and in developing potential applications of silicon materials and silicon devices.
研究了不同辐照剂量下2150 MeV 84Kr离子辐照对硅基PiN器件负介电常数现象的影响。SRIM模拟结果表明,入射离子能量主要以电子能量损失的形式耗散。电学表征分析表明,随着辐照剂量的增加,器件的正向传导电阻和有效载流子浓度(ND)呈下降趋势。串联电阻Rs从1.05 Ω逐渐增大到1.54 Ω。理想因子(n)表明,与未辐照样品相比,辐照样品的理想因子(n)显著增加。而辐照剂量的变化对n的影响不显著。在10^3 ~ 10^5 Hz频率范围内,介电常数实部随辐照剂量的增加而减小,达到负值。在10^6 ~ 10^7 Hz的频率范围内,随辐照剂量的变化逐渐趋近于零。在1 ~ 10 Hz的低频范围内,介质损耗(虚部)增大。深能级瞬态光谱(DLTS)分析揭示了缺陷与离子剂量之间的非单调关系。这些发现对于揭示辐照诱导负介电常数的微观机理和开发硅材料和硅器件的潜在应用具有重要意义。
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引用次数: 0
Dark matter detector radioimpurities 129I and 210Pb measured with accelerator mass spectrometry 暗物质探测器放射性杂质129I和210Pb的加速器质谱测定
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-10 DOI: 10.1016/j.nimb.2025.165935
Zuzana Slavkovská , Ferdos Dastgiri , L. Keith Fifield , Michaela B. Froehlich , Michael A.C. Hotchkis , Dominik Koll , Silke Merchel , Stefan Pavetich , Stephen G. Tims , Anton Wallner
Sodium iodide crystals doped with thallium NaI(Tl) can be used as detector material for direct dark matter detection by taking advantage of their particle detection properties of scintillation. In order to achieve this, it is crucial that these crystals are of ultra-high purity. Radioimpurities within the crystals may potentially mimic dark matter signals and thus must be quantified, minimised where possible and distinguished from real events. Abundances of radionuclides 129I and 210Pb, which are dominant sources of radioimpurities in NaI(Tl) crystals, were measured using accelerator mass spectrometry at the Australian National University (ANU) and the Australian Nuclear Science and Technology Organisation (ANSTO). NaI powder chemically processed to AgI, and, for the first time, unprocessed NaI powder, were shown to be suitable as AMS targets. A consistent 129I/127I ratio of (2.0 ± 0.3) ×  10−13 was measured in three different commercially available NaI powders, one order of magnitude higher than the measured blank with (1.4 ± 0.3) ×  10−14. Therefore, it was concluded that the choice of NaI powder has a negligible influence on the 129I contribution to low-background dark matter experiments. For 210Pb, different Pb molecular ion species were assessed with PbO2 being the preferred species and applied to investigate different lead oxide compounds for their suitability as Pb carriers. A 210Pb/Pb isotopic ratio of (3.6 ± 1.41.7) ×  10−15 was measured in Pb3O4 powder. This met the required lower activity limit of 210Pb when adding 1 mg of stable lead into 1 kg of NaI(Tl) powder with a desired maximum 210Pb/Pb isotopic ratio of 1 ×  10−14. These results indicate the suitability of the investigated Pb3O4 as a potential carrier for incorporation with Pb extracted from NaI used for dark matter experiments.
掺入铊NaI(Tl)的碘化钠晶体利用其闪烁粒子探测特性,可作为直接探测暗物质的探测器材料。为了实现这一点,这些晶体的纯度必须超高,这一点至关重要。晶体中的放射性杂质可能潜在地模拟暗物质信号,因此必须量化,尽可能最小化,并与真实事件区分开来。在澳大利亚国立大学(ANU)和澳大利亚核科学与技术组织(ANSTO)使用加速器质谱法测量了放射性核素129I和210Pb的丰度,它们是NaI(Tl)晶体中放射性杂质的主要来源。经化学处理得到AgI的NaI粉,首次证明未经处理的NaI粉适合作为AMS靶材。在三种不同的市售NaI粉末中测得一致的129I/127I比值为(2.0±0.3)× 10−13,比测定的空白(1.4±0.3)× 10−14高一个数量级。因此,NaI粉末的选择对低背景暗物质实验中129I贡献的影响可以忽略不计。对于210Pb,以PbO2 -为优选种,对不同的铅分子离子进行了评价,并对不同氧化铅化合物作为Pb载体的适用性进行了研究。在Pb3O4粉末中测得210Pb/Pb同位素比值为(3.6±1.41.7)× 10−15。在1kg的NaI(Tl)粉末中加入1mg稳定铅,达到210Pb的活度下限,最大210Pb/Pb同位素比为1 × 10−14。这些结果表明,所研究的Pb3O4适合作为与从NaI中提取的Pb结合的潜在载体,用于暗物质实验。
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引用次数: 0
Evaluation of the degradation cross-cection as stopping power dependence for pure and mixture molecular samples at cryogenic temperatures 低温下纯分子和混合分子样品的降解截面作为停止功率依赖的评价
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-10 DOI: 10.1016/j.nimb.2025.165926
A.L.F. de Barros , C. Mejia , D.V. Doreste , A. Domaracka , P. Boduch , H. Rothard , E.F. da Silveira
Ices in interstellar and planetary environments are constantly altered by cosmic radiation. Using FTIR spectroscopy, we analyse radiation-induced changes in ices containing H2O, CO, CO2, and CH3OH, molecules abundant in the Solar System and interstellar medium. Molecular degradation is quantified by apparent cross-sections that scale with the electronic stopping power (Se). Literature data reveal a power-law dependence, σd ∝ Sen, influenced by thickness, sputtering yield, and radiochemical effects. This empirical relationship serves as a benchmark for assessing molecular stability and the interplay between sputtering and radiolysis, improving models of chemical evolution in astrophysical ices.
星际和行星环境中的冰不断受到宇宙辐射的改变。利用FTIR光谱,我们分析了含有H2O, CO, CO2和CH3OH的冰的辐射引起的变化,这些分子在太阳系和星际介质中丰富。分子降解是量化的表观横截面与电子停止功率(Se)的比例。文献数据显示,受厚度、溅射率和放射化学效应的影响,σd∝Sen呈幂律关系。这种经验关系可以作为评估分子稳定性和溅射与辐射分解之间相互作用的基准,改进天体物理冰的化学演化模型。
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引用次数: 0
Assessment of sugarcane bagasse-recycled expanded polystyrene reinforced with nano-silica for gamma-rays shielding 用纳米二氧化硅增强甘蔗甘蔗渣再生膨胀聚苯乙烯屏蔽伽马射线的评价
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-21 DOI: 10.1016/j.nimb.2025.165951
A.M. Abdelmonem , M. Saleh , Wageeh Ramadan
An investigation of recycled polystyrene doped with 10 % of bagasse fiber impregnated with different weight percentages of SiO2 (0, 2.5, 5, 7.5 and 10 %) compositions against total and gamma ray. 137Cs and 60Co point sources were used with NaI(Tl) detector to evaluation the capabilities of investigated composites against gamma-ray. Moreover, a theoretical calculation for linear attenuation coefficient (LAC) for these composites by Phy-X/PSD software. Reasonable agreement between the experimental and theoretical parameters was observed. Additionally specific gamma ray constant and dose rate were derived over a wide range of gamma energies (0.015–15 MeV). SP4 and SP0 have the highest and lowest experimental LAC at 1.332 MeV gamma-rays, respectively, at 0.07120 and 0.06425 cm−1. The improvement percentages of empirical TGTF for SP1, SP2, SP3 and SP4 with respected to SP0 are 0.04998, 0.07497, 0.09995 and 0.27462 % at 0.5 cm thickness. An acceptable agreements between the experimental and calculated linear attenuation coefficient (µ) for gamma-ray were observed with relative differences not excesses 7.61 %. Using PAGEX software, the RKair, exposure buildup factor (EBF), and energy absorption buildup factor (EABF) were calculated. At 1.5 MeV gamma energy, the highest values of RKair are 1.073, 1.071, 1.070, 1.068, and 1.067 for SP0, SP1, SP2, and SP4, respectively.
研究了掺10 %蔗渣纤维的再生聚苯乙烯在不同重量百分比的SiO2(0、2.5、5、7.5和10 %)组成中对总射线和伽马射线的影响。利用137Cs和60Co点源与NaI(Tl)探测器对复合材料的抗γ射线能力进行了评价。利用Phy-X/PSD软件对复合材料的线性衰减系数(LAC)进行了理论计算。实验参数与理论参数吻合较好。此外,在较宽的伽马能量范围内(0.015-15 MeV)推导出特定的伽马射线常数和剂量率。SP4和SP0在1.332 MeV伽马射线下的实验LAC最高和最低,分别为0.07120和0.06425 cm−1。在0.5 cm厚度下,SP1、SP2、SP3和SP4的经验TGTF相对于SP0的改善百分比分别为0.04998、0.07497、0.09995和0.27462 %。实验和计算的伽马射线线性衰减系数(µ)之间的一致性可以接受,相对差异不超过7.61 %。利用PAGEX软件计算RKair、暴露积累因子(EBF)和能量吸收积累因子(EABF)。在1.5 MeV伽马能量下,SP0、SP1、SP2和SP4的RKair值分别为1.073、1.071、1.070、1.068和1.067。
{"title":"Assessment of sugarcane bagasse-recycled expanded polystyrene reinforced with nano-silica for gamma-rays shielding","authors":"A.M. Abdelmonem ,&nbsp;M. Saleh ,&nbsp;Wageeh Ramadan","doi":"10.1016/j.nimb.2025.165951","DOIUrl":"10.1016/j.nimb.2025.165951","url":null,"abstract":"<div><div>An investigation of recycled polystyrene doped with 10 % of bagasse fiber impregnated with different weight percentages of SiO<sub>2</sub> (0, 2.5, 5, 7.5 and 10 %) compositions against total and gamma ray. <sup>137</sup>Cs and <sup>60</sup>Co point sources were used with NaI(Tl) detector to evaluation the capabilities of investigated composites against gamma-ray. Moreover, a theoretical calculation for linear attenuation coefficient (LAC) for these composites by Phy-X/PSD software. Reasonable agreement between the experimental and theoretical parameters was observed. Additionally specific gamma ray constant and dose rate were derived over a wide range of gamma energies (0.015–15 MeV). SP4 and SP0 have the highest and lowest experimental LAC at 1.332 MeV gamma-rays, respectively, at 0.07120 and 0.06425 cm<sup>−1</sup>. The improvement percentages of empirical TGTF for SP1, SP2, SP3 and SP4 with respected to SP0 are 0.04998, 0.07497, 0.09995 and 0.27462 % at 0.5 cm thickness. An acceptable agreements between the experimental and calculated linear attenuation coefficient (µ) for gamma-ray were observed with relative differences not excesses 7.61 %. Using PAGEX software, the RK<sub>air</sub>, exposure buildup factor (EBF), and energy absorption buildup factor (EABF) were calculated. At 1.5 MeV gamma energy, the highest values of RK<sub>air</sub> are 1.073, 1.071, 1.070, 1.068, and 1.067 for SP0, SP1, SP2, and SP4, respectively.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"570 ","pages":"Article 165951"},"PeriodicalIF":1.4,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145577216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A study on the halide distribution, halide vacancies, and their diffusion in the δ-CsPb(I0.5Br0.5)3 mixed halide structure δ-CsPb(I0.5Br0.5)3混合卤化物结构中卤化物分布、卤化物空位及其扩散的研究
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-01 DOI: 10.1016/j.nimb.2025.165917
Brooke L. Cochran, Adib J. Samin
Mixed halide perovskites are candidates for solar cell applications in space environments. The non-perovskite δ-structure is known to coexist with the perovskite γ-structure and the kinetic barriers for the γ to δ transition are quite small. So, it is important to study this structure. In this work, we performed density functional theory (DFT)-based calculations on δ-CsPbI3 and δ-CsPb(I0.5Br0.5)3. First, no thermodynamic tendency for segregation was observed in the δ-CsPb(I0.5Br0.5)3 structure. The presence of Br in the vicinity lowered the iodine threshold displacement energy. Iodine vacancies were more stable than the Br vacancies. A strong dependence of the halide vacancies on the metallic atom coordination was observed. Finally, the highest migration energy barriers for the halide vacancies were observed for the cases where the hops were occurring between sites with the highest Pb-coordination. The results of this study may help apprise future efforts for realizing radiation-resistant perovskites for space.
混合卤化物钙钛矿是空间环境中太阳能电池应用的候选材料。非钙钛矿δ-结构与钙钛矿γ-结构共存,且γ向δ转变的动力学障碍很小。因此,研究这种结构是很重要的。在这项工作中,我们对δ-CsPbI3和δ-CsPb(I0.5Br0.5)3进行了密度泛函理论(DFT)计算。首先,δ-CsPb(I0.5Br0.5)3结构中未观察到偏析的热力学趋势。附近Br的存在降低了碘的阈值位移能。碘空位比溴空位更稳定。观察到卤化物空位对金属原子配位有很强的依赖性。最后,当跳跃发生在具有最高pb配位的位点之间时,观察到卤化物空位的迁移能垒最高。这项研究的结果可能有助于为未来实现空间抗辐射钙钛矿的努力提供信息。
{"title":"A study on the halide distribution, halide vacancies, and their diffusion in the δ-CsPb(I0.5Br0.5)3 mixed halide structure","authors":"Brooke L. Cochran,&nbsp;Adib J. Samin","doi":"10.1016/j.nimb.2025.165917","DOIUrl":"10.1016/j.nimb.2025.165917","url":null,"abstract":"<div><div>Mixed halide perovskites are candidates for solar cell applications in space environments. The non-perovskite δ-structure is known to coexist with the perovskite γ-structure and the kinetic barriers for the γ to δ transition are quite small. So, it is important to study this structure. In this work, we performed density functional theory (DFT)-based calculations on δ-CsPbI<sub>3</sub> and δ-CsPb(I<sub>0.5</sub>Br<sub>0.5</sub>)<sub>3</sub>. First, no thermodynamic tendency for segregation was observed in the δ-CsPb(I<sub>0.5</sub>Br<sub>0.5</sub>)<sub>3</sub> structure. The presence of Br in the vicinity lowered the iodine threshold displacement energy. Iodine vacancies were more stable than the Br vacancies. A strong dependence of the halide vacancies on the metallic atom coordination was observed. Finally, the highest migration energy barriers for the halide vacancies were observed for the cases where the hops were occurring between sites with the highest Pb-coordination. The results of this study may help apprise future efforts for realizing radiation-resistant perovskites for space.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"570 ","pages":"Article 165917"},"PeriodicalIF":1.4,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145425572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PKA direction on the primary radiation damage of tungsten by molecular dynamics simulations PKA方向对钨初辐射损伤的分子动力学模拟
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-10-31 DOI: 10.1016/j.nimb.2025.165910
Fei Zhu , Junjie Tao , Yaowu Pei , Ziyi Wu , Tengyue Xiao , Ligang Song , Dong Wang , Xianfeng Ma
Molecular dynamics simulations were used to explore the impact of the direction of primary knock-on atom (200 keV) on the primary radiation damage in tungsten at various temperatures. The 〈110〉 PKA direction induces lower radiation damage, evident from the lower number of surviving Frenkel pairs, reduced interstitial/vacancy clustering fractions, lesser defects in large-sized clusters, and shorter dislocation lengths. The reduced damage in the 〈110〉 direction is attributed to its elevated probability of sub-cascades formation. The formation processes and mechanisms of different types of dislocations have been discussed. Mixed interstitial loops exhibit two distinct 〈100〉 fragment formation pathways. This study reveals three formation mechanisms for 〈100〉 interstitial loops: migrating 1/2〈111〉 loop interactions (primary), punch-out mechanism (secondary), and 1/2〈111〉→〈100〉 transformation through shear loop nucleation/propagation (tertiary). The 〈100〉 vacancy dislocations arise from the collapse of vacancy cluster. These findings provide critical insights into anisotropic radiation damage behavior and defect evolution mechanisms in tungsten.
采用分子动力学模拟方法研究了不同温度下钨原子初生撞击原子(200kev)方向对初生辐射损伤的影响。< 110 > PKA方向的辐射损伤较低,可见于存活的Frenkel对数量较少,间隙/空位簇分数减少,大尺寸簇中的缺陷较少,位错长度较短。在< 110 >方向的损害减少归因于其亚级联形成的可能性增加。讨论了不同类型位错的形成过程和机理。混合间隙环表现出两种不同的< 100 >片段形成途径。本研究揭示了< 100 >间隙环的三种形成机制:迁移1/2 < 111 >环相互作用(初级)、打孔机制(次级)和1/2 < 111 >→< 100 >剪切环成核/扩展转变(次级)。< 100 >的空位位错是由空位团坍缩引起的。这些发现为钨的各向异性辐射损伤行为和缺陷演化机制提供了重要的见解。
{"title":"PKA direction on the primary radiation damage of tungsten by molecular dynamics simulations","authors":"Fei Zhu ,&nbsp;Junjie Tao ,&nbsp;Yaowu Pei ,&nbsp;Ziyi Wu ,&nbsp;Tengyue Xiao ,&nbsp;Ligang Song ,&nbsp;Dong Wang ,&nbsp;Xianfeng Ma","doi":"10.1016/j.nimb.2025.165910","DOIUrl":"10.1016/j.nimb.2025.165910","url":null,"abstract":"<div><div>Molecular dynamics simulations were used to explore the impact of the direction of primary knock-on atom (200 keV) on the primary radiation damage in tungsten at various temperatures. The 〈110〉 PKA direction induces lower radiation damage, evident from the lower number of surviving Frenkel pairs, reduced interstitial/vacancy clustering fractions, lesser defects in large-sized clusters, and shorter dislocation lengths. The reduced damage in the 〈110〉 direction is attributed to its elevated probability of sub-cascades formation. The formation processes and mechanisms of different types of dislocations have been discussed. Mixed interstitial loops exhibit two distinct 〈100〉 fragment formation pathways. This study reveals three formation mechanisms for 〈100〉 interstitial loops: migrating 1/2〈111〉 loop interactions (primary), punch-out mechanism (secondary), and 1/2〈111〉→〈100〉 transformation through shear loop nucleation/propagation (tertiary). The 〈100〉 vacancy dislocations arise from the collapse of vacancy cluster. These findings provide critical insights into anisotropic radiation damage behavior and defect evolution mechanisms in tungsten.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"570 ","pages":"Article 165910"},"PeriodicalIF":1.4,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145425573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The degradation mechanism of the reach-through silicon avalanche photodiode by 1.7 MeV electron irradiation 1.7 MeV电子辐照下透达硅雪崩光电二极管的降解机理
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-23 DOI: 10.1016/j.nimb.2025.165955
Yun Li , Shunchang Cheng , Wuxian Zeng , Yao Ma , Mingmin Huang , Min Gong , Zhimei Yang
The impact of 1.7 MeV electron irradiation on the silicon-based reach-through APD (Si-RAPD) was investigated using deep level transient spectroscopy (DLTS), capacitance-voltage (C-V) and current-voltage (I-V) measurements. DLTS results demonstrate that electron irradiation introduces stable V2 (0/-) defects, which act as recombination centers within the device. As the irradiation dose increases, both doping concentration (ND) and carrier mobility (μ) decrease, while the concentration of V2 (0/-) defects, the higher forward voltage (VF) and resistance (R) exhibit obviously positive correlations with electron irradiation dose. Prolonged irradiation raises the internal temperature of the Si-RAPD, potentially causing partial in-situ annealing of extended defects during the irradiation process. Following annealing at 200 °C for 10 min, the intensity of the P1 peak decreases and its asymmetry becomes more pronounced, indicating that the irradiation-induced defects may undergo transformation, potentially forming new defect states that further influence the electrical properties of the Si-RAPD. Ultimately, electron irradiation leads to a substantial increase in the dark current of Si-RAPDs, indicating a degradation in device performance. Consequently, these results provide valuable insights into the degradation mechanism of Si-RAPD under electron irradiation.
采用深能级瞬态光谱(DLTS)、电容电压(C-V)和电流电压(I-V)测量研究了1.7 MeV电子辐照对硅基贯通APD (Si-RAPD)的影响。DLTS结果表明,电子辐照引入了稳定的V2(0/-)缺陷,这些缺陷在器件内部起着重组中心的作用。随着辐照剂量的增加,掺杂浓度(ND)和载流子迁移率(μ)均降低,而V2(0/-)缺陷浓度、较高正向电压(VF)和电阻(R)与电子辐照剂量呈显著正相关。长时间的辐照提高了Si-RAPD的内部温度,在辐照过程中可能导致扩展缺陷的局部原位退火。在200℃下退火10 min后,P1峰强度降低,不对称性变得更加明显,表明辐照诱导缺陷可能发生转变,可能形成新的缺陷状态,从而进一步影响Si-RAPD的电学性能。最终,电子辐照导致si - rapd的暗电流大幅增加,表明器件性能下降。因此,这些结果为Si-RAPD在电子辐照下的降解机制提供了有价值的见解。
{"title":"The degradation mechanism of the reach-through silicon avalanche photodiode by 1.7 MeV electron irradiation","authors":"Yun Li ,&nbsp;Shunchang Cheng ,&nbsp;Wuxian Zeng ,&nbsp;Yao Ma ,&nbsp;Mingmin Huang ,&nbsp;Min Gong ,&nbsp;Zhimei Yang","doi":"10.1016/j.nimb.2025.165955","DOIUrl":"10.1016/j.nimb.2025.165955","url":null,"abstract":"<div><div>The impact of 1.7 MeV electron irradiation on the silicon-based reach-through APD (Si-RAPD) was investigated using deep level transient spectroscopy (DLTS), capacitance-voltage (C-V) and current-voltage (I-V) measurements. DLTS results demonstrate that electron irradiation introduces stable <em>V<sub>2</sub> (0/-)</em> defects, which act as recombination centers within the device. As the irradiation dose increases, both doping concentration (<em>N<sub>D</sub></em>) and carrier mobility (<em>μ</em>) decrease, while the concentration of <em>V<sub>2</sub> (0/-)</em> defects, the higher forward voltage <em>(V<sub>F</sub>)</em> and resistance (<em>R</em>) exhibit obviously positive correlations with electron irradiation dose. Prolonged irradiation raises the internal temperature of the Si-RAPD, potentially causing partial in-situ annealing of extended defects during the irradiation process. Following annealing at 200 °C for 10 min, the intensity of the P1 peak decreases and its asymmetry becomes more pronounced, indicating that the irradiation-induced defects may undergo transformation, potentially forming new defect states that further influence the electrical properties of the Si-RAPD. Ultimately, electron irradiation leads to a substantial increase in the dark current of Si-RAPDs, indicating a degradation in device performance. Consequently, these results provide valuable insights into the degradation mechanism of Si-RAPD under electron irradiation.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"570 ","pages":"Article 165955"},"PeriodicalIF":1.4,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145620824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Li+ and W+ ion irradiation induced changes on the electrical properties of BaSnO3 ceramics Li+和W+离子辐照引起了BaSnO3陶瓷电学性能的变化
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-25 DOI: 10.1016/j.nimb.2025.165952
S. Shanmuga Sundari , S. Karthika , A. Durairajan , K. Asokan , R.C. Meena
Barium stannate ceramics (BaSnO3) was synthesized using high-temperature mixed-oxide technique. The precursors barium carbonate (BaCO3) and tin oxide (SnO2) were calcinated at 500°C for 6 h and sintered at 1400°C for 4 h and made into pellets. They were irradiated with Lithium (Li+) and Tungsten (W+) ion of 100 MeV energy at a fluence of 1 × 1013 ions/cm2. XRD reveals crystalline nature and cubic structure of the prepared and irradiated BaSnO3 ceramics. The morphology of both as prepared and irradiated ceramics were analysed using SEM images and the ceramics possess hexagonal cubic structure. To analyze the electrical properties, dielectric spectroscopy for the prepared BaSnO3 ceramics and ion irradiated BaSnO3 ceramics were recorded from room temperature to 400 °C in a frequency range of 1 kHz to 2 MHz for every 5 degrees. A. C. conduction mechanism of the ceramics was recorded and the activation energy of the sample before and after ion irradiation was calculated using Arrhenius plot. The activation energy was found to decrease as frequency increases for pristine and irradiated ceramics.
采用高温混合氧化技术合成了锡酸钡陶瓷(BaSnO3)。将前驱体碳酸钡(BaCO3)和氧化锡(SnO2)在500℃下煅烧6 h,在1400℃下烧结4 h,制成球团。用100 MeV能量的锂离子(Li+)和钨离子(W+)辐照,辐照量为1 × 1013个离子/cm2。XRD分析了制备和辐照后的BaSnO3陶瓷的结晶性质和立方结构。利用扫描电镜对制备和辐照后陶瓷的形貌进行了分析,陶瓷具有六方立方结构。为了分析制备的BaSnO3陶瓷和离子辐照BaSnO3陶瓷的电学性能,记录了从室温到400°C,频率为1 kHz至2 MHz,频率为每5度。记录了陶瓷的交流导电机理,并用Arrhenius图计算了离子辐照前后样品的活化能。发现原始陶瓷和辐照陶瓷的活化能随频率的增加而降低。
{"title":"Li+ and W+ ion irradiation induced changes on the electrical properties of BaSnO3 ceramics","authors":"S. Shanmuga Sundari ,&nbsp;S. Karthika ,&nbsp;A. Durairajan ,&nbsp;K. Asokan ,&nbsp;R.C. Meena","doi":"10.1016/j.nimb.2025.165952","DOIUrl":"10.1016/j.nimb.2025.165952","url":null,"abstract":"<div><div>Barium stannate ceramics (BaSnO<sub>3</sub>) was synthesized using high-temperature mixed-oxide technique. The precursors barium carbonate (BaCO<sub>3</sub>) and tin oxide (SnO<sub>2</sub>) were calcinated at 500°C for 6 h and sintered at 1400°C for 4 h and made into pellets. They were irradiated with Lithium (Li<sup>+</sup>) and Tungsten (W<sup>+</sup>) ion of 100 MeV energy at a fluence of 1 × 10<sup>13</sup> ions/cm<sup>2</sup>. XRD reveals crystalline nature and cubic structure of the prepared and irradiated BaSnO<sub>3</sub> ceramics. The morphology of both as prepared and irradiated ceramics were analysed using SEM images and the ceramics possess hexagonal cubic structure. To analyze the electrical properties, dielectric spectroscopy for the prepared BaSnO<sub>3</sub> ceramics and ion irradiated BaSnO<sub>3</sub> ceramics were recorded from room temperature to 400<!--> <!-->°C in a frequency range of 1 kHz to 2 MHz for every 5 degrees. A. C. conduction mechanism of the ceramics was recorded and the activation energy of the sample before and after ion irradiation was calculated using Arrhenius plot. The activation energy was found to decrease as frequency increases for pristine and irradiated ceramics.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"570 ","pages":"Article 165952"},"PeriodicalIF":1.4,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145620828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transmission-type brightness-enhancement system for reactor-based slow positron beamline 基于反应堆的慢正电子束线传输型亮度增强系统
IF 1.4 3区 物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Pub Date : 2026-01-01 Epub Date: 2025-11-19 DOI: 10.1016/j.nimb.2025.165946
Yoshihiro Kuzuya , Nagayasu Oshima , Atsushi Yabuuchi , Atsushi Kinomura
A transmission-type brightness-enhancement system with a simple and compact design has been developed for the slow positron beamline at Kyoto University Research Reactor (KUR). This system allows for rapid switching between primary and brightness-enhanced beams. The continuity of guiding magnetic fields along the beamline is crucial, as it affects longitudinal velocity spreads and beam sizes. A magnetic lens has been designed for the brightness-enhancement system to maintain continuous magnetic fields while enabling the transportation of the primary beam without brightness enhancement. A crystalline 150-nm-thick Ni film was utilized as the re-moderator material. The newly developed brightness-enhancement system demonstrated brightness improvements approaching 10 times, depending on the acceleration voltages within the range of 5.0–6.5 kV. In addition, the energy spread of the beam was reduced to approximately one-tenth of its initial value. The primary beam was successfully transported without brightness enhancement, and positron annihilation lifetime spectroscopy measurements were conducted using the brightness-enhanced beams.
针对京都大学研究堆(KUR)的慢正电子束流,研制了一种设计简单紧凑的透射式增亮系统。该系统允许在主光束和亮度增强光束之间快速切换。引导磁场沿波束线的连续性是至关重要的,因为它影响纵向速度扩散和波束尺寸。为了在不增强亮度的情况下传输主光束,为增强系统设计了一个磁透镜,以保持连续的磁场。采用150 nm厚的结晶Ni薄膜作为再慢化剂材料。新开发的亮度增强系统显示,根据5.0-6.5 kV范围内的加速电压,亮度提高了近10倍。此外,光束的能量传播减少到其初始值的十分之一左右。在没有增强亮度的情况下成功地传输了主光束,并使用增强亮度的光束进行了正电子湮灭寿命谱测量。
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Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
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