Daniel Lawson, Sophie Blundell, Martin Ebert, Otto L. Muskens, and Ioannis Zeimpekis
The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb$_2$Se$_3$ has been identified as particularly promising for a number of applications owing to good optical transparency in the near-infrared part of the spectrum and a high refractive index close to silicon. The crystallization temperature of Sb$_2$Se$_3$ of around 460 K allows switching to be achieved at moderate energies using optical or electrical control signals while providing sufficient data retention time for non-volatile storage. Here, we investigate the parameter space for optical switching of films of Sb$_2$Se$_3$ for a range of film thicknesses relevant for optical applications. By identifying optimal switching conditions, we demonstrate endurance of up to 10$^7$ cycles at reversible switching rates of 20 kHz. Our work demonstrates that the combination of intrinsic film parameters with pumping conditions is particularly critical for achieving high endurance in optical phase change applications.
{"title":"Optical switching beyond a million cycles of low-loss phase change material Sb2Se3","authors":"Daniel Lawson, Sophie Blundell, Martin Ebert, Otto L. Muskens, and Ioannis Zeimpekis","doi":"10.1364/ome.509434","DOIUrl":"https://doi.org/10.1364/ome.509434","url":null,"abstract":"The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb$_2$Se$_3$ has been identified as particularly promising for a number of applications owing to good optical transparency in the near-infrared part of the spectrum and a high refractive index close to silicon. The crystallization temperature of Sb$_2$Se$_3$ of around 460 K allows switching to be achieved at moderate energies using optical or electrical control signals while providing sufficient data retention time for non-volatile storage. Here, we investigate the parameter space for optical switching of films of Sb$_2$Se$_3$ for a range of film thicknesses relevant for optical applications. By identifying optimal switching conditions, we demonstrate endurance of up to 10$^7$ cycles at reversible switching rates of 20 kHz. Our work demonstrates that the combination of intrinsic film parameters with pumping conditions is particularly critical for achieving high endurance in optical phase change applications.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"15 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138545398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Zhang, Q. C. Fan, P. Jing, W. Gao, K. H. Sun, C. Wang, and F. Ji
Microemulsion abrasive-free jet polishing (MAFJP) technology is a novel non-abrasive removal technique that exhibits unique advantages in polishing nonlinear KDP optical material. During MAFJP, the nanoscale water cores in MAFJP fluid impact and slip on the KDP surface, thus leading to contact with the KDP atoms and achieving defect-free removal of KDP through water dissolution. Dissolution is the inverse process of crystal growth and exhibits significant anisotropy. This work first investigated the orientation-determined KDP dissolution removal characteristics. At first, we gained insights into the impacting process of nanoscale water cores based on molecular dynamics simulation and then established an MAFJP removal function model to describe the removal process for KDP. The model considers the dynamic impacting and slipping dissolutions of (001), (010), (100), (111), I-type, and II-type crystal planes, and the final calculated results match perfectly with actual experimental results. This research elucidates the mechanism of orientation-determined MAFJP on KDP, and will promote the application of MAFJP technology in the polishing of single-crystal anisotropic optical materials.
{"title":"Investigation and modeling of orientation-determined removal characteristics of KDP crystal in microemulsion abrasive-free jet polishing from nano to macro scale","authors":"Y. Zhang, Q. C. Fan, P. Jing, W. Gao, K. H. Sun, C. Wang, and F. Ji","doi":"10.1364/ome.506682","DOIUrl":"https://doi.org/10.1364/ome.506682","url":null,"abstract":"Microemulsion abrasive-free jet polishing (MAFJP) technology is a novel non-abrasive removal technique that exhibits unique advantages in polishing nonlinear KDP optical material. During MAFJP, the nanoscale water cores in MAFJP fluid impact and slip on the KDP surface, thus leading to contact with the KDP atoms and achieving defect-free removal of KDP through water dissolution. Dissolution is the inverse process of crystal growth and exhibits significant anisotropy. This work first investigated the orientation-determined KDP dissolution removal characteristics. At first, we gained insights into the impacting process of nanoscale water cores based on molecular dynamics simulation and then established an MAFJP removal function model to describe the removal process for KDP. The model considers the dynamic impacting and slipping dissolutions of (001), (010), (100), (111), I-type, and II-type crystal planes, and the final calculated results match perfectly with actual experimental results. This research elucidates the mechanism of orientation-determined MAFJP on KDP, and will promote the application of MAFJP technology in the polishing of single-crystal anisotropic optical materials.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"135 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138545400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Runsheng Zheng, Tingting Sui, Haohui Zhuo, and Xin Ju
Potassium dihydrogen phosphate and its deuteride (KDP/DKDP) are the only tripled frequency crystals used for inertial confinement fusion. The photonic behavior of KDP under laser irradiation is unknown. In this study, the ultraviolet photon transport behavior of KDP with different growth environments has been simulated based on the Monte Carlo method. By comparison, it is shown that the linear absorption of filtered grown crystal is obviously weaker, and the relaxation time is much longer. Moreover, the concentration of defects inside KDP is the critical cause of linear absorption and relaxation time. Finally, the influence of multi-photon absorption on the damage of KDP is discussed.
{"title":"Monte Carlo simulation for KDP crystals induced by ultraviolet nanosecond laser irradiation","authors":"Runsheng Zheng, Tingting Sui, Haohui Zhuo, and Xin Ju","doi":"10.1364/ome.503879","DOIUrl":"https://doi.org/10.1364/ome.503879","url":null,"abstract":"Potassium dihydrogen phosphate and its deuteride (KDP/DKDP) are the only tripled frequency crystals used for inertial confinement fusion. The photonic behavior of KDP under laser irradiation is unknown. In this study, the ultraviolet photon transport behavior of KDP with different growth environments has been simulated based on the Monte Carlo method. By comparison, it is shown that the linear absorption of filtered grown crystal is obviously weaker, and the relaxation time is much longer. Moreover, the concentration of defects inside KDP is the critical cause of linear absorption and relaxation time. Finally, the influence of multi-photon absorption on the damage of KDP is discussed.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"133 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138546025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Edson R. Cardozo de Oliveira, Priscila Vensaus, Galo J. A. A. Soler-Illia, and Norberto Daniel Lanzillotti-Kimura
Gigahertz acoustic resonators have the potential to advance data processing and quantum communication. However, they are expensive and lack responsiveness to external stimuli, limiting their use in sensing applications. In contrast, low-cost nanoscale mesoporous materials, known for their high surface-to-volume ratio, have shown promise in various applications. We recently demonstrated that mesoporous silicon dioxide (SiO2) and titanium dioxide (TiO2) thin layers can support coherent acoustic modes in the 5 to 100 GHz range. In this study, we propose a new method for designing tunable acoustic resonators using mesoporous thin films on acoustic distributed Bragg reflectors. By simulating the infiltration of the pores with water, we show that the material’s properties could be altered and achieve tunability in the acoustic resonances. We present four device designs and use simulations to predict resonators with Q-factors up to 1500. We also observe that the resonant frequency and intensity show a linear response to water infiltrated in the mesopores, with a tunability of up to 60{%}. Our platform offers a unique opportunity to design cost-effective nanoacoustic sensing and reconfigurable optoacoustic nanodevices.
{"title":"Design of cost-effective environment-responsive nanoacoustic devices based on mesoporous thin films","authors":"Edson R. Cardozo de Oliveira, Priscila Vensaus, Galo J. A. A. Soler-Illia, and Norberto Daniel Lanzillotti-Kimura","doi":"10.1364/ome.504926","DOIUrl":"https://doi.org/10.1364/ome.504926","url":null,"abstract":"Gigahertz acoustic resonators have the potential to advance data processing and quantum communication. However, they are expensive and lack responsiveness to external stimuli, limiting their use in sensing applications. In contrast, low-cost nanoscale mesoporous materials, known for their high surface-to-volume ratio, have shown promise in various applications. We recently demonstrated that mesoporous silicon dioxide (SiO<sub>2</sub>) and titanium dioxide (TiO<sub>2</sub>) thin layers can support coherent acoustic modes in the 5 to 100 GHz range. In this study, we propose a new method for designing tunable acoustic resonators using mesoporous thin films on acoustic distributed Bragg reflectors. By simulating the infiltration of the pores with water, we show that the material’s properties could be altered and achieve tunability in the acoustic resonances. We present four device designs and use simulations to predict resonators with Q-factors up to 1500. We also observe that the resonant frequency and intensity show a linear response to water infiltrated in the mesopores, with a tunability of up to 60<span><span>{%}</span><script type=\"math/tex\">{%}</script></span>. Our platform offers a unique opportunity to design cost-effective nanoacoustic sensing and reconfigurable optoacoustic nanodevices.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"1 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138537112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Banat Gul, Muhammad Salman Khan, Abdelhay Salah Mohamed, Guenez Wafa, and Hijaz Ahmad
Transition metal dichalcogenide (TMDC) materials are considered extremely efficient materials with significant applications in photovoltaics and optoelectronics. Here, the electronic structure and optoelectronic features of new transition metal-containing dichalcogenides are studied using state-of-the-art density functional theoretical calculations. For the analysis of the electronic band structures, we employed a modified Becke-Johnson potential. According to the band structure analysis, Platinum-based dichalcogenides possess an indirect band profile, having the valence band maximum and the conduction band minimum situated at discrete symmetry regions. At the same time, the zirconium-based materials have a direct type band structure at the same Γ-point. We calculated cohesive energies and formation energies to assess the stability of these materials. The substantial optical parameters such as the two parts of the dielectric constant, absorption coefficients, energy loss functions, reflectivity spectra, refractive index, real optical conductivity spectra, spectra, and the extinction coefficients, are calculated. These findings provide insight into potential applications in optoelectronic devices. The calculated band gaps and refractive index revealed an inverse relationship. This research aims to make a significant contribution to the advancement of various and possibly gainful semiconducting technologies, as well as their practical applications.
{"title":"Unveiling the electronic structure and optical properties of two-dimensional TMDCs: first-principles study","authors":"Banat Gul, Muhammad Salman Khan, Abdelhay Salah Mohamed, Guenez Wafa, and Hijaz Ahmad","doi":"10.1364/ome.502050","DOIUrl":"https://doi.org/10.1364/ome.502050","url":null,"abstract":"Transition metal dichalcogenide (TMDC) materials are considered extremely efficient materials with significant applications in photovoltaics and optoelectronics. Here, the electronic structure and optoelectronic features of new transition metal-containing dichalcogenides are studied using state-of-the-art density functional theoretical calculations. For the analysis of the electronic band structures, we employed a modified Becke-Johnson potential. According to the band structure analysis, Platinum-based dichalcogenides possess an indirect band profile, having the valence band maximum and the conduction band minimum situated at discrete symmetry regions. At the same time, the zirconium-based materials have a direct type band structure at the same Γ-point. We calculated cohesive energies and formation energies to assess the stability of these materials. The substantial optical parameters such as the two parts of the dielectric constant, absorption coefficients, energy loss functions, reflectivity spectra, refractive index, real optical conductivity spectra, spectra, and the extinction coefficients, are calculated. These findings provide insight into potential applications in optoelectronic devices. The calculated band gaps and refractive index revealed an inverse relationship. This research aims to make a significant contribution to the advancement of various and possibly gainful semiconducting technologies, as well as their practical applications.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"8 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138537091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yan Liu, Yujia Zhang, Xiaoqing Liu, Yang Liu, Jiezhao Lv, Changfeng Fang, Qingbo Li, and Xian Zhao
Here, we investigate the mechanism of surface damage threshold anisotropy induced by ultrashort laser in potassium dihydrogen phosphate (KDP) crystal. Carrier-lattice nonequilibrium interaction is simulated based on Brillouin light-scattering (BLS) spectroscopy and a complete self-consistent model to obtain the time evolution of carrier density and temperature as well as lattice temperature. The results indicate that the trend of the lattice temperature is consistent with the experimental phenomena. Meanwhile, the electron-phonon coupling effect, in addition to the electron density traditionally considered, is an important factor affecting damage and is a major contributor to the anisotropy of the damage threshold.
{"title":"Study of the surface damage threshold and mechanism of KDP crystal under ultrashort laser irradiation","authors":"Yan Liu, Yujia Zhang, Xiaoqing Liu, Yang Liu, Jiezhao Lv, Changfeng Fang, Qingbo Li, and Xian Zhao","doi":"10.1364/ome.505915","DOIUrl":"https://doi.org/10.1364/ome.505915","url":null,"abstract":"Here, we investigate the mechanism of surface damage threshold anisotropy induced by ultrashort laser in potassium dihydrogen phosphate (KDP) crystal. Carrier-lattice nonequilibrium interaction is simulated based on Brillouin light-scattering (BLS) spectroscopy and a complete self-consistent model to obtain the time evolution of carrier density and temperature as well as lattice temperature. The results indicate that the trend of the lattice temperature is consistent with the experimental phenomena. Meanwhile, the electron-phonon coupling effect, in addition to the electron density traditionally considered, is an important factor affecting damage and is a major contributor to the anisotropy of the damage threshold.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"25 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138537093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sebastian Klein, Pavel Ruchka, Thomas Klumpp, Nils Bartels, Tobias Steinle, and Harald Giessen
3D printing has become a widely used technique for manufacturing micro-optical components for sensing, measurements, biomedical and quantum technologies. Hence, knowing the maximum usable power or damage thresholds of 3D-printed micro-optics becomes crucial. Here we present a first study of the damage threshold values of the IP-S photoresist under high-power cw-, fs-, and ns-pulsed laser radiation with wavelengths in the NIR range. We also study the differences between visual evaluation using bright-field microscopy, DIC-microscopy, and beam-profile damage detection. Finally, we present several application-inspired use cases of 3D printed fiber micro-optics, reaching 10.5 W output power of cw-radiation at 915 nm and 4.5 W and 550 fs pulsed operation at 1040 nm.
{"title":"Effects of high-power laser radiation on polymers for 3D printing micro-optics","authors":"Sebastian Klein, Pavel Ruchka, Thomas Klumpp, Nils Bartels, Tobias Steinle, and Harald Giessen","doi":"10.1364/ome.503929","DOIUrl":"https://doi.org/10.1364/ome.503929","url":null,"abstract":"3D printing has become a widely used technique for manufacturing micro-optical components for sensing, measurements, biomedical and quantum technologies. Hence, knowing the maximum usable power or damage thresholds of 3D-printed micro-optics becomes crucial. Here we present a first study of the damage threshold values of the IP-S photoresist under high-power cw-, fs-, and ns-pulsed laser radiation with wavelengths in the NIR range. We also study the differences between visual evaluation using bright-field microscopy, DIC-microscopy, and beam-profile damage detection. Finally, we present several application-inspired use cases of 3D printed fiber micro-optics, reaching 10.5 W output power of cw-radiation at 915 nm and 4.5 W and 550 fs pulsed operation at 1040 nm.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"18 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138537113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jesse A. Frantz, Jason D. Myers, Anthony Clabeau, Robel Y. Bekele, Nina Hong, Maria A. Vincenti, Marco Gandolfi, and Jasbinder S. Sanghera
The optical constants of germanium antimony telluride (GST), measured by spectroscopic ellipsometry (SE), for the spectral range of 350-30,000 nm are presented. Thin films of GST with composition Ge2Sb2Te5 are prepared by sputtering. As-deposited samples are amorphous, and when heated above the phase transition temperature near 150 °C, films undergo an amorphous to face-centered cubic crystalline phase transition. The optical constants and thicknesses of amorphous and crystalline GST films are determined from multi-angle SE measurements, applying a general oscillator model in both cases. Then, in order to evaluate the optical constants at intermediate states throughout the phase transition, GST films are heated in situ on a temperature stage, and single-angle SE measurements are carried out at discrete temperature steps in a range from 120–158 °C. It is shown that ellipsometric data for partially crystallized states can be fit by treating the GST as an effective medium consisting of its amorphous and crystalline states. Its optical constants, fractional crystallinity, and thickness can be determined at intermediate crystallization states throughout the phase transition. As a practical demonstration of the usefulness of this method, samples are held at fixed temperatures near the transition temperature, and SE is performed periodically. The fraction of crystallinity is determined as a function of time, and an activation energy for the amorphous to crystalline phase transition is determined.
{"title":"Optical constants of germanium antimony telluride (GST) in amorphous, crystalline, and intermediate states","authors":"Jesse A. Frantz, Jason D. Myers, Anthony Clabeau, Robel Y. Bekele, Nina Hong, Maria A. Vincenti, Marco Gandolfi, and Jasbinder S. Sanghera","doi":"10.1364/ome.506019","DOIUrl":"https://doi.org/10.1364/ome.506019","url":null,"abstract":"The optical constants of germanium antimony telluride (GST), measured by spectroscopic ellipsometry (SE), for the spectral range of 350-30,000 nm are presented. Thin films of GST with composition Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> are prepared by sputtering. As-deposited samples are amorphous, and when heated above the phase transition temperature near 150 °C, films undergo an amorphous to face-centered cubic crystalline phase transition. The optical constants and thicknesses of amorphous and crystalline GST films are determined from multi-angle SE measurements, applying a general oscillator model in both cases. Then, in order to evaluate the optical constants at intermediate states throughout the phase transition, GST films are heated in situ on a temperature stage, and single-angle SE measurements are carried out at discrete temperature steps in a range from 120–158 °C. It is shown that ellipsometric data for partially crystallized states can be fit by treating the GST as an effective medium consisting of its amorphous and crystalline states. Its optical constants, fractional crystallinity, and thickness can be determined at intermediate crystallization states throughout the phase transition. As a practical demonstration of the usefulness of this method, samples are held at fixed temperatures near the transition temperature, and SE is performed periodically. The fraction of crystallinity is determined as a function of time, and an activation energy for the amorphous to crystalline phase transition is determined.","PeriodicalId":19548,"journal":{"name":"Optical Materials Express","volume":"13 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2023-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138537106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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