Pub Date : 2013-06-06DOI: 10.1109/IWJT.2013.6644504
J. Borland, S. Qin, P. Oesterlin, K. Huet, W. Johnson, Lauren A. Klein, G. Goodman, A. Wan, S. Novak, T. Murray, R. Matyi, A. Joshi, S. Prussin
Localized Ge and SiGe high mobility channel material is needed for 10nm node and beyond CMOS technology. Thin direct >50% SiGe selective epi followed by oxidation for Ge condensation, 100% Ge selective epi or thermal mixing are methods that require a hard mask and epi interface defects with rough surfaces are always an issue. An alternative approach to epi is using photoresist masking as proposed by Borland et al [1] with Ge-infusion doping (dose controlled deposition), a very high dose implantation technique that leads to amorphous deposition followed by low temperature SPE of the amorphous Ge surface layer but residual interface defects remained.
{"title":"High mobility Ge-channel formation by localized/selective liquid phase epitaxy (LPE) using Ge+B plasma ion implantation and laser melt annealing","authors":"J. Borland, S. Qin, P. Oesterlin, K. Huet, W. Johnson, Lauren A. Klein, G. Goodman, A. Wan, S. Novak, T. Murray, R. Matyi, A. Joshi, S. Prussin","doi":"10.1109/IWJT.2013.6644504","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644504","url":null,"abstract":"Localized Ge and SiGe high mobility channel material is needed for 10nm node and beyond CMOS technology. Thin direct >50% SiGe selective epi followed by oxidation for Ge condensation, 100% Ge selective epi or thermal mixing are methods that require a hard mask and epi interface defects with rough surfaces are always an issue. An alternative approach to epi is using photoresist masking as proposed by Borland et al [1] with Ge-infusion doping (dose controlled deposition), a very high dose implantation technique that leads to amorphous deposition followed by low temperature SPE of the amorphous Ge surface layer but residual interface defects remained.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115689460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-06DOI: 10.1109/IWJT.2013.6644515
H. Wakabayashi
Progress of silicon transistors will be described on junction technologies. Especially, advanced CMOS device and more than Moore technologies will be discussed for various applications.
{"title":"Progress and prospects of silicon transistors based on junction technologies","authors":"H. Wakabayashi","doi":"10.1109/IWJT.2013.6644515","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644515","url":null,"abstract":"Progress of silicon transistors will be described on junction technologies. Especially, advanced CMOS device and more than Moore technologies will be discussed for various applications.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128248194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-06DOI: 10.1109/IWJT.2013.6644510
T. Noda, L. Witters, J. Mitard, E. Rosseel, G. Hellings, C. Vrancken, P. Eyben, H. Bender, A. Thean, N. Horiguchi, W. Vandervorst
Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel. To avoid implant damage influence, Implant-Free SiGe channel-QW with B-doped SiGe epi for extension-S/D formation is used. KMC simulation and SSRM shows that B migration from B-doped SiGe raised-S/D to SiGe-channel can form S/D-extension overlap.
采用原子动力学蒙特卡罗(KMC)扩散模型对Si和SiGe超浅结形成过程中的掺杂物扩散和缺陷进行了分析。用原子KMC方法分析了sige通道量子阱中掺杂物的扩散和缺陷。高Ge含量的SiGe薄层对锗通道量子阱的植入损伤和硼瞬态增强扩散抑制以及缺陷演化具有重要影响。KMC表明，在sige沟道pet中，As袋向sige沟道扩散增强，且sige沟道中As浓度升高。袋扩散的差异可能是硅原子通道与硅原子通道相比具有更高v值失配的原因之一。为了避免植入物损伤的影响，我们使用了无植入物SiGe通道- qw和掺杂b的SiGe epi来扩展- s /D形成。KMC模拟和SSRM表明，B从掺B的SiGe提高S/D到SiGe通道的迁移可以形成S/D扩展重叠。
{"title":"Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe: Analysis of dopants in SiGe-channel Quantum Well","authors":"T. Noda, L. Witters, J. Mitard, E. Rosseel, G. Hellings, C. Vrancken, P. Eyben, H. Bender, A. Thean, N. Horiguchi, W. Vandervorst","doi":"10.1109/IWJT.2013.6644510","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644510","url":null,"abstract":"Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel. To avoid implant damage influence, Implant-Free SiGe channel-QW with B-doped SiGe epi for extension-S/D formation is used. KMC simulation and SSRM shows that B migration from B-doped SiGe raised-S/D to SiGe-channel can form S/D-extension overlap.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117209631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-06DOI: 10.1109/IWJT.2013.6644502
W. Yoo, T. Ishigaki, T. Ueda, K. Kang, N. Hasuike, H. Harima, M. Yoshimoto
Ultra-violet (UV) Raman and multiwavelength photoluminescence (PL) characterization techniques are examined as potential in-line, non-contact dopant activation and diffusion process monitoring techniques for ion implanted silicon in implant activation process steps. Excellent correlations among sheet resistance (Rs), B depth profiles, UV Raman and multiwavelength PL characterization results were achieved. The UV Raman and multiwavelength PL technologies can be used as promising non-contact dopant activation and diffusion process monitoring techniques.
{"title":"Characterization of ion implanted silicon using UV Raman and multiwavelength photoluminescence for in-line dopant activation monitoring","authors":"W. Yoo, T. Ishigaki, T. Ueda, K. Kang, N. Hasuike, H. Harima, M. Yoshimoto","doi":"10.1109/IWJT.2013.6644502","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644502","url":null,"abstract":"Ultra-violet (UV) Raman and multiwavelength photoluminescence (PL) characterization techniques are examined as potential in-line, non-contact dopant activation and diffusion process monitoring techniques for ion implanted silicon in implant activation process steps. Excellent correlations among sheet resistance (Rs), B depth profiles, UV Raman and multiwavelength PL characterization results were achieved. The UV Raman and multiwavelength PL technologies can be used as promising non-contact dopant activation and diffusion process monitoring techniques.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124009772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-06DOI: 10.1109/IWJT.2013.6644507
H. Onoda, Y. Nakashima, T. Nagayama, S. Sakai
Enhancement of transistor drivability with suppressing short channel effect is a mandatory requirement for device scaling. In order to address the requirement, transistor structure transition from 2D bulk planar to SOI or 3D FinFET structures is now proceeding[1-3]. In FinFET structures, high dose tilt implantations are used in source drain extension formation. This implantations cause amorphization of Si fins, and there exists an issue here for difficulty in regrowth of amorphized Si fins during successive activation annealing. For further scaling, fin width becomes narrower, and regrowth from crystal channel also cannot be much expected. Amorphized Si fin cannot be easily regrown to Si fin top during activation annealing, resulting in twin formation and/or poly crystal[4] as shown in the schematic figure (Fig.1). In addition, memory devices also have almost the same transistor structure. Shrinking active Si areas in transistors of flash memory embedded in surrounding STI oxide is similar structure as tall Si fin in FinFET structures. Doping with ion implantation causes narrow active Si areas amorphous, and regrowth to the active Si top is also becoming difficult. Doping without Si amorphization is a challenge for further scaling of transistors both in logic devices and memory devices. This paper reports high dose doping by using implantation to heated Si substrates. Crystalline quality, depth profiles and resistance of As+, P+ and BF2+ implanted Si at elevated temperatures have been investigated. It will be shown that high dose doping without amorphization, and also low resistance of implanted regions after annealing can be successfully embodied.
{"title":"High dose dopant implantation to heated Si substrate without amorphous layer formation","authors":"H. Onoda, Y. Nakashima, T. Nagayama, S. Sakai","doi":"10.1109/IWJT.2013.6644507","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644507","url":null,"abstract":"Enhancement of transistor drivability with suppressing short channel effect is a mandatory requirement for device scaling. In order to address the requirement, transistor structure transition from 2D bulk planar to SOI or 3D FinFET structures is now proceeding[1-3]. In FinFET structures, high dose tilt implantations are used in source drain extension formation. This implantations cause amorphization of Si fins, and there exists an issue here for difficulty in regrowth of amorphized Si fins during successive activation annealing. For further scaling, fin width becomes narrower, and regrowth from crystal channel also cannot be much expected. Amorphized Si fin cannot be easily regrown to Si fin top during activation annealing, resulting in twin formation and/or poly crystal[4] as shown in the schematic figure (Fig.1). In addition, memory devices also have almost the same transistor structure. Shrinking active Si areas in transistors of flash memory embedded in surrounding STI oxide is similar structure as tall Si fin in FinFET structures. Doping with ion implantation causes narrow active Si areas amorphous, and regrowth to the active Si top is also becoming difficult. Doping without Si amorphization is a challenge for further scaling of transistors both in logic devices and memory devices. This paper reports high dose doping by using implantation to heated Si substrates. Crystalline quality, depth profiles and resistance of As+, P+ and BF2+ implanted Si at elevated temperatures have been investigated. It will be shown that high dose doping without amorphization, and also low resistance of implanted regions after annealing can be successfully embodied.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124209051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-06DOI: 10.1109/IWJT.2013.6644512
Shiyu Sun, Shashank Sharma, K. V. Rao, B. Ng, D. Kouzminov, B. Colombeau, N. Variam, S. Muthukrishnan, A. Mayur, A. Brand
The effects of anneal sequences (ms anneal followed by spike anneal vs. spike anneal followed by ms anneal) were explored. Substantial anneal sequence effects on dopant activation were also reported.
{"title":"Integration of millisecond and spike anneals for dopant activation optimization","authors":"Shiyu Sun, Shashank Sharma, K. V. Rao, B. Ng, D. Kouzminov, B. Colombeau, N. Variam, S. Muthukrishnan, A. Mayur, A. Brand","doi":"10.1109/IWJT.2013.6644512","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644512","url":null,"abstract":"The effects of anneal sequences (ms anneal followed by spike anneal vs. spike anneal followed by ms anneal) were explored. Substantial anneal sequence effects on dopant activation were also reported.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123687266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-06DOI: 10.1109/IWJT.2013.6644494
W. Shinohara, Y. Aya, S. Yata, M. Matsumoto, A. Terakawa
A solar cell is a large-area diode with a p-n or a p-i-n junction. Since the invention of the first solar cell with a p-n junction by G.L. Pearson et al. in 1954, various types of solar cells have been investigated. Especially in the decade since 2000, a wide diversity of cell structures, conversion efficiencies and production amounts for solar cells (photovoltaics) were developed. Among them, in the field of thin-film silicon solar cells, the adoption of a p-i-n junction, which means employing an intrinsic amorphous silicon (i-a-Si) layer between the p and n layers, and the stacked type (multi-junction) structure are very important. The i-a-Si layer between doped layers made it possible to obtain photovoltage from the thin-film silicon. And with the multi-junction structure, they have achieved high voltage, high collection efficiency and a low light degradation ratio compared with the single junction.
{"title":"The outline and recent progress of thin-film solar cells and heterojunction with intrinsic thin-layer (HIT) solar cells","authors":"W. Shinohara, Y. Aya, S. Yata, M. Matsumoto, A. Terakawa","doi":"10.1109/IWJT.2013.6644494","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644494","url":null,"abstract":"A solar cell is a large-area diode with a p-n or a p-i-n junction. Since the invention of the first solar cell with a p-n junction by G.L. Pearson et al. in 1954, various types of solar cells have been investigated. Especially in the decade since 2000, a wide diversity of cell structures, conversion efficiencies and production amounts for solar cells (photovoltaics) were developed. Among them, in the field of thin-film silicon solar cells, the adoption of a p-i-n junction, which means employing an intrinsic amorphous silicon (i-a-Si) layer between the p and n layers, and the stacked type (multi-junction) structure are very important. The i-a-Si layer between doped layers made it possible to obtain photovoltage from the thin-film silicon. And with the multi-junction structure, they have achieved high voltage, high collection efficiency and a low light degradation ratio compared with the single junction.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126856654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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