Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598450
Liangxing Hu, S. Goh, Shaoteng Wu, C. S. Tan
A thin layer of copper nitride is sputtered onto silicon wafers by applying nitrogen plasma onto a copper target in a sputtering vacuum chamber. Some of the as-sputtered copper nitride is annealed at 300°C in a vacuum chamber for an hour, resulting in the reduction of the copper nitride into copper. To study its physical and chemical stability, the as-sputtered copper nitride is exposed to the cleanroom environment for varying duration. The exposed copper nitride is characterized for its sheet resistance and water contact angle. Simultaneously, the copper nitride-copper nitride direct bonding is performed at room temperature in cleanroom ambient. The pre-bonded samples are further annealed at 300°C for an hour. The bonded samples are examined for their shear strength to assess the bonding quality.
{"title":"Sputtered Copper Nitride-Copper Nitride Direct Bonding","authors":"Liangxing Hu, S. Goh, Shaoteng Wu, C. S. Tan","doi":"10.1109/LTB-3D53950.2021.9598450","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598450","url":null,"abstract":"A thin layer of copper nitride is sputtered onto silicon wafers by applying nitrogen plasma onto a copper target in a sputtering vacuum chamber. Some of the as-sputtered copper nitride is annealed at 300°C in a vacuum chamber for an hour, resulting in the reduction of the copper nitride into copper. To study its physical and chemical stability, the as-sputtered copper nitride is exposed to the cleanroom environment for varying duration. The exposed copper nitride is characterized for its sheet resistance and water contact angle. Simultaneously, the copper nitride-copper nitride direct bonding is performed at room temperature in cleanroom ambient. The pre-bonded samples are further annealed at 300°C for an hour. The bonded samples are examined for their shear strength to assess the bonding quality.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132536870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598434
K. Takeuchi, T. Suga
Wafer bonding is a key technology for packaging and integration of a wide range of applications. Bond strength is the most important factor for the evaluation of mechanical reliability of the bonding interface, although the measured value depends on the surrounding atmosphere, especially presence of water. In order to quantify the effect of the measurement atmosphere on the bond quality, we developed a new methodology of the bond strength measurement under controlled atmosphere. The bond strengths of bonded silicon nitride wafers are measured using double cantilever beam method in ambient air, dry N2 gas, and under high vacuum. The bonding strength is, in descending order, in vacuum, in N2, and in air. The experimental results suggest that the measurement of bond strength in a controlled atmosphere evaluates the effect of residual water at the bond interface, as well as stress corrosion caused by water in the atmosphere.
{"title":"Quantification of Wafer Bond Strength of Silicon Nitride under Controlled Atmosphere","authors":"K. Takeuchi, T. Suga","doi":"10.1109/LTB-3D53950.2021.9598434","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598434","url":null,"abstract":"Wafer bonding is a key technology for packaging and integration of a wide range of applications. Bond strength is the most important factor for the evaluation of mechanical reliability of the bonding interface, although the measured value depends on the surrounding atmosphere, especially presence of water. In order to quantify the effect of the measurement atmosphere on the bond quality, we developed a new methodology of the bond strength measurement under controlled atmosphere. The bond strengths of bonded silicon nitride wafers are measured using double cantilever beam method in ambient air, dry N2 gas, and under high vacuum. The bonding strength is, in descending order, in vacuum, in N2, and in air. The experimental results suggest that the measurement of bond strength in a controlled atmosphere evaluates the effect of residual water at the bond interface, as well as stress corrosion caused by water in the atmosphere.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127320048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598421
Y. Watabe, F. Goto, M. Uomoto, T. Shimatsu
This study assessed atomic diffusion bonding (ADB) of wafers at room temperature in air using Ag films. By improving structural qualities of Ag films and underlayered Ti films, we achieved bonding in air. Remarkable crystal lattice rearrangement occurred at the Ag–Ag bonded interface.
{"title":"Preliminary Study of Atomic Diffusion Bonding in Air using Ag films","authors":"Y. Watabe, F. Goto, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D53950.2021.9598421","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598421","url":null,"abstract":"This study assessed atomic diffusion bonding (ADB) of wafers at room temperature in air using Ag films. By improving structural qualities of Ag films and underlayered Ti films, we achieved bonding in air. Remarkable crystal lattice rearrangement occurred at the Ag–Ag bonded interface.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116669170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598423
M. Fujino, Kenji Takahashi, K. Kikuchi, Tetsuya Ueda, N. Miyata, T. Miyazaki
We investigated the interface structural properties of direct bonded SiCN substrate using neutron reflectometry (NR). NR results suggest that direct bonded SiCN requires annealing process immediately after bonding process, because of water penetration into non-annealed bonded interface.
{"title":"Interfacial Analysis of Bonded SiCN Interfaces by Neutron Reflectometry","authors":"M. Fujino, Kenji Takahashi, K. Kikuchi, Tetsuya Ueda, N. Miyata, T. Miyazaki","doi":"10.1109/LTB-3D53950.2021.9598423","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598423","url":null,"abstract":"We investigated the interface structural properties of direct bonded SiCN substrate using neutron reflectometry (NR). NR results suggest that direct bonded SiCN requires annealing process immediately after bonding process, because of water penetration into non-annealed bonded interface.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126348745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/ltb-3d53950.2021.9598429
{"title":"[LTB-3D 2021 Front cover]","authors":"","doi":"10.1109/ltb-3d53950.2021.9598429","DOIUrl":"https://doi.org/10.1109/ltb-3d53950.2021.9598429","url":null,"abstract":"","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134438293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598356
L. Thu, T. Matsumae, Y. Kurashima, H. Takagi, E. Higurashi
This study reports the smoothing of rough Au surfaces fabricated by electroless plating by multiple thin film transfer process based on the template stripping method. The formation of ultrasmooth Au with Ra surface roughness of less than 1.0 nm was obtained, which results in surfaces suitable for bonding of Au/Au at low temperature.
{"title":"Surface smoothing of Au plated films by template stripping towards low-temperature bonding for 3D integration","authors":"L. Thu, T. Matsumae, Y. Kurashima, H. Takagi, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598356","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598356","url":null,"abstract":"This study reports the smoothing of rough Au surfaces fabricated by electroless plating by multiple thin film transfer process based on the template stripping method. The formation of ultrasmooth Au with Ra surface roughness of less than 1.0 nm was obtained, which results in surfaces suitable for bonding of Au/Au at low temperature.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133645939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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