Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598368
Kaname Watanabe, Yuya Yamaguchi, A. Kanno, R. Takigawa
Room temperature bonding is essential for wafer-level heterogeneous integration of LiNbO3-on-insulator (LNOI) photonics to Si. This paper reports first demonstration of thin film LNOI optical modulator arrays fabricated on Si wafer by room-temperature wafer bonding with Si nanoadhesive layer.
{"title":"LNOI photonics fabricated on Si wafer by room temperature bonding","authors":"Kaname Watanabe, Yuya Yamaguchi, A. Kanno, R. Takigawa","doi":"10.1109/LTB-3D53950.2021.9598368","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598368","url":null,"abstract":"Room temperature bonding is essential for wafer-level heterogeneous integration of LiNbO3-on-insulator (LNOI) photonics to Si. This paper reports first demonstration of thin film LNOI optical modulator arrays fabricated on Si wafer by room-temperature wafer bonding with Si nanoadhesive layer.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116970184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598362
N. Sano, Kosuke Nishigaya, K. Tanabe
Semiconductor wafer bonding, mediated by upconversion materials, is proposed and demonstrated. Upconversion is a process that converts long wavelength light into short wavelength light, and is expected to be applied to a variety of optoelectronic devices. Bonding with high electrical conductivity and imparting optical properties to the interface is realized by utilizing an adhesive viscous organic matrix with embedded upcinversiion nanoparticles. The application of this method to multijunction solar cells is expected.
{"title":"Upconversion Material-Mediated Semiconductor Bonding","authors":"N. Sano, Kosuke Nishigaya, K. Tanabe","doi":"10.1109/LTB-3D53950.2021.9598362","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598362","url":null,"abstract":"Semiconductor wafer bonding, mediated by upconversion materials, is proposed and demonstrated. Upconversion is a process that converts long wavelength light into short wavelength light, and is expected to be applied to a variety of optoelectronic devices. Bonding with high electrical conductivity and imparting optical properties to the interface is realized by utilizing an adhesive viscous organic matrix with embedded upcinversiion nanoparticles. The application of this method to multijunction solar cells is expected.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128757339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598392
Hiroki Kanai, Y. Kariya, Yoshiki Abe, Y. Yokoyama, Koki Ochi, Ryuichiro Hanada, S. Izuo
The formation process of fatigue crack networks in Sn-Ag-Cu die attach joint was experimentally observed, and reproduced by the Finite Element method Analysis (FEA) based on a crack initiation rule described by the logistic function and Paris type fatigue crack propagation law.
{"title":"Reproduction Analysis of Fatigue Crack Networks in Sn-Ag-Cu Die Attach Joint by FEA","authors":"Hiroki Kanai, Y. Kariya, Yoshiki Abe, Y. Yokoyama, Koki Ochi, Ryuichiro Hanada, S. Izuo","doi":"10.1109/LTB-3D53950.2021.9598392","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598392","url":null,"abstract":"The formation process of fatigue crack networks in Sn-Ag-Cu die attach joint was experimentally observed, and reproduced by the Finite Element method Analysis (FEA) based on a crack initiation rule described by the logistic function and Paris type fatigue crack propagation law.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131946308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598399
Yuki Takahashi, Chokutaro Kawai, I. Shoji
Improved fabrication process enables us to reduce the internal scattering loss of a quasi-phase-matching (QPM) stack of multiple GaAs thin plates. This is accomplished by setting GaAs plates on YAG crystals with laser-grade flat surfaces. The loss per interface (at 1.5 μm) of the fabricated 25-plate stacked GaAs QPM device is 1.8 %, which is 70 % smaller than the 11-plate stack fabricated with the previous process.
{"title":"Improved Process for Room-temperature Bonding Multiple GaAs Thin Plates to Develop Wavelength-conversion Devices","authors":"Yuki Takahashi, Chokutaro Kawai, I. Shoji","doi":"10.1109/LTB-3D53950.2021.9598399","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598399","url":null,"abstract":"Improved fabrication process enables us to reduce the internal scattering loss of a quasi-phase-matching (QPM) stack of multiple GaAs thin plates. This is accomplished by setting GaAs plates on YAG crystals with laser-grade flat surfaces. The loss per interface (at 1.5 μm) of the fabricated 25-plate stacked GaAs QPM device is 1.8 %, which is 70 % smaller than the 11-plate stack fabricated with the previous process.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126345057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598402
P. Birckigt, C. Rothhardt, S. Risse, U. Zeitner
Here, we tackle the paradigm that direct bonding of planar wafers is not suitable on non-planar substrates. In doing so, we also present a new method for measuring the interface surface energy. This yields first guidelines for manufacturing novel optical components which combine different optical properties.
{"title":"Towards Hybrid Optical Components via Non-Planar Direct Bonding","authors":"P. Birckigt, C. Rothhardt, S. Risse, U. Zeitner","doi":"10.1109/LTB-3D53950.2021.9598402","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598402","url":null,"abstract":"Here, we tackle the paradigm that direct bonding of planar wafers is not suitable on non-planar substrates. In doing so, we also present a new method for measuring the interface surface energy. This yields first guidelines for manufacturing novel optical components which combine different optical properties.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126435380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598432
T. Saito, T. Hanasaki, T. Moriwaki, T. Goto, A. Takeda, A. Miura, M. Uomoto, T. Shimatsu
200-nm-thick SiO2 films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.
{"title":"Sputtering Technique to Fabricate Smooth Surface Oxide Film for Room Temperature Bonding","authors":"T. Saito, T. Hanasaki, T. Moriwaki, T. Goto, A. Takeda, A. Miura, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D53950.2021.9598432","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598432","url":null,"abstract":"200-nm-thick SiO<inf>2</inf> films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness S<inf>a</inf> of SiO<inf>2</inf> deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121644792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598375
M. Ichikawa, S. Shichijo, H. Sagawa, S. Bando, Y. Nishioka, D. Wakamatsu, M. Sano, I. Nii, T. Mukai
The luminous flux and temperature characteristics of InGaN-based white light-emitting diodes (LEDs) intended for automotive headlamps were greatly enhanced by bonding a yellow phosphor to the LED chip using surface activated bonding. The performance of these LEDs was found to be suitable for use as headlamps.
{"title":"High Luminous Light-Emitting Diodes for Automotive Headlamps Fabricated Using Surface Activated Bonding","authors":"M. Ichikawa, S. Shichijo, H. Sagawa, S. Bando, Y. Nishioka, D. Wakamatsu, M. Sano, I. Nii, T. Mukai","doi":"10.1109/LTB-3D53950.2021.9598375","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598375","url":null,"abstract":"The luminous flux and temperature characteristics of InGaN-based white light-emitting diodes (LEDs) intended for automotive headlamps were greatly enhanced by bonding a yellow phosphor to the LED chip using surface activated bonding. The performance of these LEDs was found to be suitable for use as headlamps.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129731231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598404
Moe Nozaki, Y. Kariya, Yoshiyuki Hiroshima, Nobuo Taketomi, K. Ohashi, Kenichi Tomioka, Shunichi Kikuchi, Jack Tan
The effects of structural factors on the delamination of the stacked via in high-density multilayer printed wiring boards were investigated by a statistical approach. Although reducing the height of via or the number of via stacks is effective to prevent the delamination, if these cannot be reduced, the risk of the delamination is eased by increasing the pitch of the stacked via.
{"title":"Delamination Analysis of Stacked Via in High-Density Multilayer Printed Wiring Boards by FEA","authors":"Moe Nozaki, Y. Kariya, Yoshiyuki Hiroshima, Nobuo Taketomi, K. Ohashi, Kenichi Tomioka, Shunichi Kikuchi, Jack Tan","doi":"10.1109/LTB-3D53950.2021.9598404","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598404","url":null,"abstract":"The effects of structural factors on the delamination of the stacked via in high-density multilayer printed wiring boards were investigated by a statistical approach. Although reducing the height of via or the number of via stacks is effective to prevent the delamination, if these cannot be reduced, the risk of the delamination is eased by increasing the pitch of the stacked via.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128470158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598355
A. Kausas, V. Yahia, A. Tsuji, Rui Zhang, Xiangyu Zhou, Y. Honda, M. Yoshida, T. Taira
Multi-stack chips comprised of sapphire and Nd3+:YAG crystals with variable doping concentration were made by surface activated bonding technology. By use of sophisticated amplification setup for end-pumped solid-state laser, >2J operation with nanosecond pulses was obtained under room temperature.
{"title":"Tailor-made Laser Chip by Bonding for High Energy Laser System","authors":"A. Kausas, V. Yahia, A. Tsuji, Rui Zhang, Xiangyu Zhou, Y. Honda, M. Yoshida, T. Taira","doi":"10.1109/LTB-3D53950.2021.9598355","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598355","url":null,"abstract":"Multi-stack chips comprised of sapphire and Nd3+:YAG crystals with variable doping concentration were made by surface activated bonding technology. By use of sophisticated amplification setup for end-pumped solid-state laser, >2J operation with nanosecond pulses was obtained under room temperature.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127776501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598453
R. Kagawa, K. Kawamura, Y. Sakaida, Sumito Ouchi, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang
The self-heating of GaN-HEMTs is a serious issue in terms of the device performance and reliability. Therefore, diamond is the most promising candidate as a heat spreader material for HEMTs application because of its extremely high thermal conductivity. Therefore, we fabricate GaN-HEMTs on diamond substrate by using surface activated bonding method.
gan - hemt的自热是影响器件性能和可靠性的一个严重问题。因此，金刚石具有极高的导热性，是hemt应用中最有前途的导热材料。因此，我们采用表面活化键合的方法在金刚石衬底上制备gan - hemt。
{"title":"Fabrication of GaN/SiC/diamond structure for efficient thermal management of power device","authors":"R. Kagawa, K. Kawamura, Y. Sakaida, Sumito Ouchi, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang","doi":"10.1109/LTB-3D53950.2021.9598453","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598453","url":null,"abstract":"The self-heating of GaN-HEMTs is a serious issue in terms of the device performance and reliability. Therefore, diamond is the most promising candidate as a heat spreader material for HEMTs application because of its extremely high thermal conductivity. Therefore, we fabricate GaN-HEMTs on diamond substrate by using surface activated bonding method.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121894574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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