Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598192
S. Iacovo, Soon-Wook Kim, F. Nagano, Lan Peng, F. Inoue, A. Phommahaxay, E. Beyne
Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on the different processing steps but also to the properties of the SiCN dielectric used as bonding material.
{"title":"The unique properties of SiCN as bonding material for hybrid bonding","authors":"S. Iacovo, Soon-Wook Kim, F. Nagano, Lan Peng, F. Inoue, A. Phommahaxay, E. Beyne","doi":"10.1109/LTB-3D53950.2021.9598192","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598192","url":null,"abstract":"Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on the different processing steps but also to the properties of the SiCN dielectric used as bonding material.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116623298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598366
Y. Fan, T. Maekawa, K. Watanabe, R. Takigawa
Bonding of Indium phosphide (InP)-based electronic device and Silicon Carbide (SiC) heat spreader is beneficial to thermal management. In this study, InP/SiC structure was demonstrated using surface activated direct bonding at room temperature. The bond quality was evaluated by dicing testing and tensile testing.
{"title":"Fabrication of InP/SiC structure using surface activated direct bonding","authors":"Y. Fan, T. Maekawa, K. Watanabe, R. Takigawa","doi":"10.1109/LTB-3D53950.2021.9598366","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598366","url":null,"abstract":"Bonding of Indium phosphide (InP)-based electronic device and Silicon Carbide (SiC) heat spreader is beneficial to thermal management. In this study, InP/SiC structure was demonstrated using surface activated direct bonding at room temperature. The bond quality was evaluated by dicing testing and tensile testing.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116189645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598433
T. Amino, M. Uomoto, T. Shimatsu
Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time tw in vacuum of 1.0 × 10−6 Pa between film deposition and bonding. Bonding strength decreased suddenly at tw greater than 3.6 × 103 s, which differed from behavior observed using Ti films.
{"title":"Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films","authors":"T. Amino, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D53950.2021.9598433","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598433","url":null,"abstract":"Room-temperature bonding using 20-nm thick amorphous Si films was studied as a function of waiting time t<inf>w</inf> in vacuum of 1.0 × 10<sup>−6</sup> Pa between film deposition and bonding. Bonding strength decreased suddenly at t<inf>w</inf> greater than 3.6 × 10<sup>3</sup> s, which differed from behavior observed using Ti films.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122851024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598435
Jianbo Liang, Daiki Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa
The fabrication of Ga2O3(010)/Si(100) and Ga2O3(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga2O3 and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).
{"title":"Fabrication of Ga2O3/Si direct bonding interface for high power device applications","authors":"Jianbo Liang, Daiki Takatsuki, Y. Shimizu, M. Higashiwaki, Y. Ohno, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598435","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598435","url":null,"abstract":"The fabrication of Ga<inf>2</inf>O<inf>3</inf>(010)/Si(100) and Ga<inf>2</inf>O<inf>3</inf>(001)/Si(100) interfaces is achieved by the surface-activated bonding (SAB) of Ga<inf>2</inf>O<inf>3</inf> and Si substrates. The structure of the bonding interfaces is characterized by transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123191956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598371
T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi
SiC and Ga2O3 surfaces were directly bonded by hydrophilic bonding with an ~0.7-nm-thick intermediate layer. The SiC surface was - OH-terminated with hydrofluoric acid, instead of conventional oxidizing treatment, to minimize the formation of the intermediate layer. This would contribute to efficient heat disspation across bonding interface.
{"title":"Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga2O3 film through atomically thin intermediate layer","authors":"T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598371","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598371","url":null,"abstract":"SiC and Ga2O3 surfaces were directly bonded by hydrophilic bonding with an ~0.7-nm-thick intermediate layer. The SiC surface was - OH-terminated with hydrofluoric acid, instead of conventional oxidizing treatment, to minimize the formation of the intermediate layer. This would contribute to efficient heat disspation across bonding interface.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114163296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598372
M. Murugesan, H. Hashimoto, J. Bea, M. Koyanagi, T. Fukushima
A low thermal budget (≤ 250 °C) chip-to-chip and chip-to-wafer three-dimensional (3D) integration of application-specific smaller artificial intelligence (AI) chips (2.5 mm × 2.5 mm) with 6 level metal (M#) layers were carried out by using TSV (Through – Si - Via) - last method. Several back-end-of-line processes were carefully optimized, such as multi-die thinning, M1 revealing, protection of revealed M1 during TSV metallization, die-level Cu-chemical mechanical polishing for re-distribution layer formation, and μ-bumping were carefully optimized. The diode parameter evaluation for the chips before and after 3D-integration revealed the successful fabrication of AI module for specific applications.
采用TSV (Through - Si - Via) - last方法，实现了具有6层金属(m#)层的特定小型人工智能(AI)芯片(2.5 mm × 2.5 mm)的低热预算(≤250°C)芯片到芯片和芯片到晶圆的三维(3D)集成。对多模细化、M1显露、TSV金属化过程中显露M1的保护、模级cu化学机械抛光形成再分布层、μ碰撞等后端工艺进行了精心优化。通过对芯片3d集成前后的二极管参数评估，揭示了特定应用的人工智能模块的成功制造。
{"title":"Chip-to-Chip/Wafer Three-Dimensional Integration of 2.5 mm-sized Neuron and Memory Chips by Via-Last Approach","authors":"M. Murugesan, H. Hashimoto, J. Bea, M. Koyanagi, T. Fukushima","doi":"10.1109/LTB-3D53950.2021.9598372","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598372","url":null,"abstract":"A low thermal budget (≤ 250 °C) chip-to-chip and chip-to-wafer three-dimensional (3D) integration of application-specific smaller artificial intelligence (AI) chips (2.5 mm × 2.5 mm) with 6 level metal (M#) layers were carried out by using TSV (Through – Si - Via) - last method. Several back-end-of-line processes were carefully optimized, such as multi-die thinning, M1 revealing, protection of revealed M1 during TSV metallization, die-level Cu-chemical mechanical polishing for re-distribution layer formation, and μ-bumping were carefully optimized. The diode parameter evaluation for the chips before and after 3D-integration revealed the successful fabrication of AI module for specific applications.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127006191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598403
S. Hanahara, N. Toyoda
Low temperature bodings of Cu by gas cluster ion beam (GCIB) irradiations with organic acid vapor were studied. GCIBs induce surface smoothing and enhancement of surface reactions without severe damage. Therefore, it is promising for the surface activated bonding (SAB). In this study, organic acid vapor is introduced during GCIB irradiation in order to assist surface oxide removal on metal films (such as Cu, Ni). From XPS study, NiO layer was selectively removed by reaction with adsorbed organic acid. Preliminary bonding experiment using this technique shows promising result for Cu-Cu bonding.
{"title":"Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding","authors":"S. Hanahara, N. Toyoda","doi":"10.1109/LTB-3D53950.2021.9598403","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598403","url":null,"abstract":"Low temperature bodings of Cu by gas cluster ion beam (GCIB) irradiations with organic acid vapor were studied. GCIBs induce surface smoothing and enhancement of surface reactions without severe damage. Therefore, it is promising for the surface activated bonding (SAB). In this study, organic acid vapor is introduced during GCIB irradiation in order to assist surface oxide removal on metal films (such as Cu, Ni). From XPS study, NiO layer was selectively removed by reaction with adsorbed organic acid. Preliminary bonding experiment using this technique shows promising result for Cu-Cu bonding.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128137647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598370
Hiromu Onodera, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama
Bonding position accuracy of InP/Si direct transfer bonding for heterogeneous integration were investigated. It was revealed that large difference of coordinate misalignment between X and Y directions exists and this may be strongly related to the tension of adhesive sheet.
{"title":"Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration","authors":"Hiromu Onodera, T. Kikuchi, Y. Ohiso, T. Amemiya, N. Nishiyama","doi":"10.1109/LTB-3D53950.2021.9598370","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598370","url":null,"abstract":"Bonding position accuracy of InP/Si direct transfer bonding for heterogeneous integration were investigated. It was revealed that large difference of coordinate misalignment between X and Y directions exists and this may be strongly related to the tension of adhesive sheet.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133464293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598438
S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi
Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.
{"title":"Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer","authors":"S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598438","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598438","url":null,"abstract":"Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130067499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598380
H. Nagai, K. Kawamura, Y. Sakaida, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang
We successfully fabricate a Ga2O3/3C-SiC direct bonding by the surface-activated bonding (SAB) of 3C-SiC epitaxial layer grown on Si substrate to Ga2O3 substrate. The structure of bonding interface will be investigated by transmission electron microscope (TEM).
{"title":"Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation","authors":"H. Nagai, K. Kawamura, Y. Sakaida, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang","doi":"10.1109/LTB-3D53950.2021.9598380","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598380","url":null,"abstract":"We successfully fabricate a Ga<inf>2</inf>O<inf>3</inf>/3C-SiC direct bonding by the surface-activated bonding (SAB) of 3C-SiC epitaxial layer grown on Si substrate to Ga<inf>2</inf>O<inf>3</inf> substrate. The structure of bonding interface will be investigated by transmission electron microscope (TEM).","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130852470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：