Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598360
Yuta Takahashi, M. Fujino, H. Nakagawa, K. Kikuchi, T. Taino
In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA was observed at 0.3 K in a Si (5 nm) sample deposited on Nb thin film.
{"title":"Bonded interface properties of Nb direct bonding with Si intermediate layer for 3D interconnection of superconducting devices","authors":"Yuta Takahashi, M. Fujino, H. Nakagawa, K. Kikuchi, T. Taino","doi":"10.1109/LTB-3D53950.2021.9598360","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598360","url":null,"abstract":"In this study, Deposited Nb and Si/Nb samples were bonded directly by surface activated bonding method at room temperature. TEM observation of the Nb/Nb interface confirmed an intermediate layer of about 3 nm. A superconducting current of 4–6 mA was observed at 0.3 K in a Si (5 nm) sample deposited on Nb thin film.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123098620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598359
S. Fukumoto, T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, M. Hayase, E. Higurashi
Gallium nitride (GaN) substrate was directly bonded with silicon substrate using a sequential wet treatment consisting of H2SO4/H2O2 and NH3/H2O2 mixtures under atmospheric conditions. The bonding strength of the bonded substrates annealed at 300 °C reached up to 6.98 MPa. This study contributes to the development for GaN-based integrated devices.
{"title":"Direct bonding of GaN and Si substrates using wet cleaning processes","authors":"S. Fukumoto, T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, M. Hayase, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598359","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598359","url":null,"abstract":"Gallium nitride (GaN) substrate was directly bonded with silicon substrate using a sequential wet treatment consisting of H<inf>2</inf>SO<inf>4</inf>/H<inf>2</inf>O<inf>2</inf> and NH<inf>3</inf>/H<inf>2</inf>O<inf>2</inf> mixtures under atmospheric conditions. The bonding strength of the bonded substrates annealed at 300 °C reached up to 6.98 MPa. This study contributes to the development for GaN-based integrated devices.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134293258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598367
J. Ong, K. Shie, Chih Chen
This investigation shows bonding strength improvement by adjusting the microstructures in the Cu joints. The Cu pad used in this investigation is nanotwinned Cu pad with surface ratio more than 95% <111> preferred oriented. Result showed that bonding strength can be obtained in low temperature and pressure applied and short time during bonding process. Once the bonding time or pressure increases, recrystallization and grain growth triggered. By adjusting bonding time or bonding temperature, the microstructure in Cu pad can be controlled thus the bonding strength can be improved by adjusting microstructures in the Cu pads.
{"title":"Microstructure analysis and tensile strength of low temperature Cu bonds using highly-<111> Cu","authors":"J. Ong, K. Shie, Chih Chen","doi":"10.1109/LTB-3D53950.2021.9598367","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598367","url":null,"abstract":"This investigation shows bonding strength improvement by adjusting the microstructures in the Cu joints. The Cu pad used in this investigation is nanotwinned Cu pad with surface ratio more than 95% <111> preferred oriented. Result showed that bonding strength can be obtained in low temperature and pressure applied and short time during bonding process. Once the bonding time or pressure increases, recrystallization and grain growth triggered. By adjusting bonding time or bonding temperature, the microstructure in Cu pad can be controlled thus the bonding strength can be improved by adjusting microstructures in the Cu pads.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132243154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598381
Shunsuke Furuse, N. Fujii, Kengo Kotoo, Naoki Ogawa, Taichi Yamada, T. Hirano, S. Saito, Y. Hagimoto, H. Iwamoto
In this study, we investigated the relationship between misalignment and bonding strength before and after annealing in the Cu-Cu hybrid bonding process. Before the annealing process, the bonding strength tended to decrease linearly as the misalignment increased. However, we found that this correlation changed after the annealing, seemingly due to thermal expansion in the Cu.
{"title":"Impacts of Misalignment on Bonding Strength of Cu-Cu Hybrid Bonding","authors":"Shunsuke Furuse, N. Fujii, Kengo Kotoo, Naoki Ogawa, Taichi Yamada, T. Hirano, S. Saito, Y. Hagimoto, H. Iwamoto","doi":"10.1109/LTB-3D53950.2021.9598381","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598381","url":null,"abstract":"In this study, we investigated the relationship between misalignment and bonding strength before and after annealing in the Cu-Cu hybrid bonding process. Before the annealing process, the bonding strength tended to decrease linearly as the misalignment increased. However, we found that this correlation changed after the annealing, seemingly due to thermal expansion in the Cu.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123390461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598426
Kang Wang, Wenbo Hu, Shengli Wu, Shuwei Fan, Hongxing Wang
For realizing the heterogeneous integration of semiconductor materials and overcoming the heat dissipation problem of GaN-based high-power semiconductor devices, Mo/Au interlayers were applied to realize the room temperature bonding between Si and Si, GaN and Si, GaN and diamond, GaN HEMTs and diamond wafers in atmospheric air. Low voidage and high bonding strength were achieved. In addition, the temperature distributions and thermal resistances of the devices bonded on different substrates (sapphire, Si, SiC and diamond) with Mo/Au interlayers were calculated by numerical simulation.
{"title":"Room Temperature Bonding of Semiconductor Materials Based on Mo/Au Interlayer","authors":"Kang Wang, Wenbo Hu, Shengli Wu, Shuwei Fan, Hongxing Wang","doi":"10.1109/LTB-3D53950.2021.9598426","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598426","url":null,"abstract":"For realizing the heterogeneous integration of semiconductor materials and overcoming the heat dissipation problem of GaN-based high-power semiconductor devices, Mo/Au interlayers were applied to realize the room temperature bonding between Si and Si, GaN and Si, GaN and diamond, GaN HEMTs and diamond wafers in atmospheric air. Low voidage and high bonding strength were achieved. In addition, the temperature distributions and thermal resistances of the devices bonded on different substrates (sapphire, Si, SiC and diamond) with Mo/Au interlayers were calculated by numerical simulation.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129012030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598414
R. Morisaki, J. Sakurai, C. Oka, T. Yamazaki, T. Akao, T. Takahashi, H. Tsuji, N. Ohno, S. Hata
We clarify a mechanism for longer lifetime of the fast atom beam (FAB) source for surface activated bonding proposed in our previous study. The new FAB source achieves highly efficient FAB irradiation and suppression of generation of fine carbon (C) particles. In this study, the distribution of sputtering and deposition on the inner wall of the C electrodes have been evaluated by measuring the thickness of the electrodes before and after long-time use. In the new source, the C erosion area due to sputtering is localized near the irradiation port and the sputtered C is deposited on other electrode surface, whereas in the conventional one, the erosion occurs on all surfaces of C electrodes. The reduction of electrode erosion due to sputtering contributes significantly to the extension of the lifetime of the new FAB source.
{"title":"New Long Life Fast Atom Beam Source for Surface Activated Bonding","authors":"R. Morisaki, J. Sakurai, C. Oka, T. Yamazaki, T. Akao, T. Takahashi, H. Tsuji, N. Ohno, S. Hata","doi":"10.1109/LTB-3D53950.2021.9598414","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598414","url":null,"abstract":"We clarify a mechanism for longer lifetime of the fast atom beam (FAB) source for surface activated bonding proposed in our previous study. The new FAB source achieves highly efficient FAB irradiation and suppression of generation of fine carbon (C) particles. In this study, the distribution of sputtering and deposition on the inner wall of the C electrodes have been evaluated by measuring the thickness of the electrodes before and after long-time use. In the new source, the C erosion area due to sputtering is localized near the irradiation port and the sputtered C is deposited on other electrode surface, whereas in the conventional one, the erosion occurs on all surfaces of C electrodes. The reduction of electrode erosion due to sputtering contributes significantly to the extension of the lifetime of the new FAB source.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124733314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598393
R. Knechtel, H. Mehner, T. Berthold, C. Van Buggenhout, Dirk Terryn
Anodic bonding is in general a very attractive low temperature bonding method. Utilizing the progress in glass structuring and with adapted bonding conditions it can be used for CMOS-MEMS integrated wafers enabaling very complex, multifunctional chip solutions.
{"title":"Anodic Bonding a Low Temperature Bonding Method for Processed MEMS and CMOS Wafers","authors":"R. Knechtel, H. Mehner, T. Berthold, C. Van Buggenhout, Dirk Terryn","doi":"10.1109/LTB-3D53950.2021.9598393","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598393","url":null,"abstract":"Anodic bonding is in general a very attractive low temperature bonding method. Utilizing the progress in glass structuring and with adapted bonding conditions it can be used for CMOS-MEMS integrated wafers enabaling very complex, multifunctional chip solutions.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121305231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598364
Yota Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, Jianbo Liang, N. Shigekawa
The high-temperature electrical stability of p+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p+-Si/p-diamond HDs are stabler than diamond SBDs against annealing.
{"title":"High temperature stability of p+-Si/p-diamond heterojunction diodes","authors":"Yota Uehigashi, S. Ohmagari, H. Umezawa, H. Yamada, Jianbo Liang, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598364","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598364","url":null,"abstract":"The high-temperature electrical stability of p+-Si/p-diamond heterojunction diodes (HDs) fabricated by using surface activated bonding are investigate and compared with that of Al/diamond Schottky barrier diodes (SBDs). We suggest that p+-Si/p-diamond HDs are stabler than diamond SBDs against annealing.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125217686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598418
Yoshihiro Koga, S. Yamada, Shuji Tanaka, K. Kurita
We proposed the fabrication of the laminated wafer with the conductive diamond layer as an alternative SOI wafer for micro-electro mechanical systems (MEMS) sensors by chemical vapor deposition (CVD) and surface-activated bonding (SAB), in order to prevent the charge-up of devices on a BOX layer during plasma treatments. We demonstrated that the use of this laminated wafer could be deposited the boron-doped diamond layer and be bonded a silicon wafer (layer) at room temperature without a thermal stress. Therefore, we believe that this laminated wafer can contribute to the improvement of MEMS sensors as an alternative SOI wafer.
{"title":"Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors","authors":"Yoshihiro Koga, S. Yamada, Shuji Tanaka, K. Kurita","doi":"10.1109/LTB-3D53950.2021.9598418","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598418","url":null,"abstract":"We proposed the fabrication of the laminated wafer with the conductive diamond layer as an alternative SOI wafer for micro-electro mechanical systems (MEMS) sensors by chemical vapor deposition (CVD) and surface-activated bonding (SAB), in order to prevent the charge-up of devices on a BOX layer during plasma treatments. We demonstrated that the use of this laminated wafer could be deposited the boron-doped diamond layer and be bonded a silicon wafer (layer) at room temperature without a thermal stress. Therefore, we believe that this laminated wafer can contribute to the improvement of MEMS sensors as an alternative SOI wafer.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134316653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598388
C. Muller, M. Jatlaoui, M. Pommier
Low temperature solders usage for broadband assemblies represent an important challenge for the industry. Using lower temperatures for reflow subsequently shows less deformation on mother boards used for optical sub-assemblies and then less RF parasitics. However, some parts in optical sub-assemblies, like laser diodes, require good thermal dissipation to work properly and avoid unwanted modulations. This work will present an innovative way to use SnBi (Tin-Bismuth) eutectic alloy to assemble an integrated capacitive Silicon interposer on top of which a laser diode can be assembled as well.
{"title":"Ultra-broadband Integrated Capacitive Silicon Interposer assembled with SnBi Eutectic Solder","authors":"C. Muller, M. Jatlaoui, M. Pommier","doi":"10.1109/LTB-3D53950.2021.9598388","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598388","url":null,"abstract":"Low temperature solders usage for broadband assemblies represent an important challenge for the industry. Using lower temperatures for reflow subsequently shows less deformation on mother boards used for optical sub-assemblies and then less RF parasitics. However, some parts in optical sub-assemblies, like laser diodes, require good thermal dissipation to work properly and avoid unwanted modulations. This work will present an innovative way to use SnBi (Tin-Bismuth) eutectic alloy to assemble an integrated capacitive Silicon interposer on top of which a laser diode can be assembled as well.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115095011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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