Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598451
F. Inoue, Kimoon Park, J. Derakhshandeh, B. Yoo
Extensive electrochemical analysis for Indium chloride electrolyte have been executed to make it applicable for fine pitch micro bump application. Indium micro bumps with under bump materials such as Copper, Nickel and Cobalt were fabricated in 20 μm pitch through-resist pattern. There was no defect at the interface between In and UBMs after deposition. The formation kinetics of intermetallic compounds and the interface reaction have also been investigated.
{"title":"Electrodeposition of Indium for Low Temperature 3D Stacking","authors":"F. Inoue, Kimoon Park, J. Derakhshandeh, B. Yoo","doi":"10.1109/LTB-3D53950.2021.9598451","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598451","url":null,"abstract":"Extensive electrochemical analysis for Indium chloride electrolyte have been executed to make it applicable for fine pitch micro bump application. Indium micro bumps with under bump materials such as Copper, Nickel and Cobalt were fabricated in 20 μm pitch through-resist pattern. There was no defect at the interface between In and UBMs after deposition. The formation kinetics of intermetallic compounds and the interface reaction have also been investigated.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126721278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598428
M. Kuball, J. Pomeroy
Heterogenous integration of materials and devices opens huge opportunities for exploiting device structures which benefit from an optimal combination of electronic and thermal material properties. It is critically important to assess heat transfer across their interfaces to avoid thermal bottlenecks resulting in excessive device temperatures though. Experimental techniques to assess thermal conductivity of materials and thermal boundary resistance between materials are reviewed, with examples from GaN-on-Diamond, diamond to metal diamond composites.
{"title":"Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications","authors":"M. Kuball, J. Pomeroy","doi":"10.1109/LTB-3D53950.2021.9598428","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598428","url":null,"abstract":"Heterogenous integration of materials and devices opens huge opportunities for exploiting device structures which benefit from an optimal combination of electronic and thermal material properties. It is critically important to assess heat transfer across their interfaces to avoid thermal bottlenecks resulting in excessive device temperatures though. Experimental techniques to assess thermal conductivity of materials and thermal boundary resistance between materials are reviewed, with examples from GaN-on-Diamond, diamond to metal diamond composites.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128519549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598193
M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto
We demonstrated atomic diffusion bonding (ADB) of wafers using AlN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AlN film with c-axis perpendicular to the film plane formed.
{"title":"Atomic Diffusion Bonding using AlN films","authors":"M. Uomoto, H. Yoshida, T. Shimatsu, T. Saito, T. Moriwaki, N. Kato, Y. Miyamoto, K. Miyamoto","doi":"10.1109/LTB-3D53950.2021.9598193","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598193","url":null,"abstract":"We demonstrated atomic diffusion bonding (ADB) of wafers using AlN films at room temperature. Results showed that crystal lattice rearrangement occurred at the bonded interface and integrated AlN film with c-axis perpendicular to the film plane formed.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131023942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598412
Hongxing Wang
Diamond has many excellent properties, such as wide bandgap, high carrier mobility, high breakdown voltage, high thermal conductivity, superior mechanical strength, and chemical stability among the well-known materials. In this talk, large size diamond development and application will be investigated. For heteroepitaxial single crystal diamond growth, preferred orientation Ir (001) film was deposited on sapphire substrate. Then bias enhanced CVD method was used to form diamond nucleation, on which a microwave plasma CVD(MPCVD) system was used to grow single crystal diamond. Then, tungsten atoms were introduced into MPCVD to grow high quality single crystal diamond on this sample. Thereafter, a laser machining technique was used to produce patterned trenches in diamond substrate, on which microchannels were achieved by epitaxial lateral overgrowth of diamond layer by MPCVD. In addition, we studied the enhanced heat spreading due to conduction followed by convective dissipation of a locally heated resistor mimicking a linear hot spot within electronic chips. The combined effect of conductive spreading and convective dissipation exhibited a significant cooling enhancement, which could be useful for GaN/diamond Composite Devices.
{"title":"Progress of diamond substrate development","authors":"Hongxing Wang","doi":"10.1109/LTB-3D53950.2021.9598412","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598412","url":null,"abstract":"Diamond has many excellent properties, such as wide bandgap, high carrier mobility, high breakdown voltage, high thermal conductivity, superior mechanical strength, and chemical stability among the well-known materials. In this talk, large size diamond development and application will be investigated. For heteroepitaxial single crystal diamond growth, preferred orientation Ir (001) film was deposited on sapphire substrate. Then bias enhanced CVD method was used to form diamond nucleation, on which a microwave plasma CVD(MPCVD) system was used to grow single crystal diamond. Then, tungsten atoms were introduced into MPCVD to grow high quality single crystal diamond on this sample. Thereafter, a laser machining technique was used to produce patterned trenches in diamond substrate, on which microchannels were achieved by epitaxial lateral overgrowth of diamond layer by MPCVD. In addition, we studied the enhanced heat spreading due to conduction followed by convective dissipation of a locally heated resistor mimicking a linear hot spot within electronic chips. The combined effect of conductive spreading and convective dissipation exhibited a significant cooling enhancement, which could be useful for GaN/diamond Composite Devices.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120841116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598452
K. Sawai, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
We fabricate polarization-inverted GaN/GaN junctions by directly bonding freestanding GaN (0001) substrates to each other. The conventional surface activated bonding process is used. A ~1-nm defect layer is observed at the as-bonded Ga-face/Ga-face interface using transmission electron microscopy.
{"title":"Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding","authors":"K. Sawai, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598452","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598452","url":null,"abstract":"We fabricate polarization-inverted GaN/GaN junctions by directly bonding freestanding GaN (0001) substrates to each other. The conventional surface activated bonding process is used. A ~1-nm defect layer is observed at the as-bonded Ga-face/Ga-face interface using transmission electron microscopy.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132903563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598377
T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi
A polycrystalline diamond substrate treated with a mixture of NH3 and H2O2 was directly bonded with a plasma-activated Si wafer. They formed atomic bonds by annealing at 250 °C after contacting surfaces in atmospheric air. The bonding method would contribute to the future large-scale integration of diamond heat spreaders with electronics.
{"title":"Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions","authors":"T. Matsumae, Y. Kurashima, H. Takagi, H. Umezawa, E. Higurashi","doi":"10.1109/LTB-3D53950.2021.9598377","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598377","url":null,"abstract":"A polycrystalline diamond substrate treated with a mixture of NH3 and H2O2 was directly bonded with a plasma-activated Si wafer. They formed atomic bonds by annealing at 250 °C after contacting surfaces in atmospheric air. The bonding method would contribute to the future large-scale integration of diamond heat spreaders with electronics.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123995395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598420
S. Hiza, Y. Shirayanagi, Y. Takiguchi, K. Nishimura, T. Matsumae, Y. Kurashima, E. Higurashi, H. Takagi, A. Chayahara, Y. Mokuno, H. Yamada, K. Kasamura, H. Toyoda, A. Kubota, M. Yamamuka
GaN-on-Diamond high electron mobility transistors were successfully fabricated by surface-activated room-temperature bonding technique. Various diamond substrates were finely polished and bonded to GaN-HEMTs by surface-activated room-temperature bonding. Fabricated devices showed superior characteristics in thermal dissipation compared to the device with conventional structure.
{"title":"GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology","authors":"S. Hiza, Y. Shirayanagi, Y. Takiguchi, K. Nishimura, T. Matsumae, Y. Kurashima, E. Higurashi, H. Takagi, A. Chayahara, Y. Mokuno, H. Yamada, K. Kasamura, H. Toyoda, A. Kubota, M. Yamamuka","doi":"10.1109/LTB-3D53950.2021.9598420","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598420","url":null,"abstract":"GaN-on-Diamond high electron mobility transistors were successfully fabricated by surface-activated room-temperature bonding technique. Various diamond substrates were finely polished and bonded to GaN-HEMTs by surface-activated room-temperature bonding. Fabricated devices showed superior characteristics in thermal dissipation compared to the device with conventional structure.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124224361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598385
Zexin Wan, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa
5-μm Al films are bonded to β-Ga2O3 (−201) substrates using surface activated bonding. The nanostructural properties of as-bonded interfaces are examined using transmission electron microscopy and energy dispersive X-ray spectroscopy. 5-nm intermediate layers, which are likely to be due to the surface activation process, are observed.
{"title":"Nanostructural Analysis of Al/β-Ga2O3 Interface Fabricated Using Surface Activated Bonding","authors":"Zexin Wan, Jianbo Liang, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa","doi":"10.1109/LTB-3D53950.2021.9598385","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598385","url":null,"abstract":"5-μm Al films are bonded to β-Ga2O3 (−201) substrates using surface activated bonding. The nanostructural properties of as-bonded interfaces are examined using transmission electron microscopy and energy dispersive X-ray spectroscopy. 5-nm intermediate layers, which are likely to be due to the surface activation process, are observed.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126554834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/LTB-3D53950.2021.9598390
Tomoya Onuki, Shigenori Saito, M. Sasaki
A new method of bonding the solid photoresist film is proposed for improving the thickness uniformity on the chip substrate. The water-soluble polymer supports the resist film and is dissolved before patterning. The chip area can be used up to the edge. The resist thickness demonstrated is 1.73 μm +/−1.2% in maximum deviation.
{"title":"Uniform resist film on chip substrate prepared by bonding film coated on sheet","authors":"Tomoya Onuki, Shigenori Saito, M. Sasaki","doi":"10.1109/LTB-3D53950.2021.9598390","DOIUrl":"https://doi.org/10.1109/LTB-3D53950.2021.9598390","url":null,"abstract":"A new method of bonding the solid photoresist film is proposed for improving the thickness uniformity on the chip substrate. The water-soluble polymer supports the resist film and is dissolved before patterning. The chip area can be used up to the edge. The resist thickness demonstrated is 1.73 μm +/−1.2% in maximum deviation.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130671217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-05DOI: 10.1109/ltb-3d53950.2021.9598429
{"title":"[LTB-3D 2021 Front cover]","authors":"","doi":"10.1109/ltb-3d53950.2021.9598429","DOIUrl":"https://doi.org/10.1109/ltb-3d53950.2021.9598429","url":null,"abstract":"","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134438293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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