Petter Ström, C. Vantaraki, Rajdeep Kaur, T. Tran, G. Nagy, V. Kapaklis, Daniel Primetzhofer
Post‐synthetic, position selective addition of properties to materials constitutes a paradigm shifting step in materials engineering. The approach enables creation of material systems inaccessible by equilibrium and near‐equilibrium synthesis, and can be applied in novel practical applications as well as fundamental physics studies over a range of length‐ and energy scales. Ion implantation is a versatile, scalable, industry‐compatible tool, enabling the next step in this development. Here, we employ ion implantation to design and functionalize a mesoscopic magnetic architecture. We utilize a self‐supporting mask combined with implantation of 60 keV Fe ions to create an embedded array of approximately 8 µm wide circular ferromagnetic regions in a Pd film. The approach is contactless, free from surface residues and requires no focusing or scanning of the beam. Magnetic properties of the array are probed with longitudinal magneto‐optic Kerr effect measurement while varying sample temperature and applied magnetic field. Microstructures are visualized with Kerr microscopy and compared to the Fe distribution measured with microbeam proton induced X‐ray emission. Sample topography after implantation is obtained by atomic force microscopy, while ion beam analysis is employed to probe concentration depth profiles of implanted Fe, impurities and to investigate material mixing.This article is protected by copyright. All rights reserved.
材料的后合成、位置选择性添加特性是材料工程学的一个范式转换步骤。这种方法可以创造出平衡和近平衡合成无法实现的材料系统，并可应用于新颖的实际应用以及一系列长度和能量尺度的基础物理学研究。离子注入是一种多功能、可扩展、与工业兼容的工具，使这一发展迈出了新的一步。在这里，我们采用离子注入技术来设计和功能化介观磁性结构。我们利用自支撑掩模，结合 60 keV 铁离子植入，在钯薄膜中创建了一个宽约 8 µm 的圆形铁磁区域嵌入阵列。这种方法是非接触式的，没有表面残留物，也不需要对光束进行聚焦或扫描。在改变样品温度和外加磁场的同时，利用纵向磁光克尔效应测量法探测阵列的磁特性。利用克尔显微镜观察微结构，并与利用微束质子诱导 X 射线发射测量的铁分布进行比较。植入后的样品形貌由原子力显微镜获得，而离子束分析则用于探测植入的铁、杂质的浓度深度剖面，并研究材料混合情况。本文受版权保护。
{"title":"Position Selective Introduction of Ferromagnetism on the Micro‐ and Nanoscale in a Paramagnetic Thin Palladium Film","authors":"Petter Ström, C. Vantaraki, Rajdeep Kaur, T. Tran, G. Nagy, V. Kapaklis, Daniel Primetzhofer","doi":"10.1002/pssr.202400053","DOIUrl":"https://doi.org/10.1002/pssr.202400053","url":null,"abstract":"Post‐synthetic, position selective addition of properties to materials constitutes a paradigm shifting step in materials engineering. The approach enables creation of material systems inaccessible by equilibrium and near‐equilibrium synthesis, and can be applied in novel practical applications as well as fundamental physics studies over a range of length‐ and energy scales. Ion implantation is a versatile, scalable, industry‐compatible tool, enabling the next step in this development. Here, we employ ion implantation to design and functionalize a mesoscopic magnetic architecture. We utilize a self‐supporting mask combined with implantation of 60 keV Fe ions to create an embedded array of approximately 8 µm wide circular ferromagnetic regions in a Pd film. The approach is contactless, free from surface residues and requires no focusing or scanning of the beam. Magnetic properties of the array are probed with longitudinal magneto‐optic Kerr effect measurement while varying sample temperature and applied magnetic field. Microstructures are visualized with Kerr microscopy and compared to the Fe distribution measured with microbeam proton induced X‐ray emission. Sample topography after implantation is obtained by atomic force microscopy, while ion beam analysis is employed to probe concentration depth profiles of implanted Fe, impurities and to investigate material mixing.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"30 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140365658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.
{"title":"Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field","authors":"Yifei Zhao, Zhongyao Li","doi":"10.1002/pssr.202300496","DOIUrl":"https://doi.org/10.1002/pssr.202300496","url":null,"abstract":"For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"10 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139774549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.
{"title":"Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field","authors":"Yifei Zhao, Zhongyao Li","doi":"10.1002/pssr.202300496","DOIUrl":"https://doi.org/10.1002/pssr.202300496","url":null,"abstract":"For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"430 13","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139833906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.
{"title":"Improved NH3 Gas Sensing Performance of Femtosecond‐Laser Textured Silicon by the Decoration of Au Nanoparticles","authors":"Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao","doi":"10.1002/pssr.202400015","DOIUrl":"https://doi.org/10.1002/pssr.202400015","url":null,"abstract":"The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"40 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139846751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.
{"title":"Improved NH3 Gas Sensing Performance of Femtosecond‐Laser Textured Silicon by the Decoration of Au Nanoparticles","authors":"Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao","doi":"10.1002/pssr.202400015","DOIUrl":"https://doi.org/10.1002/pssr.202400015","url":null,"abstract":"The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":" 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139786723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d sub‐sup ) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d sub‐sup exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d sub‐sup can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d sub‐sup substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d sub‐sup can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.
{"title":"Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)‐Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role","authors":"Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang","doi":"10.1002/pssr.202400003","DOIUrl":"https://doi.org/10.1002/pssr.202400003","url":null,"abstract":"In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d\u0000sub‐sup\u0000) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d\u0000sub‐sup\u0000 exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d\u0000sub‐sup\u0000 can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d\u0000sub‐sup\u0000 substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d\u0000sub‐sup\u0000 can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"13 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139851380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d sub‐sup ) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d sub‐sup exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d sub‐sup can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d sub‐sup substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d sub‐sup can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.
{"title":"Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)‐Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role","authors":"Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang","doi":"10.1002/pssr.202400003","DOIUrl":"https://doi.org/10.1002/pssr.202400003","url":null,"abstract":"In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d\u0000sub‐sup\u0000) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d\u0000sub‐sup\u0000 exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d\u0000sub‐sup\u0000 can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d\u0000sub‐sup\u0000 substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d\u0000sub‐sup\u0000 can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":" 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139791762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.
二维铁电（FE）异质结构因其潜在的器件应用和所涉及的基础物理学而成为近期备受关注的课题。在本研究中，我们采用第一性原理计算来研究二维铁电异质结构（特别是 In2Se3/h-BN 和 CuInP2S6(CIPS)/h-BN 异质结构）中铁电对电子结构的控制。我们的研究结果表明，通过逆转 FE 层的极化，异质结构的能带排列可以在 II 型和 I 型之间相互转换。对于 In2Se3/h-BN，面外极化的变化可归因于 In2Se3 单层的本征电场阻碍和促进了电荷从 h-BN 向 In2Se3 的转移。对于 CIPS/h-BN 异质结构，由于存在内置电场，Cdn 构型中的电荷转移量更高，而且 Cdn 构型中的界面相互作用更强，因此极化值比 Cdn 构型更高。此外，异质结构的载流子迁移率也可以通过 FE 极化得到有效调节。这些发现凸显了具有可调带排列和带隙的 FE 异质结构在开发纳米级光电器件中的潜在意义。本文受版权保护。
{"title":"Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures","authors":"Songmin Liu, Pan Zhou, Pengfei Hou, Lizhong Sun","doi":"10.1002/pssr.202300479","DOIUrl":"https://doi.org/10.1002/pssr.202300479","url":null,"abstract":"Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"265 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139857832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.
二维铁电（FE）异质结构因其潜在的器件应用和所涉及的基础物理学而成为近期备受关注的课题。在本研究中，我们采用第一性原理计算来研究二维铁电异质结构（特别是 In2Se3/h-BN 和 CuInP2S6(CIPS)/h-BN 异质结构）中铁电对电子结构的控制。我们的研究结果表明，通过逆转 FE 层的极化，异质结构的能带排列可以在 II 型和 I 型之间相互转换。对于 In2Se3/h-BN，面外极化的变化可归因于 In2Se3 单层的本征电场阻碍和促进了电荷从 h-BN 向 In2Se3 的转移。对于 CIPS/h-BN 异质结构，由于存在内置电场，Cdn 构型中的电荷转移量更高，而且 Cdn 构型中的界面相互作用更强，因此极化值比 Cdn 构型更高。此外，异质结构的载流子迁移率也可以通过 FE 极化得到有效调节。这些发现凸显了具有可调带排列和带隙的 FE 异质结构在开发纳米级光电器件中的潜在意义。本文受版权保护。
{"title":"Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures","authors":"Songmin Liu, Pan Zhou, Pengfei Hou, Lizhong Sun","doi":"10.1002/pssr.202300479","DOIUrl":"https://doi.org/10.1002/pssr.202300479","url":null,"abstract":"Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"20 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139797592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yutao Niu, Ting Xu, Kun Meng, Xiuhan Li, Yan Wei, Yannan Zhang, Xiaohua Yu, Ju Rong
The insufficiency of freshwater supplies has posed a serious threat to sustainable socio‐economic growth, and seawater desalination is considered to be the most promising solution to alleviate such pressure. Currently, two‐dimensional (2D) carbon membranes are identified as deserving candidates since their high permeability and multiple tunable properties. However, they remain challenging to systematically uncover the potential relationships between structures and properties in various 2D carbon materials. For this, we trained a machine learning (ML) model based on feature datasets of 2D carbon materials effecting desalination properties. The results suggest that structures with a maximum pore size of 10‐12 atoms and atomic densities between 0.28 and 0.41 are more likely to achieve high properties. We selected the Cml‐MOR based on MOR type mordenite zeolite for validation. Further, Cml‐MOR is demonstrated to feature remarkable salt ion adsorption. The effective water flux of Cml‐MOR is 113.51 L·cm‐2·day‐1·MPa‐1, and the salt rejection at 110 MPa could reach to 98.9%. This work is expected to apply this efficient method to investigate the structure and properties of 2D carbon membranes with great structural diversity; this will attract more people to focus on them and explore their important potential for practical applications.This article is protected by copyright. All rights reserved.
{"title":"Data‐driven strategies for accelerated structural exploration of high‐performance two‐dimensional carbon‐based seawater desalination membranes","authors":"Yutao Niu, Ting Xu, Kun Meng, Xiuhan Li, Yan Wei, Yannan Zhang, Xiaohua Yu, Ju Rong","doi":"10.1002/pssr.202300403","DOIUrl":"https://doi.org/10.1002/pssr.202300403","url":null,"abstract":"The insufficiency of freshwater supplies has posed a serious threat to sustainable socio‐economic growth, and seawater desalination is considered to be the most promising solution to alleviate such pressure. Currently, two‐dimensional (2D) carbon membranes are identified as deserving candidates since their high permeability and multiple tunable properties. However, they remain challenging to systematically uncover the potential relationships between structures and properties in various 2D carbon materials. For this, we trained a machine learning (ML) model based on feature datasets of 2D carbon materials effecting desalination properties. The results suggest that structures with a maximum pore size of 10‐12 atoms and atomic densities between 0.28 and 0.41 are more likely to achieve high properties. We selected the Cml‐MOR based on MOR type mordenite zeolite for validation. Further, Cml‐MOR is demonstrated to feature remarkable salt ion adsorption. The effective water flux of Cml‐MOR is 113.51 L·cm‐2·day‐1·MPa‐1, and the salt rejection at 110 MPa could reach to 98.9%. This work is expected to apply this efficient method to investigate the structure and properties of 2D carbon membranes with great structural diversity; this will attract more people to focus on them and explore their important potential for practical applications.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"5 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139525963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：