The morphotropic phase boundary (MPB), which arises from the combination of antiferroelectric and ferroelectric phases, demonstrates the highest dielectric constant (κ) compared to other phases. This emphasizes its potential as a leading contender for dielectric films in future DRAM capacitors. MPB‐based high‐κ materials using hafnia have shown a trade‐off between equivalent oxide thickness (EOT) and leakage current density (Jleak) when the crystallization temperature increases with scaling the thickness. In this study, we employed a microwave annealing (MWA) method that can achieve low‐temperature crystallization below 350 °C. The purpose of this method is to mitigate the trade‐off relationships and achieve the strict criteria of current DRAM capacitors. These criteria include low EOT (less than 4 Å) and Jleak (less than 10‐7 A/cm2 at 0.8 V) characteristics. The MWA is capable of relatively low‐temperature annealing by supplying energy to the films through both thermal energy and dipole vibration energy. As a result, we achieved a record low EOT of 3.76 Å and a low leakage current characteristic of 4.2×10‐8 A/cm2 at 0.8 V concurrently. We are confident that our research can be important in addressing the challenges associated with reducing the size of next‐generation DRAM capacitors.This article is protected by copyright. All rights reserved.
由反铁电相和铁电相组合而成的形态相界（MPB）与其他相位相比，具有最高的介电常数（κ）。这凸显了它作为未来 DRAM 电容器介电薄膜主要竞争者的潜力。当结晶温度随着厚度的增加而增加时，使用哈夫尼亚的基于 MPB 的高κ材料显示出等效氧化物厚度（EOT）和漏电流密度（Jleak）之间的权衡。在本研究中，我们采用了一种微波退火 (MWA) 方法，该方法可实现低于 350 °C 的低温结晶。这种方法的目的是缓解权衡关系，实现当前 DRAM 电容器的严格标准。这些标准包括低 EOT（小于 4 Å）和 Jleak（0.8 V 时小于 10-7 A/cm2 ）特性。MWA 能够通过热能和偶极振动能向薄膜提供能量，从而实现相对低温退火。因此，我们同时实现了 3.76 Å 的创纪录低 EOT 和 0.8 V 时 4.2×10-8 A/cm2 的低漏电流特性。我们相信，我们的研究对解决与缩小下一代 DRAM 电容器尺寸相关的挑战具有重要意义。本文受版权保护。
{"title":"Stabilization of Morphotropic Phase Boundary in Hafnia Via Microwave Low‐temperature Crystallization Process for Next‐generation DRAM Technology","authors":"Hunbeom Shin, Giuk Kim, Sujeong Lee, Hyojun Choi, Sangho Lee, Sangmok Lee, Yunseok Nam, Geonhyeong Kang, Hyungjun Kim, Jinho Ahn, Sanghun Jeon","doi":"10.1002/pssr.202400108","DOIUrl":"https://doi.org/10.1002/pssr.202400108","url":null,"abstract":"The morphotropic phase boundary (MPB), which arises from the combination of antiferroelectric and ferroelectric phases, demonstrates the highest dielectric constant (κ) compared to other phases. This emphasizes its potential as a leading contender for dielectric films in future DRAM capacitors. MPB‐based high‐κ materials using hafnia have shown a trade‐off between equivalent oxide thickness (EOT) and leakage current density (Jleak) when the crystallization temperature increases with scaling the thickness. In this study, we employed a microwave annealing (MWA) method that can achieve low‐temperature crystallization below 350 °C. The purpose of this method is to mitigate the trade‐off relationships and achieve the strict criteria of current DRAM capacitors. These criteria include low EOT (less than 4 Å) and Jleak (less than 10‐7 A/cm2 at 0.8 V) characteristics. The MWA is capable of relatively low‐temperature annealing by supplying energy to the films through both thermal energy and dipole vibration energy. As a result, we achieved a record low EOT of 3.76 Å and a low leakage current characteristic of 4.2×10‐8 A/cm2 at 0.8 V concurrently. We are confident that our research can be important in addressing the challenges associated with reducing the size of next‐generation DRAM capacitors.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"97 25","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140984307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seong Min Park, Jaegyu Kim, G. Anoop, W. Seol, Su Yong Lee, Hyunjin Joh, Tae Yeon Kim, Jeonyong Choi, Seungbum Hong, Chan‐Ho Yang, Hyeon Jun Lee, J. Jo
Exploring the unique physical properties of oxide perovskites necessitates their growth on diverse single‐crystal substrates. The thin‐film growth of perovskite SrMnO3 (SMO) has been a particular focus of research due to its emerging room‐temperature multiferroicity. Herein, the epitaxial thin films of (110)‐oriented SMO are grown on the piezoelectric (110)‐oriented (1–x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN‐PT) substrate. The effects of the thickness and oxygen annealing on the crystal structure, stoichiometry, and ferroelectric properties of the SMO thin film are systematically investigated. The tensile strain produced by the lattice mismatch between the bulk SMO and the PMN‐PT substrate causes an expansion of the c‐lattice parallel to the in‐plane direction of the substrate. The films show larger a‐, b‐, and c‐lattice parameters than the bulk material, resulting in volume expansion of the unit cell. This lattice expansion is attributed to the generation of oxygen vacancies driven by the reduced formation energy caused by the high elastic strain. Piezoelectric force microscopy reveals that the SMO film contains domains with strain‐mediated in‐plane and vacancy‐mediated out‐of‐plane polarization. Furthermore, the piezoelectric response of the PMN‐PT substrate effectively modulates the biaxial tensile strain in the SMO film, offering a potential strategy for controlling the crystal structure and ferroelectric properties of SMO.
要探索氧化物包晶的独特物理性质，就必须在不同的单晶基底上生长它们。由于包晶 SrMnO3（SMO）具有新兴的室温多铁性，因此其薄膜生长一直是研究的重点。本文在压电（110）取向（1-x）Pb(Mg1/3Nb2/3)O3-xPbTiO3（PMN-PT）基底上生长了取向（110）的 SMO 外延薄膜。系统研究了厚度和氧退火对 SMO 薄膜晶体结构、化学计量学和铁电特性的影响。大块 SMO 和 PMN-PT 衬底之间的晶格失配产生的拉伸应变导致 c-晶格平行于衬底面内方向膨胀。薄膜的 a、b 和 c-晶格参数大于块体材料，导致单位晶胞体积膨胀。这种晶格膨胀可归因于高弹性应变导致的形成能降低所驱动的氧空位的产生。压电显微镜显示，SMO 薄膜包含具有应变介导的面内极化和空位介导的面外极化的畴。此外，PMN-PT 衬底的压电响应可有效调节 SMO 薄膜中的双轴拉伸应变，为控制 SMO 的晶体结构和铁电特性提供了一种潜在的策略。
{"title":"Ferroelectric SrMnO3 Thin Film Grown on (110)‐Oriented PMN‐PT Substrate","authors":"Seong Min Park, Jaegyu Kim, G. Anoop, W. Seol, Su Yong Lee, Hyunjin Joh, Tae Yeon Kim, Jeonyong Choi, Seungbum Hong, Chan‐Ho Yang, Hyeon Jun Lee, J. Jo","doi":"10.1002/pssr.202400025","DOIUrl":"https://doi.org/10.1002/pssr.202400025","url":null,"abstract":"\u0000Exploring the unique physical properties of oxide perovskites necessitates their growth on diverse single‐crystal substrates. The thin‐film growth of perovskite SrMnO3 (SMO) has been a particular focus of research due to its emerging room‐temperature multiferroicity. Herein, the epitaxial thin films of (110)‐oriented SMO are grown on the piezoelectric (110)‐oriented (1–x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN‐PT) substrate. The effects of the thickness and oxygen annealing on the crystal structure, stoichiometry, and ferroelectric properties of the SMO thin film are systematically investigated. The tensile strain produced by the lattice mismatch between the bulk SMO and the PMN‐PT substrate causes an expansion of the c‐lattice parallel to the in‐plane direction of the substrate. The films show larger a‐, b‐, and c‐lattice parameters than the bulk material, resulting in volume expansion of the unit cell. This lattice expansion is attributed to the generation of oxygen vacancies driven by the reduced formation energy caused by the high elastic strain. Piezoelectric force microscopy reveals that the SMO film contains domains with strain‐mediated in‐plane and vacancy‐mediated out‐of‐plane polarization. Furthermore, the piezoelectric response of the PMN‐PT substrate effectively modulates the biaxial tensile strain in the SMO film, offering a potential strategy for controlling the crystal structure and ferroelectric properties of SMO.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"50 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140662261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Petter Ström, C. Vantaraki, Rajdeep Kaur, T. Tran, G. Nagy, V. Kapaklis, Daniel Primetzhofer
Post‐synthetic, position selective addition of properties to materials constitutes a paradigm shifting step in materials engineering. The approach enables creation of material systems inaccessible by equilibrium and near‐equilibrium synthesis, and can be applied in novel practical applications as well as fundamental physics studies over a range of length‐ and energy scales. Ion implantation is a versatile, scalable, industry‐compatible tool, enabling the next step in this development. Here, we employ ion implantation to design and functionalize a mesoscopic magnetic architecture. We utilize a self‐supporting mask combined with implantation of 60 keV Fe ions to create an embedded array of approximately 8 µm wide circular ferromagnetic regions in a Pd film. The approach is contactless, free from surface residues and requires no focusing or scanning of the beam. Magnetic properties of the array are probed with longitudinal magneto‐optic Kerr effect measurement while varying sample temperature and applied magnetic field. Microstructures are visualized with Kerr microscopy and compared to the Fe distribution measured with microbeam proton induced X‐ray emission. Sample topography after implantation is obtained by atomic force microscopy, while ion beam analysis is employed to probe concentration depth profiles of implanted Fe, impurities and to investigate material mixing.This article is protected by copyright. All rights reserved.
材料的后合成、位置选择性添加特性是材料工程学的一个范式转换步骤。这种方法可以创造出平衡和近平衡合成无法实现的材料系统，并可应用于新颖的实际应用以及一系列长度和能量尺度的基础物理学研究。离子注入是一种多功能、可扩展、与工业兼容的工具，使这一发展迈出了新的一步。在这里，我们采用离子注入技术来设计和功能化介观磁性结构。我们利用自支撑掩模，结合 60 keV 铁离子植入，在钯薄膜中创建了一个宽约 8 µm 的圆形铁磁区域嵌入阵列。这种方法是非接触式的，没有表面残留物，也不需要对光束进行聚焦或扫描。在改变样品温度和外加磁场的同时，利用纵向磁光克尔效应测量法探测阵列的磁特性。利用克尔显微镜观察微结构，并与利用微束质子诱导 X 射线发射测量的铁分布进行比较。植入后的样品形貌由原子力显微镜获得，而离子束分析则用于探测植入的铁、杂质的浓度深度剖面，并研究材料混合情况。本文受版权保护。
{"title":"Position Selective Introduction of Ferromagnetism on the Micro‐ and Nanoscale in a Paramagnetic Thin Palladium Film","authors":"Petter Ström, C. Vantaraki, Rajdeep Kaur, T. Tran, G. Nagy, V. Kapaklis, Daniel Primetzhofer","doi":"10.1002/pssr.202400053","DOIUrl":"https://doi.org/10.1002/pssr.202400053","url":null,"abstract":"Post‐synthetic, position selective addition of properties to materials constitutes a paradigm shifting step in materials engineering. The approach enables creation of material systems inaccessible by equilibrium and near‐equilibrium synthesis, and can be applied in novel practical applications as well as fundamental physics studies over a range of length‐ and energy scales. Ion implantation is a versatile, scalable, industry‐compatible tool, enabling the next step in this development. Here, we employ ion implantation to design and functionalize a mesoscopic magnetic architecture. We utilize a self‐supporting mask combined with implantation of 60 keV Fe ions to create an embedded array of approximately 8 µm wide circular ferromagnetic regions in a Pd film. The approach is contactless, free from surface residues and requires no focusing or scanning of the beam. Magnetic properties of the array are probed with longitudinal magneto‐optic Kerr effect measurement while varying sample temperature and applied magnetic field. Microstructures are visualized with Kerr microscopy and compared to the Fe distribution measured with microbeam proton induced X‐ray emission. Sample topography after implantation is obtained by atomic force microscopy, while ion beam analysis is employed to probe concentration depth profiles of implanted Fe, impurities and to investigate material mixing.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"30 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140365658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.
{"title":"Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field","authors":"Yifei Zhao, Zhongyao Li","doi":"10.1002/pssr.202300496","DOIUrl":"https://doi.org/10.1002/pssr.202300496","url":null,"abstract":"For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"10 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139774549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.
{"title":"Tuning the band gap and topological phase transition in bilayer van der Waals stanane by electric field","authors":"Yifei Zhao, Zhongyao Li","doi":"10.1002/pssr.202300496","DOIUrl":"https://doi.org/10.1002/pssr.202300496","url":null,"abstract":"For a very few special two‐dimensional (2D) materials, electric field can be used to realize the topological phase transition from normal insulator (NI) into topological insulator (TI). To design the low‐power electronic devices based on 2DTIs, tunable and practical 2DTIs may be necessary. Here, we proposed a model of electric‐field‐tunable 2DTIs based on bilayer van der Waals semiconductors. The bilayer semiconductors can be tuned by electric field from NIs into TIs. As a good candidate of the predicted 2DTIs, we studied the possible topological phase transition of bilayer stanane (SnH) under electric field by using first‐principles calculations. The calculations suggest bilayer stanane can be converted from NI into TI by vertical electric field. The topological band gap can be up to about 22.8meV, which is giant for the electric‐field‐tunable 2DTIs. It can be further enlarged by vertical pressure. This discovery provides new possibilities for converting NIs into TIs by electric field and creating multifunctional topological field‐effect transistors by tunable 2DTIs.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"430 13","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139833906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.
{"title":"Improved NH3 Gas Sensing Performance of Femtosecond‐Laser Textured Silicon by the Decoration of Au Nanoparticles","authors":"Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao","doi":"10.1002/pssr.202400015","DOIUrl":"https://doi.org/10.1002/pssr.202400015","url":null,"abstract":"The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"40 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139846751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.
{"title":"Improved NH3 Gas Sensing Performance of Femtosecond‐Laser Textured Silicon by the Decoration of Au Nanoparticles","authors":"Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao","doi":"10.1002/pssr.202400015","DOIUrl":"https://doi.org/10.1002/pssr.202400015","url":null,"abstract":"The escalating environmental concerns have stimulated the demand for NH3 gas sensors, which are indispensable for real‐time data collection in pollution monitoring. To address this need, we design an optimized NH3 sensor based on femtosecond‐laser textured silicon decorated with Au nanoparticles. The morphologies and microstructures of the fabricated samples are characterized by SEM and XRD technologies. The gas‐sensing results demonstrated that the modification of Au nanoparticles significantly enhances the NH3 gas‐sensing performances. Specifically, the sensor based on the textured silicon decorated with Au nanoparticles exhibits a remarkable response of 16.02% toward 20 ppm NH3, which is 4.7 times higher than that of the pristine textured silicon gas sensor at room temperature. In addition, it also demonstrates shortened response and recovery time (26s/98s), showing good selectivity and long‐term availability. The enhanced NH3‐sensing mechanism of the sensor is elucidated, mainly due to the synergistic effect of textured silicon and Au nanoparticles. These contribute to the development of portable, wearable, and intelligent sensor equipment.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":" 18","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139786723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d sub‐sup ) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d sub‐sup exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d sub‐sup can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d sub‐sup substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d sub‐sup can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.
{"title":"Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)‐Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role","authors":"Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang","doi":"10.1002/pssr.202400003","DOIUrl":"https://doi.org/10.1002/pssr.202400003","url":null,"abstract":"In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d\u0000sub‐sup\u0000) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d\u0000sub‐sup\u0000 exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d\u0000sub‐sup\u0000 can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d\u0000sub‐sup\u0000 substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d\u0000sub‐sup\u0000 can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"13 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139851380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d sub‐sup ) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d sub‐sup exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d sub‐sup can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d sub‐sup substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d sub‐sup can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.
{"title":"Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)‐Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role","authors":"Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang","doi":"10.1002/pssr.202400003","DOIUrl":"https://doi.org/10.1002/pssr.202400003","url":null,"abstract":"In this letter, (14,14,14)‐graphyne (GY) supported by silicon substrate is chosen to be research object. Our results demonstrate that the increasing distance between substrate and supported materials (d\u0000sub‐sup\u0000) results in the enhancement of thermal conductivity (TC) of supported GY, and the TC of supported GY is even higher than that of free‐standing GY when d\u0000sub‐sup\u0000 exceeds a certain value, which means substrate plays an abnormal promoting role in the thermal transport in supported materials (SM). This phenomenon breaks the traditional cognition that the increasing d\u0000sub‐sup\u0000 can only lead to the TC of SM approaching that of free‐standing model. The related mechanism can be seen as the combined impact of weak interaction of long‐d\u0000sub‐sup\u0000 substrate and tensile effect led by lattice mismatch between substrate and GY. Combining with phonon analysis, it can be observed that the influence of substrate shows closer relationship with phonon scattering, i.e., the anharmonicity, especially the anharmonicity of out‐of‐plane direction. The anomalous promoting effect of long‐d\u0000sub‐sup\u0000 can be also attributed to the weaker scattering of out‐of‐plane phonon, especially the reduced four‐order phonon scattering. Our research provides a new idea to suppress the negative effect of substrate on heat dissipation in electronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":" 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139791762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.
二维铁电（FE）异质结构因其潜在的器件应用和所涉及的基础物理学而成为近期备受关注的课题。在本研究中，我们采用第一性原理计算来研究二维铁电异质结构（特别是 In2Se3/h-BN 和 CuInP2S6(CIPS)/h-BN 异质结构）中铁电对电子结构的控制。我们的研究结果表明，通过逆转 FE 层的极化，异质结构的能带排列可以在 II 型和 I 型之间相互转换。对于 In2Se3/h-BN，面外极化的变化可归因于 In2Se3 单层的本征电场阻碍和促进了电荷从 h-BN 向 In2Se3 的转移。对于 CIPS/h-BN 异质结构，由于存在内置电场，Cdn 构型中的电荷转移量更高，而且 Cdn 构型中的界面相互作用更强，因此极化值比 Cdn 构型更高。此外，异质结构的载流子迁移率也可以通过 FE 极化得到有效调节。这些发现凸显了具有可调带排列和带隙的 FE 异质结构在开发纳米级光电器件中的潜在意义。本文受版权保护。
{"title":"Ferroelectric Control of Band Alignments in In2Se3/h‐BN and CuInP2S6/h‐BN Van der Waals Heterostructures","authors":"Songmin Liu, Pan Zhou, Pengfei Hou, Lizhong Sun","doi":"10.1002/pssr.202300479","DOIUrl":"https://doi.org/10.1002/pssr.202300479","url":null,"abstract":"Two‐dimensional ferroelectric (FE) heterostructures have recently become a subject of great interest due to their potential device applications and the underlying physics involved. In this study, we employ the first‐principles calculations to examine the FE control of electronic structures in 2D FE heterostructures, specifically In2Se3/h‐BN and CuInP2S6(CIPS)/h‐BN. Our results demonstrate that by reversing the polarization of the FE layers, the band alignment of the heterostructures can be interconverted between type−II and type−I. For In2Se3/h‐BN, the variation of out‐of‐plane polarization can be attributed to the hindrance and facilitation of charge transfer from h‐BN to In2Se3 by the intrinsic electric field of the In2Se3 monolayer. For CIPS/h‐BN heterostructures, the higher transferred charge in the Cdn configuration due to the presence of built‐in electric fields and the stronger interfacial interaction in the Cdn configuration results in a higher polarization value compared to the Cdn configuration. Moreover, the carrier mobility of the heterostructures can also be effectively modulated by the FE polarization. These findings highlight the potential significance of FE heterostructures with tunable band alignment and band gap in the development of nanoscale optoelectronic devices.This article is protected by copyright. All rights reserved.","PeriodicalId":20059,"journal":{"name":"physica status solidi (RRL) – Rapid Research Letters","volume":"265 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139857832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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