Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad770c
Jing Liu, Shanming Li, Yuqing Fan, Chuanpeng Qian, Ke Yang, Ting Yu, Chengchun Zhao, Xiangchun Shi, Yin Hang and Xisheng Ye
An acousto-optic Q-switched Tm:GdScO3 slab laser at different pulse repetition frequencies was successfully demonstrated for the first time. The size of a slab crystal doped with a 2 at% Tm3+ is 2 mm × 4 mm × 20 mm. With the pump power of 33 W, a maximum average output power of 3.03 W was obtained with center wavelength of 1980 nm at pulse repetition frequency of 20 kHz. The optical-to-optical conversion efficiency and slope efficiency were 9.18% and 16.66%, respectively. The maximum pulse energy was 0.60 mJ with pulse width of 160 ns at 1 kHz, corresponding to the peak power of 3.75 kW. In addition, at the pump power of 33 W, the beam quality factors M2 for horizontal and vertical directions were 1.33 and 1.08, respectively.
{"title":"Output characteristics of an actively Q-switched Tm:GdScO3 slab laser at 2 μm band","authors":"Jing Liu, Shanming Li, Yuqing Fan, Chuanpeng Qian, Ke Yang, Ting Yu, Chengchun Zhao, Xiangchun Shi, Yin Hang and Xisheng Ye","doi":"10.1088/1402-4896/ad770c","DOIUrl":"https://doi.org/10.1088/1402-4896/ad770c","url":null,"abstract":"An acousto-optic Q-switched Tm:GdScO3 slab laser at different pulse repetition frequencies was successfully demonstrated for the first time. The size of a slab crystal doped with a 2 at% Tm3+ is 2 mm × 4 mm × 20 mm. With the pump power of 33 W, a maximum average output power of 3.03 W was obtained with center wavelength of 1980 nm at pulse repetition frequency of 20 kHz. The optical-to-optical conversion efficiency and slope efficiency were 9.18% and 16.66%, respectively. The maximum pulse energy was 0.60 mJ with pulse width of 160 ns at 1 kHz, corresponding to the peak power of 3.75 kW. In addition, at the pump power of 33 W, the beam quality factors M2 for horizontal and vertical directions were 1.33 and 1.08, respectively.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"42 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad76e4
Shoujie He, Hong Zhang, Renjie Qi, Jia Zhou, Liu Jia and Qing Li
A rectangular hollow cathode discharge (HCD) in hydrogen with a pressure of 2 Torr is simulated using a 2-D fluid model. The potential, electric field, particle density, and average electron temperature are calculated. The discharge space consists of the cathode sheath region near the cathode electrode and the negative glow (NG) region in the central region of the discharge cell. A high electric field of thousands of V/cm and a low electric field of tens of V/cm appear in the cathode sheath region and NG region, respectively. The average electron temperature in the cathode sheath region is tens of eV, which is significantly higher than that in the NG region. Electrons and H3+ are the main negative particles and positive ions, whose peaks appear in the NG region, and the peak magnitude is on the order of 1010 cm−3. H atom is the highest-density neutral particle other than H2 with a peak density of 1013 cm−3. The reaction kinetics of the generation and consumption of different particles are explored. The results show that each reaction generates certain particles while consuming other particles, ultimately achieving a dynamic equilibrium in the density of various particles. The electrons mainly originate from the ground state ionization between electron and H2 (e+H2 → e+H2++e) and are consumed by the dissociative attachment (e+H2 → H−+H). The charge transfer collision reaction (H2++H2 → H3++H) is the only reaction that produces H3+ ions. Different reactions to the consumption of H3+ ions do not differ significantly. The generation and consumption of H mainly originate from the electron collision dissociation reaction (e+H2 → e+H+H) and the ionization reaction (e+H→H++2e).
{"title":"Simulation on the hollow cathode discharge in hydrogen","authors":"Shoujie He, Hong Zhang, Renjie Qi, Jia Zhou, Liu Jia and Qing Li","doi":"10.1088/1402-4896/ad76e4","DOIUrl":"https://doi.org/10.1088/1402-4896/ad76e4","url":null,"abstract":"A rectangular hollow cathode discharge (HCD) in hydrogen with a pressure of 2 Torr is simulated using a 2-D fluid model. The potential, electric field, particle density, and average electron temperature are calculated. The discharge space consists of the cathode sheath region near the cathode electrode and the negative glow (NG) region in the central region of the discharge cell. A high electric field of thousands of V/cm and a low electric field of tens of V/cm appear in the cathode sheath region and NG region, respectively. The average electron temperature in the cathode sheath region is tens of eV, which is significantly higher than that in the NG region. Electrons and H3+ are the main negative particles and positive ions, whose peaks appear in the NG region, and the peak magnitude is on the order of 1010 cm−3. H atom is the highest-density neutral particle other than H2 with a peak density of 1013 cm−3. The reaction kinetics of the generation and consumption of different particles are explored. The results show that each reaction generates certain particles while consuming other particles, ultimately achieving a dynamic equilibrium in the density of various particles. The electrons mainly originate from the ground state ionization between electron and H2 (e+H2 → e+H2++e) and are consumed by the dissociative attachment (e+H2 → H−+H). The charge transfer collision reaction (H2++H2 → H3++H) is the only reaction that produces H3+ ions. Different reactions to the consumption of H3+ ions do not differ significantly. The generation and consumption of H mainly originate from the electron collision dissociation reaction (e+H2 → e+H+H) and the ionization reaction (e+H→H++2e).","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"2013 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad74b3
Yangyang Li, Yanhong Hu, Chao Zhang, Ying Yuan, Qiang Li and Xiaorui Wang
Near-eye optical systems, as an important component of virtual reality displays, have attracted great research interest recently. However, current systems have complex structures and face the design challenge of combining compact, short-focus design with wide field of view and high angular resolution. In this paper, we propose a short-focus near-eye optical system with wide field of view and high angular resolution, referred to as a meta-eyepiece, by patterning a single-layer polarization-insensitive metasurface on a substrate. The metasurface, featuring a quasi-periodic nanopillar arrangement, enables precise phase modulation and enhances design flexibility. The desired metaform phase can be obtained by modeling the light propagation of the meta-eyepiece to determine key design parameters, utilizing metaform phase polynomials, customizing the objective merit function and employing advanced optimization algorithms. Our system achieves a short focal length of approximately 22 mm with an 80° field of view, offering compactness superior to conventional virtual reality optics and a minimum resolvable angle less than 1.25 arcminutes, ensuring high angular resolution. It also exhibits excellent imaging performance with full-field modulation transfer function values exceeding 0.5 at 62.5 lp/mm. Although the initial system utilizes ray optics, the scaled version is validated for its feasibility and scalability through full-wave simulations. Our meta-eyepiece structure and design method show the potential of metasurfaces for applications in virtual reality, offering valuable support for technological development in this field.
{"title":"Design of short-focus near-eye optical system for virtual reality using polarization-insensitive metasurface","authors":"Yangyang Li, Yanhong Hu, Chao Zhang, Ying Yuan, Qiang Li and Xiaorui Wang","doi":"10.1088/1402-4896/ad74b3","DOIUrl":"https://doi.org/10.1088/1402-4896/ad74b3","url":null,"abstract":"Near-eye optical systems, as an important component of virtual reality displays, have attracted great research interest recently. However, current systems have complex structures and face the design challenge of combining compact, short-focus design with wide field of view and high angular resolution. In this paper, we propose a short-focus near-eye optical system with wide field of view and high angular resolution, referred to as a meta-eyepiece, by patterning a single-layer polarization-insensitive metasurface on a substrate. The metasurface, featuring a quasi-periodic nanopillar arrangement, enables precise phase modulation and enhances design flexibility. The desired metaform phase can be obtained by modeling the light propagation of the meta-eyepiece to determine key design parameters, utilizing metaform phase polynomials, customizing the objective merit function and employing advanced optimization algorithms. Our system achieves a short focal length of approximately 22 mm with an 80° field of view, offering compactness superior to conventional virtual reality optics and a minimum resolvable angle less than 1.25 arcminutes, ensuring high angular resolution. It also exhibits excellent imaging performance with full-field modulation transfer function values exceeding 0.5 at 62.5 lp/mm. Although the initial system utilizes ray optics, the scaled version is validated for its feasibility and scalability through full-wave simulations. Our meta-eyepiece structure and design method show the potential of metasurfaces for applications in virtual reality, offering valuable support for technological development in this field.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"3 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad770b
Hengyue Li, Yusheng Yang, Pin Lv, Jinglong Qu, Zhe-Hui Wang, Jian Sun and Shenggang Ying
This study introduces a systematic approach for analyzing strongly correlated systems by adapting the conventional quantum cluster method to a quantum circuit model. We have developed a more concise formula for calculating the cluster’s Green’s function, requiring only real-number computations on the quantum circuit instead of complex ones. This approach is inherently more suited to quantum circuits, which primarily yield statistical probabilities. As an illustrative example, we explored the Hubbard model on a 2D lattice. The ground state was determined utilizing Xiaohong, a superconducting quantum processor equipped with 66 qubits, supplied by QuantumCTek Co., Ltd. Subsequently, we employed the circuit model with controllable noise to compute the real-time retarded Green’s function for the cluster, which is then used to determine the lattice Green’s function. We conducted an examination of the band structure in the insulator phase of the lattice system. This preliminary investigation lays the groundwork for exploring a wealth of innovative physics within the field of condensed matter physics.
{"title":"Utilizing quantum processor for the analysis of strongly correlated materials","authors":"Hengyue Li, Yusheng Yang, Pin Lv, Jinglong Qu, Zhe-Hui Wang, Jian Sun and Shenggang Ying","doi":"10.1088/1402-4896/ad770b","DOIUrl":"https://doi.org/10.1088/1402-4896/ad770b","url":null,"abstract":"This study introduces a systematic approach for analyzing strongly correlated systems by adapting the conventional quantum cluster method to a quantum circuit model. We have developed a more concise formula for calculating the cluster’s Green’s function, requiring only real-number computations on the quantum circuit instead of complex ones. This approach is inherently more suited to quantum circuits, which primarily yield statistical probabilities. As an illustrative example, we explored the Hubbard model on a 2D lattice. The ground state was determined utilizing Xiaohong, a superconducting quantum processor equipped with 66 qubits, supplied by QuantumCTek Co., Ltd. Subsequently, we employed the circuit model with controllable noise to compute the real-time retarded Green’s function for the cluster, which is then used to determine the lattice Green’s function. We conducted an examination of the band structure in the insulator phase of the lattice system. This preliminary investigation lays the groundwork for exploring a wealth of innovative physics within the field of condensed matter physics.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"2013 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad75c9
L C Gomes, C N Navis, E Moreira and D L Azevedo
The study of belt-shaped nanostructures is one of the areas of interest in the current computational physics scenario. Over the years, many topological structures have been synthesized using a diverse array of techniques. Due to their price and more affordable synthesis, carbon structures are of great interest to the technological industry. Since nanostructures can present different physical characteristics, this paper presents those differences using Möbius carbon nanobelt topology obtained in the appendix of the Nature paper: Synthesis of a Möbius carbon nanobelt Segawa Y, Watanabe T, Yamanoue K, Kuwayama M, Watanabe K, Pirillo J, Hijikata Y and Itami K (2022 Nature Synthesis1 535–541). This investigation using density functional theory (DFT) calculations shows that boron nitride (BN[7,7]), and silicon carbide (SiC[7,7]) nanobelts possess structural stability and the possibility of synthesis. Möbius SiC[7,7] nanobelts behave as semiconductors and absorb in the visible region, while Möbius BN[7,7] nanobelts demonstrate promise as ultraviolet (UV) sensors. Both structures exhibited significant thermal stability during a quantum molecular dynamic simulation. They are capable of withstanding temperatures at least 1500K. It is speculated that the proposed nanobelt molecules could stimulate further experimental investigations into their synthesis and technological applications.
带状纳米结构的研究是当前计算物理学领域的一个热点。多年来，人们利用各种技术合成了许多拓扑结构。由于碳结构价格低廉，合成成本较低，因此受到科技界的极大关注。由于纳米结构可以呈现出不同的物理特性，本文利用《自然》论文附录中获得的莫比乌斯碳纳米带拓扑结构来介绍这些差异：Synthesis of a Möbius carbon nanobelt Segawa Y, Watanabe T, Yamanoue K, Kuwayama M, Watanabe K, Pirillo J, Hijikata Y and Itami K (2022 Nature Synthesis1 535-541)。这项利用密度泛函理论（DFT）计算进行的研究表明，氮化硼（BN[7,7]）和碳化硅（SiC[7,7]）纳米带具有结构稳定性和合成的可能性。莫比乌斯碳化硅[7,7]纳米带表现为半导体并在可见光区域吸收光谱，而莫比乌斯氮化硼[7,7]纳米带则有望成为紫外线（UV）传感器。在量子分子动力学模拟中，这两种结构都表现出明显的热稳定性。它们能够承受至少 1500K 的温度。据推测，所提出的纳米带分子可促进对其合成和技术应用的进一步实验研究。
{"title":"Proposal of molecules in Möbius nanobelt topology","authors":"L C Gomes, C N Navis, E Moreira and D L Azevedo","doi":"10.1088/1402-4896/ad75c9","DOIUrl":"https://doi.org/10.1088/1402-4896/ad75c9","url":null,"abstract":"The study of belt-shaped nanostructures is one of the areas of interest in the current computational physics scenario. Over the years, many topological structures have been synthesized using a diverse array of techniques. Due to their price and more affordable synthesis, carbon structures are of great interest to the technological industry. Since nanostructures can present different physical characteristics, this paper presents those differences using Möbius carbon nanobelt topology obtained in the appendix of the Nature paper: Synthesis of a Möbius carbon nanobelt Segawa Y, Watanabe T, Yamanoue K, Kuwayama M, Watanabe K, Pirillo J, Hijikata Y and Itami K (2022 Nature Synthesis1 535–541). This investigation using density functional theory (DFT) calculations shows that boron nitride (BN[7,7]), and silicon carbide (SiC[7,7]) nanobelts possess structural stability and the possibility of synthesis. Möbius SiC[7,7] nanobelts behave as semiconductors and absorb in the visible region, while Möbius BN[7,7] nanobelts demonstrate promise as ultraviolet (UV) sensors. Both structures exhibited significant thermal stability during a quantum molecular dynamic simulation. They are capable of withstanding temperatures at least 1500K. It is speculated that the proposed nanobelt molecules could stimulate further experimental investigations into their synthesis and technological applications.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"1 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad75cf
Zhengquan Zhou, Weihua Wu, Yu Li and Jiwei Zhai
Radio frequency magnetron sputtering was used to prepare the amorphous GeTe thin films on silicon dioxide and the thickness effects on the crystallization behavior were investigated. With the film thickness reducing, the crystallization temperature, crystallization activation energy, amorphous and crystalline resistance increase remarkably, indicating the great improvement in thermal stability and power consumption. Ozawa’s model was used to estimate the crystallization kinetics of GeTe thin films, it shows that nucleation and grain growth occur simultaneously, and grain growth dominates ultimately. XRD analysis demonstrated that the grain size can be reduced and the crystallization process of GeTe thin film can be inhibited with the film thickness decreasing. Furthermore, the thinner film has smaller resistance drift index and surface roughness, which are beneficial to improve the reliability of storage device. T-type phase change memory devices based on 25 nm GeTe thin film were fabricated by 0.13 μm CMOS technology, and the current–voltage and resistance-voltage characteristics demonstrate the excellent electrical performance, including the fast resistance switching between SET and RESET processes, low threshold current and voltage. All the results proved the strong dependency relationships between the crystallization properties and film thickness of GeTe thin film, which paves the way for developing high-density phase change memory in the fields of big data and artificial intelligence.
{"title":"Thickness dependence and crystallization properties of amorphous GeTe thin films on silicon dioxide","authors":"Zhengquan Zhou, Weihua Wu, Yu Li and Jiwei Zhai","doi":"10.1088/1402-4896/ad75cf","DOIUrl":"https://doi.org/10.1088/1402-4896/ad75cf","url":null,"abstract":"Radio frequency magnetron sputtering was used to prepare the amorphous GeTe thin films on silicon dioxide and the thickness effects on the crystallization behavior were investigated. With the film thickness reducing, the crystallization temperature, crystallization activation energy, amorphous and crystalline resistance increase remarkably, indicating the great improvement in thermal stability and power consumption. Ozawa’s model was used to estimate the crystallization kinetics of GeTe thin films, it shows that nucleation and grain growth occur simultaneously, and grain growth dominates ultimately. XRD analysis demonstrated that the grain size can be reduced and the crystallization process of GeTe thin film can be inhibited with the film thickness decreasing. Furthermore, the thinner film has smaller resistance drift index and surface roughness, which are beneficial to improve the reliability of storage device. T-type phase change memory devices based on 25 nm GeTe thin film were fabricated by 0.13 μm CMOS technology, and the current–voltage and resistance-voltage characteristics demonstrate the excellent electrical performance, including the fast resistance switching between SET and RESET processes, low threshold current and voltage. All the results proved the strong dependency relationships between the crystallization properties and film thickness of GeTe thin film, which paves the way for developing high-density phase change memory in the fields of big data and artificial intelligence.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"5 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad7652
Aniket Banerjee, Pradipta Panchadhyayee and Bibhas Kumar Dutta
We propose a new scheme for high-precision three-dimensional (3D) atom localization by observing the spatially modulated absorption of a weak probe field operating in a partially closed-loop dependent five-level atomic system. Different spatial structures of localization patterns are presented by controlling the Rabi frequency, detuning, and field-induced collective phase-coherence with a variety of superposed standing wave field configurations. Our results highlight that 100% detection probability of atom is possible in the present model in many ways with high precision measurement of spatial absorption. It has been shown that, in the presence of standing wave fields, position information of the atom with maximum detection probability can be efficiently controlled by employing the travelling-wave field in the system. In the present work, we note that the maximum detection probability of the atom is attainable with the limit of spatial resolution better than λ/50. The efficacy of the present model is to find its application in atom nanolithography and atom-imaging having importance in quantum information processing.
{"title":"Efficient control of high-precision three-dimensional atom localization via probe absorption in a five-level phase-coherent atomic system","authors":"Aniket Banerjee, Pradipta Panchadhyayee and Bibhas Kumar Dutta","doi":"10.1088/1402-4896/ad7652","DOIUrl":"https://doi.org/10.1088/1402-4896/ad7652","url":null,"abstract":"We propose a new scheme for high-precision three-dimensional (3D) atom localization by observing the spatially modulated absorption of a weak probe field operating in a partially closed-loop dependent five-level atomic system. Different spatial structures of localization patterns are presented by controlling the Rabi frequency, detuning, and field-induced collective phase-coherence with a variety of superposed standing wave field configurations. Our results highlight that 100% detection probability of atom is possible in the present model in many ways with high precision measurement of spatial absorption. It has been shown that, in the presence of standing wave fields, position information of the atom with maximum detection probability can be efficiently controlled by employing the travelling-wave field in the system. In the present work, we note that the maximum detection probability of the atom is attainable with the limit of spatial resolution better than λ/50. The efficacy of the present model is to find its application in atom nanolithography and atom-imaging having importance in quantum information processing.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"36 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad7654
Navid Yousefi, Ramin Hashemi and Mohammad Sedighi
Fused Deposition Modeling (FDM) is a material-extrusion-based technique used primarily for rapid prototyping and sometimes for an actual servicing part. In the FDM technique, input parent materials are commercial polymers. FDM also has some manufacturing parameters, and the raster pattern significantly affects the mechanical performance of the FDM products. Due to its intrinsic nature, Acrylonitrile Butadiene Styrene (ABS) is widely used in many industries, such as automobiles, medicine, etc. Producing the primitive geometry and selecting the proper infill pattern is challenging. Therefore, the current research paper investigates the effects of various infill patterns on the compressive performance of the three geometries (sphere, 3-side, and 4-side pyramids) printed through the FDM technique out of ABS material. The compressive experiments were conducted on the printed samples and load-displacement curves were evaluated. The results reveal that the concentrate path pattern in the sphere samples has the highest compressive failure load (40127 N). Also, the compressive failure loads in the 3-side and 4-side pyramids fabricated with a 45°/−45° raster pattern are 30444 N and 44396 N, respectively. Finally, comprehensive discussions about the obtained results are stated.
{"title":"Investigation of compressive strength of primitive geometries printed through the fused deposition modeling technique with different path patterns","authors":"Navid Yousefi, Ramin Hashemi and Mohammad Sedighi","doi":"10.1088/1402-4896/ad7654","DOIUrl":"https://doi.org/10.1088/1402-4896/ad7654","url":null,"abstract":"Fused Deposition Modeling (FDM) is a material-extrusion-based technique used primarily for rapid prototyping and sometimes for an actual servicing part. In the FDM technique, input parent materials are commercial polymers. FDM also has some manufacturing parameters, and the raster pattern significantly affects the mechanical performance of the FDM products. Due to its intrinsic nature, Acrylonitrile Butadiene Styrene (ABS) is widely used in many industries, such as automobiles, medicine, etc. Producing the primitive geometry and selecting the proper infill pattern is challenging. Therefore, the current research paper investigates the effects of various infill patterns on the compressive performance of the three geometries (sphere, 3-side, and 4-side pyramids) printed through the FDM technique out of ABS material. The compressive experiments were conducted on the printed samples and load-displacement curves were evaluated. The results reveal that the concentrate path pattern in the sphere samples has the highest compressive failure load (40127 N). Also, the compressive failure loads in the 3-side and 4-side pyramids fabricated with a 45°/−45° raster pattern are 30444 N and 44396 N, respectively. Finally, comprehensive discussions about the obtained results are stated.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"46 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad764d
Yue Wang, Qi-Yuan Wu, Cheng Chen and Lin Miao
The crystal electric field (CEF) is vital in defining the low-energy electronic structure of lanthanide compound, and thus very essential in understanding the many-body physics of the strongly correlated 4 f electrons. Many efforts have been made to determine the low-energy electronic structure of the intrinsically correlated material CeB6 and its derived compounds. In this paper, we performed atomic multiplet (AM) simulations on the Ce-4f1 states in CeB6 and directly fitted them with previously reported resonant inelastic x-ray scattering spectroscopy (RIXS). The simulation results suggest that the discrepancy of excitations energies extracted from Raman spectroscopy and RIXS is a result of intrinsic varied crystal electric field strength, which can be reconciled by considering the enhanced CEF by eliminating the insulating scenario.
晶体电场（CEF）对于确定镧系元素化合物的低能电子结构至关重要，因此对于理解强相关 4 f 电子的多体物理学也非常重要。为了确定本征相关材料 CeB6 及其衍生化合物的低能电子结构，人们做了很多努力。在本文中，我们对 CeB6 中的 Ce-4f1 态进行了原子多次元（AM）模拟，并将其与之前报道的共振非弹性 X 射线散射光谱（RIXS）直接拟合。模拟结果表明，从拉曼光谱和 RIXS 中提取的激发态能量的差异是晶体电场强度内在变化的结果，这可以通过剔除绝缘情况而考虑增强的 CEF 来调和。
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Pub Date : 2024-09-11DOI: 10.1088/1402-4896/ad75d1
M R Villarreal Fasanelli and J Seo
Gravito-electromagnetism is an approximation of general relativity that has significant analogies to electromagnetism. We show that the remained asymmetry in those two field equations and the equations of motion can be alleviated through appropriate scaling on the complex plane, thereby allowing gravity and electromagnetism to be combined into a single set of equations for analysis. This enables a more concise and intuitive interpretation of mixed-field interactions of the interstellar medium. The interstellar medium, composed of ionized gas, interacts with both gravitational and electromagnetic fields, and within this medium, gravitational and electromagnetic waves exist in a coupled form. We derive the dispersion relation of these coupled waves tied by the interstellar medium and discuss two branches of wave solutions. These two solutions correspond to the well-known pure gravitational and electromagnetic waves in the classical limit. Based on the characteristics of this coupled wave, we discuss the possible generation of gravitational waves in the interstellar medium and the abnormal behaviors in a medium composed of dark matter that may provide a new methodology for dark matter detection.
{"title":"Complex electromagnetism and coupled gravitational-electromagnetic waves in the interstellar medium","authors":"M R Villarreal Fasanelli and J Seo","doi":"10.1088/1402-4896/ad75d1","DOIUrl":"https://doi.org/10.1088/1402-4896/ad75d1","url":null,"abstract":"Gravito-electromagnetism is an approximation of general relativity that has significant analogies to electromagnetism. We show that the remained asymmetry in those two field equations and the equations of motion can be alleviated through appropriate scaling on the complex plane, thereby allowing gravity and electromagnetism to be combined into a single set of equations for analysis. This enables a more concise and intuitive interpretation of mixed-field interactions of the interstellar medium. The interstellar medium, composed of ionized gas, interacts with both gravitational and electromagnetic fields, and within this medium, gravitational and electromagnetic waves exist in a coupled form. We derive the dispersion relation of these coupled waves tied by the interstellar medium and discuss two branches of wave solutions. These two solutions correspond to the well-known pure gravitational and electromagnetic waves in the classical limit. Based on the characteristics of this coupled wave, we discuss the possible generation of gravitational waves in the interstellar medium and the abnormal behaviors in a medium composed of dark matter that may provide a new methodology for dark matter detection.","PeriodicalId":20067,"journal":{"name":"Physica Scripta","volume":"147 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142199552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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