Xiaoyang Zhang, Xianjun Zhu, Xueping Zhao, Hai Zhang, Wanghua Chen
This work presents a comprehensive investigation into the synthesis, characterization, and thermal stability of SiGeSn nanowires (NWs) leveraging the vapor–liquid–solid growth mechanism. Utilizing plasma‐enhanced chemical vapor deposition with Sn as the catalyst and a combination of SiH4 and GeH4 as precursors, this research synthesizes tapered SiGeSn NWs of high crystalline quality. Utilizing high‐angle annular dark‐field scanning transmission electron microscopy and energy‐dispersive X‐ray spectroscopy, the study confirms the inhomogeneous distribution of Si, Ge, and Sn along the NWs’ growth axis. It is observed that the concentrations of Si and Ge are significantly influenced by the NW diameter, a phenomenon attributed to the Gibbs–Thomson effect. A straightforward mathematical model is developed. This model examines the impact of the catalyst's shape and the presence of Sn on the NW surface on the internal Sn concentration and its variation along the NWs’ growth axis. Additionally, the study investigates how thermal annealing at temperatures of 300 and 600 °C induces compositional changes within the NWs. These changes are markedly influenced by the heterogeneous distribution of Si, Ge, and Sn elements, leading to varying levels of compositional alterations in different segments of the NWs postannealing at distinct temperatures.
本研究利用气-液-固生长机制，对 SiGeSn 纳米线 (NW) 的合成、表征和热稳定性进行了全面研究。该研究利用等离子体增强化学气相沉积，以Sn为催化剂，结合SiH4和GeH4为前驱体，合成了具有高结晶质量的锥形SiGeSn纳米线。利用高角度环形暗场扫描透射电子显微镜和能量色散 X 射线光谱，研究证实了 Si、Ge 和 Sn 沿 NW 生长轴的不均匀分布。据观察，硅和锗的浓度受 NW 直径的影响很大，这种现象归因于吉布斯-汤姆森效应。我们建立了一个简单明了的数学模型。该模型研究了催化剂的形状和 NW 表面 Sn 的存在对内部 Sn 浓度及其沿 NW 生长轴变化的影响。此外，该研究还探讨了在 300 和 600 °C 温度下进行热退火如何引起 NWs 内部的成分变化。这些变化明显受到硅、锗和锡元素异质分布的影响，导致在不同温度下退火后氮化硼不同区段的成分发生不同程度的变化。
{"title":"Understanding the Thermodynamics of Si and Ge Concentration Variation in SiGeSn Nanowires","authors":"Xiaoyang Zhang, Xianjun Zhu, Xueping Zhao, Hai Zhang, Wanghua Chen","doi":"10.1002/pssa.202400261","DOIUrl":"https://doi.org/10.1002/pssa.202400261","url":null,"abstract":"This work presents a comprehensive investigation into the synthesis, characterization, and thermal stability of SiGeSn nanowires (NWs) leveraging the vapor–liquid–solid growth mechanism. Utilizing plasma‐enhanced chemical vapor deposition with Sn as the catalyst and a combination of SiH<jats:sub>4</jats:sub> and GeH<jats:sub>4</jats:sub> as precursors, this research synthesizes tapered SiGeSn NWs of high crystalline quality. Utilizing high‐angle annular dark‐field scanning transmission electron microscopy and energy‐dispersive X‐ray spectroscopy, the study confirms the inhomogeneous distribution of Si, Ge, and Sn along the NWs’ growth axis. It is observed that the concentrations of Si and Ge are significantly influenced by the NW diameter, a phenomenon attributed to the Gibbs–Thomson effect. A straightforward mathematical model is developed. This model examines the impact of the catalyst's shape and the presence of Sn on the NW surface on the internal Sn concentration and its variation along the NWs’ growth axis. Additionally, the study investigates how thermal annealing at temperatures of 300 and 600 °C induces compositional changes within the NWs. These changes are markedly influenced by the heterogeneous distribution of Si, Ge, and Sn elements, leading to varying levels of compositional alterations in different segments of the NWs postannealing at distinct temperatures.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"9 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Advancements in solar cell research are constantly pushing the boundaries of energy efficiency and sustainability. Kesterite materials have gained attention for their positive environmental impact and are being considered as promising candidate for renewable energy. These materials show potential for improving efficiency through creative structural modifications. Quantum well (QW) solar cells, utilizing kesterite materials, provide a combination of high efficiency, cost‐effectiveness, and environmental sustainability. These materials have a wide range of applications, from residential and commercial solar panels to portable and flexible devices, building‐integrated photovoltaics, off‐grid systems, and even space applications. This study investigates the improvement of solar cell efficiency by incorporating kesterite‐based nanostructures with quantum confinement technology. The key aspects of the analysis are measure performance of solar cell with variation in S/Se mole fraction of CZTSSe absorber layer. The special care is given to analyze behavior of QW structures with CZTSSe as the well material. Additionally, the study is expanded to an analysis of broad range of mole fraction variation in CZTSSe. Finally, the structure is optimized by adjusting the well width. Moreover, a remarkable efficiency of 31.33% is achieved with well width of 20 nm and the mole fraction of 0.8. This finding highlights the importance of customizing composition and nanostructure in solar cell design to improve efficiency and push forward renewable energy technologies.
{"title":"Unlocking the Potential of Kesterite Solar Cells: Quantum Confinement Structures to Pave the Way for High‐Performance Photovoltaic Technologies","authors":"Smruti Ranjan Mohanty, Chandrasekar Palanisamy, Sudarsan Sahoo, Soumyaranjan Rouray","doi":"10.1002/pssa.202400341","DOIUrl":"https://doi.org/10.1002/pssa.202400341","url":null,"abstract":"Advancements in solar cell research are constantly pushing the boundaries of energy efficiency and sustainability. Kesterite materials have gained attention for their positive environmental impact and are being considered as promising candidate for renewable energy. These materials show potential for improving efficiency through creative structural modifications. Quantum well (QW) solar cells, utilizing kesterite materials, provide a combination of high efficiency, cost‐effectiveness, and environmental sustainability. These materials have a wide range of applications, from residential and commercial solar panels to portable and flexible devices, building‐integrated photovoltaics, off‐grid systems, and even space applications. This study investigates the improvement of solar cell efficiency by incorporating kesterite‐based nanostructures with quantum confinement technology. The key aspects of the analysis are measure performance of solar cell with variation in S/Se mole fraction of CZTSSe absorber layer. The special care is given to analyze behavior of QW structures with CZTSSe as the well material. Additionally, the study is expanded to an analysis of broad range of mole fraction variation in CZTSSe. Finally, the structure is optimized by adjusting the well width. Moreover, a remarkable efficiency of 31.33% is achieved with well width of 20 nm and the mole fraction of 0.8. This finding highlights the importance of customizing composition and nanostructure in solar cell design to improve efficiency and push forward renewable energy technologies.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"49 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, a localized surface plasmon resonance‐based sensor for volatile organic compounds (VOCs) detection is developed. The sensors are fabricated as a hybrid nanostructure of gold nanoparticles coated with a tantalum oxide (TaO) thin film on a glass slide substrate through magnetron sputtering and thermal solid‐state dewetting techniques. The thickness of the TaO film varies between 10 and 70 nm. The optical properties of samples are characterized by UV‐Vis‐NIR spectrophotometry, while their morphologies are confirmed via transmission electron microscopy. The results show the shift of the minimum optical transmittance related to the TaO thickness. Electrical field simulations are performed to predict the sensitivity of the prepared samples for VOCs detection. In addition, the sensors are tested with different VOCs, including formaldehyde, isopropanol, acetone, and methanol, which show good potential for practical applications.
{"title":"Hybrid Nanoarchitectronics of Tantalum Oxide‐Coated Gold Nanoparticles as Localized Surface Plasmon Resonance‐Based Sensors for Volatile Organic Compounds Detection","authors":"Kiratikarn Changpradub, Thotsaphon Threrujirapapong, Tossaporn Lertvanithphol, Ratthasart Amarit, Kruawan Wongpanya, Khwanchai Tantiwanichapan, Tuksadon Wutikhun, Annop Klamchuen, Hideki Nakajima, Mati Horprathum","doi":"10.1002/pssa.202400181","DOIUrl":"https://doi.org/10.1002/pssa.202400181","url":null,"abstract":"Herein, a localized surface plasmon resonance‐based sensor for volatile organic compounds (VOCs) detection is developed. The sensors are fabricated as a hybrid nanostructure of gold nanoparticles coated with a tantalum oxide (TaO) thin film on a glass slide substrate through magnetron sputtering and thermal solid‐state dewetting techniques. The thickness of the TaO film varies between 10 and 70 nm. The optical properties of samples are characterized by UV‐Vis‐NIR spectrophotometry, while their morphologies are confirmed via transmission electron microscopy. The results show the shift of the minimum optical transmittance related to the TaO thickness. Electrical field simulations are performed to predict the sensitivity of the prepared samples for VOCs detection. In addition, the sensors are tested with different VOCs, including formaldehyde, isopropanol, acetone, and methanol, which show good potential for practical applications.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"10 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Oleg Stognei, Andrey Smirnov, Alexander Sitnikov, Mikhail Volochaev
Thermal stability of the multilayer (Mg/NbOx)82 nanostructure and the effect of heat treatment on its electrical properties and phase composition depending on the bilayer thickness are studied. The studied (Mg/NbOx)82 samples contain 82 bilayers whose thickness varies in the range from 2.2 to 6.2 nm. The NbOx layer thickness in the multilayers is the same (0.96 nm) in all samples, while the magnesium layers thickness is varied. It is established that the magnesium layers are either discrete (a set of nanosized particles) or continuous depending on their thickness. A metallothermic reaction occurs in (Mg/NbOx)82 multilayer nanostructures at a temperature of 430 °C: niobium oxide decomposes and the released oxygen partly oxidizes the magnesium layers. That leads to the conductive magnesium metal layers breaking and to the sharp increase of the nanostructures’ resistance by more than two orders. Despite the metallothermic reaction, the layering of the (Mg/NbOx)82 nanostructures as a whole and the presence of unoxidized magnesium inclusions remain even after heating up to 450 °C.
研究了多层（Mg/NbOx）82 纳米结构的热稳定性以及热处理对其电性能和相组成的影响（取决于双层厚度）。所研究的（Mg/NbOx）82 样品包含 82 层双层膜，其厚度范围在 2.2 至 6.2 纳米之间。在所有样品中，多层中氧化铌层的厚度相同（0.96 nm），而镁层的厚度则各不相同。根据厚度的不同，镁层可以是离散的（一组纳米颗粒），也可以是连续的。(Mg/NbOx)82 多层纳米结构在 430 °C 的温度下发生了金属热反应：氧化铌分解，释放出的氧气部分氧化了镁层。这导致导电镁金属层断裂，纳米结构的电阻急剧增加了两个数量级以上。尽管发生了金属热反应，但 (Mg/NbOx)82 纳米结构的整体分层和未氧化镁夹杂物的存在在加热至 450 °C 后依然存在。
{"title":"Thermal Stability of (Mg/NbOx)82 Multilayer Nanostructure","authors":"Oleg Stognei, Andrey Smirnov, Alexander Sitnikov, Mikhail Volochaev","doi":"10.1002/pssa.202400244","DOIUrl":"https://doi.org/10.1002/pssa.202400244","url":null,"abstract":"Thermal stability of the multilayer (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> nanostructure and the effect of heat treatment on its electrical properties and phase composition depending on the bilayer thickness are studied. The studied (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> samples contain 82 bilayers whose thickness varies in the range from 2.2 to 6.2 nm. The NbO<jats:sub><jats:italic>x</jats:italic></jats:sub> layer thickness in the multilayers is the same (0.96 nm) in all samples, while the magnesium layers thickness is varied. It is established that the magnesium layers are either discrete (a set of nanosized particles) or continuous depending on their thickness. A metallothermic reaction occurs in (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> multilayer nanostructures at a temperature of 430 °C: niobium oxide decomposes and the released oxygen partly oxidizes the magnesium layers. That leads to the conductive magnesium metal layers breaking and to the sharp increase of the nanostructures’ resistance by more than two orders. Despite the metallothermic reaction, the layering of the (Mg/NbO<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>82</jats:sub> nanostructures as a whole and the presence of unoxidized magnesium inclusions remain even after heating up to 450 °C.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"13 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A p–n heterojunction diode is fabricated using a p‐type 4‐amino‐2‐methylquinoline (C10H10N2) on an n‐type ZnO film and its structural, optical, and electrical properties are investigated. First, a ZnO thin film is prepared on an ITO substrate by spin coating. Subsequently, this ZnO film is coated with a C10H10N2 film using the same method. X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–vis spectroscopy, and current–voltage measurements are carried out on the prepared films. According to the XRD result, sharp peaks at 320.081, 340.488, and 360.548 are observed in the hexagonal phase of ZnO. At these angles, grain sizes of 15.308, 15.179, and 13.715 nm are calculated. The absorption peaks of electronic transitions π→π*, n→π*, and d→d* in the ZnO/C10H10N2 heterojunction film are observed. From the IV diagram, it can be seen that the heterojunction structure has a diode characteristic. From the IV data, the rectification factor is calculated to be 6.59 and its graph is drawn. With the Cheung method, ideality factor (n) = 2.87, series resistance (RS) = 1 MΩ, and shunt resistance (RSh) = 5 kΩ are found.
在 n 型氧化锌薄膜上使用 p 型 4-氨基-2-甲基喹啉 (C10H10N2) 制作了 p-n 异质结二极管，并对其结构、光学和电学特性进行了研究。首先，通过旋涂法在 ITO 基底上制备氧化锌薄膜。随后，用同样的方法在 ZnO 薄膜上镀上一层 C10H10N2 薄膜。对制备的薄膜进行了 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、原子力显微镜 (AFM)、紫外可见光谱和电流电压测量。X 射线衍射结果显示，氧化锌的六方相在 320.081、340.488 和 360.548 处出现了尖锐的峰值。按这些角度计算，晶粒大小分别为 15.308、15.179 和 13.715 nm。在 ZnO/C10H10N2 异质结薄膜中观察到电子跃迁 π→π*、n→π* 和 d→d* 的吸收峰。从 IV 图可以看出，异质结结构具有二极管特性。根据 IV 数据，计算出整流因子为 6.59，并绘制了整流因子图。根据 Cheung 方法，可求得理想化系数 (n) = 2.87，串联电阻 (RS) = 1 MΩ，并联电阻 (RSh) = 5 kΩ。
{"title":"Investigation of the Structural, Optical, and Electrical Properties of ZnO/4‐Amino‐2‐Methylquinoline p–n Heterojunction by Spin‐Coating Method","authors":"Ramazan Demir","doi":"10.1002/pssa.202400507","DOIUrl":"https://doi.org/10.1002/pssa.202400507","url":null,"abstract":"A p–n heterojunction diode is fabricated using a p‐type 4‐amino‐2‐methylquinoline (C<jats:sub>10</jats:sub>H<jats:sub>10</jats:sub>N<jats:sub>2</jats:sub>) on an n‐type ZnO film and its structural, optical, and electrical properties are investigated. First, a ZnO thin film is prepared on an ITO substrate by spin coating. Subsequently, this ZnO film is coated with a C<jats:sub>10</jats:sub>H<jats:sub>10</jats:sub>N<jats:sub>2</jats:sub> film using the same method. X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV–vis spectroscopy, and current–voltage measurements are carried out on the prepared films. According to the XRD result, sharp peaks at 320.081, 340.488, and 360.548 are observed in the hexagonal phase of ZnO. At these angles, grain sizes of 15.308, 15.179, and 13.715 nm are calculated. The absorption peaks of electronic transitions <jats:italic>π</jats:italic>→<jats:italic>π</jats:italic>*, <jats:italic>n</jats:italic>→<jats:italic>π</jats:italic>*, and <jats:italic>d</jats:italic>→<jats:italic>d</jats:italic>* in the ZnO/C<jats:sub>10</jats:sub>H<jats:sub>10</jats:sub>N<jats:sub>2</jats:sub> heterojunction film are observed. From the IV diagram, it can be seen that the heterojunction structure has a diode characteristic. From the IV data, the rectification factor is calculated to be 6.59 and its graph is drawn. With the Cheung method, ideality factor (<jats:italic>n</jats:italic>) = 2.87, series resistance (<jats:italic>R</jats:italic><jats:sub>S</jats:sub>) = 1 MΩ, and shunt resistance (<jats:italic>R</jats:italic><jats:sub>Sh</jats:sub>) = 5 kΩ are found.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A study on the bias‐dependent spectral responsivity of back‐illuminated p–i–n AlGaN UV photodetectors with different p‐AlGaN layer thicknesses is investigated. The results reveal an anomalous reduction in peak responsivity under zero bias when the p‐AlGaN layer thickness is relatively thin. Further investigations indicate that this anomaly can be attributed to the additional Schottky junction formed between the p‐AlGaN layer and metal. The quality and thickness design of the p‐AlGaN layer play a crucial role in enhancing the performance of back‐illuminated p–i–n AlGaN solar‐blind photodetectors.
{"title":"Mechanisms Affecting the Anomalous Responsivity of Back‐Illuminated p–i–n AlGaN Solar‐Blind Photodetectors","authors":"Zhaolan Sun, Jing Yang, Bing Liu, Zongshun Liu, Lihong Duan, Feng Liang, Fu Zheng, Xuefeng Liu, Degang Zhao","doi":"10.1002/pssa.202400417","DOIUrl":"https://doi.org/10.1002/pssa.202400417","url":null,"abstract":"A study on the bias‐dependent spectral responsivity of back‐illuminated p–i–n AlGaN UV photodetectors with different p‐AlGaN layer thicknesses is investigated. The results reveal an anomalous reduction in peak responsivity under zero bias when the p‐AlGaN layer thickness is relatively thin. Further investigations indicate that this anomaly can be attributed to the additional Schottky junction formed between the p‐AlGaN layer and metal. The quality and thickness design of the p‐AlGaN layer play a crucial role in enhancing the performance of back‐illuminated p–i–n AlGaN solar‐blind photodetectors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"40 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Alisha Mary Manoj, Kavithanjali Madeshwaran, Mahalakshmi V, Kuraganti Vasu, Usha Rani M, Boopalan G, Leema Rose Viannie
In this study, the synthesis, followed by a detailed evaluation of the structural, optical, and electrical properties of the N‐ZnO/N‐rGO nanocomposite prepared using a one‐step low‐temperature hydrothermal process, is reported. By employing N, N‐dimethylformamide (DMF) as the reducing agent and urea as the nitrogen precursor, simultaneous reduction and nitrogen doping are achieved in the nanocomposite. X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), and Raman measurements are used for the structural evaluation. The formation of composites is verified using the ZnC/ZnOC bonds in the XPS. The nitrogen doping in the nanocomposites varies from 0.8% to 1.8%. The major nitrogen moieties observed here include pyrrolic N, pyridinic N, and graphitic N. The electrical response is measured using current–voltage characteristics, and enhanced conductivity was observed in the sample with the highest percentage of pyrrolic N. This is attributed to the superior electron transport mechanism of pyrrolic N in the graphene structure. The current response is found to increase from 2 to 10 μA from ZnO/rGO to N‐ZnO/N‐rGO nanocomposite. The integration of N‐rGO support with extensively doped pyrrolic end groups for the N‐ZnO nanoparticles has been found to improve the conduction mechanism and is hence promising for many applications.
{"title":"Synergic Effects of Chemical Reduction and Nitrogen Doping on the Structural and Electrical Properties of N‐ZnO/N‐rGO Nanostructures","authors":"Alisha Mary Manoj, Kavithanjali Madeshwaran, Mahalakshmi V, Kuraganti Vasu, Usha Rani M, Boopalan G, Leema Rose Viannie","doi":"10.1002/pssa.202400424","DOIUrl":"https://doi.org/10.1002/pssa.202400424","url":null,"abstract":"In this study, the synthesis, followed by a detailed evaluation of the structural, optical, and electrical properties of the N‐ZnO/N‐rGO nanocomposite prepared using a one‐step low‐temperature hydrothermal process, is reported. By employing N, N‐dimethylformamide (DMF) as the reducing agent and urea as the nitrogen precursor, simultaneous reduction and nitrogen doping are achieved in the nanocomposite. X‐ray diffraction (XRD), X‐ray photoelectron spectroscopy (XPS), and Raman measurements are used for the structural evaluation. The formation of composites is verified using the ZnC/ZnOC bonds in the XPS. The nitrogen doping in the nanocomposites varies from 0.8% to 1.8%. The major nitrogen moieties observed here include pyrrolic N, pyridinic N, and graphitic N. The electrical response is measured using current–voltage characteristics, and enhanced conductivity was observed in the sample with the highest percentage of pyrrolic N. This is attributed to the superior electron transport mechanism of pyrrolic N in the graphene structure. The current response is found to increase from 2 to 10 μA from ZnO/rGO to N‐ZnO/N‐rGO nanocomposite. The integration of N‐rGO support with extensively doped pyrrolic end groups for the N‐ZnO nanoparticles has been found to improve the conduction mechanism and is hence promising for many applications.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article investigates in situ TiC particle‐reinforcement Al–Si–Fe matrix composites prepared by the contact reaction method. The addition of Ti–C to alloys results in the formation of β‐Fe and significantly refined the eutectic Si phase. Meanwhile, the exothermic reaction of C accelerates generation velocity of TiC. The refinement of the Al3Ti phase is attributed to refinement of α‐Al, which expedites solidification speed and prevents the further diffusion of Si atom, resulting in the bulk of the primary Si phase is formed locally. The best refinement effect of microstructure is obtained when the mixing powder addition content is 1.0 wt% and the Al‐12Si‐1Fe alloy has maximum tensile strength. The appearance of TiC is regarded as underlying reason for the re‐enhancement of mechanical properties.
本文研究了通过接触反应法制备的原位 TiC 粒子增强 Al-Si-Fe 基复合材料。在合金中加入 TiC 会形成 β-Fe，并显著改善共晶 Si 相。同时，C 的放热反应加快了 TiC 的生成速度。Al3Ti 相的细化归因于 α-Al 的细化，α-Al 的细化加快了凝固速度，阻止了 Si 原子的进一步扩散，从而在局部形成了大量的原生 Si 相。当混合粉添加量为 1.0 wt% 时，微观结构的细化效果最佳，Al-12Si-1Fe 合金的抗拉强度最大。TiC 的出现被认为是机械性能重新提高的根本原因。
{"title":"Microstructures and Mechanical Properties of TiC/Al–Si–Fe Composite with Ti–C Powder Mixture Prepared by Contact Reaction Method","authors":"Peixin Xiao, Peng Tang, Li Li","doi":"10.1002/pssa.202400533","DOIUrl":"https://doi.org/10.1002/pssa.202400533","url":null,"abstract":"This article investigates in situ TiC particle‐reinforcement Al–Si–Fe matrix composites prepared by the contact reaction method. The addition of Ti–C to alloys results in the formation of β‐Fe and significantly refined the eutectic Si phase. Meanwhile, the exothermic reaction of C accelerates generation velocity of TiC. The refinement of the Al<jats:sub>3</jats:sub>Ti phase is attributed to refinement of α‐Al, which expedites solidification speed and prevents the further diffusion of Si atom, resulting in the bulk of the primary Si phase is formed locally. The best refinement effect of microstructure is obtained when the mixing powder addition content is 1.0 wt% and the Al‐12Si‐1Fe alloy has maximum tensile strength. The appearance of TiC is regarded as underlying reason for the re‐enhancement of mechanical properties.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"135 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new wafer warpage model is proposed for the full process design of trench field‐plate (FP) power metal‐oxide‐semiconductor fileld‐effect transitors (MOSFETs) using large‐sized wafer. Trench FP power MOSFETs feature a deep trench and thick oxide at the wafer surface. Wafer warpage occurs due to the stress imbalance between the front and back sides of the wafer. This warpage leads to significant problems with transport errors in manufacturing equipment. This issue is expected to become even more crucial as lateral pitch narrowing is employed to reduce on‐resistance. In this study, two methods are compared to estimate the warpage of a 200 mm diameter Si‐wafer after trench etching and oxidation process. The mechanical stress generated by the oxidation process in several cell units is calculated using a 3D simulation. In the first approach, wafer warpage is converted from the displacement of the cell units. In the second approach, wafer warpage is estimated based on the surface film stress, which is calculated in the 3D simulation. The second approach shows good agreement with experimental results and is applicable to the 300 mm diameter Si process. This method yields more accurate measurements than the method using displacement.
{"title":"A Model of Wafer Warpage for Trench Field‐Plate Power MOSFETs","authors":"Hiroaki Kato, Bozhou Cai, Jiuyang Yuan, Yoshiji Miyamura, Shin‐ichi Nishizawa, Wataru Saito","doi":"10.1002/pssa.202400264","DOIUrl":"https://doi.org/10.1002/pssa.202400264","url":null,"abstract":"A new wafer warpage model is proposed for the full process design of trench field‐plate (FP) power metal‐oxide‐semiconductor fileld‐effect transitors (MOSFETs) using large‐sized wafer. Trench FP power MOSFETs feature a deep trench and thick oxide at the wafer surface. Wafer warpage occurs due to the stress imbalance between the front and back sides of the wafer. This warpage leads to significant problems with transport errors in manufacturing equipment. This issue is expected to become even more crucial as lateral pitch narrowing is employed to reduce on‐resistance. In this study, two methods are compared to estimate the warpage of a 200 mm diameter Si‐wafer after trench etching and oxidation process. The mechanical stress generated by the oxidation process in several cell units is calculated using a 3D simulation. In the first approach, wafer warpage is converted from the displacement of the cell units. In the second approach, wafer warpage is estimated based on the surface film stress, which is calculated in the 3D simulation. The second approach shows good agreement with experimental results and is applicable to the 300 mm diameter Si process. This method yields more accurate measurements than the method using displacement.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"75 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jinhai Yang, Yanhong Ye, Ruiyang Yu, Han Yang, Hui Qiao, Zongyu Huang, Xiang Qi
Bi2Se3 has a unique surface state and excellent electron transport performance, but because of its narrow band gap, Bi2Se3‐based photodetectors are difficult to achieve high response to ultraviolet (UV) light. In this paper, the TiO2/Bi2Se3 heterostructure was constructed by spin‐coating TiO2 on Bi2Se3 film, and TiO2/Bi2Se3 heterostructure‐based photoelectrochemical (PEC) photodetector was constructed, and a series of measurements were carried out. The measure results showed that the photoresponse performance of TiO2/Bi2Se3 heterostructure‐based photodetector was improved in the visible region, and the performance in the UV was further improved. This is because the type ii band alignment between TiO2 and Bi2Se3 is beneficial for the effective separation and transfer of photogenerated electron‐hole pairs, reducing recombination losses and enhancing the overall photoresponse. In addition, under the action of the built‐in electric field formed by the heterostructure, the photogenerated electrons and holes are easier to separate, which reduces the recombination probability of the photogenerated electron‐hole pair and improves the photoelectric conversion efficiency. In the UV, TiO2/Bi2Se3 heterostructure can make more efficient use of the light absorption characteristics of TiO2 and absorb more photons, resulting in a larger photocurrent. These results indicate that TiO2/Bi2Se3 heterostructure‐based photodetector has great application potential in the UV.
{"title":"Enhanced UV Photoresponse Performances of TiO2/Bi2Se3 Heterostructure‐Based Photoelectrochemical Photodetector","authors":"Jinhai Yang, Yanhong Ye, Ruiyang Yu, Han Yang, Hui Qiao, Zongyu Huang, Xiang Qi","doi":"10.1002/pssa.202400522","DOIUrl":"https://doi.org/10.1002/pssa.202400522","url":null,"abstract":"Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> has a unique surface state and excellent electron transport performance, but because of its narrow band gap, Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub>‐based photodetectors are difficult to achieve high response to ultraviolet (UV) light. In this paper, the TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure was constructed by spin‐coating TiO<jats:sub>2</jats:sub> on Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> film, and TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure‐based photoelectrochemical (PEC) photodetector was constructed, and a series of measurements were carried out. The measure results showed that the photoresponse performance of TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure‐based photodetector was improved in the visible region, and the performance in the UV was further improved. This is because the type ii band alignment between TiO<jats:sub>2</jats:sub> and Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> is beneficial for the effective separation and transfer of photogenerated electron‐hole pairs, reducing recombination losses and enhancing the overall photoresponse. In addition, under the action of the built‐in electric field formed by the heterostructure, the photogenerated electrons and holes are easier to separate, which reduces the recombination probability of the photogenerated electron‐hole pair and improves the photoelectric conversion efficiency. In the UV, TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure can make more efficient use of the light absorption characteristics of TiO<jats:sub>2</jats:sub> and absorb more photons, resulting in a larger photocurrent. These results indicate that TiO<jats:sub>2</jats:sub>/Bi<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> heterostructure‐based photodetector has great application potential in the UV.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"9 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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