This study aims to produce cadmium selenium (CdSe) thin films with a hexagonal structure using the chemical bath deposition (CBD) method. In this study, 0.075 g of cadmium chloride (CdCl2) is used as a Cd source, 0.06 g of etilendiamin tetra acetic acid [(EDTA), (C10H16N2O8)] as a complexing agent, and 0.1 g of selenourea [CSe(NH2)2] as a selenium source. Ammonia (NH3) is employed to adjust the pH value of the solutions and varying amounts of Na2SO3 (from 0.1 to 1.6 g) are used as a reducing agent. This chemical combination has been used for the first time to produce CdSe thin films. X‐ray diffraction (XRD) results confirm that CdSe thin films exhibit a hexagonal structure without requiring annealing. The energy band gap values calculated via absorption graphs range from 1.76 to 1.91 eV. The surface morphologies are examined using scanning electron microscope (SEM) images. SEM images show that there are no voids, cracks, or pinholes. The software named ImageJ is used to determine surface roughness, showing range from 6 to 8 nm. The photographs of the samples show that some films adhere homogeneously to the surfaces of substrates, depending on the amount of Na2SO3 used.
{"title":"A New Approach in Chemical Bath Deposition of Cadmium Selenium Thin Films","authors":"Metehan Önal, Barış Altiokka","doi":"10.1002/pssa.202400268","DOIUrl":"https://doi.org/10.1002/pssa.202400268","url":null,"abstract":"This study aims to produce cadmium selenium (CdSe) thin films with a hexagonal structure using the chemical bath deposition (CBD) method. In this study, 0.075 g of cadmium chloride (CdCl<jats:sub>2</jats:sub>) is used as a Cd source, 0.06 g of etilendiamin tetra acetic acid [(EDTA), (C<jats:sub>10</jats:sub>H<jats:sub>16</jats:sub>N<jats:sub>2</jats:sub>O<jats:sub>8</jats:sub>)] as a complexing agent, and 0.1 g of selenourea [CSe(NH<jats:sub>2</jats:sub>)<jats:sub>2</jats:sub>] as a selenium source. Ammonia (NH<jats:sub>3</jats:sub>) is employed to adjust the pH value of the solutions and varying amounts of Na<jats:sub>2</jats:sub>SO<jats:sub>3</jats:sub> (from 0.1 to 1.6 g) are used as a reducing agent. This chemical combination has been used for the first time to produce CdSe thin films. X‐ray diffraction (XRD) results confirm that CdSe thin films exhibit a hexagonal structure without requiring annealing. The energy band gap values calculated via absorption graphs range from 1.76 to 1.91 eV. The surface morphologies are examined using scanning electron microscope (SEM) images. SEM images show that there are no voids, cracks, or pinholes. The software named ImageJ is used to determine surface roughness, showing range from 6 to 8 nm. The photographs of the samples show that some films adhere homogeneously to the surfaces of substrates, depending on the amount of Na<jats:sub>2</jats:sub>SO<jats:sub>3</jats:sub> used.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"3 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ramprasad B. Sonpir, Dnayneshwar V. Dake, Nita D. Raskar, Vijay A. Mane, Sanjana S. Shinde, Shailaja S. Ingole, Manisha S. Tak, Babasaheb N. Dole
The simple and cost‐effective co‐precipitation method is used for the synthesis of pure Co3O4 and 5% Sn‐doped Co3O4 nanoflakes. Crystallographic parameters, chemical composition, morphological properties, optical properties, and surface area are analyzed using X‐ray diffraction data (XRD), Fourier transform infrared spectroscopy (FT‐IR), Raman analysis, UV–vis, field emission scanning microscopy, energy‐dispersive X‐ray analysis, and Brunauer–Emmett–Teller (BET), respectively. By using cyclic voltammetry and electrochemical impedance spectroscopy in a 2 m KOH electrolyte, the electrochemical characteristics of both pure and 5% Sn‐doped Co3O4 are verified. The sample results show that the presence of Sn2+ has an impact on surface area, band gap, specific capacitance, and electrochemical performance of Co3O4. According to XRD data, synthetic material has a cubic structure. The surface area of the sample is scrutinized using BET which exhibits a higher surface area of 1084.998 m2 g−1 than pure Co3O4 (92.842 m2 g−1) demonstrating that enhancement in surface area as dopant concentration increases. It is observed that porous 5% Sn‐doped Co3O4 nanoflakes has the higher specific capacitance, i.e., 203.6 F g−1 with a high surface area. It is well noticed that drastic change in specific capacitance with 5% Sn doping. These observations and experiments reveal that designed electrode is a promising candidate for supercapacitor application.
采用简单、经济的共沉淀法合成了纯 Co3O4 和 5% 掺杂 Sn 的 Co3O4 纳米片。分别利用 X 射线衍射数据（XRD）、傅立叶变换红外光谱（FT-IR）、拉曼分析、紫外-可见光、场发射扫描显微镜、能量色散 X 射线分析和布鲁纳-埃美特-泰勒（BET）分析了晶体学参数、化学成分、形态特性、光学特性和表面积。通过在 2 m KOH 电解液中使用循环伏安法和电化学阻抗光谱法，验证了纯 Co3O4 和 5% 掺杂 Sn Co3O4 的电化学特性。样品结果表明，Sn2+ 的存在对 Co3O4 的表面积、带隙、比电容和电化学性能都有影响。根据 XRD 数据，合成材料具有立方结构。利用 BET 对样品的表面积进行了仔细研究，结果显示其表面积为 1084.998 m2 g-1，高于纯 Co3O4（92.842 m2 g-1），这表明随着掺杂浓度的增加，表面积也在增加。据观察，掺杂 5%锡的多孔 Co3O4 纳米薄片具有较高的比电容，即 203.6 F g-1，同时具有较高的表面积。我们还注意到，掺杂 5% 锡的比电容发生了急剧变化。这些观察和实验结果表明，所设计的电极是超级电容器应用的理想候选材料。
{"title":"Effect of Enhancement in Surface Area of Sn‐Doped Cobalt Oxide Nanoflakes for Supercapacitor Application","authors":"Ramprasad B. Sonpir, Dnayneshwar V. Dake, Nita D. Raskar, Vijay A. Mane, Sanjana S. Shinde, Shailaja S. Ingole, Manisha S. Tak, Babasaheb N. Dole","doi":"10.1002/pssa.202400502","DOIUrl":"https://doi.org/10.1002/pssa.202400502","url":null,"abstract":"The simple and cost‐effective co‐precipitation method is used for the synthesis of pure Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> and 5% Sn‐doped Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> nanoflakes. Crystallographic parameters, chemical composition, morphological properties, optical properties, and surface area are analyzed using X‐ray diffraction data (XRD), Fourier transform infrared spectroscopy (FT‐IR), Raman analysis, UV–vis, field emission scanning microscopy, energy‐dispersive X‐ray analysis, and Brunauer–Emmett–Teller (BET), respectively. By using cyclic voltammetry and electrochemical impedance spectroscopy in a 2 <jats:sc>m</jats:sc> KOH electrolyte, the electrochemical characteristics of both pure and 5% Sn‐doped Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> are verified. The sample results show that the presence of Sn<jats:sup>2+</jats:sup> has an impact on surface area, band gap, specific capacitance, and electrochemical performance of Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub>. According to XRD data, synthetic material has a cubic structure. The surface area of the sample is scrutinized using BET which exhibits a higher surface area of 1084.998 m<jats:sup>2</jats:sup> g<jats:sup>−1</jats:sup> than pure Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> (92.842 m<jats:sup>2</jats:sup> g<jats:sup>−1</jats:sup>) demonstrating that enhancement in surface area as dopant concentration increases. It is observed that porous 5% Sn‐doped Co<jats:sub>3</jats:sub>O<jats:sub>4</jats:sub> nanoflakes has the higher specific capacitance, i.e., 203.6 F g<jats:sup>−1</jats:sup> with a high surface area. It is well noticed that drastic change in specific capacitance with 5% Sn doping. These observations and experiments reveal that designed electrode is a promising candidate for supercapacitor application.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"24 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A piezoelectric‐electromagnetic composite energy harvester (PECEH) has been designed, to mainly study the relationship between the length and angle of piezoelectric cantilever beams and their power generation performance, and the analysis of dynamic models in magnetic levitation systems and the impact of magnet size on power generation performance. In this device, piezoelectric energy harvester (PEH) and electromagnetic harvester (EMH) are used as powered and sensing, respectively. The PEH collects vibration to generate electricity and supplies energy to the EMH, which then transmits the wireless signal. EMH adopts a magnetic levitation device with higher sensitivity, while PEH uses a direct contact strike piezoelectric plate to increase power generation. The paddles are made of flexible materials, which increase the durability of the device. The prototype was tested at different excitation frequencies. Research has shown that at a frequency of 1.4 Hz, the optimal voltage and power are 126.28, 4.04 V, and 4.9 mW and 0.57 μW. 60 light emitting diode can be lit when pedestrians are walking. Therefore, PECEH can be used to collect the vibration energy of pedestrians while walking, providing power to sensors and microstructure.
{"title":"A Piezoelectric Electromagnetic Composite Energy Harvester for Collecting Pedestrian Walking Energy","authors":"Linqiang Feng, Chensheng Wang, Jingwei Yang, Zhenheng Li, Jing Li, Lipeng He","doi":"10.1002/pssa.202400311","DOIUrl":"https://doi.org/10.1002/pssa.202400311","url":null,"abstract":"A piezoelectric‐electromagnetic composite energy harvester (PECEH) has been designed, to mainly study the relationship between the length and angle of piezoelectric cantilever beams and their power generation performance, and the analysis of dynamic models in magnetic levitation systems and the impact of magnet size on power generation performance. In this device, piezoelectric energy harvester (PEH) and electromagnetic harvester (EMH) are used as powered and sensing, respectively. The PEH collects vibration to generate electricity and supplies energy to the EMH, which then transmits the wireless signal. EMH adopts a magnetic levitation device with higher sensitivity, while PEH uses a direct contact strike piezoelectric plate to increase power generation. The paddles are made of flexible materials, which increase the durability of the device. The prototype was tested at different excitation frequencies. Research has shown that at a frequency of 1.4 Hz, the optimal voltage and power are 126.28, 4.04 V, and 4.9 mW and 0.57 μW. 60 light emitting diode can be lit when pedestrians are walking. Therefore, PECEH can be used to collect the vibration energy of pedestrians while walking, providing power to sensors and microstructure.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"395 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work focuses on the study of the microstructure and magnetic properties of nanocrystalline powders of Sm4ZrFe33, prepared by high‐energy ball milling. The Sm4ZrFe33 compound adopts a monoclinic structure (space group Cm). Upon annealing, these Sm4ZrFe33 samples exhibit notable variations in their extrinsic magnetic properties, closely linked to temperature fluctuations. The investigation delves into the correlation between morphology, grain size and magnetic characteristics. A significant enhancement in coercivity (Hc), remanent magnetization (Mr), and maximum energy product ((BH)max) is observed, primarily attributed to the finer grain structure present in the samples. Particularly noteworthy, among all annealed specimens, the nanocrystalline Sm4ZrFe33 compound annealed at a temperature of Ta = 973 K demonstrates the most promising magnetic properties. This specimen exhibits a coercivity Hc of 18 500 Oe, remanent magnetization (Mr) of 58 emu g−1, maximum energy product ((BH)max) of 5.18 MGOe, Curie temperature (TC) of ≈804 K, and magnetic anisotropy field (Ha) of 115 980 Oe. These research findings pave the way for future investigations and applications in the realm of permanent magnets, spintronic devices, and magnetic recording, utilizing nanocrystalline alloys based on the Sm4ZrFe33 compound.
这项工作的重点是研究通过高能球磨法制备的 Sm4ZrFe33 纳米晶粉末的微观结构和磁性能。Sm4ZrFe33 复合物采用单斜结构（空间群 Cm）。退火后，这些 Sm4ZrFe33 样品的外磁性能会出现明显变化，这与温度波动密切相关。研究深入探讨了形态、晶粒大小和磁性特征之间的相关性。观察到矫顽力（Hc）、剩磁（Mr）和最大能积（(BH)max）明显增强，这主要归因于样品中存在更精细的晶粒结构。特别值得注意的是，在所有退火试样中，在 Ta = 973 K 温度下退火的纳米晶 Sm4ZrFe33 复合物显示出最有前途的磁性能。该试样的矫顽力 Hc 为 18 500 Oe，剩磁（Mr）为 58 emu g-1，最大能积（(BH)max）为 5.18 MGOe，居里温度（TC）≈804 K，磁各向异性场（Ha）为 115 980 Oe。这些研究成果为未来利用基于 Sm4ZrFe33 化合物的纳米晶合金在永磁体、自旋电子器件和磁记录领域进行研究和应用铺平了道路。
{"title":"Microstructural and Magnetic Characteristics of Nanocrystalline Sm4ZrFe33 Alloys","authors":"Riadh Fersi, Apolo Palarizato Dalia","doi":"10.1002/pssa.202400516","DOIUrl":"https://doi.org/10.1002/pssa.202400516","url":null,"abstract":"This work focuses on the study of the microstructure and magnetic properties of nanocrystalline powders of Sm<jats:sub>4</jats:sub>ZrFe<jats:sub>3</jats:sub><jats:sub>3</jats:sub>, prepared by high‐energy ball milling. The Sm<jats:sub>4</jats:sub>ZrFe<jats:sub>3</jats:sub><jats:sub>3</jats:sub> compound adopts a monoclinic structure (space group Cm). Upon annealing, these Sm<jats:sub>4</jats:sub>ZrFe<jats:sub>3</jats:sub><jats:sub>3</jats:sub> samples exhibit notable variations in their extrinsic magnetic properties, closely linked to temperature fluctuations. The investigation delves into the correlation between morphology, grain size and magnetic characteristics. A significant enhancement in coercivity (<jats:italic>H</jats:italic><jats:sub>c</jats:sub>), remanent magnetization (<jats:italic>M</jats:italic><jats:sub>r</jats:sub>), and maximum energy product ((<jats:italic>BH</jats:italic>)<jats:sub>max</jats:sub>) is observed, primarily attributed to the finer grain structure present in the samples. Particularly noteworthy, among all annealed specimens, the nanocrystalline Sm<jats:sub>4</jats:sub>ZrFe<jats:sub>3</jats:sub><jats:sub>3</jats:sub> compound annealed at a temperature of <jats:italic>T</jats:italic><jats:sub>a</jats:sub> = 973 K demonstrates the most promising magnetic properties. This specimen exhibits a coercivity <jats:italic>H</jats:italic><jats:sub>c</jats:sub> of 18 500 Oe, remanent magnetization (<jats:italic>M</jats:italic><jats:sub>r</jats:sub>) of 58 emu g<jats:sup>−1</jats:sup>, maximum energy product ((<jats:italic>BH</jats:italic>)<jats:sub>max</jats:sub>) of 5.18 MGOe, Curie temperature (<jats:italic>T</jats:italic><jats:sub>C</jats:sub>) of ≈804 K, and magnetic anisotropy field (<jats:italic>H</jats:italic><jats:sub>a</jats:sub>) of 115 980 Oe. These research findings pave the way for future investigations and applications in the realm of permanent magnets, spintronic devices, and magnetic recording, utilizing nanocrystalline alloys based on the Sm<jats:sub>4</jats:sub>ZrFe<jats:sub>3</jats:sub><jats:sub>3</jats:sub> compound.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Michele S. Netto, Rafaela M. J. Lemos, Marco P. Rodrigues, Joseane S. Porto, Ruth S. Brum, Luis O. S. Bulhôes, César O. Avellaneda
When exposed to light sources, photochromic (PC) materials change their optical properties and can lessen the transmission of UV and infrared radiation. This results in optimal thermal comfort and a pleasing visual contrast between the internal and external settings. This study uses computer modeling to analyze the annual energy usage in a home with natural ventilation in order to compare the effectiveness of photochromic films with commercial glass. The study is carried out using the EnergyPlus program in the cities of São Carlos and Cuiabá ‐ Brazil. Experiments and numerical simulations with data from doped and undoped tungsten trioxide (WO3) PC films are used in the study. Given the rise in energy usage and the pursuit of thermal comfort, this method is essential for assessing the thermal performance of buildings. Evaluations included a comparison of air conditioner performance and energy savings analysis, which leads to a noteworthy annual reduction in energy usage of up to 216.55 kWh and a 40% improvement in visual comfort. It is determined that PC film's dynamic behavior is the best option for comfort in terms of heat, illumination, and visual comfort.
{"title":"Characterization and Energy Performance of WO3 Doped and Undoped Photochromic Films","authors":"Michele S. Netto, Rafaela M. J. Lemos, Marco P. Rodrigues, Joseane S. Porto, Ruth S. Brum, Luis O. S. Bulhôes, César O. Avellaneda","doi":"10.1002/pssa.202400425","DOIUrl":"https://doi.org/10.1002/pssa.202400425","url":null,"abstract":"When exposed to light sources, photochromic (PC) materials change their optical properties and can lessen the transmission of UV and infrared radiation. This results in optimal thermal comfort and a pleasing visual contrast between the internal and external settings. This study uses computer modeling to analyze the annual energy usage in a home with natural ventilation in order to compare the effectiveness of photochromic films with commercial glass. The study is carried out using the EnergyPlus program in the cities of São Carlos and Cuiabá ‐ Brazil. Experiments and numerical simulations with data from doped and undoped tungsten trioxide (WO<jats:sub>3</jats:sub>) PC films are used in the study. Given the rise in energy usage and the pursuit of thermal comfort, this method is essential for assessing the thermal performance of buildings. Evaluations included a comparison of air conditioner performance and energy savings analysis, which leads to a noteworthy annual reduction in energy usage of up to 216.55 kWh and a 40% improvement in visual comfort. It is determined that PC film's dynamic behavior is the best option for comfort in terms of heat, illumination, and visual comfort.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"8 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a numerical simulation study on CZTSSe‐based thin‐film solar cells using Silvaco Atlas software, focusing on optimization and loss analysis. Starting from an initial power conversion efficiency of 12.73%, the ZnO/CdS/CZTSSe cell structure is systematically optimized. Through precise adjustment of layer thickness and doping density, the efficiency is improved to 18.75%. The optimal parameters are 2.5 μm (1017 cm−3) for CZTSSe, 0.01 μm (1018 cm−3) for CdS, and 0.02 μm (1019 cm−3) for ZnO. Loss analysis reveals that increasing CZTSSe thickness beyond 2.5 μm leads to higher bulk series resistance, while thicker CdS and ZnO layers reduce photocurrent generation. Doping density significantly impacts open‐circuit voltage, while layer thickness primarily affects short‐circuit current and fill factor. Performance improves at lower temperatures, achieving 22.2% efficiency at 250 K. These findings provide valuable insights for developing high‐efficiency CZTSSe solar cells.
{"title":"Enhanced CZTSSe Thin‐Film Solar Cell Efficiency: Key Parameter Analysis","authors":"Loumafak Hafaifa, Mostefa Maache, Selma Rabhi, Zehor Allam, Zineb Ibtissem Gouchida, Yazid Benbouzid, Achouak Zebeir, Razika Adjouz","doi":"10.1002/pssa.202400332","DOIUrl":"https://doi.org/10.1002/pssa.202400332","url":null,"abstract":"This work presents a numerical simulation study on CZTSSe‐based thin‐film solar cells using Silvaco Atlas software, focusing on optimization and loss analysis. Starting from an initial power conversion efficiency of 12.73%, the ZnO/CdS/CZTSSe cell structure is systematically optimized. Through precise adjustment of layer thickness and doping density, the efficiency is improved to 18.75%. The optimal parameters are 2.5 μm (10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup>) for CZTSSe, 0.01 μm (10<jats:sup>18</jats:sup> cm<jats:sup>−3</jats:sup>) for CdS, and 0.02 μm (10<jats:sup>19</jats:sup> cm<jats:sup>−3</jats:sup>) for ZnO. Loss analysis reveals that increasing CZTSSe thickness beyond 2.5 μm leads to higher bulk series resistance, while thicker CdS and ZnO layers reduce photocurrent generation. Doping density significantly impacts open‐circuit voltage, while layer thickness primarily affects short‐circuit current and fill factor. Performance improves at lower temperatures, achieving 22.2% efficiency at 250 K. These findings provide valuable insights for developing high‐efficiency CZTSSe solar cells.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"9 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bruno Souza Zanatta, Silésia de Fátima Curcino da Silva, Pedro Henrique Dondori Zaramella, Otávio Luiz Bottecchia, José de los Santos Guerra, Erick Piovesan, Alexandre Marletta
Herein, p‐type flexible and transparent electrodes of Cu2–xSe are produced at different conversion times at 20, 25, and 30 s of polyester/Cu thin films via chemical bath deposition. To study the charge transport properties across the Cu2–xSe layer, the organic light‐emitting diodes (OLEDs) are produced according to the following configuration: polyester/Cu2–xSe/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate)/poly[2‐methoxy‐5‐(2‐ethylhexyloxy)‐1,4‐phenylenevinylene]/aluminum (polyester/Cu2–xSe/PEDOT:PSS/MEH‐PPV/Al), resulting in a direct tunneling in the transport of holes. The control of the barrier's energy between the Cu2–xSe electrode and the MEH‐PPV polymer allows it to tune selectively of the OLED’ charge transport mechanism. The morphological analysis of the Cu2–xSe electrode, carried out using atomic force microscopy, as well as the temperature dependence of the current–voltage measurements in the OLED (50–300 K) shows the ideal deposition time in the chemical bath. In contrast, impedance spectroscopy results confirm the inexistence of the Cu2–xSe/PEDOT:PSS interface using 30 s to Cu2–xSe synthesis. As a result, the control of the injection mechanism of charges can be obtained by reducing the barrier energy to hole transport during the synthesis process of the Cu2–xSe layer via chemical bath deposition, thus simplifying and reducing the costs of the device's processing.
{"title":"Surface Passivation of the Cu2–xSe Electrode During the Chemical Bath Deposition","authors":"Bruno Souza Zanatta, Silésia de Fátima Curcino da Silva, Pedro Henrique Dondori Zaramella, Otávio Luiz Bottecchia, José de los Santos Guerra, Erick Piovesan, Alexandre Marletta","doi":"10.1002/pssa.202400510","DOIUrl":"https://doi.org/10.1002/pssa.202400510","url":null,"abstract":"Herein, <jats:italic>p</jats:italic>‐type flexible and transparent electrodes of Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se are produced at different conversion times at 20, 25, and 30 s of polyester/Cu thin films via chemical bath deposition. To study the charge transport properties across the Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se layer, the organic light‐emitting diodes (OLEDs) are produced according to the following configuration: polyester/Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate)/poly[2‐methoxy‐5‐(2‐ethylhexyloxy)‐1,4‐phenylenevinylene]/aluminum (polyester/Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se/PEDOT:PSS/MEH‐PPV/Al), resulting in a direct tunneling in the transport of holes. The control of the barrier's energy between the Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se electrode and the MEH‐PPV polymer allows it to tune selectively of the OLED’ charge transport mechanism. The morphological analysis of the Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se electrode, carried out using atomic force microscopy, as well as the temperature dependence of the current–voltage measurements in the OLED (50–300 K) shows the ideal deposition time in the chemical bath. In contrast, impedance spectroscopy results confirm the inexistence of the Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se/PEDOT:PSS interface using 30 s to Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se synthesis. As a result, the control of the injection mechanism of charges can be obtained by reducing the barrier energy to hole transport during the synthesis process of the Cu<jats:sub>2–<jats:italic>x</jats:italic></jats:sub>Se layer via chemical bath deposition, thus simplifying and reducing the costs of the device's processing.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"74 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A facile carbon‐doping process is proposed to enhance the photocatalytic activity of anatase/rutile‐mixed phase TiO2 nanoparticles using polyethylene glycol (PEG). The TiO2‐PEG composite is loaded into a boat and covered tightly with Al foil to increase the pressure inside that boat during annealing. The boat is annealed for 1 h at different temperatures and PEG ratios. The annealing with 30% PEG at 300 °C enhances the decomposition of organic pollutants and bacterial inactivation under 405 nm light compared to the annealing without Al films. This annealing causes 2.5–3% carbon doping, introduces more oxygen vacancies, and converts PEG into organic compounds rich in CC bond components. These modifications of TiO2 can be attributed to carbon‐centered radicals produced from PEG during annealing. The modifications change the band structure to enhance the photogenerated carrier concentration responsible for the photocatalytic activity. The carbon doping narrows the anatase and rutile bandgaps, allowing the anatase phase to absorb 405 nm light. The introduced oxygen vacancies increase the electron‐trapping sites and raise the adsorbed oxygen groups enhancing the upward band bending and the depletion layer depth at the surface. The PEG‐converted compounds can transfer photogenerated electrons within the compounds to the TiO2 conduction band.
{"title":"Enhanced Photocatalytic Activity of Anatase/Rutile‐Mixed Phase Titanium Dioxide Nanoparticles Annealed with Polyethylene Glycol at Low Temperatures in Aluminum Foil‐Covered Combustion Boats","authors":"Retsuo Kawakami, Takumi Matsumoto, Shin‐ichiro Yanagiya, Akihiro Shirai, Yoshitaka Nakano, Masahito Niibe","doi":"10.1002/pssa.202400478","DOIUrl":"https://doi.org/10.1002/pssa.202400478","url":null,"abstract":"A facile carbon‐doping process is proposed to enhance the photocatalytic activity of anatase/rutile‐mixed phase TiO<jats:sub>2</jats:sub> nanoparticles using polyethylene glycol (PEG). The TiO<jats:sub>2</jats:sub>‐PEG composite is loaded into a boat and covered tightly with Al foil to increase the pressure inside that boat during annealing. The boat is annealed for 1 h at different temperatures and PEG ratios. The annealing with 30% PEG at 300 °C enhances the decomposition of organic pollutants and bacterial inactivation under 405 nm light compared to the annealing without Al films. This annealing causes 2.5–3% carbon doping, introduces more oxygen vacancies, and converts PEG into organic compounds rich in CC bond components. These modifications of TiO<jats:sub>2</jats:sub> can be attributed to carbon‐centered radicals produced from PEG during annealing. The modifications change the band structure to enhance the photogenerated carrier concentration responsible for the photocatalytic activity. The carbon doping narrows the anatase and rutile bandgaps, allowing the anatase phase to absorb 405 nm light. The introduced oxygen vacancies increase the electron‐trapping sites and raise the adsorbed oxygen groups enhancing the upward band bending and the depletion layer depth at the surface. The PEG‐converted compounds can transfer photogenerated electrons within the compounds to the TiO<jats:sub>2</jats:sub> conduction band.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2012 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Katharina Peh, Dominik Bratek, Kevin Lauer, Robin Lars Benedikt Müller, Dirk Schulze, Aaron Flötotto, Stefan Krischok
The impact of light‐induced degradation (LID) treatments is investigated using low‐temperature photoluminescence in Si:In. A feature called as the P‐line, located at 1.118 eV, provides information on the decisive energy barrier for the LID effect. The intensity of the P‐line can be reproducibly influenced by illumination and annealing treatments. The decay of the P‐line after quenching, illumination, and moderate annealing of the silicon samples is measured as function of time and annealing temperature. Both indium‐doped as‐grown Czochralski and indium implanted float‐zone silicon wafers are examined and their behavior is compared. Based on these measurements, an energy barrier for the P‐line defect transition is calculated. The LID defect model is used to discuss the results.
我们利用硅铟（Si:In）的低温光致发光研究了光诱导降解（LID）处理的影响。位于 1.118 eV 的 P 线特征提供了有关 LID 效应决定性能障的信息。P 线的强度会受到照明和退火处理的影响。硅样品经过淬火、光照和适度退火后，P 线的衰减是时间和退火温度的函数。研究了掺铟的原生长 Czochralski 硅片和铟植入浮区硅片，并对它们的行为进行了比较。根据这些测量结果，计算出了 P 线缺陷转变的能量势垒。讨论结果时使用了 LID 缺陷模型。
{"title":"Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In","authors":"Katharina Peh, Dominik Bratek, Kevin Lauer, Robin Lars Benedikt Müller, Dirk Schulze, Aaron Flötotto, Stefan Krischok","doi":"10.1002/pssa.202400570","DOIUrl":"https://doi.org/10.1002/pssa.202400570","url":null,"abstract":"The impact of light‐induced degradation (LID) treatments is investigated using low‐temperature photoluminescence in Si:In. A feature called as the P‐line, located at 1.118 eV, provides information on the decisive energy barrier for the LID effect. The intensity of the P‐line can be reproducibly influenced by illumination and annealing treatments. The decay of the P‐line after quenching, illumination, and moderate annealing of the silicon samples is measured as function of time and annealing temperature. Both indium‐doped as‐grown Czochralski and indium implanted float‐zone silicon wafers are examined and their behavior is compared. Based on these measurements, an energy barrier for the P‐line defect transition is calculated. The LID defect model is used to discuss the results.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"8 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
InGaN, a group‐III nitride semiconductor, is expected to be widely used in the field of optoelectronics, owing to its excellent physical properties. However, InGaN has various limitations. This study reports face‐to‐face annealing (FFA) using vapor‐phase and in‐plane mass transport to improve the surface flatness of an InGaN template. InGaN layers are grown on a GaN template that is grown on a c‐plane sapphire substrate using metal–organic vapor‐phase epitaxy. NH3‐assisted FFA is performed at 1050 °C for 20 min, causing V‐pits to vanish from the InGaN template despite their initial density of 3.3 × 108 cm−2. The surface condition of the lower InGaN layer is worse than that of the upper InGaN layer due to the FFA‐induced upward mass transport from the lower layer, thereby eliminating the V‐pits. Compositional analysis of the upper layer through Auger electron spectroscopy and energy‐dispersive X‐ray spectroscopy reveals In peaks despite high‐temperature annealing, thus confirming the presence of InGaN. The results of this study offer possibilities for future InGaN crystal growth and InGaN‐based device fabrication.
氮化镓（InGaN）是第三族氮化物半导体，由于其优异的物理性能，有望在光电子领域得到广泛应用。然而，InGaN 存在各种局限性。本研究利用气相和面内质量传输进行面对面退火 (FFA)，以改善 InGaN 模板的表面平整度。InGaN 层生长在 GaN 模板上，而 GaN 模板是利用金属有机物气相外延法生长在 c 平面蓝宝石衬底上的。在 1050 °C 下进行 20 分钟的 NH3 辅助 FFA，使 InGaN 模板上的 V 形坑消失，尽管它们的初始密度为 3.3 × 108 cm-2。下层 InGaN 的表面状况比上层 InGaN 差，这是由于 FFA 诱导了质量从下层向上迁移，从而消除了 V 形坑。通过欧杰电子能谱和能量色散 X 射线能谱对上层进行成分分析，发现尽管进行了高温退火，但仍存在 In 峰，从而证实了 InGaN 的存在。这项研究结果为未来的 InGaN 晶体生长和基于 InGaN 的器件制造提供了可能性。
{"title":"Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing","authors":"Atsuto Nakata, Ayano Sasaki, Satoshi Kurai, Narihito Okada, Yoichi Yamada","doi":"10.1002/pssa.202400052","DOIUrl":"https://doi.org/10.1002/pssa.202400052","url":null,"abstract":"InGaN, a group‐III nitride semiconductor, is expected to be widely used in the field of optoelectronics, owing to its excellent physical properties. However, InGaN has various limitations. This study reports face‐to‐face annealing (FFA) using vapor‐phase and in‐plane mass transport to improve the surface flatness of an InGaN template. InGaN layers are grown on a GaN template that is grown on a <jats:italic>c</jats:italic>‐plane sapphire substrate using metal–organic vapor‐phase epitaxy. NH<jats:sub>3</jats:sub>‐assisted FFA is performed at 1050 °C for 20 min, causing V‐pits to vanish from the InGaN template despite their initial density of 3.3 × 10<jats:sup>8</jats:sup> cm<jats:sup>−2</jats:sup>. The surface condition of the lower InGaN layer is worse than that of the upper InGaN layer due to the FFA‐induced upward mass transport from the lower layer, thereby eliminating the V‐pits. Compositional analysis of the upper layer through Auger electron spectroscopy and energy‐dispersive X‐ray spectroscopy reveals In peaks despite high‐temperature annealing, thus confirming the presence of InGaN. The results of this study offer possibilities for future InGaN crystal growth and InGaN‐based device fabrication.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"12 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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