Eskil Einmo, Nikolai Tolstik, Christos Grivas, Maksim Demesh, Paraskevas Kontis, Irina T. Sorokina, Marisa Di Sabatino
A parameter study of ultrashort pulse laser‐induced modifications in the bulk of ZnS crystals is reported. Experimental results on these modifications and their dependence on the pulse energy, writing speed, and depth are presented, with an emphasis on cross‐sectional morphology and induced refractive index changes. Localized permanent material modifications have been inscribed in the bulk of the crystal using a laser with a center emission wavelength of 2.09 μm and a pulse duration of ≈4 ps. The morphology strongly depends on the laser and optical focusing parameters, in particular, on the pulse energy and processing speed, with a significant shift in depth dependence for short pulse‐to‐pulse separations. Depending on the applied pulse energy, distortions of the lateral profile of the refractive index changes appear in the form of oscillatory features in the transverse plane relative to the inducing laser beam. The true extent of the modified material is revealed by the alternating lateral profile with largest induced negative refractive index change, Δn, of −3.88 × 10−2 ± 0.18. Such parametric insight is of critical importance for the understanding and optimization of the fabrication process and for realizing compact 3D photonic devices in the bulk of materials in a reproducible manner.
{"title":"Morphology Characterization and Refractive Index Analysis of Subsurface Ultrashort‐Pulsed Laser Modifications in ZnS","authors":"Eskil Einmo, Nikolai Tolstik, Christos Grivas, Maksim Demesh, Paraskevas Kontis, Irina T. Sorokina, Marisa Di Sabatino","doi":"10.1002/pssa.202400299","DOIUrl":"https://doi.org/10.1002/pssa.202400299","url":null,"abstract":"A parameter study of ultrashort pulse laser‐induced modifications in the bulk of ZnS crystals is reported. Experimental results on these modifications and their dependence on the pulse energy, writing speed, and depth are presented, with an emphasis on cross‐sectional morphology and induced refractive index changes. Localized permanent material modifications have been inscribed in the bulk of the crystal using a laser with a center emission wavelength of 2.09 μm and a pulse duration of ≈4 ps. The morphology strongly depends on the laser and optical focusing parameters, in particular, on the pulse energy and processing speed, with a significant shift in depth dependence for short pulse‐to‐pulse separations. Depending on the applied pulse energy, distortions of the lateral profile of the refractive index changes appear in the form of oscillatory features in the transverse plane relative to the inducing laser beam. The true extent of the modified material is revealed by the alternating lateral profile with largest induced negative refractive index change, Δ<jats:italic>n</jats:italic>, of −3.88 × 10<jats:sup>−2</jats:sup> ± 0.18. Such parametric insight is of critical importance for the understanding and optimization of the fabrication process and for realizing compact 3D photonic devices in the bulk of materials in a reproducible manner.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"40 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141771421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
AlN is a promising candidate for photonic integrated circuits. In this study, horizontally stacked transverse quasi‐phase‐matched (QPM) waveguides with an AlN center core and Si3N4, Ta2O5, and TiO2 side cores were designed to generate squeezed light at 920 nm. The squeezing level was calculated by considering the propagation loss at the wavelengths of the squeezed light and pump light. Using TiO2 for the side cores enhanced the electric field amplitude of the pump light in the AlN center core, and a high nonlinear coupling coefficient was obtained. Owing to the small propagation loss of the AlN waveguide on sapphire and high nonlinear coupling coefficient of the transverse QPM with TiO2 side cores, a squeezing level of over 8.1 dB was expected with a 1 cm long waveguide and pump power of 70 mW.
{"title":"Design of Horizontally Stacked AlN and Dielectric Cores Transverse Quasi‐Phase‐Matched Channel Waveguide for Squeezed Light Generation","authors":"Hiroto Honda, Ryosuke Noro, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama","doi":"10.1002/pssa.202400380","DOIUrl":"https://doi.org/10.1002/pssa.202400380","url":null,"abstract":"AlN is a promising candidate for photonic integrated circuits. In this study, horizontally stacked transverse quasi‐phase‐matched (QPM) waveguides with an AlN center core and Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>, Ta<jats:sub>2</jats:sub>O<jats:sub>5</jats:sub>, and TiO<jats:sub>2</jats:sub> side cores were designed to generate squeezed light at 920 nm. The squeezing level was calculated by considering the propagation loss at the wavelengths of the squeezed light and pump light. Using TiO<jats:sub>2</jats:sub> for the side cores enhanced the electric field amplitude of the pump light in the AlN center core, and a high nonlinear coupling coefficient was obtained. Owing to the small propagation loss of the AlN waveguide on sapphire and high nonlinear coupling coefficient of the transverse QPM with TiO<jats:sub>2</jats:sub> side cores, a squeezing level of over 8.1 dB was expected with a 1 cm long waveguide and pump power of 70 mW.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"33 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141771425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Malek G. Daher, Youssef Trabelsi, Ahmed Nabih Zaki Rashed, Ibrahim S. Yahia, Yogenra Kumar Prajapati, Abdulkarem H. M. Almawgani, Ahmad Alzahrani
Cervical cancer is a disease that affects a lot of people all over the world. The success of treatment is significantly increased by early detection. The new surface plasmon resonance sensor (SPRS) described in this article is constructed from layers of silver, BaTiO3, and graphene, as well as a coupling prism. The transfer matrix (TM) approach is used to evaluate the SPRS structure. To obtain the highest sensitivity of the suggested SPRS, the thicknesses of the Ag and BaTiO3 and the number of Gr sheets are evaluated. Investigations are done on all factors of performance of the proposed device. Exemplary efficiency is achieved using 4 nm (BaTiO3) and 60 nm (Ag) materials. Three layers are chosen as the optimal amount of graphene after investigation. When the optimal thicknesses are employed, the suggested SPRS's greatest sensitivity of 300° RIU−1 has been attained. The suggested SPRS displays better sensitivity when compared to SPRS structures that have already been published in the literature. This SPRS is promising to be used in different biosensing applications due to its high performance.
{"title":"Optical Sensitive Detection of Cervical Cancer Based on Surface Plasmon Resonance Nanostructure","authors":"Malek G. Daher, Youssef Trabelsi, Ahmed Nabih Zaki Rashed, Ibrahim S. Yahia, Yogenra Kumar Prajapati, Abdulkarem H. M. Almawgani, Ahmad Alzahrani","doi":"10.1002/pssa.202300567","DOIUrl":"https://doi.org/10.1002/pssa.202300567","url":null,"abstract":"Cervical cancer is a disease that affects a lot of people all over the world. The success of treatment is significantly increased by early detection. The new surface plasmon resonance sensor (SPRS) described in this article is constructed from layers of silver, BaTiO<jats:sub>3</jats:sub>, and graphene, as well as a coupling prism. The transfer matrix (TM) approach is used to evaluate the SPRS structure. To obtain the highest sensitivity of the suggested SPRS, the thicknesses of the Ag and BaTiO<jats:sub>3</jats:sub> and the number of Gr sheets are evaluated. Investigations are done on all factors of performance of the proposed device. Exemplary efficiency is achieved using 4 nm (BaTiO<jats:sub>3</jats:sub>) and 60 nm (Ag) materials. Three layers are chosen as the optimal amount of graphene after investigation. When the optimal thicknesses are employed, the suggested SPRS's greatest sensitivity of 300° RIU<jats:sup>−1</jats:sup> has been attained. The suggested SPRS displays better sensitivity when compared to SPRS structures that have already been published in the literature. This SPRS is promising to be used in different biosensing applications due to its high performance.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"63 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141771429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anirudh Venugopalarao, Shantveer Kanta, Hareesh Chandrasekar, Aniruddhan Gowrisankar, Muralidharan R. Rengarajan, Digbijoy N. Nath, Srinivasan Raghavan
Gate dielectrics for gallium nitride (GaN) high electron mobility transistor (HEMT) technology have always been challenging because of the nonideal semiconductor–dielectric interface, which leads to electronic traps. Plasma‐enhanced chemical vapor deposition and atomic layer deposition are standard techniques, but they require surface treatment and post‐annealing to control these traps. This article explores metal organic chemical vapor deposition‐grown in situ aluminum nitride (AlN) as a gate dielectric. The interface is expected to be pristine as there is no change in the chamber environment. A thin (10 nm) AlN layer is deposited at a low temperature to minimize strain and prevent the formation of an unwanted conductive channel within the device. The electrical and structural properties of this AlN‐capped HEMT are compared to a standard GaN‐capped HEMT, including temperature‐dependent studies. The results show that the AlN‐capped HEMT retains a higher charge in the channel while having an order of magnitude lower gate leakage than the GaN‐capped sample. Furthermore, the AlN‐capped HEMT performs similarly to the GaN‐capped HEMT in terms of temperature‐dependent leakage, dynamic on‐resistance, and temperature coefficient of resistance.
氮化镓（GaN）高电子迁移率晶体管（HEMT）技术的栅极电介质一直是一项挑战，因为半导体-电介质界面的非理想性会导致电子陷阱。等离子体增强化学气相沉积和原子层沉积是标准技术，但它们需要表面处理和后退火来控制这些陷阱。本文探讨了将金属有机化学气相沉积原位生长的氮化铝（AlN）作为栅极电介质。由于腔室环境没有变化，因此预计界面是原始的。氮化铝薄层（10 nm）在低温下沉积，以尽量减少应变，防止在器件内形成不必要的导电通道。我们将这种氮化铝封层 HEMT 的电气和结构特性与标准氮化镓封层 HEMT 进行了比较，包括随温度变化的研究。结果表明，AlN 封装的 HEMT 在沟道中保留了更高的电荷，同时栅极漏电流比 GaN 封装的样品低一个数量级。此外，在随温度变化的漏电、动态导通电阻和电阻温度系数方面，AlN 封装 HEMT 的性能与 GaN 封装 HEMT 相似。
{"title":"Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor","authors":"Anirudh Venugopalarao, Shantveer Kanta, Hareesh Chandrasekar, Aniruddhan Gowrisankar, Muralidharan R. Rengarajan, Digbijoy N. Nath, Srinivasan Raghavan","doi":"10.1002/pssa.202400050","DOIUrl":"https://doi.org/10.1002/pssa.202400050","url":null,"abstract":"Gate dielectrics for gallium nitride (GaN) high electron mobility transistor (HEMT) technology have always been challenging because of the nonideal semiconductor–dielectric interface, which leads to electronic traps. Plasma‐enhanced chemical vapor deposition and atomic layer deposition are standard techniques, but they require surface treatment and post‐annealing to control these traps. This article explores metal organic chemical vapor deposition‐grown in situ aluminum nitride (AlN) as a gate dielectric. The interface is expected to be pristine as there is no change in the chamber environment. A thin (10 nm) AlN layer is deposited at a low temperature to minimize strain and prevent the formation of an unwanted conductive channel within the device. The electrical and structural properties of this AlN‐capped HEMT are compared to a standard GaN‐capped HEMT, including temperature‐dependent studies. The results show that the AlN‐capped HEMT retains a higher charge in the channel while having an order of magnitude lower gate leakage than the GaN‐capped sample. Furthermore, the AlN‐capped HEMT performs similarly to the GaN‐capped HEMT in terms of temperature‐dependent leakage, dynamic on‐resistance, and temperature coefficient of resistance.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"12 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Miriam M. Nicolás‐Marín, Jesús Roberto González‐Castillo, Maykel Courel‐Piedrahita, Inés Riech‐Méndez, Pedro Antonio Mijangos‐Alonzo, Osvaldo Vigil‐Galán
Solar cells based on Sb2(S1−x,Sex)3 ternary compounds have shown the highest reported efficiency value compared to their Sb2Se3 and Sb2S3 counterparts in antimony chalcogenide technology. However, the reported record efficiencies for these new emergent solar cells are still well below the theoretical values according to their bandgap value or for the traditional solar cells in the thin film technology. This article presents an analysis regarding the optimal composition that guarantees an increase in efficiency in the manufacture of Sby(S1−x,Sex)3 solar cells, as well as the proposal of a new synthesis method that allows obtaining the ternary compound with the calculated optimal composition. From theoretical considerations, a composition of Sb1.85(S0.63,Se0.42)3 is obtained. This composition is equivalent to optimal values Se/(S + Se) = 0.4 and Sb/(S + Se) = 0.88. The results of the new proposed synthesis method are presented and discussed.
{"title":"Optimal Composition of the Sby(S1−x,Sex)3 Ternary Absorber for High Efficiency Solar Cells","authors":"Miriam M. Nicolás‐Marín, Jesús Roberto González‐Castillo, Maykel Courel‐Piedrahita, Inés Riech‐Méndez, Pedro Antonio Mijangos‐Alonzo, Osvaldo Vigil‐Galán","doi":"10.1002/pssa.202400288","DOIUrl":"https://doi.org/10.1002/pssa.202400288","url":null,"abstract":"Solar cells based on Sb<jats:sub>2</jats:sub>(S<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>,Se<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>3</jats:sub> ternary compounds have shown the highest reported efficiency value compared to their Sb<jats:sub>2</jats:sub>Se<jats:sub>3</jats:sub> and Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> counterparts in antimony chalcogenide technology. However, the reported record efficiencies for these new emergent solar cells are still well below the theoretical values according to their bandgap value or for the traditional solar cells in the thin film technology. This article presents an analysis regarding the optimal composition that guarantees an increase in efficiency in the manufacture of Sb<jats:sub><jats:italic>y</jats:italic></jats:sub>(S<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>,Se<jats:sub><jats:italic>x</jats:italic></jats:sub>)<jats:sub>3</jats:sub> solar cells, as well as the proposal of a new synthesis method that allows obtaining the ternary compound with the calculated optimal composition. From theoretical considerations, a composition of Sb<jats:sub>1.85</jats:sub>(S<jats:sub>0.63</jats:sub>,Se<jats:sub>0.42</jats:sub>)<jats:sub>3</jats:sub> is obtained. This composition is equivalent to optimal values Se/(S + Se) = 0.4 and Sb/(S + Se) = 0.88. The results of the new proposed synthesis method are presented and discussed.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"85 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
During the oxidation of SiGe regions, Si is preferably incorporated into the oxide, while Ge atoms accumulate at the SiGe side of the interface. Moreover, during oxidation of fin structures of Si/SiGe superlattices, Ge atoms diffuse from SiGe regions to Si regions along the oxide/SiGe interface, as recently reported. This surface diffusion can be used for the formation of Si nanowires surrounded by SiGe, and possibly for the fabrication of gate all‐around transistors. Herein, a new process simulation model is presented which describes SiGe oxidation and the diffusion of Ge atoms along the interface. During oxidation, Ge atoms can be trapped at the oxide/SiGe interface, diffuse along the interface, and be re‐emitted into the SiGe bulk. The model reproduces measured oxidation rates, the pileup of Ge atoms at the SiGe side of planar oxide/SiGe interfaces, the injection of self‐interstitials and the reduction of vacancies at oxidizing SiGe surfaces, and the recently reported diffusion of Ge atoms along the surface of fin structures made of Si/SiGe superlattices.
在 SiGe 区域的氧化过程中，Si 原子最好与氧化物结合，而 Ge 原子则聚集在界面的 SiGe 侧。此外，在 Si/SiGe 超晶格的鳍状结构氧化过程中，Ge 原子会沿着氧化物/SiGe 界面从 SiGe 区域扩散到 Si 区域，正如最近所报道的那样。这种表面扩散可用于形成被 SiGe 包围的 Si 纳米线，也可能用于制造栅极全方位晶体管。本文介绍了一种新的工艺模拟模型，该模型描述了 SiGe 氧化和 Ge 原子沿界面扩散的过程。在氧化过程中，Ge 原子会被截留在氧化物/SiGe 界面，沿界面扩散，并重新释放到 SiGe 体中。该模型再现了测量到的氧化率、平面氧化物/SiGe 界面 SiGe 侧的 Ge 原子堆积、氧化 SiGe 表面自间隙的注入和空位的减少，以及最近报道的 Ge 原子沿由 Si/SiGe 超晶格制成的鳍状结构表面的扩散。
{"title":"Technology Computer‐Aided Design Model for SiGe Oxidation and Ge Diffusion Along Oxide/SiGe Interfaces","authors":"Christoph Zechner, Nikolas Zographos","doi":"10.1002/pssa.202400235","DOIUrl":"https://doi.org/10.1002/pssa.202400235","url":null,"abstract":"During the oxidation of SiGe regions, Si is preferably incorporated into the oxide, while Ge atoms accumulate at the SiGe side of the interface. Moreover, during oxidation of fin structures of Si/SiGe superlattices, Ge atoms diffuse from SiGe regions to Si regions along the oxide/SiGe interface, as recently reported. This surface diffusion can be used for the formation of Si nanowires surrounded by SiGe, and possibly for the fabrication of gate all‐around transistors. Herein, a new process simulation model is presented which describes SiGe oxidation and the diffusion of Ge atoms along the interface. During oxidation, Ge atoms can be trapped at the oxide/SiGe interface, diffuse along the interface, and be re‐emitted into the SiGe bulk. The model reproduces measured oxidation rates, the pileup of Ge atoms at the SiGe side of planar oxide/SiGe interfaces, the injection of self‐interstitials and the reduction of vacancies at oxidizing SiGe surfaces, and the recently reported diffusion of Ge atoms along the surface of fin structures made of Si/SiGe superlattices.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"6 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, considering the thermal effects, a PN GaN/AlN heterojunction in a piezomagnetic and piezoelectric semiconductor composite fiber driven by dynamic magnetic loads is studied. The true nonlinear constitutive equations of the electric current density for the composite heterojunction are employed. Thus, a nonlinear finite‐element method (FEM) is adopted to obtain dynamic responses of the composite heterojunction, including the mechanical displacement, electric potential, and electron and hole concentrations. By comparing dynamic responses with those derived by COMSOL Multiphysics, the nonlinear FEM is verified. Based on numerical results, regulation effects of the temperature on distributions of the mechanical displacement, electron and hole concentrations, and temperature–current–voltage characteristics are discussed.
{"title":"Temperature Effects on GaN/AlN Heterojunction in a Piezomagnetic and Piezoelectric Semiconductor Composite Fiber","authors":"QiaoYun Zhang, JiaHao Xu, ZhiCai Song, Ning Tan","doi":"10.1002/pssa.202400186","DOIUrl":"https://doi.org/10.1002/pssa.202400186","url":null,"abstract":"In this article, considering the thermal effects, a PN GaN/AlN heterojunction in a piezomagnetic and piezoelectric semiconductor composite fiber driven by dynamic magnetic loads is studied. The true nonlinear constitutive equations of the electric current density for the composite heterojunction are employed. Thus, a nonlinear finite‐element method (FEM) is adopted to obtain dynamic responses of the composite heterojunction, including the mechanical displacement, electric potential, and electron and hole concentrations. By comparing dynamic responses with those derived by COMSOL Multiphysics, the nonlinear FEM is verified. Based on numerical results, regulation effects of the temperature on distributions of the mechanical displacement, electron and hole concentrations, and temperature–current–voltage characteristics are discussed.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"13 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates symmetrical/asymmetrical vertical electrolyte‐insulated semiconductor Tunnel field effect transistors (TFETs) (SV‐EIS‐TFET/ASV‐EIS‐TFET) for their application as pH biosensors. On the basis of device‐level simulations, the underlying physics of all architectures is explored and the comparative biosensing abilities of pH biosensors are evaluated. A vertical electrolyte Bio‐TFET with overlapping electrodes is presented in this study. The pH response is measured by observing the change in drain current and potential when the pH of the injected solution transitions from a lower to a higher level. As an intrinsic semiconductor material, electrons and holes in the electrolyte represent mobile ions in the solution. The region of the electrolyte has an electron affinity of 1.32 eV, a bandgap of 1.12 eV, and a dielectric constant of 78. Double gate structures raise concerns about correctly aligning the right and left gates because of their sensitivity impact. An analysis of the effect of gate misalignment on biosensor surface potentials, drain currents, and transconductance is presented. Furthermore, pH value ranges of 1–14 are considered for various sensitivity parameters. Simulations are performed using Silvaco TCAD for the SV‐EIS‐TFET and ASV‐EIS‐TFET biosensors.
{"title":"Comparative Analysis of Symmetrical/Asymmetrical Vertical Electrolyte‐Insulated Semiconductor Tunnel FET for pH Sensor Application","authors":"Aditya Kumar Singh Pundir, Girish Wadhwa, Pawandeep Kaur, Prashant Mani, Sheetal Bhandari","doi":"10.1002/pssa.202400093","DOIUrl":"https://doi.org/10.1002/pssa.202400093","url":null,"abstract":"This study investigates symmetrical/asymmetrical vertical electrolyte‐insulated semiconductor Tunnel field effect transistors (TFETs) (SV‐EIS‐TFET/ASV‐EIS‐TFET) for their application as pH biosensors. On the basis of device‐level simulations, the underlying physics of all architectures is explored and the comparative biosensing abilities of pH biosensors are evaluated. A vertical electrolyte Bio‐TFET with overlapping electrodes is presented in this study. The pH response is measured by observing the change in drain current and potential when the pH of the injected solution transitions from a lower to a higher level. As an intrinsic semiconductor material, electrons and holes in the electrolyte represent mobile ions in the solution. The region of the electrolyte has an electron affinity of 1.32 eV, a bandgap of 1.12 eV, and a dielectric constant of 78. Double gate structures raise concerns about correctly aligning the right and left gates because of their sensitivity impact. An analysis of the effect of gate misalignment on biosensor surface potentials, drain currents, and transconductance is presented. Furthermore, pH value ranges of 1–14 are considered for various sensitivity parameters. Simulations are performed using Silvaco TCAD for the SV‐EIS‐TFET and ASV‐EIS‐TFET biosensors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"15 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Martin Perrosé, Yoann Baron, Baptiste Lefaucher, Pablo Acosta Alba, Jean‐Pierre Raskin
Herein, high‐resistivity silicon substrates with specific He+ ion implantations to mitigate the parasitic surface conduction effect are studied. Several postimplantation thermal annealing conditions are investigated. Substrate performance is assessed at radiofrequencies (RFs) using the small‐signal characterization of coplanar waveguides (CPW) structures. The best effective resistivity (ρeff) of 4 kΩ cm is achieved with the wafer annealed at 600 °C for 2 h. This ρeff value is also stable as a function of DC bias applied to the CPWs. Those high RF performances originate from the nature of the defects created by ion implantation. Defects are deeply analyzed using spectroscopy measurement and scanning transmission electron microscopy. Combining these measurements, it is shown that {311} defects are probably responsible for the achieved high RF performances. Finally, the link between charge carriers trapping in the RF domain and defects nature is discussed to develop a defects engineering strategy for low‐loss RF substrates. The proposed fabrication method enables the fabrication of RF passivation layer locally over the wafer, and thus the cointegration of RF devices with fully depleted silicon‐on‐insulator technology.
本文研究了特定 He+ 离子植入的高电阻率硅衬底，以减轻寄生表面传导效应。研究了几种植入后热退火条件。利用共面波导（CPW）结构的小信号特性评估了基底在射频（RF）中的性能。在 600 °C 下退火 2 小时的晶片达到了 4 kΩ cm 的最佳有效电阻率 (ρeff)。这些高射频性能源于离子注入产生的缺陷的性质。利用光谱测量和扫描透射电子显微镜对缺陷进行了深入分析。结合这些测量结果表明，{311}缺陷可能是实现高射频性能的原因。最后，讨论了射频域中电荷载流子捕获与缺陷性质之间的联系，为低损耗射频基底制定了缺陷工程策略。所提出的制造方法可以在晶圆上局部制造射频钝化层，从而将射频器件与全耗尽绝缘体硅技术结合起来。
{"title":"Defect Engineering for Enhanced Silicon Radiofrequency Substrates","authors":"Martin Perrosé, Yoann Baron, Baptiste Lefaucher, Pablo Acosta Alba, Jean‐Pierre Raskin","doi":"10.1002/pssa.202400215","DOIUrl":"https://doi.org/10.1002/pssa.202400215","url":null,"abstract":"Herein, high‐resistivity silicon substrates with specific He<jats:sup>+</jats:sup> ion implantations to mitigate the parasitic surface conduction effect are studied. Several postimplantation thermal annealing conditions are investigated. Substrate performance is assessed at radiofrequencies (RFs) using the small‐signal characterization of coplanar waveguides (CPW) structures. The best effective resistivity (<jats:italic>ρ</jats:italic><jats:sub>eff</jats:sub>) of 4 kΩ cm is achieved with the wafer annealed at 600 °C for 2 h. This <jats:italic>ρ</jats:italic><jats:sub>eff</jats:sub> value is also stable as a function of DC bias applied to the CPWs. Those high RF performances originate from the nature of the defects created by ion implantation. Defects are deeply analyzed using spectroscopy measurement and scanning transmission electron microscopy. Combining these measurements, it is shown that {311} defects are probably responsible for the achieved high RF performances. Finally, the link between charge carriers trapping in the RF domain and defects nature is discussed to develop a defects engineering strategy for low‐loss RF substrates. The proposed fabrication method enables the fabrication of RF passivation layer locally over the wafer, and thus the cointegration of RF devices with fully depleted silicon‐on‐insulator technology.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"35 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141746099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Adrian Afzal Ariff, Aizuddin Supee, Masaya Ichimura, Mohd Zamri Mohd Yusop, Aishah Abdul Jalil
A chemical bath deposition (CBD) is applied to deposit n‐type iron sulfide (FeSxOy) film on fluorine (F)‐doped tin oxide (SnO2)–FTO substrate. The duration, temperature, and magnetic stirrer's speed in CBD are 3 h, 75 °C, and 100 revolutions per minute. The influence of complexing agents’ concentration (≤200 mm)–acid (tartaric and lactic) on the physicochemical properties of film is studied. All films are n‐type semiconductors with large bandgap (2.95–3.58 eV) and contain high oxygen (≈56–83%). Scanning electron microscopy image shows the 50 mm tartaric acid film has a uniform and denser surface morphology. FeSxOy film with tartaric acid has lesser goethite and hematite peaks in X‐ray diffraction than lactic acid. The FeSxOy film with 100 mm lactic acid exhibits a slightly higher transmittance at ≈350–450 nm. The FeSxOy homostructure reveals average open‐circuit voltage (Voc) = 0.45 V, short‐circuit current (Jsc) = 0.0003 mA cm−2, fill factor =38%, and efficiency (η) = 0.57%.
在掺氟氧化锡（SnO2）-FTO 基底上采用化学沉积（CBD）沉积 n 型硫化铁（FeSxOy）薄膜。CBD 的持续时间、温度和磁力搅拌器的转速分别为 3 小时、75 °C、100 转/分钟。研究了络合剂浓度（≤200 毫米）-酸（酒石酸和乳酸）对薄膜理化性质的影响。所有薄膜都是具有较大带隙（2.95-3.58 eV）的 n 型半导体，含氧量较高（≈56-83%）。扫描电子显微镜图像显示，50 毫米的酒石酸薄膜具有均匀致密的表面形态。与乳酸相比，含有酒石酸的 FeSxOy 膜在 X 射线衍射中的鹅铁矿和赤铁矿峰较少。含有 100 mm 乳酸的 FeSxOy 膜在≈350-450 nm 处的透射率略高。FeSxOy 均质结构的平均开路电压 (Voc) = 0.45 V，短路电流 (Jsc) = 0.0003 mA cm-2，填充因子 = 38%，效率 (η) = 0.57%。
{"title":"Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n‐Type FeSxOy for Homostructure Solar Cell","authors":"Adrian Afzal Ariff, Aizuddin Supee, Masaya Ichimura, Mohd Zamri Mohd Yusop, Aishah Abdul Jalil","doi":"10.1002/pssa.202400376","DOIUrl":"https://doi.org/10.1002/pssa.202400376","url":null,"abstract":"A chemical bath deposition (CBD) is applied to deposit n‐type iron sulfide (FeS<jats:sub><jats:italic>x</jats:italic></jats:sub>O<jats:sub><jats:italic>y</jats:italic></jats:sub>) film on fluorine (F)‐doped tin oxide (SnO<jats:sub>2</jats:sub>)–FTO substrate. The duration, temperature, and magnetic stirrer's speed in CBD are 3 h, 75 °C, and 100 revolutions per minute. The influence of complexing agents’ concentration (≤200 m<jats:sc>m</jats:sc>)–acid (tartaric and lactic) on the physicochemical properties of film is studied. All films are n‐type semiconductors with large bandgap (2.95–3.58 eV) and contain high oxygen (≈56–83%). Scanning electron microscopy image shows the 50 m<jats:sc>m</jats:sc> tartaric acid film has a uniform and denser surface morphology. FeS<jats:sub><jats:italic>x</jats:italic></jats:sub>O<jats:sub><jats:italic>y</jats:italic></jats:sub> film with tartaric acid has lesser goethite and hematite peaks in X‐ray diffraction than lactic acid. The FeS<jats:sub><jats:italic>x</jats:italic></jats:sub>O<jats:sub><jats:italic>y</jats:italic></jats:sub> film with 100 m<jats:sc>m</jats:sc> lactic acid exhibits a slightly higher transmittance at ≈350–450 nm. The FeS<jats:sub><jats:italic>x</jats:italic></jats:sub>O<jats:sub><jats:italic>y</jats:italic></jats:sub> homostructure reveals average open‐circuit voltage (<jats:italic>V</jats:italic><jats:sub>oc</jats:sub>) = 0.45 V, short‐circuit current (<jats:italic>J</jats:italic><jats:sub>sc</jats:sub>) = 0.0003 mA cm<jats:sup>−2</jats:sup>, fill factor =38%, and efficiency (<jats:italic>η</jats:italic>) = 0.57%.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"45 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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