Marcel Schilling, Norman Susilo, Anton Muhin, Giulia Cardinali, Jan Ruschel, Hyun Kyong Cho, Jens Rass, Jakob Höpfner, Tim Wernicke, Sven Einfeldt, Michael Kneissl
The effect of the active region growth temperature (TMQW) on the external quantum efficiency (EQE) of AlGaN‐based far‐ultraviolet‐C light‐emitting diodes (far‐UVC LEDs) emitting near 235 nm is investigated. AlGaN multi‐quantum well (MQW) active regions are grown at temperatures between 850 and 1100 °C by metal‐organic vapor‐phase epitaxy, while special care is taken to keep aluminum mole fractions and thicknesses constant for all MQWs. Temperature‐ and excitation‐power‐dependent photoluminescence spectroscopy reveal a more than tenfold increase of the radiative recombination efficiency (RRE) when the growth temperature increases from 850 to 1020–1060 °C. The output powers for mounted far‐UVC LEDs at 0.2 A increase from 0.5 mW for TMQW of 900 °C to 2.5 mW for TMQW of 1020 °C, corresponding to an increase in EQE from 0.04% to 0.23% at 0.2 A. However, lifetime measurements reveal a reduction of the L70 lifetime from 400 to 1 h when TMQW increases from 900 to 1060 °C. In this investigation, it is shown that optimizing the growth conditions provides a promising approach to further increase the RRE and EQE and lifetime of far‐UVC LEDs.
{"title":"Effect of the AlGaN Multi‐Quantum Well Growth Temperature on the Efficiency of Metal‐Organic Vapor‐Phase Epitaxy‐Grown Far‐Ultraviolet‐C Light‐Emitting Diodes Emitting near 235 nm","authors":"Marcel Schilling, Norman Susilo, Anton Muhin, Giulia Cardinali, Jan Ruschel, Hyun Kyong Cho, Jens Rass, Jakob Höpfner, Tim Wernicke, Sven Einfeldt, Michael Kneissl","doi":"10.1002/pssa.202400392","DOIUrl":"https://doi.org/10.1002/pssa.202400392","url":null,"abstract":"The effect of the active region growth temperature (<jats:italic>T</jats:italic><jats:sub>MQW</jats:sub>) on the external quantum efficiency (EQE) of AlGaN‐based far‐ultraviolet‐C light‐emitting diodes (far‐UVC LEDs) emitting near 235 nm is investigated. AlGaN multi‐quantum well (MQW) active regions are grown at temperatures between 850 and 1100 °C by metal‐organic vapor‐phase epitaxy, while special care is taken to keep aluminum mole fractions and thicknesses constant for all MQWs. Temperature‐ and excitation‐power‐dependent photoluminescence spectroscopy reveal a more than tenfold increase of the radiative recombination efficiency (RRE) when the growth temperature increases from 850 to 1020–1060 °C. The output powers for mounted far‐UVC LEDs at 0.2 A increase from 0.5 mW for <jats:italic>T</jats:italic><jats:sub>MQW</jats:sub> of 900 °C to 2.5 mW for <jats:italic>T</jats:italic><jats:sub>MQW</jats:sub> of 1020 °C, corresponding to an increase in EQE from 0.04% to 0.23% at 0.2 A. However, lifetime measurements reveal a reduction of the L70 lifetime from 400 to 1 h when <jats:italic>T</jats:italic><jats:sub>MQW</jats:sub> increases from 900 to 1060 °C. In this investigation, it is shown that optimizing the growth conditions provides a promising approach to further increase the RRE and EQE and lifetime of far‐UVC LEDs.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"10 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thermal management becomes increasingly important in silicon gate‐all‐around (GAA) field‐effect transistor (FETs) for 3 nm technology node and beyond. The channel thermal conductivity significantly differs from bulk silicon. Precise determination of thermal conductivity is crucial for device evaluation and optimization. This study investigates the thermal conductivity of silicon nanowires, examining the complex interplay between size and channel orientation. The conventional nonequilibrium molecular dynamics (NEMD) method is used with the standard Stillinger–Weber potential at the atomic scale. The results indicate that the thermal conductivity of silicon nanowires along the [100] direction increases monotonically with both length (L) and cross‐sectional side length (D). Conversely, the [110] direction exhibits nonmonotonic variation in thermal conductivity with D, due to increased acoustic–optic phonon scattering. For GAA FET devices with a silicon nanowire channel of L = 20 nm and D = 5 nm, the NEMD calculations yield thermal conductivities of 10.8 W m·K−1 for the [100] direction and 25.3 W m·K−1 for the [110] direction. Subsequently, the self‐heating effect (SHE) in silicon nanowire GAA FETs by technology computer‐aided design with the modified channel conductivity is analyzed. The results suggest that silicon nanowires with the [110] transport direction are more suitable for device design.
在 3 纳米技术节点及以后的硅全栅（GAA）场效应晶体管（FET）中，热管理变得越来越重要。沟道热导率与块硅有很大不同。精确测定热导率对于器件评估和优化至关重要。本研究调查了硅纳米线的热导率，考察了尺寸和沟道取向之间复杂的相互作用。采用传统的非平衡分子动力学 (NEMD) 方法和原子尺度的标准 Stillinger-Weber 电位。结果表明，硅纳米线沿[100]方向的热导率随长度（L）和横截面边长（D）的增加而单调增加。相反，由于声光声子散射增加，[110] 方向的热导率随 D 呈现非单调变化。对于具有 L = 20 nm 和 D = 5 nm 硅纳米线通道的 GAA FET 器件，NEMD 计算得出 [100] 方向的热导率为 10.8 W m-K-1，[110] 方向的热导率为 25.3 W m-K-1。随后，通过计算机辅助设计技术分析了硅纳米线 GAA FET 中的自热效应 (SHE)。结果表明，具有 [110] 传输方向的硅纳米线更适合器件设计。
{"title":"Geometric Variability‐Aware Thermal Characteristics Modeling of Nanoscale Silicon Gate‐All‐around Nanowire Transistor","authors":"Xiaoyue Feng, Kun Luo, Guohui Zhan, Lijun Xu, Qinzhi Xu, Zhenhua Wu","doi":"10.1002/pssa.202400435","DOIUrl":"https://doi.org/10.1002/pssa.202400435","url":null,"abstract":"Thermal management becomes increasingly important in silicon gate‐all‐around (GAA) field‐effect transistor (FETs) for 3 nm technology node and beyond. The channel thermal conductivity significantly differs from bulk silicon. Precise determination of thermal conductivity is crucial for device evaluation and optimization. This study investigates the thermal conductivity of silicon nanowires, examining the complex interplay between size and channel orientation. The conventional nonequilibrium molecular dynamics (NEMD) method is used with the standard Stillinger–Weber potential at the atomic scale. The results indicate that the thermal conductivity of silicon nanowires along the [100] direction increases monotonically with both length (L) and cross‐sectional side length (D). Conversely, the [110] direction exhibits nonmonotonic variation in thermal conductivity with D, due to increased acoustic–optic phonon scattering. For GAA FET devices with a silicon nanowire channel of <jats:italic>L</jats:italic> = 20 nm and <jats:italic>D</jats:italic> = 5 nm, the NEMD calculations yield thermal conductivities of 10.8 W m·K<jats:sup>−1</jats:sup> for the [100] direction and 25.3 W m·K<jats:sup>−1</jats:sup> for the [110] direction. Subsequently, the self‐heating effect (SHE) in silicon nanowire GAA FETs by technology computer‐aided design with the modified channel conductivity is analyzed. The results suggest that silicon nanowires with the [110] transport direction are more suitable for device design.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"82 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Harry J. Whitlow, Gyula Nagy, Andrej Kuznetsov, Robert J.W. Frost, Alexander Azarov, Karen M. Smith, Sumittra Amphalop, Wimonrut Insuan, Sakulchit Wichianchot, Min‐Quin Ren, Thomas Osipowicz, Chris G. Ryan, Wanwisa Sudprasert, Francois Villinger
Physiologically relevant concentrations in biological tissue, in the in vivo, state are of the order of μmol L−1 and mmol L−1. Up to the present, mapping the major elements in the matrix and its thickness has been neglected, despite their importance for quantification of lesser and trace element concentrations. Ryan and Jamieson's dynamic analysis, statistical spectral decomposition approach, is developed to quantitatively measure ex vivo tissue sections cut using a cryomicrotome. This mitigates the problem that physical analysis methods require a vacuum environment. This approach is used to quantitatively image the major matrix elements H, C, N, and O as well as trace maps of Ca, Fe, and Zn in a tissue section of porcine intestine. This sample is selected as it exhibits a complex morphology with multiple tissue compartments (such as muscle and mucosa, as well as void areas from blood vessels, lymph ducts, sinuses crypts, and villi. In the results, it is demonstrated that different tissue types can have a different matrix composition and thickness. Using this information, quantitative maps and elemental molarities for the lesser and trace elements Ca, Fe, and Zn are obtained.
生物组织在体内状态下的生理相关浓度为微摩尔升/升或毫摩尔升/升。尽管基质中的主要元素及其厚度对较少元素和痕量元素浓度的量化非常重要，但迄今为止，基质中主要元素及其厚度的绘图一直被忽视。Ryan 和 Jamieson 开发的动态分析、统计光谱分解方法可对使用冷冻显微切片机切割的活体组织切片进行定量测量。这缓解了物理分析方法需要真空环境的问题。该方法用于对猪肠组织切片中的主要基质元素 H、C、N 和 O 以及钙、铁和锌的痕量图进行定量成像。之所以选择该样本，是因为其形态复杂，具有多个组织区划（如肌肉和粘膜，以及来自血管、淋巴管、窦隐窝和绒毛的空隙区域）。研究结果表明，不同类型的组织会有不同的基质成分和厚度。利用这些信息，可以获得较少元素和微量元素钙、铁和锌的定量图谱和元素摩尔数。
{"title":"Major and Trace Element Composition Differences Revealed in Porcine Intestine by Dynamic Analysis and MeV Ion Microscopy","authors":"Harry J. Whitlow, Gyula Nagy, Andrej Kuznetsov, Robert J.W. Frost, Alexander Azarov, Karen M. Smith, Sumittra Amphalop, Wimonrut Insuan, Sakulchit Wichianchot, Min‐Quin Ren, Thomas Osipowicz, Chris G. Ryan, Wanwisa Sudprasert, Francois Villinger","doi":"10.1002/pssa.202400161","DOIUrl":"https://doi.org/10.1002/pssa.202400161","url":null,"abstract":"Physiologically relevant concentrations in biological tissue, in the in vivo, state are of the order of μmol L<jats:sup>−1</jats:sup> and mmol L<jats:sup>−1</jats:sup>. Up to the present, mapping the major elements in the matrix and its thickness has been neglected, despite their importance for quantification of lesser and trace element concentrations. Ryan and Jamieson's dynamic analysis, statistical spectral decomposition approach, is developed to quantitatively measure ex vivo tissue sections cut using a cryomicrotome. This mitigates the problem that physical analysis methods require a vacuum environment. This approach is used to quantitatively image the major matrix elements H, C, N, and O as well as trace maps of Ca, Fe, and Zn in a tissue section of porcine intestine. This sample is selected as it exhibits a complex morphology with multiple tissue compartments (such as muscle and mucosa, as well as void areas from blood vessels, lymph ducts, sinuses crypts, and villi. In the results, it is demonstrated that different tissue types can have a different matrix composition and thickness. Using this information, quantitative maps and elemental molarities for the lesser and trace elements Ca, Fe, and Zn are obtained.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"22 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effect of Nb doping concentration (0, 1, 2, and 4 at. %) on donor defect‐induced ferromagnetism in ZnO thin films is investigated. The films are deposited on Si(111) substrates utilizing the radio frequency magnetron sputtering. X‐ray diffraction pattern unveils that the films show a pronounced orientation along the (002) direction. The relative intensities of defect‐related bands with that of the ultraviolet band from photoluminescence (PL) spectra show that 2 at. % Nb doping results in a greater number of donor defects (Zni+ and VO+) in the ZnO lattice. The parameters extracted from the electron paramagnetic resonance spectra follow a similar trend. The results from vibrating sample magnetometer measurement indicate that pure ZnO displays diamagnetic nature, whereas Nb‐doped ZnO exhibits a ferromagnetic nature. The saturation magnetization value is found highest for 2 at. % Nb doping, which correlates with the presence of a greater number of donor defects, as supported by the PL and electron paramagnetic resonance results. Images obtained from atomic force microscopy show that the surface roughness of the ZnO thin film reduces upon Nb doping. X‐ray photoelectron spectroscopy validates that Nb is doped in 2 at. % Nb‐doped ZnO thin film with Nb oxidation state of +5.
{"title":"Donor Defect Induced Ferromagnetism in Nb‐Doped ZnO Thin Films Grown by RF Magnetron Sputtering","authors":"Arya Sukumaran, Nammalvar Gopalakrishnan","doi":"10.1002/pssa.202400219","DOIUrl":"https://doi.org/10.1002/pssa.202400219","url":null,"abstract":"The effect of Nb doping concentration (0, 1, 2, and 4 at. %) on donor defect‐induced ferromagnetism in ZnO thin films is investigated. The films are deposited on Si(111) substrates utilizing the radio frequency magnetron sputtering. X‐ray diffraction pattern unveils that the films show a pronounced orientation along the (002) direction. The relative intensities of defect‐related bands with that of the ultraviolet band from photoluminescence (PL) spectra show that 2 at. % Nb doping results in a greater number of donor defects (Zn<jats:sub><jats:italic>i</jats:italic></jats:sub><jats:sup>+</jats:sup> and <jats:italic>V</jats:italic><jats:sub>O</jats:sub><jats:sup>+</jats:sup>) in the ZnO lattice. The parameters extracted from the electron paramagnetic resonance spectra follow a similar trend. The results from vibrating sample magnetometer measurement indicate that pure ZnO displays diamagnetic nature, whereas Nb‐doped ZnO exhibits a ferromagnetic nature. The saturation magnetization value is found highest for 2 at. % Nb doping, which correlates with the presence of a greater number of donor defects, as supported by the PL and electron paramagnetic resonance results. Images obtained from atomic force microscopy show that the surface roughness of the ZnO thin film reduces upon Nb doping. X‐ray photoelectron spectroscopy validates that Nb is doped in 2 at. % Nb‐doped ZnO thin film with Nb oxidation state of +5.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"6 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lyudmyla Khirunenko, Mykhailo Sosnin, Andrii Duvanskii, Nikolay Abrosimov
In this study, the new data concerning the electronic and vibrational properties of the BsO2i* defect in Czochralski‐grown boron‐doped silicon are reported. In silicon subjected to treatment at elevated temperatures, a new boron‐related defect is detected. An additional intracenter electronic transition for boron associated with the revealed defect is observed. The defect is identified as BsO2i due to the linear dependence of its formation efficiency on the boron content and the quadratic dependence on the oxygen concentration. The revealed complex is formed synchronously with the annealing of the previously identified BsO2i* defect. The detected complex is formed as a result of temperature transformation of the atomic configuration of the BsO2i* defect. The transformation occurs with activation energy of 2.59 eV. The local vibrational modes associated with both configurations of the BsO2i* complex are identified. The results of the study suggest that the BsO2i* defect in both configurations exists in a wide temperature interval, impacts the optical and electronic properties of the material, and must be taken into consideration when developing Si:B‐based devices.
{"title":"Temperature‐Induced Transformation of the Atomic Configuration of the BO2* Defect in Boron‐Doped Czochralski Si","authors":"Lyudmyla Khirunenko, Mykhailo Sosnin, Andrii Duvanskii, Nikolay Abrosimov","doi":"10.1002/pssa.202400484","DOIUrl":"https://doi.org/10.1002/pssa.202400484","url":null,"abstract":"In this study, the new data concerning the electronic and vibrational properties of the B<jats:sub>s</jats:sub>O<jats:sub>2i</jats:sub>* defect in Czochralski‐grown boron‐doped silicon are reported. In silicon subjected to treatment at elevated temperatures, a new boron‐related defect is detected. An additional intracenter electronic transition for boron associated with the revealed defect is observed. The defect is identified as B<jats:sub>s</jats:sub>O<jats:sub>2i</jats:sub> due to the linear dependence of its formation efficiency on the boron content and the quadratic dependence on the oxygen concentration. The revealed complex is formed synchronously with the annealing of the previously identified B<jats:sub>s</jats:sub>O<jats:sub>2i</jats:sub>* defect. The detected complex is formed as a result of temperature transformation of the atomic configuration of the B<jats:sub>s</jats:sub>O<jats:sub>2i</jats:sub>* defect. The transformation occurs with activation energy of 2.59 eV. The local vibrational modes associated with both configurations of the B<jats:sub>s</jats:sub>O<jats:sub>2i</jats:sub>* complex are identified. The results of the study suggest that the B<jats:sub>s</jats:sub>O<jats:sub>2i</jats:sub>* defect in both configurations exists in a wide temperature interval, impacts the optical and electronic properties of the material, and must be taken into consideration when developing Si:B‐based devices.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"6 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142192454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, a DC and microwave performance of 2 μm gate length AlGaN/GaN high‐electron‐mobility transistor (HEMTs) on a Mn‐doped GaN substrate is demonstrated. The maximum drain current is 670 mA with a threshold voltage of 2.5 V and with good pinch‐off characteristics. The breakdown voltage of the HEMT is ≈80 V. The HEMT shows Δ8% current collapse while referenced HEMT on a SiC substrates which is fabricated simultaneously shows large Δ30% current collapse. When the HEMT with a gate width of 100 μm is tuned for the maximum output power at 2.4 GHz with a drain voltage of 30 V, it delivers 500 mW (5 W mm−1) with the maximum drain efficiency of 54%. These output performances are in good agreement with ideal class‐A operation performance. Therefore, it is concluded that the HEMT on Mn‐doped GaN substrates is promising for future microwave and millimeter‐wave high‐power transistors.
{"title":"Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate","authors":"Tomoharu Sugino, Kenji Osaki, Kentaro Nonaka, Tomohiko Sugiyama, Yoshitaka Kuraoka, Akio Wakejima","doi":"10.1002/pssa.202400057","DOIUrl":"https://doi.org/10.1002/pssa.202400057","url":null,"abstract":"Herein, a DC and microwave performance of 2 μm gate length AlGaN/GaN high‐electron‐mobility transistor (HEMTs) on a Mn‐doped GaN substrate is demonstrated. The maximum drain current is 670 mA with a threshold voltage of 2.5 V and with good pinch‐off characteristics. The breakdown voltage of the HEMT is ≈80 V. The HEMT shows Δ8% current collapse while referenced HEMT on a SiC substrates which is fabricated simultaneously shows large Δ30% current collapse. When the HEMT with a gate width of 100 μm is tuned for the maximum output power at 2.4 GHz with a drain voltage of 30 V, it delivers 500 mW (5 W mm<jats:sup>−1</jats:sup>) with the maximum drain efficiency of 54%. These output performances are in good agreement with ideal class‐A operation performance. Therefore, it is concluded that the HEMT on Mn‐doped GaN substrates is promising for future microwave and millimeter‐wave high‐power transistors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"25 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pierre Lorenz, Joachim Zajadacz, Andriy Lotnyk, Jürgen W. Gerlach, Martin Ehrhardt, Robert Kirchner, Klaus Zimmer
{"title":"Fabrication of Plasmonic Microcubes by Laser Ablation of Au‐Nanoparticles‐Loaded Acrylate","authors":"Pierre Lorenz, Joachim Zajadacz, Andriy Lotnyk, Jürgen W. Gerlach, Martin Ehrhardt, Robert Kirchner, Klaus Zimmer","doi":"10.1002/pssa.202470029","DOIUrl":"https://doi.org/10.1002/pssa.202470029","url":null,"abstract":"","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"23 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yu Cheng, FangChao Long, Oliver Steuer, Nikol Lambeva, Florian Bärwolf, Jens Zscharschuch, Artur Erbe, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal
P‐type hyperdoped germanium (Ge) has attracted significant attention for the development of superconducting semiconductors. However, the limited solid solubility of acceptors, especially boron (B), in Ge makes hyperdoping challenging. Herein, a systematic study on the electrical properties of boron‐implanted germanium is presented with an atomic concentration beyond 10 at%. The B‐implanted Ge was annealed by millisecond flash lamp annealing (ms‐FLA) with different parameters. The results indicate that millisecond solid phase epitaxy ensures the electrical activation of B much above the solubility limit with hole concentration as high as 2 × 1021 cm−3 and low‐temperature sheet resistance of 13 Ω sq−1 which is promising for superconductivity. It is also shown that millisecond annealing effectively suppresses the B diffusion and provides much higher activation efficiency of acceptors compared to conventional annealing methods.
P 型超掺杂锗（Ge）在超导半导体的发展中备受关注。然而，受体（尤其是硼（B））在锗中的固溶性有限，这使得超掺杂具有挑战性。本文系统研究了原子浓度超过 10% 的硼植入锗的电学特性。采用毫秒闪灯退火法（ms-FLA）对硼植入锗进行了退火，并设置了不同的参数。结果表明，毫秒固相外延可确保硼的电活化远高于溶解极限，空穴浓度高达 2 × 1021 cm-3，低温薄片电阻为 13 Ω sq-1，有望实现超导。研究还表明，与传统退火方法相比，毫秒退火能有效抑制 B 扩散，并提供更高的受体活化效率。
{"title":"Milliseconds Thermal Processing of Boron Hyperdoped Germanium","authors":"Yu Cheng, FangChao Long, Oliver Steuer, Nikol Lambeva, Florian Bärwolf, Jens Zscharschuch, Artur Erbe, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal","doi":"10.1002/pssa.202400260","DOIUrl":"https://doi.org/10.1002/pssa.202400260","url":null,"abstract":"P‐type hyperdoped germanium (Ge) has attracted significant attention for the development of superconducting semiconductors. However, the limited solid solubility of acceptors, especially boron (B), in Ge makes hyperdoping challenging. Herein, a systematic study on the electrical properties of boron‐implanted germanium is presented with an atomic concentration beyond 10 at%. The B‐implanted Ge was annealed by millisecond flash lamp annealing (ms‐FLA) with different parameters. The results indicate that millisecond solid phase epitaxy ensures the electrical activation of B much above the solubility limit with hole concentration as high as 2 × 10<jats:sup>21</jats:sup> cm<jats:sup>−3</jats:sup> and low‐temperature sheet resistance of 13 Ω sq<jats:sup>−1</jats:sup> which is promising for superconductivity. It is also shown that millisecond annealing effectively suppresses the B diffusion and provides much higher activation efficiency of acceptors compared to conventional annealing methods.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"60 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jörn Bonse, Irina Alexandra Paun, Johannes Heitz, Razvan Stoian
{"title":"Making Light Matter","authors":"Jörn Bonse, Irina Alexandra Paun, Johannes Heitz, Razvan Stoian","doi":"10.1002/pssa.202400528","DOIUrl":"https://doi.org/10.1002/pssa.202400528","url":null,"abstract":"","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"63 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141941498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Niharika Maley, Ram K. Gupta, Ghulam Abbas Ashraf, Essam A. Al‐Ammar
Using single‐source precursor route, this work reports the synthesis of the novel chalcogenide heterosystem, i.e., BaS:CoS:La2S3 trichalcogenide heterosystem. With the narrowed band gap energy, BaS:CoS:La2S3 expresses excellent photonic response with 3.47 eV of tailored band gap resulting from chemical synergism. This chalcogenide is marked by superior crystallinity and possessed an average crystallite size of 18.29 nm. Morphologically, BaS:CoS:La2S3 exists in the form of the roughly spherical grains arranged in the irregular manner. The developed chalcogenide is assessed for charge storage by fabricating the electrode using a nickel form as a support. In a 0.1 m KOH background electrolyte, the BaS:CoS:La2S3 adorns electrode excelled in achieving a specific capacitance of 967.24 F g−1. In addition, this trichalcogenide expresses the specific power density of 1659 W kg−1. Fabricated electrode retains original capacitance after different cycles. Regarding electrode–electrolyte interactions, the fabricated electrode shows minimal resistance, with an equivalent series resistance (Rs) of 1.42 Ω as indicated by impedance studies. Additional circuit elements, including CPE (Yo = 2.17 × 10−04, n = 0.71) and Rct (6.97 Ω cm−2), are obtained after circuit fitting for the BaS:CoS:La2S3 trichalcogenide decorated electrode. Exhibiting stable behavior for 43 h, the synthesized material demonstrates profound durability and functionality.
本研究报告采用单源前驱体路线合成了新型的三卤化合金异质系统，即 BaS:CoS:La2S3 三卤化合金异质系统。由于化学协同作用，BaS:CoS:La2S3 的带隙能量变窄，从而产生了 3.47 eV 的定制带隙，表现出卓越的光子响应。这种钙化物具有优异的结晶性，平均结晶尺寸为 18.29 nm。从形态上看，BaS:CoS:La2S3 以不规则排列的大致球形晶粒形式存在。通过使用镍作为支撑物制造电极，对所开发的钙化物进行了电荷存储评估。在 0.1 m KOH 背景电解液中，BaS:CoS:La2S3 装饰电极的比电容达到了 967.24 F g-1。此外，这种三钙化物的比功率密度为 1659 W kg-1。制作的电极在不同周期后仍能保持原有电容。关于电极与电解质之间的相互作用，根据阻抗研究，制作的电极显示出最小的电阻，等效串联电阻（Rs）为 1.42 Ω。在对 BaS:CoS:La2S3 三卤化物装饰电极进行电路拟合后，还得到了其他电路元素，包括 CPE（Yo = 2.17 × 10-04，n = 0.71）和 Rct（6.97 Ω cm-2）。合成材料在 43 小时内表现稳定，显示出极强的耐久性和功能性。
{"title":"High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La2S3 Trichalcogenide Semiconductor","authors":"Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Niharika Maley, Ram K. Gupta, Ghulam Abbas Ashraf, Essam A. Al‐Ammar","doi":"10.1002/pssa.202400217","DOIUrl":"https://doi.org/10.1002/pssa.202400217","url":null,"abstract":"Using single‐source precursor route, this work reports the synthesis of the novel chalcogenide heterosystem, i.e., BaS:CoS:La<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> trichalcogenide heterosystem. With the narrowed band gap energy, BaS:CoS:La<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> expresses excellent photonic response with 3.47 eV of tailored band gap resulting from chemical synergism. This chalcogenide is marked by superior crystallinity and possessed an average crystallite size of 18.29 nm. Morphologically, BaS:CoS:La<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> exists in the form of the roughly spherical grains arranged in the irregular manner. The developed chalcogenide is assessed for charge storage by fabricating the electrode using a nickel form as a support. In a 0.1 <jats:sc>m</jats:sc> KOH background electrolyte, the BaS:CoS:La<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> adorns electrode excelled in achieving a specific capacitance of 967.24 F g<jats:sup>−1</jats:sup>. In addition, this trichalcogenide expresses the specific power density of 1659 W kg<jats:sup>−1</jats:sup>. Fabricated electrode retains original capacitance after different cycles. Regarding electrode–electrolyte interactions, the fabricated electrode shows minimal resistance, with an equivalent series resistance (<jats:italic>R</jats:italic><jats:sub>s</jats:sub>) of 1.42 Ω as indicated by impedance studies. Additional circuit elements, including CPE (<jats:italic>Y</jats:italic><jats:sub>o</jats:sub> = 2.17 × 10<jats:sup>−04</jats:sup>, <jats:italic>n</jats:italic> = 0.71) and <jats:italic>R</jats:italic><jats:sub>ct</jats:sub> (6.97 Ω cm<jats:sup>−2</jats:sup>), are obtained after circuit fitting for the BaS:CoS:La<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> trichalcogenide decorated electrode. Exhibiting stable behavior for 43 h, the synthesized material demonstrates profound durability and functionality.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"24 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141880865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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