Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930973
Zhiyong Xia, J. Qahouq
An online method of measuring battery AC impedance spectrum is presented in this paper. By adding a square wave perturbation to the steady-state value of the duty cycle of a boost power converter, AC impendence values can be devised from the responses of the battery voltage and current at the odd harmonics of the perturbation frequency. FFT analysis is applied to battery voltage and current to obtain the harmonic components, then the harmonic components of battery voltage and current can be used to calculate the battery AC impedance at these odd harmonics of perturbation frequency. The battery AC impedance measurement method of this paper allows for the measurement of battery impedance at several different frequencies in one single perturbation period. An experimental laboratory prototype is constructed to verify and validate the proposed online battery AC impedance spectrum measurement method.
{"title":"Method for online battery AC impedance spectrum measurement using dc-dc power converter duty-cycle control","authors":"Zhiyong Xia, J. Qahouq","doi":"10.1109/APEC.2017.7930973","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930973","url":null,"abstract":"An online method of measuring battery AC impedance spectrum is presented in this paper. By adding a square wave perturbation to the steady-state value of the duty cycle of a boost power converter, AC impendence values can be devised from the responses of the battery voltage and current at the odd harmonics of the perturbation frequency. FFT analysis is applied to battery voltage and current to obtain the harmonic components, then the harmonic components of battery voltage and current can be used to calculate the battery AC impedance at these odd harmonics of perturbation frequency. The battery AC impedance measurement method of this paper allows for the measurement of battery impedance at several different frequencies in one single perturbation period. An experimental laboratory prototype is constructed to verify and validate the proposed online battery AC impedance spectrum measurement method.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123456222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930873
A. Moghadasi, A. Sargolzaei, M. Moghaddami, A. Sarwat, K. Yen
The concept of the module-integrated converters (MICs) incorporated in photovoltaic (PV) has recently imbibed a significant attention due to advantages such as low cost of mass production, high efficiency, easier installation, and improved energy harvest. This paper presents the current-source inverter (CSI) with dc voltage boost capability, called single-stage power conversion system, for grid-tied three-phase PV MIC systems. A reliable control system is adopted to modulate the proposed topology in such a way that provides both active and reactive power in order to meet power system needs. To reduce the number of actives switches, the topology utilizes the modified switching pattern based on conventional space vector pulse width modulation (SVPWM) method. It is demonstrated that the injected active and reactive power can be controlled through two modulation indices introduced in the modified SVPWM switching algorithm. The proposed structure is implemented in hardware and experimentally tested with 300-W laboratory prototype. The results verify the desired performance and robustness of the proposed control scheme for exchanging of both active and reactive powers between the PV MIC and the grid within different operating conditions.
{"title":"Active and reactive power control method for three-phase PV module-integrated converter based on a single-stage inverter","authors":"A. Moghadasi, A. Sargolzaei, M. Moghaddami, A. Sarwat, K. Yen","doi":"10.1109/APEC.2017.7930873","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930873","url":null,"abstract":"The concept of the module-integrated converters (MICs) incorporated in photovoltaic (PV) has recently imbibed a significant attention due to advantages such as low cost of mass production, high efficiency, easier installation, and improved energy harvest. This paper presents the current-source inverter (CSI) with dc voltage boost capability, called single-stage power conversion system, for grid-tied three-phase PV MIC systems. A reliable control system is adopted to modulate the proposed topology in such a way that provides both active and reactive power in order to meet power system needs. To reduce the number of actives switches, the topology utilizes the modified switching pattern based on conventional space vector pulse width modulation (SVPWM) method. It is demonstrated that the injected active and reactive power can be controlled through two modulation indices introduced in the modified SVPWM switching algorithm. The proposed structure is implemented in hardware and experimentally tested with 300-W laboratory prototype. The results verify the desired performance and robustness of the proposed control scheme for exchanging of both active and reactive powers between the PV MIC and the grid within different operating conditions.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117233715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents an integrated solution of flexible DC-DC converter by embedding a flexible polyimide printed circuit (FPC) board and an inductor made of flexible ferrite-polymer composite in a wire. The cooper in the wire is utilized as the winding to make the embedded inductor with flexible ferrite-polymer sheets. Different wire shapes of the inductor are simulated and compared to optimize the design. A step-up prototype is fabricated and corresponding tests are executed to verify the performance. The flexible wire-embedded converter can output 5V-1W with variational input, and achieve 70% efficiency.
{"title":"A wire-embedded converter used for wearable devices","authors":"Mofan Tian, Naizeng Wang, Kangping Wang, Haiyang Jia, Zhenwei Li, Xu Yang, Laili Wang","doi":"10.1109/APEC.2017.7930682","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930682","url":null,"abstract":"This paper presents an integrated solution of flexible DC-DC converter by embedding a flexible polyimide printed circuit (FPC) board and an inductor made of flexible ferrite-polymer composite in a wire. The cooper in the wire is utilized as the winding to make the embedded inductor with flexible ferrite-polymer sheets. Different wire shapes of the inductor are simulated and compared to optimize the design. A step-up prototype is fabricated and corresponding tests are executed to verify the performance. The flexible wire-embedded converter can output 5V-1W with variational input, and achieve 70% efficiency.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128606007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931202
A. Shahabi, A. Lemmon, Sujit Banerjee, K. Matocha
This work presents a novel modeling procedure for SiC power MOSFETs based on the principal concerns of an application designer. The main emphasis of this work is to identify the top priorities of a model suitable for designing power electronics applications and to utilize this knowledge to develop an optimized, empirically-validated model. This paper provides several contributions to the rapidly-advancing field of SiC MOSFET modeling. First, the switching characteristics of SiC MOSFET's are studied and particular regions of the I-V space are identified which dominate the transient behavior of the device under inductively-loaded conditions. Second, a sub-circuit-based model topology is proposed, which balances the need for accuracy against the application designer's need for computational efficiency. Third, a MATLAB-based tuning procedure is introduced that leverages a powerful optimization algorithm and automatically invokes the SPICE environment to generate model output for tuning and validation purposes. Fourth, empirical validation of the developed model is provided by comparison of the transient model output with double-pulse test results. The outcome of this work is a simple and computationally-efficient model for 1.2 kV SiC MOSFET's which nevertheless maintains sufficient accuracy to satisfy the needs of power electronics application designers.
本文基于应用设计者的主要关注点，提出了一种新颖的SiC功率mosfet建模方法。这项工作的主要重点是确定适合设计电力电子应用的模型的优先级，并利用这些知识开发优化的，经验验证的模型。本文为快速发展的SiC MOSFET建模领域提供了一些贡献。首先，研究了SiC MOSFET的开关特性，并确定了在电感负载条件下控制器件瞬态行为的特定I-V空间区域。其次，提出了一种基于子电路的模型拓扑，它平衡了对精度的需求和应用设计者对计算效率的需求。第三，介绍了基于matlab的调优过程，该过程利用强大的优化算法并自动调用SPICE环境来生成用于调优和验证目的的模型输出。第四，通过瞬态模型输出与双脉冲试验结果的比较，对所建立的模型进行了实证验证。这项工作的结果是一个简单和计算效率高的1.2 kV SiC MOSFET模型，但仍保持足够的精度，以满足电力电子应用设计人员的需求。
{"title":"Application-focused modeling procedure for 1.2kV SiC MOSFET's","authors":"A. Shahabi, A. Lemmon, Sujit Banerjee, K. Matocha","doi":"10.1109/APEC.2017.7931202","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931202","url":null,"abstract":"This work presents a novel modeling procedure for SiC power MOSFETs based on the principal concerns of an application designer. The main emphasis of this work is to identify the top priorities of a model suitable for designing power electronics applications and to utilize this knowledge to develop an optimized, empirically-validated model. This paper provides several contributions to the rapidly-advancing field of SiC MOSFET modeling. First, the switching characteristics of SiC MOSFET's are studied and particular regions of the I-V space are identified which dominate the transient behavior of the device under inductively-loaded conditions. Second, a sub-circuit-based model topology is proposed, which balances the need for accuracy against the application designer's need for computational efficiency. Third, a MATLAB-based tuning procedure is introduced that leverages a powerful optimization algorithm and automatically invokes the SPICE environment to generate model output for tuning and validation purposes. Fourth, empirical validation of the developed model is provided by comparison of the transient model output with double-pulse test results. The outcome of this work is a simple and computationally-efficient model for 1.2 kV SiC MOSFET's which nevertheless maintains sufficient accuracy to satisfy the needs of power electronics application designers.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132504652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931208
A. Paredes, H. Ghorbani, V. Sala, E. Fernandez, L. Romeral
This paper introduces a novel active gate driver (AGD) for switching control of the silicon carbide (SiC) MOSFETs. The new gate driver improves the current and voltage profiles by suppression of the overshoot problems. The main innovation of the proposed AGD is the modification of gate-source voltage slope in two stages for both turn-on and turn-off transitions with a simple closed-loop control, which directly implies to the control of di/dt and dv/dt. The new gate driver is validated by experimental results. Moreover, an analysis of performance and electromagnetic interference (EMI) is realized. The experimental tests have been developed with 100 kHz of switching frequency and 200 V of dc-bus, in hard-switching conditions. The results show that the proposed AGD can reduce EMI problems with a minimum side effect on the efficiency of the SiC MOSFETs.
{"title":"A new active gate driver for improving the switching performance of SiC MOSFET","authors":"A. Paredes, H. Ghorbani, V. Sala, E. Fernandez, L. Romeral","doi":"10.1109/APEC.2017.7931208","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931208","url":null,"abstract":"This paper introduces a novel active gate driver (AGD) for switching control of the silicon carbide (SiC) MOSFETs. The new gate driver improves the current and voltage profiles by suppression of the overshoot problems. The main innovation of the proposed AGD is the modification of gate-source voltage slope in two stages for both turn-on and turn-off transitions with a simple closed-loop control, which directly implies to the control of di/dt and dv/dt. The new gate driver is validated by experimental results. Moreover, an analysis of performance and electromagnetic interference (EMI) is realized. The experimental tests have been developed with 100 kHz of switching frequency and 200 V of dc-bus, in hard-switching conditions. The results show that the proposed AGD can reduce EMI problems with a minimum side effect on the efficiency of the SiC MOSFETs.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130886639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930794
Di Han, Silong Li, Woongkul Lee, W. Choi, B. Sarlioglu
Due to low loss and fast switching capabilities of gallium nitride (GaN) based power devices; there has been a strong interest in the replacement of silicon (Si) devices in power electronics converters for various applications. However, one of the concerns is that the high switching speed (dv/dt and di/dt) of GaN devices will deteriorate the EMI emission of power converters. Hence, this paper studies the common mode EMI emission of GaN based devices by taking a synchronous boost converter as a case study. It will be shown that, exploiting the full switching speed of GaN devices increases the EMI in very high frequency range by up to 10dB comparing to a Si counterpart, while slowing down the switching transition completely offsets the advantage on switching loss. Based on the above observation, two solutions are proposed to mitigate EMI generation of GaN converter without compromising its benefits on low switching loss.
{"title":"Trade-off between switching loss and common mode EMI generation of GaN devices-analysis and solution","authors":"Di Han, Silong Li, Woongkul Lee, W. Choi, B. Sarlioglu","doi":"10.1109/APEC.2017.7930794","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930794","url":null,"abstract":"Due to low loss and fast switching capabilities of gallium nitride (GaN) based power devices; there has been a strong interest in the replacement of silicon (Si) devices in power electronics converters for various applications. However, one of the concerns is that the high switching speed (dv/dt and di/dt) of GaN devices will deteriorate the EMI emission of power converters. Hence, this paper studies the common mode EMI emission of GaN based devices by taking a synchronous boost converter as a case study. It will be shown that, exploiting the full switching speed of GaN devices increases the EMI in very high frequency range by up to 10dB comparing to a Si counterpart, while slowing down the switching transition completely offsets the advantage on switching loss. Based on the above observation, two solutions are proposed to mitigate EMI generation of GaN converter without compromising its benefits on low switching loss.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131357362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931112
Zichao Ye, Y. Lei, Wen-Chuen Liu, P. Shenoy, R. Pilawa-Podgurski
A major challenge in the implementation of flying capacitor multi-level (FCML) converters is providing power to the gate drive circuits. A common method is to use isolated DC/DC converters, which are bulky, expensive and energy inefficient. This work discusses the design and implementation of an alternative gate drive power supply circuit, which utilizes three techniques termed cascaded bootstrap, double charge pump and gate-driven charge pump. These techniques leverage the inherent properties of GaN switches and the FCML topology to transfer power to floating switches, and can be implemented with capacitors and diodes only. Experimental results show that the proposed circuit can cut the size of the power stage of a state-of-the-art 7-level FCML converter by half, at 1/6 of the cost.
{"title":"Design and implementation of a low-cost and compact floating gate drive power circuit for GaN-based flying capacitor multi-level converters","authors":"Zichao Ye, Y. Lei, Wen-Chuen Liu, P. Shenoy, R. Pilawa-Podgurski","doi":"10.1109/APEC.2017.7931112","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931112","url":null,"abstract":"A major challenge in the implementation of flying capacitor multi-level (FCML) converters is providing power to the gate drive circuits. A common method is to use isolated DC/DC converters, which are bulky, expensive and energy inefficient. This work discusses the design and implementation of an alternative gate drive power supply circuit, which utilizes three techniques termed cascaded bootstrap, double charge pump and gate-driven charge pump. These techniques leverage the inherent properties of GaN switches and the FCML topology to transfer power to floating switches, and can be implemented with capacitors and diodes only. Experimental results show that the proposed circuit can cut the size of the power stage of a state-of-the-art 7-level FCML converter by half, at 1/6 of the cost.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128836731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931000
L. Schrittwieser, M. Leibl, Haider Michael, Friedrich Thony, J. W. Kolar, T. Soeiro
DC power distribution systems for data centers, industrial applications and residential areas are expected to provide higher efficiency, reliability and lower cost compared to ac systems. Accordingly they have been an important research topic in recent years. In these applications an efficient power factor correction rectifier, supplying a dc distribution bus from the conventional three-phase ac mains is typically required. This paper analyzes the three-phase buck-type unity power factor SWISS Rectifier showing that its input current THD can be improved significantly by interleaving. The dc output filter is implemented using a current compensated Integrated Common Mode Coupled Inductor which ensures equal current sharing between interleaved half bridges and provides common mode inductance. Based on the analysis an high efficient 8 kW, 4 kW dm−3 (64 Win−3) lab-scale prototype converter is designed using SiC MOSFETS. Measurements taken on a hardware prototype confirm a full power efficiency of 99.16 % and a peak efficiency of 99.26 %.
{"title":"99.3% Efficient three-phase buck-type all-SiC SWISS Rectifier for DC distribution systems","authors":"L. Schrittwieser, M. Leibl, Haider Michael, Friedrich Thony, J. W. Kolar, T. Soeiro","doi":"10.1109/APEC.2017.7931000","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931000","url":null,"abstract":"DC power distribution systems for data centers, industrial applications and residential areas are expected to provide higher efficiency, reliability and lower cost compared to ac systems. Accordingly they have been an important research topic in recent years. In these applications an efficient power factor correction rectifier, supplying a dc distribution bus from the conventional three-phase ac mains is typically required. This paper analyzes the three-phase buck-type unity power factor SWISS Rectifier showing that its input current THD can be improved significantly by interleaving. The dc output filter is implemented using a current compensated Integrated Common Mode Coupled Inductor which ensures equal current sharing between interleaved half bridges and provides common mode inductance. Based on the analysis an high efficient 8 kW, 4 kW dm−3 (64 Win−3) lab-scale prototype converter is designed using SiC MOSFETS. Measurements taken on a hardware prototype confirm a full power efficiency of 99.16 % and a peak efficiency of 99.26 %.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125492881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931170
Haofeng Bai, Xiongfei Wang, P. Loh, F. Blaabjerg
The output currents of high power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the backgroud harmonics in the grid voltage. In this paper, a hybrid power conversion system composed of a high power VSI with low switching frequency and an auxiliary series LC filtered VSI is proposed. The auxiliary VSI compensates both the switching harmonics of the high power VSI and the low order harmonics. The output current of the system remains sinusoidal when grid voltage is distorted. Impedance models of the system are built in different frequency ranges and harmonic interactions are analyzed within the system. Different control targets are obtained and the corresponding control strategies are proposed. Simulation and experimental results are provided to show the validity of the analysis and the performance of the proposed control strategy.
{"title":"Harmonic analysis and mitigation of low-frequency switching voltage source inverter with series LC filtered VSI","authors":"Haofeng Bai, Xiongfei Wang, P. Loh, F. Blaabjerg","doi":"10.1109/APEC.2017.7931170","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931170","url":null,"abstract":"The output currents of high power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the backgroud harmonics in the grid voltage. In this paper, a hybrid power conversion system composed of a high power VSI with low switching frequency and an auxiliary series LC filtered VSI is proposed. The auxiliary VSI compensates both the switching harmonics of the high power VSI and the low order harmonics. The output current of the system remains sinusoidal when grid voltage is distorted. Impedance models of the system are built in different frequency ranges and harmonic interactions are analyzed within the system. Different control targets are obtained and the corresponding control strategies are proposed. Simulation and experimental results are provided to show the validity of the analysis and the performance of the proposed control strategy.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123160712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930799
N. F. Javidi, M. Nymand, A. Forsyth
This paper presents a method for compensating phase shift error in high frequency loss measurement of powder magnetic cores. The common approach for measuring the loss in magnetic cores is B-H loop measurement where two windings are placed on the core under test. However, due to the low-permeability characteristic of powder core materials, phase shift error can cause noticeable error. Propagation delay in the voltage and current probes are the main sources of phase shift error in this measurement process. In this paper a compensation approach has been proposed for accurate loss measurement of these materials. In the proposed method, the voltage and current probe is time aligned with the compensated delay time to obtain the same loss that is expected from the datasheet. As a validation, experimental measurements have been performed using Kool Μμ 0077439A7. The results match very well with the analytical study.
{"title":"New method for error compensation in high frequency loss measurement of powder cores","authors":"N. F. Javidi, M. Nymand, A. Forsyth","doi":"10.1109/APEC.2017.7930799","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930799","url":null,"abstract":"This paper presents a method for compensating phase shift error in high frequency loss measurement of powder magnetic cores. The common approach for measuring the loss in magnetic cores is B-H loop measurement where two windings are placed on the core under test. However, due to the low-permeability characteristic of powder core materials, phase shift error can cause noticeable error. Propagation delay in the voltage and current probes are the main sources of phase shift error in this measurement process. In this paper a compensation approach has been proposed for accurate loss measurement of these materials. In the proposed method, the voltage and current probe is time aligned with the compensated delay time to obtain the same loss that is expected from the datasheet. As a validation, experimental measurements have been performed using Kool Μμ 0077439A7. The results match very well with the analytical study.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123816789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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