Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930851
Oscar Andrés Montes, Sungho Son, Soo-Seok Kim, Hwasoo Seok, J. S. Lee, Minsung Kim
In this paper, a quasi-resonant forward-flyback converter is proposed for photovoltaic power system. Since the output of forward-flyback converter is connected in series, the proposed circuit offers high-step up conversion. The quasi-resonant forward circuit that consists of a transformer leakage inductance and a resonant capacitor generates almost sinusoidal currents during the switch on-time so the primary switching stress has been significantly reduced. The flyback circuit transfers the energy stored in the magnetizing inductance to the load during the switch off-time. Design guidelines of the circuit parameters are presented. To verify the proposed circuit design, a 400-W experimental prototype has been designed, fabricated, and tested. Simulation and experimental results verify the effectiveness of the proposed circuit design.
{"title":"Forward-flyback resonant converter for high-efficient medium-power photovoltaic applications","authors":"Oscar Andrés Montes, Sungho Son, Soo-Seok Kim, Hwasoo Seok, J. S. Lee, Minsung Kim","doi":"10.1109/APEC.2017.7930851","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930851","url":null,"abstract":"In this paper, a quasi-resonant forward-flyback converter is proposed for photovoltaic power system. Since the output of forward-flyback converter is connected in series, the proposed circuit offers high-step up conversion. The quasi-resonant forward circuit that consists of a transformer leakage inductance and a resonant capacitor generates almost sinusoidal currents during the switch on-time so the primary switching stress has been significantly reduced. The flyback circuit transfers the energy stored in the magnetizing inductance to the load during the switch off-time. Design guidelines of the circuit parameters are presented. To verify the proposed circuit design, a 400-W experimental prototype has been designed, fabricated, and tested. Simulation and experimental results verify the effectiveness of the proposed circuit design.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131850693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930678
Runruo Chen, Paul Brohlin, D. Dapkus
This paper presents the design and magnetics optimization of 1-kW regulated LLC resonant converter with GaN FETs. By adopting the GaN FETs for primary side switches, the gate driver loss and turn-off loss are significantly reduced. A new structure of integrated transformer with stacked planar cores, shaped windings and synchronous rectifier MOSFET proposed to reduce the core loss and winding loss. The proposed integrated transformer has highly compact structure including transformer, resonant inductor, SR MOSFET and output capacitor. A regulated 1-kW LLC resonant converter prototype is designed and tested. The peak efficiency can reach 97.4%.
{"title":"Design and magnetics optimization of LLC resonant converter with GaN","authors":"Runruo Chen, Paul Brohlin, D. Dapkus","doi":"10.1109/APEC.2017.7930678","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930678","url":null,"abstract":"This paper presents the design and magnetics optimization of 1-kW regulated LLC resonant converter with GaN FETs. By adopting the GaN FETs for primary side switches, the gate driver loss and turn-off loss are significantly reduced. A new structure of integrated transformer with stacked planar cores, shaped windings and synchronous rectifier MOSFET proposed to reduce the core loss and winding loss. The proposed integrated transformer has highly compact structure including transformer, resonant inductor, SR MOSFET and output capacitor. A regulated 1-kW LLC resonant converter prototype is designed and tested. The peak efficiency can reach 97.4%.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133403413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931135
Yazhe Wang, Kosuke Yamaguchi, K. Watabe, Tomofumi Tanaka, M. Rogers, E. Motto
This paper presents a new intelligent power module (IPM) family dedicated for low power industrial inverter drive applications, especially for low cost and compact size requirements. The new IPM family integrates converter, inverter, brake and driver circuits into a compact, high reliable transfer-molded package with fine cell pitch Carrier Stored Trench-gate Bipolar Transistor (CSTBTTM) power chips, optimized internal layout and direct gate wire bond structure. As a result, the new IPM products achieved both high performance and small size. The inverter main driver circuit that utilizes the new IPM can achieve about 50% reduction on PCB size compare with those uses IGBT modules or discrete parts.
{"title":"A new multi-functional compact IPM for low power industrial application","authors":"Yazhe Wang, Kosuke Yamaguchi, K. Watabe, Tomofumi Tanaka, M. Rogers, E. Motto","doi":"10.1109/APEC.2017.7931135","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931135","url":null,"abstract":"This paper presents a new intelligent power module (IPM) family dedicated for low power industrial inverter drive applications, especially for low cost and compact size requirements. The new IPM family integrates converter, inverter, brake and driver circuits into a compact, high reliable transfer-molded package with fine cell pitch Carrier Stored Trench-gate Bipolar Transistor (CSTBTTM) power chips, optimized internal layout and direct gate wire bond structure. As a result, the new IPM products achieved both high performance and small size. The inverter main driver circuit that utilizes the new IPM can achieve about 50% reduction on PCB size compare with those uses IGBT modules or discrete parts.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117291464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931132
Fei Yang, Zhenxian Liang, Zhiqiang Wang, Fred Wang
In this paper, a low parasitic inductance SiC power module with double-sided cooling is designed and compared with a baseline double-sided cooled module. With the unique 3D layout utilizing vertical interconnection, the power loop inductance is effectively reduced without sacrificing the thermal performance. Both simulations and experiments are carried out to validate the design. Q3D simulation results show a power loop inductance of 1.63 nH, verified by the experiment, indicating more than 60% reduction of power loop inductance compared with the baseline module. With 0Ω external gate resistance turn-off at 600V, the voltage overshoot is less than 9% of the bus voltage at a load of 44.6A.
{"title":"Design of a low parasitic inductance SiC power module with double-sided cooling","authors":"Fei Yang, Zhenxian Liang, Zhiqiang Wang, Fred Wang","doi":"10.1109/APEC.2017.7931132","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931132","url":null,"abstract":"In this paper, a low parasitic inductance SiC power module with double-sided cooling is designed and compared with a baseline double-sided cooled module. With the unique 3D layout utilizing vertical interconnection, the power loop inductance is effectively reduced without sacrificing the thermal performance. Both simulations and experiments are carried out to validate the design. Q3D simulation results show a power loop inductance of 1.63 nH, verified by the experiment, indicating more than 60% reduction of power loop inductance compared with the baseline module. With 0Ω external gate resistance turn-off at 600V, the voltage overshoot is less than 9% of the bus voltage at a load of 44.6A.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"490 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129862463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930808
B. Narayanasamy, A. Sathyanarayanan, A. Deshpande, F. Luo
In inverter based motor drives, the fast switching speeds of the power devices result in over-voltage at the motor end. Corresponding to these over-voltages at the motor end, there are over-currents at the inverter end. While the over-voltage increases stress on motor and cable insulation, the load and the cable parasitics increases the switching loss of the power devices. These effects are more pronounced in converters using Wide Bandgap (WBG) devices because of the their faster switching speed. Previous works have only studied either over-voltages or currents in converters with low source impedance. In this paper, the effect of inductive source impedance on the Reflected Wave Phenomenon (RWP) is studied. The impact of different filter topologies (used to mitigate the RWP) on the switching losses of the devices. Also, the effect of the cable parasitic including the ground and shield wires are studied here. Experiments are carried out to identify losses in different filter topologies, RWP, switching losses of devices and dv/dt at the load.
{"title":"Impact of cable and motor loads on wide bandgap device switching and reflected wave phenomenon in motor drives","authors":"B. Narayanasamy, A. Sathyanarayanan, A. Deshpande, F. Luo","doi":"10.1109/APEC.2017.7930808","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930808","url":null,"abstract":"In inverter based motor drives, the fast switching speeds of the power devices result in over-voltage at the motor end. Corresponding to these over-voltages at the motor end, there are over-currents at the inverter end. While the over-voltage increases stress on motor and cable insulation, the load and the cable parasitics increases the switching loss of the power devices. These effects are more pronounced in converters using Wide Bandgap (WBG) devices because of the their faster switching speed. Previous works have only studied either over-voltages or currents in converters with low source impedance. In this paper, the effect of inductive source impedance on the Reflected Wave Phenomenon (RWP) is studied. The impact of different filter topologies (used to mitigate the RWP) on the switching losses of the devices. Also, the effect of the cable parasitic including the ground and shield wires are studied here. Experiments are carried out to identify losses in different filter topologies, RWP, switching losses of devices and dv/dt at the load.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130130952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931159
H. Nene, T. Zaitsu
Isolated Bi-Directional DC-DC converters are commonly used in automotive and data storage applications where energy is transferred between a high-voltage DC bus and a low-voltage DC bus/battery in a bi-directional fashion. A typical implementation includes a phase-shifted full-bridge (PSFB) with synchronous rectification that controls power flow from the high-voltage bus to the low-voltage battery in step-down (buck) mode, and a current-fed push-pull converter that controls the reverse power flow from the low-voltage battery to the high-voltage bus in step-up (boost) mode. The major challenges to implement this PSFB bi-directional operation are; (1) High voltage bridge-FET rectification during reverse power flow (boost mode) in current-fed push-pull converter, (2) Fast seamless transitions between buck and boost modes. This paper presents system performance improvements obtained using 50% duty with phase-shift PWM control scheme to control high voltage bridge-FET rectification in reverse power flow. A new method that provides fast seamless transitions between buck and boost modes of operations is also presented. Experimental results obtained using a wide input range 400V ←→ 12 V, 300W digitally controlled isolated bi-directional DC-DC converter are presented.
{"title":"Bi-directional PSFB DC-DC converter with unique PWM control schemes and seamless mode transitions using enhanced digital control","authors":"H. Nene, T. Zaitsu","doi":"10.1109/APEC.2017.7931159","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931159","url":null,"abstract":"Isolated Bi-Directional DC-DC converters are commonly used in automotive and data storage applications where energy is transferred between a high-voltage DC bus and a low-voltage DC bus/battery in a bi-directional fashion. A typical implementation includes a phase-shifted full-bridge (PSFB) with synchronous rectification that controls power flow from the high-voltage bus to the low-voltage battery in step-down (buck) mode, and a current-fed push-pull converter that controls the reverse power flow from the low-voltage battery to the high-voltage bus in step-up (boost) mode. The major challenges to implement this PSFB bi-directional operation are; (1) High voltage bridge-FET rectification during reverse power flow (boost mode) in current-fed push-pull converter, (2) Fast seamless transitions between buck and boost modes. This paper presents system performance improvements obtained using 50% duty with phase-shift PWM control scheme to control high voltage bridge-FET rectification in reverse power flow. A new method that provides fast seamless transitions between buck and boost modes of operations is also presented. Experimental results obtained using a wide input range 400V ←→ 12 V, 300W digitally controlled isolated bi-directional DC-DC converter are presented.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129227578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930605
Hung-Chi Chen, Che-Yu Lu, Chien-Fu Chen
This paper presents a current sensorless control for dual-boost full-bridge (DBFB) converter with power factor correction (PFC) function. In this topology, the short-through problem can be avoided, and the freewheeling current flows through the independent diode rather than the body diodes of switches. Therefore, the reliability and availability can be improved. The proposed current sensorless control scheme only requires input and output voltages, and that is a simple control strategy without any current sensor. At first, the equivalent single-switch model of the dual-boost full-bridge PFC converter is analyzed and derived. In addition, the experimental control algorithm is implemented by using the DSP TMS320F28335 chip. Finally, some simulation and experimental results are given to validate the performance of the proposed current sensorless control method.
{"title":"Current sensorless control for dual-boost full-bridge PFC converter","authors":"Hung-Chi Chen, Che-Yu Lu, Chien-Fu Chen","doi":"10.1109/APEC.2017.7930605","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930605","url":null,"abstract":"This paper presents a current sensorless control for dual-boost full-bridge (DBFB) converter with power factor correction (PFC) function. In this topology, the short-through problem can be avoided, and the freewheeling current flows through the independent diode rather than the body diodes of switches. Therefore, the reliability and availability can be improved. The proposed current sensorless control scheme only requires input and output voltages, and that is a simple control strategy without any current sensor. At first, the equivalent single-switch model of the dual-boost full-bridge PFC converter is analyzed and derived. In addition, the experimental control algorithm is implemented by using the DSP TMS320F28335 chip. Finally, some simulation and experimental results are given to validate the performance of the proposed current sensorless control method.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130044942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7931126
W. Shi, Xiang Wang, Yu Zhou, Haoze Luo, Wuhua Li, Xiangning He, Jun Ma, Guodong Chen, Ye Tian, Enxing Yang
The extraction of junction temperature Tj plays a critical role in the IGBT module reliability. In recent years, the extraction of Tj via parasitic parameters has drawn much attention for its ability to be integrated in the driver circuit. However, the aging of modules can affect the parasitic parameters, leading to the inaccuracy of Tj extraction when fatigue and aging occurs. Firstly, this paper analyzes the inner structure and equivalent circuit of IGBT modules in detail and proves the parasitic parameters of collector far less susceptible from aging than parameters of gate and emitter. Secondly, an enhanced Tj extraction method via the parasitic parameters between the power collector and auxiliary collector is presented. Besides, Due to the decoupling of this method from the driver current, the load current can be acquired accurately with an integrator, which exempts the extraction from the need of a current sensor. Finally, a series of verification tests are handled to verify the validation and accuracy of the method.
{"title":"A current sensorless IGBT junction temperature extraction method via parasitic parameters between power collector and auxiliary collector","authors":"W. Shi, Xiang Wang, Yu Zhou, Haoze Luo, Wuhua Li, Xiangning He, Jun Ma, Guodong Chen, Ye Tian, Enxing Yang","doi":"10.1109/APEC.2017.7931126","DOIUrl":"https://doi.org/10.1109/APEC.2017.7931126","url":null,"abstract":"The extraction of junction temperature Tj plays a critical role in the IGBT module reliability. In recent years, the extraction of Tj via parasitic parameters has drawn much attention for its ability to be integrated in the driver circuit. However, the aging of modules can affect the parasitic parameters, leading to the inaccuracy of Tj extraction when fatigue and aging occurs. Firstly, this paper analyzes the inner structure and equivalent circuit of IGBT modules in detail and proves the parasitic parameters of collector far less susceptible from aging than parameters of gate and emitter. Secondly, an enhanced Tj extraction method via the parasitic parameters between the power collector and auxiliary collector is presented. Besides, Due to the decoupling of this method from the driver current, the load current can be acquired accurately with an integrator, which exempts the extraction from the need of a current sensor. Finally, a series of verification tests are handled to verify the validation and accuracy of the method.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128459665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930772
Ashraf Ali Khan, Honnyong Cha, F. Akbar, Kim Kisu, J. Lai
Inverter is a definitive solution toward ac voltage regulation in a system having input dc voltage variation. This paper proposes, a novel single-stage single-phase buck-boost inverter called dual buck-boost inverter. It has the buck-boost function and requires only four active switches. It has no shoot-through worries and has improved reliability. In the proposed inverter, the body diodes of switches are disabled to conduct. Therefore, power MOSFETs can be used without worries of reverse recovery of body diodes. In this paper, a new PWM scheme is also proposed for the proposed inverter in which only one switch is switching at high frequency. As a result, the power loss can be reduced significantly and higher power transfer efficiency can be realized. Experimental results are provided to validate the capability of the proposed dual buck-boost inverter to regulate the output ac voltage for wide variation of input dc voltage.
{"title":"Dual buck-boost inverter","authors":"Ashraf Ali Khan, Honnyong Cha, F. Akbar, Kim Kisu, J. Lai","doi":"10.1109/APEC.2017.7930772","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930772","url":null,"abstract":"Inverter is a definitive solution toward ac voltage regulation in a system having input dc voltage variation. This paper proposes, a novel single-stage single-phase buck-boost inverter called dual buck-boost inverter. It has the buck-boost function and requires only four active switches. It has no shoot-through worries and has improved reliability. In the proposed inverter, the body diodes of switches are disabled to conduct. Therefore, power MOSFETs can be used without worries of reverse recovery of body diodes. In this paper, a new PWM scheme is also proposed for the proposed inverter in which only one switch is switching at high frequency. As a result, the power loss can be reduced significantly and higher power transfer efficiency can be realized. Experimental results are provided to validate the capability of the proposed dual buck-boost inverter to regulate the output ac voltage for wide variation of input dc voltage.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116404602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-26DOI: 10.1109/APEC.2017.7930613
Lan Dongdong, P. Das
The current source rectifier is a buck type rectifier, and it has advantages such as output voltage variation in wide range, high power density, unity power factor and suitable for variable frequency applications. However, most of them operate in continuous conduction mode where the output current is assumed to be a DC value. When the output inductor is small and/or the converter is operating in light load, the dc link current will become discontinuous, and input current will be distorted. In this paper, a three-phase isolated matrix current source rectifier (CSR) is designed to work in discontinuous conduction mode (DCM), where high frequency transformer is used to provide galvanic isolation. A novel symmetric space vector modulation (SVM) scheme is proposed to conduct bidirectional current. Two loop control based on feedback linearization in dq frame is applied to control input power factor and output voltage. Power factor correction (PFC) and low total harmonic distortion (THD) is verified by simulation. It has advantage in high power density and step down voltage application.
{"title":"Isolated matrix current source rectifier in discontinuous conduction mode","authors":"Lan Dongdong, P. Das","doi":"10.1109/APEC.2017.7930613","DOIUrl":"https://doi.org/10.1109/APEC.2017.7930613","url":null,"abstract":"The current source rectifier is a buck type rectifier, and it has advantages such as output voltage variation in wide range, high power density, unity power factor and suitable for variable frequency applications. However, most of them operate in continuous conduction mode where the output current is assumed to be a DC value. When the output inductor is small and/or the converter is operating in light load, the dc link current will become discontinuous, and input current will be distorted. In this paper, a three-phase isolated matrix current source rectifier (CSR) is designed to work in discontinuous conduction mode (DCM), where high frequency transformer is used to provide galvanic isolation. A novel symmetric space vector modulation (SVM) scheme is proposed to conduct bidirectional current. Two loop control based on feedback linearization in dq frame is applied to control input power factor and output voltage. Power factor correction (PFC) and low total harmonic distortion (THD) is verified by simulation. It has advantage in high power density and step down voltage application.","PeriodicalId":201289,"journal":{"name":"2017 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125608786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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