Novel electronic properties of superlattices, double barrier diodes and other semiconductor microstructures have generated considerable current interest from fundamental as well as device points of views. One of the driving forces behind this interest is the possibility of novel high speed devices; e.g. Sollner et al [1] have shown very high frequency response for double barrier diodes. There are also a number of very interesting fundamental issues as proposed in the original work of Esaki and Tsu [2]. Some of this work has been recently reviewed by Esaki [3] and Capasso et al [4].
{"title":"Ultrafast Optical Studies of Tunneling and Perpendicular Transport in Semiconductor Microstructures","authors":"J. Shah","doi":"10.1364/qwoe.1989.wc1","DOIUrl":"https://doi.org/10.1364/qwoe.1989.wc1","url":null,"abstract":"Novel electronic properties of superlattices, double barrier diodes and other semiconductor microstructures have generated considerable current interest from fundamental as well as device points of views. One of the driving forces behind this interest is the possibility of novel high speed devices; e.g. Sollner et al [1] have shown very high frequency response for double barrier diodes. There are also a number of very interesting fundamental issues as proposed in the original work of Esaki and Tsu [2]. Some of this work has been recently reviewed by Esaki [3] and Capasso et al [4].","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116027951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Some photonic circuits require optical pulse generators to provide clock pulses for optical logic elements. For example, a recently reported all-optical regenerator [1] used an injection-locked self-electro-optic-effect-device (SEED) oscillator [2] to recover optical clock pulses. The SEED oscillator is a simple optical circuit, consisting of only a quantum-well SEED electrically biased through a resonant LC circuit. By illuminating the SEED with cw light, it can exhibit negative conductance, causing the electrical circuit to oscillate. The voltage oscillations modulate the SEED’S-optical absorption so that light is transmitted through the SEED as a train of pulses.
{"title":"Quantum-Well SEED Optical Pulse Generator","authors":"C. R. Giles, T. Wood, Tingye Li, C. Burrus","doi":"10.1364/qwoe.1989.tub5","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tub5","url":null,"abstract":"Some photonic circuits require optical pulse generators to provide clock pulses for optical logic elements. For example, a recently reported all-optical regenerator [1] used an injection-locked self-electro-optic-effect-device (SEED) oscillator [2] to recover optical clock pulses. The SEED oscillator is a simple optical circuit, consisting of only a quantum-well SEED electrically biased through a resonant LC circuit. By illuminating the SEED with cw light, it can exhibit negative conductance, causing the electrical circuit to oscillate. The voltage oscillations modulate the SEED’S-optical absorption so that light is transmitted through the SEED as a train of pulses.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130621076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Q. Fu, D. Lee, M. Fritze, A. Nurmikko, R. Gunshor, L. Kolodziejski
It is now well established that Te is a strong isoelectronic center for excitons in II-VI compound semiconductors such as ZnSe [1],[2], and ZnS [3], Deeply bound states (>100 meV) exist due to the attractive short range potential by Te for holes. Furthermore, it has been argued [2] that the process involves strong local lattice relaxation in a dynamical sense, i.e. that photoexcited holes are subject to self-trapping while the electron component of the exciton simply Coulomb orbits the ’Frenkel-like’ hole [4]. The use of such isoelectronic centers may be especially useful in developing light emitters in the blue-green region of the spectrum. Fundamentally, introducing the centers by ’delta-doping’ can provide an unusual opportunity to study 2-dimensional energy transport of carriers under conditions of strong localization and coupling to the lattice; i.e. a lower dimensional ’polaron’ problem. We have performed optical experiments, including direct imaging of trapped exciton population gratings, to obtain first results in ZnSe-based superlattices and quantum wells where incorporation of one or two monolayers of ZnTe by atomic layer epitaxy provides a planar distribution of Te isoelectronic centers.
{"title":"Energy Transport of Strongly Localized Excitons in 2D Limit: Monolayers of Te Isoelectronic Traps in ZnSe","authors":"Q. Fu, D. Lee, M. Fritze, A. Nurmikko, R. Gunshor, L. Kolodziejski","doi":"10.1364/qwoe.1989.wa4","DOIUrl":"https://doi.org/10.1364/qwoe.1989.wa4","url":null,"abstract":"It is now well established that Te is a strong isoelectronic center for excitons in II-VI compound semiconductors such as ZnSe [1],[2], and ZnS [3], Deeply bound states (>100 meV) exist due to the attractive short range potential by Te for holes. Furthermore, it has been argued [2] that the process involves strong local lattice relaxation in a dynamical sense, i.e. that photoexcited holes are subject to self-trapping while the electron component of the exciton simply Coulomb orbits the ’Frenkel-like’ hole [4]. The use of such isoelectronic centers may be especially useful in developing light emitters in the blue-green region of the spectrum. Fundamentally, introducing the centers by ’delta-doping’ can provide an unusual opportunity to study 2-dimensional energy transport of carriers under conditions of strong localization and coupling to the lattice; i.e. a lower dimensional ’polaron’ problem. We have performed optical experiments, including direct imaging of trapped exciton population gratings, to obtain first results in ZnSe-based superlattices and quantum wells where incorporation of one or two monolayers of ZnTe by atomic layer epitaxy provides a planar distribution of Te isoelectronic centers.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126441637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Reihlen, A. Persson, T. Wang, K. Fry, G. B. Stringfellow
Photoluminescence excitation spectroscopy (PLE) has been widely applied to reveal information about the subband structure of quantum wells (QWs). PLE essentially probes the intersubband absorption in the well, which cannot be probed in transmission because of the low absorbances of single QWs. PLE is a standard characterization technique for AIGaAs/GaAs QWs due to the availability of tunable dye lasers as excitation sources in the AIGaAs/GaAs spectral regime (e.g. ref.[1]). There have been very few PLE studies on GaInAs/InP QWs because in this spectral regime there are no laser dyes commercially available. Kodama et al. [2] and Sauer et al. [3] have studied GaInAs/InP multiple QWs and observed transitions from the first three heavy and the first two light hole subbands to the respective electron subbands. Skolnick et al.[4,5], Sauer et al.[6,7], Razeghi et al. [8,9], and Temkin et al.[10] have studied GaInAs/InP single QWs, and observed transitions from the first five heavy and the first three light hole subbands to the respective electron subbands. Skolnick et al. [5] have tentatively assigned a feature in their spectra to absorption involving the first heavy hole subband and the InP (barrier) conduction band. In this study PLE spectra from extremely thin Gag0 47ln0 53AS /InP single QWs are investigated. The PL spectra from these samples exhibit narrow, intense multiplets, which have been attributed to recombination in regions of the wells, differing in width by single monolayers [11].
{"title":"Photoluminscence and Photoluminescence Excitation Spectroscopy Study of Thin GaInAs/InP Quantum Wells","authors":"E. Reihlen, A. Persson, T. Wang, K. Fry, G. B. Stringfellow","doi":"10.1364/qwoe.1989.tue4","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tue4","url":null,"abstract":"Photoluminescence excitation spectroscopy (PLE) has been widely applied to reveal information about the subband structure of quantum wells (QWs). PLE essentially probes the intersubband absorption in the well, which cannot be probed in transmission because of the low absorbances of single QWs. PLE is a standard characterization technique for AIGaAs/GaAs QWs due to the availability of tunable dye lasers as excitation sources in the AIGaAs/GaAs spectral regime (e.g. ref.[1]). There have been very few PLE studies on GaInAs/InP QWs because in this spectral regime there are no laser dyes commercially available. Kodama et al. [2] and Sauer et al. [3] have studied GaInAs/InP multiple QWs and observed transitions from the first three heavy and the first two light hole subbands to the respective electron subbands. Skolnick et al.[4,5], Sauer et al.[6,7], Razeghi et al. [8,9], and Temkin et al.[10] have studied GaInAs/InP single QWs, and observed transitions from the first five heavy and the first three light hole subbands to the respective electron subbands. Skolnick et al. [5] have tentatively assigned a feature in their spectra to absorption involving the first heavy hole subband and the InP (barrier) conduction band. In this study PLE spectra from extremely thin Gag0 47ln0 53AS /InP single QWs are investigated. The PL spectra from these samples exhibit narrow, intense multiplets, which have been attributed to recombination in regions of the wells, differing in width by single monolayers [11].","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133690960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Ghiti, W. Batty, E. O’Reilly, K. Heasman, A. Adams
We have shown previously the benefits of strained layer structures for low threshold current, high quantum efficiency, long wavelength lasers with high To [1]. In this paper we briefly review the benefits and consider the influence of strain on the relaxation oscillation frequency fr and the linewidth enhancement factor α. We find the relaxation oscillation frequency is enhanced in a strained layer laser, while α is reduced by comparison with a lattice-matched quantum well laser.
{"title":"Dynamics and Linewidth Enhancement Factor in Long Wavelength Strained Layer Lasers","authors":"A. Ghiti, W. Batty, E. O’Reilly, K. Heasman, A. Adams","doi":"10.1364/qwoe.1989.tue10","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tue10","url":null,"abstract":"We have shown previously the benefits of strained layer structures for low threshold current, high quantum efficiency, long wavelength lasers with high To [1]. In this paper we briefly review the benefits and consider the influence of strain on the relaxation oscillation frequency fr and the linewidth enhancement factor α. We find the relaxation oscillation frequency is enhanced in a strained layer laser, while α is reduced by comparison with a lattice-matched quantum well laser.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132807611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Calculations of the exciton binding energy in quantum well systems carried out in the single sub-band limit where only the lowest electron and hole states contribute to the exciton have been widely reported.(1,2) This limit is valid when the confined electron and hole energy levels in the well are widely separated in energy compared to the exciton binding energy. At the other extreme would be the case of a superlattice in which the electron and hole subband bandwidths are much larger than the exciton binding energy and the exciton would be made from a linear combination of a number of subband states.(3) In this paper we wish to treat an intermediate case, namely a double quantum well system consisting of two identical wells of width Lw separated by a barrier of width Lb. When Lb is large the two lowest lying states ( i.e. the first symmetric and anti-symmetric electron and hole states ) arc almost degenerate. This near-degeneracy is progressively lifted as the barrier thickness, decreases. This means that for thick barriers in order to correctly calculate the exciton binding energy one must account for the mixing caused by the Coulomb potential between the two pairs of states.
{"title":"Excitons in Double Quantum Wells-beyond the single-subband limit","authors":"I. Galbraith, G. Duggan","doi":"10.1364/qwoe.1989.tue2","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tue2","url":null,"abstract":"Calculations of the exciton binding energy in quantum well systems carried out in the single sub-band limit where only the lowest electron and hole states contribute to the exciton have been widely reported.(1,2) This limit is valid when the confined electron and hole energy levels in the well are widely separated in energy compared to the exciton binding energy. At the other extreme would be the case of a superlattice in which the electron and hole subband bandwidths are much larger than the exciton binding energy and the exciton would be made from a linear combination of a number of subband states.(3) In this paper we wish to treat an intermediate case, namely a double quantum well system consisting of two identical wells of width Lw separated by a barrier of width Lb. When Lb is large the two lowest lying states ( i.e. the first symmetric and anti-symmetric electron and hole states ) arc almost degenerate. This near-degeneracy is progressively lifted as the barrier thickness, decreases. This means that for thick barriers in order to correctly calculate the exciton binding energy one must account for the mixing caused by the Coulomb potential between the two pairs of states.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126356014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The dependence of electroabsorption in GaAs/AlxGa1-xAs multiple quantum well (MQW) structures on well width (Lz) is of considerable importance in optimizing optical modulation devices.1,2 However, a complete characterization including the narrow well width limit has still been lacking. Previously, we have reported that for GaAs/Al0.32Ga0.68As MQWs with 100 Å barriers the maximum obtainable change in the absorption coefficient (Δαmax) increases monotonically with decreasing Lz (from 260 to 50 Å) at the cost of an increasing applied electric field (εmax).2 It was predicted that a peak value would be reached near Lz = 25 Å, being limited at lower Lz by either dielectric breakdown or reduced carrier confinement in the well. In order to determine the complete well width dependence of band edge electroabsorption in GaAs/AlxGa1-xAs MQW structures, our experiments were extended to cover the range from 47 to 17 Å. We demonstrate that this range does indeed contain an optimum value of Lz that provides a peak value in Δαmax. But contrary to our prediction, we shall show that enhanced broadening of the heavy hole excitonic resonance, resulting from phonon scattering at small Lz, is responsible for this result.
{"title":"Optimum Electroabsorption in Quantum Wells as a Compromise between Exciton Confinement and Linewidth Broadening","authors":"K. W. Jelley, R. Engelmann, K. Alavi, H. Lee","doi":"10.1364/qwoe.1989.pd2","DOIUrl":"https://doi.org/10.1364/qwoe.1989.pd2","url":null,"abstract":"The dependence of electroabsorption in GaAs/AlxGa1-xAs multiple quantum well (MQW) structures on well width (Lz) is of considerable importance in optimizing optical modulation devices.1,2 However, a complete characterization including the narrow well width limit has still been lacking. Previously, we have reported that for GaAs/Al0.32Ga0.68As MQWs with 100 Å barriers the maximum obtainable change in the absorption coefficient (Δαmax) increases monotonically with decreasing Lz (from 260 to 50 Å) at the cost of an increasing applied electric field (εmax).2 It was predicted that a peak value would be reached near Lz = 25 Å, being limited at lower Lz by either dielectric breakdown or reduced carrier confinement in the well. In order to determine the complete well width dependence of band edge electroabsorption in GaAs/AlxGa1-xAs MQW structures, our experiments were extended to cover the range from 47 to 17 Å. We demonstrate that this range does indeed contain an optimum value of Lz that provides a peak value in Δαmax. But contrary to our prediction, we shall show that enhanced broadening of the heavy hole excitonic resonance, resulting from phonon scattering at small Lz, is responsible for this result.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116601851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have recently developed a technique for optimizing the design of GaAs/(GaAl)As MQW electroabsorption modulators and investigating their potential performance [1]. In this paper, we develop the same technique for the (GaIn)As/InP system whose operating wavelength of around 1600nm is close to that of the low loss window of optical fibres.
{"title":"Limits to Normal Incidence Electroabsorption Modulation in GaInAs/InP Multiple Quantum Well Diodes","authors":"P. J. Stevens, G. Parry","doi":"10.1364/qwoe.1989.tue12","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tue12","url":null,"abstract":"We have recently developed a technique for optimizing the design of GaAs/(GaAl)As MQW electroabsorption modulators and investigating their potential performance [1]. In this paper, we develop the same technique for the (GaIn)As/InP system whose operating wavelength of around 1600nm is close to that of the low loss window of optical fibres.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"310 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115427342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Steel, P. Bhattacharya, J. Remillard, Hailin Wang, M. D. Webb, J. Pamulapati, J. Oh
The linear and nonlinear optical properties near the fundamental band edge of GaAs quantum well structures are important for applications of these materials to devices as well as providing new insight into the effects of quantum confinement. Excitons dominate the optical spectrum in this region, however, the coupling of excitons to the applied radiation field is modified by dynamical interactions due to the coupling of the exciton to the surrounding crystal lattice and the vacuum radiation field. At room temperature, the exciton is quickly ionized by phonons resulting in an electron-hole plasma which modifies the optical properties due to the effects of bandfilling and exchange that lead to strong optical nonlinearities.1 At low temperature, the exciton is more stable and other effects such as spontaneous emission, tunneling, diffusion, and scattering from phonons and defects modify the optical properties. These processes can result in decay of the excitation as well as decay of the coherence or induced polarization between the initial and the excited state. In this paper, we describe the use of high resolution nonlinear laser spectroscopy based on four-wave mixing (FWM) to obtain lineshapes associated with the nonlinear susceptibility. The measurements provide new understanding of the physical processes associated with the relaxation of the exciton and the dynamics of the optical response. At low temperatures, FWM can often eliminate inhomogeneous broadening leading to a direct measurement of the exciton homogeneous lineshape.
{"title":"High Resolution Nonlinear Laser Spectroscopy of Excitation and Relaxation Near the Band Edge in GaAs Quantum Well Structures","authors":"D. Steel, P. Bhattacharya, J. Remillard, Hailin Wang, M. D. Webb, J. Pamulapati, J. Oh","doi":"10.1364/qwoe.1989.md1","DOIUrl":"https://doi.org/10.1364/qwoe.1989.md1","url":null,"abstract":"The linear and nonlinear optical properties near the fundamental band edge of GaAs quantum well structures are important for applications of these materials to devices as well as providing new insight into the effects of quantum confinement. Excitons dominate the optical spectrum in this region, however, the coupling of excitons to the applied radiation field is modified by dynamical interactions due to the coupling of the exciton to the surrounding crystal lattice and the vacuum radiation field. At room temperature, the exciton is quickly ionized by phonons resulting in an electron-hole plasma which modifies the optical properties due to the effects of bandfilling and exchange that lead to strong optical nonlinearities.1 At low temperature, the exciton is more stable and other effects such as spontaneous emission, tunneling, diffusion, and scattering from phonons and defects modify the optical properties. These processes can result in decay of the excitation as well as decay of the coherence or induced polarization between the initial and the excited state. In this paper, we describe the use of high resolution nonlinear laser spectroscopy based on four-wave mixing (FWM) to obtain lineshapes associated with the nonlinear susceptibility. The measurements provide new understanding of the physical processes associated with the relaxation of the exciton and the dynamics of the optical response. At low temperatures, FWM can often eliminate inhomogeneous broadening leading to a direct measurement of the exciton homogeneous lineshape.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127132134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Olbright, A. Owyoung, H. Hjalmarson, T. Brennan
Recently, "Type-II" semiconductor superlattices characterized by a "staggered" alignment of the valence and conduction bands have attracted much interest.1-5 Considerable effort has been directed toward understanding the optical properties of these structures. We focus our attention on a subclass of GaAs/AlAs superlattices in which quantum size effects produce the staggered Type-II band structure as illustrated in Figure 1. Although the linear optical spectroscopy of these structures is fairly well understood, to date there is a paucity of research on their nonlinear optical properties and inter-subband and inter-layer relaxation dynamics.
{"title":"Carrier-Density- and Excitation-Energy-Dependent Γ-X Photoluminescence of Type-II GaAs/AlAs Superlattices","authors":"G. Olbright, A. Owyoung, H. Hjalmarson, T. Brennan","doi":"10.1364/qwoe.1989.tud3","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tud3","url":null,"abstract":"Recently, \"Type-II\" semiconductor superlattices characterized by a \"staggered\" alignment of the valence and conduction bands have attracted much interest.1-5 Considerable effort has been directed toward understanding the optical properties of these structures. We focus our attention on a subclass of GaAs/AlAs superlattices in which quantum size effects produce the staggered Type-II band structure as illustrated in Figure 1. Although the linear optical spectroscopy of these structures is fairly well understood, to date there is a paucity of research on their nonlinear optical properties and inter-subband and inter-layer relaxation dynamics.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127686785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：