D. Guy, D. D. Besgrove, L. Taylor, N. Apsley, S. J. Bass
InGaAs-InP multiple quantum well (MQW) structures are of particular interest for electro-absorption modulator applications because they offer the prospect of small, fast, monolithic spatial light modulator arrays compatible with the low loss optical fibre waveband at wavelength ~1.55μm. However, the QW absorption coefficients found in the InGaAs-InP system1 are significantly lower than those in the more widely studied GaAs-AlGaAs system2. This limits the changes in absorption coefficient provided by the quantum-confined Stark effect (QCSE) in InGaAs-InP, and hence the modulation attainable in single-pass structures3,4. A careful study of the QCSE in InGaAs—InP is therefore necessary to ensure that the full potential of this technologically important system is realised.
{"title":"InGaAs-InP MQW Electro-Absorption Modulators","authors":"D. Guy, D. D. Besgrove, L. Taylor, N. Apsley, S. J. Bass","doi":"10.1364/qwoe.1989.tue13","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tue13","url":null,"abstract":"InGaAs-InP multiple quantum well (MQW) structures are of particular interest for electro-absorption modulator applications because they offer the prospect of small, fast, monolithic spatial light modulator arrays compatible with the low loss optical fibre waveband at wavelength ~1.55μm. However, the QW absorption coefficients found in the InGaAs-InP system1 are significantly lower than those in the more widely studied GaAs-AlGaAs system2. This limits the changes in absorption coefficient provided by the quantum-confined Stark effect (QCSE) in InGaAs-InP, and hence the modulation attainable in single-pass structures3,4. A careful study of the QCSE in InGaAs—InP is therefore necessary to ensure that the full potential of this technologically important system is realised.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"55 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122843255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The work by Esaki and Tsu on tunneling in superlattices1 has generated a considerable interest for the potential application of tunneling to real devices. The rapid progress of epitaxial growth techniques has led to the creation of novel semiconductor structures which exhibit quantum-size effects and tunneling such as the double-barrier resonnant tunneling structures or the superlattice p-i-n diodes2. Transport studies in these structures demonstrated Bloch transport through the superlattice minibands3, negative differential resistance in double barrier diodes4, field induced localization5. More recently, optical measurements have been performed in double barrier structures in order to gain some insight on space-charge buildup6 and escape rates7.
{"title":"Electron Tunneling Times in Coupled Quantum Wells","authors":"D. Oberli, J. Shah, T. Damen, C. Tu, D. A. Miller","doi":"10.1364/qwoe.1989.wd3","DOIUrl":"https://doi.org/10.1364/qwoe.1989.wd3","url":null,"abstract":"The work by Esaki and Tsu on tunneling in superlattices1 has generated a considerable interest for the potential application of tunneling to real devices. The rapid progress of epitaxial growth techniques has led to the creation of novel semiconductor structures which exhibit quantum-size effects and tunneling such as the double-barrier resonnant tunneling structures or the superlattice p-i-n diodes2. Transport studies in these structures demonstrated Bloch transport through the superlattice minibands3, negative differential resistance in double barrier diodes4, field induced localization5. More recently, optical measurements have been performed in double barrier structures in order to gain some insight on space-charge buildup6 and escape rates7.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115623941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The superior performance of light modulators based on the quantum confined Stark effect has been accepted for some time. Many experimental and theoretical data were obtained for GaAs-AlGaAs QW and SL. In the 1.55μm optical window, which is of particular interest for optical communication purposes, InGaAs and InGaAsP QW give better performances. For the ternary material refractive index data were published1 and the use of InGaAs and InGaAsP QW's in waveguide modulators2 and DBR lasers3 was demonstrated. Recently the advantage of using quaternary quantum wells for electrooptic phase modulation at 1.55μm was stressed4. The main point of interest is the additional degree of freedom, namely the InGaAsP composition. The problem of finding the optimal composition together with the best possible QW size for maximal phase modulation, within certain restrictions for the applied field, is treated on a theoretical basis in this paper. The modeling of the electric field dependent absorption in QW’s has already obtained a lot of attention5. Refractive index changes under applied field are much more difficult to model accurately due to the long energy range of the changes induced by the field. Recently Yamamoto et al.6 presented some theoretical results in a 30nm InGaAsP QW. They neglect exciton effects and only consider contributions of heavy holes. Both approximations work quite well in the large well limit, but are less accurate for smaller QW's.
{"title":"Theoretical optimisation of Electrooptical Phase Modulation in InGaAsP Quantumwells.","authors":"D. Botteldooren, R. Baets","doi":"10.1364/qwoe.1989.pd5","DOIUrl":"https://doi.org/10.1364/qwoe.1989.pd5","url":null,"abstract":"The superior performance of light modulators based on the quantum confined Stark effect has been accepted for some time. Many experimental and theoretical data were obtained for GaAs-AlGaAs QW and SL. In the 1.55μm optical window, which is of particular interest for optical communication purposes, InGaAs and InGaAsP QW give better performances. For the ternary material refractive index data were published1 and the use of InGaAs and InGaAsP QW's in waveguide modulators2 and DBR lasers3 was demonstrated. Recently the advantage of using quaternary quantum wells for electrooptic phase modulation at 1.55μm was stressed4. The main point of interest is the additional degree of freedom, namely the InGaAsP composition. The problem of finding the optimal composition together with the best possible QW size for maximal phase modulation, within certain restrictions for the applied field, is treated on a theoretical basis in this paper. The modeling of the electric field dependent absorption in QW’s has already obtained a lot of attention5. Refractive index changes under applied field are much more difficult to model accurately due to the long energy range of the changes induced by the field. Recently Yamamoto et al.6 presented some theoretical results in a 30nm InGaAsP QW. They neglect exciton effects and only consider contributions of heavy holes. Both approximations work quite well in the large well limit, but are less accurate for smaller QW's.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129347216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Kan, M. Yamanishi, K. Mukaiyama, M. Okuda, T. Ohnishi, K. Obata, M. Kawamoto, I. Suemune
Recently, field-induced modulations of optical properties of quantum well (QW) structures are of great interest because of their high speed switching capability. We have proposed a light emitting device1) which makes use of the field effect, instead of the change in carrier density, to result in a fast emission switching free from life time limitation. One of the key points to realize the proposed device was how to design a possible device structure which has the functions of carrier injection and of field control. In this paper, we report the dynamic switching characteristics of the practical field-effect light emitter2), demonstrating a life time free switching.
{"title":"Dynamic Switching Characteristics of Light Emission in Quantum Confined Field-Effect Light Emitters","authors":"Y. Kan, M. Yamanishi, K. Mukaiyama, M. Okuda, T. Ohnishi, K. Obata, M. Kawamoto, I. Suemune","doi":"10.1364/qwoe.1989.mc6","DOIUrl":"https://doi.org/10.1364/qwoe.1989.mc6","url":null,"abstract":"Recently, field-induced modulations of optical properties of quantum well (QW) structures are of great interest because of their high speed switching capability. We have proposed a light emitting device1) which makes use of the field effect, instead of the change in carrier density, to result in a fast emission switching free from life time limitation. One of the key points to realize the proposed device was how to design a possible device structure which has the functions of carrier injection and of field control. In this paper, we report the dynamic switching characteristics of the practical field-effect light emitter2), demonstrating a life time free switching.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115884481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Vodjdani, E. Costard, F. Chevoir, D. Thomas, P. Bois, S. Delaitre
Tunneling is one of the basic quantum mechanical phenomena which plays a key role in many ultra thin semiconductor devices. Besides their potential for applications, double barrier heterostructures are also interesting for the understanding of tunneling-based transport processes (1) and their dynamics. Time-resolved photoluminescence (PL) has been used to determine the tunneling escape rate of electrons from a single quantum well through a thin barrier into a continuum (2) and to determine the electric field dependance of this tunneling rate (3).The charge accumulation in the quantum well can be estimated using magnetotunneling (4) or as recently demonstrated steady-state photoluminescence (5).
{"title":"Optical Evidence of Charge Accumulation in Double Barrier Diodes","authors":"N. Vodjdani, E. Costard, F. Chevoir, D. Thomas, P. Bois, S. Delaitre","doi":"10.1364/qwoe.1989.wc3","DOIUrl":"https://doi.org/10.1364/qwoe.1989.wc3","url":null,"abstract":"Tunneling is one of the basic quantum mechanical phenomena which plays a key role in many ultra thin semiconductor devices. Besides their potential for applications, double barrier heterostructures are also interesting for the understanding of tunneling-based transport processes (1) and their dynamics. Time-resolved photoluminescence (PL) has been used to determine the tunneling escape rate of electrons from a single quantum well through a thin barrier into a continuum (2) and to determine the electric field dependance of this tunneling rate (3).The charge accumulation in the quantum well can be estimated using magnetotunneling (4) or as recently demonstrated steady-state photoluminescence (5).","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114812207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Optical modulators fabricated from GaAs/AIGaAs multiple quantum well (MQW) structures have been operated in transmission,1 reflection,2 waveguide,3 and Fabry-Perot resonator4 modes with maximum contrast ratios ranging from 5 to 10. Small arrays of these devices have also been reported,5 but with lower contrasts and relatively little data on uniformity. Large arrays with high contrast and uniformity are required in optical computing and signal processing applications. In this work we report the fabrication of 16 x 16 arrays of transmission and reflection modulators with a maximum contrast ratio of 26. This is believed to be the largest room temperature contrast ever achieved in a MQW device. We have also made measurements of the uniformity of 1x16 columns of modulators from these arrays and have demonstrated that device-to-device variations in the transmission arrays are approximately 1% of the average transmission.
{"title":"1×16 Arrays of GaAs/AlGaAs Multiple Quantum Well Optical Modulators with 26:1 Contrast","authors":"R. Bailey, R. Sahai, C. Lastufka","doi":"10.1364/qwoe.1989.pd1","DOIUrl":"https://doi.org/10.1364/qwoe.1989.pd1","url":null,"abstract":"Optical modulators fabricated from GaAs/AIGaAs multiple quantum well (MQW) structures have been operated in transmission,1 reflection,2 waveguide,3 and Fabry-Perot resonator4 modes with maximum contrast ratios ranging from 5 to 10. Small arrays of these devices have also been reported,5 but with lower contrasts and relatively little data on uniformity. Large arrays with high contrast and uniformity are required in optical computing and signal processing applications. In this work we report the fabrication of 16 x 16 arrays of transmission and reflection modulators with a maximum contrast ratio of 26. This is believed to be the largest room temperature contrast ever achieved in a MQW device. We have also made measurements of the uniformity of 1x16 columns of modulators from these arrays and have demonstrated that device-to-device variations in the transmission arrays are approximately 1% of the average transmission.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130869395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Semiconductor superlattices and quantum wells (QWs) are very important as new man-made materials for novel electronic and photonic devices. These modulated semiconductor structures have been extensively investigated for the past decade; however, they have been prepared almost exclusively on (100)–oriented substrates. The recent progress in molecular beam epitaxy (MBE) has made it possible to grow "device-quality" AlGaAs layers on (111)- and (110)–oriented GaAs substrates.1-3 As a result of comparing several properties of QWs grown on both (111)- and (100)-oriented substrates, we have discovered that a variety of quantum size effects (QSEs) depend upon the quantization direction, that is, the growth axis. In this paper, the experimentally confirmed orientation-dependent QSEs are overviewed, and application to the QW laser is presented.
{"title":"Physics and Applications of Enhanced Quantum Size Effects in (111)-Oriented Quantum Wells","authors":"T. Suyama, T. Hayakawa, T. Hijikata","doi":"10.1364/qwoe.1989.tuc4","DOIUrl":"https://doi.org/10.1364/qwoe.1989.tuc4","url":null,"abstract":"Semiconductor superlattices and quantum wells (QWs) are very important as new man-made materials for novel electronic and photonic devices. These modulated semiconductor structures have been extensively investigated for the past decade; however, they have been prepared almost exclusively on (100)–oriented substrates. The recent progress in molecular beam epitaxy (MBE) has made it possible to grow \"device-quality\" AlGaAs layers on (111)- and (110)–oriented GaAs substrates.1-3 As a result of comparing several properties of QWs grown on both (111)- and (100)-oriented substrates, we have discovered that a variety of quantum size effects (QSEs) depend upon the quantization direction, that is, the growth axis. In this paper, the experimentally confirmed orientation-dependent QSEs are overviewed, and application to the QW laser is presented.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126455457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The nonlinear optical properties and the ultrafast dynamics of excitons in semiconductors are a major field of present semiconductor research. This interest is explained by the potential applications of excitonic nonlinearities as ultrafast optical switching devices in future optical communication systems. In a recent theoretical paper Hanamura /1/ discussed the advantages of excitons in a quantum well (QW) as a nonliner optical medium combining large 3rd order nonlinear susceptibility χ(3) with a fast response. The strong enhancement of is χ(3) explained as a consequence of both the macroscopic transition dipole moment of the exciton in a QW and the rapid radiative decay of the confined excitons. Hanamura calculated that an exciton in a QW should decay superradiantly through its macroscopic dipole transition moment within a few picoseconds. This superradiant decay requires, however, a coherent polarization of the material and will be strongly reduced if the spatial and temporal coherence of the excited excitons is destroyed by interaction of the excitons with their environment. Such a tight connection between the radiative lifetime τ r and the dephasing T2 has been recently predicted by Feldmann et al. /2/.
{"title":"Enhancement of the Radiative Lifetime of 2D Excitons in a GaAs Quantum Well by Dephasing Collisions","authors":"J. Kuhl, A. Honold, L. Schultheis, C. Tu","doi":"10.1364/qwoe.1989.mc3","DOIUrl":"https://doi.org/10.1364/qwoe.1989.mc3","url":null,"abstract":"The nonlinear optical properties and the ultrafast dynamics of excitons in semiconductors are a major field of present semiconductor research. This interest is explained by the potential applications of excitonic nonlinearities as ultrafast optical switching devices in future optical communication systems. In a recent theoretical paper Hanamura /1/ discussed the advantages of excitons in a quantum well (QW) as a nonliner optical medium combining large 3rd order nonlinear susceptibility χ(3) with a fast response. The strong enhancement of is χ(3) explained as a consequence of both the macroscopic transition dipole moment of the exciton in a QW and the rapid radiative decay of the confined excitons. Hanamura calculated that an exciton in a QW should decay superradiantly through its macroscopic dipole transition moment within a few picoseconds. This superradiant decay requires, however, a coherent polarization of the material and will be strongly reduced if the spatial and temporal coherence of the excited excitons is destroyed by interaction of the excitons with their environment. Such a tight connection between the radiative lifetime τ\u0000 r\u0000 and the dephasing T2 has been recently predicted by Feldmann et al. /2/.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123790159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Resonant tunneling(RT) phenomenon in double-barrier(DB) heterostructure[1,2] has a conceptual similarity to a transmission of optical waves in Fabry-Perot (FP) resonator and involves time delay. Its dynamics should be investigated since they limit the ultimate speed of RT devices. Such a study will also clarify similarities and differences between electronic and optical waves. In our previous work[3], we investigated the tunneling escape process of electrons from AlAs/GaAs/AlAs DBRT structures. The measured escape rate was well explained by the idealized theory of FP-like model, which predicts the tunneling escape time τ in DBRT structures is given by |t| 2vk/Lw, when |t|2 ≪1, where t is the transmission coefficient through the barrier, vk is the group velocity of electrons and Lw is the well width. This predicted escape time is equal to the one calculated by the sequential tunneling model, suggesting that the tunneling escape time is not strongly dependent on the coherency of electron waves. This simple relation may not hold for the tunneling process between quantum wells(QW), where resonant coupling effect plays a more sophisticated role. To clarify the resonant tunneling phenomena between QWs, we report, in this paper, our study on electron dynamics in several different double GaAs QW structures separated by thin AlAs barrier, where the coupling condition between QWs was varied by electric fields. Tunneling process was studied at ~20K by measuring time resolved photoluminescence(PL). Picosecond pulses of a mode-locked dye laser were used to generate electron hole pairs in QWs, and the subsequent PL from particular QWs was monitored by a streak camera to determine the time variation of electron density in the QWs. Note that the electrons are lost either by recombination (radiative[4] and nonradiative) and/or by tunneling process. Since the mass of heavy hole is quite heavy, hole tunneling can be neglected at least in the initial phase of tunneling.
{"title":"Tunneling Dynamics and Resonant Coupling of Electrons in GaAs/AlAs Coupled Double Quantum Well Structures under Electric Fields","authors":"T. Matsusue, M. Tsuchiya, H. Sakaki","doi":"10.1364/qwoe.1989.wd1","DOIUrl":"https://doi.org/10.1364/qwoe.1989.wd1","url":null,"abstract":"Resonant tunneling(RT) phenomenon in double-barrier(DB) heterostructure[1,2] has a conceptual similarity to a transmission of optical waves in Fabry-Perot (FP) resonator and involves time delay. Its dynamics should be investigated since they limit the ultimate speed of RT devices. Such a study will also clarify similarities and differences between electronic and optical waves. In our previous work[3], we investigated the tunneling escape process of electrons from AlAs/GaAs/AlAs DBRT structures. The measured escape rate was well explained by the idealized theory of FP-like model, which predicts the tunneling escape time τ in DBRT structures is given by |t| 2vk/Lw, when |t|2 ≪1, where t is the transmission coefficient through the barrier, vk is the group velocity of electrons and Lw is the well width. This predicted escape time is equal to the one calculated by the sequential tunneling model, suggesting that the tunneling escape time is not strongly dependent on the coherency of electron waves. This simple relation may not hold for the tunneling process between quantum wells(QW), where resonant coupling effect plays a more sophisticated role. To clarify the resonant tunneling phenomena between QWs, we report, in this paper, our study on electron dynamics in several different double GaAs QW structures separated by thin AlAs barrier, where the coupling condition between QWs was varied by electric fields. Tunneling process was studied at ~20K by measuring time resolved photoluminescence(PL). Picosecond pulses of a mode-locked dye laser were used to generate electron hole pairs in QWs, and the subsequent PL from particular QWs was monitored by a streak camera to determine the time variation of electron density in the QWs. Note that the electrons are lost either by recombination (radiative[4] and nonradiative) and/or by tunneling process. Since the mass of heavy hole is quite heavy, hole tunneling can be neglected at least in the initial phase of tunneling.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132912936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).
{"title":"Physics of In(Ga)As-Based Heterostructures","authors":"G. Bastard, R. Ferreira","doi":"10.1364/qwoe.1989.ma4","DOIUrl":"https://doi.org/10.1364/qwoe.1989.ma4","url":null,"abstract":"The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115710567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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