Pub Date : 2015-08-08DOI: 10.1109/jrproc.1956.274900
J. Shmoys
The problem of modes of propagation of electromagnetic waves between a perfectly conducting earth and a gradually varying ionosphere is considered. The case of exponentially varying ionospheric parameters is solved in terms of Bessel functions. The propagation constant, the angle of arrival and the group velocity are calculated for the first few modes of propagation. It is shown that the results for the phase and group velocities and angle of arrival of low-order modes obtained when the ionosphere is assumed to be a perfectly conducting sheet at a height simply related to ionospheric parameters are very close to the true values. An application of this theory to the propagation of "tweeks" is discussed.
{"title":"Long-Range Propagation of Low-Frequency Radio Waves between the Earth and the Ionosphere","authors":"J. Shmoys","doi":"10.1109/jrproc.1956.274900","DOIUrl":"https://doi.org/10.1109/jrproc.1956.274900","url":null,"abstract":"The problem of modes of propagation of electromagnetic waves between a perfectly conducting earth and a gradually varying ionosphere is considered. The case of exponentially varying ionospheric parameters is solved in terms of Bessel functions. The propagation constant, the angle of arrival and the group velocity are calculated for the first few modes of propagation. It is shown that the results for the phase and group velocities and angle of arrival of low-order modes obtained when the ionosphere is assumed to be a perfectly conducting sheet at a height simply related to ionospheric parameters are very close to the true values. An application of this theory to the propagation of \"tweeks\" is discussed.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"50 1","pages":"163-170"},"PeriodicalIF":0.0,"publicationDate":"2015-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88447995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-16DOI: 10.1109/jrproc.1945.234544
D. L. Jaffe
The problem of distortion introduced into the modulation intelligence by tuned circuits is considered both theoretically and experimentally. Complex equations result when the effect of the intelligence modulation is considered. These equations, while not readily amenable to Fourier analysis, disclose that the distortion parameters are ΔW/BW and λ/BW where, ΔW/2π = peak-frequency swing λ/2π = modulation frequency BW = bandwidth in kilocycles measured at 3 decibels down. Double-tuned circuits critically coupled. If the effect of the modulation frequency is neglected, the equations resulting from a theoretical analysis are somewhat simplified and the distortion due to single- and double-tuned circuits can be formulated. Close agreement between calculated and measured distortion was obtained up to approximately a 5000-cycle-per-second modulation frequency. At this frequency the departure of the observed from calculated values was quite noticeable. Theoretical maximum-distortion limits for the single- and double-tuned circuits are derived. For the single-tuned circuit the theoretical maximum distortion is Dnmax (single-tuned circuit) = 2λ/ΔW·100. For the double-tuned circuit it is Dnmax (double-tuned circuit) = 4λ/ΔW·100 A conservative design figure relating bandwidth to frequency swing in order to insure distortion-free transmission to 15,000 cycles per second was experimentally found to be, ΔW/BW = 1/4.
{"title":"A Theoretical and Experimental Investigation of Tuned-Circuit Distortion in Frequency-Modulation Systems","authors":"D. L. Jaffe","doi":"10.1109/jrproc.1945.234544","DOIUrl":"https://doi.org/10.1109/jrproc.1945.234544","url":null,"abstract":"The problem of distortion introduced into the modulation intelligence by tuned circuits is considered both theoretically and experimentally. Complex equations result when the effect of the intelligence modulation is considered. These equations, while not readily amenable to Fourier analysis, disclose that the distortion parameters are ΔW/BW and λ/BW where, ΔW/2π = peak-frequency swing λ/2π = modulation frequency BW = bandwidth in kilocycles measured at 3 decibels down. Double-tuned circuits critically coupled. If the effect of the modulation frequency is neglected, the equations resulting from a theoretical analysis are somewhat simplified and the distortion due to single- and double-tuned circuits can be formulated. Close agreement between calculated and measured distortion was obtained up to approximately a 5000-cycle-per-second modulation frequency. At this frequency the departure of the observed from calculated values was quite noticeable. Theoretical maximum-distortion limits for the single- and double-tuned circuits are derived. For the single-tuned circuit the theoretical maximum distortion is Dnmax (single-tuned circuit) = 2λ/ΔW·100. For the double-tuned circuit it is Dnmax (double-tuned circuit) = 4λ/ΔW·100 A conservative design figure relating bandwidth to frequency swing in order to insure distortion-free transmission to 15,000 cycles per second was experimentally found to be, ΔW/BW = 1/4.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"13 1","pages":"318-333"},"PeriodicalIF":0.0,"publicationDate":"2013-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82891784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-10-26DOI: 10.1109/JRPROC.1961.287775
M. Minsky
The problems of heuristic programming-of making computers solve really difficult problems-are divided into five main areas: Search, Pattern-Recognition, Learning, Planning, and Induction. A computer can do, in a sense, only what it is told to do. But even when we do not know how to solve a certain problem, we may program a machine (computer) to Search through some large space of solution attempts. Unfortunately, this usually leads to an enormously inefficient process. With Pattern-Recognition techniques, efficiency can often be improved, by restricting the application of the machine's methods to appropriate problems. Pattern-Recognition, together with Learning, can be used to exploit generalizations based on accumulated experience, further reducing search. By analyzing the situation, using Planning methods, we may obtain a fundamental improvement by replacing the given search with a much smaller, more appropriate exploration. To manage broad classes of problems, machines will need to construct models of their environments, using some scheme for Induction. Wherever appropriate, the discussion is supported by extensive citation of the literature and by descriptions of a few of the most successful heuristic (problem-solving) programs constructed to date.
{"title":"Steps toward Artificial Intelligence","authors":"M. Minsky","doi":"10.1109/JRPROC.1961.287775","DOIUrl":"https://doi.org/10.1109/JRPROC.1961.287775","url":null,"abstract":"The problems of heuristic programming-of making computers solve really difficult problems-are divided into five main areas: Search, Pattern-Recognition, Learning, Planning, and Induction. A computer can do, in a sense, only what it is told to do. But even when we do not know how to solve a certain problem, we may program a machine (computer) to Search through some large space of solution attempts. Unfortunately, this usually leads to an enormously inefficient process. With Pattern-Recognition techniques, efficiency can often be improved, by restricting the application of the machine's methods to appropriate problems. Pattern-Recognition, together with Learning, can be used to exploit generalizations based on accumulated experience, further reducing search. By analyzing the situation, using Planning methods, we may obtain a fundamental improvement by replacing the given search with a much smaller, more appropriate exploration. To manage broad classes of problems, machines will need to construct models of their environments, using some scheme for Induction. Wherever appropriate, the discussion is supported by extensive citation of the literature and by descriptions of a few of the most successful heuristic (problem-solving) programs constructed to date.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"71 1","pages":"8-30"},"PeriodicalIF":0.0,"publicationDate":"1995-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88041083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In less than five years, loran, the American embodiment of a new method of navigation, has grown from a concept into a service used by tens of thousands of navigators over three tenths of the surface of the earth. Even under the stress of military urgency, the direct development cost of this system has been less than two per cent of the seventy-five million dollars so far spent for operational equipment. The first part of the present paper describes the history of this program as an example of the efficient "mass production" of research and development under the National Defense Research Committee. A second section deals with the fundamental concepts of hyperbolic navigation and gives some details regarding the kinds of equipment now employed for transmission, reception and interpretation of pulse signals for this service. The third part of the paper discusses the potential usefulness of hyperbolic navigation and suggests some of the many devices which will simplify the navigation of the future and enhance its reliability. The final section mentions the organizational problem immediately before us.
{"title":"An Introduction to Loran","authors":"J. Pierce","doi":"10.1109/62.60674","DOIUrl":"https://doi.org/10.1109/62.60674","url":null,"abstract":"In less than five years, loran, the American embodiment of a new method of navigation, has grown from a concept into a service used by tens of thousands of navigators over three tenths of the surface of the earth. Even under the stress of military urgency, the direct development cost of this system has been less than two per cent of the seventy-five million dollars so far spent for operational equipment. The first part of the present paper describes the history of this program as an example of the efficient \"mass production\" of research and development under the National Defense Research Committee. A second section deals with the fundamental concepts of hyperbolic navigation and gives some details regarding the kinds of equipment now employed for transmission, reception and interpretation of pulse signals for this service. The third part of the paper discusses the potential usefulness of hyperbolic navigation and suggests some of the many devices which will simplify the navigation of the future and enhance its reliability. The final section mentions the organizational problem immediately before us.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"58 1","pages":"216-234"},"PeriodicalIF":0.0,"publicationDate":"1990-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83945319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1962-12-01DOI: 10.1109/JRPROC.1962.288259
I. Melngailis, R. Rediker
The madistor is a new active device which makes use of the effects of a magnetic field on an injection plasma in a semiconductor. The formation of an injection plasma has been observed in p-type InSb at temperatures below 100°K as donor traps become saturated by electrons injected through a forward biased n+p junction. In an appropriately designed n+pp+ diode, the saturation of traps and the subsequent increase in electron lifetime bring about an abrupt decrease of base resistance, and a negative resistance region is observed in the current-voltage characteristic. Because of the high mobility of electrons in InSb (5×105 cm2/vsec) the plasma can be appreciably deflected and deformed by transverse magnetic fields of the order of 10 gauss. The possibility of controlling the position of a plasma inside a solid by means of a magnetic field can be utilized in a number of different types of madistors in which the input circuit is isolated from the output. The operation at 77°K of four types of InSb madistors has been studied. The first makes use of a specially designed n+ pp+ diode mounted in the air gap of a small ferromagnetic-core electromagnet. A small change in the electromagnet winding current produces a magnetic field at the diode and causes a larger change in diode current. Typically an increase in mmf of 200-ma turns produces an additional magnetic field intensity of 5 gauss which decreases the diode current by 10 ma.
{"title":"The Madistor-A Magnetically Controlled Semiconductor Plasma Device","authors":"I. Melngailis, R. Rediker","doi":"10.1109/JRPROC.1962.288259","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288259","url":null,"abstract":"The madistor is a new active device which makes use of the effects of a magnetic field on an injection plasma in a semiconductor. The formation of an injection plasma has been observed in p-type InSb at temperatures below 100°K as donor traps become saturated by electrons injected through a forward biased n+p junction. In an appropriately designed n+pp+ diode, the saturation of traps and the subsequent increase in electron lifetime bring about an abrupt decrease of base resistance, and a negative resistance region is observed in the current-voltage characteristic. Because of the high mobility of electrons in InSb (5×105 cm2/vsec) the plasma can be appreciably deflected and deformed by transverse magnetic fields of the order of 10 gauss. The possibility of controlling the position of a plasma inside a solid by means of a magnetic field can be utilized in a number of different types of madistors in which the input circuit is isolated from the output. The operation at 77°K of four types of InSb madistors has been studied. The first makes use of a specially designed n+ pp+ diode mounted in the air gap of a small ferromagnetic-core electromagnet. A small change in the electromagnet winding current produces a magnetic field at the diode and causes a larger change in diode current. Typically an increase in mmf of 200-ma turns produces an additional magnetic field intensity of 5 gauss which decreases the diode current by 10 ma.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"10 1","pages":"2428-2435"},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78416691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1962-12-01DOI: 10.1109/JRPROC.1962.288260
C. L. Ruthroff, W. Bodtmann
This paper contains a discussion of several major problem areas concerning the design, construction, systems application and threshold improving properties of the Frequency Compression Demodulator. A complete description of an experimental broad-band demodulator is presented. This demodulator is intended for use in an intercontinental satellite communication system and is suitable for either television or telephone service. Circuit details, performance data, and a measured comparison with FM are presented.
{"title":"Design and Performance of a Broad-Band FM Demodulator with Frequency Compression","authors":"C. L. Ruthroff, W. Bodtmann","doi":"10.1109/JRPROC.1962.288260","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288260","url":null,"abstract":"This paper contains a discussion of several major problem areas concerning the design, construction, systems application and threshold improving properties of the Frequency Compression Demodulator. A complete description of an experimental broad-band demodulator is presented. This demodulator is intended for use in an intercontinental satellite communication system and is suitable for either television or telephone service. Circuit details, performance data, and a measured comparison with FM are presented.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"1 1","pages":"2436-2445"},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83049580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1962-12-01DOI: 10.1109/JRPROC.1962.288264
J. Chisholm, W. Morrow, B. Nichols, J. Roche, A. E. Teachman
Measurements are reported on beyond-the-horizon propagation losses at 400 Mcps. Data are given on the losses and their variations from 98 to 830 mi beyond the horizon. The transmission loss between isotropic antennas varies from about 190 db at 100 mi to about 300 db at 800 mi distance. Also described are measurements of frequency-selective fading, space diversity, and variations in the angle of arrival of the signals.
{"title":"Properties of 400 Mcps Long-Distance Tropospheric Circuits","authors":"J. Chisholm, W. Morrow, B. Nichols, J. Roche, A. E. Teachman","doi":"10.1109/JRPROC.1962.288264","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288264","url":null,"abstract":"Measurements are reported on beyond-the-horizon propagation losses at 400 Mcps. Data are given on the losses and their variations from 98 to 830 mi beyond the horizon. The transmission loss between isotropic antennas varies from about 190 db at 100 mi to about 300 db at 800 mi distance. Also described are measurements of frequency-selective fading, space diversity, and variations in the angle of arrival of the signals.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"63 1","pages":"2464-2482"},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77554062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1962-12-01DOI: 10.1109/JRPROC.1962.288258
N. Holonyak
Experimental studies of double injection (DI) negative resistance phenomena in GaAs, Si, and Ge are presented. V-I characteristics, switching, trapping, and photosensitivity properties of GaAs DI p-i-n diodes, fabricated by diffusion and alloying processes on semi-insulating crystals and in other cases fabricated via epitaxial processes with Cu-doped i regions, are described. Similar studies and data are presented on Si DI p-i-n diodes prepared via diffusion and/or alloying processes. Silicon DI p-i-n diodes are described which have been doped with various deep level impurities such as Au, Zn, Cd, or Co and which, depending upon the kind and concentration of deep level impurities, display a wide range of behavior including useful photosensitivity, switching, and voltage regulation properties. Brief mention is made of Ge DI p-i-n diodes fabricated on n-type crystals counter-doped with Cu, Fe, Ni, Co, or Mn. A comparison is made between experimental results and current theories of double injection effects. As might be expected, existing theories do not completely account for the experimental situation, e.g., breakdown to constant voltage in certain units and phenomena which seem closely related to plasma effects. In addition to various practical implications, including possibilities for a noninteracting diode negative resistance matrix, low voltage regulator diodes, photosensitive charge-storage diodes, and higher power microwave switching p-i-n diodes, the significance of deep level doping and possible and actual effects (e.g., secondary switching effects) on epitaxial Si devices are described.
对砷化镓(GaAs)、硅(Si)和锗(Ge)中双注入(DI)负电阻现象进行了实验研究。本文描述了在半绝缘晶体上通过扩散和合金化工艺制备的GaAs DI p-i-n二极管的V-I特性、开关、捕获和光敏性能，以及在其他情况下通过带cu掺杂i区的外延工艺制备的GaAs DI p-i-n二极管。通过扩散和/或合金化工艺制备的Si - DI - p-i-n二极管也有类似的研究和数据。本文描述了硅DI p-i-n二极管，其中掺杂了各种深能级杂质，如Au, Zn, Cd或Co，并且根据深能级杂质的种类和浓度，显示出广泛的行为，包括有用的光敏性，开关和电压调节特性。简要地提到了用Cu, Fe, Ni, Co或Mn反掺杂的n型晶体制造的Ge DI p-i-n二极管。对双注入效应的实验结果与现有理论进行了比较。正如可以预料的那样，现有的理论并不能完全解释实验情况，例如，在某些单元中击穿到恒电压，以及似乎与等离子体效应密切相关的现象。除了各种实际意义之外，包括非相互作用二极管负电阻矩阵、低压稳压二极管、光敏电荷存储二极管和更高功率微波开关p-i-n二极管的可能性，还描述了深能级掺杂的重要性以及对外延硅器件可能的和实际的影响(例如，二次开关效应)。
{"title":"Double Injection Diodes and Related DI Phenomena in Semiconductors","authors":"N. Holonyak","doi":"10.1109/JRPROC.1962.288258","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288258","url":null,"abstract":"Experimental studies of double injection (DI) negative resistance phenomena in GaAs, Si, and Ge are presented. V-I characteristics, switching, trapping, and photosensitivity properties of GaAs DI p-i-n diodes, fabricated by diffusion and alloying processes on semi-insulating crystals and in other cases fabricated via epitaxial processes with Cu-doped i regions, are described. Similar studies and data are presented on Si DI p-i-n diodes prepared via diffusion and/or alloying processes. Silicon DI p-i-n diodes are described which have been doped with various deep level impurities such as Au, Zn, Cd, or Co and which, depending upon the kind and concentration of deep level impurities, display a wide range of behavior including useful photosensitivity, switching, and voltage regulation properties. Brief mention is made of Ge DI p-i-n diodes fabricated on n-type crystals counter-doped with Cu, Fe, Ni, Co, or Mn. A comparison is made between experimental results and current theories of double injection effects. As might be expected, existing theories do not completely account for the experimental situation, e.g., breakdown to constant voltage in certain units and phenomena which seem closely related to plasma effects. In addition to various practical implications, including possibilities for a noninteracting diode negative resistance matrix, low voltage regulator diodes, photosensitive charge-storage diodes, and higher power microwave switching p-i-n diodes, the significance of deep level doping and possible and actual effects (e.g., secondary switching effects) on epitaxial Si devices are described.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"31 1","pages":"2421-2428"},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83586689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1962-12-01DOI: 10.1109/JRPROC.1962.288261
S. Yando
A solid-state display device based on a new principle is described. The device consists of a thin, flat panel of piezoelectric material supporting an electroluminescent layer. Voltage pulses, applied to a few electrodes on the periphery of the panel, introduce traveling elastic waves into the piezoelectric material. Electric fields which accompany the waves interact with the electroluminescent layer to produce a localized "spot" of illumination. The position of the spot is controlled by varying the relative timing of the pulses to produce either a raster or an oscilloscope pattern. Means for continuously modulating the light intensity of the spot are also described.
{"title":"A Solid-State Display Device","authors":"S. Yando","doi":"10.1109/JRPROC.1962.288261","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288261","url":null,"abstract":"A solid-state display device based on a new principle is described. The device consists of a thin, flat panel of piezoelectric material supporting an electroluminescent layer. Voltage pulses, applied to a few electrodes on the periphery of the panel, introduce traveling elastic waves into the piezoelectric material. Electric fields which accompany the waves interact with the electroluminescent layer to produce a localized \"spot\" of illumination. The position of the spot is controlled by varying the relative timing of the pulses to produce either a raster or an oscilloscope pattern. Means for continuously modulating the light intensity of the spot are also described.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"1 1","pages":"2445-2451"},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89435490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1962-12-01DOI: 10.1109/JRPROC.1962.288263
Norman H. Meyers
As thin-film cryotron circuits become faster, the detailed properties of the components themselves have an increasing effect on over-all circuit operation. When a cryotron switches from the superconducting to the resistive state in a fast circuit, its inductive characteristics can change enough to add appreciable delay and dissipation to its driving circuit. The inductive and resistive transition of the component can be accompanied by diamagnetic hysteresis and by eddy-current-damping effects, which add to dissipation and further delay the switching of the component. These component and circuit effects are complex and interrelated, but considerable insight is gained by analyzing separately various portions of the general behavior.
{"title":"Switching Speed and Dissipation in Fast, Thin-Film Cryotron Circuits","authors":"Norman H. Meyers","doi":"10.1109/JRPROC.1962.288263","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288263","url":null,"abstract":"As thin-film cryotron circuits become faster, the detailed properties of the components themselves have an increasing effect on over-all circuit operation. When a cryotron switches from the superconducting to the resistive state in a fast circuit, its inductive characteristics can change enough to add appreciable delay and dissipation to its driving circuit. The inductive and resistive transition of the component can be accompanied by diamagnetic hysteresis and by eddy-current-damping effects, which add to dissipation and further delay the switching of the component. These component and circuit effects are complex and interrelated, but considerable insight is gained by analyzing separately various portions of the general behavior.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":"32 1","pages":"2452-2464"},"PeriodicalIF":0.0,"publicationDate":"1962-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87946411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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