Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184530
V. Khmelev, V. P. Sevodin, Vladimir I. Shesternin, Y. Kuzovnikov, S. V. Levin
Wines were obtained on a base of Altay region early grape varieties with using of different methods such as ultrasonic and enzyme treatment. Enzyme treatment of marc was increased intensity of wine coloring. Ultrasonic treatment of marc was facilitated to accumulation of polythenols and anthocyanins and significantly influenced on quantity of monomeric fraction of anthocyanins. It was determined taste estimation of dry wines. Quantitative ratio of coloring substances was found.
{"title":"Using of ultrasound in grape wine making process","authors":"V. Khmelev, V. P. Sevodin, Vladimir I. Shesternin, Y. Kuzovnikov, S. V. Levin","doi":"10.1109/EDM.2015.7184530","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184530","url":null,"abstract":"Wines were obtained on a base of Altay region early grape varieties with using of different methods such as ultrasonic and enzyme treatment. Enzyme treatment of marc was increased intensity of wine coloring. Ultrasonic treatment of marc was facilitated to accumulation of polythenols and anthocyanins and significantly influenced on quantity of monomeric fraction of anthocyanins. It was determined taste estimation of dry wines. Quantitative ratio of coloring substances was found.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123840169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184597
M. A. Novikov, P. Rashitov, M. Astashev, Sylvester C. Nnamchi
Special features of processes of switching of thyristor AC bridges, as a part of a high-power thyristor controlled phase shifter (TCPS), are considered. Infuence of mutual magnetic coupling of secondary windings of an excitation transformer on an interval of safety switching of a thyristor switch of TCPS is experimentally discovered and theoretically justifed. Results of experiments, confrming presence of an effect of serial switching of secondary windings of an excitation transformer in an interval of slow (long period) switching and an effect of acceleration of a process of switching in an interval of fast (shot period) switching, are presented.
{"title":"Experimental research of multiple switching in a thyristor controlled phase shifter","authors":"M. A. Novikov, P. Rashitov, M. Astashev, Sylvester C. Nnamchi","doi":"10.1109/EDM.2015.7184597","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184597","url":null,"abstract":"Special features of processes of switching of thyristor AC bridges, as a part of a high-power thyristor controlled phase shifter (TCPS), are considered. Infuence of mutual magnetic coupling of secondary windings of an excitation transformer on an interval of safety switching of a thyristor switch of TCPS is experimentally discovered and theoretically justifed. Results of experiments, confrming presence of an effect of serial switching of secondary windings of an excitation transformer in an interval of slow (long period) switching and an effect of acceleration of a process of switching in an interval of fast (shot period) switching, are presented.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130477807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184520
Victor V. Tereshkov, A. A. Geltser, E. Rogozhnikov
The possibility of utilizing the 3D Earth surface map for determining fixed electromagnetic emitter location by the passive monostatic observer was reviewed. The map is being obtained by remote sensing.
讨论了被动单站观测站利用三维地球表面图确定固定电磁发射器位置的可能性。这张地图是通过遥感获得的。
{"title":"Utilizing the 3D Earth surface maps in the monostatic emitter location task","authors":"Victor V. Tereshkov, A. A. Geltser, E. Rogozhnikov","doi":"10.1109/EDM.2015.7184520","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184520","url":null,"abstract":"The possibility of utilizing the 3D Earth surface map for determining fixed electromagnetic emitter location by the passive monostatic observer was reviewed. The map is being obtained by remote sensing.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134275264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184512
V. Meikshan, V. Korchagin
Multiservice telecommunication network is studied under adaptive routing in accordance with LLR method and the influence of equipment faults on network performance at connection level is analyzed. The approach is formulated to calculate call blocking probability and evaluate mean increment of this probability caused by limited reliability of network elements. The applicability of proposed mathematical model is demonstrated by numerical results.
{"title":"Performance evaluation of multiservice network with unreliable elements","authors":"V. Meikshan, V. Korchagin","doi":"10.1109/EDM.2015.7184512","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184512","url":null,"abstract":"Multiservice telecommunication network is studied under adaptive routing in accordance with LLR method and the influence of equipment faults on network performance at connection level is analyzed. The approach is formulated to calculate call blocking probability and evaluate mean increment of this probability caused by limited reliability of network elements. The applicability of proposed mathematical model is demonstrated by numerical results.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133447094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184505
Valentina M. Goychuk, V. Razinkin, M. K. Adrianov, A. Vikhorev, A. Mekhtiev
The paper presents a circuit solutions and the method of calculation of the elliptic flters based on the lumped elements. Low level of the real losses is achieved using an partial parallel-oscillatory circuit switching-on. The presence of additional corrective elements at the flter input and output provides in-band ripple, which is required.
{"title":"Elliptic filters for television and telecommunications","authors":"Valentina M. Goychuk, V. Razinkin, M. K. Adrianov, A. Vikhorev, A. Mekhtiev","doi":"10.1109/EDM.2015.7184505","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184505","url":null,"abstract":"The paper presents a circuit solutions and the method of calculation of the elliptic flters based on the lumped elements. Low level of the real losses is achieved using an partial parallel-oscillatory circuit switching-on. The presence of additional corrective elements at the flter input and output provides in-band ripple, which is required.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133583021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184478
L. S. Golobokova, Yuri V. Nastaushev, F. Dultsev, N. Kryzhanovskaya
In this paper, particularities of ordered silicon nanopillars (Si NP) arrays formation by mean electron beam lithography and dry etching were studied. The optical and electrical properties of the Si NPs were investigated.
本文研究了平均电子束光刻和干刻蚀制备有序硅纳米柱阵列的特殊性。研究了硅纳米粒子的光学和电学性质。
{"title":"2D silicon nanopillars arrays for photonics","authors":"L. S. Golobokova, Yuri V. Nastaushev, F. Dultsev, N. Kryzhanovskaya","doi":"10.1109/EDM.2015.7184478","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184478","url":null,"abstract":"In this paper, particularities of ordered silicon nanopillars (Si NP) arrays formation by mean electron beam lithography and dry etching were studied. The optical and electrical properties of the Si NPs were investigated.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132949421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184493
M. O. Hrapov, V. Gridchin, S. Kalinin
In this paper we consider the numerical simulation TCAD Sentaurus of the vertical NPN and PNP transistors fabricated on complementary bipolar technology with a P-epitaxial layer. As a result, technological parameters associated with the buried and epitaxial layers have been defined. These parameters have provided the required voltage value of collector-emitter breakdown. The comparison of the transistor output characteristics with the experimental data has showed the adequate accuracy of simulation for practical use.
{"title":"TCAD — Simulation of the complementary bipolar pair of transistors","authors":"M. O. Hrapov, V. Gridchin, S. Kalinin","doi":"10.1109/EDM.2015.7184493","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184493","url":null,"abstract":"In this paper we consider the numerical simulation TCAD Sentaurus of the vertical NPN and PNP transistors fabricated on complementary bipolar technology with a P-epitaxial layer. As a result, technological parameters associated with the buried and epitaxial layers have been defined. These parameters have provided the required voltage value of collector-emitter breakdown. The comparison of the transistor output characteristics with the experimental data has showed the adequate accuracy of simulation for practical use.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133469484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184570
I. O. Bessonov, S. Kharitonov, D. Makarov, M. Zharkov
In this article the direct method of synthesis of regulators is offered on the example of the current loop, as internal loop of the double-loop subordinate control system for a buck dc-dc converter.
本文以电流环作为降压型dc-dc变换器双环从属控制系统的内环为例，给出了直接合成稳压器的方法。
{"title":"Synthesis of circuit of regulation of current for buck DC-DC converter. Methodical aspect","authors":"I. O. Bessonov, S. Kharitonov, D. Makarov, M. Zharkov","doi":"10.1109/EDM.2015.7184570","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184570","url":null,"abstract":"In this article the direct method of synthesis of regulators is offered on the example of the current loop, as internal loop of the double-loop subordinate control system for a buck dc-dc converter.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133175742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184495
V. Malyutina-Bronskaya, V. B. Zalesskiĭ, A. Konoĭko, V. S. Malyshev
Construction and method of formation of silicon solar cells with vertical p-n junction has been presented. The solar cell should contain a groove within the active light-absorbing area, in order to reduce the reflection of solar radiation. Multiplied module consists of the four elements with different topology. This construction could be transparent in the long-wavelength part of the spectrum beyond the edge of the fundamental absorption band.
{"title":"Silicon solar cells with vertical p-n junctions for hybrid solar cells","authors":"V. Malyutina-Bronskaya, V. B. Zalesskiĭ, A. Konoĭko, V. S. Malyshev","doi":"10.1109/EDM.2015.7184495","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184495","url":null,"abstract":"Construction and method of formation of silicon solar cells with vertical p-n junction has been presented. The solar cell should contain a groove within the active light-absorbing area, in order to reduce the reflection of solar radiation. Multiplied module consists of the four elements with different topology. This construction could be transparent in the long-wavelength part of the spectrum beyond the edge of the fundamental absorption band.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125220869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-13DOI: 10.1109/EDM.2015.7184549
S. A. Dvoretskiy, A. Zverev, Yu. S. Makarov, E. Mikhantiev
The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.
{"title":"High speed low power 384×288 readout integrated circuit for MWIR and LWIR MCT based FPA","authors":"S. A. Dvoretskiy, A. Zverev, Yu. S. Makarov, E. Mikhantiev","doi":"10.1109/EDM.2015.7184549","DOIUrl":"https://doi.org/10.1109/EDM.2015.7184549","url":null,"abstract":"The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125124058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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