Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773708
K. A. Black, P. Abraham, A. Karim, J. Bowers, E. Hu
This paper investigates the luminescence properties of InP/InGaAsP multiple quantum well (MQW) laser active regions. Room temperature photoluminescence studies were performed on doped and undoped active regions before fusion, after fusion, after thermal cycling, and after rapid thermal annealing. It is shown that quantum well luminescence intensity degrades considerably after wafer fusion. The introduction of a superlattice defect blocking layer at the fusing surface of the MQW active region not only prevents degradation of the luminescence, but actually improves the luminescence of the MQW active region through the fusion process by a factor of four.
{"title":"Improved luminescence from InGaAsP/InP MQW active regions using a wafer fused superlattice barrier","authors":"K. A. Black, P. Abraham, A. Karim, J. Bowers, E. Hu","doi":"10.1109/ICIPRM.1999.773708","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773708","url":null,"abstract":"This paper investigates the luminescence properties of InP/InGaAsP multiple quantum well (MQW) laser active regions. Room temperature photoluminescence studies were performed on doped and undoped active regions before fusion, after fusion, after thermal cycling, and after rapid thermal annealing. It is shown that quantum well luminescence intensity degrades considerably after wafer fusion. The introduction of a superlattice defect blocking layer at the fusing surface of the MQW active region not only prevents degradation of the luminescence, but actually improves the luminescence of the MQW active region through the fusion process by a factor of four.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123691063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773630
Y. Sakata, K. Komatsu
Selective MOVPE technology is widely used for realizing advanced photonic integrated devices. Especially, narrow-stripe selective (NS) MOVPE which performs in less than 2 /spl mu/m-wide open-stripe region can achieve not only in-plane bandgap control but also direct waveguide formation without any semiconductor etching process. Therefore, NS-MOVPE is the powerful method for achieving highly uniform device characteristics. However, the growth mechanism of NS-MOVPE is very complicated due to the surface migration effect on both a dielectric mask and a semiconductor. This paper shows the recent progress in the study of the surface migration effect for understanding the mechanism of NS-MOVPE and introduce the novel pulse-mode NS-MOVPE for achieving an excellent crystal-quality of strained InGaAsP MQW structures.
选择性MOVPE技术被广泛用于实现先进的光子集成器件。特别是窄带选择性(NS) MOVPE，它可以在小于2 /spl μ m /m宽的开放条带区域内工作，不仅可以实现面内带隙控制，而且可以直接形成波导，而无需任何半导体刻蚀过程。因此，NS-MOVPE是实现高度均匀器件特性的有力方法。然而，NS-MOVPE的生长机制非常复杂，因为在介质掩膜和半导体上都存在表面迁移效应。本文介绍了表面迁移效应研究的最新进展，为理解NS-MOVPE的机理提供了理论基础，并介绍了一种新型脉冲模式NS-MOVPE，用于实现应变InGaAsP MQW结构优异的晶体质量。
{"title":"Narrow-stripe selective MOVPE technology for high-quality strained InGaAsP MQW structures","authors":"Y. Sakata, K. Komatsu","doi":"10.1109/ICIPRM.1999.773630","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773630","url":null,"abstract":"Selective MOVPE technology is widely used for realizing advanced photonic integrated devices. Especially, narrow-stripe selective (NS) MOVPE which performs in less than 2 /spl mu/m-wide open-stripe region can achieve not only in-plane bandgap control but also direct waveguide formation without any semiconductor etching process. Therefore, NS-MOVPE is the powerful method for achieving highly uniform device characteristics. However, the growth mechanism of NS-MOVPE is very complicated due to the surface migration effect on both a dielectric mask and a semiconductor. This paper shows the recent progress in the study of the surface migration effect for understanding the mechanism of NS-MOVPE and introduce the novel pulse-mode NS-MOVPE for achieving an excellent crystal-quality of strained InGaAsP MQW structures.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125089245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773650
D. Jahan, D. Soderstrom, S. Lourdudoss
This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe.
{"title":"LP-HVPE growth of S, Fe and undoped InP","authors":"D. Jahan, D. Soderstrom, S. Lourdudoss","doi":"10.1109/ICIPRM.1999.773650","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773650","url":null,"abstract":"This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123733413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773770
L. Samuelson, D. Hessman, J. Persson, M. Pistol, C. Pryor, W. Seifert
Summary form only given. Macro- as well as micro-photoluminescence studies of InP/GaInP quantum dots (QDs) fabricated via the Stranski-Krastanow growth mode always show multiple luminescence lines, with an unexpected spectral width even for an individual QD. The origin of this unusual behavior has been debated and until now no clear picture has emerged. We have recently developed a new spectroscopic tool in which we can follow the luminescence of a single QD during the application of an electric field via a transparent Schottky barrier on the surface of the GaInP barrier material. This enables us to follow the evolution of each of the peaks as function of applied bias, with respect to (i) spectral shifts, (ii) intensities and (iii) line-widths. We will present experimental data and computer simulation results which show that during optical illumination with intensities such that luminescence is detected, a condition very close to flat-band is obtained and an open-circuit voltage corresponding to the Schottky-barrier height is detected.
{"title":"Tuning of electron occupancy in luminescence of single InP/GaInP quantum dot","authors":"L. Samuelson, D. Hessman, J. Persson, M. Pistol, C. Pryor, W. Seifert","doi":"10.1109/ICIPRM.1999.773770","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773770","url":null,"abstract":"Summary form only given. Macro- as well as micro-photoluminescence studies of InP/GaInP quantum dots (QDs) fabricated via the Stranski-Krastanow growth mode always show multiple luminescence lines, with an unexpected spectral width even for an individual QD. The origin of this unusual behavior has been debated and until now no clear picture has emerged. We have recently developed a new spectroscopic tool in which we can follow the luminescence of a single QD during the application of an electric field via a transparent Schottky barrier on the surface of the GaInP barrier material. This enables us to follow the evolution of each of the peaks as function of applied bias, with respect to (i) spectral shifts, (ii) intensities and (iii) line-widths. We will present experimental data and computer simulation results which show that during optical illumination with intensities such that luminescence is detected, a condition very close to flat-band is obtained and an open-circuit voltage corresponding to the Schottky-barrier height is detected.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127609986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773626
R. Schreiner, M. Mulot, J. Wiedmann, W. Coenning, J. Porsche, J. Gentner, M. Berroth, F. Scholz, H. Schwizer
We report on dynamic measurements on antiphase complex coupled 1.55 /spl mu/m DFB lasers. The antiphase complex coupling mechanism is realized by periodically etching the active layer and quarternary InGaAsP overgrowth. This new fabrication approach results in very narrow linewidths measured on devices with rather short resonator lengths. The minimum linewidth for a 375 /spl mu/m long ridge waveguide laser was only 250 kHz at an optical output power of 4 mW. The RC-limited 3dB-bandwidth for those devices was /spl sim/6 GHz. Using circuit model corrections, the intrinsic bandwidth limitation of those lasers was found to be 17.4 GHz.
{"title":"Dynamic measurements on narrow linewidth complex coupled 1.55 /spl mu/m DFB lasers with gain and index grating in antiphase","authors":"R. Schreiner, M. Mulot, J. Wiedmann, W. Coenning, J. Porsche, J. Gentner, M. Berroth, F. Scholz, H. Schwizer","doi":"10.1109/ICIPRM.1999.773626","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773626","url":null,"abstract":"We report on dynamic measurements on antiphase complex coupled 1.55 /spl mu/m DFB lasers. The antiphase complex coupling mechanism is realized by periodically etching the active layer and quarternary InGaAsP overgrowth. This new fabrication approach results in very narrow linewidths measured on devices with rather short resonator lengths. The minimum linewidth for a 375 /spl mu/m long ridge waveguide laser was only 250 kHz at an optical output power of 4 mW. The RC-limited 3dB-bandwidth for those devices was /spl sim/6 GHz. Using circuit model corrections, the intrinsic bandwidth limitation of those lasers was found to be 17.4 GHz.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124499726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773651
C. Chellic, D. Cui, S. Hubbard, A. Eisenbach, D. Pavlidis, S. Krawczyk, B. Sermage
Heavily C-doped p-type InGaAs has been successfully grown by metalorganic chemical vapor deposition using CBr/sub 4/ as a C precursor. A doping concentration as high as 2/spl times/10/sup 19/ cm/sup -3/ has been reached for as-grown (non-annealed) samples. Photoluminescence measurements have been employed to obtain and compare the non-radiative lifetimes in C- and Zn-doped InGaAs. The minority carrier lifetime of as-grown InGaAs:C samples is significantly lower than for as-grown InGaAs:Zn for the same doping concentration. Carrier lifetimes range from 373 ps (p=6.6/spl times/10/sup 16/ cm/sup -3/) to 1.5 ps (p=2.3/spl times/10/sup 19/ cm/sup -3/) in as-grown InGaAs:C, and from 6.8 ns (p=5.0/spl times/10/sup 16/ cm/sup -3/) to 16.8 ps (p=2.1/spl times/10/sup 19/ cm/sup -3/) in InGaAs:Zn, respectively. InGaAs:Zn grown at the same low temperature (450/spl deg/C) as InGaAs:C has a higher minority carrier lifetime. The minority carrier lifetime difference between InGaAs:Zn and InGaAs:C samples is attributed to lower V/III ratio and hydrogen passivation, as well as, lower growth temperatures for the carbon doped InGaAs samples.
{"title":"Minority carrier lifetime in MOCVD-grown C- and Zn-doped InGaAs","authors":"C. Chellic, D. Cui, S. Hubbard, A. Eisenbach, D. Pavlidis, S. Krawczyk, B. Sermage","doi":"10.1109/ICIPRM.1999.773651","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773651","url":null,"abstract":"Heavily C-doped p-type InGaAs has been successfully grown by metalorganic chemical vapor deposition using CBr/sub 4/ as a C precursor. A doping concentration as high as 2/spl times/10/sup 19/ cm/sup -3/ has been reached for as-grown (non-annealed) samples. Photoluminescence measurements have been employed to obtain and compare the non-radiative lifetimes in C- and Zn-doped InGaAs. The minority carrier lifetime of as-grown InGaAs:C samples is significantly lower than for as-grown InGaAs:Zn for the same doping concentration. Carrier lifetimes range from 373 ps (p=6.6/spl times/10/sup 16/ cm/sup -3/) to 1.5 ps (p=2.3/spl times/10/sup 19/ cm/sup -3/) in as-grown InGaAs:C, and from 6.8 ns (p=5.0/spl times/10/sup 16/ cm/sup -3/) to 16.8 ps (p=2.1/spl times/10/sup 19/ cm/sup -3/) in InGaAs:Zn, respectively. InGaAs:Zn grown at the same low temperature (450/spl deg/C) as InGaAs:C has a higher minority carrier lifetime. The minority carrier lifetime difference between InGaAs:Zn and InGaAs:C samples is attributed to lower V/III ratio and hydrogen passivation, as well as, lower growth temperatures for the carbon doped InGaAs samples.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122418292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773719
T. Akeyoshi, H. Matsuzaki, T. Itoh, T. Waho, J. Osaka, M. Yamamoto
Ultrahigh-speed circuit applications of resonant-tunneling diodes (RTDs) have been developed. The key points are the utilization of the edge-triggered and latching properties arising from the negative differential resistance of the RTD, and the combination of RTDs and high electron mobility transistors (HEMTs). High-speed and low power operation of various flip-flop (FF) circuits monolithically integrating InP-based RTDs and HEMTs have been demonstrated at room temperature, including a delayed flip-flop operation at 35 Gbit/s. By extending the concept of electronic-input circuits to the optical-input circuit, an ultrahigh-speed optoelectronic circuit integrating RTDs and a photodiode has been developed. Using this optoelectronic circuit, we have succeeded in demultiplexing a 80 Gbit/s optical signal into a 40 Gbit/s electrical signal. These results show the potentiality of RTD-based circuits for ultrahigh-speed communications and signal processing circuits.
{"title":"Applications of resonant-tunneling diodes to high-speed digital ICs","authors":"T. Akeyoshi, H. Matsuzaki, T. Itoh, T. Waho, J. Osaka, M. Yamamoto","doi":"10.1109/ICIPRM.1999.773719","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773719","url":null,"abstract":"Ultrahigh-speed circuit applications of resonant-tunneling diodes (RTDs) have been developed. The key points are the utilization of the edge-triggered and latching properties arising from the negative differential resistance of the RTD, and the combination of RTDs and high electron mobility transistors (HEMTs). High-speed and low power operation of various flip-flop (FF) circuits monolithically integrating InP-based RTDs and HEMTs have been demonstrated at room temperature, including a delayed flip-flop operation at 35 Gbit/s. By extending the concept of electronic-input circuits to the optical-input circuit, an ultrahigh-speed optoelectronic circuit integrating RTDs and a photodiode has been developed. Using this optoelectronic circuit, we have succeeded in demultiplexing a 80 Gbit/s optical signal into a 40 Gbit/s electrical signal. These results show the potentiality of RTD-based circuits for ultrahigh-speed communications and signal processing circuits.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131400962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773734
P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F. Tegude
The liquid alternative group-V precursors TBAs/TBP and CBr/sub 4//DitBuSi as group-IV dopant sources are used to grow GaAs- and InP-based HBT layer stacks. The LP-MOVPE growth of III-V semiconductors using all-liquid sources exhibit a reduced hazard potential and allow a reduced growth temperature which fits to the needs of carbon doping in HBT layer stacks. State-of-the-art InGaP/GaAs HBTs are grown at constant growth temperature (T/sub gt/=60/spl deg/C) and nearly constant V/III-ratio (10
{"title":"LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources","authors":"P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F. Tegude","doi":"10.1109/ICIPRM.1999.773734","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773734","url":null,"abstract":"The liquid alternative group-V precursors TBAs/TBP and CBr/sub 4//DitBuSi as group-IV dopant sources are used to grow GaAs- and InP-based HBT layer stacks. The LP-MOVPE growth of III-V semiconductors using all-liquid sources exhibit a reduced hazard potential and allow a reduced growth temperature which fits to the needs of carbon doping in HBT layer stacks. State-of-the-art InGaP/GaAs HBTs are grown at constant growth temperature (T/sub gt/=60/spl deg/C) and nearly constant V/III-ratio (10<V/III<15) enabling a simplified MOVPE process control. The process control for InGaAs/InP-HBTs is also simplified compared to the use of standard precursors. The InP-HBT structures are grown in between 500/spl deg/C<T/sub pr/<600/spl deg/C temperature and 5<V/III<30 V/III-ratio range.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132938378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773771
B. Koley, F. Johnson, S. Saini, M. Dagenais
We have demonstrated a method of efficient wet oxidation for use in device fabrication using material system lattice-matched to indium phosphide. It was found that the oxidation of a strain compensated InAs/AlAs super-lattice grown on InP proceeded much faster than lattice matched InAlAs. This method has been used for current confinement in InP based edge emitting stripe lasers. The same wet oxidation process is also well suited for long wavelength VCSEL application.
{"title":"A method of incorporating wet-oxidized III-V semiconductor layers into indium phosphide based lasers and amplifiers","authors":"B. Koley, F. Johnson, S. Saini, M. Dagenais","doi":"10.1109/ICIPRM.1999.773771","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773771","url":null,"abstract":"We have demonstrated a method of efficient wet oxidation for use in device fabrication using material system lattice-matched to indium phosphide. It was found that the oxidation of a strain compensated InAs/AlAs super-lattice grown on InP proceeded much faster than lattice matched InAlAs. This method has been used for current confinement in InP based edge emitting stripe lasers. The same wet oxidation process is also well suited for long wavelength VCSEL application.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132197462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773687
K. A. Black, P. Abraham, A. Keating, Y. Chiu, E. Hu, J. Bowers
The need for low cost, high speed telecommunication sources demands the maturation of long wavelength vertical cavity lasers (VCLs). Both long haul fiber optic systems and gigabit ethernet links are potential markets for 1.3 and 1.55 micron VCLs. This past year has seen much progress to this end, but the emerging technology has yet to be determined. This paper overviews critical issues in long wavelength VCL design, and discusses the most recent technological advances in the field.
{"title":"Long wavelength vertical cavity lasers","authors":"K. A. Black, P. Abraham, A. Keating, Y. Chiu, E. Hu, J. Bowers","doi":"10.1109/ICIPRM.1999.773687","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773687","url":null,"abstract":"The need for low cost, high speed telecommunication sources demands the maturation of long wavelength vertical cavity lasers (VCLs). Both long haul fiber optic systems and gigabit ethernet links are potential markets for 1.3 and 1.55 micron VCLs. This past year has seen much progress to this end, but the emerging technology has yet to be determined. This paper overviews critical issues in long wavelength VCL design, and discusses the most recent technological advances in the field.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115185946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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