Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773646
F. Chien, Y. Chan
InP-based transimpedance amplifiers with two different active feedback loop designs, i.e. a common-gate FET (CG-FET) feedback and a gate-source connected FET (GS-FET) feedback, have been fabricated, characterized, and compared with each other. Owing to a better linearity of a feedback resistance in GS-FETs, amplifiers with this feedback design exhibit a large/sup /spl Delta/Vout/ at a small input current. Furthermore, the operational bandwidth of GS-FET feedback amplifier is also improved by eliminating the associated parasitic effect.
{"title":"Gain linearity and bandwidth improvement of InP-based transimpedance amplifiers by feedback loop designs","authors":"F. Chien, Y. Chan","doi":"10.1109/ICIPRM.1999.773646","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773646","url":null,"abstract":"InP-based transimpedance amplifiers with two different active feedback loop designs, i.e. a common-gate FET (CG-FET) feedback and a gate-source connected FET (GS-FET) feedback, have been fabricated, characterized, and compared with each other. Owing to a better linearity of a feedback resistance in GS-FETs, amplifiers with this feedback design exhibit a large/sup /spl Delta/Vout/ at a small input current. Furthermore, the operational bandwidth of GS-FET feedback amplifier is also improved by eliminating the associated parasitic effect.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117214370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773688
A. Dentai, C. R. Giles, E. Burrows
A high-voltage back-illuminated InGaAs photogenerator capable of producing an open-circuit voltage of 4.3 V with 5 /spl mu/W illumination at 1554 nm and 10.3 V with 500 /spl mu/W has been successfully fabricated. Factors contributing to the photogenerator's effectiveness were the large number of diode elements, N=30, a high short-circuit responsivity, r=0.025 A/W, and a low saturation current, I/sub s/=3.95 nA. As a demonstration, the photogenerator was connected to a MEMS optical shutter to build a novel self-powered optical power limiter that might be used to implement autonomous signal power control in optical communication networks. It is expected that the high voltage generated by this device can facilitate the design of a large variety of useful optically powered long-wavelength lightwave circuits.
{"title":"A long-wavelength 10 V optical-to-electrical InGaAs photogenerator","authors":"A. Dentai, C. R. Giles, E. Burrows","doi":"10.1109/ICIPRM.1999.773688","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773688","url":null,"abstract":"A high-voltage back-illuminated InGaAs photogenerator capable of producing an open-circuit voltage of 4.3 V with 5 /spl mu/W illumination at 1554 nm and 10.3 V with 500 /spl mu/W has been successfully fabricated. Factors contributing to the photogenerator's effectiveness were the large number of diode elements, N=30, a high short-circuit responsivity, r=0.025 A/W, and a low saturation current, I/sub s/=3.95 nA. As a demonstration, the photogenerator was connected to a MEMS optical shutter to build a novel self-powered optical power limiter that might be used to implement autonomous signal power control in optical communication networks. It is expected that the high voltage generated by this device can facilitate the design of a large variety of useful optically powered long-wavelength lightwave circuits.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132887359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773735
M. le Pallec, R. Bauknecht, M. Bitter, H. Melchior
A new technology for submicron InP HBT-based integrated circuit fabrication has been investigated. The new concept takes advantage of the crystal plane dependency of InP and InGaAs wet chemical etching profiles combined with an optimized planarization technique. High-speed transistors with a simplified processing in a reduced fabrication time are obtained for the InP-HBT technology.
{"title":"A new concept for InP-HBT fabrication process","authors":"M. le Pallec, R. Bauknecht, M. Bitter, H. Melchior","doi":"10.1109/ICIPRM.1999.773735","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773735","url":null,"abstract":"A new technology for submicron InP HBT-based integrated circuit fabrication has been investigated. The new concept takes advantage of the crystal plane dependency of InP and InGaAs wet chemical etching profiles combined with an optimized planarization technique. High-speed transistors with a simplified processing in a reduced fabrication time are obtained for the InP-HBT technology.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"60 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131878806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773769
M. Nawaz, S. Persson, H. Zirath, E. Choumas, A. Mellberg
A novel, fast and reliable process for making T-shaped gates has been developed. It uses two PMMA layers and one PMGI resist layer which have completely selective developers that result in a large process window. Using this process scheme, gate lengths from 60 to 200 nm have easily been made in the same process step. The processed InP-HEMTs show excellent dc and rf-performance. The process has a good control of the gate lengths and give a high yield, and is therefore suitable for mass production of HEMTs and MMICs.
{"title":"A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 /spl mu/m","authors":"M. Nawaz, S. Persson, H. Zirath, E. Choumas, A. Mellberg","doi":"10.1109/ICIPRM.1999.773769","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773769","url":null,"abstract":"A novel, fast and reliable process for making T-shaped gates has been developed. It uses two PMMA layers and one PMGI resist layer which have completely selective developers that result in a large process window. Using this process scheme, gate lengths from 60 to 200 nm have easily been made in the same process step. The processed InP-HEMTs show excellent dc and rf-performance. The process has a good control of the gate lengths and give a high yield, and is therefore suitable for mass production of HEMTs and MMICs.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134049216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773757
A. Forchel, M. Bayer, J. Reithmaier, T. Reinecke
We review the status of current realizations of photonic band gap systems for the optical wavelength range. Furthermore results of an approach developed by us based on the controlled combination of elementary cells with 3D photonic confinement (photonic dots) will be presented. We have investigated size confinement and interaction effects of optical modes in InGaAs/(Al)GaAs microcavities with dimensional optical confinement (photonic dots).
{"title":"From photonic dots to photonic crystals-Status and potential of semiconductor systems with taylored photonic states","authors":"A. Forchel, M. Bayer, J. Reithmaier, T. Reinecke","doi":"10.1109/ICIPRM.1999.773757","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773757","url":null,"abstract":"We review the status of current realizations of photonic band gap systems for the optical wavelength range. Furthermore results of an approach developed by us based on the controlled combination of elementary cells with 3D photonic confinement (photonic dots) will be presented. We have investigated size confinement and interaction effects of optical modes in InGaAs/(Al)GaAs microcavities with dimensional optical confinement (photonic dots).","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131834189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773707
L. Wernersson, L. Jarlskog, A. Lofgren, N. Nilsson, L. Samuelson, W. Seifert, M. Suhara
Features of tungsten have been embedded in InP, with the aim of forming contacts to buried InP-based layers. The conditions for overgrowing W are investigated for various orientations using a ring-structure. The highest lateral growth rate is observed for angles of 30/spl deg/ and 60/spl deg/ from the [110]-direction and wires oriented in these directions may be completely overgrown without the formation of voids above the metal. A specific contact resistance of 4 10/sup -5/ 1/2 cm/sup 2/ has been measured between buried contacts and the n-type InP. Finally, we have studied the dependence of the intrinsic metal resistance on the overgrowth process. The data show that the metal resistance is reduced and values of about 30 1/2 /Sq for 30-nm-thick features are obtained.
{"title":"Contacting of buried InP-based layers by epitaxial overgrowth over patterned tungsten features","authors":"L. Wernersson, L. Jarlskog, A. Lofgren, N. Nilsson, L. Samuelson, W. Seifert, M. Suhara","doi":"10.1109/ICIPRM.1999.773707","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773707","url":null,"abstract":"Features of tungsten have been embedded in InP, with the aim of forming contacts to buried InP-based layers. The conditions for overgrowing W are investigated for various orientations using a ring-structure. The highest lateral growth rate is observed for angles of 30/spl deg/ and 60/spl deg/ from the [110]-direction and wires oriented in these directions may be completely overgrown without the formation of voids above the metal. A specific contact resistance of 4 10/sup -5/ 1/2 cm/sup 2/ has been measured between buried contacts and the n-type InP. Finally, we have studied the dependence of the intrinsic metal resistance on the overgrowth process. The data show that the metal resistance is reduced and values of about 30 1/2 /Sq for 30-nm-thick features are obtained.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114081244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773639
E. H. Bottcher, H. Pfitzenmaier, E. Droge, S. Kollakowski, A. Strittmatter, D. Bimberg, R. Steingruber
A considerable improvement of bandwidth and efficiency of monolithically integrated distributed InGaAs MSM photodetectors is reported. From a thorough modeling, design criteria for the structural parameters of the optical waveguide and absorber as well as the electrical transmission line are derived which permit the optimization of the quantum efficiency for ultrawideband operation (100-200 GHz). Our experimental results are in very good agreement with the model. Distributed detectors incorporating a ridge waveguide structure embedded in regrown InP are additionally demonstrated to significantly reduce the optical loss of previously reported devices.
{"title":"Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation","authors":"E. H. Bottcher, H. Pfitzenmaier, E. Droge, S. Kollakowski, A. Strittmatter, D. Bimberg, R. Steingruber","doi":"10.1109/ICIPRM.1999.773639","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773639","url":null,"abstract":"A considerable improvement of bandwidth and efficiency of monolithically integrated distributed InGaAs MSM photodetectors is reported. From a thorough modeling, design criteria for the structural parameters of the optical waveguide and absorber as well as the electrical transmission line are derived which permit the optimization of the quantum efficiency for ultrawideband operation (100-200 GHz). Our experimental results are in very good agreement with the model. Distributed detectors incorporating a ridge waveguide structure embedded in regrown InP are additionally demonstrated to significantly reduce the optical loss of previously reported devices.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121380486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773628
V. Voiriot, B. Thedrez, J. Gentner, J. Rainsant, V. Colson, C. Duchemin, F. Gaborit, S. Hubert, J. Lafragette, A. Pinquier, L. Roux, B. Fernier
We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.
{"title":"1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process","authors":"V. Voiriot, B. Thedrez, J. Gentner, J. Rainsant, V. Colson, C. Duchemin, F. Gaborit, S. Hubert, J. Lafragette, A. Pinquier, L. Roux, B. Fernier","doi":"10.1109/ICIPRM.1999.773628","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773628","url":null,"abstract":"We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121418387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773664
T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto, K. Furuya
We propose a buried metal heterojunction bipolar transistor (BM-HBT), in which buried metal in the collector layer could reduce the total base-collector capacitance. To show the possibility of making a BM-HBT, we fabricated an InP-based HBT with buried tungsten mesh replacing the subcollector layer, where tungsten mesh works as a Schottky collector electrode. A flat heterostructure on the InP collector layer of the buried tungsten mesh was confirmed by a cross-sectional SEM view. A DC current gain of 12 was measured from the common-emitter collector I-V characteristics.
{"title":"Proposal of buried metal heterojunction bipolar transistor and fabrication of HBT with buried tungsten","authors":"T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto, K. Furuya","doi":"10.1109/ICIPRM.1999.773664","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773664","url":null,"abstract":"We propose a buried metal heterojunction bipolar transistor (BM-HBT), in which buried metal in the collector layer could reduce the total base-collector capacitance. To show the possibility of making a BM-HBT, we fabricated an InP-based HBT with buried tungsten mesh replacing the subcollector layer, where tungsten mesh works as a Schottky collector electrode. A flat heterostructure on the InP collector layer of the buried tungsten mesh was confirmed by a cross-sectional SEM view. A DC current gain of 12 was measured from the common-emitter collector I-V characteristics.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128779472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773698
H. Maher, J. Decobert, A. Falcou, G. Post, A. Scavennec
A triple channel (InGaAs-AlGaInAs-InP) HEMT structure has been investigated for high breakdown voltage applications. This structure takes advantage simultaneously of both the high electron mobility at low field in the InGaAs channel and the low impact ionization coefficient in the InP channel. The transistor actually shows good dynamic performances and high breakdown voltage: for a 0.8 /spl mu/m gate length we obtained: gm=240 mS/mm, Idss=225 mA/mm, Vbrd=6.5 V, f/sub t/=35 GHz, f/sub max/>90 GHz. A specific feature of this HEMT structure is its low output conductance (gm/gd=40 at both low and high frequency) attributed in particular to the fact that the barrier layer is undoped, with the /spl delta/-doping sitting in the middle of the channel. For the 0.8 /spl mu/m gate length devices investigated, the output conductance is much lower than for single or dual channel HEMTs fabricated with similar geometry. This feature is maintained for shorter gate length (at Lg=0.2 /spl mu/m). In this paper an analysis of this output conductance is presented, illustrating the importance of impact ionization and residual traps.
{"title":"A 3-channel InP-HEMT with low output conductance","authors":"H. Maher, J. Decobert, A. Falcou, G. Post, A. Scavennec","doi":"10.1109/ICIPRM.1999.773698","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773698","url":null,"abstract":"A triple channel (InGaAs-AlGaInAs-InP) HEMT structure has been investigated for high breakdown voltage applications. This structure takes advantage simultaneously of both the high electron mobility at low field in the InGaAs channel and the low impact ionization coefficient in the InP channel. The transistor actually shows good dynamic performances and high breakdown voltage: for a 0.8 /spl mu/m gate length we obtained: gm=240 mS/mm, Idss=225 mA/mm, Vbrd=6.5 V, f/sub t/=35 GHz, f/sub max/>90 GHz. A specific feature of this HEMT structure is its low output conductance (gm/gd=40 at both low and high frequency) attributed in particular to the fact that the barrier layer is undoped, with the /spl delta/-doping sitting in the middle of the channel. For the 0.8 /spl mu/m gate length devices investigated, the output conductance is much lower than for single or dual channel HEMTs fabricated with similar geometry. This feature is maintained for shorter gate length (at Lg=0.2 /spl mu/m). In this paper an analysis of this output conductance is presented, illustrating the importance of impact ionization and residual traps.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128787414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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