Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773725
T. Morf, D. Huber, A. Huber, V. Schwarz, H. Jackel
In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT amplifier at 60 GHz could be found in literature.
{"title":"50 to 70 GHz InP/InGaAs HBT amplifier with 20 dB gain","authors":"T. Morf, D. Huber, A. Huber, V. Schwarz, H. Jackel","doi":"10.1109/ICIPRM.1999.773725","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773725","url":null,"abstract":"In this paper the design and a complete characterization of an InP/InGaAs single heterojunction bipolar (SHBT) mm-wave amplifier is described. The circuit is designed for the 60 GHz band allocated for wireless LAN and mobile communications. The amplifier achieves a gain of 20 dB from 50 GHz to 70 GHz. Beside S-parameter noise and gain compression measurements are presented. No comparable HBT amplifier at 60 GHz could be found in literature.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127057576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773747
C. Carlstrom, S. Anand, E. Niemi, G. Landgren
The influence of the surface morphology on island formation by As/P exchange reaction on the InP surfaces was investigated. It was demonstrated that island formation is extremely sensitive to the physical nature of the surface. Variation in the surface rms. roughness, caused by controlled ion beam etching (shallow) under different conditions, was shown to drastically affect the island size distribution. Further, the determined total island volume increased with the surface roughness, which is consistent with increased surface area available for As/P exchange reaction. Modification of surface morphology is suggested as an alternative route to vary island size distribution.
{"title":"Correlation between morphology and island formation on InP surfaces","authors":"C. Carlstrom, S. Anand, E. Niemi, G. Landgren","doi":"10.1109/ICIPRM.1999.773747","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773747","url":null,"abstract":"The influence of the surface morphology on island formation by As/P exchange reaction on the InP surfaces was investigated. It was demonstrated that island formation is extremely sensitive to the physical nature of the surface. Variation in the surface rms. roughness, caused by controlled ion beam etching (shallow) under different conditions, was shown to drastically affect the island size distribution. Further, the determined total island volume increased with the surface roughness, which is consistent with increased surface area available for As/P exchange reaction. Modification of surface morphology is suggested as an alternative route to vary island size distribution.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125918737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773705
S. Hinooda, N. Bertru, S. Fréchengues, B. Lambert, S. Loualiche, M. Paillard, X. Marie, T. Amand
Carrier capture of InAs quantum dots structure on InP (311)B substrate has been studied by optical measurements. Photoluminescence measurements shows a clear decrease of the decay time of the two dimensional confining layer at high temperature under lower excitation. A strong decrease of the decay time has also been observed under high incident excitation even at low temperature. These effects are explained, by a very simple model, as a consequence of carrier capture into quantum dots assisted by a thermal activation of carriers and energy relaxation through the Auger process.
{"title":"Carrier capture in self-assembled InAs/InP quantum dots","authors":"S. Hinooda, N. Bertru, S. Fréchengues, B. Lambert, S. Loualiche, M. Paillard, X. Marie, T. Amand","doi":"10.1109/ICIPRM.1999.773705","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773705","url":null,"abstract":"Carrier capture of InAs quantum dots structure on InP (311)B substrate has been studied by optical measurements. Photoluminescence measurements shows a clear decrease of the decay time of the two dimensional confining layer at high temperature under lower excitation. A strong decrease of the decay time has also been observed under high incident excitation even at low temperature. These effects are explained, by a very simple model, as a consequence of carrier capture into quantum dots assisted by a thermal activation of carriers and energy relaxation through the Auger process.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121585566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773756
J. Benchimol, J. Mba, A.R. Duchenois, P. Berdaguer, B. Sermage, G. Le Roux, S. Blayac, M. Riet, J. Thuret, C. Gonzalez, P. Andre
InGaAs/lnP heterojunction bipolar transistors (HBT) with a carbon doped base are shown to have lower gain than those with Be doped base, partly because of lower electron lifetime. In order to keep advantage of the low diffusivity of carbon dopant, a composition graduality is introduced in the base, which significantly improves the current gain of HBT's. This graduality also leads to some advantageous side effects such as higher doping levels, low base sheet resistance and constant gain over a four-decade current range, without degrading the lifetime of the device. Such structures were processed as single HBT devices with high frequency performances (f/sub t/=168 GHz), digital circuits (2:1 MUX) operating at 46 Gbit/s and phototransistors with 35 dB optical gain and 62 GHz optical cut-off frequency.
{"title":"Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base","authors":"J. Benchimol, J. Mba, A.R. Duchenois, P. Berdaguer, B. Sermage, G. Le Roux, S. Blayac, M. Riet, J. Thuret, C. Gonzalez, P. Andre","doi":"10.1109/ICIPRM.1999.773756","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773756","url":null,"abstract":"InGaAs/lnP heterojunction bipolar transistors (HBT) with a carbon doped base are shown to have lower gain than those with Be doped base, partly because of lower electron lifetime. In order to keep advantage of the low diffusivity of carbon dopant, a composition graduality is introduced in the base, which significantly improves the current gain of HBT's. This graduality also leads to some advantageous side effects such as higher doping levels, low base sheet resistance and constant gain over a four-decade current range, without degrading the lifetime of the device. Such structures were processed as single HBT devices with high frequency performances (f/sub t/=168 GHz), digital circuits (2:1 MUX) operating at 46 Gbit/s and phototransistors with 35 dB optical gain and 62 GHz optical cut-off frequency.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"810 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773774
D. Jahan, P. Legay, F. Alexandre
Monolithic device integration is more and more essential for the realisation of micro and optoelectronic circuits, which can fulfil complex functions with higher performances. The most prevalent approach in the fabrication of photonic integrated circuits (PICs) is the butt-coupling. This can be done in one step by Selective Area Growth (SAG) carried out by Metalorganic Vapour Phase Epitaxy (MOVPE) or by localised selective regrowth by Chemical Beam Epitaxy (CBE). The former technique inconvenient is that the structures of the devices cannot be quite different, especially, if one of them should be doped, the others will be doped as well. The latter method needs one epitaxial step for each integrated structure and requires several etching steps, which can deteriorate the performances of the regrown devices. This study proposes a new procedure to integrate several devices without any etching step.
{"title":"Photonic integration technology without semiconductor etching","authors":"D. Jahan, P. Legay, F. Alexandre","doi":"10.1109/ICIPRM.1999.773774","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773774","url":null,"abstract":"Monolithic device integration is more and more essential for the realisation of micro and optoelectronic circuits, which can fulfil complex functions with higher performances. The most prevalent approach in the fabrication of photonic integrated circuits (PICs) is the butt-coupling. This can be done in one step by Selective Area Growth (SAG) carried out by Metalorganic Vapour Phase Epitaxy (MOVPE) or by localised selective regrowth by Chemical Beam Epitaxy (CBE). The former technique inconvenient is that the structures of the devices cannot be quite different, especially, if one of them should be doped, the others will be doped as well. The latter method needs one epitaxial step for each integrated structure and requires several etching steps, which can deteriorate the performances of the regrown devices. This study proposes a new procedure to integrate several devices without any etching step.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123270223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773707
L. Wernersson, L. Jarlskog, A. Lofgren, N. Nilsson, L. Samuelson, W. Seifert, M. Suhara
Features of tungsten have been embedded in InP, with the aim of forming contacts to buried InP-based layers. The conditions for overgrowing W are investigated for various orientations using a ring-structure. The highest lateral growth rate is observed for angles of 30/spl deg/ and 60/spl deg/ from the [110]-direction and wires oriented in these directions may be completely overgrown without the formation of voids above the metal. A specific contact resistance of 4 10/sup -5/ 1/2 cm/sup 2/ has been measured between buried contacts and the n-type InP. Finally, we have studied the dependence of the intrinsic metal resistance on the overgrowth process. The data show that the metal resistance is reduced and values of about 30 1/2 /Sq for 30-nm-thick features are obtained.
{"title":"Contacting of buried InP-based layers by epitaxial overgrowth over patterned tungsten features","authors":"L. Wernersson, L. Jarlskog, A. Lofgren, N. Nilsson, L. Samuelson, W. Seifert, M. Suhara","doi":"10.1109/ICIPRM.1999.773707","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773707","url":null,"abstract":"Features of tungsten have been embedded in InP, with the aim of forming contacts to buried InP-based layers. The conditions for overgrowing W are investigated for various orientations using a ring-structure. The highest lateral growth rate is observed for angles of 30/spl deg/ and 60/spl deg/ from the [110]-direction and wires oriented in these directions may be completely overgrown without the formation of voids above the metal. A specific contact resistance of 4 10/sup -5/ 1/2 cm/sup 2/ has been measured between buried contacts and the n-type InP. Finally, we have studied the dependence of the intrinsic metal resistance on the overgrowth process. The data show that the metal resistance is reduced and values of about 30 1/2 /Sq for 30-nm-thick features are obtained.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114081244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773639
E. H. Bottcher, H. Pfitzenmaier, E. Droge, S. Kollakowski, A. Strittmatter, D. Bimberg, R. Steingruber
A considerable improvement of bandwidth and efficiency of monolithically integrated distributed InGaAs MSM photodetectors is reported. From a thorough modeling, design criteria for the structural parameters of the optical waveguide and absorber as well as the electrical transmission line are derived which permit the optimization of the quantum efficiency for ultrawideband operation (100-200 GHz). Our experimental results are in very good agreement with the model. Distributed detectors incorporating a ridge waveguide structure embedded in regrown InP are additionally demonstrated to significantly reduce the optical loss of previously reported devices.
{"title":"Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation","authors":"E. H. Bottcher, H. Pfitzenmaier, E. Droge, S. Kollakowski, A. Strittmatter, D. Bimberg, R. Steingruber","doi":"10.1109/ICIPRM.1999.773639","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773639","url":null,"abstract":"A considerable improvement of bandwidth and efficiency of monolithically integrated distributed InGaAs MSM photodetectors is reported. From a thorough modeling, design criteria for the structural parameters of the optical waveguide and absorber as well as the electrical transmission line are derived which permit the optimization of the quantum efficiency for ultrawideband operation (100-200 GHz). Our experimental results are in very good agreement with the model. Distributed detectors incorporating a ridge waveguide structure embedded in regrown InP are additionally demonstrated to significantly reduce the optical loss of previously reported devices.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121380486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773628
V. Voiriot, B. Thedrez, J. Gentner, J. Rainsant, V. Colson, C. Duchemin, F. Gaborit, S. Hubert, J. Lafragette, A. Pinquier, L. Roux, B. Fernier
We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.
{"title":"1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process","authors":"V. Voiriot, B. Thedrez, J. Gentner, J. Rainsant, V. Colson, C. Duchemin, F. Gaborit, S. Hubert, J. Lafragette, A. Pinquier, L. Roux, B. Fernier","doi":"10.1109/ICIPRM.1999.773628","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773628","url":null,"abstract":"We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to define the tapered section of the spot size converter integrated in the device. Thanks to suitable UV-250 contact lithography process, sub-micron patterns, 2-inch homogeneity, and run to run reproducibility is simultaneously achieved. 15/spl deg//spl times/15/spl deg/ front facet divergence is obtained allowing 3.6 dB coupling loss to an AR coated end-cleaved standard optical fibre. Threshold current as low as 11 mA and external efficiency up to 0.42 W/A at 25/spl deg/C have been measured on 500 /spl mu/m long lasers.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121418387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773664
T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto, K. Furuya
We propose a buried metal heterojunction bipolar transistor (BM-HBT), in which buried metal in the collector layer could reduce the total base-collector capacitance. To show the possibility of making a BM-HBT, we fabricated an InP-based HBT with buried tungsten mesh replacing the subcollector layer, where tungsten mesh works as a Schottky collector electrode. A flat heterostructure on the InP collector layer of the buried tungsten mesh was confirmed by a cross-sectional SEM view. A DC current gain of 12 was measured from the common-emitter collector I-V characteristics.
{"title":"Proposal of buried metal heterojunction bipolar transistor and fabrication of HBT with buried tungsten","authors":"T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto, K. Furuya","doi":"10.1109/ICIPRM.1999.773664","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773664","url":null,"abstract":"We propose a buried metal heterojunction bipolar transistor (BM-HBT), in which buried metal in the collector layer could reduce the total base-collector capacitance. To show the possibility of making a BM-HBT, we fabricated an InP-based HBT with buried tungsten mesh replacing the subcollector layer, where tungsten mesh works as a Schottky collector electrode. A flat heterostructure on the InP collector layer of the buried tungsten mesh was confirmed by a cross-sectional SEM view. A DC current gain of 12 was measured from the common-emitter collector I-V characteristics.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128779472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773698
H. Maher, J. Decobert, A. Falcou, G. Post, A. Scavennec
A triple channel (InGaAs-AlGaInAs-InP) HEMT structure has been investigated for high breakdown voltage applications. This structure takes advantage simultaneously of both the high electron mobility at low field in the InGaAs channel and the low impact ionization coefficient in the InP channel. The transistor actually shows good dynamic performances and high breakdown voltage: for a 0.8 /spl mu/m gate length we obtained: gm=240 mS/mm, Idss=225 mA/mm, Vbrd=6.5 V, f/sub t/=35 GHz, f/sub max/>90 GHz. A specific feature of this HEMT structure is its low output conductance (gm/gd=40 at both low and high frequency) attributed in particular to the fact that the barrier layer is undoped, with the /spl delta/-doping sitting in the middle of the channel. For the 0.8 /spl mu/m gate length devices investigated, the output conductance is much lower than for single or dual channel HEMTs fabricated with similar geometry. This feature is maintained for shorter gate length (at Lg=0.2 /spl mu/m). In this paper an analysis of this output conductance is presented, illustrating the importance of impact ionization and residual traps.
{"title":"A 3-channel InP-HEMT with low output conductance","authors":"H. Maher, J. Decobert, A. Falcou, G. Post, A. Scavennec","doi":"10.1109/ICIPRM.1999.773698","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773698","url":null,"abstract":"A triple channel (InGaAs-AlGaInAs-InP) HEMT structure has been investigated for high breakdown voltage applications. This structure takes advantage simultaneously of both the high electron mobility at low field in the InGaAs channel and the low impact ionization coefficient in the InP channel. The transistor actually shows good dynamic performances and high breakdown voltage: for a 0.8 /spl mu/m gate length we obtained: gm=240 mS/mm, Idss=225 mA/mm, Vbrd=6.5 V, f/sub t/=35 GHz, f/sub max/>90 GHz. A specific feature of this HEMT structure is its low output conductance (gm/gd=40 at both low and high frequency) attributed in particular to the fact that the barrier layer is undoped, with the /spl delta/-doping sitting in the middle of the channel. For the 0.8 /spl mu/m gate length devices investigated, the output conductance is much lower than for single or dual channel HEMTs fabricated with similar geometry. This feature is maintained for shorter gate length (at Lg=0.2 /spl mu/m). In this paper an analysis of this output conductance is presented, illustrating the importance of impact ionization and residual traps.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128787414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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