Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773660
D. Bliss, J. Zhao, G. Bryant, R. Lancto, M. Dudley, V. Prasad
The mechanism of dislocation generation and propagation in InP bulk crystals has been studied by controlling the shape and the growth rate of the neck. The effectiveness of deliberate necking in MLEC crystal growth of sulfur-doped InP crystals has been studied by X-ray white beam synchrotron radiation topography. For seeds oriented in the <100> direction, the twelve-fold slip systems are arrayed at 35/spl deg/ from the seed axis. Dislocations are observed in topographic views of the [110] cross-section of these crystals. The high density of dislocations generated at the seed-crystal interface is seen to propagate outward toward the periphery. Also seen are the striations associated with the sulfur distribution. These striations delineate the solid-melt interface as thermal excursions cause instantaneous changes in growth rate. For this study, the pulling rate was deliberately varied during growth, to determine the relationship between interface shape and dislocation density. The results show the necking process is of crucial importance to promote the growth of highly perfect InP single crystals.
{"title":"Dislocation generation and propagation near the seed-crystal interface during MLEC crystal growth of sulfur-doped InP","authors":"D. Bliss, J. Zhao, G. Bryant, R. Lancto, M. Dudley, V. Prasad","doi":"10.1109/ICIPRM.1999.773660","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773660","url":null,"abstract":"The mechanism of dislocation generation and propagation in InP bulk crystals has been studied by controlling the shape and the growth rate of the neck. The effectiveness of deliberate necking in MLEC crystal growth of sulfur-doped InP crystals has been studied by X-ray white beam synchrotron radiation topography. For seeds oriented in the <100> direction, the twelve-fold slip systems are arrayed at 35/spl deg/ from the seed axis. Dislocations are observed in topographic views of the [110] cross-section of these crystals. The high density of dislocations generated at the seed-crystal interface is seen to propagate outward toward the periphery. Also seen are the striations associated with the sulfur distribution. These striations delineate the solid-melt interface as thermal excursions cause instantaneous changes in growth rate. For this study, the pulling rate was deliberately varied during growth, to determine the relationship between interface shape and dislocation density. The results show the necking process is of crucial importance to promote the growth of highly perfect InP single crystals.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128971997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773656
T. Schmitt, M. Deufel, G. Strauch, D. Schmitz, M. Heuken, H. Juergensen
Results of the AIX 2600G3 planetary reactor(R) in the 35/spl times/2 inch configuration with Gas Foil Rotation(R) will be shown. Measurements including all seven 2 inch wafers of one satellite will be presented. As a further detailed study and tuning of the AIXTRON Planetary Reactor(R) system AIX 2600G3 in the 35 times 2 inch configuration, we investigated the depletion behaviour along the reactor radius using rotating, as well as intentionally fixed satellites. Very often doped DBR-structures are used as a mirror below the active region of the AlGaInP LED to increase the light output. So AlAs/GaAs distributed Bragg reflectors (DBR) were chosen to optimise the thickness homogeneity and gallium efficiency across the five 6 inch satellites in dependence of the total flow. Further on, we examined the influence of the total reactor pressure on the semiconductor layer composition via X-ray data of AlInP. To check the adjustments of our reactor configuration we chose the critical and very temperature sensitive material system AlGaInP, as well as AlGaInP-MQW structures.
{"title":"35/spl times/2 inch wafer MOVPE system for electronic and optoelectronic devices","authors":"T. Schmitt, M. Deufel, G. Strauch, D. Schmitz, M. Heuken, H. Juergensen","doi":"10.1109/ICIPRM.1999.773656","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773656","url":null,"abstract":"Results of the AIX 2600G3 planetary reactor(R) in the 35/spl times/2 inch configuration with Gas Foil Rotation(R) will be shown. Measurements including all seven 2 inch wafers of one satellite will be presented. As a further detailed study and tuning of the AIXTRON Planetary Reactor(R) system AIX 2600G3 in the 35 times 2 inch configuration, we investigated the depletion behaviour along the reactor radius using rotating, as well as intentionally fixed satellites. Very often doped DBR-structures are used as a mirror below the active region of the AlGaInP LED to increase the light output. So AlAs/GaAs distributed Bragg reflectors (DBR) were chosen to optimise the thickness homogeneity and gallium efficiency across the five 6 inch satellites in dependence of the total flow. Further on, we examined the influence of the total reactor pressure on the semiconductor layer composition via X-ray data of AlInP. To check the adjustments of our reactor configuration we chose the critical and very temperature sensitive material system AlGaInP, as well as AlGaInP-MQW structures.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117042162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773717
J. C. Dries, M. Gokhale, S. Forrest, G. Olsen
We report an avalanche photodiode structure for use at wavelengths as long as 2.1 /spl mu/m. Light is absorbed in a 100 period structure consisting of In/sub 0.83/Ga/sub 0.17/As quantum wells strain-compensated by In/sub 0.83/Ga/sub 0.17/P barrier layers. Photogenerated electrons are injected into a high electric field In/sub 0.52/Al/sub 0.48/As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of /spl sim/5 nA and responsivities of 45 A/W at a wavelength of 1.93 /spl mu/m are observed.
{"title":"A 2.0 /spl mu/m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells","authors":"J. C. Dries, M. Gokhale, S. Forrest, G. Olsen","doi":"10.1109/ICIPRM.1999.773717","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773717","url":null,"abstract":"We report an avalanche photodiode structure for use at wavelengths as long as 2.1 /spl mu/m. Light is absorbed in a 100 period structure consisting of In/sub 0.83/Ga/sub 0.17/As quantum wells strain-compensated by In/sub 0.83/Ga/sub 0.17/P barrier layers. Photogenerated electrons are injected into a high electric field In/sub 0.52/Al/sub 0.48/As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of /spl sim/5 nA and responsivities of 45 A/W at a wavelength of 1.93 /spl mu/m are observed.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117066128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773744
T. Schrimpf, Dirk Piester, H. Wehmann, P. Bonsch, D. Wullner, A. Schlachetzki, C. Mendorf, H. Lakner
We report on the characterization of InGaAs quantum wells (QWL) and wires (QWR) on V-groove patterned InP substrates. The quality of the QWL on the (100)-surface between the grooves is discussed concerning different sample preparation methods. The material composition and the thickness of these QWL is determined. The geometrical shape of the QWR in the tip of the V-grooves is measured by atomic-force microscopy (AFM) and compared with transmission-electron microscopy (TEM). The dependence of the QWR photoluminescence (PL) on sample temperature is studied.
{"title":"Preparation and characterization of InGaAs quantum wires on V-groove patterned InP","authors":"T. Schrimpf, Dirk Piester, H. Wehmann, P. Bonsch, D. Wullner, A. Schlachetzki, C. Mendorf, H. Lakner","doi":"10.1109/ICIPRM.1999.773744","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773744","url":null,"abstract":"We report on the characterization of InGaAs quantum wells (QWL) and wires (QWR) on V-groove patterned InP substrates. The quality of the QWL on the (100)-surface between the grooves is discussed concerning different sample preparation methods. The material composition and the thickness of these QWL is determined. The geometrical shape of the QWR in the tip of the V-grooves is measured by atomic-force microscopy (AFM) and compared with transmission-electron microscopy (TEM). The dependence of the QWR photoluminescence (PL) on sample temperature is studied.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117279371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773745
K. Tanaka, T. Kurata, N. Kotera
Infrared photocurrent spectra in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiquantum wells were measured at room temperature under an external electric field. The interband photocurrent spectra showed a number of clear steplike structures due to two-dimensional subbands accentuated by free exciton states, in 10-nm-thick InGaAs quantum wells (QWs) separated by 10-nm-thick barriers. Energies of the confined states in QWs near zero field were extrapolated from higher field and shown to be proportional to the squared quantum numbers of heavy hole (HH) subbands and conduction subbands. Contribution of light hole (LH) was discriminate by a separate experiment under a tilted polarized light. The HH-related peaks were most sensitive to the bias field because the quantum confined Stark effect (QCSE) was stronger in HH subbands. Model calculation precisely revealed that an allowed LH transition could change into a forbidden HH transition by an electric field. Nonparabolicity of HH mass normal to the QW plane was surmised small.
在室温外电场下，测量了in /sub 0.53/Ga/sub 0.47/As/ in /sub 0.52/Al/sub 0.48/As多量子阱的红外光电流谱。带间光电流谱显示出许多清晰的阶梯状结构，这是由于被自由激子态强化的二维亚带，在10-nm厚的InGaAs量子阱(QWs)中被10-nm厚的势垒隔开。从高场推断出近零场量子阱中受限态的能量与重空穴子带和传导子带的量子数的平方成正比。在倾斜偏振光下，通过单独实验判别了光孔的贡献。HH相关峰对偏置场最敏感，因为在HH子带中量子受限斯塔克效应(QCSE)更强。模型计算精确地揭示了允许的LH跃迁可以在电场作用下转变为禁止的HH跃迁。推测HH质量法向QW平面的非抛物性较小。
{"title":"Quantum confined Stark effects of heavy hole subbands in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum well structures using photocurrent spectroscopy","authors":"K. Tanaka, T. Kurata, N. Kotera","doi":"10.1109/ICIPRM.1999.773745","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773745","url":null,"abstract":"Infrared photocurrent spectra in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiquantum wells were measured at room temperature under an external electric field. The interband photocurrent spectra showed a number of clear steplike structures due to two-dimensional subbands accentuated by free exciton states, in 10-nm-thick InGaAs quantum wells (QWs) separated by 10-nm-thick barriers. Energies of the confined states in QWs near zero field were extrapolated from higher field and shown to be proportional to the squared quantum numbers of heavy hole (HH) subbands and conduction subbands. Contribution of light hole (LH) was discriminate by a separate experiment under a tilted polarized light. The HH-related peaks were most sensitive to the bias field because the quantum confined Stark effect (QCSE) was stronger in HH subbands. Model calculation precisely revealed that an allowed LH transition could change into a forbidden HH transition by an electric field. Nonparabolicity of HH mass normal to the QW plane was surmised small.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115828579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773694
E. Sano
Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40 Gbit/s operating region. This paper describes a 0.1 /spl mu/m gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40 Gbit/s lightwave communication ICs. This paper also describes the problems in moving toward 100 Gbit/s operation.
{"title":"InP HEMT lightwave communication ICs for 40 Gbit/s and beyond","authors":"E. Sano","doi":"10.1109/ICIPRM.1999.773694","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773694","url":null,"abstract":"Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40 Gbit/s operating region. This paper describes a 0.1 /spl mu/m gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40 Gbit/s lightwave communication ICs. This paper also describes the problems in moving toward 100 Gbit/s operation.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128364354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773648
N. Hoshi, T. Mitsuma, H. Tanaka, Y. Matsushtma
We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.
{"title":"Optical input power tolerance of InGaAsP electroabsorption modulator","authors":"N. Hoshi, T. Mitsuma, H. Tanaka, Y. Matsushtma","doi":"10.1109/ICIPRM.1999.773648","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773648","url":null,"abstract":"We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"734 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116954131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773738
S. Blayac, M. Riet, J. Benchimol, M. Abboun, F. Aniel, P. Berdaguer, A.M. Duchenois, A. Konczykowska, J. Godin
InP/InGaAs DHBT technology for 40 Gb/s ICs is first presented. For these circuit applications, a sufficient breakdown voltage (>5 V), a static gain around 50, cutoff frequencies (f/sub T/) and maximum oscillation frequencies (f/sub max/) greater than 100 GHz are needed. High performance InP/InGaAs DHBT grown by chemical beam epitaxy (CBE) are reported with 125 GHz f/sub T/, 128 GHz f/sub max/ and a gain of 50 at a current density of 1/spl times/10/sup 5/ A/cm/sup 2/. Devices geometry optimisation is performed using a geometric model based on a set of analytical equations. This tool allows not only technological optimisation but also function-adapted individual sizing of the devices in the circuits.
{"title":"InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model","authors":"S. Blayac, M. Riet, J. Benchimol, M. Abboun, F. Aniel, P. Berdaguer, A.M. Duchenois, A. Konczykowska, J. Godin","doi":"10.1109/ICIPRM.1999.773738","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773738","url":null,"abstract":"InP/InGaAs DHBT technology for 40 Gb/s ICs is first presented. For these circuit applications, a sufficient breakdown voltage (>5 V), a static gain around 50, cutoff frequencies (f/sub T/) and maximum oscillation frequencies (f/sub max/) greater than 100 GHz are needed. High performance InP/InGaAs DHBT grown by chemical beam epitaxy (CBE) are reported with 125 GHz f/sub T/, 128 GHz f/sub max/ and a gain of 50 at a current density of 1/spl times/10/sup 5/ A/cm/sup 2/. Devices geometry optimisation is performed using a geometric model based on a set of analytical equations. This tool allows not only technological optimisation but also function-adapted individual sizing of the devices in the circuits.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"2004 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116896782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773713
M. Bitter, R. Bauknecht, W. Hunziker, H. Melchior
A fully packaged 40 Gb/s optical receiver module based on monolithic integration of pin photodiodes and single-heterojunction bipolar transistors (HBT) in the InP/InGaAs material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly open eyes at a data-rate of 40 Gb/s and a wavelength of 1550 nm.
{"title":"Monolithically integrated 40-Gb/s InP/InGaAs PIN/HBT optical receiver module","authors":"M. Bitter, R. Bauknecht, W. Hunziker, H. Melchior","doi":"10.1109/ICIPRM.1999.773713","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773713","url":null,"abstract":"A fully packaged 40 Gb/s optical receiver module based on monolithic integration of pin photodiodes and single-heterojunction bipolar transistors (HBT) in the InP/InGaAs material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly open eyes at a data-rate of 40 Gb/s and a wavelength of 1550 nm.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"153 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114091519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773709
G. Olsen, M. Lange, A. Sugg, M. Ettenberg, J. Sudol, M. J. Cohen, S. Forrest
Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density (<10,000 cm/sup -2/) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a "spin-on" zinc diffusion technique whereby the source of zinc is "spun-on" much like a photoresist.
{"title":"Progress with 100 mm diameter In/sub 0.53/Ga/sub 0.47/As/InP wafer processing","authors":"G. Olsen, M. Lange, A. Sugg, M. Ettenberg, J. Sudol, M. J. Cohen, S. Forrest","doi":"10.1109/ICIPRM.1999.773709","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773709","url":null,"abstract":"Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density (<10,000 cm/sup -2/) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a \"spin-on\" zinc diffusion technique whereby the source of zinc is \"spun-on\" much like a photoresist.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114477774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：