Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773686
T. Takanohashi
Spectral dependence of the photoionization cross sections for iron (Fe) acceptor doped in the liquid-phase-epitaxy-grown InP and In/sub x/Ga/sub 1-x/P (x=0.49) layers is determined by photocapacitance spectroscopy. The deep-level structures and the carrier-emission processes are precisely analyzed. For the crystal-field-split levels of Fe/sup 2+/:/sup 5/E and /sup 5/T/sub 2/, the fundamental transitions of /sup 5/E-/spl Gamma//sub 1/, /spl Gamma//sub 15/-/sup 5/E in InP:Fe, and /spl Gamma//sub 15/-/sup 5/E, /spl Gamma//sub 15/-/sup 5/T/sub 2/ in In/sub x/Ga/sub 1-x/P:Fe are adequately described by the Lucovsky-model calculation. The optical thresholds and the crystal-field-split energies are determined accurately. The small difference between the optical and thermal energies indicates that the Fe acceptor level is perturbed weakly by the lattice vibration in the InP and In/sub x/Ga/sub 1-x/P. Nonexponential photocapacitance transient is observed in the In/sub x/Ga/sub 1-x/P:Fe for the alloying effects.
{"title":"Deep-level optical spectroscopy on iron acceptor doped in InP and In/sub x/Ga/sub 1-x/P","authors":"T. Takanohashi","doi":"10.1109/ICIPRM.1999.773686","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773686","url":null,"abstract":"Spectral dependence of the photoionization cross sections for iron (Fe) acceptor doped in the liquid-phase-epitaxy-grown InP and In/sub x/Ga/sub 1-x/P (x=0.49) layers is determined by photocapacitance spectroscopy. The deep-level structures and the carrier-emission processes are precisely analyzed. For the crystal-field-split levels of Fe/sup 2+/:/sup 5/E and /sup 5/T/sub 2/, the fundamental transitions of /sup 5/E-/spl Gamma//sub 1/, /spl Gamma//sub 15/-/sup 5/E in InP:Fe, and /spl Gamma//sub 15/-/sup 5/E, /spl Gamma//sub 15/-/sup 5/T/sub 2/ in In/sub x/Ga/sub 1-x/P:Fe are adequately described by the Lucovsky-model calculation. The optical thresholds and the crystal-field-split energies are determined accurately. The small difference between the optical and thermal energies indicates that the Fe acceptor level is perturbed weakly by the lattice vibration in the InP and In/sub x/Ga/sub 1-x/P. Nonexponential photocapacitance transient is observed in the In/sub x/Ga/sub 1-x/P:Fe for the alloying effects.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130401971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773758
F. Koyama, S. Sato, T. Miyamoto, K. Iga
The GaInNAs/GaAs system has been attracting much interest for 1.3 /spl mu/m monolithic vertical cavity surface emitting lasers (VCSELs). So far, room temperature operations of 1.3 /spl mu/m GaInNAs/GaAs edge emitting lasers grown by either gas source MBE or MOCVD have been demonstrated. However, the degradation of crystal qualities with increasing the nitrogen composition is a remaining problem. The origin for the deterioration is still unclear. It is essential to find the origin and to improve the quality of GaInNAs for realizing high performance long wavelength GaInNAs lasers. In this work, we present the composition dependence of emission characteristics of highly strained GaInNAs quantum well lasers, including the carrier lifetime, the spontaneous emission efficiency and the threshold current density. A prospect of long wavelength GaInNAs VCSELs for high speed LANs is also discussed.
{"title":"Composition dependence of carrier lifetime and spontaneous emission of highly strained GaInNAs/GaAs QW lasers","authors":"F. Koyama, S. Sato, T. Miyamoto, K. Iga","doi":"10.1109/ICIPRM.1999.773758","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773758","url":null,"abstract":"The GaInNAs/GaAs system has been attracting much interest for 1.3 /spl mu/m monolithic vertical cavity surface emitting lasers (VCSELs). So far, room temperature operations of 1.3 /spl mu/m GaInNAs/GaAs edge emitting lasers grown by either gas source MBE or MOCVD have been demonstrated. However, the degradation of crystal qualities with increasing the nitrogen composition is a remaining problem. The origin for the deterioration is still unclear. It is essential to find the origin and to improve the quality of GaInNAs for realizing high performance long wavelength GaInNAs lasers. In this work, we present the composition dependence of emission characteristics of highly strained GaInNAs quantum well lasers, including the carrier lifetime, the spontaneous emission efficiency and the threshold current density. A prospect of long wavelength GaInNAs VCSELs for high speed LANs is also discussed.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"159 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133907668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773729
Hong Wang, G. Ng, S. Mcalister, R. Driad, R. Mckinnon
In this paper, bias stress tests and hot carrier induced degradation behavior in InP/InGaAs/InP double heterojunction bipolar transistors are reported. We have found that an unrecoverable increase of emitter-collector reverse current (I/sub CEO/) occurs during reverse-bias B-C junction stress, which is mainly due to the increase of the B-C junction leakage current. Furthermore, the hot carrier induced damage during the B-C bias stress does not only occur at the B-C junction but also at the B-E junction region. This subsequently causes the degradation of the device current gain (/spl beta/). We also show the dependence of the device degradation on different stress bias voltages.
{"title":"Hot-carrier induced degradation in InP/InGaAs/InP double heterojunction bipolar transistors","authors":"Hong Wang, G. Ng, S. Mcalister, R. Driad, R. Mckinnon","doi":"10.1109/ICIPRM.1999.773729","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773729","url":null,"abstract":"In this paper, bias stress tests and hot carrier induced degradation behavior in InP/InGaAs/InP double heterojunction bipolar transistors are reported. We have found that an unrecoverable increase of emitter-collector reverse current (I/sub CEO/) occurs during reverse-bias B-C junction stress, which is mainly due to the increase of the B-C junction leakage current. Furthermore, the hot carrier induced damage during the B-C bias stress does not only occur at the B-C junction but also at the B-E junction region. This subsequently causes the degradation of the device current gain (/spl beta/). We also show the dependence of the device degradation on different stress bias voltages.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130845683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773762
T. Sugaya, Y. Tanuma, T. Nakagawa, M. Ogura, K. Yonei, Y. Sugiyama
A field effect transistor (FET) using a single InGaAs quasi-quantum wire (QWR) structure as a channel has been fabricated. The quasi-QWR structures have been fabricated with As/sub 2/ flux and atomic hydrogen irradiation using molecular beam epitaxy on V-grooved InP substrate. The V-shape is preserved during InAlAs barrier layer growth due to a suppressed migration of In atoms under As/sub 2/ flux. The V-groove is not preserved and hence the QWR cannot be fabricated under As/sub 4/ flux. The single InGaAs quasi-QWR is used as a channel of the FET. The FET demonstrated the good saturation characteristics and its maximum transconductance is 300 mS/mm at a drain voltage of 0.5 V.
{"title":"InGaAs quasi-quantum-wire FET on V-grooved substrate by selective growth with As/sub 2/ flux in hydrogen-assisted molecular beam epitaxy","authors":"T. Sugaya, Y. Tanuma, T. Nakagawa, M. Ogura, K. Yonei, Y. Sugiyama","doi":"10.1109/ICIPRM.1999.773762","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773762","url":null,"abstract":"A field effect transistor (FET) using a single InGaAs quasi-quantum wire (QWR) structure as a channel has been fabricated. The quasi-QWR structures have been fabricated with As/sub 2/ flux and atomic hydrogen irradiation using molecular beam epitaxy on V-grooved InP substrate. The V-shape is preserved during InAlAs barrier layer growth due to a suppressed migration of In atoms under As/sub 2/ flux. The V-groove is not preserved and hence the QWR cannot be fabricated under As/sub 4/ flux. The single InGaAs quasi-QWR is used as a channel of the FET. The FET demonstrated the good saturation characteristics and its maximum transconductance is 300 mS/mm at a drain voltage of 0.5 V.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131098273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773720
W. Prost, U. Auer, A. Brennemann, K. Goser, F. Tegude
Negative-differential resistance devices, i.e. Resonant Tunneling Diodes (RTD) have recently enabled a substantial improvement in low-power memories and high-speed logic gates. For logic circuits two series connected RTDs are monolithically integrated with parallel HFET input branches building the monostable-bistable transition logic element (MOBILE). In this paper we report on drastic improvements of the MOBILE concept addressing the major restrictions: trade-off between output driving capability, number of inputs and additional current for the parallel input branches, critical design criteria for two independent technologies: HFET (threshold voltage, lateral current density) and RTD (device area, vertical current density).
负差分电阻器件，即谐振隧穿二极管（RTD），近来在低功耗存储器和高速逻辑门方面取得了重大改进。在逻辑电路中，两个串联的 RTD 与并联的 HFET 输入支路单片集成，构成了单稳态-双稳态转换逻辑元件 (MOBILE)。在本文中，我们报告了 MOBILE 概念的重大改进，解决了以下主要限制：输出驱动能力、输入数量和并行输入分支额外电流之间的权衡，以及两种独立技术的关键设计标准：HFET（阈值电压、横向电流密度）和 RTD（器件面积、纵向电流密度）。
{"title":"Novel MOBILE gates with low-power, relaxed parameter sensitivity, and increased driving capability","authors":"W. Prost, U. Auer, A. Brennemann, K. Goser, F. Tegude","doi":"10.1109/ICIPRM.1999.773720","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773720","url":null,"abstract":"Negative-differential resistance devices, i.e. Resonant Tunneling Diodes (RTD) have recently enabled a substantial improvement in low-power memories and high-speed logic gates. For logic circuits two series connected RTDs are monolithically integrated with parallel HFET input branches building the monostable-bistable transition logic element (MOBILE). In this paper we report on drastic improvements of the MOBILE concept addressing the major restrictions: trade-off between output driving capability, number of inputs and additional current for the parallel input branches, critical design criteria for two independent technologies: HFET (threshold voltage, lateral current density) and RTD (device area, vertical current density).","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"287 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133464633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773754
A. Hirama, H. Sai, H. Fujikura, H. Hasegawa
By carefully optimizing growth conditions based on RHEED, AFM, PL and Hall measurements, high-quality InGaP layers were successfully grown by gas source molecular beam epitaxy (GSMBE) using tertiarybutylphosphine (TBP) for the first time. The InGaP layers grown under the optimum condition showed a narrow and intense PL band-edge emission at low temperature as well as high electron mobility of 3300 cm/sup 2//Vs at 300 K. InGaP/GaAs/InGaP quantum wells (QWs) were also formed. The quality of the bottom interface of the QW strongly depended on the growth sequence. Under the optimum sequence, QWs showed intense and narrow PL peaks, whereas the unoptimized sequence led to interface-related PL emissions and poor PL properties.
{"title":"Growth of high quality InGaP and related heterostructures by gas-source molecular beam epitaxy using tertiarybutylphosphine","authors":"A. Hirama, H. Sai, H. Fujikura, H. Hasegawa","doi":"10.1109/ICIPRM.1999.773754","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773754","url":null,"abstract":"By carefully optimizing growth conditions based on RHEED, AFM, PL and Hall measurements, high-quality InGaP layers were successfully grown by gas source molecular beam epitaxy (GSMBE) using tertiarybutylphosphine (TBP) for the first time. The InGaP layers grown under the optimum condition showed a narrow and intense PL band-edge emission at low temperature as well as high electron mobility of 3300 cm/sup 2//Vs at 300 K. InGaP/GaAs/InGaP quantum wells (QWs) were also formed. The quality of the bottom interface of the QW strongly depended on the growth sequence. Under the optimum sequence, QWs showed intense and narrow PL peaks, whereas the unoptimized sequence led to interface-related PL emissions and poor PL properties.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114510052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773753
H. Sik, S. Bouchoule, S. Slempkes
Selective planar regrowth of high resistivity (as high as 10/sup 9/ /spl Omega/.cm) Fe-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial layers were grown with conventional growth conditions on patterned, nonplanar heterostructure mesa by low-pressure organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphine (TBP), trimethylindium (TMI) and iron dicyclopentadienyl (Fe(C5H5)2) as the reactant gases. This selective growth has been developed around laser stripes designed without overhang of the selective growth mask. And shows very good static characteristics of the SI-BH lasers as compared to standard BRS laser structures.
{"title":"Realisation of SI-BH lasers buried by selective LP-MOVPE regrowth under conventional conditions using TBP","authors":"H. Sik, S. Bouchoule, S. Slempkes","doi":"10.1109/ICIPRM.1999.773753","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773753","url":null,"abstract":"Selective planar regrowth of high resistivity (as high as 10/sup 9/ /spl Omega/.cm) Fe-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial layers were grown with conventional growth conditions on patterned, nonplanar heterostructure mesa by low-pressure organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphine (TBP), trimethylindium (TMI) and iron dicyclopentadienyl (Fe(C5H5)2) as the reactant gases. This selective growth has been developed around laser stripes designed without overhang of the selective growth mask. And shows very good static characteristics of the SI-BH lasers as compared to standard BRS laser structures.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116696151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773701
E. H. Bottcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg
The potential of InAs/GaAs quantum dots (QDs) as photoactive material for very high-speed long-wavelength photodetectors on GaAs substrate is evaluated. We report on the dynamic photoresponse of surface-illuminated metal-semiconductor-metal (MSM) detectors containing one absorbing InAs/GaAs QD layer which is grown by MOCVD. Moreover, we present data on the internal quantum efficiency near 1.3 /spl mu/m which provide an upper estimate of the /spl alpha/d product of a single QD layer. A 3-dB bandwidth of 35 GHz and a 1.3-/spl mu/m internal efficiency of -3.1/spl times/10/sup -4/ is observed. A novel traveling-wave configuration of an InAs/GaAs QD MSM detector with drastically improved quantum efficiency is proposed and analyzed.
{"title":"InAs/GaAs quantum dots: a material for very highspeed, long-wavelength photodetectors on GaAs","authors":"E. H. Bottcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg","doi":"10.1109/ICIPRM.1999.773701","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773701","url":null,"abstract":"The potential of InAs/GaAs quantum dots (QDs) as photoactive material for very high-speed long-wavelength photodetectors on GaAs substrate is evaluated. We report on the dynamic photoresponse of surface-illuminated metal-semiconductor-metal (MSM) detectors containing one absorbing InAs/GaAs QD layer which is grown by MOCVD. Moreover, we present data on the internal quantum efficiency near 1.3 /spl mu/m which provide an upper estimate of the /spl alpha/d product of a single QD layer. A 3-dB bandwidth of 35 GHz and a 1.3-/spl mu/m internal efficiency of -3.1/spl times/10/sup -4/ is observed. A novel traveling-wave configuration of an InAs/GaAs QD MSM detector with drastically improved quantum efficiency is proposed and analyzed.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130274548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773721
K. Maezawa, Y. Kawano, S. Kishimoto, M. Mizutani
The operating principle of this frequency divider is based on a bifurcation phenomenon in non-autonomous chaos system. This has several advantages, extremely high operating frequency, low power consumption due to circuit simplicity, selectable divide ratio, and compatibility with MMIC process. The operating principle was also demonstrated using discrete devices.
{"title":"A novel frequency divider using a resonant tunneling chaos circuit","authors":"K. Maezawa, Y. Kawano, S. Kishimoto, M. Mizutani","doi":"10.1109/ICIPRM.1999.773721","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773721","url":null,"abstract":"The operating principle of this frequency divider is based on a bifurcation phenomenon in non-autonomous chaos system. This has several advantages, extremely high operating frequency, low power consumption due to circuit simplicity, selectable divide ratio, and compatibility with MMIC process. The operating principle was also demonstrated using discrete devices.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127112413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773741
B. Shim, K. Bando, T. Ota, K. Kobayashi, H. Nakashima
InGaAs quantum wires (QWRs) are grown on GaAs vicinal (110) surfaces with the giant step by MBE. These QWRs are induced by thickness modulation at coherently aligned giant step edges. Crosssectional transmission electron microscope (TEM) observation shows that the In,Gal-,As is thicker at step edges than on terrace regions, resulting in QWRs formation. Photoluminescence (PL) measurements reveal that the PL peak of In,Gal-,As QWRs shift to lower energies compared to those of In,Gal-,As quantum well (QWL) on GaAs (100) substrates grown at the same time. The PL of these In,Gal.,As QWRs exhibited a strong polarization anisotropy which increased with increasing InAs composition. PL peak positions of thick In,Gal-,As QWRs shift to higher energies with increasing InAs composition, and to lower energies with increasing growth thickness. PL peak positions of thin QWRs shift higher energies with increasing InAs composition due to reduced effective mass.
{"title":"Size and composition dependence of photoluminescence from In/sub x/Ga/sub 1-x/As quantum wires","authors":"B. Shim, K. Bando, T. Ota, K. Kobayashi, H. Nakashima","doi":"10.1109/ICIPRM.1999.773741","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773741","url":null,"abstract":"InGaAs quantum wires (QWRs) are grown on GaAs vicinal (110) surfaces with the giant step by MBE. These QWRs are induced by thickness modulation at coherently aligned giant step edges. Crosssectional transmission electron microscope (TEM) observation shows that the In,Gal-,As is thicker at step edges than on terrace regions, resulting in QWRs formation. Photoluminescence (PL) measurements reveal that the PL peak of In,Gal-,As QWRs shift to lower energies compared to those of In,Gal-,As quantum well (QWL) on GaAs (100) substrates grown at the same time. The PL of these In,Gal.,As QWRs exhibited a strong polarization anisotropy which increased with increasing InAs composition. PL peak positions of thick In,Gal-,As QWRs shift to higher energies with increasing InAs composition, and to lower energies with increasing growth thickness. PL peak positions of thin QWRs shift higher energies with increasing InAs composition due to reduced effective mass.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"38 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127987734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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