Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773655
H. Pinkney, D. Thompson, B. Robinson, P. Simpson, U. Myler, R. Streater
In this paper, we present the properties of InGaAsP (1.55 /spl mu/m) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the carrier concentration in both doped and undoped samples, open volume defects which enlarge upon anneal, and a small concentration of hydrogen, all of which may play a role in the behavior of this novel material.
{"title":"Characterization of He-plasma-assisted GSMBE InGaAsP","authors":"H. Pinkney, D. Thompson, B. Robinson, P. Simpson, U. Myler, R. Streater","doi":"10.1109/ICIPRM.1999.773655","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773655","url":null,"abstract":"In this paper, we present the properties of InGaAsP (1.55 /spl mu/m) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the carrier concentration in both doped and undoped samples, open volume defects which enlarge upon anneal, and a small concentration of hydrogen, all of which may play a role in the behavior of this novel material.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126289087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773662
Q. Lee, S. Martin, D. Mensa, R.P. Smith, J. Guthrie, S. Jaganathan, T. Mathew, S. Krishnan, S. Creran, M. Rodwell
We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors. Devices with 0.4 /spl mu/m emitter and 0.9 /spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cut-off frequency f/sub max/ is 820 GHz.
{"title":"Submicron transferred-substrate heterojunction bipolar transistors with greater than 8000 GHz f/sub max/","authors":"Q. Lee, S. Martin, D. Mensa, R.P. Smith, J. Guthrie, S. Jaganathan, T. Mathew, S. Krishnan, S. Creran, M. Rodwell","doi":"10.1109/ICIPRM.1999.773662","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773662","url":null,"abstract":"We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors. Devices with 0.4 /spl mu/m emitter and 0.9 /spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cut-off frequency f/sub max/ is 820 GHz.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115611703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773704
Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani
The resonant tunneling through single InAs quantum dots embedded in an GaAs/i-Al/sub 0.38/Ga/sub 0.62/As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. A group of sharp luminescence lines which originate from single quantum dots was observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line has been investigated. The peak intensity shows triangular dependence which is similar to the current-voltage characteristics of 3D-0D resonant tunneling. When the bias voltage increases, the peak energy slightly shifts to a lower energy indicating the existence of stark effect, and the linewidth slightly increases. Moreover, the higher the luminescence energy is, the broader the linewidth is. This result agrees with the calculated resonant level width. The lifetime of resonant states is estimated to be 2.4-27 ps for luminescence linewidth of 250-22 /spl mu/eV.
{"title":"Observation of resonant tunneling through InAs quantum dots by using novel electrophotoluminescence spectroscopy","authors":"Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani","doi":"10.1109/ICIPRM.1999.773704","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773704","url":null,"abstract":"The resonant tunneling through single InAs quantum dots embedded in an GaAs/i-Al/sub 0.38/Ga/sub 0.62/As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. A group of sharp luminescence lines which originate from single quantum dots was observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line has been investigated. The peak intensity shows triangular dependence which is similar to the current-voltage characteristics of 3D-0D resonant tunneling. When the bias voltage increases, the peak energy slightly shifts to a lower energy indicating the existence of stark effect, and the linewidth slightly increases. Moreover, the higher the luminescence energy is, the broader the linewidth is. This result agrees with the calculated resonant level width. The lifetime of resonant states is estimated to be 2.4-27 ps for luminescence linewidth of 250-22 /spl mu/eV.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121193675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773693
C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button
We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.
{"title":"Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions","authors":"C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button","doi":"10.1109/ICIPRM.1999.773693","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773693","url":null,"abstract":"We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122435827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773682
T. Asahi, M. Uchida, K. Kainosho, O. Oda
100 mm diameter <100> semi-insulating InP substrates were obtained after conductive undoped wafers were annealed under volatile FeP/sub 2/ atmosphere. Undoped crystals were grown by the VGF method using a high pressure furnace. In this growth method, we investigated the reduction of the temperature fluctuation by computer simulation for preventing twinning. The temperature fluctuation near the seed crystal could be reduced from /spl plusmn/0.3/spl deg/C to /spl plusmn/0.03/spl deg/C after improvement of the hot-zone, based on the simulation results. Semi-insulating InP is conventionally produced by Fe doping during crystal growth. In the conventional doping method, the Fe concentration is varied along the growth axis due to Fe segregation in InP. In order to obtain good homogeneity of Fe concentrations from wafer to wafer, we have developed a new Fe doping technology in which wafers are annealed under volatile FeP/sub 2/ atmosphere. In this work, we applied this Fe doping technology to 100 mm diameter <100> InP substrates and could obtain large diameter semi-insulating substrates.
{"title":"VGF crystal growth and vapor-phase Fe doping technologies for semi-insulating 100 mm diameter InP substrates","authors":"T. Asahi, M. Uchida, K. Kainosho, O. Oda","doi":"10.1109/ICIPRM.1999.773682","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773682","url":null,"abstract":"100 mm diameter <100> semi-insulating InP substrates were obtained after conductive undoped wafers were annealed under volatile FeP/sub 2/ atmosphere. Undoped crystals were grown by the VGF method using a high pressure furnace. In this growth method, we investigated the reduction of the temperature fluctuation by computer simulation for preventing twinning. The temperature fluctuation near the seed crystal could be reduced from /spl plusmn/0.3/spl deg/C to /spl plusmn/0.03/spl deg/C after improvement of the hot-zone, based on the simulation results. Semi-insulating InP is conventionally produced by Fe doping during crystal growth. In the conventional doping method, the Fe concentration is varied along the growth axis due to Fe segregation in InP. In order to obtain good homogeneity of Fe concentrations from wafer to wafer, we have developed a new Fe doping technology in which wafers are annealed under volatile FeP/sub 2/ atmosphere. In this work, we applied this Fe doping technology to 100 mm diameter <100> InP substrates and could obtain large diameter semi-insulating substrates.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131187392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773647
P. Royo, M. Ilegems, M. Moser, R. Hovel, H. P. Schweizer, K. Gulden
Visible top emitting microcavity light emitting diodes have been fabricated. The structure consists of two AlGaAs-AlAs Bragg reflectors surrounding an AlGaInP cavity with three GaInP quantum wells. The extraction efficiency of these structures can be maximized optimising the detuning between the quantum well emission and the cavity mode wavelength. We have grown a structure with parabolic profiles of thickness for the reflector layers only: the cavity mode wavelength was continuously shifted by 60 nm over the wafer. We measured a maximum of external quantum efficiency of 1.2% corresponding to a detuning of -12 nm in good agreement with analytical simulations. This result enabled us to estimate an internal quantum efficiency of 50% at a current density of 20 A/cm/sup 2/.
制备了可见顶发射微腔发光二极管。该结构由两个alggaas - alas Bragg反射器组成，围绕着一个具有三个GaInP量子阱的AlGaInP腔。通过优化量子阱发射和腔模波长之间的失谐，可以最大限度地提高这些结构的提取效率。我们已经培养了一个仅反射层厚度为抛物线型的结构:在晶圆上，腔模波长连续移动了60 nm。我们测量的最大外量子效率为1.2%，对应于-12 nm的失谐，与分析模拟很好地一致。这一结果使我们能够估计在电流密度为20 a /cm/sup /时的内部量子效率为50%。
{"title":"Controlled growth variation for the detuning of AlGaInP-based microcavity light emitting diodes","authors":"P. Royo, M. Ilegems, M. Moser, R. Hovel, H. P. Schweizer, K. Gulden","doi":"10.1109/ICIPRM.1999.773647","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773647","url":null,"abstract":"Visible top emitting microcavity light emitting diodes have been fabricated. The structure consists of two AlGaAs-AlAs Bragg reflectors surrounding an AlGaInP cavity with three GaInP quantum wells. The extraction efficiency of these structures can be maximized optimising the detuning between the quantum well emission and the cavity mode wavelength. We have grown a structure with parabolic profiles of thickness for the reflector layers only: the cavity mode wavelength was continuously shifted by 60 nm over the wafer. We measured a maximum of external quantum efficiency of 1.2% corresponding to a detuning of -12 nm in good agreement with analytical simulations. This result enabled us to estimate an internal quantum efficiency of 50% at a current density of 20 A/cm/sup 2/.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115674080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773761
F. Lelarge, K. Leifer, A. Condó, V. Iakovlev, E. Martinet, C. Constantin, A. Rudra, E. Kapon
Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum well structure with In-enriched composition. The lateral definition permits the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. We study the influence of the nominal thickness and In content on the photoluminescence peak wavelength of V-grooved quantum wires. Finally, room temperature emission at 1.12 /spl mu/m with relatively narrow linewidth (30-35 meV) is demonstrated.
{"title":"InGaAs/GaAs strained quantum wires grown by OMCVD on corrugated substrates","authors":"F. Lelarge, K. Leifer, A. Condó, V. Iakovlev, E. Martinet, C. Constantin, A. Rudra, E. Kapon","doi":"10.1109/ICIPRM.1999.773761","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773761","url":null,"abstract":"Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum well structure with In-enriched composition. The lateral definition permits the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. We study the influence of the nominal thickness and In content on the photoluminescence peak wavelength of V-grooved quantum wires. Finally, room temperature emission at 1.12 /spl mu/m with relatively narrow linewidth (30-35 meV) is demonstrated.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115837888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773756
J. Benchimol, J. Mba, A.R. Duchenois, P. Berdaguer, B. Sermage, G. Le Roux, S. Blayac, M. Riet, J. Thuret, C. Gonzalez, P. Andre
InGaAs/lnP heterojunction bipolar transistors (HBT) with a carbon doped base are shown to have lower gain than those with Be doped base, partly because of lower electron lifetime. In order to keep advantage of the low diffusivity of carbon dopant, a composition graduality is introduced in the base, which significantly improves the current gain of HBT's. This graduality also leads to some advantageous side effects such as higher doping levels, low base sheet resistance and constant gain over a four-decade current range, without degrading the lifetime of the device. Such structures were processed as single HBT devices with high frequency performances (f/sub t/=168 GHz), digital circuits (2:1 MUX) operating at 46 Gbit/s and phototransistors with 35 dB optical gain and 62 GHz optical cut-off frequency.
{"title":"Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base","authors":"J. Benchimol, J. Mba, A.R. Duchenois, P. Berdaguer, B. Sermage, G. Le Roux, S. Blayac, M. Riet, J. Thuret, C. Gonzalez, P. Andre","doi":"10.1109/ICIPRM.1999.773756","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773756","url":null,"abstract":"InGaAs/lnP heterojunction bipolar transistors (HBT) with a carbon doped base are shown to have lower gain than those with Be doped base, partly because of lower electron lifetime. In order to keep advantage of the low diffusivity of carbon dopant, a composition graduality is introduced in the base, which significantly improves the current gain of HBT's. This graduality also leads to some advantageous side effects such as higher doping levels, low base sheet resistance and constant gain over a four-decade current range, without degrading the lifetime of the device. Such structures were processed as single HBT devices with high frequency performances (f/sub t/=168 GHz), digital circuits (2:1 MUX) operating at 46 Gbit/s and phototransistors with 35 dB optical gain and 62 GHz optical cut-off frequency.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"810 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123046704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773774
D. Jahan, P. Legay, F. Alexandre
Monolithic device integration is more and more essential for the realisation of micro and optoelectronic circuits, which can fulfil complex functions with higher performances. The most prevalent approach in the fabrication of photonic integrated circuits (PICs) is the butt-coupling. This can be done in one step by Selective Area Growth (SAG) carried out by Metalorganic Vapour Phase Epitaxy (MOVPE) or by localised selective regrowth by Chemical Beam Epitaxy (CBE). The former technique inconvenient is that the structures of the devices cannot be quite different, especially, if one of them should be doped, the others will be doped as well. The latter method needs one epitaxial step for each integrated structure and requires several etching steps, which can deteriorate the performances of the regrown devices. This study proposes a new procedure to integrate several devices without any etching step.
{"title":"Photonic integration technology without semiconductor etching","authors":"D. Jahan, P. Legay, F. Alexandre","doi":"10.1109/ICIPRM.1999.773774","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773774","url":null,"abstract":"Monolithic device integration is more and more essential for the realisation of micro and optoelectronic circuits, which can fulfil complex functions with higher performances. The most prevalent approach in the fabrication of photonic integrated circuits (PICs) is the butt-coupling. This can be done in one step by Selective Area Growth (SAG) carried out by Metalorganic Vapour Phase Epitaxy (MOVPE) or by localised selective regrowth by Chemical Beam Epitaxy (CBE). The former technique inconvenient is that the structures of the devices cannot be quite different, especially, if one of them should be doped, the others will be doped as well. The latter method needs one epitaxial step for each integrated structure and requires several etching steps, which can deteriorate the performances of the regrown devices. This study proposes a new procedure to integrate several devices without any etching step.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"163 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123270223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773705
S. Hinooda, N. Bertru, S. Fréchengues, B. Lambert, S. Loualiche, M. Paillard, X. Marie, T. Amand
Carrier capture of InAs quantum dots structure on InP (311)B substrate has been studied by optical measurements. Photoluminescence measurements shows a clear decrease of the decay time of the two dimensional confining layer at high temperature under lower excitation. A strong decrease of the decay time has also been observed under high incident excitation even at low temperature. These effects are explained, by a very simple model, as a consequence of carrier capture into quantum dots assisted by a thermal activation of carriers and energy relaxation through the Auger process.
{"title":"Carrier capture in self-assembled InAs/InP quantum dots","authors":"S. Hinooda, N. Bertru, S. Fréchengues, B. Lambert, S. Loualiche, M. Paillard, X. Marie, T. Amand","doi":"10.1109/ICIPRM.1999.773705","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773705","url":null,"abstract":"Carrier capture of InAs quantum dots structure on InP (311)B substrate has been studied by optical measurements. Photoluminescence measurements shows a clear decrease of the decay time of the two dimensional confining layer at high temperature under lower excitation. A strong decrease of the decay time has also been observed under high incident excitation even at low temperature. These effects are explained, by a very simple model, as a consequence of carrier capture into quantum dots assisted by a thermal activation of carriers and energy relaxation through the Auger process.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121585566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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