Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773655
H. Pinkney, D. Thompson, B. Robinson, P. Simpson, U. Myler, R. Streater
In this paper, we present the properties of InGaAsP (1.55 /spl mu/m) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the carrier concentration in both doped and undoped samples, open volume defects which enlarge upon anneal, and a small concentration of hydrogen, all of which may play a role in the behavior of this novel material.
{"title":"Characterization of He-plasma-assisted GSMBE InGaAsP","authors":"H. Pinkney, D. Thompson, B. Robinson, P. Simpson, U. Myler, R. Streater","doi":"10.1109/ICIPRM.1999.773655","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773655","url":null,"abstract":"In this paper, we present the properties of InGaAsP (1.55 /spl mu/m) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the carrier concentration in both doped and undoped samples, open volume defects which enlarge upon anneal, and a small concentration of hydrogen, all of which may play a role in the behavior of this novel material.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126289087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773662
Q. Lee, S. Martin, D. Mensa, R.P. Smith, J. Guthrie, S. Jaganathan, T. Mathew, S. Krishnan, S. Creran, M. Rodwell
We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors. Devices with 0.4 /spl mu/m emitter and 0.9 /spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cut-off frequency f/sub max/ is 820 GHz.
{"title":"Submicron transferred-substrate heterojunction bipolar transistors with greater than 8000 GHz f/sub max/","authors":"Q. Lee, S. Martin, D. Mensa, R.P. Smith, J. Guthrie, S. Jaganathan, T. Mathew, S. Krishnan, S. Creran, M. Rodwell","doi":"10.1109/ICIPRM.1999.773662","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773662","url":null,"abstract":"We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors. Devices with 0.4 /spl mu/m emitter and 0.9 /spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cut-off frequency f/sub max/ is 820 GHz.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115611703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773704
Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani
The resonant tunneling through single InAs quantum dots embedded in an GaAs/i-Al/sub 0.38/Ga/sub 0.62/As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. A group of sharp luminescence lines which originate from single quantum dots was observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line has been investigated. The peak intensity shows triangular dependence which is similar to the current-voltage characteristics of 3D-0D resonant tunneling. When the bias voltage increases, the peak energy slightly shifts to a lower energy indicating the existence of stark effect, and the linewidth slightly increases. Moreover, the higher the luminescence energy is, the broader the linewidth is. This result agrees with the calculated resonant level width. The lifetime of resonant states is estimated to be 2.4-27 ps for luminescence linewidth of 250-22 /spl mu/eV.
{"title":"Observation of resonant tunneling through InAs quantum dots by using novel electrophotoluminescence spectroscopy","authors":"Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, T. Mizutani","doi":"10.1109/ICIPRM.1999.773704","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773704","url":null,"abstract":"The resonant tunneling through single InAs quantum dots embedded in an GaAs/i-Al/sub 0.38/Ga/sub 0.62/As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. A group of sharp luminescence lines which originate from single quantum dots was observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line has been investigated. The peak intensity shows triangular dependence which is similar to the current-voltage characteristics of 3D-0D resonant tunneling. When the bias voltage increases, the peak energy slightly shifts to a lower energy indicating the existence of stark effect, and the linewidth slightly increases. Moreover, the higher the luminescence energy is, the broader the linewidth is. This result agrees with the calculated resonant level width. The lifetime of resonant states is estimated to be 2.4-27 ps for luminescence linewidth of 250-22 /spl mu/eV.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121193675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773693
C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button
We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.
{"title":"Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions","authors":"C. H. Tan, K.F. Li, S. Plimmer, J. David, G. Rees, J. Clark, C. Button","doi":"10.1109/ICIPRM.1999.773693","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773693","url":null,"abstract":"We report measurements of electron initiated avalanche noise at room temperature in a range of InP p/sup +/-i-n/sup +/ diodes with i-region widths, M ranging from 2.40 /spl mu/m to 0.24 /spl mu/m. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p/sup +/-i-n/sup +/ diodes with nominal i-region widths of 0.30 /spl mu/m and 0.50 /spl mu/m at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122435827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773682
T. Asahi, M. Uchida, K. Kainosho, O. Oda
100 mm diameter <100> semi-insulating InP substrates were obtained after conductive undoped wafers were annealed under volatile FeP/sub 2/ atmosphere. Undoped crystals were grown by the VGF method using a high pressure furnace. In this growth method, we investigated the reduction of the temperature fluctuation by computer simulation for preventing twinning. The temperature fluctuation near the seed crystal could be reduced from /spl plusmn/0.3/spl deg/C to /spl plusmn/0.03/spl deg/C after improvement of the hot-zone, based on the simulation results. Semi-insulating InP is conventionally produced by Fe doping during crystal growth. In the conventional doping method, the Fe concentration is varied along the growth axis due to Fe segregation in InP. In order to obtain good homogeneity of Fe concentrations from wafer to wafer, we have developed a new Fe doping technology in which wafers are annealed under volatile FeP/sub 2/ atmosphere. In this work, we applied this Fe doping technology to 100 mm diameter <100> InP substrates and could obtain large diameter semi-insulating substrates.
{"title":"VGF crystal growth and vapor-phase Fe doping technologies for semi-insulating 100 mm diameter InP substrates","authors":"T. Asahi, M. Uchida, K. Kainosho, O. Oda","doi":"10.1109/ICIPRM.1999.773682","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773682","url":null,"abstract":"100 mm diameter <100> semi-insulating InP substrates were obtained after conductive undoped wafers were annealed under volatile FeP/sub 2/ atmosphere. Undoped crystals were grown by the VGF method using a high pressure furnace. In this growth method, we investigated the reduction of the temperature fluctuation by computer simulation for preventing twinning. The temperature fluctuation near the seed crystal could be reduced from /spl plusmn/0.3/spl deg/C to /spl plusmn/0.03/spl deg/C after improvement of the hot-zone, based on the simulation results. Semi-insulating InP is conventionally produced by Fe doping during crystal growth. In the conventional doping method, the Fe concentration is varied along the growth axis due to Fe segregation in InP. In order to obtain good homogeneity of Fe concentrations from wafer to wafer, we have developed a new Fe doping technology in which wafers are annealed under volatile FeP/sub 2/ atmosphere. In this work, we applied this Fe doping technology to 100 mm diameter <100> InP substrates and could obtain large diameter semi-insulating substrates.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131187392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773761
F. Lelarge, K. Leifer, A. Condó, V. Iakovlev, E. Martinet, C. Constantin, A. Rudra, E. Kapon
Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum well structure with In-enriched composition. The lateral definition permits the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. We study the influence of the nominal thickness and In content on the photoluminescence peak wavelength of V-grooved quantum wires. Finally, room temperature emission at 1.12 /spl mu/m with relatively narrow linewidth (30-35 meV) is demonstrated.
{"title":"InGaAs/GaAs strained quantum wires grown by OMCVD on corrugated substrates","authors":"F. Lelarge, K. Leifer, A. Condó, V. Iakovlev, E. Martinet, C. Constantin, A. Rudra, E. Kapon","doi":"10.1109/ICIPRM.1999.773761","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773761","url":null,"abstract":"Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum well structure with In-enriched composition. The lateral definition permits the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. We study the influence of the nominal thickness and In content on the photoluminescence peak wavelength of V-grooved quantum wires. Finally, room temperature emission at 1.12 /spl mu/m with relatively narrow linewidth (30-35 meV) is demonstrated.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115837888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773673
M. Fujita, T. Baba, A. Matsutani, F. Koyama, K. Iga
We have proposed and demonstrated a novel 1.5-/spl mu/m-GaInAsP microcylinder laser with low refractive index InAlAs(O/sub x/) claddings, which allows the strong optical confinement as in a microdisk. The effective threshold current density was 25% lower than that for the previous 0.98-/spl mu/m-GaInAs device. The selective oxidation of the claddings is expected to further reduce the threshold and extend the feasibility of this type of device in large scale photonic circuits.
{"title":"A novel GaInAsP microcylinder laser with AlInAs(O/sub x/) claddings","authors":"M. Fujita, T. Baba, A. Matsutani, F. Koyama, K. Iga","doi":"10.1109/ICIPRM.1999.773673","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773673","url":null,"abstract":"We have proposed and demonstrated a novel 1.5-/spl mu/m-GaInAsP microcylinder laser with low refractive index InAlAs(O/sub x/) claddings, which allows the strong optical confinement as in a microdisk. The effective threshold current density was 25% lower than that for the previous 0.98-/spl mu/m-GaInAs device. The selective oxidation of the claddings is expected to further reduce the threshold and extend the feasibility of this type of device in large scale photonic circuits.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"104 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115825383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773631
T. Tsuchiya, D. Takemoto, A. Taike, M. Aoki, K. Uomi
We have found that the crystalline quality at the well-barrier interfaces of an InGaAlAs strain-compensated MQW structure grown by MOVPE is much higher than that of an InGaAsP strain-compensated MQW structure, especially for a high strain. A large number of periods (25) in a highly strained (+1.4%) InGaAlAs MQW structure was obtained while preserving high crystalline quality by using the InGaAlAs strain-compensated structure.
{"title":"Large number of periods in highly strained InGaAlAs/InGaAlAs MQW structures grown by metalorganic vapor-phase epitaxy","authors":"T. Tsuchiya, D. Takemoto, A. Taike, M. Aoki, K. Uomi","doi":"10.1109/ICIPRM.1999.773631","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773631","url":null,"abstract":"We have found that the crystalline quality at the well-barrier interfaces of an InGaAlAs strain-compensated MQW structure grown by MOVPE is much higher than that of an InGaAsP strain-compensated MQW structure, especially for a high strain. A large number of periods (25) in a highly strained (+1.4%) InGaAlAs MQW structure was obtained while preserving high crystalline quality by using the InGaAlAs strain-compensated structure.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124232760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773659
T. Kita, M. Sakurai, K. Yamashita, T. Nishino
We demonstrate inelastic phonon scattering to be the dominant intradomain carrier-relaxation mechanism in partially ordered (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P. Carrier relaxation and recombination in partially ordered (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P have been studied by selectively excited photoluminescence (PL) spectroscopy. The partial ordering of the column-III sublattices causes a multidomain structure in the epitaxial film. The strongly modulated near-resonant excitation efficiency enables selective excitation of the ordered domains with a ground-state transition energy below the excitation energy, In the selectively excited PL spectra, we observed LA-phonon resonances as well as LO-phonon resonances. The LA-phonon resonances are new phonon modes caused by zone-folding effects and alloy disordering effects in the ordered alloy. The observation of the phonon resonances in the PL spectra is discussed in analogy to hot exciton relaxation in higher dimensional semiconductor system and proposed to be intricately bound to the inhomogeneity of the ordered domain ensemble.
我们证明了非弹性声子散射是部分有序(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/ in /sub 0.5/P中主要的域内载流子弛豫机制。利用选择性激发光致发光(PL)技术研究了部分有序(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/ in /sub 0.5/P中的载流子弛豫和复合。iii列亚晶格的偏序导致外延膜中的多畴结构。强调制的近共振激发效率使得基态跃迁能量低于激发能量的有序域能够被选择性激发。在选择性激发的PL光谱中，我们观察到la声子共振和lo声子共振。la -声子共振是由有序合金中的区域折叠效应和合金无序效应引起的新的声子模式。声子共振在PL光谱中的观察与高维半导体系统中的热激子弛豫类似，并提出与有序域系综的非均匀性复杂地联系在一起。
{"title":"Energy relaxation by multiphonon processes in partially ordered (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P","authors":"T. Kita, M. Sakurai, K. Yamashita, T. Nishino","doi":"10.1109/ICIPRM.1999.773659","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773659","url":null,"abstract":"We demonstrate inelastic phonon scattering to be the dominant intradomain carrier-relaxation mechanism in partially ordered (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P. Carrier relaxation and recombination in partially ordered (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P have been studied by selectively excited photoluminescence (PL) spectroscopy. The partial ordering of the column-III sublattices causes a multidomain structure in the epitaxial film. The strongly modulated near-resonant excitation efficiency enables selective excitation of the ordered domains with a ground-state transition energy below the excitation energy, In the selectively excited PL spectra, we observed LA-phonon resonances as well as LO-phonon resonances. The LA-phonon resonances are new phonon modes caused by zone-folding effects and alloy disordering effects in the ordered alloy. The observation of the phonon resonances in the PL spectra is discussed in analogy to hot exciton relaxation in higher dimensional semiconductor system and proposed to be intricately bound to the inhomogeneity of the ordered domain ensemble.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125091836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1999-05-16DOI: 10.1109/ICIPRM.1999.773668
M. Beck, A. Muller, J. Faist, C. Sirtori, U. Oesterle, M. Ilegems
We report quantum cascade lasers grown on InP and GaAs by molecular beam epitaxy. On InP, lattice matched structures exceeding 80 mW of pulsed optical power at room temperature are electrically tunable from 10.2 to 10.5 /spl mu/m. Strain compensated heterostructures emitting at 4.9 /spl mu/m operate almost up to room temperature. The first lasing AlGaAs/GaAs quantum cascade laser emitting at 9.4 /spl mu/m and operating up to 160 K is also presented.
{"title":"InP- and GaAs-based quantum cascade lasers","authors":"M. Beck, A. Muller, J. Faist, C. Sirtori, U. Oesterle, M. Ilegems","doi":"10.1109/ICIPRM.1999.773668","DOIUrl":"https://doi.org/10.1109/ICIPRM.1999.773668","url":null,"abstract":"We report quantum cascade lasers grown on InP and GaAs by molecular beam epitaxy. On InP, lattice matched structures exceeding 80 mW of pulsed optical power at room temperature are electrically tunable from 10.2 to 10.5 /spl mu/m. Strain compensated heterostructures emitting at 4.9 /spl mu/m operate almost up to room temperature. The first lasing AlGaAs/GaAs quantum cascade laser emitting at 9.4 /spl mu/m and operating up to 160 K is also presented.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125210266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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