Efficient detection and removal of sulfur dioxide (SO2) from the atmosphere are critical for environmental protection and public health. In this work, we employ quantum engineering approaches to explore the potential of metal-doped and vacancy-modified gallium sulfide monolayers (GaSMLs) as reusable and sensitive SO₂ gas sensors. Using Grimme DFT-D approach, we systematically investigate the adsorption energies, charge transfer characteristics, electronic structure changes, work function modifications, and recovery times for SO₂ adsorption on pristine, vacancy-defective, and various metal-doped GaSML configurations. The adsorption energies calculated for GaSMLs (pristine and defective) range from −9.27 to −49.0 kcal/mol for sulfur-site modifications and from −3.0 to −9.59 kcal/mol for gallium-site modifications, demonstrating a wide range of adsorption capabilities that can be systematically modulated through defect engineering. Our results reveal that metal doping at sulfur sites, particularly with Mn, Cr, and Ni, significantly enhances SO₂ adsorption strength, charge transfer, and work function, accompanied by a notable narrowing of the band gap. These doped systems exhibit a balanced recovery time ranging from hundreds to thousands of seconds, suggesting practical reusability with mild external stimuli. Vacancy defects at sulfur sites also offer promising sensor performance with rapid desorption kinetics. Conversely, Fe doping, despite exhibiting the strongest adsorption, results in prohibitively long recovery times, limiting sensor applicability. This integrated analysis identifies Mn, Cr, and Ni-doped GaSMLs as optimal candidates for high-performance, reusable SO₂ sensors, capable of efficient environmental SO₂ clearance. These findings provide valuable insights for the rational design of two-dimensional materials engineered at the quantum level for sustainable gas sensing and pollution control.
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