The WS2 thin layers were deposited on SiO2 /Si substrate by pulsed laser deposition (PLD). The third harmonic Q switched Nd:YAG (Neodymium-doped Yttrium Aluminum Garnet) laser of 355 nm wavelength and nanosecond pulse duration was used. The laser energy was tuned between 20 mJ to 30 mJ. The influence of the laser energy on the thickness, optical and electrical transport properties of the layers was studied. The A1g (Γ) & E12g(Γ) Raman peak position difference increased and the I E12g/I A1g peak intensity ratio decreased with the increase of the laser energy. It indicated the increase in the number of WS2 layers with the increase of the laser energy. The X-ray diffraction (XRD) showed a mixed polymorphic phase of 2H and 1T WS2. It also indicated prominent (002) 2H WS2 peak for 25 mJ and 30 mJ laser energy and an additional 1T WS2 peak for 20 mJ laser energy. The energy-dispersive X-ray (EDX) analysis showed S (Sulfur) deficient WS2 layers. The spectroscopic ellipsometry (SE) was used to determine layer thickness, bandgap, electrical conductivity and carrier mobility of the layers. The SE fitted results showed WS2 layer thickness of 0.7 nm, 1.4 nm & 2.0 nm for laser energy of 20 mJ, 25 mJ & 30 mJ, respectively. The SE fitted data showed that the conductivity and the bandgap decreased with the increase of the laser energy. The uniqueness of the study lies on low laser energy investigation of PLD and optical and electrical characterization of WS2 layers by SE.
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