This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix, and a method based on a Polish patent application number P.443805. The first two methods are commonly used, while the third differs in the sequence of successive steps and the presence of Be doping at the initial growth stage. By comparing GaSb layers made by these methods for the same growth parameters, the most favorable procedure for forming a GaSb buffer layer is selected. Using GaAs substrates with a GaSb buffer layer is a cheaper alternative to using GaSb substrates in infrared detector structures based on II-type superlattices T2SL, such as InAs/GaSb. The quality of the GaSb buffer layer determines the quality of the subsequent layers that form the entire T2SL and affects factors such as dark current in terms of application.
The generation of clean energy hydrogen through solar-driven water decomposition is an effective solution to the current global energy shortage and environmental pollution. In this paper, ZnO/WS2 heterojunction is constructed based on first-principles. The effect of uniaxial strain and vacancy defects (VZn, VO, VS, V2S) on electronic and optical properties of ZnO/WS2 heterojunction are calculated. The results indicate that the bandgap of the heterojunction is decreased and the visible absorption range is expanding. Additionally, the built-in electric field of the heterojunction is determined to be oriented from ZnO to WS2, which enhances the efficiency of carrier separation. Band-edge position analysis indicates that ZnO/WS2 heterojunctions exhibit good redox water properties under an applied compressive strain of −2 %. Finally, the visible light absorption range of the heterostructures is also expanded by introducing VS and V2S vacancy defects. However, it exhibits a superior ability to oxidize and reduce water only under VZn defects. The corresponding photocatalytic mechanism of ZnO/WS2 heterojunctions is discussed.
Iron-based materials are promising sorbents for controlling arsenic emissions. However, the effects of SO2, especially the synergistic mechanism of As2O3 adsorption under the combined effects of O2 and SO2, remain inadequately explored. This study investigated for the first time the impact of the newly formed surface resulting from the adsorption and dissociation of O2 and SO2 on the adsorption of As2O3. The results showed that Mn3f and Fe3f sites were the active sites for the adsorption of O2 and SO2, which competed with As2O3 and hindered its adsorption. Conversely, dissociation created more reactive sites, which promoted the process. Selectivity analysis revealed that As2O3 preferentially adsorbed on the dissociated surface, highlighting the dominance of the promotion effect. Finally, starting from the adsorption sequence of O2 and SO2, the impact of arsenic adsorption and oxidation was examined on sorbents created through the sequential adsorption of O2 and SO2. Regardless of the adsorption sequence, active O atoms with catalytic effects were exposed, supporting the enhanced removal of arsenic under the synergistic effect of O2 and SO2. Building upon this analysis, a theoretical framework for efficiently removing As2O3 from O2 and SO2 flue gases using Mn-modified Fe2O3-based materials was developed.