Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497491
S. Soda, Y. Yoshida, M. Hangai, T. Nishino, S. Izuo, M. Taguchi
The authors presented the characteristics of high power handling capability with direct contact MEMS switches. The switch has a movable-waveguide, fabricated on a silicon cavity. Two types of MEMS switches with different number of contact points were fabricated. In high power handling experiments with hot switching mode, a multiple-contact type switch failed at 1.6 W in 7 GHz RF signal, while a single-contact type switch was succeeded up to 2.4 W. These results were considered from the viewpoint of contact force and surface asperities according to the relation between input power and insertion loss.
{"title":"High power handling capability of movable-waveguide direct contact MEMS switches","authors":"S. Soda, Y. Yoshida, M. Hangai, T. Nishino, S. Izuo, M. Taguchi","doi":"10.1109/SENSOR.2005.1497491","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497491","url":null,"abstract":"The authors presented the characteristics of high power handling capability with direct contact MEMS switches. The switch has a movable-waveguide, fabricated on a silicon cavity. Two types of MEMS switches with different number of contact points were fabricated. In high power handling experiments with hot switching mode, a multiple-contact type switch failed at 1.6 W in 7 GHz RF signal, while a single-contact type switch was succeeded up to 2.4 W. These results were considered from the viewpoint of contact force and surface asperities according to the relation between input power and insertion loss.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"50 5 1","pages":"1990-1993 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89634126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497315
Y. Miyoshi, K. Mitsubayashi, T. Sawada, M. Ogawa, K. Otsuka, T. Takeuchi
An electric conductimetric sensor (thickness: 80 /spl mu/m) constructed in a sandwich configuration with a hydrophilic poly-tetrafluoroethylene membrane placed between two gold deposited layers was evaluated for use as a moisture sensor. The humidity level was measured by electrical conductivity of the device using the multifrequency LCR-meter at frequencies ranging from 100 Hz to 100 kHz, the device was calibrated at 100 Hz against the moisture air over the range of 30-85 % RH, which includes normal humidity level in the atmosphere and physiologic air such as breath and sweating. The response sensitivity of the conductimetric device was extremely high (i.e. less than 1 sec. for conductivity shift between humid air of 80 % RH and dried air of -60 /spl deg/C dew point) even for recovery to dried air. The sensor performance was reproducible over multiple measurements, showing the highly reproducibility with a coefficient of variation of 1.77 % (n = 5).
{"title":"Wearable humidity sensor with porous membrane by soft-MEMS techniques","authors":"Y. Miyoshi, K. Mitsubayashi, T. Sawada, M. Ogawa, K. Otsuka, T. Takeuchi","doi":"10.1109/SENSOR.2005.1497315","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497315","url":null,"abstract":"An electric conductimetric sensor (thickness: 80 /spl mu/m) constructed in a sandwich configuration with a hydrophilic poly-tetrafluoroethylene membrane placed between two gold deposited layers was evaluated for use as a moisture sensor. The humidity level was measured by electrical conductivity of the device using the multifrequency LCR-meter at frequencies ranging from 100 Hz to 100 kHz, the device was calibrated at 100 Hz against the moisture air over the range of 30-85 % RH, which includes normal humidity level in the atmosphere and physiologic air such as breath and sweating. The response sensitivity of the conductimetric device was extremely high (i.e. less than 1 sec. for conductivity shift between humid air of 80 % RH and dried air of -60 /spl deg/C dew point) even for recovery to dried air. The sensor performance was reproducible over multiple measurements, showing the highly reproducibility with a coefficient of variation of 1.77 % (n = 5).","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"40 1","pages":"1290-1291 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90098655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497451
E. Connolly, B. Timmer, H. Pham, J. Groeneweg, P. Sarro, W. Olthuis, P. French
Porous SiC has been found to be extremely sensitive to the presence of ammonia (NH/sub 3/) gas. We report the fabrication and preliminary characterisation of NH/sub 3/ sensors based on porous SiC and Al electrodes. The idea of the SiC is that it is a very durable material and that it should be good for sensors in harsh environments. Until now the only NH/sub 3/ sensors using SiC have been FET based, and the SiC was not porous. The SiC was deposited by PECVD on standard p-type single-crystal Si and was made porous by electrochemical etching in 73% HF and anodisation current-densities of 1-50 mA/cm/sup 2/. Because the etch-rate of Al in 73% HF is very low, we can use Al electrodes instead of Au. This also facilitates our sensor fabrication, as Al is more cleanroom friendly than Au. Preliminary data is given for our devices response to NH/sub 3/ in the range 0-10 ppm NH/sub 3/ in dry N/sub 2/ carrier gas.
{"title":"A new ammonia sensor based on a porous SiC membrane","authors":"E. Connolly, B. Timmer, H. Pham, J. Groeneweg, P. Sarro, W. Olthuis, P. French","doi":"10.1109/SENSOR.2005.1497451","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497451","url":null,"abstract":"Porous SiC has been found to be extremely sensitive to the presence of ammonia (NH/sub 3/) gas. We report the fabrication and preliminary characterisation of NH/sub 3/ sensors based on porous SiC and Al electrodes. The idea of the SiC is that it is a very durable material and that it should be good for sensors in harsh environments. Until now the only NH/sub 3/ sensors using SiC have been FET based, and the SiC was not porous. The SiC was deposited by PECVD on standard p-type single-crystal Si and was made porous by electrochemical etching in 73% HF and anodisation current-densities of 1-50 mA/cm/sup 2/. Because the etch-rate of Al in 73% HF is very low, we can use Al electrodes instead of Au. This also facilitates our sensor fabrication, as Al is more cleanroom friendly than Au. Preliminary data is given for our devices response to NH/sub 3/ in the range 0-10 ppm NH/sub 3/ in dry N/sub 2/ carrier gas.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"14 1","pages":"1832-1835 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90633905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496409
Satoshi Konishi, H. Nagae, T. Sagawa, K. Naka, K. Yoshioka
The paper deals with a pyrolyzed polymer as a kind of carbon material obtained by the pyrolysis of polymers. A pyrolysis process is executed by a heat treatment in the absence of O/sub 2/. Various polymer materials utilized in MEMS are potential precursors of pyrolyzed polymers. Micromachining of polymers has allowed various polymer MEMS structures. Polymer MEMS structures can be transformed into "pyrolyzed polymer MEMS" for various applications. This work focuses on the semiconductivity of a pyrolyzed polymer derived from popular polymer materials in MEMS. A measurement of the Hall effect provides information on the semiconductivity of pyrolyzed polymer. A diode is designed and demonstrated as the first step in the application of the semiconductive pyrolyzed polymer.
{"title":"Semiconductivity of pyrolyzed polymer for MEMS application","authors":"Satoshi Konishi, H. Nagae, T. Sagawa, K. Naka, K. Yoshioka","doi":"10.1109/SENSOR.2005.1496409","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496409","url":null,"abstract":"The paper deals with a pyrolyzed polymer as a kind of carbon material obtained by the pyrolysis of polymers. A pyrolysis process is executed by a heat treatment in the absence of O/sub 2/. Various polymer materials utilized in MEMS are potential precursors of pyrolyzed polymers. Micromachining of polymers has allowed various polymer MEMS structures. Polymer MEMS structures can be transformed into \"pyrolyzed polymer MEMS\" for various applications. This work focuses on the semiconductivity of a pyrolyzed polymer derived from popular polymer materials in MEMS. A measurement of the Hall effect provides information on the semiconductivity of pyrolyzed polymer. A diode is designed and demonstrated as the first step in the application of the semiconductive pyrolyzed polymer.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"2014 1","pages":"271-274 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73543334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497479
Jeong-Soo Lee, A. Chandrashekar, K. Parikh, K. Cattanach, S. K. Manohar, G. Lee, L. Overzet
The fabrication and the application of aligned multi-wall carbon nanotubes (MWNTs) grown on a four-probe patterned catalyst layer for the detection of chemical vapors are reported. The temperature resistance results show that the aligned MWNTs are semiconducting and follow the 3-dimensional hopping conduction mechanism. Effects of oxygen plasma on the characteristics of the MWNTs are also investigated. The four-probe MWNTs devices show resistance changes with exposure to gas vapors and that correlate with solvent polarity parameters. Those results suggest that our four-probe MWNTs devices are promising for chemical sensor applications.
{"title":"Multiwall carbon nanotubes grown on a four-probe patterned catalyst layer for chemical sensor applications","authors":"Jeong-Soo Lee, A. Chandrashekar, K. Parikh, K. Cattanach, S. K. Manohar, G. Lee, L. Overzet","doi":"10.1109/SENSOR.2005.1497479","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497479","url":null,"abstract":"The fabrication and the application of aligned multi-wall carbon nanotubes (MWNTs) grown on a four-probe patterned catalyst layer for the detection of chemical vapors are reported. The temperature resistance results show that the aligned MWNTs are semiconducting and follow the 3-dimensional hopping conduction mechanism. Effects of oxygen plasma on the characteristics of the MWNTs are also investigated. The four-probe MWNTs devices show resistance changes with exposure to gas vapors and that correlate with solvent polarity parameters. Those results suggest that our four-probe MWNTs devices are promising for chemical sensor applications.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"121 1","pages":"1943-1946 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76992262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496441
N. Dumas, L. Latorre, P. Nouet
This paper presents the design of a low-cost monolithic CMOS microcompass. The system is based on a cantilever actuated by the Lorenz force. Conditioning circuitry has been designed carefully to reject noise, to eliminate parasitic phenomena such as thermal effects, and to be robust to process scatterings without the need of an external trimming. Mixed-mode simulations have been enabled using a behavioral description of the sensor, and validations of the complete system have been performed. The expected performance has a resolution inferior to 1/spl deg/ for a total surface of 10.6mm/sup 2/ and a power consumption of 56mW (without the digital processing bloc).
{"title":"Design of a micromachined CMOS compass","authors":"N. Dumas, L. Latorre, P. Nouet","doi":"10.1109/SENSOR.2005.1496441","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496441","url":null,"abstract":"This paper presents the design of a low-cost monolithic CMOS microcompass. The system is based on a cantilever actuated by the Lorenz force. Conditioning circuitry has been designed carefully to reject noise, to eliminate parasitic phenomena such as thermal effects, and to be robust to process scatterings without the need of an external trimming. Mixed-mode simulations have been enabled using a behavioral description of the sensor, and validations of the complete system have been performed. The expected performance has a resolution inferior to 1/spl deg/ for a total surface of 10.6mm/sup 2/ and a power consumption of 56mW (without the digital processing bloc).","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"53 1","pages":"405-408 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78146345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497322
Sang Wook Lee, T. Yamamoto, Teruo Fujii
A novel /spl mu/-EIS (microelectrical impedance spectroscopy) device for label free analysis of DNA are developed and experimentally demonstrated. The feature of /spl mu/-EIS system is not only detecting DNA without any labelling, but also controlling the conformation that would enhance the EIS signal. The /spl mu/-EIS system is fully integrated with a microfluidic network made of polydimethylsiloxane (PDMS), a micromeasurement electrode and a micropump in order to conduct a semiautomated measurement controlled by an external PC system. The micro EIS system is capable of detecting the DNA concentration of a few nM in aqueous solution of a few pl in volume by virtue of the conformation enhanced impedance response. As a first demonstration of conformational change induced DNA analysis, the frequency and the electric field strength dependence of various length and concentrations of DNA were evaluated.
{"title":"Highly selective and sensitive DNA measurement by microelectrical impedance spectroscopy","authors":"Sang Wook Lee, T. Yamamoto, Teruo Fujii","doi":"10.1109/SENSOR.2005.1497322","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497322","url":null,"abstract":"A novel /spl mu/-EIS (microelectrical impedance spectroscopy) device for label free analysis of DNA are developed and experimentally demonstrated. The feature of /spl mu/-EIS system is not only detecting DNA without any labelling, but also controlling the conformation that would enhance the EIS signal. The /spl mu/-EIS system is fully integrated with a microfluidic network made of polydimethylsiloxane (PDMS), a micromeasurement electrode and a micropump in order to conduct a semiautomated measurement controlled by an external PC system. The micro EIS system is capable of detecting the DNA concentration of a few nM in aqueous solution of a few pl in volume by virtue of the conformation enhanced impedance response. As a first demonstration of conformational change induced DNA analysis, the frequency and the electric field strength dependence of various length and concentrations of DNA were evaluated.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"20 1","pages":"1314-1317 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78208725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497359
M. van den Boogaart, Maryna Lishchynska, L. Doeswijk, J. Greer, J. Brugger
We present a MEMS process to fabricate aperture independent stabilization of silicon nitride membranes to be used as miniature shadow masks or (nano) stencils. Large-area thin-film solid-state membranes were fabricated with silicon nitride corrugated support structures integrated into the stencil. These corrugated support structures are aimed to reduce the membrane deformation due to the deposition induced stress and thus to improve the dimensional control of the deposited patterns. We have performed physical vapor deposition (PVD) of Cr on unstabilized i.e. standard stencil membranes and stabilized stencil membranes. The structures were also modeled using commercial FEM tools. The simulation and experimental results confirm that introducing stabilization structures in the membrane can significantly reduce out-of-plane deformations of the membrane. The results of this study can be applied as a guideline for the design and fabrication of mechanically stable, complex stencil membranes.
{"title":"In-situ stabilization of membranes for improved large-area and high-density nanostencil lithography","authors":"M. van den Boogaart, Maryna Lishchynska, L. Doeswijk, J. Greer, J. Brugger","doi":"10.1109/SENSOR.2005.1497359","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497359","url":null,"abstract":"We present a MEMS process to fabricate aperture independent stabilization of silicon nitride membranes to be used as miniature shadow masks or (nano) stencils. Large-area thin-film solid-state membranes were fabricated with silicon nitride corrugated support structures integrated into the stencil. These corrugated support structures are aimed to reduce the membrane deformation due to the deposition induced stress and thus to improve the dimensional control of the deposited patterns. We have performed physical vapor deposition (PVD) of Cr on unstabilized i.e. standard stencil membranes and stabilized stencil membranes. The structures were also modeled using commercial FEM tools. The simulation and experimental results confirm that introducing stabilization structures in the membrane can significantly reduce out-of-plane deformations of the membrane. The results of this study can be applied as a guideline for the design and fabrication of mechanically stable, complex stencil membranes.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"26 1 1","pages":"1465-1468 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78556035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496564
L. Gonçalves, C. Couto, P. Alpuim, D. Rowe, J. Correia
The fabrication (using planar thin-film technology) of Bi/sub 2/Te/sub 3/ and Sb/sub 2/Te/sub 3/ microstructures, with high thermoelectric figure of merit, suitable for incorporation in Peltier elements and thermopiles, is reported. The microstructures were fabricated by co-evaporation of Bi and Te, for the n-type element, and Sb and Te, for the p-type element, on a 25 /spl mu/m-thick polyimide (Kapton) substrate. Kapton film is a flexible, robust substrate with a low thermal conductivity. While the plastic mechanical properties allow conformal coverage of surfaces with many different shapes without apparent damage of film or substrate, Kapton low conductivity ensures that the devices will not be thermally shorted through the substrate. High figures of merit are reported, sufficient to achieve more than 10/spl deg/C of cooling over a 1 mm/sup 2/ area.
{"title":"Thermoelectric microstructures of Bi/sub 2/Te/sub 3//Sb/sub 2/Te/sub 3/ for a self-calibrated micropyrometer [thermoelectric cooling]","authors":"L. Gonçalves, C. Couto, P. Alpuim, D. Rowe, J. Correia","doi":"10.1109/SENSOR.2005.1496564","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496564","url":null,"abstract":"The fabrication (using planar thin-film technology) of Bi/sub 2/Te/sub 3/ and Sb/sub 2/Te/sub 3/ microstructures, with high thermoelectric figure of merit, suitable for incorporation in Peltier elements and thermopiles, is reported. The microstructures were fabricated by co-evaporation of Bi and Te, for the n-type element, and Sb and Te, for the p-type element, on a 25 /spl mu/m-thick polyimide (Kapton) substrate. Kapton film is a flexible, robust substrate with a low thermal conductivity. While the plastic mechanical properties allow conformal coverage of surfaces with many different shapes without apparent damage of film or substrate, Kapton low conductivity ensures that the devices will not be thermally shorted through the substrate. High figures of merit are reported, sufficient to achieve more than 10/spl deg/C of cooling over a 1 mm/sup 2/ area.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"64 1","pages":"904-907 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78577226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496392
B. Chua, V. Logeeswaran, M. Chan, H. Park, D. Horsley, N. Tien
For the study of miniature ion propulsion engine and electric wind devices, we have developed an electrohydrodynamically (EHD) driven microfabricated actuator. It consumes a maximum power of 100 mW and has a maximum resultant driving force of 0.45 /spl mu/N in the first observed driving mode. The actuator consists of a mass/spring configuration fabricated with dual ion drives for propulsion. DC partial electrical discharge produces and accelerates the ions. Electric wind is generated by the momentum transfer from the ions to the air. Momentum is also transferred by virtue of the formation of intermittent space charge near the ionization zone. A selection between single and dual ion drives allows observation of various oscillation modes beginning at 896 Hz. The maximum out-of-plane oscillation amplitude measured was approximately 2 /spl mu/m.
{"title":"An electrohydrodynamically driven microfabricated actuator for the study of miniature ion propulsion engine and electric wind devices","authors":"B. Chua, V. Logeeswaran, M. Chan, H. Park, D. Horsley, N. Tien","doi":"10.1109/SENSOR.2005.1496392","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496392","url":null,"abstract":"For the study of miniature ion propulsion engine and electric wind devices, we have developed an electrohydrodynamically (EHD) driven microfabricated actuator. It consumes a maximum power of 100 mW and has a maximum resultant driving force of 0.45 /spl mu/N in the first observed driving mode. The actuator consists of a mass/spring configuration fabricated with dual ion drives for propulsion. DC partial electrical discharge produces and accelerates the ions. Electric wind is generated by the momentum transfer from the ions to the air. Momentum is also transferred by virtue of the formation of intermittent space charge near the ionization zone. A selection between single and dual ion drives allows observation of various oscillation modes beginning at 896 Hz. The maximum out-of-plane oscillation amplitude measured was approximately 2 /spl mu/m.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"12 1","pages":"197-200 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75034956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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