Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496414
V. Leonov, P. Fiorini, S. Sedky, T. Torfs, C. Hoof
Miniaturized and cost-effective thermoelectric generators (TEG) scavenging energy from environment could potentially provide power autonomy to consumer electronic products operating at low power. For example, TEG mounted in a wristwatch have been used to generate electricity from human heat. The key point of IMEC's research in this field is the realization of a body area network, consisting of a set of wireless sensors/actuators, able to provide health, sports, comfort, and safety monitoring functions to the user. The development of miniature energy scavengers built on MEMS technology is a primary goal of the ongoing research, as this will make the network truly power autonomous. In this paper, the modeling and a novel design of MEMS TEG especially conceived for human body applications are described. The design is built on the basis of a thermal model of the device, which includes the human body as one of its important elements. For this purpose, the research on human body thermal features is performed. The TEG prototype made with commercial thermopiles is tested with power conditioning electronics and a wireless module mounted on a watchstrap.
{"title":"Thermoelectric MEMS generators as a power supply for a body area network","authors":"V. Leonov, P. Fiorini, S. Sedky, T. Torfs, C. Hoof","doi":"10.1109/SENSOR.2005.1496414","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496414","url":null,"abstract":"Miniaturized and cost-effective thermoelectric generators (TEG) scavenging energy from environment could potentially provide power autonomy to consumer electronic products operating at low power. For example, TEG mounted in a wristwatch have been used to generate electricity from human heat. The key point of IMEC's research in this field is the realization of a body area network, consisting of a set of wireless sensors/actuators, able to provide health, sports, comfort, and safety monitoring functions to the user. The development of miniature energy scavengers built on MEMS technology is a primary goal of the ongoing research, as this will make the network truly power autonomous. In this paper, the modeling and a novel design of MEMS TEG especially conceived for human body applications are described. The design is built on the basis of a thermal model of the device, which includes the human body as one of its important elements. For this purpose, the research on human body thermal features is performed. The TEG prototype made with commercial thermopiles is tested with power conditioning electronics and a wireless module mounted on a watchstrap.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"52 1","pages":"291-294 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85043074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497470
S. Ajami, Y. Mortazavi, A. Khodadadi, F. Pourfayaz, S. Mohajerzadeh
In the present investigation, LaCoO/sub 3/ is used as an active filter for elimination of the sensor sensitivity to carbon monoxide and ethanol. A sol-gel procedure was used for the preparation of SnO/sub 2/ fine powder, which was impregnated with hexachloroplatinic acid to obtain 1.0 wt% Pt on SnO/sub 2/. The LaCoO/sub 3/ perovskite fine powder was prepared by citrate method, using nitrate precursors of La and Co, to act as active filter. The LaCoO/sub 3/ perovskite caused the sensitivity of the sensor to CO and ethanol declined significantly. It seems that the perovskite oxidizes CO and ethanol at temperatures lower than 250/spl deg/C whereas methane is not affected at temperature as high as 450/spl deg/C. This way the perovskite filter eliminates the sensor sensitivity to CO and ethanol, making the sensors highly selective to methane in presence of CO and ethanol in air.
{"title":"Highly selective sensor to CH/sub 4/ in presence of CO and ethanol using LaCoO/sub 3/ perovskite filter with Pt/SnO/sub 2/","authors":"S. Ajami, Y. Mortazavi, A. Khodadadi, F. Pourfayaz, S. Mohajerzadeh","doi":"10.1109/SENSOR.2005.1497470","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497470","url":null,"abstract":"In the present investigation, LaCoO/sub 3/ is used as an active filter for elimination of the sensor sensitivity to carbon monoxide and ethanol. A sol-gel procedure was used for the preparation of SnO/sub 2/ fine powder, which was impregnated with hexachloroplatinic acid to obtain 1.0 wt% Pt on SnO/sub 2/. The LaCoO/sub 3/ perovskite fine powder was prepared by citrate method, using nitrate precursors of La and Co, to act as active filter. The LaCoO/sub 3/ perovskite caused the sensitivity of the sensor to CO and ethanol declined significantly. It seems that the perovskite oxidizes CO and ethanol at temperatures lower than 250/spl deg/C whereas methane is not affected at temperature as high as 450/spl deg/C. This way the perovskite filter eliminates the sensor sensitivity to CO and ethanol, making the sensors highly selective to methane in presence of CO and ethanol in air.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"55 1","pages":"1907-1910 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85639117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496435
Y. Kikutani, K. Morishima, M. Tokeshi, J. Yamaguchi, T. Fukuzawa, A. Hattori, Y. Yoshida, M. Kitaoka, T. Kitamori
A flowing thermal lens microflow velocimeter, in which a photothermally produced local refractive index change (a thermal lens) was used as a tracer, was developed for microchemical chips made of glass. A laser pulse was focused with a microlens on a liquid flow inside a microchannel, and a thermal lens was produced. The thermal lens drifted downstream and was detected using another beam. The velocity was calculated from the time required for the thermal lens to travel between the two points. The microflow velocimeters enabled non-contact measurement with only slight disturbance to the microfluid possible and were suitable for microchemical systems.
{"title":"Application of flowing thermal lens to flow sensors for microchemical chips","authors":"Y. Kikutani, K. Morishima, M. Tokeshi, J. Yamaguchi, T. Fukuzawa, A. Hattori, Y. Yoshida, M. Kitaoka, T. Kitamori","doi":"10.1109/SENSOR.2005.1496435","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496435","url":null,"abstract":"A flowing thermal lens microflow velocimeter, in which a photothermally produced local refractive index change (a thermal lens) was used as a tracer, was developed for microchemical chips made of glass. A laser pulse was focused with a microlens on a liquid flow inside a microchannel, and a thermal lens was produced. The thermal lens drifted downstream and was detected using another beam. The velocity was calculated from the time required for the thermal lens to travel between the two points. The microflow velocimeters enabled non-contact measurement with only slight disturbance to the microfluid possible and were suitable for microchemical systems.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"9 1","pages":"380-383 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80838061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496642
D. McCormick, N. Tien, N. MacDonald, R. Matthews, A. Hibbs
Theoretical and experimental results of a design methodology and fabrication technology to realize ultrawide tuning range, electrostatic, silicon micromachined capacitors are presented. The varactors achieve a maximum tuning range of approximately 4000% and exhibit a linear tuning range of 1000% (C vs. V/sup 2/). The devices are also designed and characterized with Tera-ohm isolation and sub 30 fF capacitive coupling between the driving actuator and tuning element. In addition, parasitic capacitances have been minimized to less than 22 fF at the tuning element terminals.
介绍了实现超宽调谐范围的静电硅微机械电容器的设计方法和制造技术的理论和实验结果。该变容管的最大调谐范围约为4000%，线性调谐范围为1000% (C vs. V/sup 2/)。该器件还设计并具有太欧姆隔离和驱动致动器和调谐元件之间低于30ff的电容耦合。此外，调谐元件端子处的寄生电容已减至小于22ff。
{"title":"Ultra-wide tuning range silicon MEMS capacitors on glass with Tera-ohm isolation and low parasitics","authors":"D. McCormick, N. Tien, N. MacDonald, R. Matthews, A. Hibbs","doi":"10.1109/SENSOR.2005.1496642","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496642","url":null,"abstract":"Theoretical and experimental results of a design methodology and fabrication technology to realize ultrawide tuning range, electrostatic, silicon micromachined capacitors are presented. The varactors achieve a maximum tuning range of approximately 4000% and exhibit a linear tuning range of 1000% (C vs. V/sup 2/). The devices are also designed and characterized with Tera-ohm isolation and sub 30 fF capacitive coupling between the driving actuator and tuning element. In addition, parasitic capacitances have been minimized to less than 22 fF at the tuning element terminals.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"46 1","pages":"1075-1079 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81079480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496353
T. Fujimori, Y. Hanaoka, K. Fujisaki, N. Yokoyama, H. Fukuda
A surface micromachined capacitive pressure sensor was fabricated using conventional back-end of line (BEOL) processes in a standard CMOS fabrication line. The combination of standard interlayer dielectric and tungsten was used as sacrificial layers and electrodes, which achieves a large etching selectivity in sacrificial layer removal processes. Measured dependences of capacitance on applied pressure showed a good agreement with simulated results. Although the sensor used metal and amorphous layers in the moving parts (diaphragm), it showed excellent reliability. Sensor characteristics did not change after the deflection test for more than 50M times, temperature cycling test (-55 to 150 deg C, 500 cycles, JEDEC standard) and humidity test (85 deg C, 85% for 100 hr). The process enables us to monolithically integrate MEMS structures with the most advanced CMOS integrated circuits because they use only low temperature processes. Integrating MEMS with high performance digital circuits such as MPU as well as analog circuits enables ultra-tiny one-chip sensor devices.
{"title":"Fully CMOS compatible on-LSI capacitive pressure sensor fabricated using standard back-end-of-line processes","authors":"T. Fujimori, Y. Hanaoka, K. Fujisaki, N. Yokoyama, H. Fukuda","doi":"10.1109/SENSOR.2005.1496353","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496353","url":null,"abstract":"A surface micromachined capacitive pressure sensor was fabricated using conventional back-end of line (BEOL) processes in a standard CMOS fabrication line. The combination of standard interlayer dielectric and tungsten was used as sacrificial layers and electrodes, which achieves a large etching selectivity in sacrificial layer removal processes. Measured dependences of capacitance on applied pressure showed a good agreement with simulated results. Although the sensor used metal and amorphous layers in the moving parts (diaphragm), it showed excellent reliability. Sensor characteristics did not change after the deflection test for more than 50M times, temperature cycling test (-55 to 150 deg C, 500 cycles, JEDEC standard) and humidity test (85 deg C, 85% for 100 hr). The process enables us to monolithically integrate MEMS structures with the most advanced CMOS integrated circuits because they use only low temperature processes. Integrating MEMS with high performance digital circuits such as MPU as well as analog circuits enables ultra-tiny one-chip sensor devices.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"62 1","pages":"37-40 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84046606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497419
A. Han, E. Moss, A. Bruno Frazier
In this work, the micro electrophysiological analysis system (/spl mu/-EPAS) is used to study the ion channel activity of single cells. The /spl mu/-EPAS has been designed, fabricated, and characterized for this application. The whole cell analysis system has the capability to perform patch clamping, electrical impedance spectroscopy (EIS), and general extracellular recording using integrated, multi-electrode configurations within a single analysis cavity. Bovine chromaffin cells were used as the target cell to demonstrate and characterize the system. Whole cell impedance measurements were taken over a frequency range of 100 Hz to 5.0 MHz. The impedance signatures of bovine chromaffin cells with: i) the K/sup +/ channels blocked; ii) the Ca/sup 2+/ channels blocked; and iii) unmodified cells were measured and analyzed.
{"title":"Whole cell electrical impedance spectroscopy for studying ion channel activity","authors":"A. Han, E. Moss, A. Bruno Frazier","doi":"10.1109/SENSOR.2005.1497419","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497419","url":null,"abstract":"In this work, the micro electrophysiological analysis system (/spl mu/-EPAS) is used to study the ion channel activity of single cells. The /spl mu/-EPAS has been designed, fabricated, and characterized for this application. The whole cell analysis system has the capability to perform patch clamping, electrical impedance spectroscopy (EIS), and general extracellular recording using integrated, multi-electrode configurations within a single analysis cavity. Bovine chromaffin cells were used as the target cell to demonstrate and characterize the system. Whole cell impedance measurements were taken over a frequency range of 100 Hz to 5.0 MHz. The impedance signatures of bovine chromaffin cells with: i) the K/sup +/ channels blocked; ii) the Ca/sup 2+/ channels blocked; and iii) unmodified cells were measured and analyzed.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"51 1","pages":"1704-1707 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84151954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496635
O. Aharon, S. Feldman, Y. Nemirovsky
A DC to RF shunt contact micro-electro-mechanical switch was fabricated. The fabrication of the MEMS device was preformed using a bulk micromachining process on an SOI wafer followed by a vertical integration to a microwave circuit wafer. The pull-in voltage and natural frequency of the switch were characterized. Also, RF performances at both switch states were measured. The concept of the packaged switch described in this paper enables us to offer a-stand alone switch, independent of the RF circuit substrate material or technology being used.
{"title":"Vertically integrated silicon single crystalline MEMS switch","authors":"O. Aharon, S. Feldman, Y. Nemirovsky","doi":"10.1109/SENSOR.2005.1496635","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496635","url":null,"abstract":"A DC to RF shunt contact micro-electro-mechanical switch was fabricated. The fabrication of the MEMS device was preformed using a bulk micromachining process on an SOI wafer followed by a vertical integration to a microwave circuit wafer. The pull-in voltage and natural frequency of the switch were characterized. Also, RF performances at both switch states were measured. The concept of the packaged switch described in this paper enables us to offer a-stand alone switch, independent of the RF circuit substrate material or technology being used.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"62 1","pages":"1047-1050 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77806034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497353
K. Totsu, K. Fujishiro, S. Tanaka, M. Esashi
A fabrication process of precisely controlled three-dimensional patterns using a gray-scale lithography is presented. Multi-layered exposure patterns digitally generated by a mask-less exposure system are superposed on a photoresist-coated substrate layer by layer. Changing the exposure patterns and the exposure time of each exposure make the precise control of the profile of ultraviolet dose possible. The mask-less exposure system realizes fabrication of variable three-dimensional patterns at low cost with saving time. Photoresist patterns of spherical and aspherical microlens array of 100 /spl mu/m in each diameter are fabricated. The patterns are successfully transferred into silicon substrates with reactive ion etching.
{"title":"Gray-scale lithography using mask-less exposure system","authors":"K. Totsu, K. Fujishiro, S. Tanaka, M. Esashi","doi":"10.1109/SENSOR.2005.1497353","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497353","url":null,"abstract":"A fabrication process of precisely controlled three-dimensional patterns using a gray-scale lithography is presented. Multi-layered exposure patterns digitally generated by a mask-less exposure system are superposed on a photoresist-coated substrate layer by layer. Changing the exposure patterns and the exposure time of each exposure make the precise control of the profile of ultraviolet dose possible. The mask-less exposure system realizes fabrication of variable three-dimensional patterns at low cost with saving time. Photoresist patterns of spherical and aspherical microlens array of 100 /spl mu/m in each diameter are fabricated. The patterns are successfully transferred into silicon substrates with reactive ion etching.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"31 1","pages":"1441-1444 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78084722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1496437
X.M. Zhang, A. Liu, H. Cai, C. Lu, D. Tang
The paper reports an injection-locked laser (ILL) device constructed by MEMS technology to provide a wavelength-stabilized laser source for atomic watches. The device mainly consists of a MEMS tunable laser and a FP laser chip using a scheme of external injection. The combination of the injection locking and the MEMS technology brings about stabilized wavelength (< /spl plusmn/0.002 nm) at a small size (3 mm /spl times/ 2 mm /spl times/ 0.6 mm); both are crucial for atomic watches.
{"title":"MEMS injection-locked laser","authors":"X.M. Zhang, A. Liu, H. Cai, C. Lu, D. Tang","doi":"10.1109/SENSOR.2005.1496437","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1496437","url":null,"abstract":"The paper reports an injection-locked laser (ILL) device constructed by MEMS technology to provide a wavelength-stabilized laser source for atomic watches. The device mainly consists of a MEMS tunable laser and a FP laser chip using a scheme of external injection. The combination of the injection locking and the MEMS technology brings about stabilized wavelength (< /spl plusmn/0.002 nm) at a small size (3 mm /spl times/ 2 mm /spl times/ 0.6 mm); both are crucial for atomic watches.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"1 1","pages":"388-391 Vol. 1"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78190761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-05DOI: 10.1109/SENSOR.2005.1497426
Banglin Liu, Tsan-I Chen, Cheng-Hsien Liu
In this paper, we report the development of a dielectrophoresis cell separation chip and present the preliminary results. Both dielectrophoresis force and size filtering microstructure are incorporated in our microchip for the function of cell separation. By applying individual input voltage with different frequency on the different rows of the micro-tips, different particles could be separated in our device based on their size and electric property. An additional micro-structure design filter is also adopted in this chip to function as a multi-size filter to enhance the separation efficiency. Analysis, simulation, and experimental demonstration are reported in this paper to verify the functions of our separation chip.
{"title":"A cell separation chip using micro-structures filter and multi-frequencies dielectrophoresis","authors":"Banglin Liu, Tsan-I Chen, Cheng-Hsien Liu","doi":"10.1109/SENSOR.2005.1497426","DOIUrl":"https://doi.org/10.1109/SENSOR.2005.1497426","url":null,"abstract":"In this paper, we report the development of a dielectrophoresis cell separation chip and present the preliminary results. Both dielectrophoresis force and size filtering microstructure are incorporated in our microchip for the function of cell separation. By applying individual input voltage with different frequency on the different rows of the micro-tips, different particles could be separated in our device based on their size and electric property. An additional micro-structure design filter is also adopted in this chip to function as a multi-size filter to enhance the separation efficiency. Analysis, simulation, and experimental demonstration are reported in this paper to verify the functions of our separation chip.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"329 1","pages":"1733-1736 Vol. 2"},"PeriodicalIF":0.0,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73141795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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