Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28698
D. Torok, R. Gronseth
Flow and thermal fields in disk packs are analyzed. These flows are a subset of enclosed rotating cavity flows in which the disks are rotating with the same angular velocity and contained within a fixed cylindrical shroud. The axisymmetric model under consideration consists of a pair of corotating disks with mid-line symmetry. The corotating disks are assumed to be fully shrouded. Preliminary results of velocity and thermal fields in the gap between corotating disks for a 5.25-inch disk geometry drive are illustrated. The results have been obtained using the CFD code, FIDAP, running on a CDC 910 workstation.<>
{"title":"Flow and thermal fields in channels between corotating disks","authors":"D. Torok, R. Gronseth","doi":"10.1109/ITHERM.1988.28698","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28698","url":null,"abstract":"Flow and thermal fields in disk packs are analyzed. These flows are a subset of enclosed rotating cavity flows in which the disks are rotating with the same angular velocity and contained within a fixed cylindrical shroud. The axisymmetric model under consideration consists of a pair of corotating disks with mid-line symmetry. The corotating disks are assumed to be fully shrouded. Preliminary results of velocity and thermal fields in the gap between corotating disks for a 5.25-inch disk geometry drive are illustrated. The results have been obtained using the CFD code, FIDAP, running on a CDC 910 workstation.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124103712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28681
S. C. Yao, K. Su
A computer program has been established to evaluate the thermal performance of two-dimensional electronic boards with elements of unequal heights. Details of convective, conductive, and radiative heat transfer are considered. Experiments have been performed in a wind tunnel on a board of 70 elements arranged in 7 columns. Thermal infrared pictures at various flow conditions are taken. The computed results agree well with the experimental data. Some critical but unresolved questions regarding the heat transfer on the pins and at the back side of the board are also discussed.<>
{"title":"Thermal analysis of a two-dimensional electronic board","authors":"S. C. Yao, K. Su","doi":"10.1109/ITHERM.1988.28681","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28681","url":null,"abstract":"A computer program has been established to evaluate the thermal performance of two-dimensional electronic boards with elements of unequal heights. Details of convective, conductive, and radiative heat transfer are considered. Experiments have been performed in a wind tunnel on a board of 70 elements arranged in 7 columns. Thermal infrared pictures at various flow conditions are taken. The computed results agree well with the experimental data. Some critical but unresolved questions regarding the heat transfer on the pins and at the back side of the board are also discussed.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126101756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28675
G. Yuqin, W. Yajue
An experimental method for measuring packaging material characteristic parameters and the package thermal resistance including the contact resistance is discussed. The physical model based on one-dimensional analysis and the quasi-steady conduction process are developed. A continuous laser beam with uniform intensity is used as a heat source. The thermal diffusivity of beryllia ceramics and the package thermal resistance have been measured. The results can be applied to check the package manufacturing quality.<>
{"title":"An experimental study of thermal resistance of a power semiconductor package","authors":"G. Yuqin, W. Yajue","doi":"10.1109/ITHERM.1988.28675","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28675","url":null,"abstract":"An experimental method for measuring packaging material characteristic parameters and the package thermal resistance including the contact resistance is discussed. The physical model based on one-dimensional analysis and the quasi-steady conduction process are developed. A continuous laser beam with uniform intensity is used as a heat source. The thermal diffusivity of beryllia ceramics and the package thermal resistance have been measured. The results can be applied to check the package manufacturing quality.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114993000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28679
K. Mizuishi, T. Mori
Thermal stability is discussed of ball-limited-metal (BLM) layers formed under controlled-collapse solder (lead-5 wt.% tin) bumps for flip-chip interconnections. All BLM systems used here consist of a triple-layer deposit of Cr or Ti as an adhesive; Ni, Mo, Pd, or Pt as a barrier; and Au as a surface metal. Using test chips with these BLM systems, mechanical pull-strength values of solder-bump joints are obtained. These values are associated with thermal phenomena at the interface between the BLM and solder layers. The chips with Ti adhesive layers show generally superior solder-joint strength to those with Cr layers, independently of the barrier metal used. This is due to the presence of a joint fracture mode closely related to the kind of adhesive metal. Among the BLM systems examined, Ti/Ni/Au is found to provide the most reliable solder joints. This is successfully utilized as a BLM system for GaAs devices.<>
{"title":"Thermal stability of various ball-limited-metal systems under solder bumps","authors":"K. Mizuishi, T. Mori","doi":"10.1109/ITHERM.1988.28679","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28679","url":null,"abstract":"Thermal stability is discussed of ball-limited-metal (BLM) layers formed under controlled-collapse solder (lead-5 wt.% tin) bumps for flip-chip interconnections. All BLM systems used here consist of a triple-layer deposit of Cr or Ti as an adhesive; Ni, Mo, Pd, or Pt as a barrier; and Au as a surface metal. Using test chips with these BLM systems, mechanical pull-strength values of solder-bump joints are obtained. These values are associated with thermal phenomena at the interface between the BLM and solder layers. The chips with Ti adhesive layers show generally superior solder-joint strength to those with Cr layers, independently of the barrier metal used. This is due to the presence of a joint fracture mode closely related to the kind of adhesive metal. Among the BLM systems examined, Ti/Ni/Au is found to provide the most reliable solder joints. This is successfully utilized as a BLM system for GaAs devices.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132105589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28682
D. Agonafer, S. Furkay
Summary form only given. The three-dimensional conjugate heat transfer problem associated with a heat-dissipation electronic component placed in a forced-convection environment is discussed. Both numerical and experimental data are presented for forced-convection heat transfer over an individual, card-mounted electronic module. The numerical approach was twofold. First, the time-averaged equations depicting the turbulent flow field were integrated using a commercial finite-difference code (PHOENICS). The electronic package, in this case, was represented as a conducting solid. The resulting heat transfer coefficient data were used as boundary conditions for subsequent conduction analysis of the package which was in this case quite detailed with respect to internal material/geometry. The CAEDS program, a commercially available finite-element simulation system, was used to perform the conduction computations. Experimental data were acquired for individual components surface-mounted to small sections of epoxy circuit card. Component surface temperatures, air temperature, and chip temperature were measured and the results compared with simulations.<>
{"title":"Numerical and experimental investigation of heat transfer phenomena over an electronic module","authors":"D. Agonafer, S. Furkay","doi":"10.1109/ITHERM.1988.28682","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28682","url":null,"abstract":"Summary form only given. The three-dimensional conjugate heat transfer problem associated with a heat-dissipation electronic component placed in a forced-convection environment is discussed. Both numerical and experimental data are presented for forced-convection heat transfer over an individual, card-mounted electronic module. The numerical approach was twofold. First, the time-averaged equations depicting the turbulent flow field were integrated using a commercial finite-difference code (PHOENICS). The electronic package, in this case, was represented as a conducting solid. The resulting heat transfer coefficient data were used as boundary conditions for subsequent conduction analysis of the package which was in this case quite detailed with respect to internal material/geometry. The CAEDS program, a commercially available finite-element simulation system, was used to perform the conduction computations. Experimental data were acquired for individual components surface-mounted to small sections of epoxy circuit card. Component surface temperatures, air temperature, and chip temperature were measured and the results compared with simulations.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126372712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28668
B. Liew, N. Cheung, C. Hu
Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating on the electromigration lifetime of aluminum interconnects under pulse current stressing. A model has been developed to incorporate damage relaxation and self-heating effects on electromigration. It is shown that self-heating is expected to produce less than 20% error in typical accelerated testing conditions provided the peak current density (J/sub p/) is less than 4*10/sup 6/ A/cm/sup 2/. Design rules based on keeping the average current density (J/sub av/) constant are acceptable provided that duty factor is larger than 1% for all frequencies above 1 MHz.<>
{"title":"Effects of high current pulses on integrated circuit metallization reliability","authors":"B. Liew, N. Cheung, C. Hu","doi":"10.1109/ITHERM.1988.28668","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28668","url":null,"abstract":"Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating on the electromigration lifetime of aluminum interconnects under pulse current stressing. A model has been developed to incorporate damage relaxation and self-heating effects on electromigration. It is shown that self-heating is expected to produce less than 20% error in typical accelerated testing conditions provided the peak current density (J/sub p/) is less than 4*10/sup 6/ A/cm/sup 2/. Design rules based on keeping the average current density (J/sub av/) constant are acceptable provided that duty factor is larger than 1% for all frequencies above 1 MHz.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123100492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28702
S. Ostrach
Summary form only given, as follows. Some representative vapor, melt, and solution growth techniques are described and the essential transport phenomena for each is identified. Recent research to gain further understanding and a better description of transport phenomena in crystal growth is discussed. The problems of this type include: natural convection in shallow enclosures; mixed force and free convection; convection with heat flux in more than one direction; thermosolutal convection; and thermocapillary flows. The implications of this work to improved crystal quality is indicated.<>
{"title":"Transport phenomena in crystal growth","authors":"S. Ostrach","doi":"10.1109/ITHERM.1988.28702","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28702","url":null,"abstract":"Summary form only given, as follows. Some representative vapor, melt, and solution growth techniques are described and the essential transport phenomena for each is identified. Recent research to gain further understanding and a better description of transport phenomena in crystal growth is discussed. The problems of this type include: natural convection in shallow enclosures; mixed force and free convection; convection with heat flux in more than one direction; thermosolutal convection; and thermocapillary flows. The implications of this work to improved crystal quality is indicated.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"263 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124471030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28694
I. Sato, K. Otani, S. Oguchi, K. Hoshiya
Experimental results of heat transfer in helium-gas-enclosed disk enclosure (DE) are described. The following results were obtained. (1) The windage loss of a DE containing helium gas is about one fifth of that of a DE containing air. This effectively decreases DE temperature and disk runout. (2) The temperature increase of the positioner coil in helium gas is about one half of that in air. (3) Smaller windage loss and high conductivity minimize helium gas locational temperature dependence.<>
{"title":"Characteristics of heat transfer in helium gas enclosed disk enclosure","authors":"I. Sato, K. Otani, S. Oguchi, K. Hoshiya","doi":"10.1109/ITHERM.1988.28694","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28694","url":null,"abstract":"Experimental results of heat transfer in helium-gas-enclosed disk enclosure (DE) are described. The following results were obtained. (1) The windage loss of a DE containing helium gas is about one fifth of that of a DE containing air. This effectively decreases DE temperature and disk runout. (2) The temperature increase of the positioner coil in helium gas is about one half of that in air. (3) Smaller windage loss and high conductivity minimize helium gas locational temperature dependence.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121379430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28685
T. Lee, J. Saylor, T. Simon, W. Tong, P. Wu, A. Bar-Cohen
The governing equations for liquid and two-phase heat transfer are used to derive fluid figures-of-merit (FOMs) for liquid-forced and natural convection, boiling incipience, and critical heat flux in both pool and flow boiling modes. These FOMs are given to help evaluate and compare the thermal performance of several candidate immersion cooling fluids. In addition, the governing equations are used to determine the sensitivities of thermal performance to fluid property values.<>
{"title":"Fluid selection and property effects in single and two-phase immersion cooling (electronic components)","authors":"T. Lee, J. Saylor, T. Simon, W. Tong, P. Wu, A. Bar-Cohen","doi":"10.1109/ITHERM.1988.28685","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28685","url":null,"abstract":"The governing equations for liquid and two-phase heat transfer are used to derive fluid figures-of-merit (FOMs) for liquid-forced and natural convection, boiling incipience, and critical heat flux in both pool and flow boiling modes. These FOMs are given to help evaluate and compare the thermal performance of several candidate immersion cooling fluids. In addition, the governing equations are used to determine the sensitivities of thermal performance to fluid property values.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115963713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-05-11DOI: 10.1109/ITHERM.1988.28672
H. Jin, G. Gao
A novel measurement structure and method is presented by which one can measure the temperature of Al thin films during electromigration testing with high precision, better than previously attainable. At ambient temperature of 27 degrees C, experimental results show that the temperature and resistance variations of Al films can be considered as three stages. The first stage is the increasing process of the temperature and resistance of Al films (T/sub Al/ and R/sub Al/) due to Joule heating. The second stage is an electromigration process in which the T/sub Al/ and R/sub Al/ varied very slowly. The last is the catastrophic failure process in which the T/sub Al/ and R/sub Al/ increase rapidly until open circuit failure.<>
{"title":"Temperature measurement in Al films during electromigration test","authors":"H. Jin, G. Gao","doi":"10.1109/ITHERM.1988.28672","DOIUrl":"https://doi.org/10.1109/ITHERM.1988.28672","url":null,"abstract":"A novel measurement structure and method is presented by which one can measure the temperature of Al thin films during electromigration testing with high precision, better than previously attainable. At ambient temperature of 27 degrees C, experimental results show that the temperature and resistance variations of Al films can be considered as three stages. The first stage is the increasing process of the temperature and resistance of Al films (T/sub Al/ and R/sub Al/) due to Joule heating. The second stage is an electromigration process in which the T/sub Al/ and R/sub Al/ varied very slowly. The last is the catastrophic failure process in which the T/sub Al/ and R/sub Al/ increase rapidly until open circuit failure.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122343103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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