Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714661
K. Samanta
Emerging industrial applications, including 5G/beyond wireless devices, require high-power CW amplifiers with ultrawide bandwidth within a compact size and with high-performance reliability and repeatability. Moreover, for a wideband GaN HPA overcoming inherent limitations, withstanding high output mismatch and efficient thermal management raise many integration/packaging challenges. This paper provides the practical design, integration and packaging difficulties with industrial solutions, together with advanced packaging technologies, efficient selection of integration process, thermal interfacing and die-attach materials and heat spreaders. Finally, presents the development of compact high power GaN PAs with wider than decade bandwidth and CW P1dB power of more than 1 kW.
{"title":"Integration and Packaging of UWB GaN Power Amplifier for Advanced Industrial Applications","authors":"K. Samanta","doi":"10.1109/imarc49196.2021.9714661","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714661","url":null,"abstract":"Emerging industrial applications, including 5G/beyond wireless devices, require high-power CW amplifiers with ultrawide bandwidth within a compact size and with high-performance reliability and repeatability. Moreover, for a wideband GaN HPA overcoming inherent limitations, withstanding high output mismatch and efficient thermal management raise many integration/packaging challenges. This paper provides the practical design, integration and packaging difficulties with industrial solutions, together with advanced packaging technologies, efficient selection of integration process, thermal interfacing and die-attach materials and heat spreaders. Finally, presents the development of compact high power GaN PAs with wider than decade bandwidth and CW P1dB power of more than 1 kW.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115072150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714558
Anmol Nijhawan, Santanu Sinha, H. Singh, P. Kumar, A. Bhattacharya
Low Temperature Co-fired Ceramic (LTCC) is the technology of choice for miniaturization of RF space subsystems, especially because of its ability to integrate passive components. This paper presents considerations for the optimal design of embedded passive components, viz. inductors and capacitors in multi-layer LTCC technology. Design choices visà-vis available geometries and layer of use are weighed through 3-D full wave electromagnetic simulations and the most suitable candidates are identified. The findings are corroborated through the design and fabrication of a UHF band 10% bandwidth 1:4 lumped element Wilkinson Power Divider, for space use, using Space Applications Centre’s in-house LTCC foundry.
{"title":"Optimal design of embedded passive components for RF circuits in LTCC","authors":"Anmol Nijhawan, Santanu Sinha, H. Singh, P. Kumar, A. Bhattacharya","doi":"10.1109/imarc49196.2021.9714558","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714558","url":null,"abstract":"Low Temperature Co-fired Ceramic (LTCC) is the technology of choice for miniaturization of RF space subsystems, especially because of its ability to integrate passive components. This paper presents considerations for the optimal design of embedded passive components, viz. inductors and capacitors in multi-layer LTCC technology. Design choices visà-vis available geometries and layer of use are weighed through 3-D full wave electromagnetic simulations and the most suitable candidates are identified. The findings are corroborated through the design and fabrication of a UHF band 10% bandwidth 1:4 lumped element Wilkinson Power Divider, for space use, using Space Applications Centre’s in-house LTCC foundry.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132657709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714642
Vishal Kumar Chakradhary, Shubham Juneja, Rakesh Roshan, M. Akhtar
In this work, a novel cross polarization independent hexagonal ring shape FSS structure is developed to replace old truncated L shaped FSS structure integrated with CB nanocomposite sheet in the hybrid absorbers, proposed in our previous research work, to minimize the cross polar reflection coefficient (RC) [1]. The proposed novel hexagonal ring shape unit cell based FSS structure is combined with 10wt.% CB nanocomposite sheet. The resultant hybrid absorber attained wide absorption bandwidth of 4.1 GHz at 2.6 mm thickness with absorption value varying from 0.9 to 1 in the frequency range 8.88 to 12.98 GHz with negligible PCR value.
{"title":"Cross Polarization Minimization by Unit Cell Modification in the FSS Structure Integrated with Carbon Nanocomposite Absorber","authors":"Vishal Kumar Chakradhary, Shubham Juneja, Rakesh Roshan, M. Akhtar","doi":"10.1109/imarc49196.2021.9714642","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714642","url":null,"abstract":"In this work, a novel cross polarization independent hexagonal ring shape FSS structure is developed to replace old truncated L shaped FSS structure integrated with CB nanocomposite sheet in the hybrid absorbers, proposed in our previous research work, to minimize the cross polar reflection coefficient (RC) [1]. The proposed novel hexagonal ring shape unit cell based FSS structure is combined with 10wt.% CB nanocomposite sheet. The resultant hybrid absorber attained wide absorption bandwidth of 4.1 GHz at 2.6 mm thickness with absorption value varying from 0.9 to 1 in the frequency range 8.88 to 12.98 GHz with negligible PCR value.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130930187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714712
R. Anand, S. Maity
In this paper, a new approach of designing single layer Substrate Integrated waveguide (SIW) based planar leakywave antenna for X-band (8-12 GHz) application is presented. The beam scanning range of the final prototype is found to be $85^{circ}(-60^{circ}$ to $25^{circ})$. This design consists of a new type of unit cell, which is the combination of three transverse and three longitudinal rectangular slots. These slots are arranged periodically. The peliodic loading of these slots incorporates capacitive coupling, which is further responsible for a wide range of scanning. The designed antenna is showing a high impedance leakv-wave region. The most challenging task for a leaky-wave antenna is continuous beam scanning from the backward-to-forward with a broadside radiation patterns. In this paper, the designed LWA achieves this task with a significant reduction in side lobe level (SLL) and cross-polarization. The final prototype with directive beam and stable gain characteristic in the desired frequency band is designed. It is found from the radiation pattern that SLL for all the frequency is below -15 dB and cross polarization level of $-mathbf{1 8}$ dB. A thorough analysis of dispersion diagram of the unit cell and radiation characteristics using fundamental TE10 mode of SIW is conducted using a full-wave EM-simulator.
{"title":"Substrate Integrated Waveguide Based One Dimensional Leaky-Wave Antenna with Enhanced Scanning Range and Consistent Gain Characteristics","authors":"R. Anand, S. Maity","doi":"10.1109/imarc49196.2021.9714712","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714712","url":null,"abstract":"In this paper, a new approach of designing single layer Substrate Integrated waveguide (SIW) based planar leakywave antenna for X-band (8-12 GHz) application is presented. The beam scanning range of the final prototype is found to be $85^{circ}(-60^{circ}$ to $25^{circ})$. This design consists of a new type of unit cell, which is the combination of three transverse and three longitudinal rectangular slots. These slots are arranged periodically. The peliodic loading of these slots incorporates capacitive coupling, which is further responsible for a wide range of scanning. The designed antenna is showing a high impedance leakv-wave region. The most challenging task for a leaky-wave antenna is continuous beam scanning from the backward-to-forward with a broadside radiation patterns. In this paper, the designed LWA achieves this task with a significant reduction in side lobe level (SLL) and cross-polarization. The final prototype with directive beam and stable gain characteristic in the desired frequency band is designed. It is found from the radiation pattern that SLL for all the frequency is below -15 dB and cross polarization level of $-mathbf{1 8}$ dB. A thorough analysis of dispersion diagram of the unit cell and radiation characteristics using fundamental TE10 mode of SIW is conducted using a full-wave EM-simulator.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132126030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714569
S. K. Jain, Punam Pradeepkumar
This paper describes the design and implementation of a broadband (13% bandwidth) waveguide circulator at Ka band (29 GHz center frequency) for communication satellite payload. Design is based on three-port H-plane waveguide Yjunction circulator with a partial height ferrite posts in the junction region. RF and magnetic circuits simulation & optimization is performed using electromagnetic 3D CST software. Very low insertion loss of 0.13dB with better than 23dB return loss & Isolation has been achieved in the 27-31 GHz frequency band, measured performance are in close agleement with the simulation.
{"title":"Design of Broadband Waveguide Circulator at Ka-Band","authors":"S. K. Jain, Punam Pradeepkumar","doi":"10.1109/imarc49196.2021.9714569","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714569","url":null,"abstract":"This paper describes the design and implementation of a broadband (13% bandwidth) waveguide circulator at Ka band (29 GHz center frequency) for communication satellite payload. Design is based on three-port H-plane waveguide Yjunction circulator with a partial height ferrite posts in the junction region. RF and magnetic circuits simulation & optimization is performed using electromagnetic 3D CST software. Very low insertion loss of 0.13dB with better than 23dB return loss & Isolation has been achieved in the 27-31 GHz frequency band, measured performance are in close agleement with the simulation.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114664105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714535
Archana Kumari, S. Kalraiya, R. Chaudhary
A compact ultrathin wideband, wide incidence angle, nearly perfect metamaterial absorber has been proposed in this paper. The unit cell consists of a simple flower shaped resonator with a circular patch and four chip resistors. Under normal incidence, it has absorptivity greater than 90% from 5.55 GHz to 15.39 GHz. While, when the incidence angle is oblique it can achieve absorptivity greater than 80% up to 45° for both TE and TM mode waves. The unit cell electrical area and thickness are $0.22 lambda_{L} times 0.22 lambda_{L}$ and $0.11 lambda_{L}$ where, $lambda_{L}$ is the lowest absorption frequency wavelength. Input impedance and field distribution have been discussed to analyze the absorption mechanism.
{"title":"Wideband Ultra-Thin Polarization Insensitive Flower shaped Absorber","authors":"Archana Kumari, S. Kalraiya, R. Chaudhary","doi":"10.1109/imarc49196.2021.9714535","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714535","url":null,"abstract":"A compact ultrathin wideband, wide incidence angle, nearly perfect metamaterial absorber has been proposed in this paper. The unit cell consists of a simple flower shaped resonator with a circular patch and four chip resistors. Under normal incidence, it has absorptivity greater than 90% from 5.55 GHz to 15.39 GHz. While, when the incidence angle is oblique it can achieve absorptivity greater than 80% up to 45° for both TE and TM mode waves. The unit cell electrical area and thickness are $0.22 lambda_{L} times 0.22 lambda_{L}$ and $0.11 lambda_{L}$ where, $lambda_{L}$ is the lowest absorption frequency wavelength. Input impedance and field distribution have been discussed to analyze the absorption mechanism.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131984430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714665
Pranay Putrevu, D. Pandey, Tathagata Chakraborty
Ground Penetrating Radar (GPR) is an important instrument to characterize subsurface layers depending on their dielectric properties. GPR can efficiently detect and differentiate subsurface layers with significant dielectric contrast. However, in planetary subsurface, due to lack of water, dielectric contrast between the layers is very low, making the detection extremely challenging. In the present study, numerical simulations are carried out to determine the GPR signal levels in low dielectric contrast scenarios. Our results reveal that, noise-floor level of the GPR instrument should be at least 110dB below transmit power for successful detection in such cases. These results will be major input for GPR system design and configuration targeting planetary surface and subsurface studies for future missions.
{"title":"GPR Sensitivity Analysis for Detection of Subsurface Layers in Lunar Scenario","authors":"Pranay Putrevu, D. Pandey, Tathagata Chakraborty","doi":"10.1109/imarc49196.2021.9714665","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714665","url":null,"abstract":"Ground Penetrating Radar (GPR) is an important instrument to characterize subsurface layers depending on their dielectric properties. GPR can efficiently detect and differentiate subsurface layers with significant dielectric contrast. However, in planetary subsurface, due to lack of water, dielectric contrast between the layers is very low, making the detection extremely challenging. In the present study, numerical simulations are carried out to determine the GPR signal levels in low dielectric contrast scenarios. Our results reveal that, noise-floor level of the GPR instrument should be at least 110dB below transmit power for successful detection in such cases. These results will be major input for GPR system design and configuration targeting planetary surface and subsurface studies for future missions.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134062246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714609
Yunfan Peng, Liguo Sun
In this work, the periodic mushroom structures are loaded in the HMSIW. As a result, the size of SIW cut-mode cavity is reduced significantly; and a wide electromagnetic bandgap appears in a certain frequency band. Based on this structure, a compact HMSIW bandpass filter with broad upper stopband is designed. The filter centered at 6.92GHz exhibits an ultrawide upper stopband up to 37.72 GHz with a rejection level of 20 dB. The area of the filter is only $0.147lambda_{g}^{2}$, where $lambda_{g}$ is the guided wavelength at the center frequency in the dielectric. The theoretical analysis and design method are given in details in this paper:
{"title":"A Compact Bandpass Filter Based on HMSIW with Broad Upper Stopband","authors":"Yunfan Peng, Liguo Sun","doi":"10.1109/imarc49196.2021.9714609","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714609","url":null,"abstract":"In this work, the periodic mushroom structures are loaded in the HMSIW. As a result, the size of SIW cut-mode cavity is reduced significantly; and a wide electromagnetic bandgap appears in a certain frequency band. Based on this structure, a compact HMSIW bandpass filter with broad upper stopband is designed. The filter centered at 6.92GHz exhibits an ultrawide upper stopband up to 37.72 GHz with a rejection level of 20 dB. The area of the filter is only $0.147lambda_{g}^{2}$, where $lambda_{g}$ is the guided wavelength at the center frequency in the dielectric. The theoretical analysis and design method are given in details in this paper:","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122119518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714691
M. Bhavsar, Puja Srivastava, D. Singh, K. Parikh
This paper presents design, development and characterization of GaN based high power amplifier Monolithic Microwave Integrated Circuits (MMICs) at C-band and Ka-band. The MMICs are designed using GaN MMIC processes from UMS foundry. The C-band MMIC is designed using space evaluated $0.25mumathrm{m}$ Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) process and the Kaband MMIC is designed using $0.15mu$ m GaN HEMT process which is under space evaluation. On-wafer measurements of both the MIMICs were carried out. The C-band MIMIC exhibits output power, Power Added Efficiency (PAE) and Gain better than $ 43mathrm{dBm},$43% and 25dB respectively. At Ka-band output power, PAE and Gain better than $ 38mathrm{dBm},$ 30% and 18dB are achieved respectively. The MMICs are tested in test modules exhibiting similar performances. The paper also discusses about observed drain current runaway phenomena in GaN amplifiers due to gate leakage current. Importance of gate series resistor value selection is discussed to avoid this runaway and to prevent eventual burn-out of the chip transistor.
本文介绍了基于氮化镓的c波段和ka波段高功率放大器单片微波集成电路的设计、开发和特性。MMIC采用来自UMS铸造厂的GaN MMIC工艺设计。c波段MMIC采用空间评估的$0.25mumathrm{m}$氮化镓(GaN)高电子迁移率晶体管(HEMT)工艺设计,而Kaband MMIC采用空间评估的$0.15mu$ m GaN HEMT工艺设计。对这两种MIMICs进行了晶圆上测量。c波段MIMIC的输出功率、功率附加效率(PAE)和增益分别优于$43 mathm {dBm}、$43%和25dB。在ka波段输出功率下,PAE和增益分别优于$ 38math {dBm}、$ 30%和18dB。在测试模块中对mmic进行了测试,显示出相似的性能。本文还讨论了在GaN放大器中观察到的由于栅漏电流引起的漏极电流失控现象。讨论了栅极串联电阻值选择的重要性,以避免这种失控和防止芯片晶体管最终烧毁。
{"title":"Design and Measurement of GaN High Power Amplifier MMICs considering Gate Leakage Current","authors":"M. Bhavsar, Puja Srivastava, D. Singh, K. Parikh","doi":"10.1109/imarc49196.2021.9714691","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714691","url":null,"abstract":"This paper presents design, development and characterization of GaN based high power amplifier Monolithic Microwave Integrated Circuits (MMICs) at C-band and Ka-band. The MMICs are designed using GaN MMIC processes from UMS foundry. The C-band MMIC is designed using space evaluated $0.25mumathrm{m}$ Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) process and the Kaband MMIC is designed using $0.15mu$ m GaN HEMT process which is under space evaluation. On-wafer measurements of both the MIMICs were carried out. The C-band MIMIC exhibits output power, Power Added Efficiency (PAE) and Gain better than $ 43mathrm{dBm},$43% and 25dB respectively. At Ka-band output power, PAE and Gain better than $ 38mathrm{dBm},$ 30% and 18dB are achieved respectively. The MMICs are tested in test modules exhibiting similar performances. The paper also discusses about observed drain current runaway phenomena in GaN amplifiers due to gate leakage current. Importance of gate series resistor value selection is discussed to avoid this runaway and to prevent eventual burn-out of the chip transistor.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125982054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714568
L. Caramazza, P. Marracino, Cristina Schifaudo, M. Liberti, F. Apollonio
Molecular dynamics (MD) simulations give the chance to evaluate physical interactions in biological matter occurring at the atomistic level and in nanosecond or microsecond timescales. Due to the ongoing interest in using radiofrequency (RF) electromagnetic (EM) fields both for a wide range of biomedical applications and for the interaction mechanisms at the basis of health effects, a deep investigation on their effects to biological membrane is needed.In this work the response of a biological hydrated membrane to the application of RF EM fields was studied from an atomistic point of view, comparing the effects with the ones induced by a static field exposure.
{"title":"Response of Hydrated Lipid Bilayers to RF EM Fields: Molecular Dynamics Investigations","authors":"L. Caramazza, P. Marracino, Cristina Schifaudo, M. Liberti, F. Apollonio","doi":"10.1109/imarc49196.2021.9714568","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714568","url":null,"abstract":"Molecular dynamics (MD) simulations give the chance to evaluate physical interactions in biological matter occurring at the atomistic level and in nanosecond or microsecond timescales. Due to the ongoing interest in using radiofrequency (RF) electromagnetic (EM) fields both for a wide range of biomedical applications and for the interaction mechanisms at the basis of health effects, a deep investigation on their effects to biological membrane is needed.In this work the response of a biological hydrated membrane to the application of RF EM fields was studied from an atomistic point of view, comparing the effects with the ones induced by a static field exposure.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123809597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}