Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714624
Ashish Kumar, Bikash Chandra Sahoo, Gurmeet Singh, A. Singh
In this article, a multiband high gain frequency reconfigurable cascaded Sierpinski gasket fractal antenna (CSGFA) is proposed. The final iteration of the proposed design has been simulated on the high index silicon substrate with relative permittivity of 11.9 and height of ${mathrm {675}}mu{mathrm {m}}$ with the utilization of micro-machining mechanism. Finally, the proposed iteration of the design is made frequency reconfigurable with the incorporation of shunt capacitive micro-electro-mechanical switch (MEMS). The final design shows significant shift in the operating frequencies with acceptable gain around 10 dBi along with the compatibility of the design with monolithic microwave integrated circuits (MMICs).
{"title":"Design of Micro-Machined Frequency Reconfigurable Cascaded Sierpinski Gasket Fractal Antenna using RF-MEMS Switches","authors":"Ashish Kumar, Bikash Chandra Sahoo, Gurmeet Singh, A. Singh","doi":"10.1109/imarc49196.2021.9714624","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714624","url":null,"abstract":"In this article, a multiband high gain frequency reconfigurable cascaded Sierpinski gasket fractal antenna (CSGFA) is proposed. The final iteration of the proposed design has been simulated on the high index silicon substrate with relative permittivity of 11.9 and height of ${mathrm {675}}mu{mathrm {m}}$ with the utilization of micro-machining mechanism. Finally, the proposed iteration of the design is made frequency reconfigurable with the incorporation of shunt capacitive micro-electro-mechanical switch (MEMS). The final design shows significant shift in the operating frequencies with acceptable gain around 10 dBi along with the compatibility of the design with monolithic microwave integrated circuits (MMICs).","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121274529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/IMaRC49196.2021.9714641
Y. M. A. Latha, K. Rawat
This paper presents the design of a multi-octave power amplifier (PA) using extended class B to class J continuous mode. In a multi-octave PA, an overlapping exists between the higher harmonic frequencies of the lower octave and the fundamental frequency of the higher octave. Therefore, a PA mode with overlapping between fundamental and second harmonic impedances is suitable to design a multioctave PA. An extended class B to class J continuous mode consists of overlapping between fundamental and second harmonic impedances. However, the design of a multi-octave PA is not straightforward. The impedance selected in each octave is important to design a highly-efficiency multi-octave PA. Therefore, this paper presents a methodology to choose the appropriate load in each octave to design extended class B to class J continuous mode PA. This paper also presents a valid range of design variables for the transistor’s reliable operation. The proof of concept PA has been designed using 10 W Wolfspeed GaN HEMT CGH40010F. The designed PA operates from 0.75 to 2.75 GHz. The corresponding fractional bandwidth is 114.2%. The measured drain efficiency, power added efficiency, and output power are 60-73.6%, 53-67.8%, and 39.3-42.3 dBm, respectively. The measured carrier to third-order intermodulation distortion is better than -15 dBc when tested with a 20 MHz spacing two-tone signal.
本文介绍了一种采用扩展B级到J级连续模式的多倍频功率放大器的设计。在多倍频响中，低八度的高谐波频率与高八度的基频之间存在重叠。因此，基频和二次谐波阻抗重叠的PA模式适合设计多倍频的PA。扩展的B类到J类连续模式由基频和二次谐波阻抗之间的重叠组成。然而，多八度扩音的设计并不简单。每个倍频的阻抗选择对于设计高效的多倍频放大器至关重要。因此，本文提出了一种在每个八度内选择适当载荷的方法来设计扩展的B类到J类连续模态PA。本文还提出了晶体管可靠工作的有效设计变量范围。概念验证PA采用10 W Wolfspeed GaN HEMT CGH40010F设计。设计的PA工作在0.75到2.75 GHz之间。相应的分数带宽为114.2%。实测漏极效率为60 ~ 73.6%，功率增加效率为53 ~ 67.8%，输出功率为39.3 ~ 42.3 dBm。在间隔为20 MHz的双音信号下，测量到的载波到三阶互调失真优于-15 dBc。
{"title":"Methodology to Design Multi-Octave Power Amplifier Using Extended Class B to Class J Continuous Mode","authors":"Y. M. A. Latha, K. Rawat","doi":"10.1109/IMaRC49196.2021.9714641","DOIUrl":"https://doi.org/10.1109/IMaRC49196.2021.9714641","url":null,"abstract":"This paper presents the design of a multi-octave power amplifier (PA) using extended class B to class J continuous mode. In a multi-octave PA, an overlapping exists between the higher harmonic frequencies of the lower octave and the fundamental frequency of the higher octave. Therefore, a PA mode with overlapping between fundamental and second harmonic impedances is suitable to design a multioctave PA. An extended class B to class J continuous mode consists of overlapping between fundamental and second harmonic impedances. However, the design of a multi-octave PA is not straightforward. The impedance selected in each octave is important to design a highly-efficiency multi-octave PA. Therefore, this paper presents a methodology to choose the appropriate load in each octave to design extended class B to class J continuous mode PA. This paper also presents a valid range of design variables for the transistor’s reliable operation. The proof of concept PA has been designed using 10 W Wolfspeed GaN HEMT CGH40010F. The designed PA operates from 0.75 to 2.75 GHz. The corresponding fractional bandwidth is 114.2%. The measured drain efficiency, power added efficiency, and output power are 60-73.6%, 53-67.8%, and 39.3-42.3 dBm, respectively. The measured carrier to third-order intermodulation distortion is better than -15 dBc when tested with a 20 MHz spacing two-tone signal.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126629750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714595
K. Natarajan, S. Natarajamani, M. Jayakumar, M. Nirmala Devi, C. Shanmuga Velayutham, D. Siva Reddy
This paper presents a technique for performance optimization of microstrip bandpass filter based on a multiobjective differential evolutionary algorithm (MO-DEA). The sides of two magnetically coupled open-loop resonators are modeled using contour points and the points are randomly wiggled to alter the structure of the design. This structure has interesting effects on the S parameters of the bandpass filter. The random structure is optimized using the MO-DE algorithm and precisely defined fitness functions. Based on the proposed methodology, a bandpass filter for ${mathrm {2.4}}mathrm{GHz}$ is designed and its results are presented in this paper.
{"title":"Multi-objective Differential Evolutionary Algorithm based Microstrip Bandpass Filter Design using Wiggly Coupled Resonators","authors":"K. Natarajan, S. Natarajamani, M. Jayakumar, M. Nirmala Devi, C. Shanmuga Velayutham, D. Siva Reddy","doi":"10.1109/imarc49196.2021.9714595","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714595","url":null,"abstract":"This paper presents a technique for performance optimization of microstrip bandpass filter based on a multiobjective differential evolutionary algorithm (MO-DEA). The sides of two magnetically coupled open-loop resonators are modeled using contour points and the points are randomly wiggled to alter the structure of the design. This structure has interesting effects on the S parameters of the bandpass filter. The random structure is optimized using the MO-DE algorithm and precisely defined fitness functions. Based on the proposed methodology, a bandpass filter for ${mathrm {2.4}}mathrm{GHz}$ is designed and its results are presented in this paper.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124836231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714566
D. Choudhary, R. Chaudhary
This paper presents the design of compact filtering branch line coupler (BLC) with coupled transmission line (TL) for the Global System of Mobile Communications application. The presented BLC provides equal power split among output ports ± 1.0 dB imbalance of amplitude and phase variation from $145^{0}$ to $-125^{0}$ at an operating frequency of 0.83 GHz. It occupies $0.07 lambda_{0} times 0.06 lambda_{0}(26.0 mathrm{~mm} times 22.5 mathrm{~mm})$ at 0.83 GHz, provides 92 % compactness over the conventional design of branch line coupler at the identical operating frequency. It gives 10 dB fractional bandwidth of 38.5 %(0.67-0.99 GHz) with reflection coefficient 37.5 dB and isolation of 43.0 dB at operating frequency.
{"title":"Compact Design of Filtering Branch Line Coupler for GSM Frequencies Using Coupled TL","authors":"D. Choudhary, R. Chaudhary","doi":"10.1109/imarc49196.2021.9714566","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714566","url":null,"abstract":"This paper presents the design of compact filtering branch line coupler (BLC) with coupled transmission line (TL) for the Global System of Mobile Communications application. The presented BLC provides equal power split among output ports ± 1.0 dB imbalance of amplitude and phase variation from $145^{0}$ to $-125^{0}$ at an operating frequency of 0.83 GHz. It occupies $0.07 lambda_{0} times 0.06 lambda_{0}(26.0 mathrm{~mm} times 22.5 mathrm{~mm})$ at 0.83 GHz, provides 92 % compactness over the conventional design of branch line coupler at the identical operating frequency. It gives 10 dB fractional bandwidth of 38.5 %(0.67-0.99 GHz) with reflection coefficient 37.5 dB and isolation of 43.0 dB at operating frequency.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132183192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714711
Sriparna De, S. Koul, K. Samanta
A mechanical tuning technique is proposed to design two compact reconfigurable filters in SIW technology. Cylindrical dielectric rods are loaded at the cavities of the filters and their dielectric material is changed to show tunability in the center frequency of the filters. A reconfigurable SIW cavity resonator is designed first to study the effect of change in relative permittivity of rods. Based on that, a reconfigurable cross coupled filter, and a Half Mode SIW (HMSIW) iris window coupled band pass filter are designed using full wave EM simulation software. Then they are fabricated and experimentally verified with measarements. The preliminary experiment shows wide range of tunability with low insertion loss $(lt 2mathrm{~dB})$ and good return loss $gt 10 mathrm{dB}$) for all tunable cases.
{"title":"Miniaturized Reconfigurable Band Pass Filters","authors":"Sriparna De, S. Koul, K. Samanta","doi":"10.1109/imarc49196.2021.9714711","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714711","url":null,"abstract":"A mechanical tuning technique is proposed to design two compact reconfigurable filters in SIW technology. Cylindrical dielectric rods are loaded at the cavities of the filters and their dielectric material is changed to show tunability in the center frequency of the filters. A reconfigurable SIW cavity resonator is designed first to study the effect of change in relative permittivity of rods. Based on that, a reconfigurable cross coupled filter, and a Half Mode SIW (HMSIW) iris window coupled band pass filter are designed using full wave EM simulation software. Then they are fabricated and experimentally verified with measarements. The preliminary experiment shows wide range of tunability with low insertion loss $(lt 2mathrm{~dB})$ and good return loss $gt 10 mathrm{dB}$) for all tunable cases.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133400441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714605
T. Prakash, M. Ameen, R. Chaudhary, R. Gangwar
In this paper, a $2 times 3$ planar two-layer stacked symmetric array antenna has been studied. It consists of ±45° tilted square patch antenna. It is an eight-port antenna. Among all, 2 ports are fed with a phase difference $left(0^{circ}, pm 90^{circ} & 180^{circ}right)$ and remaining are $50 Omega$ matched terminated. It provides all possible polarizations e.g., linear (vertical & horizontal) and circular (right & left hand) polarization. Simultaneously, it offers frequency scanning at two frequency points, 5 GHz and 5.25 GHz, by implementing traveling wave technology. The crosspolarization in V-LP and H-LP is always below -40 dB and -20 dB, respectively. The simulated axial ratio in LHCP and RHCP have also achieved always below 3 dB in the desired frequency band.
{"title":"Quad-polarization Reconfigurable Frequency Scanning 2×3 Array Antenna for 5 GHz Band Application","authors":"T. Prakash, M. Ameen, R. Chaudhary, R. Gangwar","doi":"10.1109/imarc49196.2021.9714605","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714605","url":null,"abstract":"In this paper, a $2 times 3$ planar two-layer stacked symmetric array antenna has been studied. It consists of ±45° tilted square patch antenna. It is an eight-port antenna. Among all, 2 ports are fed with a phase difference $left(0^{circ}, pm 90^{circ} & 180^{circ}right)$ and remaining are $50 Omega$ matched terminated. It provides all possible polarizations e.g., linear (vertical & horizontal) and circular (right & left hand) polarization. Simultaneously, it offers frequency scanning at two frequency points, 5 GHz and 5.25 GHz, by implementing traveling wave technology. The crosspolarization in V-LP and H-LP is always below -40 dB and -20 dB, respectively. The simulated axial ratio in LHCP and RHCP have also achieved always below 3 dB in the desired frequency band.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131647096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714650
Ankur Prasad, M. Thorsell, H. Zirath, C. Fager
This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusions are drawn from the comparison of the extracted parameters of a Shockley- Read-Hall theory-based empirical trap model for devices with and without field-plates. The model separates the influence of the trap potential and the modulation of the drain-source current due to the trapped electrons. Lower trap potential is observed in the presence of a field-plate due to a lower number of trapped electrons. On the other hand, the trapped charges have a larger influence on the current in the field-plated devices. The extracted parameters, therefore, show a trade-off between reduced trap potential and increased influence on the current in the device with the added field-plate.
{"title":"Analyzing The Back-Gating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model","authors":"Ankur Prasad, M. Thorsell, H. Zirath, C. Fager","doi":"10.1109/imarc49196.2021.9714650","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714650","url":null,"abstract":"This paper investigates the influence of field-plates on the trapping effects in GaN HEMTs. Conclusions are drawn from the comparison of the extracted parameters of a Shockley- Read-Hall theory-based empirical trap model for devices with and without field-plates. The model separates the influence of the trap potential and the modulation of the drain-source current due to the trapped electrons. Lower trap potential is observed in the presence of a field-plate due to a lower number of trapped electrons. On the other hand, the trapped charges have a larger influence on the current in the field-plated devices. The extracted parameters, therefore, show a trade-off between reduced trap potential and increased influence on the current in the device with the added field-plate.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134235852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714647
Soumen Pandit, Vishakha Pandey, J. Mukherjee
This paper presents a novel dual-band negative-permittivity low-impedance metamaterial. The proposed metamaterial shows negative-permittivity properties in the frequency bands of 6.44 - 8.62 GHz and 11.72 - 17.23 GHz irrespective of the polarization-angle and a wide range of incident-angle of the imposed EM wave. This metamaterial can be used for gain enhancement of magnetic sources of EM radiation or magnetic dipole antennas.
{"title":"Polarization- and Incident-Angle Independent Negative-Permittivity Metamaterial","authors":"Soumen Pandit, Vishakha Pandey, J. Mukherjee","doi":"10.1109/imarc49196.2021.9714647","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714647","url":null,"abstract":"This paper presents a novel dual-band negative-permittivity low-impedance metamaterial. The proposed metamaterial shows negative-permittivity properties in the frequency bands of 6.44 - 8.62 GHz and 11.72 - 17.23 GHz irrespective of the polarization-angle and a wide range of incident-angle of the imposed EM wave. This metamaterial can be used for gain enhancement of magnetic sources of EM radiation or magnetic dipole antennas.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134357696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714615
G. R. Shalini, D. Krishna, Gs Karthikeya, S. Koul
This paper demonstrates a high gain 3D printed lens antenna at 28GHz for 5G applications. The lens is a hemispherical lens designed to improve the gain of a microstrip patch antenna. The design technique employed here is to chop the edges of the lens to realize a compact antenna. The proposed antenna is observed to provide a gain of 11.70 dBi at 28GHz.
{"title":"Design of 3D printed lens antenna for 5G applications","authors":"G. R. Shalini, D. Krishna, Gs Karthikeya, S. Koul","doi":"10.1109/imarc49196.2021.9714615","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714615","url":null,"abstract":"This paper demonstrates a high gain 3D printed lens antenna at 28GHz for 5G applications. The lens is a hemispherical lens designed to improve the gain of a microstrip patch antenna. The design technique employed here is to chop the edges of the lens to realize a compact antenna. The proposed antenna is observed to provide a gain of 11.70 dBi at 28GHz.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133297603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714603
A. Banerjee, Shubhadip Paul, M. J. Akhtar
RF sources required for exciting RF planar sensors are usually supplied through VNA which makes the detection procedure very cumbersome and introduces limitations in portability. In this paper, a wireless sensing system is proposed in which a RF planar sensor at 2.45 GHz is excited with the help of a Voltage Controlled Oscillator(VCO) designed in the range of 2.1GHz to 2.46 GHz having maximum power output of 1.7dBm at 2.4 GHz. The VCO prototype is designed in Altium software and fabricated on FR4 substrate using IC HMC385 LP4 and connected with a pair of transmitting and receiving broadband standard RF antenna arrangement in the frequency range 2.1-3.1GHz. The modified CSRR structure is designed on Taconic substrate with a fractional sensitivity of 8.16 % with a Q of 123. The VCO model, sensor, antenna and Spectrum Analyzer integration is carried out in ADS together to demonstrate the proposed prototype. The integrated antenna system is then simulated in small distances and the change in sensitivity and quality factor is reported. An equivalent structure for the sensor structure is modelled in ADS and its lumped elements are optimized. Finally, the detection is determined by using a Spectrum analyzer modelling and noting the power level of the harmonics undergoing a shift due to the loading of the sample.
{"title":"Wireless CSRR based sensing system for Sensitivity Evaluation of Dielectric Materials in Nearfield ISM-Band","authors":"A. Banerjee, Shubhadip Paul, M. J. Akhtar","doi":"10.1109/imarc49196.2021.9714603","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714603","url":null,"abstract":"RF sources required for exciting RF planar sensors are usually supplied through VNA which makes the detection procedure very cumbersome and introduces limitations in portability. In this paper, a wireless sensing system is proposed in which a RF planar sensor at 2.45 GHz is excited with the help of a Voltage Controlled Oscillator(VCO) designed in the range of 2.1GHz to 2.46 GHz having maximum power output of 1.7dBm at 2.4 GHz. The VCO prototype is designed in Altium software and fabricated on FR4 substrate using IC HMC385 LP4 and connected with a pair of transmitting and receiving broadband standard RF antenna arrangement in the frequency range 2.1-3.1GHz. The modified CSRR structure is designed on Taconic substrate with a fractional sensitivity of 8.16 % with a Q of 123. The VCO model, sensor, antenna and Spectrum Analyzer integration is carried out in ADS together to demonstrate the proposed prototype. The integrated antenna system is then simulated in small distances and the change in sensitivity and quality factor is reported. An equivalent structure for the sensor structure is modelled in ADS and its lumped elements are optimized. Finally, the detection is determined by using a Spectrum analyzer modelling and noting the power level of the harmonics undergoing a shift due to the loading of the sample.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126180018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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