Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714629
D. Kumar, Kamaljeet Singh, Kumar Sangam, A. V. Nirmal
Microstrip realization of CW-based high-power amplifier at X-band is demonstrated using standard techniques. Gallium nitride devices are employed for high power application in the output chain. The present article demonstrates realization of a 25W power amplifier with the minimal number of active devices. Microstrip implementation and simple topology shows the effectiveness of the adopted methodology in achieving high power and efficiency. Further, the developed topology is integrated with the data transmitter and characterized for various parameters including EVM. This article details the various methodologies, microstrip realization, characterization and thermal study.
{"title":"Realization of compact Continuous Wave-based X-Band Power Amplifier using GaN device for Data Transmitter Applications","authors":"D. Kumar, Kamaljeet Singh, Kumar Sangam, A. V. Nirmal","doi":"10.1109/imarc49196.2021.9714629","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714629","url":null,"abstract":"Microstrip realization of CW-based high-power amplifier at X-band is demonstrated using standard techniques. Gallium nitride devices are employed for high power application in the output chain. The present article demonstrates realization of a 25W power amplifier with the minimal number of active devices. Microstrip implementation and simple topology shows the effectiveness of the adopted methodology in achieving high power and efficiency. Further, the developed topology is integrated with the data transmitter and characterized for various parameters including EVM. This article details the various methodologies, microstrip realization, characterization and thermal study.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132326211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714617
A. Bhattacharya, Shrija Bhattacharyya, Mahendra P. S. Bhadoria, Latheef A. Shaik, Harshita Tolani, P. Chakraborty, R. Jyoti
This paper presents the design and realization of narrow-band channel selection filter, required for mm-wave ground based sounding applications. The selection of channel frequency is mainly ascertained in order to facilitate the atmospheric vertical sounding upto an altitude of 10km. In order to accommodate above absorption bands, 3 identical IF backend channels (at 4.9GHz) are designed. Hence, one band pass filter (BPF) is proposed and fabricated using 25 mil alumina substrate which provides 344MHz noise equivalent bandwidth. Finally, the BPF is integrated with harmonic reject filter (HRF) in order to meet wider rejection band up to 20GHz.
{"title":"Design and Realization of Channel Selection Filter for mm-Wave Atmospheric Sounding Application","authors":"A. Bhattacharya, Shrija Bhattacharyya, Mahendra P. S. Bhadoria, Latheef A. Shaik, Harshita Tolani, P. Chakraborty, R. Jyoti","doi":"10.1109/imarc49196.2021.9714617","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714617","url":null,"abstract":"This paper presents the design and realization of narrow-band channel selection filter, required for mm-wave ground based sounding applications. The selection of channel frequency is mainly ascertained in order to facilitate the atmospheric vertical sounding upto an altitude of 10km. In order to accommodate above absorption bands, 3 identical IF backend channels (at 4.9GHz) are designed. Hence, one band pass filter (BPF) is proposed and fabricated using 25 mil alumina substrate which provides 344MHz noise equivalent bandwidth. Finally, the BPF is integrated with harmonic reject filter (HRF) in order to meet wider rejection band up to 20GHz.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129517816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714587
Alex Raterink, Ali Farshkaran, E. Porter
Microwave imaging could provide a low-cost, easy, and non-invasive method of detecting the state of the human bladder. However, current work on bladder detection uses relatively simple models. This paper presents a complex surface model of the human torso, based on the AustinMan model, to be used in broadband simulations. Model preparation is discussed, including the selection of dielectric properties of the tissues, bladder shape construction, and necessary simplifications to facilitate simulation of the model. Simulation results suggest that differences in the dielectric properties and volume of the urine are detectable through changes in the S11 parameter of the antenna.
{"title":"Microwave Reflection-based Bladder State Discrimination with Realistic Pelvic Models: Impact of Urine Conductivity and Volume","authors":"Alex Raterink, Ali Farshkaran, E. Porter","doi":"10.1109/imarc49196.2021.9714587","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714587","url":null,"abstract":"Microwave imaging could provide a low-cost, easy, and non-invasive method of detecting the state of the human bladder. However, current work on bladder detection uses relatively simple models. This paper presents a complex surface model of the human torso, based on the AustinMan model, to be used in broadband simulations. Model preparation is discussed, including the selection of dielectric properties of the tissues, bladder shape construction, and necessary simplifications to facilitate simulation of the model. Simulation results suggest that differences in the dielectric properties and volume of the urine are detectable through changes in the S11 parameter of the antenna.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130051772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714616
Koki Sekine, Toyoyuki Hagiwara, K. Takano, S. Hara, A. Kasamatsu, Y. Umeda
In recent years, as communication speeds increase, the 300-GHz band has been attracting attention for its wide bandwidth. To realize transmitter in such a region, research has been conducted on up-conversion mixers operating at the 300-GHz band. The problem with conventional mixers is that they can’t separate the LO and IF signal ports, and even if they could, harmonics would be generated near the RF band. In this work, we propose an up-conversion mixer with separate LO and IF ports and harmonic suppression. Using a 40-nm CMOS process, we realize the up-conversion mixer with a bandwidth of 19 GHz and a maximum output power of -42.69 dBm. If the LO signal of 5 dBm is input, the output power of approximately -20 dBm can be obtained.
{"title":"A 300 GHz Band Fundamental Up-Conversion Mixer Using 40 nm CMOS Technology","authors":"Koki Sekine, Toyoyuki Hagiwara, K. Takano, S. Hara, A. Kasamatsu, Y. Umeda","doi":"10.1109/imarc49196.2021.9714616","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714616","url":null,"abstract":"In recent years, as communication speeds increase, the 300-GHz band has been attracting attention for its wide bandwidth. To realize transmitter in such a region, research has been conducted on up-conversion mixers operating at the 300-GHz band. The problem with conventional mixers is that they can’t separate the LO and IF signal ports, and even if they could, harmonics would be generated near the RF band. In this work, we propose an up-conversion mixer with separate LO and IF ports and harmonic suppression. Using a 40-nm CMOS process, we realize the up-conversion mixer with a bandwidth of 19 GHz and a maximum output power of -42.69 dBm. If the LO signal of 5 dBm is input, the output power of approximately -20 dBm can be obtained.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132154125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714690
Krutika Nerurkar, Pranita V Mane, Tapas K. Bhuiya, Vishal G. Padwal, R. Harsh
MRI Scanner is widely used diagnostic tool, used in the diagnosis of diseases and results non-invasive way of imaging. This imaging technique is based on NMR imaging. The MRI system has multiple complex subsystems. The subsystems implemented are RF power amplifier, Coils, Couch, Gradient and, Magnet. This paper focuses on the development of 1 kW RF power amplifier system for 63.87 MHz at 1.5 T, with a feedback control mechanism to ensure the critical parameters of amplifier are operated within safety limit to avoid any damage. To monitor and control these parameters Graphical User Interface has been developed in LabView.
{"title":"RF Exciter Control System For Head Imaging In 1.5t MRI","authors":"Krutika Nerurkar, Pranita V Mane, Tapas K. Bhuiya, Vishal G. Padwal, R. Harsh","doi":"10.1109/imarc49196.2021.9714690","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714690","url":null,"abstract":"MRI Scanner is widely used diagnostic tool, used in the diagnosis of diseases and results non-invasive way of imaging. This imaging technique is based on NMR imaging. The MRI system has multiple complex subsystems. The subsystems implemented are RF power amplifier, Coils, Couch, Gradient and, Magnet. This paper focuses on the development of 1 kW RF power amplifier system for 63.87 MHz at 1.5 T, with a feedback control mechanism to ensure the critical parameters of amplifier are operated within safety limit to avoid any damage. To monitor and control these parameters Graphical User Interface has been developed in LabView.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122221920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714595
K. Natarajan, S. Natarajamani, M. Jayakumar, M. Nirmala Devi, C. Shanmuga Velayutham, D. Siva Reddy
This paper presents a technique for performance optimization of microstrip bandpass filter based on a multiobjective differential evolutionary algorithm (MO-DEA). The sides of two magnetically coupled open-loop resonators are modeled using contour points and the points are randomly wiggled to alter the structure of the design. This structure has interesting effects on the S parameters of the bandpass filter. The random structure is optimized using the MO-DE algorithm and precisely defined fitness functions. Based on the proposed methodology, a bandpass filter for ${mathrm {2.4}}mathrm{GHz}$ is designed and its results are presented in this paper.
{"title":"Multi-objective Differential Evolutionary Algorithm based Microstrip Bandpass Filter Design using Wiggly Coupled Resonators","authors":"K. Natarajan, S. Natarajamani, M. Jayakumar, M. Nirmala Devi, C. Shanmuga Velayutham, D. Siva Reddy","doi":"10.1109/imarc49196.2021.9714595","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714595","url":null,"abstract":"This paper presents a technique for performance optimization of microstrip bandpass filter based on a multiobjective differential evolutionary algorithm (MO-DEA). The sides of two magnetically coupled open-loop resonators are modeled using contour points and the points are randomly wiggled to alter the structure of the design. This structure has interesting effects on the S parameters of the bandpass filter. The random structure is optimized using the MO-DE algorithm and precisely defined fitness functions. Based on the proposed methodology, a bandpass filter for ${mathrm {2.4}}mathrm{GHz}$ is designed and its results are presented in this paper.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124836231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714602
Aditi Sharma, Saptarshi Ghosh, K. V. Srivastava
In this paper, a dual-polarized active switchable frequency selective structure loaded with PIN diodes has been designed. The proposed geometry switches the working states between a rasorber and an absorber during OFF and ON states of the diode, respectively. The topology is double-layered; the top lossy layer is made of a swastika-shaped cross-dipole geometry with embedded lumped resistors, whereas the bottom layer has a slot geometry loaded with PIN diodes. These diodes are soldered across the slot to exhibit the switching property. During absorption mode, a wide bandwidth having absorptivity above 90% is achieved for the range 4.39 GHz to 13.16 GHz. During the rasorber mode, the absorption bandwidth remains almost constant, whereas an additional transmission peak appears at 12.78 GHz. The proposed design is also made compact, with the unit cell dimensions $0.145 lambda_{L} times 0.145 lambda_{L}$, where $lambda_{L}$ designates the operating wavelength at the lowest absorption frequency (4.39 GHz).
{"title":"A Dual-Polarized Broadband Switchable Frequency Selective Rasorber/ Absorber","authors":"Aditi Sharma, Saptarshi Ghosh, K. V. Srivastava","doi":"10.1109/imarc49196.2021.9714602","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714602","url":null,"abstract":"In this paper, a dual-polarized active switchable frequency selective structure loaded with PIN diodes has been designed. The proposed geometry switches the working states between a rasorber and an absorber during OFF and ON states of the diode, respectively. The topology is double-layered; the top lossy layer is made of a swastika-shaped cross-dipole geometry with embedded lumped resistors, whereas the bottom layer has a slot geometry loaded with PIN diodes. These diodes are soldered across the slot to exhibit the switching property. During absorption mode, a wide bandwidth having absorptivity above 90% is achieved for the range 4.39 GHz to 13.16 GHz. During the rasorber mode, the absorption bandwidth remains almost constant, whereas an additional transmission peak appears at 12.78 GHz. The proposed design is also made compact, with the unit cell dimensions $0.145 lambda_{L} times 0.145 lambda_{L}$, where $lambda_{L}$ designates the operating wavelength at the lowest absorption frequency (4.39 GHz).","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121170866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714624
Ashish Kumar, Bikash Chandra Sahoo, Gurmeet Singh, A. Singh
In this article, a multiband high gain frequency reconfigurable cascaded Sierpinski gasket fractal antenna (CSGFA) is proposed. The final iteration of the proposed design has been simulated on the high index silicon substrate with relative permittivity of 11.9 and height of ${mathrm {675}}mu{mathrm {m}}$ with the utilization of micro-machining mechanism. Finally, the proposed iteration of the design is made frequency reconfigurable with the incorporation of shunt capacitive micro-electro-mechanical switch (MEMS). The final design shows significant shift in the operating frequencies with acceptable gain around 10 dBi along with the compatibility of the design with monolithic microwave integrated circuits (MMICs).
{"title":"Design of Micro-Machined Frequency Reconfigurable Cascaded Sierpinski Gasket Fractal Antenna using RF-MEMS Switches","authors":"Ashish Kumar, Bikash Chandra Sahoo, Gurmeet Singh, A. Singh","doi":"10.1109/imarc49196.2021.9714624","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714624","url":null,"abstract":"In this article, a multiband high gain frequency reconfigurable cascaded Sierpinski gasket fractal antenna (CSGFA) is proposed. The final iteration of the proposed design has been simulated on the high index silicon substrate with relative permittivity of 11.9 and height of ${mathrm {675}}mu{mathrm {m}}$ with the utilization of micro-machining mechanism. Finally, the proposed iteration of the design is made frequency reconfigurable with the incorporation of shunt capacitive micro-electro-mechanical switch (MEMS). The final design shows significant shift in the operating frequencies with acceptable gain around 10 dBi along with the compatibility of the design with monolithic microwave integrated circuits (MMICs).","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121274529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714603
A. Banerjee, Shubhadip Paul, M. J. Akhtar
RF sources required for exciting RF planar sensors are usually supplied through VNA which makes the detection procedure very cumbersome and introduces limitations in portability. In this paper, a wireless sensing system is proposed in which a RF planar sensor at 2.45 GHz is excited with the help of a Voltage Controlled Oscillator(VCO) designed in the range of 2.1GHz to 2.46 GHz having maximum power output of 1.7dBm at 2.4 GHz. The VCO prototype is designed in Altium software and fabricated on FR4 substrate using IC HMC385 LP4 and connected with a pair of transmitting and receiving broadband standard RF antenna arrangement in the frequency range 2.1-3.1GHz. The modified CSRR structure is designed on Taconic substrate with a fractional sensitivity of 8.16 % with a Q of 123. The VCO model, sensor, antenna and Spectrum Analyzer integration is carried out in ADS together to demonstrate the proposed prototype. The integrated antenna system is then simulated in small distances and the change in sensitivity and quality factor is reported. An equivalent structure for the sensor structure is modelled in ADS and its lumped elements are optimized. Finally, the detection is determined by using a Spectrum analyzer modelling and noting the power level of the harmonics undergoing a shift due to the loading of the sample.
{"title":"Wireless CSRR based sensing system for Sensitivity Evaluation of Dielectric Materials in Nearfield ISM-Band","authors":"A. Banerjee, Shubhadip Paul, M. J. Akhtar","doi":"10.1109/imarc49196.2021.9714603","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714603","url":null,"abstract":"RF sources required for exciting RF planar sensors are usually supplied through VNA which makes the detection procedure very cumbersome and introduces limitations in portability. In this paper, a wireless sensing system is proposed in which a RF planar sensor at 2.45 GHz is excited with the help of a Voltage Controlled Oscillator(VCO) designed in the range of 2.1GHz to 2.46 GHz having maximum power output of 1.7dBm at 2.4 GHz. The VCO prototype is designed in Altium software and fabricated on FR4 substrate using IC HMC385 LP4 and connected with a pair of transmitting and receiving broadband standard RF antenna arrangement in the frequency range 2.1-3.1GHz. The modified CSRR structure is designed on Taconic substrate with a fractional sensitivity of 8.16 % with a Q of 123. The VCO model, sensor, antenna and Spectrum Analyzer integration is carried out in ADS together to demonstrate the proposed prototype. The integrated antenna system is then simulated in small distances and the change in sensitivity and quality factor is reported. An equivalent structure for the sensor structure is modelled in ADS and its lumped elements are optimized. Finally, the detection is determined by using a Spectrum analyzer modelling and noting the power level of the harmonics undergoing a shift due to the loading of the sample.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126180018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/IMaRC49196.2021.9714641
Y. M. A. Latha, K. Rawat
This paper presents the design of a multi-octave power amplifier (PA) using extended class B to class J continuous mode. In a multi-octave PA, an overlapping exists between the higher harmonic frequencies of the lower octave and the fundamental frequency of the higher octave. Therefore, a PA mode with overlapping between fundamental and second harmonic impedances is suitable to design a multioctave PA. An extended class B to class J continuous mode consists of overlapping between fundamental and second harmonic impedances. However, the design of a multi-octave PA is not straightforward. The impedance selected in each octave is important to design a highly-efficiency multi-octave PA. Therefore, this paper presents a methodology to choose the appropriate load in each octave to design extended class B to class J continuous mode PA. This paper also presents a valid range of design variables for the transistor’s reliable operation. The proof of concept PA has been designed using 10 W Wolfspeed GaN HEMT CGH40010F. The designed PA operates from 0.75 to 2.75 GHz. The corresponding fractional bandwidth is 114.2%. The measured drain efficiency, power added efficiency, and output power are 60-73.6%, 53-67.8%, and 39.3-42.3 dBm, respectively. The measured carrier to third-order intermodulation distortion is better than -15 dBc when tested with a 20 MHz spacing two-tone signal.
本文介绍了一种采用扩展B级到J级连续模式的多倍频功率放大器的设计。在多倍频响中，低八度的高谐波频率与高八度的基频之间存在重叠。因此，基频和二次谐波阻抗重叠的PA模式适合设计多倍频的PA。扩展的B类到J类连续模式由基频和二次谐波阻抗之间的重叠组成。然而，多八度扩音的设计并不简单。每个倍频的阻抗选择对于设计高效的多倍频放大器至关重要。因此，本文提出了一种在每个八度内选择适当载荷的方法来设计扩展的B类到J类连续模态PA。本文还提出了晶体管可靠工作的有效设计变量范围。概念验证PA采用10 W Wolfspeed GaN HEMT CGH40010F设计。设计的PA工作在0.75到2.75 GHz之间。相应的分数带宽为114.2%。实测漏极效率为60 ~ 73.6%，功率增加效率为53 ~ 67.8%，输出功率为39.3 ~ 42.3 dBm。在间隔为20 MHz的双音信号下，测量到的载波到三阶互调失真优于-15 dBc。
{"title":"Methodology to Design Multi-Octave Power Amplifier Using Extended Class B to Class J Continuous Mode","authors":"Y. M. A. Latha, K. Rawat","doi":"10.1109/IMaRC49196.2021.9714641","DOIUrl":"https://doi.org/10.1109/IMaRC49196.2021.9714641","url":null,"abstract":"This paper presents the design of a multi-octave power amplifier (PA) using extended class B to class J continuous mode. In a multi-octave PA, an overlapping exists between the higher harmonic frequencies of the lower octave and the fundamental frequency of the higher octave. Therefore, a PA mode with overlapping between fundamental and second harmonic impedances is suitable to design a multioctave PA. An extended class B to class J continuous mode consists of overlapping between fundamental and second harmonic impedances. However, the design of a multi-octave PA is not straightforward. The impedance selected in each octave is important to design a highly-efficiency multi-octave PA. Therefore, this paper presents a methodology to choose the appropriate load in each octave to design extended class B to class J continuous mode PA. This paper also presents a valid range of design variables for the transistor’s reliable operation. The proof of concept PA has been designed using 10 W Wolfspeed GaN HEMT CGH40010F. The designed PA operates from 0.75 to 2.75 GHz. The corresponding fractional bandwidth is 114.2%. The measured drain efficiency, power added efficiency, and output power are 60-73.6%, 53-67.8%, and 39.3-42.3 dBm, respectively. The measured carrier to third-order intermodulation distortion is better than -15 dBc when tested with a 20 MHz spacing two-tone signal.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126629750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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