Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714706
R. Chandan, A. Singh, S. Pal
In millimeter-wave systems, a waveguide to stripline (SL) transition is a key passive component that connects RFICs and other components. This manuscript presents a novel low-cost, mm-Wave waveguide-to-strip line transition using a circular resonating element. Owing to the compactness of structure, it can be easily deployed in 5G applications. The proposed structure is simple, robust, and easy to fabricate with good performance. The transition achieves an impedance bandwidth of 10.4 G from 27.45 GHz to 30.47 GHz.
{"title":"A Low Cost, Mm wave Waveguide-To-Strip line Transition For 5G Applications","authors":"R. Chandan, A. Singh, S. Pal","doi":"10.1109/imarc49196.2021.9714706","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714706","url":null,"abstract":"In millimeter-wave systems, a waveguide to stripline (SL) transition is a key passive component that connects RFICs and other components. This manuscript presents a novel low-cost, mm-Wave waveguide-to-strip line transition using a circular resonating element. Owing to the compactness of structure, it can be easily deployed in 5G applications. The proposed structure is simple, robust, and easy to fabricate with good performance. The transition achieves an impedance bandwidth of 10.4 G from 27.45 GHz to 30.47 GHz.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131650367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714638
Prabhanshu Chandra, Ritij Saini, Jaya Jha, Y. Yadav, S. Mukherjee, R. Gandhi, R. Laha, N. Pedapati, Dasari Balasekhar, Arijit Das, D. Saha, S. Ganguly
High frequency power applications such as radar, terrestrial and space communications, and signal jamming are increasingly adopting GaN devices. RF GaN market growth is driven significantly by 5G today. This paper describes the modelling approaches used for GaN based devices and associated RF passives for an MMIC technology which can be used by circuit designers to quickly model newly fabricated devices. It presents a look-up table based approach for modelling the GaN device and a semi-empirical approach to model the RF passives. A class-A broadband power amplifier has also been presented to verify and show the utility of the model.
{"title":"Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology","authors":"Prabhanshu Chandra, Ritij Saini, Jaya Jha, Y. Yadav, S. Mukherjee, R. Gandhi, R. Laha, N. Pedapati, Dasari Balasekhar, Arijit Das, D. Saha, S. Ganguly","doi":"10.1109/imarc49196.2021.9714638","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714638","url":null,"abstract":"High frequency power applications such as radar, terrestrial and space communications, and signal jamming are increasingly adopting GaN devices. RF GaN market growth is driven significantly by 5G today. This paper describes the modelling approaches used for GaN based devices and associated RF passives for an MMIC technology which can be used by circuit designers to quickly model newly fabricated devices. It presents a look-up table based approach for modelling the GaN device and a semi-empirical approach to model the RF passives. A class-A broadband power amplifier has also been presented to verify and show the utility of the model.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115591420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714582
Aditya N. Jogalekar, Oscar F. Medina, A. Blanchard, R. Henderson, M. Iyer, Tony Tang, R. Murugan, Hassan Ali
Antenna-in-package integration is one of the vital research elements enabling the realization of future mm-wave front-end modules. This paper discusses the design, modeling and simulation of a slot bow-tie antenna integrated in an innovative flip-chip enhanced QFN package for WR8 (90GHz-140GHz) and WR5 (140GHz-220GHz) frequency application bands. Additionally, this work addresses the designs, models, and simulated data of chip-to-package transitions, transmission line feeds for the antenna. The integrated antennas have a -10dB bandwidth of 46GHz and 80GHz and a peak gain of approximately 7.1dBi and 8.45dBi in WR8 and WR5 bands. Finally, a brief description of the test vehicle for measurement is also presented.
{"title":"Slot Bow-Tie Antenna Integration in an Enhanced Flip-Chip QFN Package for WR8 and WR5 Band Applications","authors":"Aditya N. Jogalekar, Oscar F. Medina, A. Blanchard, R. Henderson, M. Iyer, Tony Tang, R. Murugan, Hassan Ali","doi":"10.1109/imarc49196.2021.9714582","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714582","url":null,"abstract":"Antenna-in-package integration is one of the vital research elements enabling the realization of future mm-wave front-end modules. This paper discusses the design, modeling and simulation of a slot bow-tie antenna integrated in an innovative flip-chip enhanced QFN package for WR8 (90GHz-140GHz) and WR5 (140GHz-220GHz) frequency application bands. Additionally, this work addresses the designs, models, and simulated data of chip-to-package transitions, transmission line feeds for the antenna. The integrated antennas have a -10dB bandwidth of 46GHz and 80GHz and a peak gain of approximately 7.1dBi and 8.45dBi in WR8 and WR5 bands. Finally, a brief description of the test vehicle for measurement is also presented.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121331535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714523
Biswajit Pal, M. Mandal, S. Dwari
This paper presents a compact narrowband bandstop filter (BSF) with wide upper passband to reject any unwanted signal in an ultra-wideband system. The proposed structure consists of sections of transmission lines and a lumped capacitor. A lossless transmission line model is used to obtain the design equations. Then, full-wave simulation is used to obtain the filter layout in microstrip technology. Analysis shows that the second undesired stopband is far away from the first stopband frequency. If the microstrip lines and capacitor are chosen properly, the second stopband is at least forty times the first stopband frequency. A prototype BSF is fabricated with the stopband at 1.04 GHz. The upper passband of the filter extends up to 12.11 GHz. At the same time, significant size reduction is obtained. Occupied rectangular area is $0.0009 lambda^{2} gleft(lambda_{g}=lambda_{0} / sqrt{varepsilon_{r}}right)$ at 1.04 GHz.
{"title":"Compact Narrowband Bandstop Filter with Wide Upper Passband","authors":"Biswajit Pal, M. Mandal, S. Dwari","doi":"10.1109/imarc49196.2021.9714523","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714523","url":null,"abstract":"This paper presents a compact narrowband bandstop filter (BSF) with wide upper passband to reject any unwanted signal in an ultra-wideband system. The proposed structure consists of sections of transmission lines and a lumped capacitor. A lossless transmission line model is used to obtain the design equations. Then, full-wave simulation is used to obtain the filter layout in microstrip technology. Analysis shows that the second undesired stopband is far away from the first stopband frequency. If the microstrip lines and capacitor are chosen properly, the second stopband is at least forty times the first stopband frequency. A prototype BSF is fabricated with the stopband at 1.04 GHz. The upper passband of the filter extends up to 12.11 GHz. At the same time, significant size reduction is obtained. Occupied rectangular area is $0.0009 lambda^{2} gleft(lambda_{g}=lambda_{0} / sqrt{varepsilon_{r}}right)$ at 1.04 GHz.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116101927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714596
J. Bhattacharya, S. Maity
This manuscript proposes a wideband thin microwave absorber with 90% absorptivity. The unit cell of the proposed absorber contains two L shape patches with an inner ring conductor on the top of the FR4 substrate and copper laminates on the bottom surface. The absorber thinness is only 2 mm. This absorber has a wideband absorptivity response from 7.31 GHz to 10.7GHz without using any lumped circuit components. The maximum absorptivities of 99.71% and 99.9% are detected at 7.68 GHz and 10.01 GHz respectively. Several designed parameters are studied. The absorption characteristic of the proposed design absorber is observed by varying oblique incidence for TE and TM polarization. It is found that wideband absorption characteristics maintain up to 300 incidence angle for both TE and TM mode. In comparison to currently existing microwave absorbers, the proposed construction is extremely thin.
{"title":"Design of a Wide Band Thin Microwave Absorber","authors":"J. Bhattacharya, S. Maity","doi":"10.1109/imarc49196.2021.9714596","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714596","url":null,"abstract":"This manuscript proposes a wideband thin microwave absorber with 90% absorptivity. The unit cell of the proposed absorber contains two L shape patches with an inner ring conductor on the top of the FR4 substrate and copper laminates on the bottom surface. The absorber thinness is only 2 mm. This absorber has a wideband absorptivity response from 7.31 GHz to 10.7GHz without using any lumped circuit components. The maximum absorptivities of 99.71% and 99.9% are detected at 7.68 GHz and 10.01 GHz respectively. Several designed parameters are studied. The absorption characteristic of the proposed design absorber is observed by varying oblique incidence for TE and TM polarization. It is found that wideband absorption characteristics maintain up to 300 incidence angle for both TE and TM mode. In comparison to currently existing microwave absorbers, the proposed construction is extremely thin.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123621703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714577
Z. Akhter, A. Shamim, A. Khusro, A. Jha
This paper presents a unique design of a cylindrical cavity to identify the dielectric materials with high resolution using the supervised machine learning algorithm. The mountable design of an aluminum-based cylindrical cavity records a quality factor of more than 9000 and provides an easy assembly of samples to be tested. The linear region of the cavity precisely provides the identification of dielectric samples in the range of 1 to 20 within $sim$ 99 % of accuracy using the standard cavity formulation. On the other hand, the proposed machine learning approach works effectively in the non-linear region of the cavity and predicts the dielectric properties accurately in the wide range dielectric constant starting from 20-45 with a typical error of 0.35 %. The non-linearity of the cavity output is modeled using the cascade feedforward architecture of Artificial Neural Network (ANN) for multiinput variables extracted from the simulations. The model is trained using a well-known Bayesian regularization algorithm with an adequate number of samples and subsequently tested over a large sample of novel test input. The mean square error of test samples in the range of 10-4 and correlation coefficient (R) near 1 demonstrates the effectiveness of the approach in dielectric testing using the proposed cavity.
{"title":"Tackling Non-linearity in Cavity Perturbation using Machine Learning Approach","authors":"Z. Akhter, A. Shamim, A. Khusro, A. Jha","doi":"10.1109/imarc49196.2021.9714577","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714577","url":null,"abstract":"This paper presents a unique design of a cylindrical cavity to identify the dielectric materials with high resolution using the supervised machine learning algorithm. The mountable design of an aluminum-based cylindrical cavity records a quality factor of more than 9000 and provides an easy assembly of samples to be tested. The linear region of the cavity precisely provides the identification of dielectric samples in the range of 1 to 20 within $sim$ 99 % of accuracy using the standard cavity formulation. On the other hand, the proposed machine learning approach works effectively in the non-linear region of the cavity and predicts the dielectric properties accurately in the wide range dielectric constant starting from 20-45 with a typical error of 0.35 %. The non-linearity of the cavity output is modeled using the cascade feedforward architecture of Artificial Neural Network (ANN) for multiinput variables extracted from the simulations. The model is trained using a well-known Bayesian regularization algorithm with an adequate number of samples and subsequently tested over a large sample of novel test input. The mean square error of test samples in the range of 10-4 and correlation coefficient (R) near 1 demonstrates the effectiveness of the approach in dielectric testing using the proposed cavity.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123470389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714533
Lokendra Singh, N. Agrawal, C. Saha
This paper presents the utilization of metalinsulator- metal (MIM) plasmonic waveguide based Mach- Zehnder interferometer (MZI) for the artificial enzymatic detection of glucose concentration in blood and urine. The output of MZI model is attained by utilizing the concept of constructive interference at the output port. The outer side of sensing arm of MZI is facilitated with 10 nm thick layer of gold nanoparticles (AuNPs) to improve the sensitivity. Further, the specificity of sensing arm towards glucose molecules is enhanced by coating a layer of glucose oxidase (GOx). The sensing analysis of sensor model is done by testing it in the presence of glucose RI ranging from 1.335 – 1.339 (in blood) and 1.335 – 1.341 (in urine). The results states that the proposed sensor structure is capable to sense the presence of glucose concentration with autocorrelation coefficient and sensitivity of 99.7 % and 989.6 nm/RIU respectively. The complete analysis of proposed sensor model is carried out in the wavelength range from 1490 – 1610 nm under perfect matched layers (PML) as boundary conditions by using finite difference time domain (FDTD) method.
{"title":"Investigation of Glucose Sensor by using Plasmonic MIM Waveguide Based M","authors":"Lokendra Singh, N. Agrawal, C. Saha","doi":"10.1109/imarc49196.2021.9714533","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714533","url":null,"abstract":"This paper presents the utilization of metalinsulator- metal (MIM) plasmonic waveguide based Mach- Zehnder interferometer (MZI) for the artificial enzymatic detection of glucose concentration in blood and urine. The output of MZI model is attained by utilizing the concept of constructive interference at the output port. The outer side of sensing arm of MZI is facilitated with 10 nm thick layer of gold nanoparticles (AuNPs) to improve the sensitivity. Further, the specificity of sensing arm towards glucose molecules is enhanced by coating a layer of glucose oxidase (GOx). The sensing analysis of sensor model is done by testing it in the presence of glucose RI ranging from 1.335 – 1.339 (in blood) and 1.335 – 1.341 (in urine). The results states that the proposed sensor structure is capable to sense the presence of glucose concentration with autocorrelation coefficient and sensitivity of 99.7 % and 989.6 nm/RIU respectively. The complete analysis of proposed sensor model is carried out in the wavelength range from 1490 – 1610 nm under perfect matched layers (PML) as boundary conditions by using finite difference time domain (FDTD) method.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114281743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714663
S. Sushanth Kumar, R. Jaiswal, Kahani Kumari, K. V. Srivastava
In this paper, three reconfigurable narrow-band communicating antennas are integrated with ultra wide-band sensing antenna with good isolation and a wide tuning range is presented for cognitive radio (CR) applications. A patch antenna and two circular slot antennas are used as a narrow-band communicating antenna, and by using varactor diodes, frequency reconfigurability is achieved. A narrow-band patch antenna and two circular slot antennas are used to tune the frequency range 3.1 GHz - 8.2 GHz. The proposed antenna is fabricated, and antenna parameters are measured. The measured parameters are well-matched with simulated results and the measured isolation between the ports is better than 20 dB.
{"title":"Four Port Frequency Reconfigurable Antenna for Cognitive Radio Applications","authors":"S. Sushanth Kumar, R. Jaiswal, Kahani Kumari, K. V. Srivastava","doi":"10.1109/imarc49196.2021.9714663","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714663","url":null,"abstract":"In this paper, three reconfigurable narrow-band communicating antennas are integrated with ultra wide-band sensing antenna with good isolation and a wide tuning range is presented for cognitive radio (CR) applications. A patch antenna and two circular slot antennas are used as a narrow-band communicating antenna, and by using varactor diodes, frequency reconfigurability is achieved. A narrow-band patch antenna and two circular slot antennas are used to tune the frequency range 3.1 GHz - 8.2 GHz. The proposed antenna is fabricated, and antenna parameters are measured. The measured parameters are well-matched with simulated results and the measured isolation between the ports is better than 20 dB.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124402852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714702
R. Torres, F. Pereira, R. Correia, N. Carvalho
This work presents the development of an all digital backscatter system powered by an energy harvester circuit. The system is composed by a solar panel as energy source and a microcontroller unit (MCU) that processes the data coming from any sensor while changing the state of a digital IO pin to perform backscatter communication. The system achieved a bit rate of 5 kb/s sending information provided by a temperature sensor.
{"title":"An All-Digital Ambient Backscatter solution powered by Energy Harvesting","authors":"R. Torres, F. Pereira, R. Correia, N. Carvalho","doi":"10.1109/imarc49196.2021.9714702","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714702","url":null,"abstract":"This work presents the development of an all digital backscatter system powered by an energy harvester circuit. The system is composed by a solar panel as energy source and a microcontroller unit (MCU) that processes the data coming from any sensor while changing the state of a digital IO pin to perform backscatter communication. The system achieved a bit rate of 5 kb/s sending information provided by a temperature sensor.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131050803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-17DOI: 10.1109/imarc49196.2021.9714627
Ravi Kumar, Archana Rajput, K. Saurav, S. Koul
Abstract-A polarization insensitive triple band-pass frequency selective surface (FSS) is proposed. The three passband of the FSS exhibits bandwidth of 35.37%, 11.86 %, 19.28 % centered at 2.68 GHz, 6.88 GHz and 10.51 GHz, respectively. The structure is designed on one side of a single-layer FR4 substrate. The insertion loss in the three bands is better than -2 dB up to an oblique incidence angle of 60 °, confirming the angular stability of the proposed FSS. The measurement carried out on the 27 x 27 array of fabricated prototype of the bandpass FSS validates the result obtained in simulation.
{"title":"A Triple Band-Pass Polarization Insensitive and Angular Stable Frequency Selective Surface","authors":"Ravi Kumar, Archana Rajput, K. Saurav, S. Koul","doi":"10.1109/imarc49196.2021.9714627","DOIUrl":"https://doi.org/10.1109/imarc49196.2021.9714627","url":null,"abstract":"Abstract-A polarization insensitive triple band-pass frequency selective surface (FSS) is proposed. The three passband of the FSS exhibits bandwidth of 35.37%, 11.86 %, 19.28 % centered at 2.68 GHz, 6.88 GHz and 10.51 GHz, respectively. The structure is designed on one side of a single-layer FR4 substrate. The insertion loss in the three bands is better than -2 dB up to an oblique incidence angle of 60 °, confirming the angular stability of the proposed FSS. The measurement carried out on the 27 x 27 array of fabricated prototype of the bandpass FSS validates the result obtained in simulation.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114252066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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