Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693914
A. Pramanick, J. Nino, Jacob L. Jones
In order to understand the structural changes in piezoelectric materials, under dynamic electric fields, time-resolved diffraction experiments with stroboscopic data collection techniques are becoming more popular. Uses of neutron and synchrotron X-ray facilities for such experiments have been recently reported. However, implementation of stroboscopic techniques on laboratory X-ray diffractometers is necessary to develop a more comprehensive understanding of time-resolved structural changes in these materials. Here the authors report the application of a stroboscopic data collection technique on a laboratory X-ray diffractometer for in situ characterization of non-180° domain switching in La-doped Pb(Zr0.52Ti0.48)O3 ceramics under dynamic electric fields. Further, the variation of macroscopic material response under dynamic fields of different amplitudes is compared with the degree of non-180° domain switching observed through time-resolved X-ray diffraction (XRD).
{"title":"Time-resolved measurement of structural changes in lead zirconate titanate ceramics under cyclic electric fields","authors":"A. Pramanick, J. Nino, Jacob L. Jones","doi":"10.1109/ISAF.2008.4693914","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693914","url":null,"abstract":"In order to understand the structural changes in piezoelectric materials, under dynamic electric fields, time-resolved diffraction experiments with stroboscopic data collection techniques are becoming more popular. Uses of neutron and synchrotron X-ray facilities for such experiments have been recently reported. However, implementation of stroboscopic techniques on laboratory X-ray diffractometers is necessary to develop a more comprehensive understanding of time-resolved structural changes in these materials. Here the authors report the application of a stroboscopic data collection technique on a laboratory X-ray diffractometer for in situ characterization of non-180° domain switching in La-doped Pb(Zr0.52Ti0.48)O3 ceramics under dynamic electric fields. Further, the variation of macroscopic material response under dynamic fields of different amplitudes is compared with the degree of non-180° domain switching observed through time-resolved X-ray diffraction (XRD).","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131759579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693777
N. M. Murari, A. Kumar, R. Thomas, R. Katiyar
Multi layered metal-insulator-metal (MIM) structures with BiFeO3 (BFO) and Ba0.25Sr0.75TiO3 (BST) thin films were fabricated by chemical solution deposition. Crystalline structure of BFO was recognized as rhombohedral and was not influenced by the BST intermediate layer. Compared to the homogenous BFO, in the heterostructures, coercivity increased and saturation magnetization reduced. BST intermediate layer between the substrate and BFO layer resulted in the leakage current reduction by 3 orders of magnitude. The frequency and temperature dependent dielectric properties showed space charge accumulation between the layer of BST and BFO, and hence Maxwell-Wagner type dispersion.
{"title":"Fabrication of BiFeO3 capacitor structures with reduced leakage current","authors":"N. M. Murari, A. Kumar, R. Thomas, R. Katiyar","doi":"10.1109/ISAF.2008.4693777","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693777","url":null,"abstract":"Multi layered metal-insulator-metal (MIM) structures with BiFeO3 (BFO) and Ba0.25Sr0.75TiO3 (BST) thin films were fabricated by chemical solution deposition. Crystalline structure of BFO was recognized as rhombohedral and was not influenced by the BST intermediate layer. Compared to the homogenous BFO, in the heterostructures, coercivity increased and saturation magnetization reduced. BST intermediate layer between the substrate and BFO layer resulted in the leakage current reduction by 3 orders of magnitude. The frequency and temperature dependent dielectric properties showed space charge accumulation between the layer of BST and BFO, and hence Maxwell-Wagner type dispersion.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123281437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693844
Jiyoon Kim, S. Buhlmann, Moonkyu Park, Yunseok Kim, Yong Kwan Kim
In silicon integrated circuit technology, ferroelectric thin films have been importantly studied since they are the most promising materials for future non-volatile memory devices due to their fast switching speed and long-term retention time. PbTiO3 (PTO) is the one of the most suitable material for non-volatile memory devices, because it has the highest spontaneous polarization (PS) value. The subject of size effect on ferroelecticity has been of highest interest for many years to overcome the limit of memory density. As the ferroelectric film thickness decrease, it is possible to make small domain size of penetrating the film thickness direction. Another issue of ferroelectric thin film is reducing the preparation temperature, because the high temperature during the fabrication might degrade the bottom electrode, and leads to interface reaction between the ferroelectric film and Si substrate. To make thin and smooth PTO films, TiO2 was deposited on the Pt bottom electrode, and PbO gas phase reaction was carried out by static and rotation mode at a temperature as low as 450�??. TiO2 seed layer increase the number of active sites for PTO nucleation and, hence, allows crystallization of perovskite phase. To prepare PTO films below TC (493�??), PbO deposition power and target to substrate distance were controlled. As the temperature decreases, PbO layer was remained on the PTO surface, and it degraded the ferroelectric property of PTO films. However, it is possible to eliminate PbO layer on PTO films by reducing the PbO deposition power and increasing the target to sample distance until 100 mm. Zr buffer layer was inserted between PTO film and Pt bottom electrode to enhance the leakage property, and layer-by-layer preparation method was adopted to exclude the un-reacted TiO2. These methods enhance the switching property of PTO films. In summary, thin and smooth PTO ultra-thin films successfully deposited using the gas phase reaction sputtering below TC, and this method suggest us the possibility for high-density memory device.
{"title":"Low temperature preparation of PbTiO3 ultrathin films deposited by PbO gas phase reaction sputtering","authors":"Jiyoon Kim, S. Buhlmann, Moonkyu Park, Yunseok Kim, Yong Kwan Kim","doi":"10.1109/ISAF.2008.4693844","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693844","url":null,"abstract":"In silicon integrated circuit technology, ferroelectric thin films have been importantly studied since they are the most promising materials for future non-volatile memory devices due to their fast switching speed and long-term retention time. PbTiO3 (PTO) is the one of the most suitable material for non-volatile memory devices, because it has the highest spontaneous polarization (PS) value. The subject of size effect on ferroelecticity has been of highest interest for many years to overcome the limit of memory density. As the ferroelectric film thickness decrease, it is possible to make small domain size of penetrating the film thickness direction. Another issue of ferroelectric thin film is reducing the preparation temperature, because the high temperature during the fabrication might degrade the bottom electrode, and leads to interface reaction between the ferroelectric film and Si substrate. To make thin and smooth PTO films, TiO2 was deposited on the Pt bottom electrode, and PbO gas phase reaction was carried out by static and rotation mode at a temperature as low as 450�??. TiO2 seed layer increase the number of active sites for PTO nucleation and, hence, allows crystallization of perovskite phase. To prepare PTO films below TC (493�??), PbO deposition power and target to substrate distance were controlled. As the temperature decreases, PbO layer was remained on the PTO surface, and it degraded the ferroelectric property of PTO films. However, it is possible to eliminate PbO layer on PTO films by reducing the PbO deposition power and increasing the target to sample distance until 100 mm. Zr buffer layer was inserted between PTO film and Pt bottom electrode to enhance the leakage property, and layer-by-layer preparation method was adopted to exclude the un-reacted TiO2. These methods enhance the switching property of PTO films. In summary, thin and smooth PTO ultra-thin films successfully deposited using the gas phase reaction sputtering below TC, and this method suggest us the possibility for high-density memory device.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116838061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693850
A. Hunt, Zhiyong Zhao, Kwang Choi, D. Rajamani
This paper presents the combustion chemical vapor deposition (CCVD) growth and characterization of epitaxial BST films on sapphire. These thin films were used to fabricate phase shifters and tunable filters from 1GHz to 40GHz using planar gap capacitors. A 2:1 tunability was achieved for BST thin films under a DC bias of as low as 10 V and IMD as high as 50dBM can be achieved. Composition has a significant effect on loss and tunability with electrodes and bias structures also participating in performance. Coplanar waveguide (CPW) structures are fabricated onto BST are used to minimize electrode interface and better determine BST properties over frequency. S-parameters of the CPW were tested using a vector network analyzer, with dielectric constant and loss tangent being derived by comparing the measured data with electromagnetic (EM) simulation results. Optimization of the RF circuits, BST and electrodes have resulted in phase shifters with 60 to over 80 degrees/dB, tunable filters with 6 dB to less than 2 dB insertion loss, and good temperature stability.
{"title":"CCVD thin film ferroelectric epitaxy and electrode/biasing structures performance effects on phase shifters and filters","authors":"A. Hunt, Zhiyong Zhao, Kwang Choi, D. Rajamani","doi":"10.1109/ISAF.2008.4693850","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693850","url":null,"abstract":"This paper presents the combustion chemical vapor deposition (CCVD) growth and characterization of epitaxial BST films on sapphire. These thin films were used to fabricate phase shifters and tunable filters from 1GHz to 40GHz using planar gap capacitors. A 2:1 tunability was achieved for BST thin films under a DC bias of as low as 10 V and IMD as high as 50dBM can be achieved. Composition has a significant effect on loss and tunability with electrodes and bias structures also participating in performance. Coplanar waveguide (CPW) structures are fabricated onto BST are used to minimize electrode interface and better determine BST properties over frequency. S-parameters of the CPW were tested using a vector network analyzer, with dielectric constant and loss tangent being derived by comparing the measured data with electromagnetic (EM) simulation results. Optimization of the RF circuits, BST and electrodes have resulted in phase shifters with 60 to over 80 degrees/dB, tunable filters with 6 dB to less than 2 dB insertion loss, and good temperature stability.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"103 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120843398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693843
F. Mendoza, F. Fernandez
A set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measurements were performed on silicon wafer and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by pulsed laser deposition on sapphire substrate, and lower for films grown on MgO on glass substrates. For the sample grown on sapphire other transport properties for, obtained through Hall effect measurements, were obtained.
{"title":"Electrical properties of VO2 thin films grown by PLD","authors":"F. Mendoza, F. Fernandez","doi":"10.1109/ISAF.2008.4693843","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693843","url":null,"abstract":"A set of electronic instrumentation was configured to perform measurements of resistivity and Hall coefficient based on the four-point van der Pauw technique. Measurements were performed on silicon wafer and vanadium dioxide thin films. The abrupt change in resistivity at the critical semiconductor to metal transition temperature, by up to five orders of magnitude, was verified for VO2 thin films grown by pulsed laser deposition on sapphire substrate, and lower for films grown on MgO on glass substrates. For the sample grown on sapphire other transport properties for, obtained through Hall effect measurements, were obtained.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"292 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117339565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693870
E. Smirnova, A. Sotnikov, V. Lemanov, M. Weihnacht
The study is devoted to the compositional evolution and interrelation of phases in SrTiO3 - PMN solid solution. Experimental evidences of an antiferrodistortive phase, a relaxor state and their coexistence are obtained.
{"title":"Dielectric and acoustic properties of SrTiO3 - PMN solid solutions","authors":"E. Smirnova, A. Sotnikov, V. Lemanov, M. Weihnacht","doi":"10.1109/ISAF.2008.4693870","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693870","url":null,"abstract":"The study is devoted to the compositional evolution and interrelation of phases in SrTiO3 - PMN solid solution. Experimental evidences of an antiferrodistortive phase, a relaxor state and their coexistence are obtained.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124050750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693795
R. Singhal, M. Tomar, J. G. Burgos, R. Katiyar
We have synthesized Mg doped lithium manganate spinel cathode material via sol-gel method (LiMn1.8 Mg0.2O4 ) for application in Li ion rechargeable batteries. The cathode material was annealed at different temperature from 500¿900°C. C. It was found that the best crystallinity of the powder was obtained at 800°C. The lattice parameters for the material annealed at 500, 600, 700, 800, and 900°C was found 8.1320 Å, 8.1423 Å, 8.1631 Å, 8.1630 Å, 8.1757 Å, respectively. The cyclic voltammetric studies reveal intercalation-deintercalation of Li ion from the cathode material. The initial discharge capacity of LiMn1.8 Mg0.2O4 cathode material was found to be about 120 mAh/g. The rate cycleability studies show a very stable nature of LiMn1.8 Mg0.2O4 cathode at higher discharge currents (0.5 and 1 mA/cm2).
{"title":"LiMn1.8 Mg0.2O4 spinel cathode material for Li ion rechargeable batteries","authors":"R. Singhal, M. Tomar, J. G. Burgos, R. Katiyar","doi":"10.1109/ISAF.2008.4693795","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693795","url":null,"abstract":"We have synthesized Mg doped lithium manganate spinel cathode material via sol-gel method (LiMn1.8 Mg0.2O4 ) for application in Li ion rechargeable batteries. The cathode material was annealed at different temperature from 500¿900°C. C. It was found that the best crystallinity of the powder was obtained at 800°C. The lattice parameters for the material annealed at 500, 600, 700, 800, and 900°C was found 8.1320 Å, 8.1423 Å, 8.1631 Å, 8.1630 Å, 8.1757 Å, respectively. The cyclic voltammetric studies reveal intercalation-deintercalation of Li ion from the cathode material. The initial discharge capacity of LiMn1.8 Mg0.2O4 cathode material was found to be about 120 mAh/g. The rate cycleability studies show a very stable nature of LiMn1.8 Mg0.2O4 cathode at higher discharge currents (0.5 and 1 mA/cm2).","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122150359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693733
J. Borchardt, J. Alexander, K. Slenes
he U.S. Department of Defense vision for future weapons systems requires the development of electrical pulsers that exceed current state-of-the-art in energy storage density by an order of magnitude or more. Capacitors made from composite dielectric materials consisting of ceramic nanoparticles in a polymer matrix show promise for attaining these goals. TPL Inc. and Sandia National Laboratories have teamed to investigate the limits of these new materials for use in high energy density and high power capacitor designs. The major challenges encountered thus far are quality control in the processing of the materials as well as mechanical stresses resulting from the thermal curing process while forming prototype capacitor devices. This paper reports on the development progress of the composite dielectric for high energy density capacitors.
{"title":"Ceramic-polymer composite for high energy density capacitors","authors":"J. Borchardt, J. Alexander, K. Slenes","doi":"10.1109/ISAF.2008.4693733","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693733","url":null,"abstract":"he U.S. Department of Defense vision for future weapons systems requires the development of electrical pulsers that exceed current state-of-the-art in energy storage density by an order of magnitude or more. Capacitors made from composite dielectric materials consisting of ceramic nanoparticles in a polymer matrix show promise for attaining these goals. TPL Inc. and Sandia National Laboratories have teamed to investigate the limits of these new materials for use in high energy density and high power capacitor designs. The major challenges encountered thus far are quality control in the processing of the materials as well as mechanical stresses resulting from the thermal curing process while forming prototype capacitor devices. This paper reports on the development progress of the composite dielectric for high energy density capacitors.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123121069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693782
B. Piccione, J. Blendell, R. García
A thin film BiFeO3 - CoFe2O4 multiferroic nanocomposite has been investigated to determine the coupling between the two phases in a constrained film by combining piezoelectric force microscopy and an externally applied magnetic field. In addition, finite element modeling was carried out to fully explain the observed local piezoelectric response. The results of the experiments and modeling show that the mechanical contributions dominate the local response of the ferroelectric phase and that large regions of high response are due to the interactions of the microstructural features. Also, microstructures that would improve mulitferroic properties are suggested based on the modeled response of the nanocomposite.
{"title":"Response surface measurement for BiFeO3-CoFe2O4 multiferroic nanocomposite","authors":"B. Piccione, J. Blendell, R. García","doi":"10.1109/ISAF.2008.4693782","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693782","url":null,"abstract":"A thin film BiFeO3 - CoFe2O4 multiferroic nanocomposite has been investigated to determine the coupling between the two phases in a constrained film by combining piezoelectric force microscopy and an externally applied magnetic field. In addition, finite element modeling was carried out to fully explain the observed local piezoelectric response. The results of the experiments and modeling show that the mechanical contributions dominate the local response of the ferroelectric phase and that large regions of high response are due to the interactions of the microstructural features. Also, microstructures that would improve mulitferroic properties are suggested based on the modeled response of the nanocomposite.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115712352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693950
J. Bierschenk
Bismuth telluride thermoelectric (TE) technology is well established in many small scale cooling applications including picnic boxes, auto seats, telecommunications lasers, military smart munitions and satellite applications. Applications using thermoelectric generators (TEGs) operating in reverse, for generating power from small ambient temperature differences are much less mature and not as well understood. Traditional bulk thermoelectric devices and thin film thermoelectric devices are not well suited for these low ¿T, low heat flux applications due to a mismatch between the TEG thermal resistance and the thermal resistance of the small natural convection heat sinks inherent to these energy harvesting applications. This paper will highlight the TE design characteristics for low ¿T energy harvesting TEGs. Performance comparisons between the new bulk TEG devices, traditional thermoelectrics and new thin film thermoelectric approaches will be provided.
{"title":"Optimized thermoelectrics for energy harvesting applications","authors":"J. Bierschenk","doi":"10.1109/ISAF.2008.4693950","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693950","url":null,"abstract":"Bismuth telluride thermoelectric (TE) technology is well established in many small scale cooling applications including picnic boxes, auto seats, telecommunications lasers, military smart munitions and satellite applications. Applications using thermoelectric generators (TEGs) operating in reverse, for generating power from small ambient temperature differences are much less mature and not as well understood. Traditional bulk thermoelectric devices and thin film thermoelectric devices are not well suited for these low ¿T, low heat flux applications due to a mismatch between the TEG thermal resistance and the thermal resistance of the small natural convection heat sinks inherent to these energy harvesting applications. This paper will highlight the TE design characteristics for low ¿T energy harvesting TEGs. Performance comparisons between the new bulk TEG devices, traditional thermoelectrics and new thin film thermoelectric approaches will be provided.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122568712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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